CN112614864A - Infrared thermopile sensor and manufacturing method thereof - Google Patents
Infrared thermopile sensor and manufacturing method thereof Download PDFInfo
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- CN112614864A CN112614864A CN202011606307.8A CN202011606307A CN112614864A CN 112614864 A CN112614864 A CN 112614864A CN 202011606307 A CN202011606307 A CN 202011606307A CN 112614864 A CN112614864 A CN 112614864A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 230000005855 radiation Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910001385 heavy metal Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 7
- 229910000679 solder Inorganic materials 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010923 batch production Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Abstract
The invention provides an infrared thermopile sensor and a manufacturing method thereof, wherein the infrared thermopile sensor comprises: a carrier substrate; the thermopile structure is arranged above the bearing substrate and comprises a thermopile main body which is formed by at least one group of thermocouple pairs and is used for receiving infrared radiation; and the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, and is positioned on the outer side of the thermopile main body. According to the infrared thermopile sensor, the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, the thermopile structure is formed on the bearing substrate, and the thermopile structure and the thermistor are arranged on the same bearing substrate, so that the better integration of the thermistor and the thermopile can be realized, and the requirement of miniaturization can be met.
Description
Technical Field
The invention relates to the field of infrared temperature measurement, in particular to an infrared thermopile sensor and a manufacturing method thereof.
Background
Among the wide variety of sensors, temperature sensors are the first resort in terms of application area and number. With the development of modern electronic technology, temperature sensors are increasingly widely used in industrial technology, scientific research and daily life, and temperature sensors using thermopiles as temperature sensing elements are widely used in the fields of temperature measurement, control and the like. As the requirements of various industries on temperature control are stricter and more precise, the requirements on the reliability of products are stricter, the requirements on the volume are smaller, the requirements on the sensitivity are higher, and the requirements on installation and use are more convenient.
The infrared thermopile sensor manufactured at present is generally integrated with a thermistor, a thermopile structure and the thermistor are manufactured respectively when the infrared thermopile sensor is manufactured, and then the thermistor and the thermopile are welded in a packaging shell respectively. The manufacturing method causes the integration of the thermopile structure and the thermistor to be poor, and the volume of the infrared thermopile sensor cannot be further reduced.
Therefore, a new infrared thermopile sensor is desired, which can better realize the integration of the thermistor and the thermopile structure, so as to simplify the process and meet the requirements of miniaturization and mass production.
Disclosure of Invention
The invention discloses an infrared thermopile sensor and a manufacturing method thereof, which can solve the problem of poor integration level of a thermopile structure and a thermistor.
In order to solve the above technical problem, the present invention provides an infrared thermopile sensor, including:
a carrier substrate;
the thermopile structure is arranged above the bearing substrate and comprises a thermopile main body which is formed by at least one group of thermocouple pairs and is used for receiving infrared radiation;
and the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, and is positioned on the outer side of the thermopile main body.
The invention also provides a manufacturing method of the infrared thermopile sensor, which comprises the following steps:
providing a carrier substrate, wherein the carrier substrate is provided with a first surface and a second surface which are opposite;
forming a thermopile structure on the first surface of the bearing substrate, wherein the thermopile structure comprises a thermopile body consisting of at least one group of thermocouple pairs, and the thermopile body is used for receiving infrared radiation;
and forming a thermistor in the bearing substrate or on the second surface of the bearing substrate.
The invention has the beneficial effects that:
according to the infrared thermopile sensor, the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, the thermopile structure is formed on the bearing substrate, and the thermopile structure and the thermistor are arranged on the same bearing substrate, so that the better integration of the thermistor and the thermopile can be realized, and the requirement of miniaturization can be met.
Furthermore, the thermistor is closer to the cold end of the thermopile structure, so that the obtained cold end temperature is more accurate, and the measurement precision of the sensor can be improved.
According to the manufacturing method of the infrared thermopile sensor, the thermistor and the thermopile structure are formed on the same bearing substrate through a semiconductor process, the process flow is simplified, the batch production is realized, the thermistor can be formed before and after the thermopile structure is formed, and the process flexibility is improved.
Furthermore, the thermopile structure and the thermistor structure can be formed through a semiconductor process, and the compatibility is good.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts.
