CN112616205A - Environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures and preparation method thereof - Google Patents
Environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures and preparation method thereof Download PDFInfo
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- CN112616205A CN112616205A CN202011492288.0A CN202011492288A CN112616205A CN 112616205 A CN112616205 A CN 112616205A CN 202011492288 A CN202011492288 A CN 202011492288A CN 112616205 A CN112616205 A CN 112616205A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 56
- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims description 49
- 230000008020 evaporation Effects 0.000 claims description 47
- 238000000151 deposition Methods 0.000 claims description 35
- 238000001771 vacuum deposition Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 10
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 20
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 59
- 229910001220 stainless steel Inorganic materials 0.000 description 28
- 239000010935 stainless steel Substances 0.000 description 28
- 238000005485 electric heating Methods 0.000 description 18
- 238000009826 distribution Methods 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920003319 Araldite® Polymers 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 238000007718 adhesive strength test Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/16—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/262—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an insulated metal plate
Abstract
The invention relates to an environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures and a preparation method thereof, in particular to the environment-friendly green semiconductor electrothermal film which comprises the following components in parts by weight: the tin antimony oxide electrothermal film comprises a metal base material, a tin antimony oxide electrothermal film and a silicon dioxide dielectric layer between the metal base material and the tin antimony oxide electrothermal film; wherein, the metal base material can be processed into the metal base material with a convex structure or a concave structure according to the appearance structure of the heated member. The adhesive force between the electrothermal film and the substrate is greatly improved, the electrothermal film is not easy to peel even if the temperature is changed continuously, and the service life is greatly prolonged; in addition, through selecting for use the metal as the substrate, can process according to the appearance by the heating member to improve the laminating degree of electric heat membrane and by the heating member, improve electric heat conversion energy efficiency ratio.
Description
Technical Field
The invention relates to the technical field of electric heating materials, in particular to an environment-friendly green semiconductor electric heating film suitable for heated parts with different appearance structures and a preparation method thereof.
Background
At present, on occasions needing heating, modes such as resistance wire heating, electromagnetic radiation heating and the like are common. Generally, resistance wire heating is a heating mode for adjusting heating power by changing a resistance value, the heating mode has the defects of low thermal efficiency, low safety coefficient, high later maintenance cost, short service life and the like, and the conversion rate of converting electric energy into heat energy is not more than 56%. Electromagnetic radiation heating utilizes radiant energy for heating, and the problems of electromagnetic radiation damage and high cost exist.
The electrothermal conversion efficiency of the electrothermal film is high, the energy-saving effect is obvious, and people pay attention to the field of electric heating. The conventional semiconductor electrothermal film (SEHF for short) generally comprises: the heat-generating film comprises a substrate, a heat-generating film and a bonding material positioned between the substrate and the heat-generating film. The substrate is generally made of an insulating material such as ceramic, quartz glass, or microcrystalline glass. In the actual use process, the heated parts have various appearance structures, ceramics, quartz glass, microcrystalline glass and the like belong to materials which are difficult to process, generally only thin-film electrothermal films of planar heat sources can be prepared, and the electrothermal films and the heated parts are difficult to be well jointed; in addition, the adhesive form is changed along with the temperature, so that the risk of peeling off and falling off of the electric heating film is increased.
Therefore, how to improve the joint degree of the semiconductor electrothermal film and a processed workpiece so as to improve the electrothermal conversion energy efficiency ratio and improve the bonding strength between the electrothermal film and the substrate so as to better meet the national energy-saving and environment-friendly requirements is a technical problem which needs to be solved by technical personnel in the field at present.
Disclosure of Invention
The invention aims to provide an environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the above object, an object of the present invention is to provide an environment-friendly green semiconductor electrothermal film suitable for heated parts with different shapes, the environment-friendly green semiconductor electrothermal film comprising: the tin antimony oxide electrothermal film comprises a metal base material, a tin antimony oxide electrothermal film and a silicon dioxide dielectric layer between the metal base material and the tin antimony oxide electrothermal film; wherein, the metal base material can be processed into the metal base material with a convex structure or a concave structure according to the appearance structure of the heated member.
