CN112652722A - Self-powered dual-function photoelectric detector and preparation method thereof - Google Patents
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Abstract
The invention discloses a self-powered dual-function photoelectric detector and a preparation method thereof, wherein the self-powered dual-function photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film is covered at the upper end of the electrode layer. The preparation method of the self-powered bifunctional photoelectric detector comprises the following steps of preparing a sapphire substrate: sequentially cutting, cleaning and blow-drying the high-light-transmittance sapphire to obtain a sapphire substrate; preparing an electrode layer: arranging an electrode layer on the sapphire substrate through photoetching and evaporation treatment; preparing a perovskite precursor solution: preparing a perovskite precursor material into a perovskite precursor solution; preparing a photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish together, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
Description
Technical Field
The invention relates to the technical field of materials, photoelectric detectors and the like, in particular to a self-powered dual-function photoelectric detector and a preparation method thereof.
Background
Photodetectors have the ability to convert light into electrical signals and are widely used in image sensing, optical communication, and environmental monitoring. In recent years, perovskite materials have attracted more and more attention due to their simple and easy preparation method, among which, organic-inorganic hybrid perovskite MAPbbX3(MA＝CH3NH3 +，X＝Cl-，Br-，I-) The advantages of small exciton binding energy, high absorption coefficient, wide spectral range, large carrier mobility and the like become the best photoelectric detector material. In addition, MAPbX can be modified by adjusting the composition of halogen element in the compound3Continuously tuned from Ultraviolet (UV) to Near Infrared (NIR). Absorption edge continuity and tunability are the most important properties of tunable photodetectors. Photodetectors generally fall into two categories, wide-spectrum photodetectors and narrow-spectrum photodetectors, and one detector can only be adapted to one detection mode. Broad spectrum detection is used to detect broad spectrum light, such as visible light, ultraviolet light, and X-rays, while narrow spectrum detection is used to detect only a selective portion of a narrow range of light, such as red, green, blue, or infrared. In general, in order to realize narrow spectrum detection, a component of a filter is required to be added into the detector, but the filter is expensive and fragile, and is not suitable for extreme detection conditions. Also, detectors typically require the use of an external power source to operate, so from an application point of view we have sought to build self-powered perovskite photodetectors that do not require an additional power source. Photodetectors that operate without any power supply, i.e., self-powered photodetectors, have some particular advantages, such as saving energy, reducing the size of the device, and proper use in extreme conditions. Therefore, how to realize a self-powered tunable perovskite photodetector becomes the research focus of the technology. According to research, self-powered photodetectors are generally realized by using structures such as a p-n junction, a p-i-n junction, a Schottky junction, a heterojunction and the like, which can effectively separate photon-generated carriers, but the preparation process of the structures is complex. Most of themThe photoelectric detector works based on a metal-semiconductor-metal (MSM) structure, and the method has the advantages of controllability, stability, easiness in manufacturing and the like. However, conventional MSM photodetectors always require an external power source as a driving force to separate the photo-generated carriers and thus generate photocurrent because their two symmetrical schottky contact barriers are the same height. Previous studies have shown that MSM devices using different materials as electrodes (one being an ohmic contact and the other being a schottky contact) are considered to be planar structures that can operate without an external bias. However, the fabrication process of the MSM structure photodetector made of two different electrode materials is complicated and not the most advantageous electrode structure. Experiments have found that the size of the metal electrodes can strongly influence the distribution of the electric field in the schottky junction and that the preparation of metal electrodes of different sizes is simpler and easier than the preparation of metal electrodes of different materials. For the photoelectric detector, the existence of the built-in electric field can effectively prevent the recombination of photo-generated electron-hole pairs, effectively separate photo-generated carriers, further convert the acquired optical signals into electric signals and extract the electric signals, and the behavior of optical signal detection is realized. Therefore, it is desirable to implement self-powered perovskite MSM dual-function photodetectors by using asymmetric planar electrode pairs. With the above background of research, the present invention mainly solves the following problems: 1. detection modes applicable to both broad and narrow spectra on the same photodetector are achieved. 2. The problem that the detector can work even when the external voltage is not connected is solved.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a self-powered dual-function photoelectric detector and a preparation method thereof, which realize the detection mode applicable to wide spectrum and narrow spectrum on the same photoelectric detector and solve the problem that the detector can work without connecting external voltage.
