CN112490232A - Intelligent power module and manufacturing method thereof - Google Patents

Intelligent power module and manufacturing method thereof Download PDF

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Publication number
CN112490232A
CN112490232A CN202011463548.1A CN202011463548A CN112490232A CN 112490232 A CN112490232 A CN 112490232A CN 202011463548 A CN202011463548 A CN 202011463548A CN 112490232 A CN112490232 A CN 112490232A
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mounting surface
substrate
semi
heat dissipation
finished product
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CN202011463548.1A
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谢荣才
左安超
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Guangdong Huizhi Precision Instrument Co ltd
Guangdong Huizhi Precision Manufacturing Co ltd
Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huizhi Precision Instrument Co ltd
Guangdong Huizhi Precision Manufacturing Co ltd
Guangdong Huixin Semiconductor Co Ltd
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Priority to CN202011463548.1A priority Critical patent/CN112490232A/en
Publication of CN112490232A publication Critical patent/CN112490232A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

The invention relates to an intelligent power module and a manufacturing method thereof, comprising a first substrate, a second substrate and a third substrate which are at least three layers up and down, wherein an installation space is formed between the first substrate and the third substrate, so that electronic elements arranged on the three installation surfaces are also installed in the installation space, radiators are installed on the upper outer side surface and the lower outer side surface of the first substrate and the third substrate, and the three substrates are connected through a bendable film circuit layer, so that the IPM module forms a plurality of layers which are stacked up and down and all install the electronic elements, thereby effectively improving the circuit distribution density of the module, effectively realizing the miniaturization of the IPM module and reducing the cost. And because of the structural mode of at least three layers up and down, the circuit of the high-voltage power device with large heat productivity and the low-voltage control circuit with small heat productivity can be completely isolated, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and reliability of the IPM module are improved.

Description

Intelligent power module and manufacturing method thereof
Technical Field
The invention relates to an intelligent power module and a manufacturing method of the intelligent power module, and belongs to the technical field of power semiconductor devices.
Background
In an Intelligent Power Module (IPM), an IC drive control circuit, a switching tube sampling amplification circuit, a PFC current protection circuit and the like, and an inverter circuit consisting of a low-voltage control circuit and a high-voltage Power device is arranged on the same plate, the high-voltage Power device is easy to generate interference by multiple low-voltage control circuits in the working process, and meanwhile, the existing IPM Intelligent Power Module only integrates a single IPM Module, and the integration of multiple IPM Intelligent Power modules is not realized, so that higher requirements are provided for the high integration and high heat dissipation technology of the IPM Intelligent Power Module in the face of market miniaturization and low cost competition.
Disclosure of Invention
The technical problem to be solved by the invention is to solve the problems that a high-voltage power device inside the IPM module is easy to interfere with a low-voltage control circuit in the working process of the conventional IPM module, and the module inside the IPM module only comprises one module circuit, so that the cost is higher.
Specifically, the present invention discloses an intelligent power module, comprising:
the first substrate comprises a first mounting surface and a first heat dissipation surface for heat dissipation, the third substrate comprises a third mounting surface and a third heat dissipation surface for heat dissipation, the first mounting surface and the second mounting surface are arranged in a downward facing manner, the first heat dissipation surface and the third heat dissipation surface are arranged in an outward facing manner, and at least one surface of the second substrate is provided with a second mounting surface;
a plurality of electronic components mounted on the first mounting surface, the second mounting surface, and the third mounting surface, wherein the electronic components mounted on the first mounting surface and the third mounting surface generate heat more than the electronic components mounted on the second mounting surface;
the flexible at least two thin film circuit layers are used for electrically connecting the first substrate with the second substrate and electrically connecting the second substrate with the third substrate;
the pins are arranged and electrically connected to one ends of the first substrate and the third substrate;
the packaging body at least wraps and fills a space between the first mounting surface and the third mounting surface, and the pins are exposed out of the packaging body;
and the radiator is arranged on the first radiating surface and the third radiating surface.
Optionally, the second substrate is a glass fiber board or a flexible copper clad laminate with a circuit layer arranged on both sides.
Optionally, the circuit provided in the circuit layer of the second substrate is a low-voltage control circuit to control the operation of the circuits including the power devices on the first substrate and the third substrate.
Optionally, the electronic components mounted on the first mounting surface and the third mounting surface comprise power devices.
Optionally, the first substrate, the second substrate, and the third substrate include a metal heat dissipation layer, an insulating layer, and a circuit layer, which are sequentially connected, wherein the first mounting surface and the third mounting surface are disposed on the circuit layer, and the first heat dissipation surface and the third heat dissipation surface are disposed on the metal heat dissipation layer.
Optionally, the first substrate, the second substrate and the third substrate include a non-metal heat dissipation layer and a circuit layer which are sequentially connected, wherein the first mounting surface and the third mounting surface are disposed on the circuit layer, and the first heat dissipation surface and the third heat dissipation surface are disposed on the non-metal heat dissipation layer.
