CN112490234A - Intelligent power module and manufacturing method thereof - Google Patents
Intelligent power module and manufacturing method thereof Download PDFInfo
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- CN112490234A CN112490234A CN202011463734.5A CN202011463734A CN112490234A CN 112490234 A CN112490234 A CN 112490234A CN 202011463734 A CN202011463734 A CN 202011463734A CN 112490234 A CN112490234 A CN 112490234A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
Abstract
The invention relates to an intelligent power module and a manufacturing method thereof.A first radiator substrate and a second radiator substrate of an upper layer and a lower layer form an installation space between the two radiator substrates, the installation space for installing electronic elements is arranged in the installation space, so that the electronic elements are also arranged in the installation space, the first radiator substrate and the second radiator substrate are connected through a bendable film circuit layer, thereby the IPM module forms an upper lamination structure and a lower lamination structure, the electronic elements can be arranged on the upper layer and the lower layer, the circuit distribution density of the IPM module is effectively improved, the surface area of the IPM module is effectively reduced, the miniaturization of the IPM module can be effectively realized, and the cost is reduced. Because the first radiator substrate and the second radiator substrate adopt a radiator and substrate integrated structure, the structure is different from a substrate and radiator separated structure in the prior art, so that the step of installing the substrate and the radiator can be omitted, and the production efficiency of the IPM module is improved.
Description
Technical Field
The invention relates to an intelligent power module and a manufacturing method of the intelligent power module, and belongs to the technical field of power semiconductor devices.
Background
In an Intelligent Power Module (IPM), an IC drive control circuit, a switching tube sampling amplification circuit, a PFC current protection circuit and the like, and an inverter circuit consisting of a low-voltage control circuit and a high-voltage Power device is arranged on the same plate, the high-voltage Power device is easy to generate interference by multiple low-voltage control circuits in the working process, and meanwhile, the existing IPM Intelligent Power Module only integrates a single IPM Module, and the integration of multiple IPM Intelligent Power modules is not realized, so that higher requirements are provided for the high integration and high heat dissipation technology of the IPM Intelligent Power Module in the face of market miniaturization and low cost competition.
Disclosure of Invention
The technical problem to be solved by the invention is to solve the problems that a high-voltage power device inside the IPM module is easy to interfere with a low-voltage control circuit in the working process of the conventional IPM module, and the module inside the IPM module only comprises one module circuit, so that the cost is higher.
Specifically, the invention discloses an intelligent power module, comprising
The first radiator substrate and the second radiator substrate are arranged in an up-down opposite mode, the first radiator substrate comprises a first radiating part arranged on the outer side, a first mounting surface used for mounting a power device is formed on the bottom surface of the first radiating part, the second radiator substrate comprises a second radiating part arranged on the outer side, and a second mounting surface used for mounting the power device is formed on the bottom surface of the second radiating part;
a plurality of electronic components including power devices, the electronic components being mounted on the first mounting surface and the second mounting surface;
the bendable thin film circuit layer is arranged at one end of the first substrate and the second substrate on the same side so as to be electrically connected with the first substrate and the second substrate;
the pins are arranged and electrically connected to the other ends of the first substrate and the second substrate on the same side;
and the packaging body at least wraps and fills the space between the first mounting surface and the second mounting surface, and the pins are exposed out of the packaging body.
Optionally, the first substrate includes a first heat sink portion, a first insulating layer, and a first circuit layer connected in sequence, wherein a surface of the first circuit layer forms a first mounting surface, the second substrate includes a second heat sink portion, a second insulating layer, and a second circuit layer connected in sequence, and the second mounting surface is disposed on the circuit layer, wherein a surface of the second circuit layer forms a second mounting surface.
Alternatively, the circuit layer is formed by etching from a copper foil on the insulating layer; or the conductive medium is formed by printing a paste-shaped conductive medium on the insulating layer, wherein the conductive medium is one of graphene, tin paste or silver colloid.