The self-powered bifunctional photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, wherein the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film is covered at the upper end of the electrode layer.
The preparation method of the self-powered bifunctional photoelectric detector is used for preparing the self-powered bifunctional photoelectric detector and comprises the following steps of: sequentially cutting, cleaning and blow-drying the high-light-transmittance sapphire to obtain a sapphire substrate; preparing an electrode layer: arranging an electrode layer on the sapphire substrate through photoetching and evaporation treatment; preparing a perovskite precursor solution: preparing a perovskite precursor material into a perovskite precursor solution; preparing a photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish together, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
Further, the specific preparation method of the sapphire substrate comprises the following steps:
s1, cutting the high-light-transmission sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning for 15min in an ultrasonic bath;
and S3, drying the cleaned sapphire substrate by using high-purity nitrogen for later use.
Further, the electrode layer is an asymmetric electrode, and the specific preparation method of the asymmetric electrode comprises the following steps:
s4, spin-coating a layer of ultraviolet photoresist on the dried sapphire substrate, placing the sapphire substrate on a 100-degree hot plate for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist; the spin coating parameters of the ultraviolet photoresist comprise: 1. 500rpm, 5s, 2, 3000rpm, 30 s.
S5, transferring a photoetching plate pattern with 12 pairs of asymmetric finger inserting electrodes onto the sapphire substrate which is spin-coated with ultraviolet photoresist after exposure of ultraviolet light through photoetching, wherein the finger widths of the asymmetric finger inserting electrodes are respectively 10 microns and 5 microns, the track width is 10 microns, and the length is 500 microns;
s6, developing the exposed sapphire substrate in a developing solution for 6S by a wet stripping technology to obtain an electrode pattern, washing with deionized water to remove residual developing solution, and drying the deionized water on the surface by high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
s7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating and plating a 50nm Au electrode, and placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning to obtain the sapphire substrate with the electrode layer.
Furthermore, perovskite materials with different absorption band gaps, namely MAPbI, are synthesized by the method3、MAPbBr3、MAPbCl3Absorption edges of the three substances are respectively positioned at 810nm, 550nm and 410nm, so that the synthesis of the tunable light absorption material is realized, and the perovskite precursor solution comprises the following components: MAPbi3、MAPbBr3、MAPbCl3The specific synthesis method comprises the following steps:
optionally, the MAPbI3The specific preparation method comprises the following steps: weighing MAI and PbI with a molar ratio of 1:12The powders were mixed and dissolved in 5ml of gamma-butyrolactone solution and the perovskite precursor solution was prepared with a synthesis concentration of 0.5M.
Optionally, the MAPbBr is3The specific preparation method comprises the following steps: weighing MABr and PbBr with a molar ratio of 1:12The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution.
Optionally, the MAPbCl3The specific preparation method comprises the following steps: weighing MACl and PbCl with a molar ratio of 1:12The powder is dissolved in a mixed solution of dimethyl formamide and dimethyl sulfoxide with the volume ratio of 1:1 after being mixed, and the perovskite precursor solution is prepared and synthesized.
Further, the perovskite precursor solution is prepared by the specific method comprising the following steps:
s8, synthesis of the mixed solution was completed in a glove box and placed on a magnetic stirrer to stir at 800rpm at ambient temperature of 60 ℃ overnight until the solution was completely dissolved.
Further, the specific preparation method for preparing the photoelectric detector comprises the following steps:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish, mixing the solution with 5ml of o-dichlorobenzene, stirring the mixture for 30min at 400rpm in an environment with the temperature of 110 ℃ by magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing the sapphire substrate for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
The invention has the beneficial effects that:
the self-powered bifunctional photoelectric detector and the preparation method thereof have the advantages of simple and easy preparation method, no strict requirements on the preparation environment and stable device. The invention integrates self-power supply and dual-function detection, and prepares the tunable perovskite photoelectric detector. The photoelectric detector designed by the invention has fast response time and fast response to light, and can be used for detecting light signals with fast change.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of a device structure of a self-powered dual-function photodetector according to the present invention;
FIG. 2 is a scanning electron microscope image of the surface of a perovskite microcrystalline film of three perovskite materials in an embodiment of the invention, and an inset is a cross-sectional view of the material;
FIG. 3 is an X-ray diffraction (XRD) spectrum of three perovskite materials of the self-powered dual-function photoelectric detector in the embodiment of the present invention;
FIG. 4 is a graph showing absorption curves of three perovskite materials for a self-powered dual-function photodetector in accordance with an embodiment of the present invention;
FIG. 5 is a graph illustrating the spectral responsivity of three perovskite materials of the self-powered dual-function photodetector in accordance with an embodiment of the present invention;
FIG. 6 shows selection of MAPbI in an embodiment of the present invention3An input signal waveform for device optical communication testing of a material;
FIG. 7 is a waveform diagram of an output signal with a wavelength of 808nm of a test light source according to an embodiment of the present invention, wherein the upper diagram is a broad spectrum detection mode and the lower diagram is a narrow spectrum detection mode;
FIG. 8 is a waveform diagram of an output signal with a wavelength of 550nm of a test light source according to an embodiment of the present invention, wherein the upper diagram is a broad spectrum detection mode and the lower diagram is a narrow spectrum detection mode.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
Example 1
As shown in fig. 1, the self-powered dual-function photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, wherein the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film is covered at the upper end of the electrode layer.
