CN112599271A - Electron radiation resistant multilayer structure shielding material and preparation method thereof - Google Patents
Electron radiation resistant multilayer structure shielding material and preparation method thereof Download PDFInfo
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- CN112599271A CN112599271A CN202011475474.3A CN202011475474A CN112599271A CN 112599271 A CN112599271 A CN 112599271A CN 202011475474 A CN202011475474 A CN 202011475474A CN 112599271 A CN112599271 A CN 112599271A
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- 239000000463 material Substances 0.000 title claims abstract description 26
- 230000005855 radiation Effects 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000003466 welding Methods 0.000 claims abstract description 43
- 239000011777 magnesium Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 34
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000007704 transition Effects 0.000 claims abstract description 17
- 238000007731 hot pressing Methods 0.000 claims description 33
- 238000001513 hot isostatic pressing Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000005476 soldering Methods 0.000 claims 3
- 239000002131 composite material Substances 0.000 abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 abstract description 16
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 238000013329 compounding Methods 0.000 abstract description 2
- 238000013461 design Methods 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000001291 vacuum drying Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005461 Bremsstrahlung Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
- G21F1/08—Metals; Alloys; Cermets, i.e. sintered mixtures of ceramics and metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B64—AIRCRAFT; AVIATION; COSMONAUTICS
- B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
- B64G1/00—Cosmonautic vehicles
- B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
- B64G1/52—Protection, safety or emergency devices; Survival aids
- B64G1/54—Protection against radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
- G21F1/08—Metals; Alloys; Cermets, i.e. sintered mixtures of ceramics and metals
- G21F1/085—Heavy metals or alloys
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/12—Laminated shielding materials
- G21F1/125—Laminated shielding materials comprising metals
Abstract
The invention discloses a high-energy electron radiation resistant multilayer structure shielding material and a preparation method thereof, belonging to the technical field of space radiation protection. According to strong constraint conditions and requirements of space radiation environment on material weight, shielding performance and the like, a multi-layer shielding design method is adopted, and a designed shielding material main body layer is formed by compounding high-Z metal tantalum and low-Z metal magnesium. When the areal density is 2g/cm2And then, the shielding performance of the layered composite shielding material to 3.5MeV electrons is more than 80%. A transition layer of metals such as Ti, Cu, Al and the like is introduced based on the metallurgical principle, and the metallurgical bonding of the incompatible metals of Mg and Ta is realized by a diffusion welding connection technology.
Description
Technical Field
The invention relates to the technical field of space radiation protection, in particular to an electron radiation resistant shielding material with a multilayer structure and a preparation method thereof.
Background
With the development of the state in the technical field of satellite and deep space exploration, the radiation-resistant reinforcement of the electronic components inside the space detector is also receiving more and more attention. In a space radiation environment, high-energy electrons and the like can cause ionization damage to electronic components and parts, and the safe and reliable service of the space detector is seriously damaged.
The role of energetic electrons and species is complex, mainly including: the high-energy electrons and electrons in substance atoms are subjected to inelastic scattering to excite or ionize the substances, the high-energy electrons and atomic nucleus are subjected to elastic scattering to change directions without losing energy, and the high-energy electrons and atomic nucleus are subjected to inelastic scattering to radiate bremsstrahlung photons and the like. Conventional shielding materials typically use a single metal material (e.g., Ta or Al). Although the shielding material with high atomic number (such as metal Ta) can play a good role in preventing charged particles from penetrating, strong bremsstrahlung radiation can be generated to emit X rays when electrons and heavy metals act, the X rays become a new radiation source, and a good comprehensive shielding effect cannot be realized. The low atomic number material (such as metal Al) can effectively reduce the moving speed of the charged particles and reduce bremsstrahlung, but cannot prevent the charged particles from penetrating.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a high-energy electron radiation resistant shielding material with a multilayer structure and a preparation method thereof.
The invention is realized by the following technical scheme.
