CN112391609B - Multi-temperature-zone chemical vapor deposition device for organic semiconductor crystal - Google Patents

Multi-temperature-zone chemical vapor deposition device for organic semiconductor crystal Download PDF

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CN112391609B
CN112391609B CN202011281315.XA CN202011281315A CN112391609B CN 112391609 B CN112391609 B CN 112391609B CN 202011281315 A CN202011281315 A CN 202011281315A CN 112391609 B CN112391609 B CN 112391609B
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wall
fixed
bolts
plate
reaction
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CN112391609A (en
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黎志欣
徐永胜
王爽
李欢
李阳
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Linton Kayex Technology Co Ltd
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Linton Kayex Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to the technical field of vapor deposition, in particular to a multi-temperature-zone chemical vapor deposition device for an organic semiconductor crystal, and provides a scheme for solving the problem that the existing multi-temperature-zone chemical vapor deposition device for the organic semiconductor crystal cannot allow two reaction gases to fully react, namely cannot allow the two gases to fully contact in a reaction cylinder, so that the production quality of materials is poor. The pressure reducing box can form fast flowing air flow in the pressure reducing box through the air dispersing plate and the air dispersing pipe, and a low-pressure area can be formed near the air flow, so that two gases in reaction can move towards the vicinity of the substrate holder of the low-pressure area, and the deposition capacity of the gases can be enhanced.

Description

Multi-temperature-zone chemical vapor deposition device for organic semiconductor crystal
Technical Field
The invention relates to the technical field of vapor deposition, in particular to a multi-temperature-zone chemical vapor deposition device for an organic semiconductor crystal.
Background
Chemical Vapor Deposition (CVD), which refers to a process in which chemical gases or vapors react to synthesize coatings or nanomaterials on the surface of a substrate, is the most widely used technique in the semiconductor industry for depositing a variety of materials, including a wide range of insulating materials, most metallic materials and metal alloy materials. Theoretically, it is simple: two or more gaseous starting materials are introduced into a reaction chamber and then chemically react with each other to form a new material that is deposited on the wafer surface. A good example is the deposition of a silicon nitride film (Si 3N 4) which is formed by the reaction of silane and nitrogen.
The existing multi-temperature-zone chemical vapor deposition device for the organic semiconductor crystal has the following defects: although the current vapor deposition technology is relatively perfect, the two reaction gases cannot be fully reacted, that is, the two gases cannot be fully contacted in the reaction cylinder, so that the production quality of the material is poor.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a multi-temperature-zone chemical vapor deposition device for an organic semiconductor crystal.
The invention provides a multi-temperature-zone chemical vapor deposition device for organic semiconductor crystals, which comprises a workbench, wherein an installation plate is fixed on the outer wall of the top of the workbench through bolts, a first fixing hole and a second fixing hole are respectively formed in the outer wall of the top and the bottom of the outer wall of one side of the installation plate, a first air inlet pipe is inserted into the inner wall of the first fixing hole, a second air inlet pipe is inserted into the inner wall of the second fixing hole, a reaction cylinder is fixed on the outer wall of one side of the installation plate through bolts, an installation ring is fixed on the inner wall of the reaction cylinder through bolts, fixing rods distributed at equal intervals are fixed on the inner wall of the installation ring through bolts, and a connecting plate is fixed at one end of each fixing rod through a bolt, the outer wall of one side of the connecting plate is connected with a rotating rod through a bearing, the outer wall of the rotating rod is respectively fixed with an accelerating plate and an exciting plate which are distributed equidistantly through bolts, the inner wall of the reaction barrel is fixed with a lining frame through bolts, the outer wall of the top part of the lining frame is provided with vent holes which are distributed equidistantly, and the outer wall of the reaction barrel is fixed with a decompression box, the air diffuser is characterized in that an air suction pump is fixed on the outer wall of one side of the pressure reducing box through a bolt, an air suction hopper is sleeved at the input end of the air suction pump, an air diffusing plate is fixed on the inner wall of one side of the pressure reducing box through a bolt, inserting holes distributed at equal intervals are formed in the outer wall of one side of the air diffusing plate, air diffusing pipes distributed at equal intervals are inserted into the inner wall of the inserting holes, and the air diffusing pipes and the air vents are matched for use.
