CN112629675A - Thermopile infrared sensor and method for manufacturing same - Google Patents
Thermopile infrared sensor and method for manufacturing same Download PDFInfo
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- CN112629675A CN112629675A CN202011583610.0A CN202011583610A CN112629675A CN 112629675 A CN112629675 A CN 112629675A CN 202011583610 A CN202011583610 A CN 202011583610A CN 112629675 A CN112629675 A CN 112629675A
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention relates to a thermopile infrared sensor and a manufacturing method thereof, wherein the thermopile infrared sensor comprises: the bearing substrate is provided with a film-shaped thermistor and comprises a first surface and a second surface which are opposite; the thermopile structure comprises a first substrate and a thermopile main body, wherein the first substrate is provided with a first cavity, the thermopile main body is arranged on the first substrate and at least comprises a group of thermocouple pairs, and the first substrate is arranged on the first surface of the bearing base plate. According to the invention, the thermistor is arranged on the bearing substrate, so that the thermopile structure and the thermistor can be simultaneously formed in the same packaging structure, integrated packaging is realized, the process steps are shortened, the size of the infrared thermopile sensor is reduced, and the reliability of the infrared thermopile sensor is improved.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to a thermopile infrared sensor and a manufacturing method thereof.
Background
With the development of the internet of things technology, the life quality of people is improved, and the application prospect of an infrared detector is more and more extensive, wherein a thermopile infrared sensor is one of infrared imaging devices which are researched and put into practical use at the earliest, and as a non-refrigeration infrared detector, the thermopile infrared sensor has wide application in the aspects of safety monitoring, medical treatment, life detection, consumer products and the like and is developed more rapidly due to the advantages of small size, light weight, no need of refrigeration, high sensitivity and the like.
The working principle of the thermopile is mainly based on the seebeck effect, namely two different materials or two objects which are the same in material and different in work function are connected in series, when infrared rays irradiate the center of the chip, the center of the thermopile is heated, so that the temperature of a hot junction is raised, and a cold junction is not changed along with the temperature rise of the center of the chip, so that the temperature difference delta T exists between the heated hot junction and the cold junction, an output voltage is formed, and then the output voltage is subjected to signal processing to measure the temperature of the objects.
Generally, a thermopile infrared sensor directly converts infrared radiation energy of a human body into a voltage signal which is continuously output through a thermopile chip, then forms a voltage division signal in a circuit through a thermistor chip (NTC), performs signal processing on the voltage signal and the voltage division signal, and calculates whether the temperature difference caused by infrared radiation exists between the thermopile chip and the thermistor chip according to the voltage signal and the voltage division signal, thereby judging whether the human body exists in the surrounding space, avoiding using a delay control chip with poor flexibility and estimating a delay parameter in advance, and improving the accuracy of human body induction and the convenience in use.
However, in the currently manufactured thermopile infrared sensor, the thermopile chip and the thermistor are formed separately and the sub-package bases are mounted separately, so that the process steps are long, the size is large, and the reliability is long due to the fact that the thermopile infrared sensor and the thermistor are electrically connected through external wires.
Disclosure of Invention
The invention aims to provide a thermopile infrared sensor and a manufacturing method thereof, which can integrate and package, reduce mentioning and improve reliability and measurement precision.
In order to achieve the above object, the present invention provides a thermopile infrared sensor including:
the bearing substrate is provided with a film-shaped thermistor and comprises a first surface and a second surface which are opposite;
the thermopile structure comprises a first substrate provided with a first cavity and a thermopile main body arranged on the first substrate, wherein the thermopile main body at least comprises a group of thermocouple pairs, and the first substrate is arranged on the first surface of the bearing substrate.
The invention also provides a manufacturing method of the thermopile infrared sensor, which comprises the following steps:
providing a carrier substrate, wherein the carrier substrate comprises a first surface and a second surface which are opposite;
forming a thermistor in the carrier substrate, the first surface of the carrier substrate or the second surface of the carrier substrate;
forming a thermopile structure, bonding the thermopile structure to the first surface of the carrier substrate, wherein the thermopile structure comprises a first substrate formed on the first surface of the carrier substrate, and a thermopile body formed on the first substrate, a first cavity penetrating through the first substrate is formed on the first substrate, the thermopile body is composed of at least one group of thermocouple pairs, and the thermopile body covers the first cavity.
The thermopile infrared sensor of the invention has the beneficial effects that:
the thermistor is arranged on the bearing substrate, so that the thermopile structure and the thermistor can be simultaneously formed in the same packaging structure, integrated packaging is realized, the process steps are shortened, the size of the infrared thermopile sensor is reduced, and the reliability of the infrared thermopile sensor is improved; in addition, can also detect the ambient temperature of thermopile structure through thermistor, calculate according to the temperature signal that the thermopile structure detected again to accurate measurement human temperature avoids the thermopile structure to receive the temperature error that infrared radiation influences caused, improves and detects the precision.