The shielding material with the electron radiation resistant multilayer structure is characterized by comprising a metal tantalum layer and a metal magnesium layer, wherein a metal transition layer is arranged between the metal tantalum layer and the metal magnesium layer.
Further, the metal transition layer is two or more than two of a metal Ti layer, a Cu layer and an Al layer.
A method for preparing the shielding material with the multi-layer structure for resisting electronic radiation is characterized by comprising the following steps:
(1) polishing the surfaces of the metal tantalum and the metal magnesium by using abrasive paper, ultrasonically cleaning by using alcohol, and drying;
(2) sequentially preparing two or more than two of a metal Ti layer, a metal Cu layer and a metal Al layer on the surface of the metal tantalum obtained in the step (1) by thermal diffusion welding according to the sequence of thermal diffusion temperature from high to low;
(3) and (3) performing thermal diffusion welding connection on the tantalum with the metal transition layer on the surface obtained in the step (2) and the magnesium metal obtained in the step (1) to obtain the shielding material with the multilayer structure.
Further, in the step (2), the thermal diffusion welding method is hot pressing or hot isostatic pressing.
Further, in the step (2), two or more of the metal Ti layer, the Cu layer and the Al layer are sequentially welded on the surface of the metal tantalum from high thermal diffusion temperature to low thermal diffusion temperature by thermal diffusion welding.
Furthermore, the thermal diffusion temperature of the welding Ti layer is 900-1200 ℃, the thermal diffusion temperature of the welding Cu layer is 600-800 ℃, and the thermal diffusion temperature of the welding Al layer is 450-550 ℃.
Further, in the step (2), thermal diffusion welding: the welding atmosphere is inert gas or vacuum, the hot pressing pressure adopted in the welding process is 1MPa, and the pressure maintaining time is 3 h.
Further, in the step (3), the thermal diffusion welding method is hot isostatic pressing, the temperature is 400-440 ℃, the hot isostatic pressing pressure is 100MPa, and the heat preservation and pressure maintaining are carried out for 3 hours.
The invention has the beneficial technical effects that:
1. by adopting a design method of multilayer shielding, the advantages of high and low atomic number materials are fully combined, the designed shielding material main body layer is formed by compounding high Z metal tantalum and low Z metal magnesium, and the current surface density is 2g/cm2The layered composite shielding materialThe shielding performance to 3.5MeV electrons is more than 80 percent;
2. because the physical properties of Mg and Ta are greatly different and the compatibility is poor, the connection difficulty of the two metals is high. According to the invention, good metallurgical bonding of incompatible metals of Mg and Ta is realized by introducing metal transition layers of Ti, Cu, Al and the like.
Drawings
FIG. 1 shows the microstructure interface morphology of the Ta/Mg layered composite material of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
As shown in FIG. 1, the shielding material with multi-layer structure for resisting electron radiation comprises a high-Z metal tantalum layer, a low-Z metal magnesium layer and a metal transition layer arranged between the metal tantalum layer and the metal magnesium layer. The metal transition layer is two or more than two of a metal Ti layer, a metal Cu layer or an Al layer.
Example 1
And (3) polishing the surfaces of the tantalum and the magnesium by using abrasive paper, ultrasonically cleaning the surfaces by using alcohol, and then drying the surfaces in a vacuum drying oven at 100 ℃. Firstly welding a Ti metal layer on the surface of the tantalum metal by adopting a hot pressing process, wherein the hot pressing temperature is 900 ℃. And taking out the sample after the temperature is reduced to the room temperature, and then welding the Cu metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 600 ℃. And taking out the sample after the temperature is reduced to the room temperature, welding the Al metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 450 ℃, and taking out the sample after the temperature is reduced to the room temperature. The hot pressing pressure adopted in the process is 1MPa, the pressure maintaining time is 3h, and the welding atmosphere is argon. And placing the Ta metal and the Mg metal with the metal transition layers into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of the hot isostatic pressing at 400 ℃ and 100MPa for 3h, taking out a sample after the temperature reduction is finished, and machining an aluminum sheath to obtain the Ta/Mg layered composite material.