Preferably, the top outer wall of the substrate holder is fixed with equidistantly distributed substrates through bolts, and the substrates and the flaring plates are matched for use.
Preferably, the heating box is fixed on the outer wall of the top of the reaction cylinder through bolts, the outer wall of the bottom of the heating box is communicated with the inside of the reaction cylinder, and the air outlet plate is fixed on the outer wall of one side of the decompression box through bolts.
Preferably, the outer wall of the bottom of the reaction cylinder is provided with a mounting hole, the inner wall of the mounting hole is fixed with a connecting pipe through a bolt, and one end of the connecting pipe is fixed with a recovery box through a bolt.
Preferably, a chute is formed in the outer wall of one side of the recovery box, a sliding rail is fixed to the inner wall of the chute through a bolt, and a recovery drawer is connected to the inner wall of the sliding rail in a sliding mode.
Preferably, both sides of the outer wall of the reaction barrel are respectively provided with a fixing ring through bolts, the outer wall of the fixing ring is provided with a mounting rod through bolts, and one end of the mounting rod is fixed on the outer wall of the top of the workbench through bolts.
Preferably, the accelerating plate is provided with an S shape, and the accelerating plate can form a vortex accelerating effect on the gas.
Preferably, the outer wall of one side of the reaction barrel is fixed with a filter box through a bolt, the outer wall of the top of the filter box is provided with exhaust holes distributed at equal intervals, and the inner walls of the exhaust holes are inserted with exhaust barrels.
The beneficial effects of the invention are as follows:
1. the multi-temperature zone chemical vapor deposition device of the organic semiconductor crystal is provided with a first air inlet pipe, a second air inlet pipe, a rotating rod, an exciting plate, a decompression box, a substrate holder, a vent hole, an aspirator pump, a gas diffusing plate and a gas diffusing pipe, wherein two gases are respectively input into a reaction barrel through the first air inlet pipe and the second air inlet pipe, the gas entering from the first air inlet pipe can drive the exciting plate to rotate, the second air inlet pipe enters the gas to be deposited near the top of the substrate holder, at the moment, the other gas near the exciting plate can be excited to the top of the substrate holder while the exciting plate rotates, simultaneously, the mixing speed of the two gases can be accelerated, the reaction between the two gases is accelerated, the aspirator pump sucks the air into the decompression box, the decompression box can form a fast flowing gas flow inside the decompression box through the gas diffusing plate and the gas diffusing pipe, at the moment, a low-pressure area can be formed near the gas flow, therefore, the two gases in the reaction move towards the substrate holder near the low-pressure area, the deposition capability of the gases can be enhanced, the structure is reasonable, and the practicability is strong.
2. This organic semiconductor crystal' S multi-temperature-zone chemical vapor deposition device, through being provided with accelerating plate and heating cabinet, can heat near the air of reaction cylinder top inner wall through the heating cabinet, the near air of top inner wall of reaction cylinder can expand after the heating, thereby can push away near the substrate holder with the gas that first intake pipe got into, the promotion of temperature helps the reaction between the gas in addition, gaseous deposit effect has been promoted, it can be with the waste gas discharge after the reaction in the reaction cylinder outside the device to drive accelerating plate rotation through the bull stick, the board sets up the S-shaped flow that can accelerate gas with higher speed with the accelerating plate.
3. This organic semiconductor crystal's multi-temperature-zone chemical vapor deposition device, through being provided with connecting pipe, collection box and recovery drawer, when the gas of first intake pipe and the gas mixing reaction in the second intake pipe, always have some reaction totally inadequately or have the production of some liquid impurity, the waste liquid can enter into the collection box through the connecting pipe this moment, people can carry out centralized processing to the waste liquid through retrieving the drawer.
4. This organic semiconductor crystal's multi-temperature-zone chemical vapor deposition device through being provided with rose box and aiutage, can filter the waste gas that the device got rid of through setting up the rose box in the department of giving vent to anger of reaction cylinder, and the waste gas after the filtration discharges through the aiutage again, has embodied the green theory of device.
The parts of the device not involved are the same as or can be implemented using prior art.
