CN112410742A - In Al2O3Method for plating nano-scale copper film on surface of ceramic substrate by magnetron sputtering - Google Patents
In Al2O3Method for plating nano-scale copper film on surface of ceramic substrate by magnetron sputtering Download PDFInfo
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- CN112410742A CN112410742A CN202011188724.5A CN202011188724A CN112410742A CN 112410742 A CN112410742 A CN 112410742A CN 202011188724 A CN202011188724 A CN 202011188724A CN 112410742 A CN112410742 A CN 112410742A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
Abstract
The invention provides a method for preparing Al2O3The method for plating nano-level copper film on the surface of ceramic matrix by magnetron sputtering is to use magnetron sputtering to plate Al2O3The ceramic substrate is plated with the nano-copper film, so that the film layer has better protection to the substrate, and good conductivity and film-substrate binding force are realized; the prepared plating layer is compact and flat, has higher hardness, better wear resistance, reduced wear rate and enhanced high-temperature oxidation resistance, thereby improving the microstructure of the material and the comprehensive performance of the material, and simultaneously the film layer has good electrical performance.
Description
Technical Field
The invention belongs to the technical field of metal surface coatings, and particularly relates to Al-based coating2O3A preparation method of copper plating metallization on the surface of a ceramic matrix.
Background
Al2O3The ceramic matrix is an inorganic non-metallic material, has high melting point, hardness and chemical stability, has the characteristics of high temperature resistance, corrosion resistance, wear resistance, good insulativity and the like, and is widely used for manufacturing daily products and mechanical parts. Along with the increasing living standard of people, for Al2O3The requirements of the performance of the ceramic material are not limited in the aspect of service performance, and the surface of the ceramic material is colored, so that the service life is prolonged, the elegant appearance is obtained, and the application range of the ceramic material is greatly widened. The ceramic surface metallization combines good mechanical properties of ceramic and excellent electric and heat conducting properties of metal materials, and the ceramic material has the excellent properties of high strength, high wear resistance, high temperature resistance, small thermal expansion coefficient and the like of ceramic materials, and also has the plasticity and toughness of metal materials.
At present, a plurality of methods for metallizing ceramics are available, and electroplating, chemical plating and sol-gel methods can be used for Al2O3The most used chemical plating method is on the ceramic substrate, but the operation is complex, the purity is low, the surface roughness is large, the compactness and the bonding force are poor, and the environment is easily polluted. The magnetron sputtering method is a physical vapor deposition method with wide application, has simple equipment and can realize batch automatic production. By using the technology, not only can a metal film and an alloy film be deposited on the surface of a substrate, but also various films can be depositedCompounds, non-metals, semiconductors, ceramics, plastic films, and the like. The metal film plated by the magnetron sputtering technology has the characteristics of simple operation, no environmental pollution, low sputtering temperature, high sputtering speed and the like, and the prepared metal film has high purity, uniform and compact structure and high bonding strength with a substrate, and simultaneously has good electrical properties, so the metal film is widely applied to surface modification of materials. But based on magnetron sputtering treatment of Al2O3The research on copper plating on the surface of the ceramic substrate is only reported, so that the research on Al is few2O3Magnetron sputtering copper plating on the surface of the ceramic has important significance for the development of the industry.
The chinese patent with application number 200610015536.6 discloses a method for plating a nano-copper film on the surface of SiC microparticles by magnetron sputtering. Aiming at the defects of poor uniformity, low purity and weak adhesive force of the film plated on the current particles, a novel method capable of depositing metal copper films with different thicknesses on the surfaces of the particles is provided according to the characteristics of the particles, and the uniformity, the purity, the compactness and the adhesive force of the film on the surfaces of the particles can be obviously improved. The Chinese patent with the application number of 200510029905.2 discloses a method for chemically plating copper on the surface of SiC ceramic particles, which aims at the problems of expensive activating agent, strict pretreatment requirement, difficult operation, non-uniform plating layer, no copper plating and the like at present, and provides a method for chemically plating copper, which is simple and easy to implement and low in cost, and the prepared copper plating layer on the surface of the ceramic particles is uniformly coated. At present, the magnetron sputtering method is adopted for Al2O3The patent of depositing copper film on the surface of the ceramic substrate is not reported, so the invention researches the magnetron sputtering plating nano-copper film process and realizes the good conductivity and film-substrate binding force of the film layer.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides Al2O3A method for depositing a nano-copper film on the surface of a ceramic substrate. The preparation method adopts magnetron sputtering technology, and changes the process conditions of working pressure, sputtering power, temperature, sputtering time and the like in a vacuum chamber to prepare Al2O3Depositing a copper film on the surface of the ceramic substrate to obtain a uniform and continuous copper filmThe film layer material strengthens the binding force between film layers and greatly improves the hardness of the film layer.