Optionally, the film circuit layer comprises an insulating film layer on the surface and a conductive medium layer positioned in the middle of the insulating film layer, and the film circuit layer is manufactured based on a flexible copper clad laminate process or a wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
Optionally, the other end of the first heat dissipation part opposite to the pins is provided with a first extension part connected with the first mounting surface, the other end of the second heat dissipation part opposite to the pins is provided with a second extension part connected with the second mounting surface, the first extension part and the second extension part are respectively provided with a first groove and a second groove in an opposite manner, and the first groove and the second groove form an accommodating space for accommodating the thin film circuit layer.
Optionally, the bottom surface of the first extension portion and the bottom surface of the second extension portion abut against each other; the first heat dissipation part protrudes towards the inner side to form a first protruding part, the first mounting surface is arranged on the surface of the first protruding part, the second heat dissipation part protrudes towards the inner side to form a second protruding part, and the second mounting surface is arranged on the surface of the second protruding part.
Optionally, the package body extends toward both ends of the first substrate and the second substrate to seal the accommodating space and the bent portions of the sealing pins, respectively.
Optionally, the first and second mounting surfaces are 0.1-0.5mm higher than the first and second groove bottom surfaces, respectively.
Optionally, the IPM module further includes a plurality of jumpers electrically connecting the plurality of electronic components; and/or a plurality of jumpers electrically connect the electronic element with the first mounting surface; and/or a plurality of jumpers electrically connect the electronic component with the second mounting surface.
The invention also provides a manufacturing method of the intelligent power module, which is characterized by comprising the following steps:
arranging a first radiator substrate, a second radiator substrate and a thin film circuit layer in a carrier;
arranging pins and a plurality of electronic components including power devices on the first mounting surface and the second mounting surface;
respectively electrically connecting jumper wires with the first mounting surface, the thin film circuit layer, the second mounting surface and the thin film circuit layer to form a first semi-finished product;
bending the film circuit layer of the first semi-finished product in a pair manner to form a second semi-finished product, enabling the first mounting surface and the second mounting surface to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
and encapsulating the packaging mold to form a packaging body, wherein a second semi-finished product containing the packaging body forms a third semi-finished product, the packaging body is positioned between the first mounting surface and the second mounting surface, and the packaging body extends outwards at two sides of the first mounting surface and the second mounting surface to respectively seal the mounting space and the bending parts of the sealing pins.
The intelligent power module comprises a first radiator substrate and a second radiator substrate which are arranged at an upper layer and a lower layer, wherein an installation space is formed between the first radiator substrate and the second radiator substrate, a first installation surface and a second installation surface for installing electronic elements are arranged in the installation space, so that the electronic elements arranged on the two installation surfaces are also arranged in the installation space, the first radiator substrate and the second radiator substrate are connected through a bendable thin film circuit layer, the IPM module forms an upper laminated structure and a lower laminated structure, the electronic elements can be installed on the upper layer and the lower layer, the circuit distribution density of the IPM module is effectively improved, the surface area size of the IPM module is effectively reduced, the miniaturization of the IPM module can be effectively realized, and the cost is reduced. Because the first radiator substrate and the second radiator substrate adopt a radiator and substrate integrated structure, the structure is different from a substrate and radiator separated structure in the prior art, so that the step of installing the substrate and the radiator can be omitted, and the production efficiency of the IPM module is improved. And because the upper layer and the lower layer of the structure mode can enable the circuit of the high-voltage power device and the low-voltage control circuit to be respectively arranged at the two layers, the electrical distance between the high-voltage power device and the low-voltage control circuit is realized, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and the reliability of the IPM module are improved.
Drawings
FIG. 1 is a simplified diagram of a semi-finished IPM module in accordance with an embodiment of the present invention;
FIG. 2 is a cross-sectional view of an IPM module in accordance with an embodiment of the invention;
FIG. 3 is a flowchart illustrating a method for fabricating an IPM module according to an embodiment of the invention.
