CN112540056A - Array terahertz receiving device and reading device thereof - Google Patents
Array terahertz receiving device and reading device thereof Download PDFInfo
- Publication number
- CN112540056A CN112540056A CN202011415931.XA CN202011415931A CN112540056A CN 112540056 A CN112540056 A CN 112540056A CN 202011415931 A CN202011415931 A CN 202011415931A CN 112540056 A CN112540056 A CN 112540056A
- Authority
- CN
- China
- Prior art keywords
- low
- terahertz
- long
- detection unit
- arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 121
- 239000003990 capacitor Substances 0.000 claims abstract description 87
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000010168 coupling process Methods 0.000 claims abstract description 34
- 238000005859 coupling reaction Methods 0.000 claims abstract description 34
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000002955 isolation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 claims description 8
- 239000002537 cosmetic Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 2
- 230000016507 interphase Effects 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 6
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- 230000004044 response Effects 0.000 description 9
- 238000009413 insulation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 208000029278 non-syndromic brachydactyly of fingers Diseases 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
Abstract
The invention discloses an array terahertz receiving device and a reading device thereof. The reading device comprises a signal generating module based on a dressing signal generator and a local vibration source, a signal processing module based on an in-phase quadrature mixer group, and a signal detecting device based on an array type terahertz receiving device and a low-temperature vacuum optical Dewar. The array terahertz receiving device comprises a coplanar waveguide and array-type resonance detection units. Each resonance detection unit comprises a large interdigital capacitor, a small interdigital capacitor, a zigzag inductor and a superconducting antenna coupling detection unit which is connected with the large interdigital capacitor, the small interdigital capacitor and the zigzag inductor and is based on the superconducting niobium nitride bolometer. When the terahertz signal is detected, the signal generation module injects the resonant microwave signals of each resonant detection unit into the array terahertz receiving device in a frequency division multiplexing mode, and the in-phase quadrature mixer demodulates the terahertz signals received by each resonant detection unit in a frequency division multiplexing mode. The terahertz imaging device can be used for terahertz imaging.
Description
Technical Field
The invention relates to terahertz spectrum detection based on a superconducting niobium nitride bolometer.
Background
Terahertz waves generally refer to electromagnetic waves with the frequency of 0.1THz to 10THz, and the wave band is between microwave and infrared. The terahertz wave has the characteristics of penetrability to dry materials such as paper and cloth, fingerprint spectrum and the like, and can be applied to the fields of security inspection imaging, biological medicine and the like. In addition, main molecular ion emission lines of the astrology in the universe, such as CO, CS, SO2, HCO +, HCN, C, N + and C + and the like, are distributed in the terahertz frequency band, SO that the research on information contained in the terahertz frequency line is particularly important for understanding the evolution of the astrology and the celestial body. In recent decades, as scientists have made intensive studies on terahertz waves, there are many different kinds of terahertz detectors and radiation sources.
At present, in the fields of terahertz detection, imaging and the like, a fast and sensitive detector is generally needed. A Hot-electron Bolometer (HEB) terahertz direct detector based on a niobium nitride (NbN) superconducting film has the advantages of high speed, high sensitivity, about 35 ps of response time and about 10 of noise equivalent power-13~10-12W/√ Hz, is a powerful tool for detecting weak terahertz signals operating in the liquid helium (about 4.2K) temperature region. With the development of terahertz security imaging application, the demand on a detector is metThe day is increasing.
Patent document CN 110455410 a discloses an array resonant terahertz receiver and a terahertz spectrometer device thereof. The array resonant terahertz receiver comprises a plurality of groups of antenna arrays with different resonant frequencies. The antenna array is composed of resonant units arranged in NxM rows and columns. The resonance unit is a double-opening resonance ring structure based on an inductance-capacitance resonance principle. The center part of the double-opening resonant ring structure of the most central resonant unit of the antenna array is provided with a superconducting niobium nitride thermionic bolometer, and the superconducting niobium nitride thermionic bolometer is bridged by the superconducting niobium nitride thermionic bolometer. The terahertz spectrograph device has high sensitivity when detecting terahertz spectrum signals. Therefore, the terahertz detector with the array type resonance structure is a good development direction.
In the prior art, detection research on terahertz is still in a stage of detecting whether terahertz can be more effectively detected, and how to perform terahertz waveband imaging by utilizing terahertz is in a stage of starting.
Disclosure of Invention
The problems to be solved by the invention are as follows: terahertz waveband imaging is performed by utilizing terahertz.
In order to solve the problems, the invention adopts the following scheme:
the array terahertz receiving device comprises a receiving circuit arranged on a substrate; the receiving circuit comprises a coplanar waveguide, a resonance detection unit and a coplanar waveguide ground plane; the coplanar waveguide comprises a center feed line and a feed line joint part connected to the tail end of the center feed line; the central feeder line, the feeder line connector part and the resonance detection unit are surrounded by a coplanar waveguide ground plane and are insulated and separated from the coplanar waveguide ground plane; the number of the resonance detection units is N multiplied by M, and the resonance detection units are arranged into a resonance detection unit array according to N multiplied by M rows and columns; the central feeder is arranged in a zigzag manner and is inserted among the rows or the columns of the resonance detection unit array back and forth; the resonance detection unit comprises a large capacitor, a small capacitor, a micro-inductor and an antenna coupling detection unit; the large capacitor and the small capacitor are interdigital capacitors formed by interleaving left and right fingers arranged on the surface of the substrate; the capacitance value of the large capacitor is at least 50 times that of the small capacitor; the micro inductor is a zigzag inductor formed by repeatedly routing wires arranged on the surface of the substrate in a zigzag manner; the antenna coupling detection unit comprises a low-pass filtering ground plane, a superconducting niobium nitride film, a step impedance low-pass filter and a double-groove antenna; the low-pass filtering ground plane is provided with a central slot which penetrates through the two ends of the central line; the central slot comprises an antenna feeder slot and two low-pass filter slots; the antenna feeder line slot is positioned between the two low-pass filter slots; the double-slot antenna is arranged in an antenna feeder slot and comprises two antenna feeders arranged along the central line of the low-pass filtering ground plane; the superconducting niobium nitride film is arranged between the two antenna feeder lines, and two ends of the superconducting niobium nitride film are respectively connected with the two antenna feeder lines; the antenna feeder slot is connected with two cross slots crossed with the antenna feeder slot; the two crossed slot gaps are crossed with the two antenna feeder lines respectively and are symmetrical on two sides by taking the superconducting niobium nitride film as a center, so that the superconducting niobium nitride film is arranged at the center feed position of the double-slot antenna; the two low-pass filtering slots are symmetrical on two sides by taking the superconducting niobium nitride film as a center; the two step impedance low-pass filters are respectively arranged in the two low-pass filter slots; the two step impedance low-pass filters are symmetrical on two sides by taking the superconducting niobium nitride film as a center; the step impedance low-pass filter comprises two low impedance lines and two high impedance lines; the two low-impedance lines and the two high-impedance lines are connected in an interphase way, wherein the innermost high-impedance line is butted with the antenna feeder line, and the outermost low-impedance line is connected with the large capacitor, the small capacitor and the micro-inductor; two ends of the large capacitor are respectively connected with two ends of the micro inductor; one end of the antenna coupling detection unit is connected with one end of the large capacitor, and the other end of the antenna coupling detection unit is connected with the other end of the large capacitor after being connected with the small capacitor in series; the length and width of the resonance detection unit are less than one twentieth of the wavelength of the resonance frequency of the resonance detection unit; wherein N and M are greater than or equal to 1.
