CN112616237B - Method, system and readable medium for generating quasi-sine wave pulse electron beam - Google Patents
Method, system and readable medium for generating quasi-sine wave pulse electron beam Download PDFInfo
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- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
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Abstract
The application relates to a method, a system and a readable medium for generating a quasi-sine wave pulsed electron beam, comprising the steps of: s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring; s2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam group; s3, acquiring a waveform diagram of an ion beam in the ion storage ring; s4, judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, if not, adjusting the frequency of the sine wave voltage, repeating the steps until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained, and outputting. The interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring is changed, so that the technical problems of ion beam loss and short storage life of the ion beam are solved.
Description
Technical Field
The application relates to a method, a system and a readable medium for generating quasi-sine wave pulse electron beams, belonging to the technical field of accelerator ion beam emission.
Background
The ion storage ring is an accelerator device that improves ion beam intensity, energy and beam quality and stores an ion beam for a long period of time. The electron cooling device is a key device for improving the beam quality of the ion beam in the ion storage ring. The electron cooling device can reduce the transverse emittance of the ion beam in the storage ring, and reduce the transverse size and divergence angle of the ion beam; meanwhile, the longitudinal momentum dispersion of the ion beam in the storage ring can be reduced, and the speed difference between ions in the ion beam in the storage ring is reduced, so that the longitudinal beam cluster length of the ion beam is reduced. However, the electron cooling device generates unstable beam current when interacting with the ion storage ring, and the prior art mainly adopts an asymmetric pulse voltage modulation direct current electron beam method to inhibit the beam current.
The waveform of the asymmetric pulse voltage is shown in figure 1, and the positive pulse p in the pulse voltage sequence 1 ，p 2 ……p n Turning on an electron cooling device, emitting electron beam, and negative pulse n 1 ，n 2 ……n n The electronic cooling device is turned off. In the pulsed electron beam emitted by the electron cooling device, the pulsed electron beam is uniformly distributed, and the amplitude of each pulse voltage for generating the pulsed electron beam is constant at each time within the time domain length of the pulse, i.e. from tp in the time domain 0 、tp 1 .. n The pulse voltage amplitude at each instant of (a) is equal to +vp 1 Since the electron beam intensity is positively correlated with the pulse voltage amplitude, the electron beam intensity generated at each moment is equal, and the impact force of the electron beam mass on the ion beam at each moment is also equal. Since the ion beam in the ion storage ring has a gaussian distribution, the effect of ion beam lifetime due to ion beam edge ion loss cannot be overcome when the uniformly distributed pulsed electron beam interacts with the gaussian distributed ion beam.
Disclosure of Invention
In view of the foregoing, it is an object of the present application to provide a method, system and readable medium for generating a quasi-sine wave pulsed electron beam that analyzes the effect of the electron beam on the storage life of the ion beam in an ion storage ring by utilizing the monotonically varying characteristic of the impact force of the electron beam on the ion beam at each instant.
In order to achieve the above purpose, the present application adopts the following technical scheme: a method of generating a quasi-sine wave pulsed electron beam, comprising the steps of: s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring; s2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam group; s3, acquiring a waveform diagram of an ion beam in the ion storage ring; and S4, judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, if so, outputting the current quasi-sine wave pulse electron beam cluster, otherwise, returning to the step S1, adjusting the frequency of sine wave voltage, and repeating the steps S1-S4 until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained and output.
Further, for the cyclotron frequency f of the ion beam in the ion storage ring in S1 i The method is obtained by adopting the following formula:
beta is relativistic factor, C is light speed 3X 10 8 m/s, L is the circumference of the storage ring.
Further, the specific process of generating the quasi-sine wave pulse electron beam cluster in S2 is as follows: triggering a sine wave generating circuit corresponding to the frequency obtained in the step S1, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam group.
Further, the length and the current intensity of the sine wave pulse electron beam cluster are adjusted by setting the threshold value of the sine wave voltage, and when the frequency of the sine wave voltage exceeds a preset threshold value, the quasi-sine wave pulse electron beam cluster is output.
Further, the lower the threshold, the longer the length of the electron beam cluster, the lower the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the higher the current intensity.