The technical scheme of the invention is that Al2O3The method for plating the nano-copper film on the surface of the ceramic substrate by magnetron sputtering comprises the following steps:
(1) matrix treatment: mixing Al2O3Ultrasonically cleaning the ceramic matrix in acetone for 10 minutes, ultrasonically cleaning the ceramic matrix with ethanol for 2 times, and taking out and drying the ceramic matrix;
(2) preparing equipment: adopting a magnetron sputtering film plating machine, selecting 3 Cu, Al and Ni elementary substance targets with the purity of 99.99 percent, and adopting Ar gas and N with the purity of 99.99 percent as working gas2And (4) qi.
(3) Putting the substrate treated in the step (1) into a furnace, and pumping the air pressure in a vacuum chamber to 3 x 10-3Pa, filling sputtering gas argon, performing ion bombardment for 10min, wherein the flow of the argon is 5-20sccm, the sputtering pressure is 0.5-0.9Pa, the input power of the plasma source is 200-1000W, starting auxiliary heating, and heating to 350 ℃.
(4) Depositing an Al transition layer: opening a magnetron sputtering Al target power supply, applying a strong magnetic field with the magnetic field intensity of 0-10T, and adjusting the gas ratio Ar to N2Regulating the sputtering power to 50-100W, keeping the simple substance target current at 50-70A, controlling the negative bias voltage at-800 to-850V, controlling the coating time to be 0.5min and controlling the film thickness to be 10-15nm as 5:1-8: 1.
(5) Depositing a Ni transition layer: opening a magnetron sputtering Ni target power supply, applying a strong magnetic field with the magnetic field intensity of 0-10T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 150W-180W, keeping the current of the simple substance target at 60-70A, controlling the negative bias at-700V, the temperature at 50-70 ℃, the coating time at 1min-2min and the thickness of the film at 25-100nm when the ratio is 3:1-5: 1.
(6) Turning on a magnetron sputtering Ni target power supply, applying a strong magnetic field with the magnetic field intensity of 0-10T, and adjusting the working gas ratio Ar: n is a radical of2Adjusting the sputtering power to 150W-180W, keeping the current of the simple substance target at 60-70A, controlling the negative bias at-500V, the temperature at 50-70 ℃, the coating time at 1min-2min, and the thickness of the film at 20-30nm when the ratio is 3:1-5: 1.
(7) Turning on the magnetron sputtering Ni target power supplyApplying a strong magnetic field for coating, wherein the magnetic field intensity is 5-10T, and adjusting the gas proportion Ar: n is a radical of2Adjusting the sputtering power to 150W-180W, keeping the current of the simple substance target at 60-70A, controlling the negative bias voltage at-100V and 200V, the temperature at 50-70 ℃, the coating time at 1min-2min, and the thickness of the film at 20-30nm when the ratio is 3:1-5: 1.
(8) Heating the whole substance obtained in the step (7) for 1-1.5h, raising the temperature to 650-700 ℃ and promoting the mutual diffusion between Ni and Al.
(9) Turning on a Cu target power supply, and adjusting the ratio of Ar to N of working gas21:1-3:1, controlling the working pressure at 3.0-4.0Pa, keeping the current of the Cu simple substance target at 70-80A, controlling the negative bias at 250V at the temperature of 300 ℃, depositing the Cu film layer for 20-60min, and controlling the film thickness at 1-2 mu m.
(10) And after the deposition is finished, closing the nitrogen and the argon, closing the power supply, naturally cooling the temperature in the vacuum cavity, taking out the sample, and finishing the film coating.
The invention has the beneficial effects that:
(1) the difference of the thermal expansion coefficients of the ceramic and the metal is large, the joint is easy to generate large residual stress, the connection strength is low, and the ceramic and the metal are easy to lose efficacy in the use process. In order to effectively achieve metal-ceramic bonding and improve the efficiency of use of the composite material, a stable and strong interface must be formed. By using Al2O3System formed of Al due to Al2O3The interface of-Al is the simplest binary heterogeneous interface, so that the connection of aluminum oxide and aluminum has very wide application value. Further, Al and Al2O3The silicon nitride film has the same close-packed hexagonal crystal structure, and the bonding force between the substrate and the film layer is stronger, so that the film layer has better protection on the substrate. The Al film layer has good conductivity, and is deposited on the surface of the matrix without electrostatic accumulation.