Further, according to the array terahertz receiving device of the invention, the large capacitor comprises a long left arm and a long right arm which are parallel to each other; the long left arm is connected with a plurality of long left fingers; the long right arm is connected with a plurality of long right fingers; the long left finger and the long right finger are perpendicular to the long left arm and the long right arm; the long left fingers and the long right fingers are alternately staggered between the long left arm and the long right arm; the small capacitor comprises a short left arm and a short right arm which are parallel to each other; the short left arm is connected with a plurality of short left fingers; the short right arm is connected with a plurality of short right fingers; the short left finger and the short right finger are perpendicular to the short left arm and the short right arm; the short left fingers and the short right fingers are alternately staggered between the short left arm and the short right arm; the short right arm and the long right arm are collinear; the antenna coupling detection unit is arranged between the short left arm and the long left arm and is positioned in the south of the long left finger and the long right finger; the high impedance line is perpendicular to the short left arm and the long left arm; the low impedance line on the outermost side of the left end of the antenna coupling detection unit is connected with the long left arm, and the low impedance line on the outermost side of the right end of the antenna coupling detection unit is connected with the short left arm; the micro inductor is arranged on the left side of the large capacitor and comprises a plurality of horizontal folding lines and vertical folding lines; the horizontal folding line is vertical to the long left arm; the vertical folding line is parallel to the long left arm; the horizontal folding lines are arranged at equal intervals along the direction parallel to the long left arm, and the left end and the right end of each horizontal folding line are respectively connected with two adjacent horizontal folding lines through vertical folding lines; wherein, the most northern horizontal broken line is connected with the long right arm through the left bridge shoulder; the southern horizontal broken line is connected with the long left arm through a right bridge arm and a right bridge shoulder; the right bridge arm is parallel to the long left arm; the right bridge shoulder is vertical to the long left arm and is collinear with the north-most long left finger; and two ends of the right bridge shoulder are respectively connected with the right bridge arm and the long left arm.
Furthermore, according to the array terahertz receiving device, the left bridge shoulder is parallel to the feeder line interval section of the center feeder line and is separated by the coplanar waveguide ground plane; the part of the coplanar waveguide ground plane, which is positioned between the left bridge shoulder and the feeder line interval section, is a ground isolation section; the distance between the left bridge shoulder and the feeder line interval is not more than 10 microns; the ground isolation segment has a width of no more than 4 microns.
Further, according to the array terahertz receiving device, the large capacitors of the resonance detection units have different left-hand and right-hand indexes, so that the resonance frequencies of the resonance detection units are different; the resonance frequencies of the resonance detection units are in an arithmetic progression.
Further, according to the array-type terahertz receiving device of the invention, in addition to the superconducting niobium nitride film, other parts of the receiving circuit are made of a second superconducting material having the same superconducting critical transition temperature, and the superconducting critical transition temperature of the second superconducting material is higher than the superconducting critical transition temperature of the superconducting niobium nitride film.
Furthermore, according to the array terahertz receiving device, the thickness of the superconducting niobium nitride film is 3.0-5.0 nanometers; the second superconducting material adopts a niobium nitride film with the thickness of 350 nanometers.
The readout device comprises a dressing signal generator, an in-phase and quadrature mixer and a signal detection device; the signal detection device comprises a low-temperature vacuum optical Dewar, a Fresnel lens, a low-temperature attenuator, a low-temperature low-noise amplifier and the array terahertz receiving device, wherein the Fresnel lens, the low-temperature attenuator, the low-temperature low-noise amplifier and the array terahertz receiving device are arranged in the low-temperature vacuum optical Dewar; a terahertz transparent window is arranged on the low-temperature vacuum optical Dewar; the array terahertz receiving device is right opposite to the terahertz transparent window, and the Fresnel lens is arranged between the terahertz transparent window and the array terahertz receiving device, so that terahertz waves entering the low-temperature vacuum optical Dewar through the terahertz transparent window can be irradiated on the array terahertz receiving device; two ends of a central feeder of the array terahertz receiving device are respectively connected with feeder joint parts; the feeder line joint part at one end is connected with the output end of the low-temperature attenuator, and the feeder line joint part at the other end is connected with the input end of the low-temperature low-noise amplifier; the dressing signal generator comprises a plurality of single-frequency signal generators; the output ends of the single-frequency signal generators are connected in parallel and then connected with an upper frequency converter, and the output ends of the single-frequency signal generators are connected with the input end of the low-temperature attenuator in the low-temperature vacuum optical Dewar through the upper frequency converter; the number of the in-phase and quadrature mixers is multiple; the input ends of the in-phase quadrature mixers are connected with a down converter after being connected in parallel, and the down converter is connected with the output end of the low-temperature low-noise amplifier in the low-temperature vacuum optical Dewar; the up converter and the down converter are connected with a local vibration source; the up-converter is used for synthesizing a signal generated by the single-frequency signal generator and a signal generated by the local vibration source so as to generate an input signal with the same resonance frequency as that of each resonance detection unit in the array terahertz receiving device; the down converter is used for decomposing local oscillation signals of the array terahertz receiving device through the signals output by the low-temperature low-noise amplifier according to the frequency of the signals generated by the local oscillation source; the number of the in-phase and quadrature mixers is the same as that of the single-frequency signal generators, so that the single-frequency signal generators and the in-phase and quadrature mixers are in one-to-one correspondence; and each single-frequency signal generator is respectively connected with the corresponding in-phase and quadrature frequency mixer.
Further, according to the reading apparatus of the present invention, the dressing signal generator includes nxm single-frequency signal generators; the number of the in-phase and quadrature mixers is N multiplied by M; the signal frequencies generated by the single-frequency signal generators are different, so that the signal frequencies synthesized and output by the up-converter respectively correspond to the resonance frequencies of the NxM resonance detection units in the array terahertz receiving device.
Further, the readout device according to the present invention further includes a normal temperature adjustable attenuator disposed between the up-converter and the low temperature attenuator.
Furthermore, the reading device also comprises a plurality of analog-to-digital converters and a plurality of digital signal processors; the two outputs of the in-phase quadrature mixer are respectively connected with two analog-to-digital converters and are connected with a digital signal processor through the two analog-to-digital converters; the digital signal processor is used for calculating square sum and post-open square root of the data converted by the two analog-to-digital converters.
The invention has the following technical effects:
1. the system is simple, easy to popularize, capable of being integrated on chip, relatively simple in preparation process and low in cost.
2. The terahertz wave detection device is high in sensitivity and high in response speed when detecting terahertz waves, and is suitable for the fields of terahertz passive imaging and the like.
Drawings
Fig. 1 is a schematic structural diagram of an array-type terahertz receiving device according to an embodiment of the present invention.
Fig. 2 is an enlarged view of a dashed box R1 in fig. 1.
Fig. 3 is an enlarged view of a dashed box R2 in fig. 2.
Fig. 4 is a simplified circuit schematic of the resonance detection unit.
Fig. 5 is a schematic diagram of the overall structure of an embodiment of the reading apparatus of the present invention.