The preparation method of the self-powered bifunctional photoelectric detector is used for preparing the self-powered bifunctional photoelectric detector and comprises the following steps of: sequentially cutting, cleaning and blow-drying the high-light-transmittance sapphire to obtain a sapphire substrate; preparing an electrode layer: arranging an electrode layer on the sapphire substrate through photoetching and evaporation treatment; preparing a perovskite precursor solution: preparing a perovskite precursor material into a perovskite precursor solution; preparing a photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish together, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
In this embodiment, a specific preparation method of the sapphire substrate includes:
s1, cutting the high-light-transmission sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning for 15min in an ultrasonic bath;
and S3, drying the cleaned sapphire substrate by using high-purity nitrogen for later use.
As shown in fig. 1, in this embodiment, the electrode layer is an asymmetric electrode, and a specific preparation method of the asymmetric electrode is as follows:
s4, spin-coating a layer of ultraviolet photoresist on the dried sapphire substrate, placing the sapphire substrate on a 100-degree hot plate for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist; the spin coating parameters of the ultraviolet photoresist comprise: 1. 500rpm, 5s, 2, 3000rpm, 30 s.
S5, transferring a photoetching plate pattern with 12 pairs of asymmetric finger inserting electrodes onto the sapphire substrate which is spin-coated with ultraviolet photoresist after exposure of ultraviolet light through photoetching, wherein the finger widths of the asymmetric finger inserting electrodes are respectively 10 microns and 5 microns, the track width is 10 microns, and the length is 500 microns;
s6, developing the exposed sapphire substrate in a developing solution for 6S by a wet stripping technology to obtain an electrode pattern, washing with deionized water to remove residual developing solution, and drying the deionized water on the surface by high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
s7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating and plating a 50nm Au electrode, and placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning to obtain the sapphire substrate with the electrode layer.
In the embodiment, perovskite materials with different absorption band gaps, namely MAPbI, are synthesized by the invention3、MAPbBr3、MAPbCl3Absorption edges of the three substances are respectively positioned at 810nm, 550nm and 410nm, so that the synthesis of the tunable light absorption material is realized, and the perovskite precursor solution comprises the following components: MAPbi3、MAPbBr3、MAPbCl3The specific synthesis method comprises the following steps:
in this embodiment, the MAPbI3The specific preparation methodThe method comprises the following steps: weighing MAI and PbI with a molar ratio of 1:12The powders were mixed and dissolved in 5ml of gamma-butyrolactone solution and the perovskite precursor solution was prepared with a synthesis concentration of 0.5M.
In this embodiment, the MAPbBr is3The specific preparation method comprises the following steps: weighing MABr and PbBr with a molar ratio of 1:12The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution.
In this embodiment, the MAPbCl3The specific preparation method comprises the following steps: weighing MACl and PbCl with a molar ratio of 1:12The powder is dissolved in a mixed solution of dimethyl formamide and dimethyl sulfoxide with the volume ratio of 1:1 after being mixed, and the perovskite precursor solution is prepared and synthesized.
In this embodiment, a specific preparation method of the perovskite precursor solution is as follows:
s8, synthesis of the mixed solution was completed in a glove box and placed on a magnetic stirrer to stir at 800rpm at ambient temperature of 60 ℃ overnight until the solution was completely dissolved.
