CN104658624A - Radiation shielding electronic packaging material and preparation method for same - Google Patents
Radiation shielding electronic packaging material and preparation method for same Download PDFInfo
- Publication number
- CN104658624A CN104658624A CN201510039799.XA CN201510039799A CN104658624A CN 104658624 A CN104658624 A CN 104658624A CN 201510039799 A CN201510039799 A CN 201510039799A CN 104658624 A CN104658624 A CN 104658624A
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- Prior art keywords
- powder
- radiation shield
- heavy metal
- electronic package
- package material
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Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
- G21F1/08—Metals; Alloys; Cermets, i.e. sintered mixtures of ceramics and metals
- G21F1/085—Heavy metals or alloys
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
Abstract
The invention discloses a radiation shielding electronic packaging material, which comprises a sintered body of a composition, wherein the composition comprises heavy metal or heavy metal compound powder serving as a radiation shielding functional component, alumina ceramic powder serving as a substrate component, a sintering aid and an adhesive. The radiation shielding electronic packaging material is prepared by the following steps: uniformly mixing the heavy metal or heavy metal compound powder, the alumina ceramic powder and the sintering aid by taking an organic solvent as a dispersion medium; mixing the adhesive into the mixture after the mixture is dried, and performing granulation to obtain composite granules; performing dry-pressing molding and high-temperature sintering. The obtained material has high ray shielding performance, particularly high X and gamma ray radiation shielding performance.
Description
Technical field
The invention belongs to electronic package material field, be specifically related to have the electronic package material and preparation method thereof of high energy X, gamma Rays barrier propterty.
Background technology
The electronic component worked in high-energy particle radiation environment, because the radiation hardness grade of electron device and chip is very low, especially after chip etc. are subject to X, gamma Rays, radiating particle by with the electron interaction in material, produce ionisation effect and damage chip, cause the performance degradation of integrated circuit, cause the even complete permanent damage of logic function mistake, thus cause electronic component global failure.Radiation shield effectively can improve the radiation hardness grade of electron device and chip.But existing screen method exists, and shielding material is single, thick and heavy, processing difficulties, the shortcoming such as poisonous.
Current electronic package material is with plastics, ceramic main.Wherein plastics radiation resistance is poor, the reactions such as aging, degraded easily occur under heavy dose of rate x ray irradiation x, and thermal expansivity is large, poor with chip matching.Pottery itself has that radiation resistance is good, mechanical strength is high, chemical resistance and the advantage such as thermal expansivity is low, is a kind of excellent electronic package material.But pottery has radiation shield performance hardly, need to carry out modification to it thus effectively improve encapsulating material to the radiation protection performance of chip.
Publication number is the preparation method that the Chinese patent of CN102424568A discloses a kind of tungsten-containing alumina ceramic heating substrate, this method adopts aqueous tape casting forming technique to prepare aluminium oxide ceramic chips, through serigraphy at aluminium oxide ceramic chips surface uniform deposition tungsten slurry, then obtain tungstenic aluminium oxide heating base plate through oversintering, nickel plating technology.Ceramic heating base plate quality prepared by this invention is good, yield rate is high, and production cost is low.But the content of tungsten is lower, be only used as heating base plate material.
Publication number is the preparation method that the Chinese patent of CN101569929A discloses a kind of nano aluminum oxide coated tungsten powder, belong to field of powder metallurgy preparation, the principal character of the method is dissolved in altogether in distilled water ammonium metawolframate powder and Aluminium Sulphate usp (powder), be dispersed in pre-freeze in liquid nitrogen, vacuum drying, obtain the composite granule of nano aluminum oxide coated tungsten powder through hydrogen reducing, efficiently solve the problems such as nano aluminum oxide coated tungsten powder granularity is irregular, powder reuniting.But the method complex forming technology, cost are higher, productive rate is lower, are difficult to large-scale promotion and use.
Summary of the invention
The object of this invention is to provide one, for X, gamma-rays, there is better shielding properties, and realize high-termal conductivity and low thermal expansion by bi-material compound simultaneously, thus obtain the radiation shield electronic package material of excellent combination property and the preparation method of this material.
First aspect present invention is a kind of radiation shield electronic package material, and it comprises the sintered body of composition, and described composition comprises: as heavy metal or its compound powder of radiation shield function ingredients; As the alumina ceramics powder of matrix component; Sintering aid; And cementing agent.
According to the radiation shield electronic package material of preferred embodiment, in wherein said composition, the content of heavy metal or its compound powder, alumina ceramics powder, sintering aid is respectively 10.0wt% ~ 90.0wt%, 10.0wt% ~ 88.0wt%, 1.0wt% ~ 8.2wt%; And the addition of cementing agent is 0.5wt% ~ 10.0wt%.