Fig. 1 shows a schematic structural diagram of an infrared thermopile sensor of embodiment 1.
Fig. 2 shows a schematic structural diagram of another infrared thermopile sensor of embodiment 1.
Fig. 3 to 7 are schematic structural diagrams corresponding to different steps in the manufacturing method of the infrared thermopile sensor according to embodiment 2.
Description of reference numerals:
10-a carrier substrate; 11-a thermistor; 12-an insulating cavity; 13-lower cover plate; 14-a conductive bump; 15-conductive posts; 20-a thermopile structure; 21-a thermopile body; 22-a first electrical connection; 23-a second electrical connection; 24-an absorbent layer; 25-a passivation layer; 26-an isolation layer; 220-first solder balls; 230-second solder balls; 101-a first substrate; 102-a dielectric layer; 30-a top cover; 31-first cavity.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in simplified form and are not to scale, but are provided for convenience and clarity in describing embodiments of the invention.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
If the method herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps may be performed, and some steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.
Example 1
Referring to fig. 1, the present embodiment provides an infrared thermopile sensor, and fig. 1 shows a schematic structural diagram of an infrared thermopile sensor according to the present embodiment, where the infrared thermopile sensor includes:
a carrier substrate 10;
a thermopile structure 20 (shown in a rectangular dashed box), the thermopile structure 20 being disposed above the carrier substrate 10, the thermopile structure 20 including an isolation layer 26 on the carrier substrate 10, a thermopile body 21 (shown in an oval box) composed of at least one set of thermocouple pairs, the thermopile body 21 being configured to receive infrared radiation; in this embodiment, the upper surface of the thermopile main body 21 is covered with the absorption layer 25, and the absorption layer 24 can better absorb infrared radiation.
And a thermistor 11 disposed on a lower surface of the carrier substrate 10 or embedded in the carrier substrate 10 (the thermistor 11 is embedded in the carrier substrate 10 in the figure), wherein the thermistor 11 is located outside the thermopile main body 21.
The thermistor embedded in the mounting substrate 10 includes: 1. the thermistor is wholly wrapped in the bearing substrate or the lower surface of the thermistor is embedded in the bearing substrate 10, and the upper surface of the thermistor is flush with the upper surface of the bearing substrate. The thermistor sets up in the lower surface of carrying substrate and includes: the thermistor wholly or partially protrudes from the lower surface of the bearing substrate or the lower surface of the thermistor is flush with the lower surface of the bearing substrate.
In particular, the carrier substrate 10 may be any suitable substrate material known to those skilled in the art, such as silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and may also be a ceramic base such as alumina, a quartz or glass base, and the like. The thermopile structure 20 is formed on the upper surface of the carrier substrate 10, the thermopile structure 20 includes a thermopile main body 21 formed by at least one set of thermocouple pairs, the thermocouple pairs include two thermocouple materials electrically connected with each other, and a plurality of thermocouple pairs can be arranged in series to realize high sensitivity of the infrared thermopile sensor, thereby improving quality and reliability of the sensor. The two thermocouple materials may be arranged side by side on the same horizontal plane or may be stacked in a direction perpendicular to the carrier substrate 10.
In this embodiment, the carrier substrate 10 includes an insulating cavity 12, the thermopile main body 21 and the insulating cavity 12 are provided with overlapping portions in a projection in a surface direction of the carrier substrate 10, the thermopile structure 20 includes a cold junction and a hot junction, the hot junction is located above the insulating cavity, the cold junction is far away from the insulating cavity, and in an alternative, regions surrounded by the hot junction are all disposed in a region surrounded by a boundary of the insulating cavity 12. In this embodiment, the thermistor 11 is disposed outside the heat insulation cavity 12, and the thermistor 11 is close to the cold junction. The insulating cavity 12 is used to prevent the heat absorbed by the thermopile body from being transferred to the carrier substrate 10, so as to increase the temperature difference between the hot junction and the cold junction and improve the sensitivity. The thermistor 11 is closer to the cold end of the thermopile structure 20, so that the obtained cold end temperature is more accurate, and the measurement precision of the sensor can be improved.