Optionally, the film circuit layer comprises an insulating film layer on the surface and a conductive medium layer positioned in the middle of the insulating film layer, and the film circuit layer is manufactured based on a flexible copper clad laminate process or a wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
The invention also provides a manufacturing method of the intelligent power module, which is characterized by comprising the following steps:
horizontally placing the first substrate, the second substrate, the thin film circuit layer and the third substrate in a carrier;
arranging pins and a plurality of electronic elements containing power devices on the first mounting surface and the third mounting surface, and arranging a plurality of electronic elements not containing power devices on the second mounting surface to form a first semi-finished product;
respectively and electrically connecting the thin film circuit layer with the first mounting surface, the second mounting surface and the third mounting surface through jumpers to form a second semi-finished product;
bending the thin film circuit layer of the third semi-finished product to enable the first substrate, the second substrate and the third substrate to be sequentially overlapped up and down to form a fourth semi-finished product, wherein the first mounting surface and the second mounting surface are inwards opposite to the third substrate, and the fourth semi-finished product is arranged in a packaging mold;
pouring glue into the packaging mold to form a packaging body, wherein a fourth semi-finished product containing the packaging body forms a fifth semi-finished product, the packaging body is positioned between the first mounting surface and the second mounting surface, and the first heat dissipation surface and the second heat dissipation surface are exposed outwards;
and respectively installing the radiators on the first radiating surface and the third radiating surface of the fifth semi-finished product.
Optionally, the step of forming the first semi-finished product comprises:
arranging pins and a plurality of electronic elements containing power devices on the upward mounting surface in the first mounting surface and the third mounting surface, and arranging a plurality of electronic elements not containing power devices on the upward mounting surface in the second mounting surface to form a middle first semi-finished product;
and turning the middle first semi-finished product integrally to enable the mounting surface which is not provided with the electronic element to be arranged upwards in the first mounting surface, the second mounting surface and the third mounting surface, arranging a plurality of electronic elements containing power devices on the mounting surface of the upwards first mounting surface and the upwards second mounting surface, and arranging a plurality of electronic elements not containing power devices on the mounting surface of the upwards third mounting surface to form the first semi-finished product.
Optionally, the step of forming the second semi-finished product comprises:
respectively and electrically connecting the thin film circuit layer with an upward mounting surface in the first mounting surface, the second mounting surface and the third mounting surface through jumper wires to form a middle second semi-finished product;
and turning the middle second semi-finished product to enable the back surface to be upward, and electrically connecting the thin film circuit layer with the upward mounting surface of the turned first mounting surface, the turned second mounting surface and the turned third mounting surface through jumpers to form a second semi-finished product.
The intelligent power module comprises a first substrate, a second substrate and a third substrate which are arranged at least three layers up and down, wherein an installation space is formed between the first substrate and the third substrate, a first installation surface, a second installation surface and a third installation surface for installing electronic elements are arranged in the installation space, so that the electronic elements arranged on the three installation surfaces are also arranged in the installation space, a radiator is arranged on the upper outer side surface and the lower outer side surface of the first substrate and the third substrate, namely a first radiating surface and a third radiating surface, the first substrate, the second substrate and the third substrate are connected through a bendable film circuit layer, so that the IPM module forms a plurality of layers which are laminated up and down, and the electronic elements are arranged on at least three layers, thereby effectively improving the circuit distribution density of the module, effectively reducing the surface area size of the IPM module, and effectively realizing the miniaturization of the IPM module, thereby reducing the cost. And because the upper and lower at least three-layer structural mode can make the circuit of the high-voltage power device with large calorific value and the low-voltage control circuit with small calorific value completely separate, for example, the circuit containing the power device is arranged on the upper and lower first substrates and the third substrate, and the low-voltage control circuit with small calorific value is arranged on the middle third substrate, so as to realize the electrical distance between the two, reduce the interference of the high-voltage power device on the low-voltage control circuit, and improve the working stability and reliability of the IPM module.
Drawings
FIG. 1 is a simplified diagram of a semi-finished IPM module in accordance with an embodiment of the present invention;
FIG. 2 is a cross-sectional view of an IPM module in accordance with an embodiment of the invention;
FIG. 3 is a flowchart illustrating a method for fabricating an IPM module according to an embodiment of the invention.
Reference numerals:
the IPM module 100, the first substrate 10, the first mounting surface 11, the first heat dissipation surface 12, the second substrate 20, the second upper mounting surface 21, the second lower mounting surface 22, the package 30, the heat sink 40, the heat dissipation fins 42, the electronic component 50, the jumper 60, the pin 70, the thin film circuit layer 80, the third substrate 90, the third mounting surface 91, and the third heat dissipation surface 92.