Furthermore, the thermistor is arranged on the first surface, the second surface and the inside of the bearing substrate, so that the thermistor can detect the ambient temperature of the thermopile structure conveniently, and the accuracy of human body induction and the use convenience are further improved.
Furthermore, the thermopile structure is electrically led out through the first electric connection structure, and the thermistor and the external circuit are electrically connected, so that the thermopile structure and the thermistor can be electrically led out respectively, the interference between a detection signal of the thermopile structure and a detection signal of the thermistor is avoided, the generation of a measurement error is avoided, and the measurement precision is improved.
Further, the top cover with the infrared filter layer is arranged, so that infrared light can be transmitted through the infrared filter layer, and temperature detection of the thermopile structure is facilitated; through setting up the annular articulamentum to make annular articulamentum, top cap and thermopile structure enclose into confined cavity with the second cavity jointly, thereby be convenient for better transmission of infrared light to the thermopile structure on, avoid other light to cause the interference to the infrared light.
The manufacturing method of the thermopile infrared sensor has the beneficial effects that:
through forming the bearing substrate who has thermistor for thermopile structure and thermistor are formed in same packaging structure, have realized integrated packaging, have shortened the technology step, have reduced infrared sensor's volume, and in addition, thermistor is formed on bearing substrate, can be convenient for detect thermopile structure's ambient temperature, thereby avoid the environment to thermopile structure temperature measurement degree of accuracy's influence, have improved the reliability.
Furthermore, different forming modes are corresponding to the forming positions of the thermistors relative to the bearing substrate, so that the thermistors are prevented from being damaged in the manufacturing process, the process steps are shortened, and the reliability of the infrared thermopile sensor is improved.
Further, through forming annular tie layer on the thermopile structure, the bonded top cap again to enclose into sealed second cavity through top cap, annular tie layer and thermopile structure, thereby better transmission infrared light avoids other light to treat the infrared that detects and cause the interference so that influence measurement accuracy.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a thermopile infrared sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a thermopile infrared sensor according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a thermopile infrared sensor according to another embodiment of the present invention;
fig. 4 to 14 are schematic structural diagrams corresponding to different steps of a method for manufacturing a thermopile infrared sensor according to embodiment 2 of the present invention.
Description of reference numerals:
1. a carrier substrate; 11. a first surface; 12. a second surface; 13. a groove; 14. a first substrate; 15. a second substrate; 2. a thermistor; 3. a thermopile structure; 31. a first substrate; 311. a first cavity; 32. a thermopile body; 33. an isolation layer; 4. a connection bump; 5. a first electrical connection structure; 6. a first interconnect structure; 7. a second interconnect structure; 8. an annular tie layer; 81. a second cavity; 9. and a top cover.
Detailed Description
At present, a thermopile infrared sensor manufactured is characterized in that a thermopile chip and a thermistor are respectively formed and respectively provided with a sub-packaging base, the process steps are longer, the size is larger, and the reliability is longer because the thermopile infrared sensor and the thermistor are electrically connected through an external lead.
The thermopile infrared sensor and the method for manufacturing the same according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in simplified form and are not to scale, but are provided for convenience and clarity in describing embodiments of the invention.
The terms "first," "second," and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if the method described herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.
Example 1
a carrier substrate 1 provided with a film-like thermistor 2, the carrier substrate 1 including opposing first and second surfaces 11 and 12;
the thermopile structure 3, the thermopile structure 3 includes a first substrate 31 provided with a first cavity 311 and a thermopile body 32 disposed on the first substrate 31, the thermopile body 32 is composed of at least one group of thermocouple pairs, and the first substrate 31 is disposed on the first surface 11 of the carrier substrate 1.
In the present embodiment, the thermistor 2 may be located on the first surface 11, the second surface 12, or within the carrier substrate 1 of the carrier substrate 1, so as to be formed in the same package structure as the thermopile structure, thereby realizing an integrated package.
The thermistor 2 is located on the first surface 11 of the carrier substrate 1 and comprises: the thermistor 2 wholly or partially protrudes from the first surface 11 of the carrier substrate 1, and when the thermistor 2 is located outside the range of the first cavity 311 on the first surface 11 of the carrier substrate 1, the part of the thermistor 2 wholly or partially protruding from the first surface 11 of the carrier substrate 1 is embedded in the first substrate 31; when the thermistor 2 is located on the first surface 11 of the carrier substrate 1 within the first cavity 311, the first cavity 311 exposes at least a portion of the thermistor 2, i.e., a portion of the thermistor 2 protruding entirely or partially from the first surface 11 of the carrier substrate 1 is exposed in the first cavity 311. It should be noted that the thermopile structure 3 includes a hot end and a cold end, the hot end is located above the first cavity 311, and the cold end is far away from the first cavity 311. When the thermistor 2 is located on the first surface 11 of the carrier substrate 1 outside the range of the first cavity 311, the thermistor 2 is close to the cold end, so that the thermistor 2 obtains a relatively accurate cold end temperature, and the measurement accuracy of the sensor is improved. When the thermistor 2 is located on the first surface of the carrier substrate 1 within the range of the first cavity 311, the first cavity 311 prevents the heat absorbed by the thermopile main body 32 from being transferred to the carrier substrate 1, so as to avoid the temperature of the hot end above the first cavity 311 from affecting the measurement result of the thermistor 2, thereby improving the measurement accuracy.