Wherein the content of the first and second substances,
1 is an array type terahertz receiving device, 100 is a receiving circuit, 110 is a coplanar waveguide, 11 is a central feeder, 111 is a feeder line interval section, 112 is a central feeder groove, 12 is a feeder line joint part, 121 is a wire binding pad, 122 is a pad groove, 130 is a resonance detection unit array, 14 is a coplanar waveguide ground plane, 141 is a ground isolation section, and 19 is a substrate;
200 is a resonance detection circuit, 2 is a resonance detection unit, 21 is a large capacitor, 211 is a long left arm, 212 is a long right arm, 213 is a long left finger, 214 is a long right finger, 215 is a long finger slit gap, 22 is a small capacitor, 221 is a short left arm, 222 is a short right arm, 223 is a short left finger, 224 is a short right finger, 225 is a short finger slit gap, 23 is a micro-inductor, 231 is a horizontal broken line, 232 is a vertical broken line, 233 is a right arm, 234 is a right bridge shoulder, 235 is a left bridge shoulder, 24 is an antenna coupling detection unit, 241 is a low-pass filter ground plane, 2410 is a center slit, 2411 is an antenna feed line slit, 2412 is a low-pass filter slit, 242 is a superconducting niobium nitride film, 243 is a stepped impedance low-pass filter, 2431 is a low impedance line, 2432 is a high impedance line, 244 is a double-slot antenna, 2441 is an antenna feed line, 2442 is a cross slot, and 29 is a resonance slot;
300 is a signal generating module, 3 is a dressing signal generator, 31 is a single-frequency signal generator, 32 is an up-converter, 33 is a local vibration source, and 34 is a normal-temperature adjustable attenuator;
400 is a signal processing module, 4 is an in-phase quadrature mixer group, 41 is an in-phase quadrature mixer, 42 is a down-converter, 43 is an analog-to-digital converter, 44 is a digital signal processor, 45 is a memory;
500 is a signal detection device, 5 is a low-temperature vacuum optical Dewar, 52 is a Fresnel lens, 53 is a low-temperature attenuator, 54 is a low-temperature low-noise amplifier, 55 is a terahertz transparent window, and 551 is an optical filter;
l 1is the length of the resonance detection unit in the left-right direction;
w 1is the width of the center feed line,g 1is the width of the insulation gap from the center feed line to the edge of the center feed line slot;
w 2is the width of the fold line,g 2is the spacing of the horizontal fold lines,l 2is the length of the horizontal fold line;
l 3is the length of the finger for the large capacitor,l 4is the small capacitor finger length;
w 4is the width of the low resistance line,l 5is the length of the low-impedance line,l 6is the spacing of the two low impedance lines;
g 4is the width of the low-pass filter slot,g 5is the width of the antenna feed slot;
w 5is the width of the high impedance line and the antenna feed line;
g 6is the length of the cross-over slot,l 8is the width of the cross-over slot,l 7is the center distance of two crossed slots;
c 1is the width of the ground isolation section,c 2is the width of the insulation gap between the left bridge shoulder and the ground isolation section.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1
The present embodiment exemplifies an array-type terahertz receiving device, as shown in fig. 1, including a receiving circuit 100 provided on a substrate 19. The substrate 19 is preferably made of high-resistivity silicon having a resistivity of 10 k.OMEGA. ∙ cm or sapphire. The receiving circuit 100 comprises a coplanar waveguide 110, a resonance detecting unit 2 and a coplanar waveguide ground plane 14. The coplanar waveguide 110 includes a center feed line 11 and a feed line connector 12 connected to an end of the center feed line 11. The center feeder 11, the feeder joint part 12 and the resonance detection unit 2 are surrounded by the coplanar waveguide ground plane 14 and are insulated and separated from the coplanar waveguide ground plane 14.
Specifically, the center feed line 11 is disposed in the center feed line slot 112, and is insulated from the coplanar waveguide ground plane 14 by a gap between the center feed line 11 and two side edges of the center feed line slot 112. Referring to fig. 2, in the present embodiment, the width of the center feed line 11w 14 microns, center feed line 14 to center feed line slot 112 edge insulation gap widthg 1Is 2.5 microns. The number of the feeder line joint parts 12 is two, and the two feeder line joint parts 12 are respectively positioned at two ends of the center feeder line 11. The feeder tab 12 includes a binding pad 121. The wire bonding pad 121 is arranged in the pad groove 122, and is insulated and isolated from the coplanar waveguide ground plane 14 through a gap between the wire bonding pad 121 and the edge of the pad groove 122. The pad slot 122 is communicated with the central feeder slot 112, and the wire binding pad 121 is connected with the central feeder 11. The binding wire pad 121 is used for input and output wiring of signals; one of the binding-wire pads 121 serves as an input of a resonance signal, and the other binding-wire pad 121 serves as an output of a probe signal.
The resonance detection units 2 are N × M, and are arranged in N × M rows and columns to form the resonance detection unit array 130. Wherein N and M are greater than or equal to 1. The center feed line 11 is laid in a zigzag shape and is inserted back and forth between rows or columns of the resonant probing unit array 130. In this embodiment, the central feeding line 11 passes back and forth between the rows of the resonant detection unit array 130, and the portion of the central feeding line 11 between the rows of the resonant detection unit array 130 is the feeding line row interval section 111. In the present embodiment, N is 14 and M is 14, that is, the resonance detecting unit array 130 is an array of 14 rows and 14 columns of resonance detecting units 2, and there are 196 resonance detecting units 2 in total.
As shown in fig. 2, the resonance detecting unit 2 includes a large capacitor 21, a small capacitor 22, a micro inductor 23, and an antenna coupling detecting unit 24 disposed in a resonance tank 29. The large capacitor 21 and the small capacitor 22 are interdigital capacitors formed by interleaving left and right fingers disposed on the surface of the substrate 19. The micro-inductor 23 is a meander inductance formed by a wire provided on the surface of the substrate 19 repeatedly following a zigzag trace. The large capacitor 21, the small capacitor 22, the micro inductor 23 and the antenna coupling detection unit 24 are connected to form a resonance detection circuit 200. The resonant tank circuit 200 is isolated from the coplanar waveguide ground plane 14 by a gap at the edge of the resonant tank 29.
Specifically, the large capacitor 21 includes a long left arm 211 and a long right arm 212 that are parallel to each other. The long left arm 211 has a number of long left fingers 213 attached. A number of long right fingers 214 are attached to long right arm 212. Long left finger 213 and long right finger 214 are perpendicular to long left arm 211 and long right arm 212. The long left fingers 213 and the long right fingers 214 are alternately arranged between the long left arm 211 and the long right arm 212 in a staggered manner to form an interdigitated structure, and an insulated long finger slit 215 is arranged between the long left fingers 213 and the long right fingers 214. The long left finger 213 and the long right finger 214 have the same length, namely the finger length of the large capacitorl 3. In this embodiment, the finger length of the large capacitorl 3Is 712 microns.
The small capacitor 22 includes a short left arm 221 and a short right arm 222 that are parallel to each other. Short left arm 221 has attached to it a number of short left fingers 223. Short right arm 222 has a number of short right fingers 224 attached. Short left finger 223 and short right finger 224 are perpendicular to short left arm 221 and short right arm 222. Short left fingers 223 and short right fingers 224 are arranged between the short left arm 221 and the short right arm 222 in an alternating and staggered mode to form an alternating and interdigital structure, and short finger slit gaps 225 for insulation are formed between the short left fingers 223 and the short right fingers 224. The short left finger 223 and the short right finger 224 have the same length, i.e. the finger length of the small capacitorl 4. In this embodiment, the finger length of the small capacitorl 4Is 72 microns.
In addition, in this embodiment, the short finger slit gap 225 and the long finger slit gap 215 have the same width, which is 2 micrometers; the long left finger 213, the long right finger 214, the short left finger 223, and the short right finger 224 are the same width, each 2 microns. The capacitance of the large capacitor 21 is at least 50 times the capacitance of the small capacitor 22. In the present embodiment, the capacitance of the large capacitor 21 is about 100 times that of the small capacitor 22.
In this embodiment, short right arm 222 and long right arm 212 are collinear, and short right arm 222 is located south of long right arm 212. The antenna-coupling detecting unit 24 is disposed between the short left arm 221 and the long left arm 211, and is located south of the long left finger 213 and the long right finger 214. That is, the antenna coupling detection unit 24 is located south of the large capacitor 21 and to the left of the small capacitor 22. The left and right ends of the antenna coupling detection unit 24 are connected to the long left arm 211 and the short left arm 221, respectively.
