CN112536421A - Method for improving performance stability of thin-wall single crystal high-temperature alloy casting - Google Patents
Method for improving performance stability of thin-wall single crystal high-temperature alloy casting Download PDFInfo
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- CN112536421A CN112536421A CN202011245770.4A CN202011245770A CN112536421A CN 112536421 A CN112536421 A CN 112536421A CN 202011245770 A CN202011245770 A CN 202011245770A CN 112536421 A CN112536421 A CN 112536421A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/02—Sand moulds or like moulds for shaped castings
- B22C9/04—Use of lost patterns
- B22C9/043—Removing the consumable pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/12—Treating moulds or cores, e.g. drying, hardening
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
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Abstract
The invention discloses a method for improving performance stability of a thin-wall single-crystal high-temperature alloy casting, and belongs to the technical field of single-crystal high-temperature alloy preparation. The method comprises the steps of firstly preparing single crystal alloy seed crystals, adding the seed crystals into a shell of a single crystal casting before the shell is placed into a directional solidification furnace, and improving the performance stability of the casting by controlling the orientation of secondary dendrites of the single crystal thin-wall casting. The invention adopts a simple and feasible method, and improves the performance stability of the single crystal thin-wall part on the premise of basically keeping the original single crystal casting manufacturing process.
Description
Technical Field
The invention relates to the technical field of single crystal high-temperature alloy preparation, in particular to a method for improving performance stability of a thin-wall single crystal high-temperature alloy casting.
Background
In order to meet the ever-increasing engine efficiency and thrust-weight ratio, the turbine inlet temperature of advanced aircraft engines is increasing, which requires that the turbine blades, which are critical components of the engine, must withstand higher temperatures. Advanced turbine blades are mostly realized by adopting a nickel-based single crystal superalloy with higher temperature bearing capacity and a complex cooling structure. At present, most of single crystal blade structures are thin-wall porous structures, the wall thickness reaches 0.5mm magnitude order, and hundreds of air film holes are distributed on the blade wall. The aperture of the air film hole reaches-0.4 mm. The complex structure greatly improves the cooling effect of the blade, thereby improving the temperature bearing capacity of the blade.
In the analysis process of the single crystal blades, the performances of the single crystal blades produced in the same batch are not completely the same, and the dispersion degree is large. Under the same environmental conditions, some of the single crystal blades used for the same time are damaged locally, while some of the blades are kept intact. Because the single crystal blade is mostly applied to advanced aeroengines, each engine has hundreds of blades, and any blade has a problem, which causes irrecoverable fatal disasters, how to improve the performance stability of the single crystal casting becomes a key problem to be solved urgently.
Disclosure of Invention
The invention aims to provide a method for improving the performance stability of a thin-wall single crystal high-temperature alloy casting, which improves the performance stability of the single crystal casting on the premise of basically keeping the original manufacturing process of the single crystal casting, thereby ensuring the safe and stable service of equipment using the part.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for improving performance stability of a thin-wall single-crystal high-temperature alloy casting comprises the steps of firstly preparing single-crystal alloy seed crystals, adding the seed crystals into a shell of the single-crystal casting before the shell is placed into a directional solidification furnace, and improving performance stability of the casting by controlling orientation of secondary dendrites of the single-crystal thin-wall casting. The method specifically comprises the following steps:
(1) preparing a single crystal thin-wall casting wax mold, making two secondary dendritic crystal orientation direction control convex marks on the crystallization segment wax mold of the thin-wall casting, enabling the connecting line of the two convex marks to be parallel to the preferred secondary dendritic crystal orientation, and ensuring that the convex marks are still clear after the shell is formed;
(2) preparing single crystal high-temperature alloy seed crystals:
preparing a single crystal test bar by adopting a crystal selection method, cutting off the top end and a transition section of the test bar, cutting a sample from the middle part of the test bar, determining the deviation of the [001] orientation of the sample of the test bar and the axial orientation of the test bar by adopting an electron back scattering diffraction method, determining the orientation distribution of unit lattices, cutting seed crystals of 10mm multiplied by 30mm according to the orientation distribution condition of the unit lattices, and carefully polishing and cleaning the surfaces of the seed crystals for later use;
(3) shell making, dewaxing and shell roasting:
coating surface layer slurry and reinforcing layer slurry on the wax pattern in sequence, and then dewaxing the prepared shell by using a high-pressure dewaxing kettle; roasting the dewaxed shell in an electric furnace for later use;
(4) seed crystal placement:
controlling the convex marks according to the direction of the secondary orientation on the shell, and determining the orientation arrangement scheme of the secondary dendrite crystal of the seed crystal (the connecting line of the two convex marks is parallel to the orientation of the secondary dendrite crystal of the seed crystal); the orientation deviation of the secondary dendrite is 0 to +/-5 degrees, and the secondary dendrite is fixed by slurry;
(5) directional solidification:
and (3) putting the mould shell with the seed crystal placed in the step (6) into a directional solidification furnace, wherein in the directional solidification process, the temperature of the heating furnace is 1500-1580 ℃, the heat preservation time of the mould shell is 10-20 min, the pouring temperature is 1500-1580 ℃, and the drawing speed is 2-8 mm/min.