The application discloses a system for generating quasi-sine wave pulse electron beams, which comprises: the frequency calculation module is used for calculating the frequency of the sine wave voltage for modulating the electron beam in the electron cooling device according to the convolution frequency of the ion beam in the ion storage ring; the electron beam cluster generation module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculation module to generate a quasi-sine wave pulse electron beam cluster; an ion beam waveform acquisition module for acquiring a waveform diagram of an ion beam in the ion storage ring; and the matching adjustment module is used for judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, outputting the current quasi-sine wave pulse electron beam cluster if yes, returning to the frequency calculation module, adjusting the frequency of the sine wave voltage until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained, and outputting the quasi-sine wave pulse electron beam cluster.
Further, the specific process of generating the quasi-sine wave pulse electron beam cluster in the electron beam cluster generating module is as follows: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculating module, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam group.
Further, the length and the current intensity of the sine wave pulse electron beam cluster are adjusted by setting the threshold value of the sine wave voltage, and when the frequency of the sine wave voltage exceeds a preset threshold value, the quasi-sine wave pulse electron beam cluster is output.
Further, the lower the threshold, the longer the length of the electron beam cluster, and the higher the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the lower the current intensity.
The application also discloses a computer readable storage medium, the computer readable storage medium stores a computer program, and the computer program is executed by a processor to realize the method for generating the quasi-sine wave pulse electron beam.
Due to the adoption of the technical scheme, the application has the following advantages:
1. the application modulates the continuous direct current electron beam into a series of quasi-sine wave distributed pulse electron beam clusters through the direct current electron beam generated by the high-frequency high-voltage sine wave voltage modulation electron cooling device, changes the shape distribution and the current intensity of the extracted electron beam, and analyzes the influence of the electron beam on the storage life of the ion beam in the storage ring by utilizing the characteristic research that the impact force of the electron beam cluster on the ion beam has monotonic change at each moment when the electron beam acts on the ion beam.
2. The application makes the pulse electron beam form of quasi-sine wave distribution generated by high frequency high voltage sine wave voltage closely match with the ion beam form of Gaussian distribution, changes the interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring, explores the motion rule of the ion beam group in the storage ring, and solves the technical problems of ion beam loss and short storage life of the ion beam.
Drawings
FIG. 1 is a waveform diagram of an asymmetric pulse voltage in the prior art;
FIG. 2 is a waveform diagram of the ensemble of sine wave voltages in an embodiment of the present application;
FIG. 3 is a waveform diagram of a sine wave voltage in the range of 0-2π in one embodiment of this application;
FIG. 4 is a graph showing a correspondence between a threshold value of a sine wave voltage and an electron beam current according to an embodiment of the present application, wherein FIG. 4 (a) is a waveform diagram of the sine wave voltage, and a line segment CD is the threshold value of the sine wave voltage; fig. 4 (b) is the intensity of the corresponding beam current;
FIG. 5 is a graph showing a relationship between a threshold value of a sine wave voltage and an electron beam current according to another embodiment of the present application, wherein FIG. 5 (a) is a waveform diagram of the sine wave voltage, and a line segment CD is the threshold value of the sine wave voltage; fig. 5 (b) is the intensity of the corresponding beam current;
FIG. 6 is a time domain waveform diagram of a quasi-sine wave pulsed electron beam produced in one embodiment of the present application;
FIG. 7 is a graph showing a comparison of a pulsed electron beam waveform and an ion beam waveform of a quasi-sinusoidal distribution in accordance with an embodiment of the present application;
fig. 8 is a graph showing a comparison of a quasi-sinusoidal pulse electron beam waveform and an ion beam waveform after sinusoidal voltage parameter adjustment in an embodiment of the present application.
Detailed Description
The present application will be described in detail with reference to specific examples thereof in order to better understand the technical direction of the present application by those skilled in the art. It should be understood, however, that the detailed description is presented only to provide a better understanding of the application, and should not be taken to limit the application. In the description of the present application, it is to be understood that the terminology used is for the purpose of description only and is not to be interpreted as indicating or implying relative importance.