The micro inductor 23 is disposed on the left side of the large capacitor 21, or, as it were, on the left side of the long left arm 211. The micro-inductor 23 includes a plurality of horizontal folding lines 231 and vertical folding lines 232. The horizontal fold line 231 is perpendicular to the long left arm 211. The vertical fold line 232 is parallel to the long left arm 211. The horizontal folding lines 231 are arranged at equal intervals in a direction parallel to the long left arm 211, and the left and right ends are connected to two adjacent horizontal folding lines 231 by vertical folding lines 232, respectively. Wherein the north most horizontal fold line 231 connects the long right arm 212 via the left shoulder 235. The south-most horizontal fold line 231 connects the long left arm 211 through a right bridge leg 233 and a right bridge shoulder 234. That is, both ends of the large capacitor 21 are connected to both ends of the micro inductor 23, respectively. Right leg 233 is parallel to long left arm 211. Right bridge shoulder 234 is perpendicular to long left arm 211 and is collinear with the north-most long left finger 213. Right bridge shoulder 234 is connected at its two ends to right bridge arm 233 and long left arm 211, respectively. In this embodiment, the length of the horizontal fold line 231l 2Is 250 microns; width of fold linew 2Is 4 microns; the spacing g2 of the horizontal fold line 231 is 11 microns. The horizontal fold line 231 and the vertical fold line 232 have the same width, i.e. the width of the fold linew 2。
Obviously, the left shoulder 235 spans north of the micro inductor 23 and the large capacitor 21. The left shoulders 235 are parallel to the inter-feed line segments 111 of the center feed line 11 and are spaced apart by the coplanar waveguide ground plane 14. The portion of the coplanar waveguide ground plane 14 between the left bridge shoulder 235 and the feeder inter-row segment 111 is a ground isolation segment 141. Left shoulder 235 and feeder segment 111The pitch does not exceed 10 microns. Width of ground isolation section 141c 1Not exceeding 4 microns. In this embodiment, the width of the ground isolation segment 141c 1Is 2 microns; insulation gap width between left shoulder 235 and ground isolation section 141c 2Is 2 microns; the width of the insulation gap between the ground isolation section 141 and the feeder line-to-line section 111 is the width of the insulation gap from the center feeder 14 to the edge of the center feeder slot 112g 1Is 2.5 microns, whereby the left shoulder 235 is spaced from the feed line segment 111 by a distance ofc 1、c 2Andg 1and the sum is 6.5 microns.
The antenna coupling detection unit 24, based on the superconducting niobium nitride bolometer, as shown in fig. 3, includes a low-pass filter ground plane 241, a superconducting niobium nitride thin film 242, a step-impedance low-pass filter 243, and a dual-slot antenna 244. The low-pass filtering ground plane 241 is provided with a central slot 2410 penetrating along the left end and the right end of the central line. That is, the central slot 2410 is disposed in a left-right orientation, and the central slot 2410 divides the low-pass filtered ground plane 241 into north and south portions. The center slot 2410 includes one antenna feed slot 2411 and two low pass filter slots 2412. The antenna feed line slot 2411 is located between two low pass filter slots 2412. A dual slot antenna 244 is disposed within antenna feed slot 2411 and includes two antenna feeds 2441 disposed along the centerline of the low pass filtered ground plane 241. The superconducting niobium nitride thin film 242, which is a superconducting niobium nitride thermionic bolometer, is disposed between the two antenna feed lines 2441, and has two ends connected to the two antenna feed lines 2441, respectively. The antenna feed line slot 2411 is connected with two cross slots 2442 crossing the antenna feed line slot 2411. The two crossed slots 2442 cross the two antenna feed lines 2441 respectively and are bilaterally symmetrical with the superconducting niobium nitride film 242 as the center, so that the superconducting niobium nitride film 242 is disposed at the center feed of the dual-slot antenna 244. The two low pass filter slots 2412 are bilaterally symmetrical with respect to the superconducting niobium nitride film 242.
Two impedance step low-pass filters 243 are respectively disposed in the two low-pass filter slots 2412. The two impedance step low-pass filters 243 are bilaterally symmetrical about the superconducting niobium nitride thin film 242. The stepped impedance low pass filter 243 includes two low impedance lines 2431 and two high impedance lines 2432. The two low impedance lines 2431 and the two high impedance lines 2432 are connected alternately, wherein the innermost high impedance line 2432 is butted against the antenna feed line 2441, and the outermost low impedance line 2431 connects the large capacitor 21, the small capacitor 22 and the micro-inductor 23. Specifically, the high impedance line 2432 is perpendicular to the short left arm 221 and the long left arm 211; the low impedance line 2431 at the outermost left end is connected with the long left arm 211, and is connected with the large capacitor 21 and the micro inductor 23 through the long left arm 211, that is, the left end of the antenna coupling detection unit 24 is connected with the long left arm 211 through the high impedance line 2432; the low impedance line 2431 at the outermost right end is connected to the short left arm 221, and thus to the small capacitor 22, i.e., the right end of the antenna coupling detection unit 24 is connected to the short left arm 221 through the high impedance line 2432. That is, the antenna coupling detection unit 24 has one end connected to one end of the large capacitor 21 and the other end connected to the other end of the large capacitor 21 after being connected in series to the small capacitor 22.
In the above structure of the antenna coupling detection unit 24 of the present embodiment, the width of the low-pass filter slot 2412g 4Is 50 microns; width of antenna feed slot 2411g 5Is 8 microns; length of the cross slot 2442g 6Is composed of136Micron size; width of the cross slot 2442l 8Is 4 microns; center distance of two crossed slots 2442l 7Is 78 microns; width of low impedance line 2431w 438 microns, length of the low impedance line 2431l 5Is 46 microns; spacing of two low impedance lines 2431l 6Is 46 microns; the resistance of the low impedance line 2431 is 29 ohms. The total resistance of the high impedance line 2432 is 80 ohms. The high impedance line 2432 and the antenna feed line 2441 have the same width and the same widthw 5Is 4 microns. The width of the superconducting niobium nitride film 242 is 2 micrometers, the length thereof is 0.2 micrometers, and the length direction of the superconducting niobium nitride film 242 is the length direction of the high-impedance line 2432.
In the above-described structure of the resonance detecting unit 2, the large capacitor 21, the small capacitor 22, the micro-inductor 23, and the antenna coupling detecting unit 24 constitute a resonance detecting circuit 200. The circuit connection relationship of the resonance detection circuit 200 is simplified to the structure shown in fig. 4. The resonance detection circuit 200 comprises an LC oscillating circuit formed by a large capacitor 21 and a small capacitor 22 connected in parallel and a micro inductor 23. I.e. the resonance frequency the resonance detecting unit 2 has. The resonant frequency is determined by the capacitance values of the large and small capacitors 21 and 22 and the inductance value of the micro-inductor 23.
Thus, those skilled in the art understand that the resonance frequency of the resonance detecting unit 2 depends mainly on the capacitance value of the large capacitor 21 and the inductance value of the micro inductor 23. The capacitance value of the large capacitor 21 can be adjusted by adjusting the left-right hand index of the large capacitor 21; the inductance value of the micro inductor 23 can be adjusted by adjusting the number of lines of the micro inductor 23. The terahertz signal receiving frequency of the antenna coupling detection unit 24 can be passedg 6，l 7Andl 8and (5) adjusting the parameters. In the array-type terahertz receiving device of the present embodiment, the resonance frequencies of the respective resonance detection units 2 are different, that is, the large capacitors 21 of the respective resonance detection units 2 have different left-right hand indexes, and/or the micro inductors 23 of the respective resonance detection units 2 have different numbers of bends. It should be noted that, if the number of fingers on the left and right of the large capacitor 21 is changed, the number of broken lines of the micro-inductor 23 needs to be adjusted accordingly, depending on the size and structure of the resonance detecting unit 2. In this embodiment, the resonant frequencies of the resonant detection units 2 are in an arithmetic progression, the difference between the resonant frequencies of the adjacent resonant detection units 2 is about 10MHz, and the resonant frequency of each resonant detection unit 2 is between 0.5 GHz and 2.5 GHz. The frequency of the terahertz signal received by the antenna coupling detection unit 24 is determined by the design of the designed double-slot antenna, in this embodiment, the center frequency of the antenna is 0.65 THz, and the bandwidth is 100 GHz.