Detailed Description
It is to be noted that the embodiments and features of the embodiments may be combined with each other without conflict in structure or function. The present invention will be described in detail below with reference to examples.
The invention provides an intelligent power module, namely an IPM module. As shown in fig. 1 to 2, the IPM module 100 of the embodiment of the present invention includes at least three substrates, i.e., a first substrate 10, a second substrate 20, a third substrate 90, a plurality of electronic components 50, a flexible thin film circuit layer 80, a plurality of leads 70, a package 30 and a heat sink 40, which are disposed opposite to each other. Wherein the first substrate 10 and the third substrate 90 are located at the upper and lower outer sides, and at least one layer of the second substrate 20 is disposed between the first substrate 10 and the third substrate 90. The first substrate 10 includes a first mounting surface 11 on which the electronic component 50 is mounted and a first heat dissipation surface 12 for dissipating heat, the second substrate 20 includes a second mounting surface on which the electronic component 50 is mounted, the third substrate 90 includes a third mounting surface 91 on which the electronic component 50 is mounted and a third heat dissipation surface 92 for dissipating heat, and the electronic component 50 mounted on the first mounting surface 11 and the third mounting surface 91 generates heat more than the electronic component 50 mounted on the second mounting surface. The package body 30 is mainly formed of an injection molding material, which may be a resin.
The thin film circuit layer 80 is used for connecting the first substrate 10 and the second substrate 20, and for connecting the second substrate 20 and the third substrate 90; the package body 30 at least wraps and fills the space between the first mounting surface 11 and the third mounting surface 91, and the pins 70 are exposed from the package body 30; the heat sink 40 is attached to the first heat radiating surface 12 and the third heat radiating surface 92.
Unlike the conventional arrangement mode in which the IPM module 100 has one substrate, the IPM module 100 of the embodiment of the present invention includes a first substrate 10, a second substrate 20, and a third substrate 90 having at least three layers, wherein a mounting space is formed between the first substrate 10 and the third substrate 90, a first mounting surface 11, a second mounting surface, and a third mounting surface 91 for mounting the electronic component 50 are disposed in the mounting space, so that the electronic component 50 mounted on the three mounting surfaces is also mounted in the mounting space, and the heat sink 40 is mounted on the upper and lower outer surfaces of the first substrate 10 and the third substrate 90, i.e., the first heat dissipation surface 12 and the third heat dissipation surface 92, and the first substrate 10, the second substrate 20, and the third substrate 90 are connected by the flexible thin film circuit layer 80, so that the IPM module 100 has a plurality of layers stacked up and down, and at least three layers mount the electronic component 50, thereby effectively increasing the circuit distribution density of the module, the surface area of IPM module 100100 is effectively reduced, so that the IPM module 100 can be effectively miniaturized, thereby reducing the cost. Moreover, due to the structural mode of at least three layers, the circuit of the high-voltage power device with large heat productivity and the low-voltage control circuit with small heat productivity can be completely isolated, for example, the circuit containing the power device is arranged on the upper and lower first substrates 10 and 90, while the low-voltage control circuit with small heat productivity is arranged on the middle third substrate 90, so that the electrical distance between the two is realized, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and reliability of the IPM module 100 are improved.
In some embodiments of the present invention, the electronic components 50 mounted on the first mounting surface 11 and the third mounting surface 91 include power devices. Since these power devices generate heat more than the electronic component 50 mounted on the second mounting surface, heat must be dissipated through the first heat dissipation surface 12 corresponding to the first mounting surface 11 and the third heat dissipation surface 92 corresponding to the third mounting surface 91, while the electronic component 50 on the second mounting surface generates heat less, and heat dissipation can be performed without separately providing a heat dissipation surface on the second substrate 20. It should be noted that power devices may be mounted on the second mounting surface, but the heat generation of these power devices is smaller than that of the power devices on the first mounting surface 11 and the third mounting surface 91, and thus, heat dissipation through a heat dissipation surface is not required.
In some embodiments of the present invention, as shown in fig. 1 and fig. 2, the second substrate 20 is a glass fiber board or a flexible copper clad board with circuit layers on both sides. Unlike the first substrate 10 and the third substrate 90, which need to mount power devices with large heat generation, the second substrate 20 does not need to be provided with a metal heat dissipation layer, and thus a plate structure with low heat dissipation efficiency, such as a glass fiber plate or a flexible copper clad plate, can be adopted. Mounting surfaces for mounting the electronic component 50 may be disposed on both sides of the second substrate 20 to form the second upper mounting surface 21 and the second lower mounting surface 22, so as to accommodate more circuits and electronic components 50, and further increase the mounting density of the electronic component 50, thereby further reducing the volume of the entire IPM module 100, for example, making the thickness thinner, so as to reduce the cost of the entire device.