The Ta/Mg layered composite material prepared by the process realizes good metallurgical bonding. The test result shows that the surface density is 2g/cm2The shielding performance of the layered composite shielding material on 3.5MeV electrons82％。
Example 2
And (3) polishing the surfaces of the tantalum and the magnesium by using abrasive paper, ultrasonically cleaning the surfaces by using alcohol, and then drying the surfaces in a vacuum drying oven at 100 ℃. Firstly welding a Ti metal layer on the surface of the tantalum metal by adopting a hot pressing process, wherein the hot pressing temperature is 1200 ℃. And taking out the sample after the temperature is reduced to room temperature, and then welding the Cu metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 800 ℃. And taking out the sample after the temperature is reduced to the room temperature, welding the Al metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 550 ℃, and taking out the sample after the temperature is reduced to the room temperature. The hot pressing pressure adopted in the process is 1MPa, the pressure maintaining time is 3h, and the welding atmosphere is argon. And placing the Ta metal and the Mg metal with the metal transition layers into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of the hot isostatic pressing at 440 ℃ and 100MPa for 3h, taking out a sample after the temperature reduction is finished, and machining an aluminum sheath to obtain the Ta/Mg layered composite material.
The Ta/Mg layered composite material prepared by the process realizes good metallurgical bonding. The test result shows that the surface density is 2g/cm2The shielding performance of the layered composite shielding material on 3.5MeV electrons is 85%.
Example 3
And (3) polishing the surfaces of the tantalum and the magnesium by using abrasive paper, ultrasonically cleaning the surfaces by using alcohol, and then drying the surfaces in a vacuum drying oven at 100 ℃. Firstly welding a Ti metal layer on the surface of the tantalum metal by adopting a hot pressing process, wherein the hot pressing temperature is 1100 ℃. And taking out the sample after the temperature is reduced to room temperature, and then welding the Cu metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 700 ℃. And taking out the sample after the temperature is reduced to the room temperature, welding the Al metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 500 ℃, and taking out the sample after the temperature is reduced to the room temperature. The hot pressing pressure adopted in the process is 1MPa, the pressure maintaining time is 3h, and the welding atmosphere is argon. And placing the Ta metal and the Mg metal with the metal transition layers into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of hot isostatic pressing at 430 ℃ and 100MPa for 3h, taking out a sample after cooling, and machining an aluminum sheath to obtain the Ta/Mg layered composite material.
The Ta/Mg layered composite material prepared by the process realizes good metallurgical bonding. The test result shows that the surface density is 2g/cm2The shielding performance of the layered composite shielding material on 3.5MeV electrons is 87%.
Example 4
And (3) polishing the surfaces of the tantalum and the magnesium by using abrasive paper, ultrasonically cleaning the surfaces by using alcohol, and then drying the surfaces in a vacuum drying oven at 100 ℃. Firstly welding a Ti metal layer on the surface of tantalum metal by adopting a hot isostatic pressing process, wherein the hot pressing temperature is 1100 ℃. And taking out the sample after cooling to room temperature, welding the Al metal layer by adopting a hot isostatic pressing process, wherein the hot pressing temperature is 550 ℃, and taking out the sample after cooling to room temperature. The hot pressing pressure adopted in the process is 1MPa, the pressure maintaining time is 3h, and the welding atmosphere is vacuum. And placing the Ta metal and the Mg metal with the metal transition layers into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of hot isostatic pressing at 410 ℃ and 100MPa for 3h, taking out a sample after cooling, and machining an aluminum sheath to obtain the Ta/Mg layered composite material.
The Ta/Mg layered composite material prepared by the process realizes good metallurgical bonding. The test result shows that the surface density is 2g/cm2The shielding performance of the layered composite shielding material on 3.5MeV electrons is 82%.