In this embodiment, the thermistor 11 is embedded in the carrier substrate 10, that is, the upper and lower surfaces of the thermistor 11 are both located inside the carrier substrate 10, in other embodiments, the thermistor 11 may also be located on the lower surface of the carrier substrate 10, at this time, the surface of the thermistor 11 may be flush with the surface of the carrier substrate 10, and the thermistor 11 may also protrude from the lower surface of the carrier substrate 10.
The thermistor 11 has a shape including a line-like shape arranged in an S-shape or a spiral shape. The material of the thermistor 11 comprises one, two or more than two metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc and the like; or a layer of semiconductor material; or a semiconductor layer containing heavy metal doping, wherein the heavy metal doping ions are: one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium, and vanadium. In this embodiment, the thermistor 11 has a film-like structure and is formed by an atomic layer deposition or sputtering process. Compared with the traditional chip form of a mounting structure, the thermistor 11 is manufactured by a semiconductor process, so that the process compatibility is improved, the integration of the thermistor and a thermopile structure can be better realized, the process is simplified, and the requirements of miniaturization and batch production are met.
In this embodiment, the infrared thermopile sensor further includes a lower cover plate 13, where the lower cover plate 13 is bonded below the carrier substrate 10, and the lower cover plate 13 seals the thermal insulation cavity 12. The material of lower apron can refer to the material setting of load-bearing substrate, can glue through dry film or structure and bond lower apron 13 on load-bearing substrate, can set up the thickness of lower apron earlier and on the bonding, also can bond the lower apron that is thicker earlier on load-bearing substrate, thins suitable thickness to lower apron.
In this embodiment, the electrical property of the thermistor is led out from the lower cover plate 13, specifically, the lower surface of the lower cover plate 13 is provided with a conductive bump 14, and the thermistor 11 is electrically connected with the conductive bump 14 through a conductive pillar 15 penetrating through the lower cover plate 13. In another embodiment, the thermistor 11 is located in the carrier substrate 10, and the electrical property of the thermistor 11 is extracted from the upper surface or the lower surface of the carrier substrate 10 through a conductive plug formed in the carrier substrate 10; or, the thermistor 11 is located on the lower surface of the carrier substrate 10, and an interconnection structure electrically connected to the thermistor 11 is disposed on the lower surface of the carrier substrate 10. Of course, the electrical property of the thermistor can also be led upwards, such as from the upper surface of the infrared thermopile sensor.
Referring to fig. 2, in one embodiment, the infrared thermopile sensor further includes a top cap 30, and the top cap 30 is disposed above the thermopile structure and forms a first cavity 31 with an upper surface of the thermopile structure. The first cavity 31 is a sealed cavity, the top cover 30 may be a silicon wafer, and a silicon material may be transparent to infrared rays, or a window may be formed in the top cover 30 for transmitting infrared rays.
With continued reference to fig. 2, the thermopile structure further includes a passivation layer 25, the passivation layer 25 covering the upper surface of the absorber layer 24 but not covering the absorber layer 24 over the insulating cavity 12, the exposed absorber layer 24 for absorbing infrared radiation. The thermopile structure further includes a first electrical connection portion 22 and a second electrical connection portion 23, a first solder ball 220 and a second solder ball 230 are disposed on the lower surface of the lower cover plate 13, and the first electrical connection portion 22 is electrically connected to the first solder ball; the second electrical connection portion 23 electrically connects the second solder ball 230, one of the first solder ball 220 and the second solder ball 230 serves as an input terminal of the infrared thermopile sensor, and the other serves as an output terminal of the infrared thermopile sensor. The conductive bumps 14 of the thermistor 11 are also located on the lower surface of the lower cover plate 13, and are located on the same plane as the first solder balls 220 and the second solder balls 230, so that the infrared thermopile sensor can be electrically connected to the circuit board in the subsequent process.
According to the infrared thermopile sensor, the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, the thermopile structure is formed on the bearing substrate, and the thermopile structure and the thermistor are arranged on the same bearing substrate, so that the better integration of the thermistor and the thermopile can be realized, and the requirement of miniaturization can be met.
Furthermore, the thermistor is closer to the cold end of the thermopile structure, so that the obtained cold end temperature is more accurate, and the measurement precision of the sensor can be improved.