It should be noted that the resonant frequency of the resonance detection unit 2 is between 0.5 GHz and 2.5GHz, which means that the resonant frequency wavelength of the resonance detection unit 2 is 83 mm to 600 mm. The size of each resonance detection unit 2 is in millimeter scale, for example, the lengths of the resonance detection units 2 in the left-right direction are the same, and the lengths of the resonance detection units 2 in the left-right direction are the samel 1Is 1012 μm, i.e. 1.012 mm. And the length of each resonance detection unit 2 in the north-south directionAre different from each other. This is because the length of each resonance detection unit 2 in the north-south direction depends on the left-right hand index of the large capacitor 21 and the number of broken lines of the micro-inductor 23, and since the left-right hand index of the large capacitor 21 and the number of broken lines of the micro-inductor 23 of each resonance detection unit 2 are different from each other, the length of each resonance detection unit 2 in the north-south direction is also different from each other. Although the lengths of the resonance detection units 2 in the north-south direction are different from each other, the maximum length of the resonance detection units 2 in the north-south direction does not exceed 4 mm. That is, the length and width dimensions of the resonance detecting unit 2 are less than one twentieth of the wavelength of the resonance frequency of the resonance detecting unit 2.
Further, other than the superconducting niobium nitride film 242, the other parts of the receiving circuit 100 are made of a second superconducting material having the same superconducting critical transition temperature. In addition to the superconducting niobium nitride film 242, the other parts of the receiving circuit 100, including the center feed line 11, the binding wire pad 121, the coplanar waveguide ground plane 14, the large capacitor 21, the small capacitor 22, the micro-inductor 23, the low-pass filter ground plane 241 and the step-impedance low-pass filter 243 in the antenna-coupled detecting unit 24, and the connection wiring between the large capacitor 21, the small capacitor 22, the micro-inductor 23, and the antenna-coupled detecting unit 24, are made of the second superconducting material. And the superconducting critical transition temperature of the second superconducting material is higher than the superconducting critical transition temperature of the superconducting niobium nitride film 242. In this embodiment, the superconducting niobium nitride film 242 is a niobium nitride film with a thickness of 3.0-5.0 nm, and the superconducting critical transition temperature is about 7K; the second superconducting material adopts a niobium nitride film with the thickness of 350 nanometers, and the superconducting critical transition temperature is about 13K. Those skilled in the art will appreciate that other superconducting materials such as NbTiN, YBCO, etc. may be used for the second superconducting material.
In the array terahertz receiving device of the present embodiment, the receiving circuit 100 is prepared by using magnetron sputtering in combination with mask etching on the substrate 19.
Furthermore, it is noted that the resonance detection unit 2 and the central feed line 11 are not directly connected but are isolated by a ground isolation section 141 of the coplanar waveguide ground plane 14. That is, the resonance detection unit 2 is surrounded by the coplanar waveguide ground plane 14, so that the resonance detection circuit 200 forms an independent closed circuit. The resonance detection unit 2 and the coplanar waveguide 110 constructed by the central feeder 11 transmit signals through the coupling relationship between the two. Since the resonance detection unit 2 and the center feeder 11 are isolated by the ground isolation section 141, the coupling relationship between the coplanar waveguide 110 and the resonance detection unit 2 exhibits a weak coupling relationship, that is, a coupling coefficient less than 1.
Example 2
The present embodiment exemplifies a readout apparatus, as shown in fig. 5, including a signal generation module 300, a signal processing module 400, and a signal detection apparatus 500. The signal detection device 500 comprises a low-temperature vacuum optical Dewar 5, and a Fresnel lens 52, a low-temperature attenuator 53, a low-temperature low-noise amplifier 54 and the array type terahertz receiving device 1 which are arranged in the low-temperature vacuum optical Dewar 5.
The low-temperature vacuum optical Dewar 5 is an internal vacuum tank body realized by a metal shell, the internal temperature is 4.2K, and the vacuum degree is 10-5 Pa. In order to enable the terahertz wave signal to enter the low-temperature vacuum optical Dewar 5, a terahertz transparent window 55 capable of transmitting terahertz waves is arranged on the wall of the tank body of the low-temperature vacuum optical Dewar 5. In this embodiment, the terahertz transparent window 55 is implemented by a mylar film and an optical filter 551 disposed inside the mylar film. The optical filter 551 is of Zitex-G105 material and filters infrared radiation having a cut-off frequency above 3 THz.
The array terahertz receiving device 1, that is, the array terahertz receiving device in embodiment 1, is installed in the low-temperature vacuum optical dewar 5 through an oxygen-free copper bracket, and faces the terahertz transparent window 55. The Fresnel lens 52 is arranged between the terahertz transparent window 55 and the array terahertz receiving device 1, so that terahertz waves entering the low-temperature vacuum optical Dewar 5 through the terahertz transparent window 55 can irradiate the Fresnel lens 52 to the array terahertz receiving device 1. In this embodiment, the fresnel lens 52 is a fresnel silicon lens array, is disposed on the array-type terahertz receiving device 1, and is mounted in the low-temperature vacuum optical dewar 5 through an oxygen-free copper bracket, and the array-type terahertz receiving device 1 is closely attached to the back plane of the fresnel silicon lens array.
Two feeder line joint parts 12 at two ends of a center feeder line 11 of the array-type terahertz receiving device 1 are respectively connected with a low-temperature attenuator 53 and a low-temperature low-noise amplifier 54. Specifically, the feeder terminal 12 at one end is connected to the output terminal of the low temperature attenuator 53, and the feeder terminal 12 at the other end is connected to the input terminal of the low temperature low noise amplifier 54 by the solder connection of the binding-wire pad 121. The input end of the low temperature attenuator 53 is used as the signal input end of the signal detection device 500; the output terminal of the low temperature low noise amplifier 54 is used as the signal output terminal of the signal detection device 500.
The signal generating module 300 comprises a dressing signal generator 3, an up-converter 32, a local vibration source 33 and a normal temperature adjustable attenuator 34. The dressing signal generator 3 comprises a plurality of single-frequency signal generators 31. In this embodiment, the dressing signal generator 3 comprisesN×MA single frequency signal generator 31. The frequency of the signal generated by each of the single frequency signal generators 31 is different. An output terminal of each single-frequency signal generator 31 is connected in parallel and then connected to one of the input terminals of the upper frequency converter 32. The other input end of the up-converter 32 is connected with a local oscillator 33. The output end of the up-converter 32 is connected to the signal input end of the signal detection device 500 through the normal temperature adjustable attenuator 34, that is, the output end of the up-converter 32 is connected to the input end of the low temperature attenuator 53 in the low temperature vacuum optical dewar 5 through the normal temperature adjustable attenuator 34. That is, the up-converter 32 has two input terminals connected to the local oscillator 33 and the single-frequency signal generator 31, and an output terminal connected to the low-temperature attenuator 53 through the normal-temperature adjustable attenuator 34.