(2) Adopts a Ni transition layer with catalytic action and relatively low price, and after heat treatment, Al and Ni are mutually diffused2O3Introducing metal nickel, Ni and Al on the surface2O3The new phases (Ni, NiO, Ni) formed by the chemical interaction between the two phases2O3) In contrast, Al2O3All have moreHigh conductivity, enhanced wettability of ceramic surface and improved interface bonding strength, Al2O3The ceramic surface has more activity, can catalyze the copper plating reaction, and improve the binding force between coatings.
(3) The strong magnetic field has the function of grain refinement, can well inhibit the abnormal grain growth process of nickel, and greatly improves the uniformity of microstructure. Convection is generated by Lorentz force under a strong magnetic field, and the dispersing ability is improved. The prepared plating layer is compact and flat, has higher hardness, better wear resistance, reduced wear rate and enhanced high-temperature oxidation resistance, thereby improving the microstructure of the material and enhancing the comprehensive performance of the material.
(4) By changing the process conditions of working air pressure, sputtering power, temperature, vacuum degree, sputtering time and the like in the vacuum chamber, the prepared metal film layer has uniform and compact structure and high bonding strength with the base material, and meanwhile, the film layer has good electrical properties.
Drawings
FIG. 1 is a schematic view of a magnetron sputtering apparatus used in the method of the present invention.
FIG. 2 shows Al of the present invention2O3The cross section structure chart of the ceramic matrix plated with the nano-copper film.
In the figure: 1. the device comprises a radio frequency power supply, a radio frequency matcher, a plasma generating source, a cooling water inlet, a cooling water outlet, a superconducting magnet, an Al target, a superconducting magnet, an Ni target, a superconducting magnet, a Cu target, a superconducting magnet, a pulse power supply, a substrate placing table, an air inlet, an air outlet, a deposition chamber and a pulse power supply, wherein the radio frequency power supply is 2, the plasma;
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
Example 1
In Al2O3The method for plating the nano-copper film on the surface of the ceramic substrate by magnetron sputtering comprises the following steps:
(1) sample treatment: mixing Al2O3Ultrasonically cleaning the ceramic matrix in acetone for 10 minutes, ultrasonically cleaning the ceramic matrix with ethanol for 2 times, and taking out and drying the ceramic matrix;
(2) preparing equipment: adopting a magnetron sputtering film plating machine, selecting 3 Cu, Al and Ni elementary substance targets with the purity of 99.99 percent, and adopting Ar gas and N with the purity of 99.99 percent as working gas2And (4) qi.
(3) Putting the sample treated in the step (1) into a furnace, and pumping the air pressure in a vacuum chamber to 3 multiplied by 10-3Pa, filling sputtering gas argon, performing ion bombardment for 10min, wherein the flow of the argon is 20sccm, the sputtering pressure is 0.9Pa, the power of a plasma source is 1000W, starting auxiliary heating, and heating to 350 ℃.
(4) Depositing an Al transition layer: opening a magnetron sputtering Al target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 10T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 100W as 8:1, keeping the current of the simple substance target at 70A, controlling the negative bias voltage at-850V, controlling the coating time to be 0.5min, and controlling the thickness of the film layer to be 15 nm.
(5) Depositing a Ni transition layer: turning on a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 10T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 180W, keeping the current of the simple substance target at 70A, controlling the negative bias voltage at 800V, the temperature at 70 ℃, the coating time at 2min and the film thickness at 100nm as 5: 1.
(6) Turning on a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 10T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 180W as 5:1, keeping the current of the simple substance target at 70A, controlling the negative bias voltage at-600V, controlling the temperature at 70 ℃, controlling the coating time at 2min, and controlling the thickness of the film layer at 100 nm.
(7) Turning on a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 10T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 180W, keeping the current of the simple substance target at 70A, controlling the negative bias voltage at-200V, the temperature at 70 ℃, the coating time at 2min and the film thickness at 100nm as 5: 1.
(8) Mixing Al2O3Heating the substrate for 1.5h, raising the temperature to 700 ℃, and promoting mutual diffusion between Ni and Al.
(9) Turning on a Cu target power supply, and adjusting the gas ratio Ar to N2The working pressure is controlled to be 4.0Pa, the current of the Cu simple substance target is kept at 80A, the negative bias is controlled to be-250V, the temperature is 100 ℃,and depositing a Cu film layer, wherein the film coating time is 60min, and the film layer thickness is 2 mu m.
(10) And after the deposition is finished, closing the nitrogen and the argon, closing the power supply, naturally cooling the temperature in the vacuum cavity, taking out the sample, and finishing the film coating.