The thermistor 2 on the second surface 12 of the carrier substrate 1 comprises: the thermistor 2 wholly or partially protrudes from the second surface 12 of the carrier substrate 1, so that the thermistor 2 can be directly electrically connected with the outside, the process steps are saved, the process time is shortened, and the production efficiency is improved.
The thermistor 2 is disposed in the carrier substrate 1 and includes: the thermistor 2 is wholly wrapped in the bearing substrate 2; or the thermistor 2 is embedded in the bearing substrate 1, and the upper surface of the thermistor is flush with the first surface 11 of the bearing substrate 1; alternatively, the thermistor 2 is embedded in the carrier substrate 1 and the lower surface thereof is flush with the second surface 12 of the carrier substrate 1. Through setting up thermistor 2 in load-bearing substrate 1 to avoid thermistor 2 to be influenced by thermopile main part 32 hot junction temperature or cold junction temperature, so that its environmental temperature that can't measure comparatively accurate thermopile structure 3 has improved thermistor 2's measurement accuracy.
In particular, the carrier substrate 1 may be any suitable substrate material known to those skilled in the art, such as silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and may also be a ceramic base such as alumina, a quartz or glass base, or the like.
The thermopile structure 3 is formed on the first surface 11 of the bearing substrate 1, the thermopile structure 3 comprises a first substrate 31 with a first cavity 311 and a thermopile main body 32 formed by at least one group of thermocouple pairs, the thermopile main body 32 is arranged on the first substrate 31 and covers the first cavity 311, the first cavity 311 exposes part of the first surface 11 of the bearing substrate 1, the thermocouple pairs comprise two thermocouple materials which are electrically connected with each other, and a plurality of thermocouple pairs can be arranged to be connected in series, so that the high sensitivity of the infrared thermopile sensor is realized, and the quality and the reliability of the sensor are improved. The two thermocouple materials may be arranged side by side on the same horizontal plane or may be stacked in a direction perpendicular to the carrier substrate 1.
In order to facilitate the electric connection of the thermopile body 32 with the outside, a connection bump 4 is arranged between the carrier substrate 1 and the first substrate 31, a first electric connection structure 5 for electrically connecting the thermopile body 32 and the connection bump 4 is arranged on the thermopile body 32, a first interconnection structure 6 for electrically leading out the connection bump 4 is arranged on the carrier substrate 1, and the first interconnection structure 6 is electrically connected with an external circuit. In the present embodiment, the first electrical connection structure 5 includes a plug and an interconnection line, the interconnection line is disposed on the upper surface of the thermopile body 32 and electrically leads out the thermopile body 32, the plug penetrates the thermopile body 32 and the first substrate 31, and electrically connects the interconnection line to the connection bump 4, thereby electrically leading out the thermopile body 32.
In order to avoid interference between the monitoring signal of the thermistor 2 and the monitoring signal of the thermopile structure 3, the thermopile structure 3 and the thermistor 2 need to be respectively and electrically led out to an external circuit, so as to improve the measurement accuracy. Specifically, when the thermistor is entirely embedded in the carrier substrate 1: the second interconnection structure 7 is arranged in the bearing substrate 1, and the second interconnection structure 7 leads the electrical property of the thermistor 2 to an external circuit. When the thermistor 2 is disposed on the first surface 11 of the carrier substrate 1, or the lower surface of the thermistor 2 is embedded in the carrier substrate 1, and the upper surface of the thermistor 2 is flush with the first surface 11 of the carrier substrate 1: the thermistor 2 is electrically connected to the connection bump 4 through a wiring layer, refer to fig. 2. When the thermistor 2 is disposed on the second surface 12 of the carrier substrate 1, or the upper surface of the thermistor 2 is embedded in the carrier substrate 1, and the lower surface of the thermistor 2 is flush with the second surface 12 of the carrier substrate 1: the thermistor 2 is electrically connected to an external circuit, refer to fig. 3.