The signal processing module 400 comprises a down-converter 42, a number of in-phase and quadrature mixers 41, a number of analog-to-digital converters 43, a number of digital signal processors 44 and a memory 45. Several in-phase and quadrature mixers 41 constitute an in-phase and quadrature mixer group 4. One input terminal of each in-phase and quadrature mixer 41 is connected in parallel to the output terminal of the down-converter 42. One of the input terminals of the down-converter 42 is connected to the signal output terminal of the signal detection apparatus 500 through the down-converter 42, that is, one of the input terminals of the down-converter 42 is connected to the output terminal of the low temperature low noise amplifier 54 in the low temperature vacuum optical dewar 5 through the down-converter 42. The other input end of the down converter 42 is connected with the local oscillator 33. The other input terminal of the in-phase and quadrature mixer 41 is connected to the other output terminal of the single-frequency signal generator 31. That is, the single-frequency signal generator 31 has two output terminals, one of which is connected to the up-converter 32, and the other of which is connected to the in-phase and quadrature mixer 41; the in-phase quadrature mixer 41 has two inputs, one of which is connected to the down-converter 42 and the other of which is connected to the mono-frequency signal generator 31. The in-phase and quadrature mixer 41 has two output terminals, which are respectively connected to the analog-to-digital converter 43 and the digital signal processor 44 through the two analog-to-digital converters 43. The digital signal processor 44 is connected to a memory 45. The digital signal processor 44 is used to calculate the square sum and the square root of the post-open for the data converted by the two analog-to-digital converters 43.
The in-phase quadrature mixer 41 is connected to the single frequency signal generator 31, meaning that the in-phase quadrature mixer 41 corresponds to the single frequency signal generator 31. That is, the number of in-phase and quadrature mixers 41 is the same as the number of single-frequency signal generators 31, and particularly in the present embodiment, the number of in-phase and quadrature mixers 41 is also the sameN×MAnd (4) respectively.
The working principle of the reading device of the embodiment is as follows:
the local oscillator 33 generates two paths of microwave signals with the same frequency, one path is input to the up converter 32, and the other path is input to the down converter 42. In the cosmetic signal generator 3, the cosmetic signal generator,N×Ma single frequency signal generator 31 for generatingN×MA frequency signal. The frequency signal of the single frequency signal generator 31 is divided into two paths, one path is input to the up converter 32, and the other path is input to the in-phase quadrature mixer 41. The up-converter 32 synthesizes the signal generated by the single-frequency signal generator 31 and the microwave signal generated by the local oscillation source 33 to generate a microwave signal with the same resonance frequency as that of each resonance detection unit 2 in the array-type terahertz receiving device 1. That is, the signal frequency generated by each single-frequency signal generator 31 corresponds to the resonance frequency of a certain resonance detection unit 2 in the array-type terahertz receiving device 1, that is, the single-frequency signal generators 31 correspond to the resonance detection units 2 one to one. Synthetically produced by up-converter 32Microwave signals are input to the array terahertz receiving device 1 in a frequency division multiplexing mode after being attenuated by the constant temperature adjustable attenuator 34 and the low temperature attenuator 53 in the low temperature vacuum optical Dewar 5; in the array-type terahertz receiving device 1, each resonance detection unit 2 resonates at its own resonance frequency through the coupling relationship between the center feeder 11 and the resonance detection unit 2. The terahertz waves incident into the low-temperature vacuum optical dewar 5 through the terahertz transparent window 55 are focused by the fresnel lens 52, and then received by the superconducting niobium nitride films 242 in the resonance detection units 2 in the array-type terahertz receiving device 1, and terahertz signals received by the superconducting niobium nitride films 242 are transmitted to the central feeder line 11 through the coupling relationship between the resonance detection units 2 and the central feeder line 11, and then are amplified by the low-temperature low-noise amplifier 54 and output to the down converter 42. The signals received by the down converter 42 are signals output by the array-type terahertz receiving device through the low-temperature low-noise amplifier 54, that is, signals output by the signal detecting device 500, and include terahertz response signals received by the superconducting niobium nitride film 242 of each resonant detecting unit 2 and amplified by the low-temperature low-noise amplifier 54, and microwave signals input to the array-type terahertz receiving device 1 through the up converter 32, the normal-temperature adjustable attenuator 34, and the low-temperature attenuator 53 and amplified by the low-temperature low-noise amplifier 54. I.e., the signals received by the downconverter 42 are frequency division multiplexed signals. The down converter 42 outputs the signal output from the signal detection device 500 after dividing the local oscillation signal by referring to the frequency of the signal generated by the local oscillation source 33. That is, the signal output by the down converter 42 is a frequency division multiplexing signal composed of the signal generated by the single frequency signal generator 31 and the terahertz response signal received by the superconducting niobium nitride film 242 in each resonant detection unit 2. These signals are input to the in-phase and quadrature mixer 41 for demodulation. The in-phase and quadrature mixer 41 demodulates the signal generated by its corresponding single frequency signal generator 31 as its local oscillation signal. The in-phase and quadrature mixer 41 demodulates two orthogonal signals, which are input to two analog-to-digital converters 43, respectively. The analog-to-digital converter 43 samples the analog signal and converts the analog signal into amplitude data. The amplitude data converted by the analog-to-digital converter 43 is input to the digital signal processor 44. Number ofThe signal processor 44 squares and calculates the amplitude data input by the two analog-to-digital converters 43, and then opens the square root to obtain the corresponding final terahertz response signal amplitude data, and then stores the terahertz response signal amplitude data in the memory 45. It is noted that the in-phase quadrature mixer 41 corresponds to the single frequency signal generator 31, and the single frequency signal generator 31 corresponds to the resonance detecting unit 2 one to one. That is, the in-phase and quadrature mixers 41 correspond to the resonance detecting units 2 one to one. The in-phase quadrature mixer 41 demodulates two mutually orthogonal signals corresponding to the terahertz waves received by the corresponding resonance detection unit 2. That is, the terahertz response signal amplitude data output by the digital signal processor 44 corresponds to the terahertz wave received by the resonance detection unit 2. That is, demodulation by the in-phase and quadrature mixer 41 functions as frequency division multiplexing.
In this embodiment, the digital signal processor 44 calculates the amplitude data of the terahertz response signal obtained after the processing, and outputs the amplitude data to the memory 45 for storage. Those skilled in the art will understand that the amplitude data of the terahertz response signal obtained after the calculation processing by the digital signal processor 44 can also be output through a specific interface.
In addition, in the present embodiment, the digital signal processors 44 are dedicated to calculating the square sum and the square root, and each digital signal processor 44 corresponds to the in-phase and quadrature mixer 41. Those skilled in the art will appreciate that these digital signal processors 44 may also be implemented by general purpose microprocessors, in which case each general purpose microprocessor may correspond to multiple in-phase and quadrature mixers 41.
It should be noted that in this embodiment, although N is 14 and M is 14, there is 196 resonance detection units 2 in total. It is understood by those skilled in the art that when N and M are 1, i.e. the single resonance detection unit 2, also independently detect. In this case, the comb signal generator 3 only needs one single-frequency signal generator 31, and the in-phase and quadrature mixers 41 in the in-phase and quadrature mixer group 4 only need one. Obviously, terahertz imaging cannot be performed at this time, and only simple terahertz detection can be performed.