The sample prepared by the technology of the embodiment forms a copper film layer with the thickness of 2.0 mu m at most and the resistivity of copper reaches 2.02 multiplied by 10-8Omega m, has good conductivity.
Example 2
In Al2O3The method for plating the nano-copper film on the surface of the ceramic substrate by magnetron sputtering comprises the following steps: (1) sample treatment: mixing Al2O3Ultrasonically cleaning the ceramic matrix in acetone for 10 minutes, ultrasonically cleaning the ceramic matrix with ethanol for 2 times, and taking out and drying the ceramic matrix;
(2) preparing equipment: adopting a magnetron sputtering film plating machine, selecting 3 Cu, Al and Ni elementary substance targets with the purity of 99.99 percent, and adopting Ar gas and N with the purity of 99.99 percent as working gas2And (4) qi.
(3) Putting the sample treated in the step (1) into a furnace, and pumping the air pressure in a vacuum chamber to 3 multiplied by 10-3Pa, filling sputtering gas argon, performing ion bombardment for 10min, wherein the flow of the argon is 10sccm, the sputtering pressure is 0.7Pa, the input power of a plasma source is 200W, starting auxiliary heating, and heating to 350 ℃.
(4) Depositing an Al transition layer: opening a magnetron sputtering Al target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 5T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 60W (5: 1), keeping the current of the simple substance target at 50A, controlling the negative bias voltage at-800V, controlling the coating time to be 0.5min, and controlling the thickness of the film layer to be 10 nm.
(5) Depositing a Ni transition layer: opening a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 5T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 160W, keeping the current of the simple substance target at 60A, controlling the negative bias voltage at-700V, the temperature at 60 ℃, the coating time at 1min and the thickness of the film layer at 25nm as 3: 1.
(6) Opening a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 5T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 160W, keeping the current of the simple substance target at 60A, controlling the negative bias at-500V, the temperature at 60 ℃, the coating time at 1min and the thickness of the film layer at 25nm, wherein the ratio of the sputtering power to the sputtering power is 3: 1.
(7) Opening a magnetron sputtering Ni target power supply, applying a strong magnetic field, controlling the magnetic field intensity to be 5T, and adjusting the gas ratio Ar to N2Adjusting the sputtering power to 160W, keeping the current of the simple substance target at 60A, controlling the negative bias voltage at-100V, the temperature at 60 ℃, the coating time at 1min and the thickness of the film layer at 25nm as 3: 1.
(8) Mixing Al2O3Heating the substrate for 1h, raising the temperature to 650 ℃, and promoting mutual diffusion between Ni and Al.
(9) Turning on a Cu target power supply, and adjusting the gas ratio Ar to N2The working pressure is controlled to be 3.0Pa, the current of the Cu simple substance target is kept to be 65A, the negative bias is controlled to be-200V, the temperature is 80 ℃, the Cu film layer is deposited for 40min, and the film layer thickness is 1.5 mu m.
(10) And after the deposition is finished, closing the nitrogen and the argon, closing the power supply, naturally cooling the temperature in the vacuum cavity, taking out the sample, and finishing the film coating.
The sample prepared by the technique of the embodiment forms a film layer with the thickness of 1.5 μm and has good film-substrate bonding force of 30N.
The above embodiments describe the technical solutions of the present invention in detail. It will be clear that the invention is not limited to the described embodiments. Based on the embodiments of the present invention, those skilled in the art can make various changes, but any changes equivalent or similar to the present invention are within the protection scope of the present invention.