The thermistor 2 has a shape including linear surface electrodes arranged in an S-shape or a spiral shape. The material of the thermistor 2 may be a material having a negative temperature coefficient or a material having a positive temperature coefficient. The material of the thermistor 2 comprises one, two or more than two metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc and the like; alternatively, the thermistor includes a layer of semiconductor material; alternatively, the thermistor includes a semiconductor layer containing heavy metal doping ions of one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium, and vanadium. In this embodiment, the thermistor 2 is made of metal aluminum. The thermistor 2 is of a film-like structure, so that the thermistor 2 has a small volume, a fast thermal sensing speed and a high sensitivity, and the thermistor 2 can be formed by an atomic layer deposition or sputtering process, and the specific steps can be referred to below. Compared with the traditional chip form of a mounting structure, the thermistor 2 is manufactured through a semiconductor process, so that the process compatibility is improved, the integration of the thermistor and a thermopile structure can be better realized, the process is simplified, and the requirements of miniaturization and batch production are met.
A CMOS circuit is arranged in the bearing substrate 1, and the CMOS circuit is a reading circuit or a driving circuit; the thermistor 2 and any metal layer in the CMOS circuit are positioned on the same layer; or the thermistor 2 is positioned above the CMOS circuit; alternatively, the thermistor 2 is located below the CMOS circuit. It should be noted that the thermistor 2 and the CMOS circuit may be electrically connected or not electrically connected, when the thermistor 2 and the CMOS circuit are not electrically connected, the CMOS circuit needs an additional electrical connection structure to electrically connect the same to an external circuit, and when the thermistor 2 is integrally embedded inside the carrier substrate 1, the thermistor 2 may be formed while forming any one of the metal layers of the CMOS circuit 2.
In this embodiment, the thermopile structure 3 is provided with the annular connection layer 8, the annular connection layer 8 has a first opening penetrating through the annular connection layer 8, the annular connection layer 8 is provided with the top cover 9, the top cover 9 covers the first opening to form the second cavity 81, and a portion of the top cover 9 opposite to the second cavity 81 is provided with the infrared filter layer. Specifically, a radiation penetration window may be formed above the infrared radiation region of the top cover 9, and the material of the top cover 9 may be glass, plastic, semiconductor, or the like, so as to transmit infrared light through the radiation penetration window. The shape of the radiation penetration window can be selected according to the requirement, such as a circle, a rectangle, etc. The material of the radiation transmission window comprises one or both of a semiconductor or an organic filter material. The semiconductor material includes silicon, silicon on insulator, etc., and the organic filter material includes polyethylene, polypropylene, etc. An infrared filter layer 9 may be arranged on the radiation transmission window. The infrared filter layer 9 filters infrared rays having a specific wavelength, thereby reducing optical crosstalk. The infrared filter layer 9 is made of an infrared filter.
The annular connection layer 8 includes: a first annular bump disposed on the thermopile structure 3; the annular bonding layer is bonded on the first annular bump; and the second annular bump is arranged on the annular bonding layer and is bonded and connected with the top cover 9. The bonding manner includes metal bonding, and the material of the first annular bump and the second annular bump may be a metal material, and the metal material includes a single layer, an alloy, or a laminated film of aluminum, titanium, nickel, gold, chromium, copper, or platinum.
In other embodiments, a top cover is disposed on the thermopile structure 3, the top cover has a groove extending to a part of the thickness of the top cover, the top cover and the thermopile structure 3 enclose a second cavity, and a portion of the top cover opposite to the second cavity is disposed with an infrared filter layer.
In summary, in the embodiment of the invention, the thermistor is arranged on the carrier substrate, so that the thermopile structure and the thermistor can be simultaneously formed in the same package structure, thereby realizing integrated package, shortening the process steps, reducing the volume of the infrared thermopile sensor, and improving the reliability of the infrared thermopile sensor; in addition, can also detect the ambient temperature of thermopile structure through thermistor, calculate according to the temperature signal that the thermopile structure detected again to accurate measurement human temperature avoids the thermopile structure to receive the temperature error that infrared radiation influences caused, improves and detects the precision.
Furthermore, the thermistor is arranged on the first surface, the second surface and the inside of the bearing substrate, so that the thermistor can detect the ambient temperature of the thermopile structure conveniently, and the accuracy of human body induction and the use convenience are further improved.
Furthermore, the thermopile structure is electrically led out through the first electric connection structure, and the thermistor and the external circuit are electrically connected, so that the thermopile structure and the thermistor can be electrically led out respectively, the interference between a detection signal of the thermopile structure and a detection signal of the thermistor is avoided, the generation of a measurement error is avoided, and the measurement precision is improved.
Further, the top cover with the infrared filter layer is arranged, so that infrared light can be transmitted through the infrared filter layer, and temperature detection of the thermopile structure is facilitated; through setting up the annular articulamentum to make annular articulamentum, top cap and thermopile structure enclose into confined cavity with the second cavity jointly, thereby be convenient for better transmission of infrared light to the thermopile structure on, avoid other light to cause the interference to the infrared light.