Example 2
Embodiment 2 provides a method for manufacturing an infrared thermopile sensor, including the steps of:
s01: providing a carrier substrate, wherein the carrier substrate is provided with a first surface and a second surface which are opposite;
s02: forming a thermopile structure on the first surface of the bearing substrate, wherein the thermopile structure comprises a thermopile body consisting of at least one group of thermocouple pairs, and the thermopile body is used for receiving infrared radiation;
s03: and forming a thermistor in the bearing substrate or on the second surface of the bearing substrate.
Step S0N does not represent a chronological order.
The forming of the thermistor in the carrier substrate includes: 1. the thermistor is wholly wrapped in the bearing substrate or the lower surface of the thermistor is embedded in the bearing substrate, and the upper surface of the thermistor is flush with the bearing substrate. Forming the thermistor on the second surface of the carrier substrate includes: the thermistor wholly or partially protrudes from the second surface of the bearing substrate or the lower surface of the thermistor is flush with the lower surface of the bearing substrate.
Fig. 3 to 7 are schematic structural diagrams corresponding to different steps of a method for manufacturing an infrared thermopile sensor according to embodiment 2 of the present invention, and please refer to fig. 3 to 7 to describe the steps in detail.
Referring to fig. 3, in the present embodiment, the thermistor is formed inside the carrier substrate, and the method of forming the carrier substrate and the thermistor includes: the first substrate 101 is provided, and the material of the first substrate 101 includes silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors, and may be a ceramic base such as alumina, a quartz or glass base, or the like. Forming a thermistor material layer on the upper surface of the first substrate 101 by a deposition process, wherein the thermistor material layer comprises the following materials: one, two or more than two metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc and the like; or a layer of semiconductor material; or a semiconductor layer containing heavy metal doping, wherein the heavy metal doping ions are: one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium, and vanadium. The deposition process includes an atomic layer deposition or sputtering process. After the thermistor material layer is formed, the thermistor material layer is patterned to form the thermistor 11. The thickness and shape of the thermistor 11 are as described in example 1, and are not described in detail here.
Referring to fig. 4, after the thermistor 11 is formed, a dielectric layer 102 is formed to cover the thermistor 11 and the first substrate 101, and a material of the dielectric layer 11 includes an insulating material such as silicon dioxide, silicon nitride, and the like, and may be formed by a chemical vapor deposition process. The upper surface of the dielectric layer 11 is planarized by a planarization process. The carrier substrate of this embodiment includes the first substrate 101 and the dielectric layer 102.
In another embodiment, the thermistor is formed inside a carrier substrate, and the method of forming the carrier substrate and the thermistor includes: providing a first substrate, forming a groove in the first substrate, forming the thermistor in the groove through a deposition process, forming a dielectric layer above the thermistor, wherein the upper surface of the dielectric layer is flush with the upper surface of the first substrate, and the bearing substrate comprises the first substrate and the dielectric layer.
In yet another embodiment, the upper surface of the thermistor is flush with the upper surface of the carrier substrate, and forming the carrier substrate and the thermistor includes: providing a bearing substrate, forming a groove in the bearing substrate, and forming a thermistor in the groove, wherein the upper surface of the thermistor is flush with the upper surface of the bearing substrate.
Referring to fig. 5, a thermopile structure 20 is formed on the first surface of the carrier substrate, and the composition of the thermopile structure 20 referring to embodiment 1, the method for forming the thermopile structure 20 includes: an isolation layer 26 is formed on the carrier substrate, and the isolation layer 26 is used for isolating the thermopile structure and the carrier substrate which are formed subsequently, and is used as a support layer of the thermopile structure. The material of the isolation layer 26 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride. The isolation layer 26 is formed using a deposition process or a thermal oxidation process. Forming thermocouple pairs on the isolation layer, wherein the thermocouple pairs are two thermocouple materials which are mutually and electrically connected, and the two thermocouple materials can be positioned on the same plane, arranged in parallel or overlapped up and down. An absorption layer 24 is then formed on the thermocouple pair, and the absorption layer 24 is used to absorb infrared light and convert it into heat energy. The material of the absorbent layer 24 includes: one or more of silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxycarbonitride, silicon oxynitride, boron nitride, and boron carbonitride. The formation process of the absorption layer 24 includes: a physical vapor deposition process or a chemical vapor deposition process.
