CN112490131A - Lead frame preparation method based on etching process - Google Patents
Lead frame preparation method based on etching process Download PDFInfo
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- CN112490131A CN112490131A CN202011357077.6A CN202011357077A CN112490131A CN 112490131 A CN112490131 A CN 112490131A CN 202011357077 A CN202011357077 A CN 202011357077A CN 112490131 A CN112490131 A CN 112490131A
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- 238000005530 etching Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 239000002861 polymer material Substances 0.000 claims abstract description 26
- 229920006254 polymer film Polymers 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 15
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract 2
- 239000011888 foil Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005056 compaction Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 239000002998 adhesive polymer Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 Polydimethylsiloxane Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention relates to the preparation of a lead frame of an integrated circuit, in particular to a lead frame preparation method based on an etching process, which aims to solve the technical problem that the production cost is overhigh because photoresist in the processing process of the existing etching method can only be used once. The lead frame preparation method comprises the following steps: processing a metal thin plate or a polymer film material into a mask plate with a lead frame pattern, and coating viscous polymer materials such as PDMS on one surface of the mask plate; tightly attaching one surface of the mask plate with the viscous polymer material to a copper substrate to be etched, and pressing in vacuum; placing the mixture in FeCl with the temperature of 40-100 ℃ and the concentration of 0.1-0.6 g/ml3Etching in the solution; and taking the etched copper substrate off the mask plate to obtain the required lead frame. The invention adopts the mask plate which can be recycled, realizes the production of the high-density and multi-pin lead frame, ensures the etching precision to a great extent and reduces the manufacturing cost.
Description
Technical Field
The invention relates to the preparation of a lead frame of an integrated circuit, in particular to a lead frame preparation method based on an etching process.
Background
The integrated circuit is the core of various electronic products and is mainly formed by packaging a semiconductor chip, a lead frame and the like, wherein the lead frame mainly plays a role in connecting the chip with the outside and is a key component for manufacturing the integrated circuit. With the development of electronic information products toward miniaturization, thinning, light weight, multi-functionalization and intellectualization, integrated circuits are developed toward large-scale integrated circuits and very large-scale integrated circuits, and copper-based lead frames are developed toward high precision, fine lead pitch and multi-pin. At present, the ultra-thin lead frame becomes a development hotspot and is reduced from the past 0.25mm to 0.05-0.08 mm; the pitch of the leads also gradually decreased, reaching 0.1 mm. The small distance can not be completed by adopting a hard alloy stamping die, the efficiency of manufacturing the lead frame by a stamping method is high, but the problems of burrs and oil stains exist, the processing precision is difficult to guarantee, and the requirements of high density and high precision of an integrated circuit can not be met. And the production of the lead frame with the highest density and the largest pin number can be realized by adopting an etching forming processing mode.
The etching method is a stress-free processing means, firstly, a photosensitive resist is used for protecting a workpiece part, and then a strong oxidant is used for etching away other parts, and finally, the required element is obtained. The etching lead frame is different from the traditional stamping lead frame, and the lead frame is manufactured by using a photoetching method. Similar to the etching process of printed circuit boards, the basic principle is as follows: by utilizing the photosensitive characteristic of the chemical photosensitive material, a resist pattern mask is formed on the metal substrate, and a part of metal is corroded by the corrosive to obtain the required product. The etching processing is divided into full etching and half etching, and comprises two steps of film preparation and etching forming, and the specific process flow is as follows: feeding → material cleaning → film sticking → exposure → development → etching → film removal → cleaning and color change prevention → automatic inspection → material receiving. The etching method is adopted, the production of high-density and multi-pin lead frames can be well realized, the etching method becomes the mainstream of the manufacture of high-precision lead frames, and the requirements of the etching method on the internal stress, the warping degree, the surface quality, the etching performance and the like of the copper alloy plate strip are more strict than those of the punching method. However, the photoresist used in the existing etching method can only be used once, and the cost is too high in mass production.
Disclosure of Invention
The invention aims to provide a lead frame preparation method based on an etching process, which aims to solve the technical problems that a photoresist in the processing process of the existing etching method can only be used once, and the cost is overhigh during mass production. The metal mask plate in the lead frame etching process can be recycled, and the manufacturing cost is reduced while the etching precision is ensured.
In order to achieve the purpose, the invention adopts the technical scheme that:
the lead frame preparation method based on the etching process is characterized by comprising the following steps:
and 5, returning to the step 2, and preparing the next lead frame until all the lead frames are prepared.