Reference numerals:
the IPM module 100, the first heat sink substrate 10, the first mounting surface 11, the first heat sink portion 12, the first protrusion 12A, the first heat sink fins 12B, the first extension 13, the first groove 13A, the second heat sink substrate 20, the second mounting surface 21, the second heat sink portion 22, the second protrusion 22A, the second heat sink fins 22B, the second extension 23, the second groove 23A, the package 30, the electronic component 50, the jumper wire 60, the pin 70, the bent portion 71, and the thin film circuit layer 80.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The present invention provides an intelligent power module, i.e., IPM module 100. As shown in fig. 1 to 2, the IPM module 100 of the embodiment of the present invention includes a first heat sink substrate 10 and a second heat sink substrate 20 disposed opposite to each other in an up-down direction, a plurality of electronic components 50 including power devices, a bendable thin film circuit layer 80, a plurality of pins 70, and a package 30. The first heat sink substrate 10 comprises a first heat sink part 12 arranged on the outer side, a first mounting surface 11 used for mounting a power device is formed on the bottom surface of the first heat sink part 12, the second heat sink substrate 20 comprises a second heat sink part 22 arranged on the outer side, and a second mounting surface 21 used for mounting the power device is formed on the bottom surface of the second heat sink part 22, the first heat sink substrate 10 and the second heat sink substrate 20 are different from a substrate structure in the prior art, the mounting surfaces are integrally formed through a heat sink, and the scheme that the substrate and the heat sink are separated in the prior art is not adopted, so that the manufacturing process can be effectively saved, and the manufacturing efficiency of the IPM module 100 is improved.
The thin film circuit layer 80 is disposed at one end of the first heat sink substrate 10 and the second heat sink substrate 20 on the same side to electrically connect the first heat sink substrate 10 and the second heat sink substrate 20; a plurality of pins 70 are provided and electrically connected to the other ends of the first heat sink substrate 10 and the second heat sink substrate 20 on the same side; the package body 30 is at least wrapped and filled in the space between the first mounting surface 11 and the second mounting surface 21, and the pins 70 are exposed from the package body 30.
Unlike the conventional arrangement mode in which the IPM module 100 has one substrate, the IPM module 100 of the embodiment of the present invention includes the first heat sink substrate 10 and the second heat sink substrate 20 having two upper and lower layers, an installation space is formed between the first heat sink substrate 10 and the second heat sink substrate 20, the first installation surface 11 and the second installation surface 21 for installing the electronic component 50 are disposed in the installation space, so that the electronic component 50 installed on the two installation surfaces is also installed in the installation space, the first heat sink substrate 10 and the second heat sink substrate 20 are connected by the flexible thin film circuit layer 80, so that the IPM module 100 forms a top-bottom laminated structure, and the electronic component 50 can be installed on both the upper and lower layers, thereby effectively increasing the circuit distribution density of the IPM module 100, effectively reducing the surface area size of the IPM module 100, and effectively realizing the miniaturization of the IPM module 100, thereby reducing the cost. Since the first heat sink substrate 10 and the second heat sink substrate 20 adopt a structure in which the heat sink and the substrate are integrated, which is different from a structure in which the substrate and the heat sink are separated in the prior art, a step of mounting the substrate and the heat sink can be omitted, thereby improving the production efficiency of the IPM module. And because the upper and lower two-layer structural mode can make the circuit of high-voltage power device and low-voltage control circuit set up in two-layer respectively to this realizes the electric distance of the two, reduces the interference of high-voltage power device to low-voltage control circuit, thereby has improved the job stabilization nature and the reliability of IPM module 100.