The application adopts high-frequency high-voltage sine wave voltage to modulate the direct current electron beam into a quasi-sine wave pulse electron beam group, compares the waveform of the generated quasi-sine wave distributed pulse electron beam group with the waveform of the ion beam, and adjusts the parameters of the sine wave voltage according to the comparison result, thereby obtaining the quasi-sine wave pulse electron beam group which is matched with the waveform of the ion beam. The method is characterized in that the effect of the electron beam on the ion beam is researched by applying a weaker impact action on the edge of the ion beam distribution and applying a stronger impact action on the center of the ion beam distribution through the electron beam group, and the inherent mechanism of the ion beam group loss is explored, so that the effects of reducing the ion beam loss and prolonging the service life of the ion beam in an ion storage ring are achieved.
The application designs a high-frequency high-voltage sine wave modulation generator according to ion beam flows with different energies and different convolution frequencies in an ion storage ring, and can realize the output of high-voltage sine wave voltages with different frequencies and amplitudes by adjusting the frequency or the amplitude of a trigger driving signal of the high-frequency high-voltage sine wave generator, and the sine wave voltages are applied to an electron gun control electrode to modulate a direct-current electron beam into a series of discontinuous pulse electron beam groups with quasi-sine wave distribution.
Example 1
The embodiment discloses a method for generating quasi-sine wave pulse electron beams, which comprises the following steps:
s1, calculating the frequency of a sine wave voltage for modulating the electron beam in the electron cooling device according to the convolution frequency of the ion beam in the ion storage ring.
The cyclotron frequency f of the ion beam in the ion storage ring i The method is obtained by adopting the following formula:
wherein beta is relativistic factor, C is light speed 3×10 8 m/s, L is the circumference of the storage ring.
For example, if the storage ring circumference of an ion storage ring is 161 meters, the ion beam cyclotron frequency at an energy of 7MeV/u is 0.227MHz. Because the energy of the ions injected into the ion storage ring is different, a distribution interval exists between the convolution frequency, and the electron beams with the convolution frequency of 0.2 MHz-1.6 MHz can form effective longitudinal impact on the ion beams with quasi-sine wave distribution.
S2, adjusting the electron beam by adopting the sine wave voltage corresponding to the frequency obtained in the step S1, and generating a quasi-sine wave pulse electron beam cluster.
The specific process for generating the quasi-sine wave pulse electron beam mass is as follows: triggering a sine wave generating circuit corresponding to the frequency obtained in the step S1, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam group.
FIG. 2 is a waveform diagram of the ensemble of sine wave voltages in an embodiment of the present application; FIG. 3 is a waveform diagram of a sine wave voltage in the range of 0-2π in one embodiment of this application. As shown in FIG. 2, the sine wave voltage corresponding to the sine wave phase from 0 to pi increases from 0 to the maximum value and decreases from the maximum value to 0, and the sine wave voltage is positive half-axis waveform p 1 ，p 2 ……p n Starting the electron gun, and generating a negative half-shaft waveform n 1 ，n 2 ……n n The electron gun is turned off. As shown in FIG. 3, from 0 to pi, the corresponding sine wave voltage waveform is at the positive half axis, and the maximum value of the sine wave voltage at the moment from 0 to pi/2 is +vp n Then from the maximum value +vp n 0 when pi is reduced, which is the period of starting the electron gun; and when pi-2 pi, the corresponding sine wave voltage waveform is in a negative half axis, and the period of closing the electron gun is the period.
One period t=1/f of the sine wave voltage:
(1) 0-pi/2 is the rising phase of sine wave voltage:
as shown in FIG. 3, from tp 0 .. n The sine wave voltage rises from 0 to a maximum value +vp according to a sine wave curve n The electron beam intensity generated by the sine wave voltage also rises from 0 to the maximum value according to the sine wave curve, and the impact acting force of the electron beam on the ion beam also rises from 0 to the maximum value according to the sine wave curve.
(2) Pi/2-pi is the sine wave voltage drop phase:
as shown in FIG. 3, from tp n .. m The sine wave voltage decreases from the maximum value +vp according to the sine wave curve n The electron beam intensity generated by the sine wave voltage is also reduced to 0 from the maximum value according to the sine wave curve, and the impact acting force of the electron beam on the ion beam is also reduced to 0 from the maximum value according to the sine wave curve.