Referring to fig. 6, in the present embodiment, the method further includes: a cap 30 is bonded to the thermopile structure, the cap 30 including a first cavity that surrounds the thermopile body after bonding of the cap, and the first cavity being a sealed cavity. The structure and material of the top cover 30 refer to example 1. After the top cover 30 is bonded, a heat insulation cavity 12 penetrating through the carrier substrate is formed in the carrier substrate below the thermopile main body, the projections of the thermopile main body and the heat insulation cavity in the surface direction of the carrier substrate are provided with overlapped parts, and the thermistor 11 is arranged outside the heat insulation cavity 12. In this embodiment, the first cavity and the insulating cavity are disposed opposite to each other, and the insulating cavity 12 functions as in embodiment 1. The thermopile structure 20 includes a cold junction and a hot junction, the hot junction is located above the insulating cavity, the cold junction is far away from the insulating cavity, and in the alternative, the areas surrounded by the hot junctions are all arranged in the area surrounded by the boundary of the insulating cavity 12. In this embodiment, the thermistor 11 is disposed outside the heat insulation cavity 12, and the thermistor 11 is close to the cold junction. The thermal insulation cavity 12 is used for preventing heat absorbed by the thermopile main body from being transferred to the bearing substrate, so that the temperature difference between a hot junction and a cold junction is increased, and the sensitivity is improved. The thermistor 11 is closer to the cold end of the thermopile structure 20, so that the obtained cold end temperature is more accurate, and the measurement precision of the sensor can be improved.
With continued reference to FIG. 6, in one embodiment, further comprising electrically tapping the thermistor 11 and the thermopile structure, wherein the method of electrically tapping the thermistor 11 is: a through hole is formed from the lower surface of the carrier substrate, the through hole extends to the thermistor 11, the through hole is filled with a conductive material, and a conductive column 15 is formed, the conductive column may be formed by an electroplating process, and the material may be selected from metals. And forming a conductive bump 14 connected with the conductive column at the lower end of the conductive column and the lower surface of the carrier substrate. The conductive bump 14 may be formed by a deposition process or an electroplating process, and a conductive material conventional in the art may be used. Similar to the method of electrically leading out the thermopile structure, the first connection portion 22 and the second connection portion 23 electrically connected to the electrodes of the thermopile structure are formed on the lower surface of the carrier substrate, and the first solder ball 220 electrically connected to the first connection portion 22 and the first solder ball 230 electrically connected to the second connection portion 23 are formed on the lower surface of the carrier substrate. In another embodiment, the electrical properties of either the thermistor or thermopile structure may be both routed from above, to the outside of the top cover 30, or one may be routed from above and the other from below.
Referring to fig. 7, in the present embodiment, the method for manufacturing an infrared thermopile sensor further includes: providing a lower cover plate 13, bonding the lower cover plate 13 below the bearing substrate, and enabling the lower cover plate 13 to seal the heat insulation cavity 12. The material of lower cover plate 13 refers to the material of top cap, can glue lower cover plate 13 bonding on the load-bearing substrate through dry film or structure, can set up the thickness of lower cover plate earlier and bond again, also can bond the lower cover plate that is thicker earlier on the load-bearing substrate, thins suitable thickness to lower cover plate again.