In some embodiments of the present invention, as shown in fig. 1 and 2, the first heat sink substrate 10 includes a first heat sink portion 12, a first insulating layer (not shown in the figure), and a first circuit layer (not shown in the figure) connected in this order, wherein a surface of the first circuit layer forms the first mounting surface 11, the first heat sink substrate 10 includes a second heat sink portion 22, a second insulating layer (not shown in the figure), and a second circuit layer (not shown in the figure) connected in this order, and the second mounting surface 21 is disposed on the circuit layer, wherein a surface of the second circuit layer forms the second mounting surface 21. Because the substrate radiator adopts a structural mode of integrating the radiator and the substrate, a metal radiating layer of the substrate in the prior art can be omitted, the metal radiating layer and the radiating part are integrated, wherein the first radiating part 12 and the second radiating part 22 can be made of metal materials with good heat conductivity, such as aluminum and copper, such as aluminum made of materials of 1100, 5052 and the like, and mainly realize heat conduction and radiating functions. An insulating layer is connected to the surfaces of the first heat sink member 12 and the second heat sink member 22, and has a relatively thin thickness, typically 50um to 150um, and typically 110 um. The circuit layer is made of metal such as copper and is insulated from the metal heat dissipation layer, the circuit layer comprises circuit lines made of etched copper foil, and the thickness of the circuit layer is relatively thin, such as about 70 um; or the circuit layer is formed by printing paste-shaped conductive media, and the conductive media can be graphene, tin paste, silver paste and other conductive materials. Mounting sites for electronic components are provided on the circuit layer to mount the electronic components 50 and the leads 70. The package body 30 is mainly formed of an injection molding material, which may be a resin.
In a next embodiment of the present invention, the thin film circuit layer 80 is manufactured based on a flexible copper clad laminate process or a flex cable process. Referring to fig. 1 and 2, the thin film circuit layer 80 electrically connects the circuit layers of the first heat sink substrate 10 and the second heat sink substrate 20, and is a flexible soft structure, such as a flexible flat cable for connecting circuit boards of a mobile phone display screen. The film circuit layer 80 is configured to be a flexible soft structure, so that the first heat sink substrate 10 and the second heat sink substrate 20 are stacked up and down and then electrically connected at a short distance at one side of the two through the film circuit layer 80.
Further, the thin film circuit layer 80 specifically includes an insulating thin film layer (not shown) located on the surface and a conductive medium layer (not shown) located in the insulating thin film layer. And the conductive medium layer may be integrally formed with the insulating layers of the first and second heat sink substrates 10 and 20, thereby facilitating the production. When the first heat sink substrate 10, the second heat sink substrate 20 and the thin film circuit layer 80 are manufactured, as shown in fig. 1, the insulating layers of the first heat sink substrate 10 and the second heat sink substrate 20 and the insulating thin film layer of the thin film circuit layer 80 can be manufactured at the same time, and a conductive medium is simultaneously formed on the insulating layers or the non-metal heat dissipation layers and the insulating thin film layers of the first heat sink substrate 10 and the second heat sink substrate 20 by printing and other processes, so that the conductive medium layers of the circuit layers of the first heat sink substrate 10 and the second heat sink substrate 20 and the thin film circuit layer 80 are formed at the same time and are integrally connected, thereby facilitating the manufacturing and prompting the manufacturing efficiency of the whole semi-finished product.
The thin film wiring layer 80 is mounted on one side of the two heat sink substrates, which effectively reduces the mounting space occupied by the first and second heat sink substrates 10 and 20 and the semi-finished product formed by the thin film wiring layer 80.
Further, in a lower embodiment of the present invention, a plurality of jumpers 60 are further disposed on the circuit layer to electrically connect the plurality of electronic components 50, and/or a plurality of jumpers 60 electrically connect the electronic components 50 with the first mounting surface 11, and/or a plurality of jumpers 60 electrically connect the electronic components 50 with the second mounting surface 21. The jumper wire 60 is made of metal material, such as aluminum, copper, gold, silver and other materials with good welding and conductive performance, and the connection of the jumper wire 60 can be realized through keys and binding wires.