In the step (1), the wax mold comprises a crystallization section, a transition section, a casting, a pouring channel, a pouring system and a pouring cup, and can be designed according to the specific size and the overall dimension of the casting.
In the step (2), the seed cutting requirements are as follows: two 10mm side lengths of the seed crystal are respectively oriented along [010] and [100], and a 30mm side length is oriented along [001 ].
In the step (3), the process of making the shell on the wax pattern comprises the following steps: coating 1-2 layers of surface layer slurry on a wax pattern, controlling the viscosity to be 35-40s, and sanding to obtain EC95 sand; then coating and hanging 3-6 layers of reinforcing layer slurry, controlling the viscosity to be 12-18s, and sanding to obtain EC95 sand; and finally, coating a layer of reinforcing layer slurry, controlling the viscosity to be 12-18s, and not sanding.
In the step (3), when the prepared shell is dewaxed by a high-pressure dewaxing kettle, the pressure is controlled to be 0.6-0.7 MPa, the temperature is 165-170 ℃, and the dewaxing time is 15-20 minutes.
In the step (3), the roasting process of the shell is as follows: the shell is flatly placed on a bottom plate of an electric furnace, the roasting temperature is 900 +/-20 ℃, the time is more than or equal to 2 hours, the shell is allowed to enter the furnace at the temperature lower than 500 ℃, and the temperature is allowed to be reduced by opening a furnace door after the heat preservation time.
The design mechanism of the invention is as follows:
the nickel-based single crystal superalloy has a face-centered cubic f.c.c. structure and has anisotropic characteristics, the [001] orientation is the preferred growth direction of face-centered cubic crystals and has the lowest Young modulus, namely, a smaller deformation amount, so that the axial direction of a casting is generally controlled to be along the [001] orientation in the manufacturing process of a single crystal casting, and the secondary dendrite orientation (the direction perpendicular to a blade body) is not artificially controlled. The research of the invention finds that the secondary dendrite orientation has obvious influence on the performance of the single crystal thin-walled part. The research result on the room temperature tensile property and the durability of the thin-wall single crystal casting shows that the performance of the thin-wall single crystal casting with the secondary dendrite orientation [011] is lower than that of the thin-wall single crystal casting with the secondary dendrite orientation [010 ]. And thermal fatigue test data show that the thermal fatigue crack initiation and propagation of the secondary dendrite orientation [010] casting around the hole is slower than that of the secondary dendrite orientation [011] casting, so that the performance of the single crystal thin-wall casting can be further improved by controlling the secondary dendrite orientation, and the performance stability of the single crystal blade is improved.
In the preparation process of the thin-wall single crystal casting, the secondary dendritic crystal orientation of the single crystal casting is controlled by adopting a seed crystal method, the starting condition of a sliding system in the service process of the casting caused by the orientation difference of the secondary dendritic crystal of the alloy is improved, the difference of thermal stress of each orientation caused by the anisotropic characteristic of the single crystal is reduced, and the influence of the anisotropic characteristic of the single crystal is reduced to the minimum degree, so that the performance stability of the thin-wall single crystal casting is improved.
The invention has the following advantages and beneficial effects:
the invention adopts a simple and feasible method, seed crystals are added before the thin-wall single crystal casting is directionally solidified, the orientation of the secondary dendrites is controlled, and the single crystal thin-wall casting is prepared. The invention improves the performance stability of the single crystal thin-wall part on the premise of basically keeping the original manufacturing process of the single crystal casting.
Drawings
FIG. 1 is a schematic view of a secondary dendrite sample orientation; wherein: (a) and (b) and (c) are different secondary dendrite orientation samples.
FIG. 2 is a cross-sectional structure of a thin-walled casting with different secondary dendrite orientations obtained by controlling the secondary dendrite orientation; wherein: (a) the orientation of the secondary dendrite is 0 degree relative to the surface of the thin-wall part; (b) the orientation of the secondary dendrite is 20 degrees relative to the surface of the thin-wall part; (c) the secondary dendrite orientation is 45 ° to the thin wall surface.