Further, the heated part outer shape comprises one or a combination of a convex part or a concave part, the convex structure of the metal substrate corresponds to the concave part of the heated part, and the convex structure of the metal substrate corresponds to the convex part of the heated part.
Further, the convex structures or the concave structures are specifically any one or combination of hemispherical, pyramidal, semi-ellipsoidal, square and trapezoidal convex structures.
Further, the metal substrate is selected from any one of stainless steel, aluminum, copper, titanium and alloys thereof.
Furthermore, the silicon dioxide dielectric layer and the tin antimony oxide layer are sequentially and uniformly paved on the metal base material with the convex structure or the concave structure.
Further, the heated part appearance includes bellying or pit portion and flattening, the metal substrate of taking protruding structure or taking pit structure includes first arch or pit structure and second arch or pit structure, first arch or pit structure and the bellying or the pit appearance one-to-one of heated part, second arch or pit structure and the flattening of heated part one-to-one.
Further, the second bump or pit structure has a smaller size than the first bump or pit structure.
Furthermore, the mass ratio of tin dioxide to antimony trioxide in the tin antimony oxide electrothermal film is 1:1 to 1: 1.5.
The invention also aims to provide a preparation method of the environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures, which specifically comprises the following steps:
(1) the method comprises the following steps of pretreating a metal base material, performing punch forming treatment on the metal base material according to the shape structure of a heated member to obtain the metal base material with a convex structure or a concave structure, and performing ultrasonic cleaning on the metal base material with the convex structure or the concave structure to remove surface dirt.
(2) And (2) depositing a silicon dioxide medium layer, putting the metal base material obtained in the step (1) on a sample platform of a vacuum coating machine, taking silicon dioxide as an evaporation source, closing the evaporation coating device, vacuumizing, then opening the evaporation coating device, and evaporating a silicon dioxide medium layer on the surface of the metal base material with a convex structure or a concave structure.
(3) And (3) depositing a tin antimony oxide layer, adjusting a corresponding evaporation process by taking tin antimony oxide as an evaporation source, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), so as to obtain the environment-friendly green semiconductor electrothermal film.
Further, the specific evaporation process in the step (3) is as follows: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working air pressure is 0.5Pa, tin antimony oxide is used as an evaporation source, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled at
According to the invention, by adopting the structural form of the metal base material with the convex structure or the concave structure, the dielectric film and the tin antimony oxide layer, on one hand, the metal base material is more convenient to process compared with the materials such as ceramics, glass and the like in the prior art, and can be processed into a specific shape according to the appearance structure of the heated part, so that the electric heating film and the heated part are well jointed, and the electric heating conversion energy efficiency ratio is improved. On the other hand, the invention adopts the vacuum evaporation method for deposition, does not need to adopt bonding materials, and the protruding structure also greatly improves the adhesive force of the electrothermal film and the matrix, and the electrothermal film is not easy to peel off even if the temperature is changed continuously, thereby greatly improving the service life.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor electrothermal film of the present invention.
FIG. 2 is a schematic view showing the process of preparing the electrothermal semiconductor film of the present invention.
Fig. 3 is a schematic structural diagram of another semiconductor electrothermal film of the present invention.
Fig. 4 is a graph comparing the surface power factors of the heated members of the semiconductor electrothermal films of the embodiment 1 and the comparative example 1 of the present invention.