In this embodiment, a specific preparation method of the photodetector includes:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish, mixing the solution with 5ml of o-dichlorobenzene, stirring the mixture for 30min at 400rpm in an environment with the temperature of 110 ℃ by magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing the sapphire substrate for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
Example 2
In order to further characterize the surface morphology and performance of the self-powered dual-function tunable detector (self-powered dual-function photoelectric detector) prepared by the invention, the photoelectric detector with the dual-function self-powered tunable plane asymmetric MSM structure is subjected to the following series of tests and analyses, and the specific contents are as follows:
as shown in fig. 2, the surface of the three materials is scanned by electron microscope, and the inset is the cross section of the material. From the pictures, it is clearly observed that the perovskite microcrystalline film is successfully synthesized by the experimental method of the present invention.
As shown in fig. 3, the X-ray diffraction patterns (XRD) of the three materials. XRD is the most intuitive means for the synthesis quality of the reaction material, and the diffraction peak reflected by the curve is highly matched with each crystal face, which shows that the perovskite material prepared by the invention has high synthesis quality.
As shown in fig. 4, the absorption curves of the three perovskite materials, and the preparation of the tunable light-absorbing perovskite material is one of the research objects of the present invention. Obvious differences of light absorption positions of the three perovskite materials can be visually observed from the absorption curves. Thereby providing a powerful basis for implementing the invention.
As shown in fig. 5, the spectral responsivity curves of the three perovskite detectors. The spectral response is an important parameter of the detector, which indicates the strength of the ability of the detector to detect light. It can be seen from the test curve that the detector prepared by the invention successfully realizes the detection of different optical wavelengths and the preparation of the tunable detector. In addition, the spectral response curves of the same material are greatly different, and the wavelength of the detection light is greatly different. A very distinct broad spectrum detection mode and narrow spectrum detection mode can be observed because the microcrystalline film produced has a certain thickness and the shorter the wavelength of light, the shallower the penetration depth in the film, the more difficult it is to collect the carrier signal generated, so narrow spectrum detection occurs when light is irradiated from above the device, and broad spectrum detection occurs when light is incident from below the device, on the contrary. The invention really realizes that the same detector has two different detection modes. It is worth noting that all spectral response tests were performed without any external power source, demonstrating the possibility of the present invention.
Example 3
In order to prove that the photoelectric detector designed by the invention has practical applicability, MAPbI is selected3The device was tested for optical communication. Five letters of 'HRBNU' are used as input signals of a test, and the letters need to be converted into binary codes before the test. Under the condition of no external bias voltage, when the voltage is reducedTesting by using light with wavelength of 808nm to find that the waveform curves of the input signal are consistent with those of the output signal under the conditions of the two detection modes; when the test was performed using light of 550nm wavelength, it was found that the output curve waveform was highly matched with the input waveform when the test was performed using the broad spectrum pattern, and the output curve was found to be free from fluctuation when the test was performed using the narrow spectrum pattern. This is because light having a wavelength of 550nm cannot be detected in the narrow spectrum detection mode. From another perspective, it was explained that the devices of the present experimental design have a dual function detection mode, with the effect shown in FIGS. 6-8 below. The detector designed by the invention can be used for practical application. Fig. 6 is a waveform diagram of an input signal, fig. 7 is a waveform diagram of an output signal with a wavelength of 808nm of a test light source according to an embodiment of the present invention, wherein the upper diagram is a wide spectrum detection mode, and the lower diagram is a narrow spectrum detection mode, fig. 8 is a waveform diagram of an output signal with a wavelength of 550nm of a test light source according to an embodiment of the present invention, wherein the upper diagram is a wide spectrum detection mode, and the lower diagram is a narrow spectrum detection mode.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (10)
1. Self-powered bifunctional photoelectric detector, its characterized in that: the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film covers the upper end of the electrode layer.
2. A method for manufacturing a self-powered dual-function photodetector, for manufacturing a self-powered dual-function photodetector according to claim 1, comprising the steps of:
preparing a sapphire substrate: sequentially cutting, cleaning and blow-drying the high-light-transmittance sapphire to obtain a sapphire substrate;
preparing an electrode layer: arranging an electrode layer on the sapphire substrate through photoetching and evaporation treatment;
preparing a perovskite precursor solution: preparing a perovskite precursor material into a perovskite precursor solution;
preparing a photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish together, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
3. A method for preparing a self-powered dual-function photoelectric detector as claimed in claim 2, wherein the sapphire substrate is prepared by the following steps:
s1, cutting the high-light-transmission sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning for 15min in an ultrasonic bath;
and S3, drying the cleaned sapphire substrate by using high-purity nitrogen for later use.