In some embodiments of the present invention, as shown in fig. 1 and 2, the circuit layer of the second substrate 20 is provided with a low voltage control circuit to control the operation of the circuit including the power device on the first substrate 10 and the third substrate 90. For example, when the first substrate 10 and the third substrate 90 are provided with high-power devices such as MOS transistors loaded with high voltage, the electronic component 50 provided as a driving circuit of the power devices, or the processor and its peripheral circuits, on the second substrate 20 are further provided to output low-voltage control signals to control the operation of the power devices on the first substrate 10 and the third substrate 90. Therefore, the circuits of the high-voltage power devices of the first substrate 10 and the third substrate 90 are electrically isolated from the low-voltage control circuit of the second substrate 20, so that the transmission of interference generated by the operation of the high-voltage power devices to the low-voltage control circuit to influence the stability of the operation of the low-voltage control circuit is reduced as much as possible, and the operational reliability of the whole IPM module 100 is improved.
In some embodiments of the present invention, as shown in fig. 1 and 2, the first substrate 10, the second substrate 20, and the third substrate 90 include a metal heat dissipation layer (not shown), an insulating layer (not shown), and a circuit layer (not shown) connected in sequence, wherein the first mounting surface 11 and the third mounting surface 91 are disposed on the circuit layer, and the first heat dissipation surface 12 and the third heat dissipation surface 92 are disposed on the metal heat dissipation layer. The metal heat dissipation layer can be a rectangular plate made of metal materials with good heat conduction performance such as aluminum and copper, for example, aluminum made of materials such as 1100 and 5052, the thickness of the rectangular plate is larger than that of other layers, generally ranges from 0.8mm to 2mm, and the common thickness is 1.5mm, so that the heat conduction and heat dissipation effects are mainly achieved. The surface of the metal heat dissipation layer is connected with an insulating layer, and the thickness of the insulating layer is thinner than that of the circuit substrate, generally 50um to 150um, and is usually 110 um. The circuit layer is made of metal such as copper and is insulated from the metal heat dissipation layer, the circuit layer comprises circuit lines made of etched copper foil, and the thickness of the circuit layer is relatively thin, such as about 70 um; or the circuit layer is formed by printing a paste-shaped conductive medium, and the conductive medium can be graphene, tin paste, silver paste and other conductive materials. Mounting sites for electronic components are provided on the circuit layer to mount the electronic components 50 and the leads 70.
In some embodiments of the present invention, the first substrate 10, the second substrate 20, and the third substrate 90 include a non-metal heat dissipation layer (not shown) and a circuit layer connected in sequence, wherein the first mounting surface 11 and the third mounting surface 91 are disposed on the circuit layer, and the first heat dissipation surface 12 and the third heat dissipation surface 92 are disposed on the non-metal heat dissipation layer. The difference from the previous embodiment is that the non-metal heat dissipation layer is used to replace the metal heat dissipation layer, the non-metal heat dissipation layer can be made of insulating materials with good heat conduction performance such as glass and ceramic, and the non-metal heat dissipation layer body is insulated, so that the insulating layer is omitted compared with the previous embodiment, the circuit layer is directly arranged on the surface of the non-metal heat dissipation layer, the process of the circuit layer is the same as that of the previous embodiment in the insulating layer, and the description is omitted here.
In a next embodiment of the present invention, the thin film circuit layer 80 is manufactured based on a flexible copper clad laminate process or a flex cable process. Referring to fig. 1 and 2, two thin film circuit layers 80 are sequentially electrically connected to the first substrate 10, the second substrate 20 and the third substrate 90 end to end, and are flexible soft structures, such as a flexible flat cable process similar to a connection circuit board of a mobile phone display screen.
Further, the thin film circuit layer 80 specifically includes an insulating thin film layer (not shown) located on the surface and a conductive medium layer (not shown) located in the insulating thin film layer. And the conductive medium layer may be integrally formed with the insulating layers of the first, second, and third substrates 10, 20, and 90, thereby facilitating production. When the first substrate 10, the second substrate 20, the third substrate 90 and the thin film circuit layer 80 are manufactured, as shown in fig. 1, the metal heat dissipation layer and the insulating layer of the first substrate 10, the second substrate 20 and the third substrate 90 may be manufactured at the same time, or the non-metal heat dissipation layer of these substrates and the insulating thin film layer of the thin film circuit layer 80 may be manufactured at the same time for a substrate having no metal heat dissipation layer, and a conductive medium may be simultaneously formed on the insulating layer or the non-metal heat dissipation layer and the insulating thin film layer of the first substrate 10, the second substrate 20 and the third substrate 90 by printing and other processes, so that the circuit layers of the first substrate 10, the second substrate 20 and the third substrate 90 and the conductive medium layer of the thin film circuit layer 80 are formed at the same time and integrally connected, which facilitates the manufacturing and indicates the manufacturing efficiency of the whole semi-finished product.