With continued reference to fig. 7, the present embodiment further includes electrical leading-out of the thermistor 11 and the thermopile structure, and the manufacturing method of electrical leading-out of the thermistor 11 includes: before the lower cover plate 13 is formed, first conductive pillars electrically connected with the thermistors are formed from the lower surface of the bearing substrate, interconnection pads are formed on the lower surface of the bearing substrate below the first conductive pillars, after the lower cover plate 13 is bonded on the lower surface of the bearing substrate, second conductive pillars are formed from the lower surface of the lower cover plate, the second conductive pillars are electrically connected with the interconnection pads, and conductive bumps 14 electrically connected with the second conductive pillars are formed on the lower surface of the lower cover plate 13. In this embodiment, the manufacturing method for leading out the electrical property of the thermopile structure includes forming a first conductive structure and a second conductive structure respectively connected to the input/output electrodes of the thermopile structure from the lower surface of the carrier substrate, forming a first interconnection pad on the lower surface of the carrier substrate below the first conductive structure, forming a second interconnection pad on the lower surface of the carrier substrate below the second conductive structure, bonding the lower cover plate 13 on the carrier substrate, and forming a third conductive structure and a fourth conductive structure on the lower surface of the lower cover plate 13, wherein the third conductive structure is electrically connected to the first interconnection pad, the fourth conductive structure is electrically connected to the second interconnection pad, and the first conductive structure, the first interconnection pad and the third conductive structure together form a first electrical connection portion 22; the second conductive structure, the second interconnection pad and the fourth conductive structure together constitute a second electrical connection 23. A first solder ball 220 electrically connected to the third conductive structure is formed on the lower surface of the lower cap plate 13, and a second solder ball 230 electrically connected to the fourth conductive structure is formed on the lower surface of the lower cap plate 13. In this embodiment, the second conductive pillar, the third conductive structure, and the fourth conductive structure have the same structure, and are formed in the same process step, thereby simplifying the process flow. In the present embodiment, the first solder balls 220, the second solder balls 230, and the conductive bumps 14 have the same structure, and the three are formed in the same process step, which simplifies the process flow. In an alternative embodiment, a passivation layer 25 is formed on the upper surface of the thermopile structure, covering the absorber layer 24, and exposing the absorber layer 24 over the insulating cavity 12 prior to electrical extraction of the thermopile structure, to absorb infrared radiation with the exposed area.
In one embodiment, the thermistor is formed on the lower surface of the carrier substrate, and the method of forming the thermistor includes: after the thermopile structure is formed, a thermistor material layer is formed on the lower surface of the bearing substrate through a deposition process, and the thermistor material layer is patterned to form the thermistor. The forming of the thermistor or the forming before/after the thermistor further includes: and forming an interconnection structure on the lower surface of the bearing substrate, wherein the interconnection structure leads out the electrical property of the thermistor.
According to the manufacturing method of the infrared thermopile sensor, the thermistor and the thermopile structure are formed on the same bearing substrate through a semiconductor process, the process flow is simplified, the batch production is realized, the thermistor can be formed before and after the thermopile structure is formed, and the process flexibility is improved.
Furthermore, the thermopile structure and the thermistor structure can be formed through a semiconductor process, and the compatibility is good.
It should be noted that, in the present specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the method embodiment, since it is basically similar to the structure embodiment, the description is simple, and the relevant points can be referred to the partial description of the method embodiment.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (20)
1. An infrared thermopile sensor, comprising:
a carrier substrate;
the thermopile structure is arranged above the bearing substrate and comprises a thermopile main body which is formed by at least one group of thermocouple pairs and is used for receiving infrared radiation;
and the thermistor is arranged on the lower surface of the bearing substrate or embedded in the bearing substrate, and is positioned on the outer side of the thermopile main body.
2. The infrared thermopile sensor of claim 1, wherein the carrier substrate includes an insulating cavity, a projection of the thermopile body and the insulating cavity in a direction of the surface of the carrier substrate is provided with an overlapping portion, and the thermistor is disposed outside the insulating cavity.
3. The infrared thermopile sensor of claim 1, wherein the thermistor has a shape comprising an S-shaped arrangement or a helically arranged strip.
4. The infrared thermopile sensor of claim 1, wherein the material of the thermistor comprises one, two or more metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc, or the like; or a layer of semiconductor material; or a semiconductor layer containing heavy metal doping, wherein the heavy metal doping ions are: one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium, and vanadium.
5. The infrared thermopile sensor of claim 1, wherein the thermopile structure comprises a cold junction and a hot junction, the hot junction being located above the insulating cavity, the cold junction being remote from the insulating cavity, the thermistor being proximate to the cold junction.
6. The infrared thermopile sensor of claim 1, further comprising a lower cover plate bonded to the underside of the carrier substrate, the lower cover plate sealing the insulating cavity.
7. The infrared thermopile sensor of claim 6, wherein the lower surface of the bottom plate has conductive bumps, and the thermistor is electrically connected to the conductive bumps through conductive posts penetrating the bottom plate.