Further, in step 1, a metal sheet is used to manufacture a mask plate, specifically:
1.1) evaporating oxides on all surfaces of the metal sheet;
1.2) coating a viscous polymer material on one surface of the metal sheet plated with the oxide on the surface;
1.3) processing a metal sheet into a mask plate with a lead frame pattern according to a preset lead frame pattern;
1.4) evaporating oxide on the exposed surface of the processed mask plate;
or, specifically:
1.1) processing a metal sheet into a mask plate with a lead frame pattern according to a preset lead frame pattern;
1.2) evaporating oxides on all surfaces of a mask plate;
1.3) coating a viscous polymer material on one side of the mask plate.
Further, in step 1, a mask plate is manufactured by using a polymer thin film material, which specifically comprises:
1.1) coating a viscous polymer material on one side of the polymer film material;
1.2) processing a polymer film material into a mask plate of a lead frame pattern according to a preset lead frame pattern;
or, specifically:
1.1) processing a polymer film material into a mask plate of a lead frame pattern according to a preset lead frame pattern;
1.2) coating a viscous polymer material on one side of the mask plate.
Further, in step 1, the adhesive polymer material is PDMS (Polydimethylsiloxane) or photoresist, and is used for low-viscosity adhesion, which is beneficial to directly peeling the lead frame from the mask plate.
Further, in the process of manufacturing the mask plate by using the metal sheet, the oxide is Al2O3、HfO2Or TiO2。
Further, in the process of manufacturing a mask plate by using the metal sheet, laser processing or ICP etching is adopted to process the metal sheet; the metal sheet is an aluminum foil.
Furthermore, when the polymer film material is used for manufacturing the mask plate, the polymer film material is a PEN film or a PI film and cannot react with etching liquid FeCl3The solution reacts.
Furthermore, in the step 2, the metal mask plate is tightly attached to the substrate to be etched, and the vacuum compression or mechanical compression is adopted to realize the close attachment, so that the pattern on the mask plate is well transferred to the substrate to be etched.
Further, in step 3, the FeCl is3The temperature of the solution is 60-80 ℃, and the etching effect is best.
Further, in step 2, the substrate to be etched is a copper substrate with a thickness of less than 0.3 mm.
The invention has the beneficial effects that:
1. the lead frame preparation method based on the etching process can well realize the production of high-density and multi-pin lead frames, and the mask plate used in the etching process can be reused, thereby ensuring the precision, greatly reducing the manufacturing cost and realizing energy conservation and environmental protection to the greatest extent.
2. The invention adopts FeCl3The solution is etched, so that the reaction with the oxide on the surface of the mask plate made of the metal sheet can be avoided, and the mask plate can be recycled.
3. When the metal sheet is used for manufacturing the mask plate, the metal foil has certain flexibility, and viscous polymer materials such as PDMS or photoresist are coated on one surface of the metal foil, so that the metal foil can be tightly attached to a substrate to be etched, and the etching effect is ensured.
4. According to the invention, the mask plate and the substrate to be etched are compressed in vacuum, so that the attaching degree of the mask plate and the substrate to be etched can be ensured, and the etching effect is ensured; the mask plate and the substrate to be etched are coated with low-viscosity viscous polymer materials such as PDMS (polydimethylsiloxane) or photoresist, so that the separation of the mask plate and the substrate (lead frame) after etching can be ensured.
5. The invention adopts laser processing or ICP (inductively coupled plasma) etching processing metal sheet, which can ensure the processing precision and further ensure the etching precision of the lead frame.
6. The mask plate is made of the polymer film material, the surface does not need to be evaporated with oxide and does not react with the etching liquid, the processing cost can be saved, and the reuse of the mask plate is realized.
Drawings
Fig. 1 is a process of manufacturing a mask plate by using a metal thin plate in embodiment 1 of the present invention; wherein (a) an adhesive polymer material is coated on a metal thin plate coated with an oxide on the surface; (b) laser processing a metal sheet; (c) processing a mask plate with a lead frame graph; (d) evaporating oxide on the exposed side of the processed mask plate;
fig. 2 is a schematic view of close attachment of a metal mask plate and a copper substrate in embodiment 1 of the present invention;
fig. 3 is a schematic diagram of the etched lead frame in embodiment 1 of the present invention (the metal mask plate is not removed).
Description of reference numerals:
1-metal sheet, 2-oxide, 3-viscous polymer material, 4-substrate to be etched, 5-mask plate and 6-lead frame.
Detailed Description
In order to more clearly explain the technical solution of the present invention, the following detailed description of the present invention is made with reference to the accompanying drawings and specific examples.