FIG. 3 is a comparison of thermal fatigue crack propagation at room temperature-1100 ℃ for a thin-walled part with preferred secondary dendrite orientation and random secondary dendrite orientation;
FIG. 4 is a comparison of durability and data dispersion for thin-walled parts with preferred secondary dendrite orientation and random secondary dendrite orientation.
FIG. 5 is a comparison of the room temperature tensile yield strength of preferred orientation versus random orientation versus data dispersion.
Detailed Description
For a further understanding of the present invention, the following description is given in conjunction with the examples which are set forth to illustrate, but are not to be construed to limit the present invention, features and advantages.
Example 1
This example is the preparation of a 0.5mm thick single crystal thin wall casting, the procedure is as follows:
(1) preparing a wax mold of a single crystal thin-wall casting:
the wax mold comprises a crystallization section, a transition section, a casting, a pouring gate, a pouring system, a pouring cup and the like. The design can be carried out according to the specific size and the external dimension of the casting.
Two secondary oriented direction control convex marks (two bulges) are made on a crystallization segment wax mould of the thin-wall casting, the connecting line of the two convex marks is parallel to the preferred secondary dendrite orientation, and the marks are still clear after the shell is formed.
(2) Preparing single crystal high-temperature alloy seed crystals:
preparing a single crystal test bar by adopting a crystal selection method, cutting off the top end and a transition section of the test bar, sampling from the middle part of the test bar, determining the deviation between the [001] orientation of the test bar and the axial orientation of the test bar by adopting an electron back scattering diffraction method, determining the orientation distribution of unit lattices, cutting seed crystals of 10mm multiplied by 30mm (the side length of 10mm is oriented along [010] and [100], the side length of 30mm is oriented along [001 ]) according to the orientation distribution condition of the unit lattices, and ensuring that the side of 10mm is parallel to the orientation of secondary dendrite crystals. The surface of the seed crystal is carefully polished and cleaned for standby.
(3) Preparing a shell:
coating 1-2 layers of surface layer slurry on the wax pattern, controlling the viscosity to be 35-40s, and sanding to be EC95 sand;
then coating 3-6 layers of reinforcing layer slurry, controlling the viscosity to be 12-18s, and sanding to obtain EC95 sand;
finally, coating and hanging 1 layer of reinforcing layer slurry, controlling the viscosity to be 12-18s, and not sanding.
(4) Dewaxing:
dewaxing the prepared shell by using a high-pressure dewaxing kettle, controlling the pressure at 0.7MPa, the temperature at 170 ℃ and the dewaxing time at 20 minutes.
(5) Roasting the shell:
the shell is horizontally placed on a bottom plate of an electric furnace, and the roasting temperature is as follows: the temperature is 900 +/-20 ℃, the time is more than or equal to 2 hours, the furnace is allowed to enter at the temperature of less than 500 ℃, and the temperature is allowed to be reduced by opening the furnace door after the heat preservation time.
(6) Seed crystal placement:
and controlling the connecting line direction of the convex marks according to the direction of secondary orientation on the shell, dividing 30 groups of shells into three groups, respectively placing seed crystals according to different placing modes, enabling the secondary dendrite orientation (10mm side direction) of the seed crystals to respectively form 0 degrees, 20 degrees and 45 degrees relative to the surface of the thin-wall part, and enabling the deviation of the secondary dendrite orientation and the design to be less than 5 degrees and fixing by using slurry. FIG. 1 is a schematic view of seed placement for different secondary dendrite orientations.
(7) Directional solidification:
and (3) putting the formwork into a directional solidification furnace, wherein the temperature of the heating furnace is 1550 ℃, the heat preservation time of the formwork is 10min, the casting temperature is 1550 ℃, and the drawing speed is 3mm/min in the directional solidification process.
And (3) after completely carrying out heat treatment on the prepared three groups of thin-wall single crystals, processing thin-wall tensile samples, carrying out tensile test, and carrying out statistics on the average value of the yield strength of the preferred orientation samples and the data dispersion degree, and comparing the result with the result of a random sample.
FIG. 2 is a cross-sectional structure of a thin-walled casting with different secondary dendrite orientations obtained by controlling the secondary dendrite orientations, wherein the secondary dendrite orientations are respectively 0 degrees, 20 degrees and 45 degrees relative to the surface of the thin-walled casting.
FIG. 3 is a comparison of thermal fatigue crack propagation at room temperature-1100 ℃ for a thin-walled part with preferred secondary dendrite orientation and random secondary dendrite orientation.
FIG. 4 is a comparison of durability and data dispersion for thin-walled parts with preferred secondary dendrite orientation and random secondary dendrite orientation.
FIG. 5 is a comparison of the room temperature tensile yield strength of preferred orientation versus random orientation versus data dispersion.