Drawings
Fig. 1 is a schematic view of the overall structure of a multi-temperature-zone chemical vapor deposition apparatus for organic semiconductor crystal according to embodiment 1 of the present invention;
FIG. 2 is a three-dimensional structure diagram of a substrate holder of a multi-temperature-zone chemical vapor deposition apparatus for organic semiconductor crystals according to the present invention;
FIG. 3 is a sectional view of a decompression box of a multi-temperature-zone chemical vapor deposition apparatus for organic semiconductor crystals according to the present invention;
FIG. 4 is a three-dimensional structure diagram of an acceleration plate of a multi-temperature-zone chemical vapor deposition device for organic semiconductor crystals according to the present invention;
fig. 5 is a three-dimensional structure diagram of a multi-temperature-zone chemical vapor deposition apparatus for organic semiconductor crystal according to embodiment 2 of the present invention.
In the figure: 1 mounting plate, 2 first air inlet pipes, 3 second air inlet pipes, 4 getter pumps, 5 working tables, 6 fixing rings, 7 reaction barrels, 8 heating boxes, 9 decompression boxes, 10 substrate holders, 11 recovery boxes, 12 recovery drawers, 13 gas outlet plates, 14 substrates, 15 vent holes, 16 mounting rings, 17 connecting plates, 18 flaring plates, 19 rotating rods, 20 accelerating plates, 21 mounting rods, 22 exhaust barrels, 23 filter boxes, 24 gas diffusion plates, 25 gas diffusion pipes and 26 connecting pipes.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Example 1
Referring to fig. 1-4, a multi-temperature zone chemical vapor deposition apparatus for organic semiconductor crystals, comprising a worktable 5, a mounting plate 1 fixed to the top outer wall of the worktable 5 by bolts, a first fixing hole and a second fixing hole respectively opened at the top outer wall and the bottom of the outer wall at one side of the mounting plate 1, a first air inlet pipe 2 inserted into the inner wall of the first fixing hole, a second air inlet pipe 3 inserted into the inner wall of the second fixing hole, a reaction cylinder 7 fixed to the outer wall at one side of the mounting plate 1 by bolts, a mounting ring 16 fixed to the inner wall of the reaction cylinder 7 by bolts, fixing rods distributed at equal intervals fixed to the inner wall of the mounting ring 16 by bolts, a connecting plate 17 fixed to one end of the fixing rods by bolts, a rotating rod 19 connected to the outer wall at one side of the connecting plate 17 by bearings, an accelerating plate 20 and an exciting plate 18 distributed at equal intervals fixed to the outer wall of the rotating rod 19 by bolts, a lining bottom frame 10 fixed to the inner wall of the reaction cylinder 7 by bolts, the top outer wall of the substrate holder 10 is provided with vent holes 15 which are distributed equidistantly, the outer wall of the reaction barrel 7 is fixed with a decompression box 9 through bolts, the outer wall of one side of the decompression box 9 is fixed with an inhalation pump 4 through bolts, the input end of the inhalation pump 4 is sleeved with an inhalation bucket, the inner wall of one side of the decompression box 9 is fixed with a gas diffusion plate 24 through bolts, the outer wall of one side of the gas diffusion plate 24 is provided with splicing holes which are distributed equidistantly, the inner wall of the splicing holes is spliced with gas diffusion pipes 25 which are distributed equidistantly, the gas diffusion pipes 25 and the vent holes 15 are matched for use, two gases are respectively input into the reaction barrel 7 through a first gas inlet pipe 2 and a second gas inlet pipe 3, the gas which enters the first gas inlet pipe 2 can drive the flaring plate 18 to rotate, the second gas inlet pipe 3 enters the gas which can be deposited near the top of the substrate holder 10, at the moment, the flaring plate 18 rotates and simultaneously can flare the other gas near the flaring plate 18 to the substrate holder 10 The top can also accelerate the mixing speed of the two gases at the same time, accelerate the reaction between the two gases, the air suction pump 4 sucks the air into the decompression box 9, the decompression box 9 can form fast flowing air flow inside the decompression box 9 through the air diffusion plate 24 and the air diffusion pipe 25, a low-pressure area can be formed nearby the air flow, therefore, the two gases in the reaction can move towards the nearby substrate holder 10 of the low-pressure area, and the deposition capacity of the gases can be enhanced.
In the present invention, the top outer wall of the substrate holder 10 is fixed with the substrates 14 distributed equidistantly by bolts, and the substrates 14 and the flaring plates 18 are used in cooperation, the flaring plates 18 can flare the gas after reaction onto the substrates 14, which is convenient for the deposition of the gas.