The basic process flow of the lead frame preparation based on the etching process comprises the following steps: feeding → material cleaning → film pasting → etching → film removing → cleaning and color change prevention → automatic inspection → material receiving. According to the etching process, the mask plate is pressed with the substrate to be etched, the mask plate is separated from the lead frame after etching is completed, and the mask plate can be recycled. The mask plate can be made of a metal thin plate or a polymer thin film material.
Example 1
A mask plate 5 which can be recycled is manufactured by utilizing a metal sheet 1, and the specific steps of the mask etching method are as follows:
1) coating a viscous polymer material 3 such as PDMS or photoresist on the surface and plating Al2O3、HfO2、TiO2The metal sheet 1 of oxide 2 is coated with a photoresist for low viscosity adhesion, not for etching. A mask plate 5 with a pattern (a preset lead frame pattern) is prepared through a laser processing or ICP etching process, and an oxide 2 is evaporated on a processed exposed surface. Fig. 1 is a process of manufacturing a mask plate 5 using a metal thin plate 1, in which (a) an adhesive polymer material 3 is coated on the metal thin plate 1 having an oxide 2 plated on the surface; (b) laser processing the metal sheet 1; (c) a mask plate 5 with a lead frame graph is processed; (d) the oxide 2 is deposited on the exposed side of the mask plate 5 after processing.
Alternatively, the metal thin plate 1 may be processed into a mask plate 5 having a lead frame pattern, the oxide 2 may be deposited on all surfaces of the mask plate 5, and then the adhesive polymer material 3 may be applied to one surface of the mask plate 5.
The metal sheet 1 may be a metal foil coated with a layer of oxide material to prevent it from being mixed with an etching solution (FeCl)3Solution) to react; moreover, the metal foil has a certain degreeFlexibility, wherein a sticky polymer material 3 such as PDMS or photoresist is coated on one surface of the flexible substrate, and can be tightly attached to a substrate 4 to be etched; in addition, the viscosity of the viscous polymer material 3 such as PDMS or photoresist is smaller, and the peeling strength is 0.25N/mm-0.4N/mm, so that the viscous polymer material can be directly peeled from the etched lead frame 6.
The metal sheet 1 can be an aluminum foil or an aluminum plate, the thickness is 0.1mm-2mm, and if the thickness is too thin, the metal sheet is not suitable for repeated use; too thick can result in too long a laser machining or ICP etching time. In this embodiment, an aluminum foil is used as the metal thin plate 1.
2) As shown in fig. 2, one surface of the mask plate 5 with the adhesive polymer material 3 such as PDMS or photoresist is attached to the substrate 4 to be etched, and the substrate 4 to be etched to which the mask plate 5 is attached is placed in vacuum so that the two are closely attached together. Because the viscous polymer material 3 such as PDMS or photoresist is arranged between the mask plate 5 and the substrate 4 to be etched, no air bubble residue exists between the mask plate 5 and the substrate 4 to be etched during vacuum compaction, so that the pattern on the mask plate 5 can be well transferred to the substrate 4 to be etched in the etching process.
In this embodiment, the substrate 4 to be etched is a copper substrate, and the thickness is generally less than 0.3mm, and the thicknesses generally adopted include 0.254mm, 0.203mm, 0.152mm, and 0.127 mm.
In addition, the mask plate 5 and the substrate 4 to be etched can be tightly adhered together by mechanical pressing.
3) Placing a copper substrate to be etched (tightly attached with a mask plate 5) in FeCl at the temperature of 40-100 DEG C3The lead frame 6 is etched in a solution (concentration of 0.1g/ml to 0.6 g/ml). Etching liquid selects FeCl3Solution, which does not react with the oxide 2 plated on the surface of the mask plate 5, FeCl in this embodiment3The solution temperature was set at 60-80 ℃ with best results and the schematic diagram after etching is shown in fig. 3.
Using FeCl3The etching mechanism of the solution is as follows:
Fecl3+Cu→Fecl2+Cucl
Fecl3+Cucl→Fecl2+Cucl2
Cucl2+Cu→2Cucl
4) the etched metal lead frame 6 is removed from the mask plate 5.
Because the viscosity of the viscous polymer material 3 such as PDMS or photoresist is low, the metal lead frame 6 and the mask plate 5 can be directly stripped, and the metal lead frame 6 can also be stripped by adopting heating and other modes without damaging the lead frame 6. The removed mask plate 5, i.e. the aluminum foil with the specific pattern, can be reused.
Example 2
The difference between this embodiment and embodiment 1 is that the material for manufacturing the mask plate is selected from polymer thin film materials such as PEN, PI, and the like.