The thin film circuit layer 80 is configured as a flexible soft structure, so that the first substrate 10, the second substrate 20, and the third substrate 90 are stacked up and down and then electrically connected to each other at a short distance through the thin film circuit layer 80.
Further, in a lower embodiment of the present invention, as shown in fig. 1 and fig. 2, a plurality of jumper wires 60 are further disposed in the IPM module 100, and the plurality of jumper wires 60 electrically connect the plurality of electronic components 50; and/or a plurality of jumpers 60 electrically connect the electronic component 50 with the first mounting surface 11; and/or a plurality of jumpers 60 electrically connect the electronic component 50 with the third mounting surface 91; and/or a plurality of jumpers 60 electrically connect the electronic component 50 with the second mounting surface; and/or a plurality of jumpers 60 electrically connect the electronic components 50 with the thin film wiring layer 80.
Specifically, the jumper lines 60 may connect the electronic element 50 and the electronic element 50 on one substrate, may connect the electronic element 50 and a circuit layer, and may also serve as a jumper line to connect the circuit layer; the jumper wires 60 may also connect the electronic element 50 and the electronic element 50 on the thin film circuit layer 80, connect the electronic element 50 to a conductive medium layer, or be used as a jumper wire to connect the conductive medium layer; these jumpers 60 may also connect the substrate and the thin film wiring layer 80, such as connecting the electronic component 50 on the substrate and the conductive medium layer on the thin film wiring layer 80, or connecting the circuit layer on the substrate and the electronic component 50 on the thin film wiring layer 80, or connecting the circuit layer on the substrate and the conductive medium layer on the thin film wiring layer 80.
The jumper wire 60 is made of metal material, such as aluminum, copper, gold, silver and other materials with good welding and electric conductivity of substrates, and the connection of the jumper wire 60 can be realized through keys and machine binding wires. The jumpers 60, in combination with the electronic components 50 and the circuit layers on the substrates, together form the entire circuit of the IPM module 100.
In a next embodiment of the present invention, as shown in fig. 2, the heat sink 40 is two sub-heat sinks installed on the upper and lower surfaces of the IPM module, the contact surfaces of the two sub-heat sinks are respectively in contact with the first heat dissipation surface 12 and the third heat dissipation surface 92, and a plurality of heat dissipation fins 42 are further disposed on the heat sink, so as to increase the heat dissipation area and achieve better heat dissipation.
The present invention further provides a manufacturing method of the IPM module 100 according to the above embodiment, as shown in fig. 3, the manufacturing method includes the following steps:
step S100, horizontally placing the first substrate, the second substrate, the thin film circuit layer and the third substrate in a carrier;
step S200, arranging pins and a plurality of electronic elements containing power devices on a first mounting surface and a third mounting surface, and arranging a plurality of electronic elements not containing power devices on a second mounting surface to form a first semi-finished product;
step S300, electrically connecting the thin film circuit layer with a first mounting surface, a second mounting surface and a third mounting surface through jumpers to form a second semi-finished product;
step S400, bending the thin film circuit layer of the second semi-finished product to enable the first substrate, the second substrate and the third substrate to be sequentially stacked up and down to form a third semi-finished product, wherein the first mounting surface and the third mounting surface are inwards opposite to the third substrate, and the third semi-finished product is arranged in a packaging mold;
step S500, glue is poured into the packaging mold to form a packaging body, a third semi-finished product containing the packaging body forms a fourth semi-finished product, the packaging body is located between the first mounting surface and the second mounting surface, and the first heat dissipation surface and the second heat dissipation surface are exposed outwards;
and S600, respectively installing the radiators on the first radiating surface and the third radiating surface of the fourth semi-finished product.
In step S100, as shown in fig. 1, the first substrate 10, the second substrate 20, the thin film circuit layer 80 and the third substrate 90 may be placed in a special carrier (not shown), wherein the carrier may be made of a material with a high temperature resistance of 200 ℃ or higher, such as aluminum, synthetic stone, ceramic, PPS, etc.
It should be noted that, in step S100, before the substrate and the thin film circuit layer 80 are placed in the carrier, a plurality of processes for forming the first substrate 10, the second substrate 20, and the third substrate 90 may be further included. According to the technical scheme, the method comprises the following steps that according to the circuit layout, a metal heat dissipation layer with a proper size is designed, the metal heat dissipation layer is taken as an aluminum substrate for example, the aluminum substrate is formed in a mode of directly carrying out routing treatment on 1m multiplied by 1m aluminum material, a routing knife uses high-speed steel as a material, a motor rotates at a speed of 5000 revolutions per minute, and the routing knife is set at a right angle with the plane of the aluminum material; or may be formed by stamping. Then, an insulating layer is arranged on one surface of the metal heat dissipation layer, a copper foil is pressed on the surface of the insulating layer, then the copper foil is etched, and the copper foil is locally taken out to form a circuit layer, wherein the circuit layer comprises a circuit line and a pad arranged close to the side edge of the metal heat dissipation layer, the circuit layer of the first substrate 10 and the circuit layer of the second substrate 20 respectively form a first mounting surface 11 and a second mounting surface, the other exposed surface of the metal heat dissipation layer of the first substrate 10 forms a first heat dissipation surface 12, and the other exposed surface of the metal heat dissipation layer of the third substrate 90 forms a third heat dissipation surface 92.