8. The infrared thermopile sensor of claim 1, wherein the thermistor is located in the carrier substrate, and electrical properties of the thermistor are extracted from a lower surface or an upper surface of the carrier substrate through a conductive plug formed in the carrier substrate; alternatively, the first and second electrodes may be,
the thermistor is positioned on the lower surface of the bearing substrate, and an interconnection structure electrically connected with the thermistor is arranged on the lower surface of the bearing substrate.
9. The infrared thermopile sensor of claim 1, further comprising a top cap disposed over the thermopile structure and forming a first cavity with an upper surface of the thermopile structure.
10. A method of making an infrared thermopile sensor, comprising:
providing a carrier substrate, wherein the carrier substrate is provided with a first surface and a second surface which are opposite;
forming a thermopile structure on the first surface of the bearing substrate, wherein the thermopile structure comprises a thermopile body consisting of at least one group of thermocouple pairs, and the thermopile body is used for receiving infrared radiation;
and forming a thermistor in the bearing substrate or on the second surface of the bearing substrate.
11. The method of claim 10, wherein the thermistor structure is formed after the thermopile structure is formed; alternatively, after forming the thermistor structure, the thermopile structure is formed.
12. The method of claim 10, wherein forming the thermistor within the carrier substrate comprises:
providing a first substrate, forming a groove in the first substrate, forming the thermistor in the groove through a deposition process, and forming a dielectric layer above the thermistor, wherein the upper surface of the dielectric layer is flush with the upper surface of the first substrate, and the bearing substrate comprises the first substrate and the dielectric layer; or the like, or, alternatively,
providing a first substrate, forming a thermistor material layer on the upper surface of the first substrate through a deposition process, and patterning the thermistor material layer to form the thermistor;
and forming a dielectric layer to cover the thermistor and the first substrate, wherein the bearing substrate comprises the first substrate and the dielectric layer.
13. The method of manufacturing an infrared thermopile sensor of claim 10, wherein said thermistor is formed within said carrier substrate, said method further comprising: and forming a conductive plug electrically connected with the thermistor from the second surface of the bearing substrate.
14. The method of claim 10, wherein forming a thermistor on the second surface of the carrier substrate comprises:
and forming a thermistor material layer on the second surface of the bearing substrate through a deposition process, and patterning the thermistor material layer to form the thermistor.
15. The method of claim 10, wherein the thermistor is formed on the second surface of the carrier substrate, and the step of forming the thermistor or after forming the thermistor further comprises: and forming an interconnection structure on the second surface of the bearing substrate, wherein the interconnection structure leads out the electrical property of the thermistor.
16. The method of claim 10, wherein the thermistor material comprises one, two or more metals or metal oxides of aluminum, copper, nickel, chromium, iron, titanium, gold, silver, platinum, manganese, cobalt, zinc, etc.; or a layer of semiconductor material; or a semiconductor layer containing heavy metal doping, wherein the heavy metal doping ions are: one or more of aluminum, copper, gold, platinum, silver, nickel, iron, manganese, molybdenum, tungsten, titanium, zinc, mercury, cadmium, chromium, and vanadium.
17. The method of claim 10, wherein the thermistor has a shape including a fold line or a bar.
18. The method of manufacturing an infrared thermopile sensor of claim 10, further comprising:
the thermal reactor comprises a thermal reactor main body, a carrying substrate and a thermistor, wherein a thermal insulation cavity penetrating through the carrying substrate is formed in the carrying substrate below the thermal reactor main body, the thermal reactor main body and the thermal insulation cavity are provided with overlapped parts in projection in the surface direction of the carrying substrate, and the thermistor is arranged outside the thermal insulation cavity.
19. The method of manufacturing an infrared thermopile sensor of claim 18, further comprising: and providing a lower cover plate, bonding the lower cover plate below the bearing substrate, and enabling the lower cover plate to seal the heat insulation cavity.
20. The method of manufacturing an infrared thermopile sensor of claim 19, further comprising: after the lower cover plate is formed, a conductive column penetrating through the lower cover plate and connected to the thermistor is formed, and a conductive bump electrically connected with the conductive column is formed on the lower surface of the lower cover plate.
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