(3) Pi-2 pi, sine wave voltage turns off the electron gun at the negative half axis.
Because the impact acting force of each electron beam group on the ion beam also changes according to the sine wave shape, the electron beam impacts the ion beam in a current intensity gradual change mode, when the quasi-sine wave pulse electron beam is matched with the Gaussian distribution form of the ion beam in the longitudinal direction, weaker action is generated at the edge of the ion beam distribution, stronger action is generated at the center of the ion beam distribution, and uniform, symmetrical and concentrated impact effect is generated on the ion beam. The characteristic that the pulse electron beam group with quasi-sine wave distribution generated by high-frequency high-voltage sine wave voltage has time-varying impact on ions at each moment is utilized to study the loss condition and the storage life problem of the ion beam in the storage ring.
The length of the pulsed electron beam cluster and the current intensity of the electron beam cluster with the quasi-sine wave distribution are led out to be related to the threshold value of the sine wave voltage, so that the length and the current intensity of the pulsed electron beam cluster can be adjusted by adjusting the threshold value of the sine wave voltage. And outputting a quasi-sine wave pulse electron beam cluster when the frequency of the sine wave voltage exceeds a preset threshold value.
FIG. 4 is a graph showing a correspondence between a threshold value of a sine wave voltage and an electron beam current according to an embodiment of the present application, wherein FIG. 4 (a) is a waveform diagram of the sine wave voltage, and a line segment CD is the threshold value of the sine wave voltage; fig. 4 (b) is the intensity of the corresponding beam current. Wherein, when the sine wave voltage threshold is U t1 When the sine wave voltage starts the electron gun at the point A and continuously rises to be greater than the threshold voltage U at the point C t1 After that, electron beam is generated, and rises to the maximum value along the sine wave curve and then fallsTo point D, less than threshold voltage U t1 The rear electron beam is cut off, and the electron gun is turned off when the electron beam is continuously lowered to the point B; the length of the extracted pulse electron beam group is deltat 1, and the maximum value of the pulse electron beam current intensity is I t1 。
FIG. 5 is a graph showing a relationship between a threshold value of a sine wave voltage and an electron beam current according to another embodiment of the present application, wherein FIG. 5 (a) is a waveform diagram of the sine wave voltage, and a line segment CD is the threshold value of the sine wave voltage; fig. 5 (b) is the intensity of the corresponding beam current. Wherein, when the sine wave voltage threshold is U t2 When the high-frequency sine wave voltage is at the point A, the electron gun is started to continuously rise to pass through the point C and is larger than the threshold voltage U t2 The electron beam is led out after rising to the maximum value along the sine wave curve and then falling to the point D, which is smaller than the threshold voltage U t2 Stopping the rear electron beam, and continuing to lower to the point B to close the electron gun; the length of the extracted pulse electron beam group is delta t2, and the maximum value of the pulse electron beam current is I t2 。
Set U t1 <U t2 ，U t1 The length of the generated electron beam cluster is delta t1, and the electron beam current is I t1 ；U t2 The length of the generated electron beam cluster is delta t2, and the current is I t2 Low threshold voltage U t1 When the length of each electron beam cluster is long, the electron beam current generated by sine wave voltage is strong; high threshold voltage U t2 When each electron beam cluster is short in length, the electron beam intensity generated by the sine wave voltage is small. I.e. the lower the threshold, the longer the length of the electron beam mass and the higher the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the lower the current intensity. The length and intensity of the electron beam mass can be changed along with the change of the threshold value when the sine wave voltage threshold value is regulated.
As shown in fig. 6, a time domain waveform diagram of a series of discrete quasi-sine wave pulse electron beam clusters modulated by a sine wave voltage with a dc electron beam is shown.
S3, acquiring a waveform diagram of the ion beam in the ion storage ring.
And S4, judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, if so, outputting the current quasi-sine wave pulse electron beam cluster, otherwise, returning to the step S1, adjusting the frequency of sine wave voltage, and repeating the steps S1-S4 until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained and output.