When the first substrate 10, the second substrate 20, and the third substrate 90 are formed, the thin film circuit layer 80 may be formed at the same time, specifically, an insulating thin film layer may be formed first, and then a conductive medium layer is printed on the insulating thin film layer based on a printing process, it should be noted that the circuit layers of the first substrate 10, the second substrate 20, and the third substrate 90 may also be formed by printing the conductive medium layer by a printing process, and the circuit layers and the conductive medium layer of the first substrate 10, the second substrate 20, and the third substrate 90 may be integrally printed at the same time, thereby saving the process. Of course, the circuit layer and the conductive dielectric layer may be formed separately.
In step S200, as shown in fig. 1, when the first substrate 10, the second substrate 20, the thin film circuit layer 80 and the third substrate 90 are placed in a special carrier, the first heat dissipation surface 12 of the first substrate 10 faces upward, the first mounting surface 11 faces downward, the third mounting surface 91 of the third substrate 90 faces upward, the third heat dissipation surface 92 faces downward, and the electronic component 50 is mounted on the upward side, so the step can be performed as follows:
step S210, firstly, a solder paste or silver paste dispensing process is performed, a die bonder is used to attach a power device to a circuit layer of the upward-facing mounting surface of the third substrate 90 of the first substrate 10, and the second substrate 20 is also used to attach a power device, but the power devices have a much smaller heating power than the first substrate 10 and the third substrate 90, and other electronic components 50 such as a chip-packaged resistor, a capacitor, an MCU and the like are mounted on the upward-facing mounting surface by using an automatic chip bonder, specifically, the electronic components 50 are attached to the circuit layer of the upward-facing second upper mounting surface 21 of the second substrate 20 and the circuit layer of the third mounting surface 91 of the third substrate 90 of the structural component shown in fig. 1; the substrate on which the electronic component 50 is mounted is then passed through a reflow furnace to heat the substrate and solder the resistive elements to the component mounting sites of the corresponding circuit layers. Finally forming an intermediate first semi-finished product
Step S220, turning over the whole intermediate first semi-finished product, so that the mounting surface without the electronic component 50 among the first mounting surface 11, the second mounting surface and the third mounting surface 91 is upward arranged, arranging a plurality of electronic components 50 including power devices on the mounting surface among the upward first mounting surface 11 and the upward second mounting surface, and arranging a plurality of electronic components 50 not including power devices on the mounting surface of the upward third mounting surface 91, so as to form the first semi-finished product. Specifically referring to fig. 1, after the whole is turned over, the electronic component 50 is mounted on the first mounting surface 11 of the first substrate 10 and the second lower mounting surface 22 of the second substrate 20 on which the electronic component 50 is not mounted, and the mounting process is the same as that of the step S210, and is not repeated herein.
In step S300, as shown in fig. 1, similar to step S200, when the thin film circuit layer 80 is electrically connected to the mounting surface through the jumper 60, only the mounting surface disposed upward is conveniently operated, and therefore, the operation needs to be implemented by dividing into at least two sub-steps, which may be specifically divided into the following sub-steps:
step S310, electrically connecting the thin-film circuit layer 80 to the upward mounting surface of the first mounting surface 11, the second mounting surface, and the third mounting surface 91 through the jumper 60, respectively, to form an intermediate second semi-finished product. Specifically referring to fig. 1, the electronic components 50 on the second and third upper mounting surfaces 21 and 91 may electrically connect the jumper wires 60 with the thin film wiring layer 80 by a binding device. To form an intermediate second semi-finished product.
Step S320, the middle second semi-finished product is turned over so that the back surface faces upward, and the thin film circuit layer 80 is electrically connected to the upward mounting surface of the turned first mounting surface 11, the turned second mounting surface, and the turned third mounting surface 91 through the jumper wires 60, respectively, so as to form a second semi-finished product. Specifically referring to fig. 1, after the intermediate second semi-finished product is turned over, the electronic components 50 on the second lower mounting surface 22 and the first mounting surface 11 can electrically connect the jumper wires 60 with the thin film circuit layer 80 through a wire binding device. To form a second semi-finished product.