Specifically, the jumper wires 60 may connect the electronic component 50 and the electronic component 50 on one heat sink substrate, may connect the electronic component 50 and the circuit layer, and may also serve as a jumper wire to connect the circuit layer; the jumper wires 60 may also connect the electronic element 50 and the electronic element 50 on the thin film circuit layer 80, connect the electronic element 50 to a conductive medium layer, or be used as a jumper wire to connect the conductive medium layer; these jumpers 60 may also connect the heat sink substrate with the thin-film wiring layer 80, such as connecting the electronic components 50 on the heat sink substrate with the conductive medium layer on the thin-film wiring layer 80, connecting the circuit layer on the heat sink substrate with the electronic components 50 on the thin-film wiring layer 80, or connecting the circuit layer on the heat sink substrate with the conductive medium layer on the thin-film wiring layer 80.
In some embodiments of the invention, as shown in fig. 1 and 2, the other end of the first heat sink part 12 opposite to the pins 70 is provided with a first extension part 13 connected to the first mounting surface 11, the other end of the second heat sink part 22 opposite to the pins 70 is provided with a second extension part 23 connected to the second mounting surface 21, the first extension part 13 and the second extension part 23 are respectively provided with a first groove 13A and a second groove 23A opposite to each other, and the first groove 13A and the second groove 23A form a receiving space for receiving the film circuit layer 80. As shown in fig. 2, the first extension portion 13 and the second extension portion 23 are respectively disposed on the other side of the first heat sink portion 12 and the second heat sink portion 22 on the side of the mounting pin 70, i.e., the right side in fig. 2, and are respectively notched toward the inner side to form a first groove 13A and a second groove 23A, the shapes and sizes of the first groove 13A and the second groove 23A are preferably the same as those in fig. 2, so that a receiving space is formed after the two portions are oppositely disposed to receive the bent thin film circuit layer 80, and the first extension portion 13 and the second extension portion 23 further increase the heat dissipation areas of the first heat sink portion 12 and the second heat sink portion 22, thereby improving the heat dissipation efficiency of the heat dissipation device on heat generation.
Further, as shown in fig. 1 and 2, the bottom surface of the first extending portion 13 and the bottom surface of the second extending portion 23 abut against each other, so that the first extending portion 13 and the second extending portion 23 are in contact with each other and arranged side by side up and down on the basis of consistent shape and size, and the first groove 13A and the second groove 23A are spliced with each other to form a containing space with one closed surface. Further, the package body 30 extends toward both ends of the first and second substrates to seal the accommodation space and the bent portions 71 of the sealing pins 70, respectively. The accommodating space is used for accommodating the film circuit layer 80 better, and also enabling the packaging body 30 to form an extending installation part matched with the accommodating space when the film circuit layer 80 is sealed after extending towards the accommodating space, so that the first heat dissipation part 12 and the second heat dissipation part 22 are more reliably fixedly combined with the packaging body 30.
In some embodiments of the present invention, as shown in fig. 1 and 2, the first heat sink member 12 protrudes toward the inside to form a first protrusion 12A, the first mounting surface 11 is provided on a surface of the first protrusion 12A, the second heat sink member 22 protrudes toward the inside to form a second protrusion 22A, and the second mounting surface 21 is provided on a surface of the second protrusion 22A. Wherein one side surfaces of the first projection 12A and the second projection 22A constitute side walls of the first groove 13A and the second groove 23A, respectively, so that the first mounting surface 11 and the second mounting surface 21 are higher than the bottom surface of the first groove 13A and the bottom surface of the second groove 23A, respectively, preferably by 0.1 to 0.5mm, such as 0.2 mm. Thus, the package 30 is shaped to form corresponding grooves in the mounting space between the first heat sink substrate 10 and the second heat sink substrate 20, and the two ends of the package extend, and the upper and lower grooves of the package 30 are respectively and correspondingly matched with the first protrusion 12A and the second protrusion 22A, thereby facilitating the connection between the package 30 and the first heat sink substrate 10 and the second heat sink to be more reliable.
In a lower embodiment of the present invention, the first heat sink member 12 and the second heat sink member 22 are sheet-shaped, and the outer surfaces thereof are provided with first heat fins 12B and second heat fins, respectively. As shown in fig. 2, the heat dissipation capability of the first heat sink 12 and the second heat sink 22 can be effectively improved by disposing a plurality of heat dissipation fins 22B distributed in parallel on the outer surface, and heat can be quickly absorbed by disposing the sheet-shaped heat dissipation fins and discharged through the air slots in the middle.