According to the radiation shield electronic package material of preferred embodiment, wherein heavy metal or its compound powder are one or more in tungsten, tantalum, lead, bismuth, barium, tungsten oxide, tantalum pentoxide, massicot, bismuth oxide, baryta, tungsten carbide; Alumina powder jointed is one or more in 90 porcelain powder, 95 porcelain powder, 99 porcelain powder; Sintering aid is one or more in silicon dioxide, magnesium oxide, calcium oxide, yttria, lanthana; And described cementing agent is concentration is the aqueous solution of the polyvinyl alcohol (PVA) of 3.0wt% ~ 12.0wt%, epoxy resin or phenolics.
The present invention also provides a kind of method preparing preceding claim radiation shield electronic package material, comprises the following steps: heavy metal or its compound powder, alumina ceramics powder and sintering aid are that dispersion medium mixes with organic solvent; Be mixed into cementing agent after drying, granulation obtains composite particles; And dry-pressing formed rear high temperature sintering.
The present invention also provides the described purposes of radiation shield electronic package material in shielding X, gamma Rays.
The porosity of heavy metal prepared by employing said method or its compound/alumina composite encapsulating material is less, and thermal expansivity is lower, and heat conductivility is better.Adopt Co-60 as irradiation bomb, shielding properties test is carried out to the radiation shield performance of gained heavy metal or its compound/alumina composite encapsulating material.Composite encapsulating material has good alpha ray shield performance.
Accompanying drawing explanation
Fig. 1 is the preparation flow figure of heavy metal or its compound/alumina composite encapsulating material.
Fig. 2 is the metaloscope figure of embodiment 1 gained composite encapsulating material.
Fig. 3 is the scanning electron microscope (SEM) photograph of embodiment 1 gained composite encapsulating material section.
Fig. 4 is the X-ray diffractogram of embodiment 1 gained composite encapsulating material.
Embodiment
The present invention includes following steps:
(1) by heavy metal or its compound (being preferably oxide or carbonide), alumina powder jointed, sintering aid, using organic solvent as dispersion medium, mix.Drying obtains heavy metal or its compound/alumina composite powder.
(2) cementing agent is added to heavy metal or its compound/alumina composite powder, mixing granulation.
(3) by the heavy metal that obtains or its compound/alumina composite particles dry-pressing formed, obtain heavy metal or its compound/alumina compound substance green compact.
(4) by dry for the green compact obtained, be placed on high temperature sintering in high temperature process furnances, obtain heavy metal or its compound/alumina composite encapsulating material.
Heavy metal described in step (1) or its compound are one or more in tungsten, tantalum, lead, bismuth, barium, tungsten oxide, tantalum pentoxide, massicot, bismuth oxide, baryta, tungsten carbide, and its addition is 10.0wt% ~ 90.0wt%.Described alumina powder jointed be one or more in 90 porcelain powder, 95 porcelain powder, 99 porcelain powder, its addition is 10.0wt% ~ 88.0wt%.Described sintering aid is one or more in silicon dioxide, magnesium oxide, calcium oxide, yttria, lanthana, and its addition is 1.0wt% ~ 8.2wt%.Described dispersion medium can be one or more in methyl alcohol, ethanol, isopropyl alcohol, acetone, toluene.
In step (2), described cementing agent is the one in poly-vinyl alcohol solution, epoxy resin solution, phenol resin solution, and described agglomerant concentration is 3.0wt% ~ 12.0wt%, and addition is 0.5wt% ~ 10.0wt%.
In step (4), sintering temperature is 1250 ~ 1750 DEG C, temperature retention time 100 ~ 300min under maximum temperature.
Embodiment 1
Consisting of of composite powder: tungsten powder 14g, 95 alumina ceramics powder 25g, silicon dioxide 2.0g; Ethanol, as dispersion medium, mixes.Add the 7.0wt% phenol resin solution of 1.1g after drying as cementing agent, mixing granulation obtains tungsten/alumina composite particle.By after dry-pressing formed for tungsten/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1400 DEG C, and insulation 200min, obtains tungsten/alumina composite encapsulating material.
Fig. 2, Fig. 3 and Fig. 4 respectively illustrate the metaloscope figure of gained composite encapsulating material, the scanning electron microscope (SEM) photograph of material section, the X-ray diffractogram of material.