4. A preparation method of a self-powered dual-function photoelectric detector as claimed in any one of claims 2 or 3, wherein the electrode layer is an asymmetric electrode, and the specific preparation method of the asymmetric electrode is as follows:
s4, spin-coating a layer of ultraviolet photoresist on the dried sapphire substrate, placing the sapphire substrate on a 100-degree hot plate for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist;
s5, transferring a photoetching plate pattern with 12 pairs of asymmetric finger inserting electrodes onto the sapphire substrate which is spin-coated with ultraviolet photoresist after exposure of ultraviolet light through photoetching, wherein the finger widths of the asymmetric finger inserting electrodes are respectively 10 microns and 5 microns, the track width is 10 microns, and the length is 500 microns;
s6, developing the exposed sapphire substrate in a developing solution for 6S by a wet stripping technology to obtain an electrode pattern, washing with deionized water to remove residual developing solution, and drying the deionized water on the surface by high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
s7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating and plating a 50nm Au electrode, and placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning to obtain the sapphire substrate with the electrode layer.
5. A method of fabricating a self-powered bi-functional photodetector as defined in claim 2 wherein said perovskite precursor solution comprises: MAPbi3、MAPbBr3、MAPbCl3。
6. A method of fabricating a self-powered dual function photodetector as defined in claim 5 wherein said MAPbI3The specific preparation method comprises the following steps: weighing MAI and PbI with a molar ratio of 1:12The powders were mixed and dissolved in 5ml of gamma-butyrolactone solution and the perovskite precursor solution was prepared with a synthesis concentration of 0.5M.
7. A method for fabricating a self-powered dual-function photodetector as defined in claim 5 wherein said MAPBR3The specific preparation method comprises the following steps: weighing MABr and PbBr with a molar ratio of 1:12The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution.
8. A method of fabricating a self-powered bi-functional photodetector as defined in claim 5 wherein said MAPBCl is applied to a substrate3The specific preparation method comprises the following steps: weighing MACl and PbCl with a molar ratio of 1:12The powder is dissolved in a mixed solution of dimethyl formamide and dimethyl sulfoxide with the volume ratio of 1:1 after being mixed, and the perovskite precursor solution is prepared and synthesized.
9. A preparation method of a self-powered bifunctional photoelectric detector as claimed in any one of claims 6 to 8, wherein the perovskite precursor solution is prepared by a specific method comprising:
s8, synthesis of the mixed solution was completed in a glove box and placed on a magnetic stirrer to stir at 800rpm at ambient temperature of 60 ℃ overnight until the solution was completely dissolved.
10. A method for preparing a self-powered dual-function photoelectric detector as claimed in claim 2, wherein the method for preparing the photoelectric detector comprises:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallizing dish, mixing the solution with 5ml of o-dichlorobenzene, stirring the mixture for 30min at 400rpm in an environment with the temperature of 110 ℃ by magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing the sapphire substrate for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
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| CN114447153A (en) * | 2022-01-25 | 2022-05-06 | 哈尔滨师范大学 | CsPbBr3ZnO QDs-based MSM structure detector, preparation method and application |
| CN116744754A (en) * | 2023-06-16 | 2023-09-12 | 深圳大学 | Perovskite polymer fiber film photoelectric device and preparation method thereof |
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| CN114023885A (en) * | 2021-11-05 | 2022-02-08 | 中国科学院福建物质结构研究所 | Self-driven polarized light detector based on ferroelectric photovoltaic effect and preparation method thereof |
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| CN114447153B (en) * | 2022-01-25 | 2024-05-07 | 哈尔滨师范大学 | CsPbBr3ZnO QDs-based MSM structure detector, preparation method and application |
| CN116744754A (en) * | 2023-06-16 | 2023-09-12 | 深圳大学 | Perovskite polymer fiber film photoelectric device and preparation method thereof |
| CN117460269A (en) * | 2023-12-25 | 2024-01-26 | 苏州大学 | Bipolar photoelectric detector and optical encryption communication system and method |
| CN117460269B (en) * | 2023-12-25 | 2024-03-19 | 苏州大学 | Bipolar photoelectric detector and optical encryption communication system and method |
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