The present invention further provides a manufacturing method of the IPM module 100 according to the above embodiment, as shown in fig. 3, the manufacturing method includes the following steps:
step S100, arranging a first radiator substrate, a second radiator substrate and a thin film circuit layer in a carrier;
step S200, arranging pins and a plurality of electronic components including power devices on a first mounting surface and a second mounting surface;
step S300, respectively electrically connecting jumper wires with the first mounting surface, the thin film circuit layer, the second mounting surface and the thin film circuit layer to form a first semi-finished product;
s400, oppositely bending the film circuit layer of the first semi-finished product to form a second semi-finished product, enabling the first mounting surface and the second mounting surface to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
step S500, glue is poured into the packaging mold to form a packaging body, a second semi-finished product containing the packaging body forms a third semi-finished product, the packaging body is located between the first mounting surface and the second mounting surface, and the packaging body extends outwards on two sides of the first mounting surface and the second mounting surface to seal the mounting space and seal the bending portions of the pins respectively.
In step S100, as shown in fig. 1, the first heat sink substrate 10, the second heat sink substrate 20 and the thin film circuit layer 80 may be placed in a special carrier (not shown), wherein the carrier may be made of a material with a high temperature resistance of 200 ℃ or higher, such as aluminum, synthetic stone, ceramic, PPS, etc.
It should be noted that, in step S100, before the substrate and the thin film circuit layer 80 are placed in the carrier, a plurality of processes for forming the first heat sink substrate 10 and the second heat sink substrate 20 may be further included. If a metal radiator made of a Chinese character 'lu' material is manufactured firstly, and a plane with a proper size is formed on one surface of the metal radiator according to the design size of the circuit layout, for example, a routing processing mode is adopted, a routing knife uses high-speed steel as the material, a motor uses the rotating speed of 5000 r/min, and the routing knife and the plane of the aluminum material form a right-angle lower knife; the circuit layer comprises a circuit line and a bonding pad arranged close to the side edge of the metal heat dissipation layer, or is formed by printing a paste-shaped conductive medium. Wherein the surface of the circuit layer of the first heat sink substrate 10 and the surface of the circuit layer of the second heat sink substrate 20 form the first mounting surface 11 and the second mounting surface 21, respectively.
When the first heat sink substrate 10 and the second heat sink substrate 20 are formed, the thin film circuit layer 80 may be formed at the same time, specifically, an insulating thin film layer may be formed first, and then a conductive medium layer is printed on the insulating thin film layer based on a printing process, it should be noted that the circuit layers of the first heat sink substrate 10 and the second heat sink substrate 20 may also be formed by printing the conductive medium layer by a printing process, and the circuit layers of the first heat sink substrate 10 and the second heat sink substrate 20 and the conductive medium layer may be integrally printed at the same time, thereby saving the process. Of course, the circuit layer and the conductive dielectric layer may be formed separately.
In step S200, the electronic component 50 and the pin 70 of the power device are mounted on the circuit layer by solder paste soldering or silver paste dispensing process, the electronic component 50 is mounted on the mounting position of the circuit layer by an automatic die bonder, and then the electronic component 50 and the pin 70 are soldered on the mounting position by a reflow oven.
In step S300, the jumper wire 60 may electrically connect the first circuit layer of the first heat sink substrate 10 with the thin film wire layer 80 by a wire binding device, and the second circuit layer of the second heat sink substrate 20 with the thin film wire layer 80 by the jumper wire 60, thereby achieving that the thin film wire layer 80 electrically connects the first heat sink substrate 10 and the second heat sink substrate 20. Finally forming a first semi-finished product.