Example 5
And (3) polishing the surfaces of the tantalum and the magnesium by using abrasive paper, ultrasonically cleaning the surfaces by using alcohol, and then drying the surfaces in a vacuum drying oven at 100 ℃. Firstly welding a Ti metal layer on the surface of the tantalum metal by adopting a hot pressing process, wherein the hot pressing temperature is 1100 ℃. And taking out the sample after cooling to room temperature, then welding the Cu metal layer by adopting a hot pressing process, wherein the hot pressing temperature is 700 ℃, and taking out the sample after cooling to room temperature. The hot pressing pressure adopted in the process is 1MPa, the pressure maintaining time is 3h, and the welding atmosphere is argon. And placing the Ta metal with the metal transition layer (Ti and Cu layers) into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of hot isostatic pressing at 500 ℃ and 1MPa for 3h, taking out a sample after cooling, and machining an aluminum sheath to obtain Ta metal with a Ti, Cu and Al transition layer on the surface. And placing the Ta metal and the Mg metal with the metal transition layers into a pure aluminum sheath, vacuumizing, sealing and welding, and then placing into a hot isostatic pressing furnace for hot isostatic pressing. And (3) keeping the temperature and pressure of hot isostatic pressing at 420 ℃ and 100MPa for 3h, taking out a sample after cooling, and machining an aluminum sheath to obtain the Ta/Mg layered composite material.
The Ta/Mg layered composite material prepared by the process realizes good metallurgical bonding. The test result shows that the surface density is 2g/cm2The shielding performance of the layered composite shielding material on 3.5MeV electrons is 86%.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention. It should be noted that other equivalent modifications can be made by those skilled in the art in light of the teachings of the present invention, and all such modifications can be made as are within the scope of the present invention.
Claims (7)
1. The shielding material with the electron radiation resistant multilayer structure is characterized by comprising a metal tantalum layer and a metal magnesium layer, wherein a metal transition layer is arranged between the metal tantalum layer and the metal magnesium layer.
2. The shielding material of claim 1, wherein the metal transition layer is two or more of a metal Ti layer, a Cu layer, and an Al layer.
3. A method for preparing the shielding material of multilayer structure against electron radiation according to claim 1 or 2, wherein the method comprises the following steps:
(1) polishing the surfaces of the metal tantalum and the metal magnesium by using abrasive paper, ultrasonically cleaning by using alcohol, and drying;
(2) sequentially preparing two or more than two of a metal Ti layer, a metal Cu layer and a metal Al layer on the surface of the metal tantalum obtained in the step (1) by thermal diffusion welding according to the sequence of thermal diffusion temperature from high to low;
(3) and (3) performing thermal diffusion welding connection on the tantalum with the metal transition layer on the surface obtained in the step (2) and the magnesium metal obtained in the step (1) to obtain the shielding material with the multilayer structure.
4. The production method according to claim 3, wherein in the step (2), the thermal diffusion welding method is hot pressing or hot isostatic pressing.
5. The production method according to claim 3, wherein the thermal diffusion temperature of the soldering Ti layer is 900 ℃ to 1200 ℃, the thermal diffusion temperature of the soldering Cu layer is 600 ℃ to 800 ℃, and the thermal diffusion temperature of the soldering Al layer is 450 ℃ to 550 ℃.
6. The production method according to claim 3, wherein the step (2) is a thermal diffusion welding: the welding atmosphere is inert gas or vacuum, the hot pressing pressure adopted in the welding process is 1MPa, and the pressure maintaining time is 3 h.
7. The preparation method according to claim 3, wherein in the step (3), the thermal diffusion welding method is hot isostatic pressing, the temperature is 400-440 ℃, the hot isostatic pressing pressure is 100MPa, and the temperature and the pressure are kept for 3 h.
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Cited By (3)
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| CN113733685A (en) * | 2021-09-06 | 2021-12-03 | 华北电力大学 | Light high-strength Mg-Al-Ta composite metal plate and roll forming method thereof |
| CN113990540A (en) * | 2021-09-28 | 2022-01-28 | 哈尔滨工业大学 | Flash device resistant to heavy ion single event effect and preparation method thereof |
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