CN112635631A - 一种发光二极管 - Google Patents
一种发光二极管 Download PDFInfo
- Publication number
- CN112635631A CN112635631A CN202011627999.4A CN202011627999A CN112635631A CN 112635631 A CN112635631 A CN 112635631A CN 202011627999 A CN202011627999 A CN 202011627999A CN 112635631 A CN112635631 A CN 112635631A
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- China
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- layer
- outer electrode
- inner electrode
- emitting diode
- electrode regions
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000000926 separation method Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 21
- 238000009792 diffusion process Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 131
- 238000000034 method Methods 0.000 description 12
- 238000003466 welding Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002042 Silver nanowire Substances 0.000 description 3
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011627999.4A CN112635631B (zh) | 2020-12-31 | 2020-12-31 | 一种发光二极管 |
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CN202011627999.4A CN112635631B (zh) | 2020-12-31 | 2020-12-31 | 一种发光二极管 |
Publications (2)
Publication Number | Publication Date |
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CN112635631A true CN112635631A (zh) | 2021-04-09 |
CN112635631B CN112635631B (zh) | 2022-05-10 |
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CN202011627999.4A Active CN112635631B (zh) | 2020-12-31 | 2020-12-31 | 一种发光二极管 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112670384A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112670385A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130299853A1 (en) * | 2012-05-08 | 2013-11-14 | Chi Mei Lighting Thechnology Corp. | High voltage light emitting diode and fabricating method thereof |
CN103606613A (zh) * | 2013-11-12 | 2014-02-26 | 华灿光电(苏州)有限公司 | 具有对称电极的倒装发光二极管及其制备方法 |
US20170108173A1 (en) * | 2015-10-16 | 2017-04-20 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device including the same |
CN108649047A (zh) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | 倒装芯片型发光二极管芯片 |
CN208014727U (zh) * | 2018-03-23 | 2018-10-26 | 广东省半导体产业技术研究院 | 发光二极管 |
US20190334061A1 (en) * | 2018-04-27 | 2019-10-31 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
CN111446336A (zh) * | 2020-04-01 | 2020-07-24 | 厦门三安光电有限公司 | 发光二极管 |
US20200243721A1 (en) * | 2018-01-25 | 2020-07-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
CN111969086A (zh) * | 2019-05-20 | 2020-11-20 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
CN112670384A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112670385A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
-
2020
- 2020-12-31 CN CN202011627999.4A patent/CN112635631B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130299853A1 (en) * | 2012-05-08 | 2013-11-14 | Chi Mei Lighting Thechnology Corp. | High voltage light emitting diode and fabricating method thereof |
CN108649047A (zh) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | 倒装芯片型发光二极管芯片 |
CN103606613A (zh) * | 2013-11-12 | 2014-02-26 | 华灿光电(苏州)有限公司 | 具有对称电极的倒装发光二极管及其制备方法 |
US20170108173A1 (en) * | 2015-10-16 | 2017-04-20 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device including the same |
US20200243721A1 (en) * | 2018-01-25 | 2020-07-30 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
CN208014727U (zh) * | 2018-03-23 | 2018-10-26 | 广东省半导体产业技术研究院 | 发光二极管 |
US20190334061A1 (en) * | 2018-04-27 | 2019-10-31 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
CN111969086A (zh) * | 2019-05-20 | 2020-11-20 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
CN111446336A (zh) * | 2020-04-01 | 2020-07-24 | 厦门三安光电有限公司 | 发光二极管 |
CN112670384A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112670385A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112670384A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
CN112670385A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管 |
Also Published As
Publication number | Publication date |
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CN112635631B (zh) | 2022-05-10 |
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Effective date of registration: 20230404 Address after: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee after: Southern University of Science and Technology Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230625 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518000 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee before: Southern University of Science and Technology |
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