In step S400, as shown in fig. 2, the film circuit layer 80 of the first semi-finished product is bent, such that the first heat sink substrate 10 and the second heat sink substrate 20 are stacked up and down, the first mounting surface 11 and the second mounting surface 21 are inwardly opposite, the first heat sink portion 12 and the second heat sink portion 22 are disposed on the upper and lower outer sides, the film circuit layer 80 is bent and disposed on the same side of the first heat sink substrate 10 and the second heat sink substrate 20, and the pins 70 are disposed on the other same side of the first heat sink substrate 10 and the second heat sink substrate 20, so as to form the second semi-finished product. The second semi-finished product is then placed in a packaging mold (not shown) which has a mold cavity for injection molding and packaging.
In step S500, a thermoplastic material, such as a resin, is injected into the mold cavity until the entire cavity is filled, the temperature within the cavity being typically about 180 ℃ as the resin material is injected. After cooling, the thermoplastic material forms an encapsulation layer, and the first heat sink substrate 10 and the second heat sink substrate 20 are all covered with the encapsulation layer on the side where the electronic component 50 and the pins 70 are mounted. And extend outward on both sides of the first and second mounting surfaces 11 and 21 to seal the mounting space and the bent portions of the pins, respectively. Finally forming a third semi-finished product.
Further, the third semi-finished product may be subjected to pin 70 shearing and shaping, and an electrical property test may be performed on the product through an electrical parameter testing machine, so as to complete the manufacturing process of the IPM module.
The method for manufacturing the intelligent power module of the invention comprises disposing the first heat sink substrate 10, the second heat sink substrate 20 and the thin film circuit layer 80 in a carrier, and a plurality of electronic components 50 including power devices and pins 70 are arranged on the first mounting surface 11 and the second mounting surface 21, the jumper wires 60 are then electrically connected to the first mounting face 11 and the thin-film wiring layer 80 and the second mounting face 21 and the thin-film wiring layer 80 respectively to form a first semi-finished product, and the pair of thin-film wiring layers 80 of the first semi-finished product is bent to form a second semi-finished product, so that the first mounting surface 11 and the second mounting surface 21 are opposed inward, and the second semi-finished product is arranged in a packaging mould, and the packaging mould is filled with glue to form a packaging body 30 so as to form a third semi-finished product, the package body 30 is located between the first mounting surface 11 and the second mounting surface 21, and extends outwards on two sides of the first mounting surface 11 and the second mounting surface 21 to respectively seal the mounting space and the bending parts of the pins. Therefore, the IPM module 100 forms an upper and lower laminated structure, and the electronic component 50 can be mounted on both the upper and lower layers, so that the circuit distribution density of the module is effectively improved, the surface area of the IPM module 100 is effectively reduced, the IPM module 100 can be effectively miniaturized, and the cost is reduced. Since the first heat sink substrate 10 and the second heat sink substrate 20 adopt a structure in which the heat sink and the substrate are integrated, which is different from a structure in which the substrate and the heat sink are separated in the prior art, a step of mounting the substrate and the heat sink can be omitted, thereby improving the production efficiency of the IPM module. And because the upper and lower two-layer structural mode can make the circuit of high-voltage power device and low-voltage control circuit set up in two-layer respectively to this realizes the electric distance of the two, reduces the interference of high-voltage power device to low-voltage control circuit, thereby has improved the job stabilization nature and the reliability of IPM module 100.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A smart power module, comprising:
the heat sink comprises a first heat sink substrate and a second heat sink substrate which are arranged oppositely from top to bottom, wherein the first heat sink substrate comprises a first heat sink part arranged on the outer side, a first mounting surface used for mounting a power device is formed on the bottom surface of the first heat sink part, the second heat sink substrate comprises a second heat sink part arranged on the outer side, and a second mounting surface used for mounting the power device is formed on the bottom surface of the second heat sink part;
a plurality of electronic components including power devices, the electronic components being mounted on the first mounting surface and the second mounting surface;
the bendable thin film circuit layer is arranged at one end of the first substrate and the second substrate on the same side so as to be electrically connected with the first substrate and the second substrate;
the pins are arranged and electrically connected to the other ends of the first substrate and the second substrate on the same side;
and the packaging body at least wraps and fills the space between the first mounting surface and the second mounting surface, and the pins are exposed from the packaging body.