Embodiment 2
Consisting of of composite powder: tantalum powder 63g, 95 alumina ceramics powder 30g, silicon dioxide 0.5g, yttria 1.1g; Methyl alcohol, as dispersion medium, mixes.Add the 9.0wt% poly-vinyl alcohol solution of 1.2g after drying as cementing agent, mixing granulation obtains tantalum/alumina composite particle.By after dry-pressing formed for tantalum/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1400 DEG C, and insulation 100min, obtains tantalum/alumina composite encapsulating material.
Embodiment 3
Consisting of of composite powder: bismuth oxide powder 30g, 95 alumina ceramics powder 15g, calcium oxide 0.8g, silicon dioxide 0.8g; Acetone, as dispersion medium, mixes.Add the 4.0wt% poly-vinyl alcohol solution of 2.8g after drying as cementing agent, mixing granulation obtains bismuth oxide/alumina composite particle.By after dry-pressing formed for bismuth oxide/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1500 DEG C, and insulation 200min, obtains bismuth oxide/alumina composite encapsulating material.
Embodiment 4
Consisting of of composite powder: tungsten oxide powder 44g, 90 alumina ceramics powder 21g, magnesium oxide 2.0g; Isopropyl alcohol, as dispersion medium, mixes, and add the 10.0wt% epoxy resin solution of 1.2g after drying as cementing agent, mixing granulation obtains tungsten oxide/alumina composite particle.By after dry-pressing formed for tungsten oxide/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1450 DEG C, and insulation 150min, obtains tungsten oxide/alumina composite encapsulating material.
Embodiment 5
Consisting of of composite powder: baryta powder 35g, 95 alumina ceramics powder 26g, magnesium oxide 2.0g, titanium dioxide lanthanum 0.6g; Ethanol, as dispersion medium, mixes, and add the 10.0wt% epoxy resin solution of 1.2g after drying as cementing agent, mixing granulation obtains baryta/alumina composite particle.By after dry-pressing formed for baryta/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1350 DEG C, and insulation 220min, obtains baryta/alumina composite encapsulating material.
Embodiment 6
Consisting of of composite powder: bismuth meal 6.2g, 95 alumina ceramics powder 50g, silicon dioxide 3.0g; Methyl alcohol, as dispersion medium, mixes.Add the 7.0wt% poly-vinyl alcohol solution of 1.1g after drying as cementing agent, mixing granulation obtains bismuth/alumina composite particle.By after dry-pressing formed for bismuth/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1550 DEG C, and insulation 250min, obtains bismuth/alumina composite encapsulating material.
Embodiment 7
Consisting of of composite powder: tungsten carbide 110g, 95 alumina ceramics powder 25g, magnesium oxide 2.0g; Ethanol, as dispersion medium, mixes.Add the 7.0wt% poly-vinyl alcohol solution of 1.4g after drying as cementing agent, mixing granulation obtains tungsten carbide/alumina composite particle.By after dry-pressing formed for tungsten carbide/alumina composite particle in high temperature process furnances high temperature sintering, sintering temperature is 1750 DEG C, and insulation 200min, obtains tungsten carbide/alumina composite encapsulating material.
With Co-60 radioactive source for irradiation bomb, the shielding properties of compound substance is tested.Test result is as shown in the table:
Comparative example
Provide the performance data of the radiation shield of the electron device package material the most often adopted at present below.The shielding properties of aluminium oxide ceramics (comparative example 2) prepared by the epoxy resin encapsulating material (comparative example 1) adopting casting method to prepare and employing dry pressing is as shown in the table:
By comparing, prepared radiation shield electronic package material radiation shield performance significantly improves.
Claims (10)
1. a radiation shield electronic package material, it comprises the sintered body of composition, and described composition comprises:
As heavy metal or its compound powder of radiation shield function ingredients;
As the alumina ceramics powder of matrix component;
Sintering aid; And
Cementing agent.
2. radiation shield electronic package material as claimed in claim 1, in wherein said composition, the content of heavy metal or its compound powder, alumina ceramics powder, sintering aid is respectively 10.0wt% ~ 90.0wt%, 10.0wt% ~ 88.0wt%, 1.0wt% ~ 8.2wt%; And the addition of cementing agent is 0.5wt% ~ 10.0wt%.
3. radiation shield electronic package material as claimed in claim 1, in wherein said composition, the content of heavy metal or its compound powder, alumina ceramics powder, sintering aid is respectively 10.0wt% ~ 80.0%, 18.2wt% ~ 81.8wt%, 1.0wt% ~ 8.2wt%.
4. radiation shield electronic package material as claimed in claim 1 or 2, wherein heavy metal or its compound powder are one or more in tungsten, tantalum, lead, bismuth, barium, tungsten oxide, tantalum pentoxide, massicot, bismuth oxide, baryta, tungsten carbide.