Coating viscous polymer materials such as PDMS or photoresist on one surface of polymer film materials such as PEN and PI, and processing the polymer film materials into a mask plate with lead frame patterns according to preset lead frame patterns. Or processing the polymer film material into a mask plate of the lead frame pattern according to a preset lead frame pattern, and coating a viscous polymer material such as PDMS or photoresist on one surface of the polymer film material.
The polymer film material does not react with etching liquid FeCl3The solution reacts and therefore no oxide is applied to its surface.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the technical solutions of the present invention, and any known modifications made by those skilled in the art based on the main technical concepts of the present invention are within the technical scope of the present invention.
Claims (10)
1. A lead frame preparation method based on an etching process is characterized by comprising the following steps:
step 1, manufacturing a mask plate by using a metal sheet or a polymer film material, and coating a viscous polymer material with peel strength of 0.25N/mm-0.4N/mm on one surface of the mask plate;
step 2, tightly attaching one surface of the mask plate with the viscous polymer material to a substrate to be etched;
step 3, mask plate tightly attached to the mask platePlacing the base material to be etched in FeCl with the temperature of 40-100 ℃ and the concentration of 0.1-0.6 g/ml3Etching in the solution;
step 4, taking down the etched substrate from the mask plate to obtain a required lead frame;
and 5, returning to the step 2, and preparing the next lead frame until all the lead frames are prepared.
2. The method for manufacturing the lead frame based on the etching process, according to claim 1, is characterized in that in the step 1, a metal sheet is used for manufacturing a mask plate, and specifically, the method comprises the following steps:
1.1) evaporating oxides on all surfaces of the metal sheet;
1.2) coating a viscous polymer material on one surface of the metal sheet plated with the oxide on the surface;
1.3) processing a metal sheet into a mask plate with a lead frame pattern according to a preset lead frame pattern;
1.4) evaporating oxide on the exposed surface of the processed mask plate;
or, specifically:
1.1) processing a metal sheet into a mask plate with a lead frame pattern according to a preset lead frame pattern;
1.2) evaporating oxides on all surfaces of a mask plate;
1.3) coating a viscous polymer material on one side of the mask plate.
3. The method for manufacturing the lead frame based on the etching process, according to claim 1, is characterized in that in the step 1, a mask plate is manufactured by using a polymer film material, and specifically, the method comprises the following steps:
1.1) coating a viscous polymer material on one side of the polymer film material;
1.2) processing a polymer film material into a mask plate of a lead frame pattern according to a preset lead frame pattern;
or, specifically:
1.1) processing a polymer film material into a mask plate of a lead frame pattern according to a preset lead frame pattern;
1.2) coating a viscous polymer material on one side of the mask plate.
4. The method for manufacturing a lead frame based on an etching process according to claim 1, 2 or 3, wherein: in step 1, the viscous polymer material is PDMS or photoresist.
5. The etching process-based lead frame preparation method according to claim 2, characterized in that: the oxide is Al2O3、HfO2Or TiO2。
6. The etching process-based lead frame preparation method according to claim 2, characterized in that: processing the metal sheet by laser processing or ICP etching; the metal sheet is an aluminum foil.
7. The etching process-based lead frame preparation method according to claim 3, characterized in that: the polymer film material is a PEN or PI film.
8. The etching process-based lead frame preparation method according to claim 4, wherein: in the step 2, the mask plate is tightly attached to the substrate to be etched, and the vacuum compaction or mechanical compaction mode is adopted.
9. The etching process-based lead frame preparation method according to claim 8, wherein: in step 3, the FeCl3The temperature of the solution is 60-80 ℃.
10. The etching process-based lead frame preparation method according to claim 9, characterized in that: in the step 2, the base material to be etched is a copper base material with the thickness of less than 0.3 mm.
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| CN202011357077.6A CN112490131A (en) | 2020-11-27 | 2020-11-27 | Lead frame preparation method based on etching process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113321A (en) * | 2021-03-26 | 2021-07-13 | 昆山弗莱吉电子科技有限公司 | Semiconductor high-density lead frame and manufacturing process thereof |
| CN113430636A (en) * | 2021-07-12 | 2021-09-24 | 南京航空航天大学 | Metal electric heating wire electrolytic etching method based on movable mask plate |
| CN114566433A (en) * | 2021-12-31 | 2022-05-31 | 昆山弗莱吉电子科技有限公司 | Preparation method of multilayer aluminum alloy lead frame and multilayer aluminum alloy lead frame |
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