Claims (10)
1. An array terahertz receiving device is characterized by comprising a receiving circuit (100) arranged on a substrate (19); the receiving circuit (100) comprises a coplanar waveguide (110), a resonance detection unit (2) and a coplanar waveguide ground plane (14); the coplanar waveguide (110) comprises a center feeder (11) and a feeder joint part (12) connected to the tail end of the center feeder (11); the central feeder (11), the feeder joint part (12) and the resonance detection unit (2) are surrounded by a coplanar waveguide ground plane (14) and are insulated and separated from the coplanar waveguide ground plane (14); the resonance detection units (2) are N multiplied by M and are arranged into a resonance detection unit array (130) according to N multiplied by M rows and columns; the central feeder (11) is arranged in a zigzag manner and is inserted among the rows or the columns of the resonance detection unit array (130) back and forth; the resonance detection unit (2) comprises a large capacitor (21), a small capacitor (22), a micro-inductor (23) and an antenna coupling detection unit (24); the large capacitor (21) and the small capacitor (22) are interdigital capacitors formed by left and right finger staggered interdigital arranged on the surface of the substrate (19); the capacitance value of the large capacitor (21) is at least 50 times that of the small capacitor (22); the micro inductor (23) is a zigzag inductor formed by repeatedly routing wires arranged on the surface of the substrate (19) in a zigzag manner; the antenna coupling detection unit (24) comprises a low-pass filtering ground plane (241), a superconducting niobium nitride film (242), a step impedance low-pass filter (243) and a double-slot antenna (244); the low-pass filtering ground plane (241) is provided with a central slot (2410) which penetrates through the two ends of the central line; the central slot (2410) comprises an antenna feeder slot (2411) and two low-pass filter slots (2412); the antenna feeder line slot (2411) is positioned between the two low-pass filter slots (2412); a dual slot antenna (244) disposed within an antenna feed slot (2411), including two antenna feeds (2441) disposed along a centerline of the low pass filtered ground plane (241); the superconducting niobium nitride film (242) is arranged between the two antenna feed lines (2441), and two ends of the superconducting niobium nitride film are respectively connected with the two antenna feed lines (2441); the antenna feed line slot (2411) is connected with two crossed slots (2442) crossed with the antenna feed line slot (2411); the two crossed slot gaps (2442) are crossed with the two antenna feed lines (2441) respectively and are bilaterally symmetrical by taking the superconducting niobium nitride film (242) as a center, so that the superconducting niobium nitride film (242) is arranged at the center feed position of the double-slot antenna (244); the two low-pass filter slots (2412) are symmetrical by taking the superconducting niobium nitride film (242) as the center; two stepped impedance low-pass filters (243) are respectively arranged in the two low-pass filtering slots (2412); the two step impedance low-pass filters (243) are bilaterally symmetrical with the superconducting niobium nitride film (242) as the center; the stepped impedance low pass filter (243) comprises two low impedance lines (2431) and two high impedance lines (2432); the two low impedance lines (2431) and the two high impedance lines (2432) are connected in an interphase mode, wherein the innermost high impedance line (2432) is butted with the antenna feed line (2441), and the outermost low impedance line (2431) is connected with the large capacitor (21), the small capacitor (22) and the micro-inductor (23); two ends of the large capacitor (21) are respectively connected with two ends of the micro inductor (23); one end of the antenna coupling detection unit (24) is connected with one end of the large capacitor (21), and the other end of the antenna coupling detection unit is connected with the other end of the large capacitor (21) after being connected with the small capacitor (22) in series; the length and width of the resonance detection unit (2) are less than one twentieth of the wavelength of the resonance frequency of the resonance detection unit (2); wherein N and M are greater than or equal to 1.
2. The array terahertz receiving device of claim 1, wherein the large capacitor (21) comprises a long left arm (211) and a long right arm (212) which are parallel to each other; the long left arm (211) is connected with a plurality of long left fingers (213); the long right arm (212) is connected with a plurality of long right fingers (214); the long left finger (213) and the long right finger (214) are perpendicular to the long left arm (211) and the long right arm (212); the long left fingers (213) and the long right fingers (214) are alternately staggered between the long left arm (211) and the long right arm (212); the small capacitor (22) comprises a short left arm (221) and a short right arm (222) which are parallel to each other; the short left arm (221) is connected with a plurality of short left fingers (223); the short right arm (222) is connected with a plurality of short right fingers (224); short left finger (223) and short right finger (224) are perpendicular to short left arm (221) and short right arm (222); short left fingers (223) and short right fingers (224) are arranged between the short left arm (221) and the short right arm (222) in an alternating manner; the short right arm (222) and the long right arm (212) are collinear; the antenna coupling detection unit (24) is arranged between the short left arm (221) and the long left arm (211) and is positioned in the south of the long left finger (213) and the long right finger (214); the high impedance line (2432) is perpendicular to the short left arm (221) and the long left arm (211); the low impedance line (2431) on the outermost side of the left end of the antenna coupling detection unit (24) is connected with the long left arm (211), and the low impedance line (2431) on the outermost side of the right end is connected with the short left arm (221); the micro inductor (23) is arranged on the left side of the large capacitor (21) and comprises a plurality of horizontal folding lines (231) and vertical folding lines (232); the horizontal broken line (231) is vertical to the long left arm (211); the vertical folding line (232) is parallel to the long left arm (211); the horizontal folding lines (231) are arranged at equal intervals along the direction parallel to the long left arm (211), and the left end and the right end of each horizontal folding line are respectively connected with two adjacent horizontal folding lines (231) through vertical folding lines (232); wherein the most northern horizontal fold line (231) is connected with the long right arm (212) through a left bridge shoulder (235); the southern horizontal broken line (231) is connected with the long left arm (211) through a right bridge arm (233) and a right bridge shoulder (234); the right arm (233) is parallel to the long left arm (211); a right bridge shoulder (234) perpendicular to the long left arm (211) and collinear with the north-most long left finger (213); two ends of the right bridge shoulder (234) are respectively connected with the right bridge arm (233) and the long left arm (211).
3. The array terahertz receiving device of claim 2, wherein the left bridge shoulder (235) is parallel to the feeder inter-row section (111) of the center feeder (11) and separated by a coplanar waveguide ground plane (14); the part of the coplanar waveguide ground plane (14) between the left bridge shoulder (235) and the feeder line-to-line section (111) is a ground isolation section (141); the distance between the left bridge shoulder (235) and the feeder line interval section (111) is not more than 10 microns; the ground isolation segment (141) has a width of no more than 4 microns.
4. The array terahertz receiving device as claimed in claim 1, wherein the large capacitors (21) of the resonance detection units (2) have different left-right hand indexes, so that the resonance frequencies of the resonance detection units (2) are different from each other; the resonance frequencies of the resonance detection units (2) are in an arithmetic progression.
5. The array terahertz receiving device according to claim 1, wherein except the superconducting niobium nitride film (242), other parts of the receiving circuit (100) are made of a second superconducting material having the same superconducting critical transition temperature, and the superconducting critical transition temperature of the second superconducting material is higher than that of the superconducting niobium nitride film (242).
6. The array terahertz receiving device according to claim 5, wherein the thickness of the superconducting niobium nitride film (242) is 3.0-5.0 nm; the second superconducting material adopts a niobium nitride film with the thickness of 350 nanometers.