In the invention, the heating box 8 is fixed on the outer wall of the top of the reaction cylinder 7 through bolts, the outer wall of the bottom of the heating box 8 is communicated with the inside of the reaction cylinder 7, the air outlet plate 13 is fixed on the outer wall of one side of the decompression box 9 through bolts, the air near the inner wall of the top of the reaction cylinder 7 can be heated through the heating box 8, the heated air near the inner wall of the top of the reaction cylinder 7 can be expanded, and thus the air entering from the first air inlet pipe 2 can be pushed to the vicinity of the substrate holder 10.
In the invention, the outer wall of the bottom of the reaction cylinder 7 is provided with a mounting hole, the inner wall of the mounting hole is fixed with a connecting pipe 26 through a bolt, and one end of the connecting pipe 26 is fixed with the recovery box 11 through a bolt.
In the invention, a chute is formed in the outer wall of one side of the recovery box 11, a slide rail is fixed on the inner wall of the chute through a bolt, and the inner wall of the slide rail is connected with the recovery drawer 12 in a sliding manner, when the gas in the first gas inlet pipe 2 and the gas in the second gas inlet pipe 3 are mixed and reacted, a part of reaction is always incomplete or a part of liquid impurities are always generated, at the moment, the waste liquid can enter the recovery box 11 through the connecting pipe 26, and people can perform centralized treatment on the waste liquid through the recovery drawer 12.
In the invention, the two sides of the outer wall of the reaction cylinder 7 are both fixed with fixing rings 6 through bolts, the outer wall of the fixing ring 6 is fixed with mounting rods 21 through bolts, and one end of each mounting rod 21 is fixed on the outer wall of the top of the workbench 5 through bolts.
In the invention, the accelerating plate 20 is S-shaped, the accelerating plate 20 can generate a vortex accelerating effect on the gas, the exhaust gas after reaction in the reaction cylinder 7 can be discharged out of the device by driving the accelerating plate 20 to rotate through the rotating rod 19, and the accelerating plate 20 is S-shaped to accelerate the flow of the gas.
When in use, the two gases are respectively input into the reaction cylinder 7 through the first gas inlet pipe 2 and the second gas inlet pipe 3, the gas introduced through the first gas inlet tube 2 can drive the radial plate 18 to rotate, the second gas inlet tube 3 is introduced into the vicinity of the top of the substrate holder 10 where the gas is to be deposited, at which time the radial plate 18 rotates while another gas in the vicinity of the radial plate 18 can be radial-casted to the top of the substrate holder 10, simultaneously, the mixing speed of the two gases can be accelerated, the reaction between the two gases is accelerated, the air is sucked into the decompression box 9 by the air suction pump 4, the pressure reducing chamber 9 can form a fast flowing gas flow inside the pressure reducing chamber 9 through the gas diffusing plate 24 and the gas diffusing pipe 25, and a low pressure region is formed in the vicinity of the gas flow, so that the two gases in the reaction move toward the vicinity of the substrate holder 10 in the low pressure region, further, the deposition capability of the gas can be enhanced, the air near the top inner wall of the reaction cylinder 7 can be heated by the heating box 8, the air near the top inner wall of the reaction cylinder 7 can be expanded after heating, so that the gas introduced from the first gas inlet pipe 2 can be pushed to the vicinity of the substrate holder 10, and in addition, the increase in temperature contributes to the reaction between the gases, the deposition effect of the gases is improved, the waste gas after reaction in the reaction cylinder 7 can be discharged out of the device by driving the accelerating plate 20 to rotate through the rotating rod 19, the accelerating plate 20 is arranged into an S shape to accelerate the flow of the gas, when the gas in the first gas inlet pipe 2 and the gas in the second gas inlet pipe 3 are mixed and reacted, a part of reaction is always incomplete or a part of liquid impurities are generated, at the moment, the waste liquid can enter the recovery box 11 through the connecting pipe 26, and people can perform centralized treatment on the waste liquid through the recovery drawer 12.