Example 2
s01: providing a bearing substrate, wherein the bearing substrate comprises a first surface and a second surface which are opposite;
s02: forming a thermistor in the bearing substrate, the first surface of the bearing substrate or the second surface of the bearing substrate;
s03: forming a thermopile structure, bonding the thermopile structure on the first surface of the bearing substrate, wherein the thermopile structure comprises a first substrate formed on the first surface of the bearing substrate and a thermopile main body formed on the first substrate, a first cavity penetrating through the first substrate is formed on the first substrate, the thermopile main body is at least composed of a group of thermocouple pairs, and the thermopile main body covers the first cavity.
Step S0N does not represent a chronological order.
Fig. 4 to 14 are schematic structural diagrams corresponding to corresponding steps of a method for manufacturing a thermopile infrared sensor according to this embodiment, and the method for manufacturing a thermopile infrared sensor according to this embodiment is described in detail with reference to fig. 4 to 14.
Referring to fig. 4, step S01 is performed to provide a carrier substrate 1, where the carrier substrate 1 includes a first surface 11 and a second surface 12 opposite to each other. The material of the carrier substrate 1 can be as described in embodiment 1, and is not described herein again.
Referring to fig. 4 to 8, step S02 is performed to form the thermistor 2 in the carrier substrate 1, the first surface 11 of the carrier substrate 1 or the second surface 12 of the carrier substrate 1.
In the present embodiment, the thermistor 2 is formed in the carrier substrate 1, or when the thermistor 2 is formed on the first surface 11 of the carrier substrate 1: before forming the thermopile structure 3, the thermistor 2 is formed. When the thermistor 2 is formed in the carrier substrate 1, the thermistor 2 may be completely embedded in the carrier substrate, or the lower surface of the thermistor 2 is embedded in the carrier substrate 1, and the upper surface is flush with the first surface 11 of the carrier substrate, or the upper surface of the thermistor 2 is embedded in the carrier substrate 1, and the lower surface is flush with the second surface 12 of the carrier substrate.
Referring to fig. 4-6, when the thermistor 2 is embedded in the carrier substrate 1 at the lower surface and the upper surface is flush with the first surface 11 of the carrier substrate, or the thermistor 2 is embedded in the carrier substrate 1 at the upper surface and the lower surface is flush with the second surface 12 of the carrier substrate, the method for forming the thermistor 2 in the carrier substrate 1 includes: providing a carrier substrate 1, refer to fig. 4; forming a groove 13 in the carrier substrate 1, see fig. 5; the thermistor 2 is deposited such that the thermistor 2 fills the recess 13, see fig. 6.
Referring to fig. 7 to 8, when the thermistor 2 is entirely embedded in the carrier substrate 1, the method of forming the thermistor 2 in the carrier substrate 1 includes: providing a first substrate 14, see fig. 7; depositing the thermistor 2 on the first substrate 14, with continued reference to fig. 7; a second substrate 15 is formed on the first substrate 14, the second substrate 15 covers the thermistor 2, and referring to fig. 8, the first substrate 14 and the second substrate 15 constitute a carrier substrate 1. It should be noted that when depositing the thermistor 2 on the first substrate 14, a groove may be etched in the first substrate 14; depositing to form a thermistor to fill the groove, wherein one surface of the formed thermistor is embedded in the first substrate 14, and the other surface of the formed thermistor is flush with the surface of the first substrate 14; alternatively, a thermistor material layer is formed on the first substrate 14; and etching the thermistor material layer to form the thermistor 2, wherein the formed thermistor 2 protrudes out of the surface of the first substrate 14.
The method for forming the thermistor 2 on the first surface 11 or the second surface 12 of the bearing substrate 1 comprises the following steps: providing a first substrate; depositing and forming a thermistor material layer on the first surface or the second surface of the first substrate; and etching the thermistor material layer to form the thermistor. It should be noted that when the thermistor 2 is formed on the second surface 12 of the carrier substrate 1: the thermistor 2 is formed before or after bonding the thermopile structure 3 to the first surface 11 of the carrier substrate 1.
In addition, after the thermistor 2 is formed and before the thermopile structure 3 is bonded to the first surface 11 of the carrier substrate 1, the connecting bump 4 is formed on the first surface 11 of the carrier substrate 1 so as to electrically lead out the thermopile structure formed in the subsequent row; before or after the connection bumps 4 are formed, first interconnection structures 6 for leading out the connection bumps 4 are formed on the carrier substrate 1, and the first interconnection structures 6 are electrically connected with an external circuit, so that a subsequently formed thermopile structure is electrically connected with the external circuit through the connection bumps 4 and the first interconnection structures 6. It should be noted that the step of forming the connecting bump 4 may refer to the step of forming the thermistor 2 in which the lower surface of the thermistor 2 is embedded in the carrier substrate 1 and the upper surface is flush with the first surface 11 of the carrier substrate, or the step of forming the thermistor 2 in which the upper surface of the thermistor 2 is embedded in the carrier substrate 1 and the lower surface is flush with the second surface 12 of the carrier substrate, and when the lower surface of the thermistor 2 is embedded in the carrier substrate 1 and the upper surface is flush with the first surface 11 of the carrier substrate, or the upper surface of the thermistor 2 is embedded in the carrier substrate 1 and the lower surface is flush with the second surface 12 of the carrier substrate, the connecting bump 4 may be formed simultaneously with the thermistor 2, which is not described herein again. In other embodiments, the connection bump 4 may also be formed after the formation of the thermopile structure, which is referred to the prior art and is not described herein again.