Fig. 5 is a comparison graph of the surface temperature distribution of the heated member of the semiconductor electrothermal film of the embodiment 1 and the embodiment 4 of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The environment-friendly green semiconductor electrothermal film comprises a three-layer structure, namely a metal substrate layer 1, a silicon dioxide dielectric layer 2 and a tin antimony oxide layer 3 in sequence. Wherein the metal substrate layer 1 can be processed into a metal substrate with a convex structure or a concave structure according to the shape structure of the heated member. Referring to fig. 1, one specific structure form of the environment-friendly green semiconductor electrothermal film is shown. Specifically, when the heated member 4 has a shape similar to a shape with a semicircular pit, the metal substrate of the present invention can be formed into a structure similar to the structure with a semicircular bump shown in fig. 1 by stamping, and the tin antimony oxide electrothermal film obtained by subsequent vacuum vapor deposition inherits the semicircular bump structure of the metal substrate, so that the semiconductor electrothermal film and the heated member 4 can be better attached.
The metal base material is selected from stainless steel, aluminum, copper, titanium and alloy thereof and other materials which are easy to process and have good thermal conductivity, on one hand, the metal base material can play a good supporting role for the semiconductor electrothermal film, is easier to process and form compared with the traditional base materials such as ceramic glass and the like, is not limited by the shape of the base material, and is suitable for various shape structures of heated parts to be heated. On the other hand, the electric heating film is provided with the convex or concave pit structure, so that local heat distribution is possibly uneven, the good heat conductivity of the metal substrate can improve the uniformity of the overall heat distribution of the electric heating film, the uneven heat distribution condition can be greatly relieved, and the uniform temperature condition can be adjusted by adjusting the distribution condition of the convex or concave pit structure on the surface of the metal substrate.
As a further improvement of the present invention, the metal substrate with a raised structure or a recessed structure further includes a first raised or recessed structure and a second raised or recessed structure, wherein the first raised or recessed structure corresponds to the raised or recessed shape of the heated member, and the second raised or recessed structure corresponds to the flat portion of the heated member. Further, the protruding or recessed size of the first protruding or recessed structure is larger than the protruding or recessed size of the second protruding or recessed structure, specifically, the size of the first protruding or recessed structure is determined according to the shape of the heated member, so as to ensure the sufficient fit between the electric heating film and the heated member. The size of the second protrusion or pit structure can be adjusted within a certain range, and on the basis that the electric heating film is not influenced to be attached to the heated member, the size of the second protrusion or pit structure can be properly increased to ensure a more uniform heating effect. Preferably, the number of the second raised or recessed structures is greater than that of the first raised or recessed structures, and the greater the number of the second raised or recessed structures, the more favorable the heating uniformity without affecting the bonding.
As an embodiment of the present invention, as shown in fig. 3, a metal substrate includes a first convex structure 5 and a second convex structure 6, and correspondingly, a heated member includes a concave portion and a flat portion, as shown in the figure, the first convex structure 5 corresponds to the concave portion of the heated member, and the second convex structure 6 corresponds to the flat portion of the heated member. The protruding or concave size of the second protruding structures 6 is smaller than that of the first protruding structures 5, so that the heating uniformity is improved on the basis that the attaching of the electric heating film and the heated member is not influenced, and the second protruding structures 6 are uniformly distributed on the corresponding part of the metal substrate corresponding to the flat part of the heated member and meet certain distribution quantity.
Referring to fig. 2, the process for preparing the semiconductor electrothermal film of the present invention is further described, and fig. 2 is a schematic flow chart of the preparation process of the semiconductor electrothermal film of the present invention, wherein, first, the planar plate-shaped metal substrate is subjected to punch forming in steps (1) - (2), and according to the appearance of different heated parts, a convex or concave structure is correspondingly punched on the surface of the metal substrate. Fig. 2 shows only a semicircular convex structure as an example, but of course, the convex or concave structure of the present invention is not limited thereto, and it should be appropriately adjusted and matched according to the configuration of the heated member. When the heated part comprises a convex part outside, the corresponding part of the metal substrate is processed into a corresponding concave structure, and when the heated part comprises a concave part outside, the corresponding part of the metal substrate is processed into a corresponding convex structure. When the heated part comprises both the convex part and the concave part outside, the corresponding parts of the metal substrate are processed into a convex structure and a concave structure correspondingly. Preferably, when the heated member includes a flat portion on the outside thereof, a projection or a recess structure having a smaller size may be formed on a corresponding portion of the metal substrate. And (4) depositing a silicon dioxide dielectric layer on the surface of the metal base material with the bulge or pit structure in the step (3) to play a role in insulation and heat insulation between the electric heating film and the metal base body. And (4) further depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer to serve as a main heating part of the electrothermal film.