2. The smart power module of claim 1, wherein the first substrate comprises a first heat sink portion, a first insulating layer, and a first circuit layer connected in sequence, wherein a surface of the first circuit layer forms the first mounting surface, the second substrate comprises a second heat sink portion, a second insulating layer, and a second circuit layer connected in sequence, and a second mounting surface is disposed on the circuit layer, wherein a surface of the second circuit layer forms the second mounting surface.
3. The smart power module of claim 2 or 3, wherein the circuit layer is formed by etching from a copper foil on the insulating layer; or the conductive medium is formed by printing a paste-shaped conductive medium on the insulating layer, wherein the conductive medium is one of graphene, tin paste or silver colloid.
4. The intelligent power module according to claim 1, wherein the thin film circuit layer comprises an insulating thin film layer on the surface and a conductive medium layer positioned in the middle of the insulating thin film layer, and the thin film circuit layer is manufactured based on the flexible copper clad laminate process or a wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
5. The smart power module according to claim 1, wherein the first heat sink member is provided with a first extension portion connected to the first mounting surface at an end opposite to the pin, the second heat sink member is provided with a second extension portion connected to the second mounting surface at an end opposite to the pin, the first extension portion and the second extension portion are respectively provided with a first groove and a second groove opposite to each other, and the first groove and the second groove form a receiving space for receiving the thin film circuit layer.
6. The smart power module of claim 5, wherein a bottom surface of the first extension portion and a bottom surface of the second extension portion abut each other; the first heat dissipation part protrudes inward to form a first protruding part, the first mounting surface is arranged on the surface of the first protruding part, the second heat dissipation part protrudes inward to form a second protruding part, and the second mounting surface is arranged on the surface of the second protruding part.
7. The smart power module of claim 5, wherein the package body extends toward both ends of the first and second substrates to seal the receiving space and to seal the bent portions of the leads, respectively.
8. The smart power module of claim 6, wherein the first and second mounting faces are 0.1-0.5mm above the first and second recess floor faces, respectively.
9. The smart power module of claim 1 further comprising a plurality of jumpers electrically connecting the plurality of electronic components; and/or the plurality of jumper wires electrically connect the electronic element with the first mounting surface; and/or the plurality of jumper wires electrically connect the electronic element with the second mounting surface.
10. A method of manufacturing a smart power module according to any one of claims 1 to 9, characterized in that the method of manufacturing comprises the steps of:
arranging a first radiator substrate, a second radiator substrate and a thin film circuit layer in a carrier;
arranging pins and a plurality of electronic components including power devices on the first mounting surface and the second mounting surface;
respectively electrically connecting jumper wires with the first mounting surface, the thin film circuit layer, the second mounting surface and the thin film circuit layer to form a first semi-finished product;
bending the film circuit layer of the first semi-finished product in a pair manner to form a second semi-finished product, enabling the first mounting surface and the second mounting surface to be opposite inwards, and arranging the second semi-finished product in a packaging mold;
and glue is poured into the packaging mold to form a packaging body, a second semi-finished product containing the packaging body forms a third semi-finished product, the packaging body is located between the first mounting surface and the second mounting surface, and the packaging body extends outwards at two sides of the first mounting surface and the second mounting surface to respectively seal the mounting space and the bending parts of the pins.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011463734.5A CN112490234A (en) | 2020-12-11 | 2020-12-11 | Intelligent power module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011463734.5A CN112490234A (en) | 2020-12-11 | 2020-12-11 | Intelligent power module and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544202A (en) * | 2023-07-06 | 2023-08-04 | 广东汇芯半导体有限公司 | High-integration superconductive heat semiconductor circuit module and manufacturing method |
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2020
- 2020-12-11 CN CN202011463734.5A patent/CN112490234A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544202A (en) * | 2023-07-06 | 2023-08-04 | 广东汇芯半导体有限公司 | High-integration superconductive heat semiconductor circuit module and manufacturing method |
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