Example 2
Referring to fig. 5, in the embodiment, compared with embodiment 1, the multi-temperature-zone chemical vapor deposition device further comprises a filter box 23 fixed to the outer wall of one side of the reaction cylinder 7 through bolts, the outer wall of the top of the filter box 23 is provided with exhaust holes distributed at equal intervals, the inner wall of each exhaust hole is connected with an exhaust cylinder 22 in an inserting mode, exhaust gas discharged by the device can be filtered by arranging the filter box 23 at the gas outlet of the reaction cylinder 7, and the filtered exhaust gas is discharged through the exhaust cylinder 22, so that the green environmental protection concept of the device is reflected.
During the use, set up rose box 23 through the department of giving vent to anger at reaction cylinder 7 and can filter the waste gas that the device was got rid of, the waste gas after the filtration discharges through aiutage 22 again, has embodied the green theory of environmental protection of device.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (1)

1. The utility model provides a multi-temperature-zone chemical vapor deposition device of organic semiconductor crystal, includes workstation (5), its characterized in that, the top outer wall of workstation (5) has mounting panel (1) through the bolt fastening, the top outer wall and the bottom of mounting panel (1) one side outer wall are opened first fixed orifices and second fixed orifices respectively, and the inner wall of first fixed orifices pegs graft and have first intake pipe (2), the inner wall of second fixed orifices pegs graft and have second intake pipe (3), mounting panel (1) one side outer wall has reaction cylinder (7) through the bolt fastening, the inner wall of reaction cylinder (7) has collar (16) through the bolt fastening, the inner wall of collar (16) has the equidistance dead lever that distributes through the bolt fastening, the one end of dead lever has connecting plate (17) through the bolt fastening, one side outer wall of connecting plate (17) is connected with bull stick (19) through the bearing, the outer wall of bull stick (19) has acceleration board (20) and incite moving plate (18) that the equidistance distributes through the bolt fastening respectively, the inner wall of reaction cylinder (7) has lining (10), the top outer wall of reaction cylinder (10) has the decompression case (9) through the bolt fastening has the roof bolt fastening has the decompression case (9) and has the decompression pump (9), the air suction hopper is sleeved at the input end of the air suction pump (4), an air diffusing plate (24) is fixed on the inner wall of one side of the pressure reduction box (9) through bolts, inserting holes are formed in the outer wall of one side of the air diffusing plate (24) and distributed at equal intervals, air diffusing pipes (25) are inserted into the inner wall of the inserting holes and distributed at equal intervals, and the air diffusing pipes (25) are matched with the air vents (15) for use; the outer wall of the top of the substrate frame (10) is fixed with substrates (14) which are distributed equidistantly through bolts, and the substrates (14) are matched with the flaring plates (18) for use; the heating box (8) is fixed on the outer wall of the top of the reaction cylinder (7) through bolts, the outer wall of the bottom of the heating box (8) is communicated with the interior of the reaction cylinder (7), and the air outlet plate (13) is fixed on the outer wall of one side of the decompression box (9) through bolts; the outer wall of the bottom of the reaction cylinder (7) is provided with a mounting hole, the inner wall of the mounting hole is fixedly provided with a connecting pipe (26) through a bolt, and one end of the connecting pipe (26) is fixedly provided with a recovery box (11) through a bolt; a chute is formed in the outer wall of one side of the recovery box (11), a sliding rail is fixed to the inner wall of the chute through a bolt, and a recovery drawer (12) is connected to the inner wall of the sliding rail in a sliding mode; fixing rings (6) are fixed on two sides of the outer wall of the reaction cylinder (7) through bolts, mounting rods (21) are fixed on the outer wall of the fixing rings (6) through bolts, and one ends of the mounting rods (21) are fixed on the outer wall of the top of the workbench (5) through bolts; the accelerating plate (20) is S-shaped, and the accelerating plate (20) can generate a vortex accelerating effect on the gas; the outer wall of one side of the reaction barrel (7) is fixed with a filter box (23) through a bolt, the outer wall of the top of the filter box (23) is provided with exhaust holes distributed at equal intervals, and the inner walls of the exhaust holes are spliced with exhaust barrels (22).
CN202011281315.XA 2020-11-16 2020-11-16 Multi-temperature-zone chemical vapor deposition device for organic semiconductor crystal Active CN112391609B (en)

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CN105731544A (en) * 2016-01-26 2016-07-06 信阳师范学院 Preparation method of uniformly-doped one-dimensional diluted magnetic semiconductor material
CN209836302U (en) * 2019-04-12 2019-12-24 武汉大学 Microwave radio frequency plasma chemical vapor deposition device
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