The excellent effects of the semiconductor electrothermal film of the present invention will be described with reference to specific embodiments.
Example 1
The embodiment provides an environmental protection green semiconductor electrothermal film suitable for heating parts with different appearance structures, which specifically comprises the following steps:
(1) when the shape of the heated member comprises a concave part structure, a stainless steel plate is selected as a metal base material, and the stainless steel plate is subjected to punch forming treatment to obtain the stainless steel base material with the convex structure. Wherein, the convex structure of the stainless steel plate corresponds to the concave part structure of the shape of the heated member one by one.
(2) And (2) depositing a silicon dioxide medium layer, putting the stainless steel base material obtained in the step (1) on a sample platform of a vacuum coating machine, adopting high-purity quartz glass as a vapor deposition source, closing the evaporation coating device, vacuumizing, then starting the evaporation coating device, and vapor depositing a silicon dioxide medium layer on the surface of the stainless steel base material with the convex structure, wherein the thickness of the silicon dioxide medium layer is 50 nm. The evaporation process conditions are as follows: vacuum degree of 5.0X 10 or more-3Pa, evaporation voltage of 3kV, electron beam current of 20mA, substrate temperature of 350 deg.C, deposition rate controlled at
(3) And (3) depositing a tin antimony oxide layer, taking high-purity tin antimony oxide as an evaporation source, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), wherein the thickness of the tin antimony oxide layer is 100 nm. The evaporation process conditions are as follows: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working pressure is 0.5Pa, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled
Thereby obtaining the environment-friendly green semiconductor electrothermal film.
Example 2
The embodiment provides an environmental protection green semiconductor electrothermal film suitable for heating parts with different appearance structures, which specifically comprises the following steps:
(1) when the shape of the heated member comprises a convex part structure, a stainless steel plate is selected as a metal base material, and the stainless steel plate is subjected to punch forming treatment to obtain the stainless steel base material with the pit structure. Wherein, the pit structure of the stainless steel plate corresponds to the bulge structure of the shape of the heated member one by one.
(2) And (2) depositing a silicon dioxide medium layer, putting the stainless steel base material obtained in the step (1) on a sample platform of a vacuum coating machine, adopting high-purity quartz glass as a vapor deposition source, closing the evaporation coating device, vacuumizing, then starting the evaporation coating device, and vapor depositing a silicon dioxide medium layer on the surface of the stainless steel base material with the convex structure, wherein the thickness of the silicon dioxide medium layer is 30 nm. The evaporation process conditions are as follows: vapor deposition angle of 90 DEG, vacuum degree of 5.0X 10 or more-3Pa, evaporation voltage of 3kV, electron beam current of 20mA, substrate temperature of 350 deg.C, deposition rate controlled at
(3) And (3) depositing a tin antimony oxide layer, taking high-purity tin antimony oxide as an evaporation source, wherein the evaporation angle is 90 degrees, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), wherein the thickness of the tin antimony oxide layer is 80 nm. The evaporation process conditions are as follows: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working pressure is 0.5Pa, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled
Thereby obtaining the environment-friendly green semiconductor electrothermal film.
Example 3
The embodiment provides an environmental protection green semiconductor electrothermal film suitable for heating parts with different appearance structures, which specifically comprises the following steps:
(1) when the shape of the heated member simultaneously comprises a convex part structure and a concave part structure, a stainless steel plate is selected as a metal base material, and the stainless steel plate is subjected to punch forming treatment to obtain the stainless steel base material with the convex structure and the concave structure. The convex structures of the stainless steel plates correspond to the concave structures in the shape of the heated member one by one, and the concave structures correspond to the convex structures in the shape of the heated member one by one.