In order to electrically connect the thermistor 2 to an external circuit, it is necessary to make specific settings according to the formation position of the thermistor 2. For example, referring to fig. 9, when the thermistor 2 is formed on the first surface 11 of the carrier substrate 1, or the thermistor 2 is formed in the carrier substrate 1, and the upper surface of the thermistor 2 is flush with the first surface 11 of the carrier substrate 1, the method further includes: before bonding the thermopile structure to the first surface 11 of the carrier substrate 1, a wiring layer is formed on the carrier substrate 1 to electrically connect the thermistor 2 to the connection bump 4. Referring to fig. 10, when the thermistor 2 is formed on the second surface 12 of the carrier substrate 1, or the thermistor 2 is formed in the carrier substrate 1, and the lower surface of the thermistor 2 is flush with the second surface 12 of the carrier substrate 1, the method further includes: after the thermopile structure 3 is bonded to the first surface 11 of the carrier substrate 1, the thermistor 2 is electrically connected to the outside, and more specifically, after the thermopile structure 3 is electrically connected to the outside, the thermistor 2 is electrically connected to the outside. Referring to fig. 11, when the thermistor 2 is entirely embedded in the mounting substrate 1, the present invention further includes: after the carrier substrate 1 is formed, a second interconnect structure 7 is formed on the carrier substrate 1 to electrically lead out the thermistor 2 to an external circuit.
In the present embodiment, before or after the thermistor 2 is formed in the carrier substrate 1, a CMOS circuit may also be formed in the carrier substrate 1 so that the thermistor 2 is formed below or above the CMOS circuit. In other embodiments, the thermistor 2 is formed within the carrier substrate 1 when the CMOS circuit is formed within the carrier substrate 1. When forming any one metal layer of the CMOS circuit, the thermistor 2 is formed so that the formed thermistor 2 is located in the same layer as the metal layer.
Referring to fig. 12-13, step S03 is executed to form a thermopile structure 3, bond the thermopile structure 3 to the first surface 11 of the supporting substrate 1, where the thermopile structure 3 includes a first substrate 31 formed on the first surface 11 of the supporting substrate 1, and a thermopile body 32 formed on the first substrate 31, a first cavity 311 penetrating through the first substrate 31 is formed on the first substrate 31, the thermopile body 32 is formed by at least one set of thermocouple pairs, and the thermopile body 32 covers the first cavity 311.
In the present embodiment, referring to fig. 12, the thermopile structure 3 is formed first, and the method of forming the thermopile structure 3 includes: an isolation layer 33 is formed on the first substrate 31, and the isolation layer 33 serves to isolate the subsequently formed thermopile body 32 from the first substrate 31 while serving as a support layer for the thermopile body 32. The material of the isolation layer 33 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride. The isolation layer 33 is formed using a deposition process or a thermal oxidation process. The thermopile body 32 is formed on the isolation layer 33, and the thermopile body 32 includes at least one pair of thermocouple pairs, which are two thermocouple materials electrically connected to each other, and the two thermocouple materials may be located on the same plane, arranged in parallel, or stacked up and down. And then, an absorption layer is formed on the thermocouple pair and is used for absorbing infrared light and converting the infrared light into heat energy. The material of the absorption layer comprises: one or more of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbonitride, silicon oxynitride, boron nitride, and boron carbonitride. The forming process of the absorption layer comprises the following steps: a physical vapor deposition process or a chemical vapor deposition process.
Referring to fig. 13, after the thermopile structure 3 is formed, the thermopile structure 3 is bonded on the first surface 11 of the carrier substrate 11. It should be noted that the thermopile structure 3 may be formed before or after forming the thermistor in the first surface 11, the second surface 12 of the carrier substrate 1 or the carrier substrate 1, and the thermopile structure 3 may also be formed when forming the thermistor in the first surface 11, the second surface 12 of the carrier substrate 1 or the carrier substrate 1.
In order to facilitate electrical leading of the thermopile structure to the connection bumps 4, before or after bonding the thermopile structure 3 to the first surface 11 of the carrier substrate 1, a first electrical connection structure 5 is formed on the thermopile structure 3, and the first electrical connection structure 5 electrically leads the thermopile body 31 to the connection bumps 4. The method specifically comprises the following steps: forming a through hole penetrating the thermopile body 32 and the first substrate 31 to expose at least a part of the connection bump 4; forming a plug filling the through hole and covering the surface of the exposed connection bump 4; interconnect lines are formed to electrically connect the plugs with the thermopile body 32.