In step S400, as shown in fig. 2, each thin film circuit layer 80 of the second semi-finished product is bent, such that the first substrate 10, the second substrate 20, and the third substrate 90 are sequentially stacked up and down, and the first mounting surface 11 and the third mounting surface 91 are disposed inward and face both the upper and lower mounting surfaces of the second substrate 20 to form a third semi-finished product. The third semi-finished product is then placed in a packaging mold (not shown) in which a cavity for injection molding and packaging is formed, and the first heat dissipation surface 12 and the third heat dissipation surface 92 are exposed on both the upper and lower surfaces of the packaging mold.
In step S500, a thermoplastic material such as a resin is injected into the mold cavity until the entire cavity is filled, wherein the temperature in the cavity is generally about 180 ℃. After cooling, the thermoplastic material forms an encapsulation layer, and the first substrate 10, the second substrate 20, and the third substrate 90 are all covered with the encapsulation layer on the side on which the electronic component 50 and the leads 70 are mounted. And the first and third heat dissipation surfaces 12 and 92 are exposed from both the upper and lower surfaces of the package layer. To form a fourth semi-finished product.
Leads 70 extend from both sides of the package 30. It should be noted that if there are a plurality of second substrates 20, such as two, so as to form a four-layer substrate, the leads 70 extend from the same side of the package 30 after the film circuit layer 80 is bent, and all such substrates are within the scope of the present invention.
Further, the fourth semi-finished product can be subjected to pin 70 shearing and shaping, and an electrical parameter testing machine is used for carrying out electrical performance testing on the product.
In step S600, two upper and lower heat sinks 40 are finally attached to the first heat dissipation surface 12 and the third heat dissipation surface 92 of the fourth finished product, so as to dissipate the heat generated by the power devices on the first substrate 10 and the third substrate 90. And a plurality of heat dissipation fins 42 arranged in parallel are distributed on the surface of the heat sink 40, so as to further improve the heat dissipation area of the heat sink 40, thereby enhancing the heat dissipation capability of the heat sink to the power device.
The manufacturing method of the intelligent power module of the invention is that a first substrate 10, a second substrate 20 and a third substrate 90 are flatly arranged in a carrier, pins 70 and a plurality of electronic elements 50 containing power devices are arranged on a first mounting surface 11 and a third mounting surface 91, a plurality of electronic elements 50 not containing power devices are arranged on a second mounting surface to form a first semi-finished product, then a thin film circuit layer 80 is respectively and electrically connected with the first mounting surface 11, the second mounting surface and the third mounting surface 91 through jumpers 60 to form a second semi-finished product, the thin film circuit layer 80 of the second semi-finished product is bent to enable the first substrate 10, the second substrate 20 and the third substrate 90 to be sequentially superposed up and down to form a third semi-finished product, wherein the first mounting surface 11 and the third mounting surface 91 are inwards opposite to the third substrate 90, and the third semi-finished product is arranged in a packaging mold, and the package mold is filled with glue to form a package 30, a third semi-finished product containing the package 30 forms a fourth semi-finished product, the package 30 is located between the first mounting surface 11 and the second mounting surface, the first heat dissipation surface 12 and the second heat dissipation surface are exposed outwards, and finally the heat sink 40 is respectively mounted on the first heat dissipation surface 12 and the third heat dissipation surface 92 of the fourth semi-finished product. Therefore, the IPM module 100 forms a structure of at least three substrates stacked up and down for packaging, and the substrates can be mounted with the electronic component 50, so that the circuit distribution density of the module is effectively improved, the surface area of the IPM module 100 is effectively reduced, the IPM module 100 can be effectively miniaturized, and the cost is reduced. Due to the structural mode of at least three layers, a circuit of a high-voltage power device with large heat productivity and a low-voltage control circuit with small heat productivity can be completely isolated, for example, the circuit containing the power device is arranged on the upper and lower first substrates 10 and 90, and the low-voltage control circuit with small heat productivity is arranged on the middle third substrate 90, so that the electrical distance between the circuit and the third substrate is realized, the interference of the high-voltage power device on the low-voltage control circuit is reduced, and the working stability and reliability of the IPM module 100 are improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. A smart power module, comprising:
at least three layers of substrates which are arranged oppositely from top to bottom, wherein a first substrate and a third substrate are arranged on the upper outer side and the lower outer side, and at least one second substrate is arranged between the first substrate and the third substrate, the first substrate comprises a first mounting surface and a first heat dissipation surface for heat dissipation, the third substrate comprises a third mounting surface and a third heat dissipation surface for heat dissipation, the first mounting surface and the second mounting surface are arranged in a downward direction, the first heat dissipation surface and the third heat dissipation surface are arranged in an outward direction, and at least one surface of the second substrate is provided with a second mounting surface;
a plurality of electronic components mounted on the first mounting surface, the second mounting surface, and the third mounting surface, wherein the electronic components mounted on the first mounting surface and the third mounting surface generate heat more than the electronic components mounted on the second mounting surface;
at least two flexible thin film circuit layers for electrically connecting the first substrate and the second substrate and for electrically connecting the second substrate and the third substrate;
the pins are arranged and electrically connected to one ends of the first substrate and the third substrate;
the packaging body at least wraps and fills the space between the first mounting surface and the third mounting surface, and the pins are exposed out of the packaging body;
and the radiator is arranged on the first radiating surface and the third radiating surface.