(2) And (2) depositing a silicon dioxide medium layer, putting the stainless steel base material obtained in the step (1) on a sample platform of a vacuum coating machine, adopting high-purity quartz glass as a vapor deposition source, closing the evaporation coating device, vacuumizing, then starting the evaporation coating device, and vapor depositing a silicon dioxide medium layer on the surface of the stainless steel base material with the convex structure, wherein the thickness of the silicon dioxide medium layer is 60 nm. The evaporation process conditions are as follows: vapor deposition angle of 90 DEG, vacuum degree of 5.0X 10 or more-3Pa, evaporation voltage of 3kV, electron beam current of 20mA, substrate temperature of 350 deg.C, deposition rate controlled at
(3) And (3) depositing a tin antimony oxide layer, taking high-purity tin antimony oxide as an evaporation source, wherein the evaporation angle is 90 degrees, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), wherein the thickness of the tin antimony oxide layer is 120 nm. The evaporation process conditions are as follows: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working pressure is 0.5Pa, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled
Thereby obtaining the environment-friendly green semiconductor electrothermal film.
Example 4
The embodiment provides an environmental protection green semiconductor electrothermal film suitable for heating parts with different appearance structures, which specifically comprises the following steps:
(1) when the shape of the heated member simultaneously comprises the concave part structure, a stainless steel plate is selected as a metal base material, and the stainless steel plate is subjected to punch forming treatment to obtain the stainless steel base material with the first convex structure and the second convex structure. The first protruding structures of the stainless steel plate correspond to the concave part structures in the shape of the heated member one by one, the second protruding structures correspond to the smooth parts in the shape of the heated member one by one, and the size of the second protruding structures is smaller than that of the first protruding structures.
(2) And (2) depositing a silicon dioxide medium layer, putting the stainless steel base material obtained in the step (1) on a sample platform of a vacuum coating machine, adopting high-purity quartz glass as a vapor deposition source, closing the evaporation coating device, vacuumizing, then starting the evaporation coating device, and vapor depositing a silicon dioxide medium layer on the surface of the stainless steel base material with the convex structure, wherein the thickness of the silicon dioxide medium layer is 60 nm. The evaporation process conditions are as follows: vapor deposition angle of 90 DEG, vacuum degree of 5.0X 10 or more-3Pa, evaporation voltage of 3kV, electron beam current of 20mA, substrate temperature of 350 deg.C, deposition rate controlled at
(3) And (3) depositing a tin antimony oxide layer, taking high-purity tin antimony oxide as an evaporation source, wherein the evaporation angle is 90 degrees, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), wherein the thickness of the tin antimony oxide layer is 120 nm. The evaporation process conditions are as follows: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working pressure is 0.5Pa, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled
Thereby obtaining the environment-friendly green semiconductor electrothermal film.
Comparative example 1
Different from the embodiment 1, the stamping forming treatment is not carried out in the step (1), and the planar stainless steel base material is adopted to directly deposit the dielectric film and the tin antimony oxide layer on the surface.
The electric heating properties of the surfaces of the heated members were measured by testing the electric heating properties of example 1 and comparative example 1 using a conventional testing method known to those skilled in the art, and the results are shown in fig. 4. In addition, the temperature distribution of the surface of the heated member was measured, and the results are shown in fig. 5. The adhesive strength of the semiconductor electrothermal film is tested by adopting a vertical traction measurement method, the adhesive used for bonding is Araldite resin, and the test is carried out under the conditions that the temperature is lower than 20 ℃ and the humidity is lower than 60%.