Referring to fig. 14, after bonding the thermopile structure 3 to the first surface 11 of the carrier substrate 1, the method further includes: forming an annular connection layer 8 on the thermopile structure 3, the annular connection layer 8 having a first opening; a top cover 9 with an infrared filter layer is provided, the top cover 9 being bonded to the annular connection layer 8 and covering the first opening, forming a second cavity 81. The method specifically comprises the following steps: forming a first ring-shaped bump on the thermopile body; providing a top cover 9 with an infrared filter layer, and forming a second annular bump on the top cover 9; an annular bonding layer is formed on the first annular bump or the second annular bump, and another annular bump formed with the annular bonding layer is bonded with the annular bonding layer in a metal bonding mode, so that the top cover 9 and the thermopile structure 3 are bonded, and the sealing performance of the second cavity 81 is fully ensured. In other embodiments, a connection layer is formed on an upper surface of the thermopile body; etching the connecting layer to form a first opening penetrating through the connecting layer, wherein the connecting layer outside the first opening forms an annular connecting layer 8; providing a top cover 9 having an infrared filter layer; a top cover 9 is bonded to the annular connection layer 8 and covers the first opening, enclosing a second cavity 81.
In summary, the embodiment of the invention forms the bearing substrate with the thermistor, so that the thermopile structure and the thermistor are formed in the same packaging structure, thereby realizing integrated packaging, shortening the process steps, and reducing the volume of the infrared sensor.
Furthermore, different forming modes are corresponding to the forming positions of the thermistors relative to the bearing substrate, so that the thermistors are prevented from being damaged in the manufacturing process, the process steps are shortened, and the reliability of the infrared thermopile sensor is improved.
Further, through forming annular tie layer on the thermopile structure, the bonded top cap again to enclose into sealed second cavity through top cap, annular tie layer and thermopile structure, thereby better transmission infrared light avoids other light to treat the infrared that detects and cause the interference so that influence measurement accuracy.
It should be noted that, in the present specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the structural embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (20)
1. A thermopile infrared sensor, comprising:
the bearing substrate is provided with a film-shaped thermistor and comprises a first surface and a second surface which are opposite;
the thermopile structure comprises a first substrate provided with a first cavity and a thermopile main body arranged on the first substrate, wherein the thermopile main body at least comprises a group of thermocouple pairs, and the first substrate is arranged on the first surface of the bearing substrate.
2. The thermopile infrared sensor of claim 1, wherein the thermistor is located at the carrier substrate first surface, second surface, or within the carrier substrate.
3. The thermopile infrared sensor according to claim 1, wherein a connection bump is disposed between the carrier substrate and the first substrate, a first electrical connection structure for electrically connecting the thermopile body and the connection bump is disposed on the thermopile body, a first interconnection structure for electrically leading out the connection bump is disposed on the carrier substrate, and the first interconnection structure is electrically connected to an external circuit.
4. The thermopile infrared sensor of claim 1, wherein the thermistor is disposed on the first surface of the carrier substrate, or wherein the lower surface of the thermistor is embedded in the carrier substrate, and wherein the upper surface of the thermistor is flush with the first surface of the carrier substrate:
the thermistor is electrically connected with the connecting lug through the wiring layer; alternatively, the first and second electrodes may be,
a second interconnection structure is arranged in the bearing substrate and electrically leads out the thermistor to an external circuit;
when the thermistor is arranged on the second surface of the bearing substrate, or the upper surface of the thermistor is embedded in the bearing substrate, and when the lower surface of the thermistor is flush with the second surface of the bearing substrate:
the thermistor is electrically connected with an external circuit.
5. The thermopile infrared sensor of claim 1, wherein the thermistor is disposed on the first surface of the carrier substrate within the first cavity, the first cavity exposing at least a portion of the thermistor.
6. The thermopile infrared sensor of claim 1, wherein the thermistor has a shape comprising linear planar electrodes arranged in an S-shape or a spiral shape.
7. The thermopile infrared sensor according to claim 1, wherein the material of the thermistor comprises one, two or more metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc; alternatively, the first and second electrodes may be,
the thermistor includes a semiconductor material layer; alternatively, the first and second electrodes may be,
the thermistor comprises a semiconductor layer containing heavy metal doping, and the heavy metal doping ions are one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium and vanadium.
8. The thermopile infrared sensor of claim 1, wherein a CMOS circuit is disposed within the carrier substrate, the CMOS circuit being a readout circuit or a drive circuit;
the thermistor and any metal layer in the CMOS circuit are positioned on the same layer; alternatively, the first and second electrodes may be,
the thermistor is positioned above the CMOS circuit; alternatively, the first and second electrodes may be,
the thermistor is positioned below the CMOS circuit.