2. The intelligent power module of claim 1, wherein the second substrate is a fiberglass board or a flexible copper clad board with circuit layers arranged on both sides.
3. The smart power module of claim 2, wherein the circuit layer of the second substrate is configured with a low voltage control circuit to control the operation of the circuits including the power devices on the first and third substrates.
4. The smart power module of claim 1 wherein the electronic components mounted on the first and third mounting surfaces comprise power devices.
5. The smart power module of claim 1, wherein the first, second, and third substrates comprise a metal heat sink layer, an insulating layer, and a circuit layer connected in sequence, wherein the first and third mounting surfaces are disposed on the circuit layer, and the first and third heat sink surfaces are disposed on the metal heat sink layer.
6. The smart power module of claim 1, wherein the first substrate, the second substrate, and the third substrate comprise a non-metal heat dissipation layer and a circuit layer connected in sequence, wherein the first mounting surface and the third mounting surface are disposed on the circuit layer, and the first heat dissipation surface and the third heat dissipation surface are disposed on the non-metal heat dissipation layer.
7. The intelligent power module as claimed in claim 5 or 6, wherein the thin film circuit layer comprises an insulating thin film layer on the surface and a conductive medium layer positioned in the middle of the insulating thin film layer, and the thin film circuit layer is manufactured based on the flexible copper clad laminate process or the wire arranging process; the conductive medium layer and the circuit layer are integrally formed.
8. A method of manufacturing a smart power module according to any one of claims 1 to 7, comprising the steps of:
horizontally placing the first substrate, the second substrate, the thin film circuit layer and the third substrate in a carrier;
arranging pins and a plurality of electronic elements containing power devices on the first mounting surface and the third mounting surface, and arranging a plurality of electronic elements not containing power devices on the second mounting surface to form a first semi-finished product;
respectively and electrically connecting the thin film circuit layer with the first mounting surface, the second mounting surface and the third mounting surface through jumpers to form a second semi-finished product;
bending the film circuit layer of the third semi-finished product to enable the first substrate, the second substrate and the third substrate to be sequentially superposed up and down to form a fourth semi-finished product, wherein the first mounting surface and the second mounting surface are inwards opposite to the third substrate, and the fourth semi-finished product is arranged in a packaging mold;
performing glue filling on the packaging mold to form a packaging body, and forming a fifth semi-finished product by a fourth semi-finished product containing the packaging body, wherein the packaging body is positioned between the first mounting surface and the second mounting surface, and the first heat dissipation surface and the second heat dissipation surface are exposed outwards;
and respectively installing a radiator on the first radiating surface and the third radiating surface of the fifth semi-finished product.
9. The method of manufacturing a smart power module as recited in claim 8, wherein the step of forming a first semi-finished product comprises:
arranging pins and a plurality of electronic elements containing power devices on the upward mounting surface of the first mounting surface and the third mounting surface, and arranging a plurality of electronic elements not containing power devices on the upward mounting surface of the second mounting surface to form an intermediate first semi-finished product;
and turning the middle first semi-finished product integrally to enable the mounting surface which is not provided with the electronic element to be arranged upwards in the first mounting surface, the second mounting surface and the third mounting surface, arranging a plurality of electronic elements containing power devices on the mounting surface of the upwards first mounting surface and the upwards second mounting surface, and arranging a plurality of electronic elements not containing power devices on the mounting surface of the upwards third mounting surface to form the first semi-finished product.
10. The method of manufacturing a smart power module as recited in claim 8, wherein the step of forming a second semi-finished product comprises:
respectively and electrically connecting the thin film circuit layer with the upward mounting surface of the first mounting surface, the second mounting surface and the third mounting surface through jumper wires to form a middle second semi-finished product;
and turning the middle second semi-finished product to enable the back surface to be upward, and electrically connecting the thin film circuit layer with the upward mounting surface in the turned first mounting surface, the turned second mounting surface and the turned third mounting surface through jumpers to form a second semi-finished product.
CN202011463548.1A 2020-12-11 2020-12-11 Intelligent power module and manufacturing method thereof Pending CN112490232A (en)

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CN202011463548.1A CN112490232A (en) 2020-12-11 2020-12-11 Intelligent power module and manufacturing method thereof

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113571507A (en) * 2021-03-16 2021-10-29 广东汇芯半导体有限公司 Intelligent power module and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113571507A (en) * 2021-03-16 2021-10-29 广东汇芯半导体有限公司 Intelligent power module and manufacturing method thereof

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