The sine wave voltage frequency and amplitude parameters in the step S1 are changed in a scanning mode, so that the quasi-sine wave distribution form of the electron beam is closely matched with the Gaussian distribution form of the ion beam, and the uniform, symmetrical and concentrated impact effect of the pulsed electron beam with the quasi-sine wave distribution led out by the electron gun in the electron cooling device on the Gaussian distribution ion beam in the storage ring is achieved.
The ion beam with specific energy is set as FWHM-i, the half-width of the ion beam is set as FWHM-i, the distribution in the ion storage ring is certain, the sine wave voltage waveform has the characteristic similar to Gaussian distribution, the direct current electron beam is modulated into quasi-sine wave pulse electron beam groups by adopting high-frequency high-voltage sine waves, and the high-frequency high-voltage sine wave voltage parameters are changed to enable the electron beam distribution form to be closely matched with the ion beam distribution form, so that uniform, symmetrical and concentrated action effects are generated on the ion beam.
As shown in fig. 7, the envelope of the quasi-sinusoidal wave electron beam with the full width at half maximum FWHM-e is larger than the envelope of the gaussian ion beam, i.e. the full width at half maximum of the electron beam is larger than the full width at half maximum of the ion beam, FWHM-e > FWHM-i, the waveform of the quasi-sinusoidal wave pulse electron beam is in a non-matching state with the waveform of the gaussian ion beam, at this time, step S1 is returned to adjust the parameters of the sinusoidal wave voltage, so that the distribution of the quasi-sinusoidal wave pulse electron beam is continuously similar to the gaussian ion beam, and the waveform diagram of the finally obtained quasi-sinusoidal wave pulse electron beam is as shown in fig. 8, and the waveforms of the quasi-sinusoidal wave pulse electron beam and the gaussian ion beam are substantially matched, and the half widths of the two are substantially the same.
The above embodiments describe the characteristics of the sine wave voltage waveform output by the high-frequency high-voltage sine wave generator circuit and the pulse electron beam signal waveform extracted by the electron gun, and the parameters of the listed examples can be changed according to the experimental test requirements.
Example two
Based on the same inventive concept, the present embodiment discloses a system for generating a quasi-sine wave pulse electron beam, comprising:
the frequency calculation module is used for calculating the frequency of the sine wave voltage for modulating the electron beam in the electron cooling device according to the convolution frequency of the ion beam in the ion storage ring;
the electron beam cluster generation module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculation module to generate a quasi-sine wave pulse electron beam cluster;
an ion beam waveform acquisition module for acquiring a waveform diagram of an ion beam in the ion storage ring;
and the matching adjustment module is used for judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, outputting the current quasi-sine wave pulse electron beam cluster if yes, returning to the frequency calculation module, adjusting the frequency of the sine wave voltage until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained, and outputting the quasi-sine wave pulse electron beam cluster.
The specific process for generating the quasi-sine wave pulse electron beam cluster in the electron beam cluster generating module comprises the following steps: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculating module, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam group.
The length and the current intensity of the sine wave pulse electron beam cluster can be adjusted by setting a threshold value of the sine wave voltage, and when the frequency of the sine wave voltage exceeds a preset threshold value, the quasi-sine wave pulse electron beam cluster is output. The lower the threshold, the longer the length of the electron beam cluster, the higher the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the lower the current intensity.
Example III
Based on the same inventive concept, the present embodiment discloses a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor to implement the method of generating a quasi-sine wave pulsed electron beam of any of the first embodiments.
According to the application, the electron beam clusters act on the ion beam at any time in the time domain with different impact forces, and the influence of the electron beam on the storage life of the ion beam in the storage ring is analyzed by utilizing the characteristic research that each time of the electron beam clusters has monotonic change on the impact force of the ion beam. The application changes the interaction mode of the electron beam in the electron cooling device and the ion beam in the storage ring by closely matching the pulse electron beam shape of quasi-sine wave distribution with the ion beam shape of Gaussian distribution, explores the motion rule of the ion beam group in the storage ring, thereby realizing the effects of reducing the ion beam loss and prolonging the storage life of the ion beam.