9. The thermopile infrared sensor according to claim 1, wherein an annular connection layer is disposed on the thermopile structure, the annular connection layer has a first opening penetrating through the annular connection layer, a top cap is disposed on the annular connection layer, the top cap covers the first opening to form a second cavity, and an infrared filter layer is disposed on a portion of the top cap opposite to the second cavity; alternatively, the first and second electrodes may be,
the thermopile structure is provided with a top cover, the top cover is provided with a groove extending to the partial thickness of the top cover, the top cover and the thermopile structure enclose a second cavity, and the part of the top cover opposite to the second cavity is provided with an infrared filter layer.
10. The thermopile infrared sensor of claim 9, wherein the annular connection layer comprises:
a first annular bump disposed on the thermopile structure;
the annular bonding layer is bonded and arranged on the first annular bump;
and the second annular bump is arranged on the annular bonding layer and is bonded and connected with the top cover.
11. A method of making a thermopile infrared sensor, comprising:
providing a carrier substrate, wherein the carrier substrate comprises a first surface and a second surface which are opposite;
forming a thermistor in the carrier substrate, the first surface of the carrier substrate or the second surface of the carrier substrate;
forming a thermopile structure, bonding the thermopile structure to the first surface of the carrier substrate, wherein the thermopile structure comprises a first substrate formed on the first surface of the carrier substrate, and a thermopile body formed on the first substrate, a first cavity penetrating through the first substrate is formed on the first substrate, the thermopile body is composed of at least one group of thermocouple pairs, and the thermopile body covers the first cavity.
12. The method of manufacturing a thermopile infrared sensor of claim 11, wherein the thermistor is formed within the carrier substrate, or wherein the thermistor is formed on the first surface of the carrier substrate: forming the thermistor prior to bonding the thermopile structure to the carrier substrate first surface.
13. The method of manufacturing a thermopile infrared sensor of claim 11, wherein said thermistor is formed on said carrier substrate second surface:
after the thermopile structure is bonded to the first surface of the carrier substrate, the thermistor is formed.
14. The method of manufacturing a thermopile infrared sensor of claim 11, wherein the method of forming the thermistor within the carrier substrate comprises:
providing a bearing substrate;
forming a groove in the carrier substrate;
depositing to form a thermistor, wherein the thermistor fills the groove; alternatively, the first and second electrodes may be,
providing a first substrate;
depositing and forming a thermistor on the first substrate;
and forming a second substrate on the first substrate, wherein the second substrate covers the thermistor, and the first substrate and the second substrate form the bearing substrate.
15. The method of manufacturing a thermopile infrared sensor of claim 11, wherein the method of forming a thermistor on the first or second surface of the carrier substrate comprises:
providing a first substrate;
depositing and forming a thermistor material layer on the first surface or the second surface of the first substrate;
and etching the thermistor material layer to form the thermistor.
16. The method of claim 11, wherein a connection bump is formed on the first surface of the carrier substrate before the thermopile structure is bonded to the first surface of the carrier substrate;
forming a first interconnection structure on the carrier substrate for electrically leading out the connection bump before or after forming the connection bump, the first interconnection structure being electrically connected to an external circuit;
before or after the thermopile structure is bonded to the first surface of the bearing substrate, a first electric connection structure is formed on the thermopile structure, and the first electric connection structure leads the thermopile main body out to the connection bump electrically.
17. The method of claim 16, wherein the thermistor is formed on the first surface of the carrier substrate, or the thermistor is formed in the carrier substrate with the upper surface of the thermistor flush with the first surface of the carrier substrate, further comprising:
before bonding the thermopile structure to the first surface of the bearing substrate, forming a wiring layer on the bearing substrate to electrically connect the thermistor to the connection bump;
the thermistor is formed on the second surface of the carrier substrate, or the thermistor is formed in the carrier substrate, and when the lower surface of the thermistor is flush with the second surface of the carrier substrate, the thermistor further comprises:
after the thermopile structure is bonded to the first surface of the bearing substrate, the thermistor is electrically connected with the outside.
18. The method of claim 11, wherein the thermistor is disposed on the first surface of the carrier substrate, or the thermistor is disposed in the carrier substrate, and further comprising:
after the carrier substrate is formed, a second interconnect structure is formed on the carrier substrate to electrically lead the thermistor out to an external circuit.
19. The method of manufacturing a thermopile infrared sensor of claim 11, wherein a CMOS circuit is formed within the carrier substrate either before or after the thermistor is formed within the carrier substrate; alternatively, the first and second electrodes may be,
and when a CMOS circuit is formed in the bearing substrate, the thermistor is formed in the bearing substrate.
20. The method of manufacturing a thermopile infrared sensor of claim 11, further comprising, after bonding the thermopile structure to the carrier substrate first surface:
forming an annular connection layer on the thermopile structure, the annular connection layer having a first opening;
and providing a top cover with an infrared filter layer, wherein the top cover is bonded to the annular connecting layer and covers the first opening to form a second cavity.
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