The measurement and analysis result shows that: the yield strength of the sample with preferred orientation is 8% higher than that of the random orientation, and the data dispersity of the sample with preferred orientation is 70% lower than that of the random orientation. Analysis of the results of the endurance test on all samples showed: the endurance life of the sample with preferred orientation is improved by 6% compared with the random orientation, and the data dispersity is reduced by 52% compared with the random orientation.
Claims (7)
1. A method for improving the performance stability of a thin-wall single crystal superalloy casting is characterized by comprising the following steps: the method comprises the steps of firstly preparing single crystal alloy seed crystals, adding the seed crystals into a shell of a single crystal casting before the shell is placed into a directional solidification furnace, and improving the performance stability of the casting by controlling the orientation of secondary dendrites of the single crystal thin-wall casting.
2. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 1, wherein: the method specifically comprises the following steps:
(1) preparing a wax mold of a single crystal thin-wall casting, making two secondary dendritic crystal oriented direction control protruding marks on the wax mold of a crystallization section of the thin-wall casting, and enabling the connecting line direction of the two protruding marks to be parallel to the preferred secondary dendritic crystal direction of the casting, wherein the marks ensure that the wax mold is still clear after a shell is formed;
(2) preparing single crystal high-temperature alloy seed crystals:
preparing a single crystal test bar by adopting a crystal selection method, cutting off the top end and a transition section of the test bar, cutting a sample from the middle part of the test bar, determining the deviation of the [001] orientation of the sample of the test bar and the axial orientation of the test bar by adopting an electron back scattering diffraction method, determining the orientation distribution of unit lattices, cutting seed crystals of 10mm multiplied by 30mm according to the orientation distribution condition of the unit lattices, and carefully polishing and cleaning the surfaces of the seed crystals for later use;
(3) shell making, dewaxing and shell roasting:
coating surface layer slurry and reinforcing layer slurry on the wax pattern in sequence, and then dewaxing the prepared shell by using a high-pressure dewaxing kettle; roasting the dewaxed shell in an electric furnace for later use;
(4) seed crystal placement:
controlling the convex marks according to the direction of the secondary orientation on the shell, and confirming the orientation arrangement scheme of the secondary dendrite crystal of the seed crystal; the orientation deviation of the secondary dendrite is 0 to +/-5 degrees; and fixing with slurry;
(5) directional solidification:
and (3) putting the mould shell with the seed crystal placed in the step (4) into a directional solidification furnace, wherein the temperature of the heating furnace is 1500-1580 ℃, the heat preservation time of the mould shell is 10-20 min, the pouring temperature is 1500-1580 ℃, and the drawing speed is 2-8 mm/min in the directional solidification process.
3. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 2, wherein: in the step (1), the wax mold comprises a crystallization section, a transition section, a casting, a pouring channel, a pouring system and a pouring cup, and can be designed according to the specific size and the overall dimension of the casting.
4. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 2, wherein: in the step (2), the seed cutting requirements are as follows: two 10mm side lengths of the seed crystal are respectively oriented along [010] and [100], and a 30mm side length is oriented along [001 ].
5. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 2, wherein: in the step (3), the process of making the shell on the wax pattern comprises the following steps: coating 1-2 layers of surface layer slurry on a wax pattern, controlling the viscosity to be 35-40s, and sanding to obtain EC95 sand; then coating and hanging 3-6 layers of reinforcing layer slurry, controlling the viscosity to be 12-18s, and sanding to obtain EC95 sand; and finally, coating a layer of reinforcing layer slurry, controlling the viscosity to be 12-18s, and not sanding.
6. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 2, wherein: in the step (3), when the prepared shell is dewaxed by a high-pressure dewaxing kettle, the pressure is controlled to be 0.6-0.7 MPa, the temperature is 165-170 ℃, and the dewaxing time is 15-20 minutes.
7. The method for improving the performance stability of the thin-wall single crystal superalloy casting according to claim 2, wherein: in the step (3), the roasting process of the shell is as follows: the shell is flatly placed on a bottom plate of an electric furnace, the roasting temperature is 900 +/-20 ℃, the time is more than or equal to 2 hours, the shell is allowed to enter the furnace at the temperature lower than 500 ℃, and the temperature is allowed to be reduced by opening a furnace door after the heat preservation time.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255336A (en) * | 2022-08-30 | 2022-11-01 | 北京航空航天大学 | Composite component single crystal thin-wall component and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255336A (en) * | 2022-08-30 | 2022-11-01 | 北京航空航天大学 | Composite component single crystal thin-wall component and preparation method thereof |
| CN115255336B (en) * | 2022-08-30 | 2024-03-26 | 北京航空航天大学 | Composite component monocrystalline thin-wall component and preparation method thereof |
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