5. radiation shield electronic package material as claimed in claim 1 or 2, wherein alumina powder jointed is one or more in 90 porcelain powder, 95 porcelain powder, 99 porcelain powder.
6. the radiation shield electronic package material as described in right 1 or 2, wherein sintering aid is one or more in silicon dioxide, magnesium oxide, calcium oxide, yttria, lanthana; And described cementing agent is concentration is the aqueous solution of the polyvinyl alcohol (PVA) of 3.0wt% ~ 12.0wt%, epoxy resin or phenolics.
7. prepare a method for the radiation shield electronic package material described in claim 1-6, it is characterized in that comprising the following steps:
Heavy metal or its compound powder, alumina ceramics powder and sintering aid are that dispersion medium mixes with organic solvent;
Be mixed into cementing agent after drying, granulation obtains composite particles; And
Dry-pressing formed rear high temperature sintering.
8. method as claimed in claim 7, wherein organic solvent is one or more in methyl alcohol, ethanol, isopropyl alcohol, acetone, toluene; And sintering temperature is 1250 ~ 1750 DEG C, temperature retention time 100 ~ 300min.
9. the radiation shield electronic package material that the method as claim 7 or 8 prepares.
10. the radiation shield electronic package material described in claim 1 or 9 is used for shielding X, gamma Rays.
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| CN201510039799.XA CN104658624B (en) | 2015-01-27 | 2015-01-27 | Radiation shielding electronic packaging material and preparation method for same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105647122A (en) * | 2016-03-22 | 2016-06-08 | 苏州捷德瑞精密机械有限公司 | Radiation shielding composite material and preparation method thereof |
| CN106811662A (en) * | 2016-12-30 | 2017-06-09 | 东莞市佳乾新材料科技有限公司 | A kind of preparation method of the electronic package material with radiation-resisting functional |
| CN111403063A (en) * | 2018-12-13 | 2020-07-10 | 苏州嘉乐威企业发展有限公司 | Radiation protection composition, radiation protection material and radiation protection product |
| CN112071459A (en) * | 2020-09-07 | 2020-12-11 | 圣华盾防护科技股份有限公司 | X/gamma ray shielding composite material based on polyvinyl alcohol through-hole foam and preparation method thereof |
| CN112599271A (en) * | 2020-12-14 | 2021-04-02 | 有研工程技术研究院有限公司 | Electron radiation resistant multilayer structure shielding material and preparation method thereof |
| CN113683909A (en) * | 2021-09-02 | 2021-11-23 | 上海大学 | Nano bismuth oxide anti-radiation ceramic coating, preparation method and application |
| CN115376716A (en) * | 2022-08-11 | 2022-11-22 | 哈尔滨工业大学 | High-entropy ceramic oxide coating for shielding neutrons and gamma rays and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105647122A (en) * | 2016-03-22 | 2016-06-08 | 苏州捷德瑞精密机械有限公司 | Radiation shielding composite material and preparation method thereof |
| CN106811662A (en) * | 2016-12-30 | 2017-06-09 | 东莞市佳乾新材料科技有限公司 | A kind of preparation method of the electronic package material with radiation-resisting functional |
| CN111403063A (en) * | 2018-12-13 | 2020-07-10 | 苏州嘉乐威企业发展有限公司 | Radiation protection composition, radiation protection material and radiation protection product |
| CN111403063B (en) * | 2018-12-13 | 2023-11-10 | 苏州嘉乐威新材料股份有限公司 | Radiation protection composition, radiation protection material and radiation protection product |
| CN112071459A (en) * | 2020-09-07 | 2020-12-11 | 圣华盾防护科技股份有限公司 | X/gamma ray shielding composite material based on polyvinyl alcohol through-hole foam and preparation method thereof |
| CN112599271A (en) * | 2020-12-14 | 2021-04-02 | 有研工程技术研究院有限公司 | Electron radiation resistant multilayer structure shielding material and preparation method thereof |
| CN113683909A (en) * | 2021-09-02 | 2021-11-23 | 上海大学 | Nano bismuth oxide anti-radiation ceramic coating, preparation method and application |
| CN115376716A (en) * | 2022-08-11 | 2022-11-22 | 哈尔滨工业大学 | High-entropy ceramic oxide coating for shielding neutrons and gamma rays and preparation method thereof |
| CN115376716B (en) * | 2022-08-11 | 2023-06-16 | 哈尔滨工业大学 | High-entropy ceramic oxide coating for shielding neutrons and gamma rays and preparation method thereof |
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