Claims (10)
1. In Al2O3The method for plating the nano-scale copper film on the surface of the ceramic matrix by magnetron sputtering is characterized by comprising the following steps of:
1) pre-treating a substrate: mixing Al2O3Cleaning and drying the ceramic substrate;
2) preparation of equipment and materials: adopting a magnetron sputtering coating machine, selecting 3 Cu, Al and Ni elementary substance targets with the purity of 99.99 percent, and taking working gas as inert gas;
3) putting the substrate pretreated in the step 1) into the film coating machine prepared in the step 2), and pumping the air pressure in a vacuum chamber to 3 x 10-3Pa, filling working gas, performing ion bombardment for 10min, and starting auxiliary heating;
4) depositing an Al transition layer: opening a magnetron sputtering Al target power supply, applying a strong magnetic field to carry out film coating, wherein the magnetic field intensity is 0-10T, and adjusting the working gas ratio Ar to N2Regulating the sputtering power to 50W-100W, keeping the simple substance target current at 50-70A, and controlling the negative bias voltage at-800V to-850V;
5) depositing a Ni transition layer: opening a magnetron sputtering Ni target power supply, applying a strong magnetic field to carry out film coating, wherein the magnetic field intensity is 0-10T, and adjusting the working gas ratio Ar to N2Adjusting the sputtering power to 150W-180W, keeping the elementary substance target current at 60-70A, controlling the negative bias at-700 and 800V, and controlling the temperature at 50-70 ℃;
6) opening a magnetron sputtering Ni target power supply, applying a strong magnetic field for coating, wherein the magnetic field intensity is 0-10T, and adjusting the working gas ratio Ar: n is a radical of2Adjusting the sputtering power to 150-180W, keeping the current of the simple substance target at 60-70A, controlling the negative bias at-500-600V and the temperature at 50-70 ℃;
7) opening a magnetron sputtering Ni target power supply, applying a strong magnetic field for film plating, wherein the magnetic field intensity is 5-10T, and adjusting the gas ratio Ar: n is a radical of2Adjusting the sputtering power to 150-180W, keeping the current of the simple substance target at 60-70A, controlling the negative bias at-100-200V and the temperature at 50-70 ℃;
8) heating the whole substance obtained in the step (7) for 1-1.5h to promote mutual diffusion between Ni and Al;
9) turning on a Cu target power supply, and adjusting the ratio of Ar to N of working gas21:1-3:1, controlling the working pressure at 3.0-4.0Pa, keeping the current of the Cu simple substance target at 70-80A, controlling the negative bias at-200 ℃ and 250V, and depositing a Cu film at the temperature of 300 ℃;
10) and after the deposition is finished, closing the nitrogen and the argon, closing a power supply, naturally cooling the temperature in the vacuum chamber, and taking out the product.
2. The method according to claim 1, wherein the ultrasonic cleaning is performed using acetone and ethanol in step 1).
3. The method of claim 1, wherein the working gas of step 2) is Ar gas and N with a purity of 99.99%2And (4) qi.
4. The method as claimed in claim 1, wherein the flow rate of the working gas in step 3) is 5-20sccm, the gas pressure is 0.5-0.9Pa, the input power of the plasma source is 200-1000W, and the heating temperature is raised to 350 ℃.
5. The method according to claim 1, wherein the coating time in step 4) is 0.5min, and the thickness of the coating layer is 10-15 nm.
6. The method according to claim 1, wherein the coating time in step 5) is 1min to 2min, and the thickness of the coating is 25nm to 100 nm.
7. The method according to claim 1, wherein the coating time in step 6) is 1min to 2min, and the thickness of the coating is 20 nm to 30 nm.
8. The method according to claim 1, wherein the coating time in step 7) is 1min to 2min, and the thickness of the coating is 20 nm to 30 nm.
9. The method as claimed in claim 1, wherein the heating in step 8) is carried out to a temperature of 650-700 ℃.
10. The method as claimed in claim 1, wherein the deposition time in step 9) is 20-60min and the film thickness is 1-2 μm.
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| CN113278934A (en) * | 2021-04-26 | 2021-08-20 | 深圳市新邦薄膜科技有限公司 | Method for continuously depositing copper plating film by vacuum sputtering |
| CN114702335A (en) * | 2022-04-22 | 2022-07-05 | 湖南省新化县鑫星电子陶瓷有限责任公司 | Metallization process of alumina ceramic |
| CN115410925B (en) * | 2022-09-22 | 2023-08-11 | 江苏富乐华半导体科技股份有限公司 | Method for improving heat-resistant cycle reliability of aluminum nitride coated aluminum packaging lining plate |
| CN116813388A (en) * | 2023-07-07 | 2023-09-29 | 四川富乐华半导体科技有限公司 | Sintering jig manufactured by ceramic metallization method |
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| CN114702335A (en) * | 2022-04-22 | 2022-07-05 | 湖南省新化县鑫星电子陶瓷有限责任公司 | Metallization process of alumina ceramic |
| CN115410925B (en) * | 2022-09-22 | 2023-08-11 | 江苏富乐华半导体科技股份有限公司 | Method for improving heat-resistant cycle reliability of aluminum nitride coated aluminum packaging lining plate |
| CN116813388A (en) * | 2023-07-07 | 2023-09-29 | 四川富乐华半导体科技有限公司 | Sintering jig manufactured by ceramic metallization method |
| CN116813388B (en) * | 2023-07-07 | 2023-12-26 | 四川富乐华半导体科技有限公司 | Sintering jig manufactured by ceramic metallization method |
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