As can be seen from FIG. 4, the surface power factor of the heated member of the semiconductor electrothermal film of the embodiment of the invention can reach 7.5 muW/cmK at most2While the optimum value of the power factor in comparative example 1 was 2.5. mu.W/cmK2Therefore, the electric heating energy efficiency ratio of the semiconductor electric heating film is greatly improved. The adhesive strength of the invention is more than 250kg/cm through an adhesive strength test2The adhesive force of the electric heating film base body is good, and the problem of falling off in long-term use can not occur. In addition, as can be seen from the temperature distribution of fig. 5, the temperature distribution of the surface of example 4 is more uniform, and it can be seen that the heating uniformity of the electric heating film obtained by the stainless steel substrate comprising the first projection structure and the second projection structure is better.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. An environment-friendly green semiconductor electrothermal film suitable for heated parts with different appearance structures, the environment-friendly green semiconductor electrothermal film comprises: the tin antimony oxide electrothermal film comprises a metal base material, a tin antimony oxide electrothermal film and a silicon dioxide dielectric layer between the metal base material and the tin antimony oxide electrothermal film; wherein, the metal base material can be processed into the metal base material with a convex structure or a concave structure according to the appearance structure of the heated member.
2. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: the external shape of the heated part comprises one or a combination of a convex part and a concave part, the convex structure of the metal substrate corresponds to the concave part of the heated part, and the concave structure of the metal substrate corresponds to the convex part of the heated part.
3. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: the convex structures or the concave structures are any one or combination of hemispherical, pyramidal, semi-ellipsoidal, square and trapezoidal convex structures.
4. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: and the silicon dioxide dielectric layer and the tin antimony oxide layer are sequentially and uniformly paved on the metal base material with the convex structure or the concave structure.
5. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: the heated part appearance includes bellying or pit portion and pars planata, take the metal substrate of bellying structure or taking the pit structure to include first arch or pit structure and second arch or pit structure, first arch or pit structure and the bellying appearance one-to-one of heated part, second arch or pit structure and the pars planata one-to-one of heated part.
6. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: the second bump or pit structure has a smaller size than the first bump or pit structure.
7. The environment-friendly green semiconductor electrothermal film according to claim 1, wherein: the mass ratio of tin dioxide to antimony trioxide in the tin antimony oxide electrothermal film is 1: 1-1: 1.5.
8. A preparation method of the environment-friendly green semiconductor electrothermal film as claimed in any one of claims 1 to 7, which comprises the following steps:
(1) the method comprises the following steps of pretreating a metal base material, performing punch forming treatment on the metal base material according to the shape structure of a heated member to obtain the metal base material with a convex structure or a concave structure, and performing ultrasonic cleaning on the metal base material with the convex structure or the concave structure to remove surface dirt.
(2) And (2) depositing a silicon dioxide medium layer, putting the metal base material obtained in the step (1) on a sample platform of a vacuum coating machine, taking silicon dioxide as an evaporation source, closing the evaporation coating device, vacuumizing, then opening the evaporation coating device, and evaporating a silicon dioxide medium layer on the surface of the metal base material with a convex structure or a concave structure.
(3) And (3) depositing a tin antimony oxide layer, adjusting a corresponding evaporation process by taking tin antimony oxide as an evaporation source, and depositing a tin antimony oxide layer on the surface of the silicon dioxide dielectric layer obtained in the step (2), so as to obtain the environment-friendly green semiconductor electrothermal film.
9. The method of claim 9, wherein: the specific evaporation process in the step (3) comprises the following steps: vacuumizing the vacuum coating machine until the vacuum degree reaches 4 multiplied by 10-3When Pa is below, start to fill O2The working air pressure is 0.5Pa, tin antimony oxide is used as an evaporation source, the evaporation voltage is 2.5kV, the electron beam current is 15mA, the substrate temperature is 450 ℃, and the deposition rate is controlled at
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| CN111511049A (en) * | 2020-05-26 | 2020-08-07 | 江苏智先生电器有限公司 | Heating plate and manufacturing method thereof |
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| US20030066828A1 (en) * | 1999-12-10 | 2003-04-10 | Jeffery Boardman | Method of producing electrically resistive heating elements composed of semi-conductive metal oxides and resistive elements so produced |
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| JP2007220636A (en) * | 2006-02-20 | 2007-08-30 | Nissei Electric Co Ltd | Transparent conductive film heater |
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Application publication date: 20210406 |