Finally, it should be noted that: the above embodiments are only for illustrating the technical aspects of the present application and not for limiting the same, and although the present application has been described in detail with reference to the above embodiments, it should be understood by those of ordinary skill in the art that: modifications and equivalents may be made to the specific embodiments of the application without departing from the spirit and scope of the application, which is intended to be covered by the claims. The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present application. Therefore, the protection scope of the application should be as defined in the claims.
Claims (8)
1. A method of generating a quasi-sine wave pulsed electron beam, comprising the steps of:
s1, calculating the frequency of sine wave voltage for modulating the electron beam in the electron cooling device according to the cyclotron frequency of the ion beam in the ion storage ring;
s2, adjusting the electron beam by adopting sine wave voltage corresponding to the frequency obtained in the step S1 to generate a quasi-sine wave pulse electron beam group;
s3, acquiring a waveform diagram of an ion beam in the ion storage ring;
s4, judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, if so, outputting the current quasi-sine wave pulse electron beam cluster, otherwise, returning to the step S1, adjusting the frequency of the sine wave voltage, and repeating the steps S1-S4 until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained and output;
and adjusting the length and the current intensity of the quasi-sine wave pulse electron beam cluster by setting the threshold value of the sine wave voltage, and outputting the quasi-sine wave pulse electron beam cluster when the frequency of the sine wave voltage exceeds a preset threshold value.
2. The method of generating a quasi-sine wave pulsed electron beam of claim 1, wherein for a cyclotron frequency f of an ion beam in said S1 ion storage ring i The method is obtained by adopting the following formula:
wherein beta is relativistic factor, C is light speed 3×10 8 m/s, L is the circumference of the storage ring.
3. The method for generating a quasi-sine wave pulse electron beam according to claim 1, wherein the specific process of generating a quasi-sine wave pulse electron beam cluster in S2 is: triggering a sine wave generating circuit corresponding to the frequency obtained in the step S1, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam cluster.
4. A method of generating a quasi-sine wave pulsed electron beam according to claim 3, wherein the lower the threshold, the longer the length of the electron beam mass, the higher the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the lower the current intensity.
5. A system for generating a quasi-sine wave pulsed electron beam, comprising:
the frequency calculation module is used for calculating the frequency of the sine wave voltage for modulating the electron beam in the electron cooling device according to the convolution frequency of the ion beam in the ion storage ring;
the electron beam cluster generation module is used for adjusting the electron beam according to the sine wave voltage corresponding to the frequency obtained in the frequency calculation module to generate a quasi-sine wave pulse electron beam cluster;
an ion beam waveform acquisition module for acquiring a waveform diagram of an ion beam in the ion storage ring;
the matching adjustment module is used for judging whether the waveform of the quasi-sine wave pulse electron beam cluster is matched with the waveform of the ion beam, if yes, outputting the current quasi-sine wave pulse electron beam cluster, if no, returning to the frequency calculation module, adjusting the frequency of the sine wave voltage until the quasi-sine wave pulse electron beam cluster matched with the waveform of the ion beam is obtained, and outputting;
and adjusting the length and the current intensity of the quasi-sine wave pulse electron beam cluster by setting the threshold value of the sine wave voltage, and outputting the quasi-sine wave pulse electron beam cluster when the frequency of the sine wave voltage exceeds a preset threshold value.
6. The system for generating a quasi-sinusoidal pulsed electron beam of claim 5, wherein the generating of the quasi-sinusoidal pulsed electron beam bolus in the bolus generating module is performed by: and triggering a sine wave generating circuit corresponding to the frequency obtained in the frequency calculating module, and applying sine wave voltage with the frequency to a control electrode of an electron gun of the electron cooling device to generate a quasi-sine wave pulse electron beam cluster.
7. The system for generating a quasi-sine wave pulsed electron beam of claim 6, wherein the lower the threshold, the longer the length of the electron beam mass, the higher the current intensity; the higher the threshold, the shorter the length of the electron beam cluster and the lower the current intensity.
8. A computer readable storage medium having stored thereon a computer program for execution by a processor to implement the method of generating a quasi-sine wave pulsed electron beam of any one of claims 1-4.
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