7. A reading apparatus comprising a cosmetic signal generator (3), an in-phase and quadrature mixer (41) and a signal detection means (500); the signal detection device (500) comprises a low-temperature vacuum optical Dewar (5) and a Fresnel lens (52), a low-temperature attenuator (53), a low-temperature low-noise amplifier (54) which are arranged in the low-temperature vacuum optical Dewar (5), and the array type terahertz receiving device as claimed in claim 1 or 2 or 3 or 4 or 5 or 6; a terahertz transparent window (55) is arranged on the low-temperature vacuum optical Dewar (5); the array terahertz receiving device is right opposite to the terahertz transparent window (55), and the Fresnel lens (52) is arranged between the terahertz transparent window (55) and the array terahertz receiving device, so that terahertz waves entering the low-temperature vacuum optical Dewar (5) through the terahertz transparent window (55) can irradiate the array terahertz receiving device; two ends of a central feeder (11) of the array terahertz receiving device are respectively connected with feeder joint parts (12); the feeder joint part (12) at one end is connected with the output end of the low-temperature attenuator (53), and the feeder joint part (12) at the other end is connected with the input end of the low-temperature low-noise amplifier (54); the dressing signal generator (3) comprises a plurality of single-frequency signal generators (31); the output ends of the single-frequency signal generators (31) are connected in parallel and then connected with an upper frequency converter (32), and the output ends are connected with the input end of the low-temperature attenuator (53) in the low-temperature vacuum optical Dewar (5) through the upper frequency converter (32); a plurality of in-phase and quadrature mixers (41); the input ends of a plurality of in-phase and quadrature mixers (41) are connected in parallel and then connected with a down converter (42), and the output end of the low-temperature low-noise amplifier (54) in the low-temperature vacuum optical Dewar (5) is connected through the down converter (42); the up-converter (32) and the down-converter (42) are connected with a local vibration source (33); the up-converter (32) is used for synthesizing a signal generated by the single-frequency signal generator (31) and a signal generated by the local vibration source (33) so as to generate an input signal with the same resonance frequency as that of each resonance detection unit (2) in the array type terahertz receiving device; the down converter (42) is used for decomposing local oscillation signals of the array terahertz receiving device through signals output by the low-temperature low-noise amplifier (54) according to the frequency of the signals generated by the local oscillation source (33); the number of the in-phase and quadrature mixers (41) is the same as the number of the single-frequency signal generators (31), so that the single-frequency signal generators (31) correspond to the in-phase and quadrature mixers (41) one to one; each single-frequency signal generator (31) is connected with the corresponding in-phase and quadrature mixer (41).
8. A reading device as claimed in claim 7, characterized in that the comb signal generator (3) comprisesN×MA single frequency signal generator (31); the in-phase and quadrature mixer (41) hasN×MA plurality of; the signal frequencies generated by the single-frequency signal generators (31) are different, so that the signal frequencies synthesized and output by the up-converter (32) correspond to the array terahertz receiving device respectivelyN×MThe resonance frequency of the resonance detection unit (2).
9. A reading apparatus according to claim 7, further comprising an ambient temperature adjustable attenuator (34) arranged between the up-converter (32) and the low temperature attenuator (53).
10. A reading apparatus as claimed in claim 7, further comprising a plurality of analog-to-digital converters (43) and a plurality of digital signal processors (44); two outputs of the in-phase and quadrature mixer (41) are respectively connected with two analog-to-digital converters (43) and are connected with a digital signal processor (44) through the two analog-to-digital converters (43); the digital signal processor (44) is used for calculating square sum and square root of last opening of the data converted by the two analog-to-digital converters (43).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011415931.XA CN112540056B (en) | 2020-12-07 | 2020-12-07 | Array terahertz receiving device and reading device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011415931.XA CN112540056B (en) | 2020-12-07 | 2020-12-07 | Array terahertz receiving device and reading device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112540056A true CN112540056A (en) | 2021-03-23 |
| CN112540056B CN112540056B (en) | 2021-11-16 |
Family
ID=75016203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011415931.XA Active CN112540056B (en) | 2020-12-07 | 2020-12-07 | Array terahertz receiving device and reading device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112540056B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113340841A (en) * | 2021-06-01 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Terahertz ultralow-temperature superconducting detection system and reading circuit thereof |
| CN114428066A (en) * | 2022-01-28 | 2022-05-03 | 中北大学 | Terahertz biosensor based on ELC resonator and micropores |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN104006888A (en) * | 2013-02-21 | 2014-08-27 | 精工爱普生株式会社 | Terahertz wave detection device, camera, imaging device, and measuring device |
| CN105796056A (en) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微***与信息技术研究所 | Terahertz medical imager based on metamaterials and manufacturing method thereof |
| CN110455410A (en) * | 2019-08-28 | 2019-11-15 | 南京大学 | A kind of array resonant mode Terahertz receiver and its terahertz light spectrometer device |
-
2020
- 2020-12-07 CN CN202011415931.XA patent/CN112540056B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN104006888A (en) * | 2013-02-21 | 2014-08-27 | 精工爱普生株式会社 | Terahertz wave detection device, camera, imaging device, and measuring device |
| CN105796056A (en) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微***与信息技术研究所 | Terahertz medical imager based on metamaterials and manufacturing method thereof |
| CN110455410A (en) * | 2019-08-28 | 2019-11-15 | 南京大学 | A kind of array resonant mode Terahertz receiver and its terahertz light spectrometer device |
Non-Patent Citations (3)
| Title |
|---|
| SIMON DOYLE ET AL: "A Lumped Element Kinetic Inductance Device for Detection of THz Radiation", 《2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND THE 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS》 * |
| 王道伟: "太赫兹超导热电子混频器特性研究", 《中国优秀博硕士学位论文全文数据库（硕士） 基础科学辑》 * |
| 石晴: "太赫兹超导动态电感探测器的特性研究", 《中国优秀博硕士学位论文全文数据库（硕士） 基础科学辑》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113340841A (en) * | 2021-06-01 | 2021-09-03 | 苏州锐心观远太赫兹科技有限公司 | Terahertz ultralow-temperature superconducting detection system and reading circuit thereof |
| CN113340841B (en) * | 2021-06-01 | 2022-10-11 | 苏州锐心观远太赫兹科技有限公司 | Terahertz ultralow-temperature superconducting detection system and reading circuit thereof |
| CN114428066A (en) * | 2022-01-28 | 2022-05-03 | 中北大学 | Terahertz biosensor based on ELC resonator and micropores |
| CN114428066B (en) * | 2022-01-28 | 2023-08-04 | 中北大学 | Terahertz biosensor based on ELC resonator and micropore |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112540056B (en) | 2021-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112540056B (en) | Array terahertz receiving device and reading device thereof | |
| JP5930494B2 (en) | Monolithically integrated antenna and receiver circuit | |
| US4573212A (en) | Integrated receiver antenna device | |
| US5933001A (en) | Method for using a wideband, high linear dynamic range sensor | |
| US7135848B1 (en) | Highly integrated radiometer sensor cell | |
| US6943742B2 (en) | Focal plane array for THz imager and associated methods | |
| CN107209055B (en) | Bolometer type THz detector | |
| Trichopoulos et al. | A novel approach for improving off-axis pixel performance of terahertz focal plane arrays | |
| US5844407A (en) | Method using squid array for improving the sensitivity of a slot antenna | |
| US20050179611A1 (en) | Two-dimensional dual-frequency antenna and associated down-conversion method | |
| US7812958B2 (en) | Interferential spectroscopy detector and camera | |
| JP6259972B2 (en) | Microwave receiving antenna and microwave receiving antenna array | |
| CN110455410B (en) | Array resonant terahertz receiver and terahertz spectrometer device thereof | |
| CN103217587A (en) | Detecting device, detector, and imaging apparatus using the same | |
| CN111141702A (en) | High-frequency resolution arrayed terahertz imaging system based on detection comb principle | |
| Schlaerth et al. | The status of music: A multicolor sub/millimeter mkid instrument | |
| Groppi et al. | SuperCam: A 64 pixel heterodyne array receiver for the 350 GHz atmospheric window | |
| Barron et al. | Integrated electrical properties of the frequency multiplexed cryogenic readout system for POLARBEAR/Simons Array | |
| Ling et al. | A wide-band monolithic quasi-optical power meter for millimeter-and submillimeter-wave applications | |
| US20230208046A1 (en) | Portable low-mass and low-power microwave radiometer with radiometer antenna and radiometer electronics | |
| Park | Fully integrated silicon terahertz transceivers for sensing and communication applications | |
| Boppel et al. | Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation | |
| CN117030014A (en) | Terahertz antenna detection unit, resonance detection unit and array type detection device | |
| Yamaguchi et al. | Development of microwave imaging reflectometry in large helical device | |
| Kim et al. | Design of 1THz band 4array on-chip one-sided directional antenna |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |