CN214635144U - Tail gas treatment device and film deposition system - Google Patents
Tail gas treatment device and film deposition system Download PDFInfo
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- CN214635144U CN214635144U CN202120283365.5U CN202120283365U CN214635144U CN 214635144 U CN214635144 U CN 214635144U CN 202120283365 U CN202120283365 U CN 202120283365U CN 214635144 U CN214635144 U CN 214635144U
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Abstract
The application discloses tail gas processing apparatus and membrane deposition system, tail gas processing apparatus includes: a first gas passage and a second gas passage connected to each other; the first gas passage is provided with a heating device; a filtering device is arranged in the second gas passage, and the second gas passage is provided with a reaction gas inlet; at least part of the filter means is located in front of the reactant gas inlet in the direction of flow of the off-gas in the second gas passageway. Tail gas reacts with the reaction gas at least in the second gas access and generates the particulate matter, and the particulate matter can be intercepted by filter equipment, can avoid tail gas not thoroughly decompose before the aspiration pump to lead to decomposing to generate a large amount of particulate matters in the aspiration pump or lead to the dead problem of aspiration pump card to take place in the aspiration pump of a large amount of particulate matters that generate before the aspiration pump.
Description
Technical Field
The utility model relates to a membrane deposition technology field, concretely relates to tail gas processing apparatus and membrane deposition system.
Background
For the mainstream PERC (Passivated Emitter and Rear Cell) battery in the current market, it is important to deposit a layer of aluminum oxide film with passivation effect on the Rear surface of a silicon wafer, and the quality of the aluminum oxide film is directly related to the efficiency improvement of the battery plate. The Deposition equipment for the back side aluminum oxide film currently has PECVD (Plasma Enhanced Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) technologies, which are easy to introduce impurities into the film Layer during the Deposition of aluminum oxide, and the aluminum oxide film deposited by the technology has poor compactness and low source utilization rate, and on the contrary, the ALD technology can deposit the aluminum oxide film which is thinner, has better quality and better passivation effect, so the ALD technology is gradually applied to the photovoltaic industry in recent years, however, the ALD technique has a slow deposition rate, a film layer deposited in one cycle has a thickness of about 0.1nm, to improve throughput, which typically makes ALD chambers large, a single deposition process can deposit aluminum oxide films on thousands of silicon wafers, however, this results in the need to feed more sources [ TMA (Trimethylaluminium) and H.2O or ozone), thereby leading to the tail gas volume great, and required vacuum pump is bigger, often leads to the vacuum pump card to die because of tail gas (mainly referring to TMA) is not fully decomposed before the vacuum pump in the process of continuous production, makes whole maintenance cycle short, and the maintenance cost of vacuum pump is high, seriously influences workshop output. The reason why the vacuum pump is locked is that a large amount of TMA in the tail gas is not completely decomposed before the pump, so that a large amount of alumina particulate matters are decomposed and generated in the pump or the alumina particulate matters generated before the pump are pumped into the pump, so that the pump is locked.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide an exhaust gas treatment device and a film deposition system, so as to solve the problem that the exhaust gas exhausted from the film deposition reaction chamber easily causes the vacuum pump to be locked in the prior art.
In a first aspect, the present invention provides an exhaust gas treatment device, including:
a first gas passage and a second gas passage connected to each other;
the first gas passage is provided with a heating device;
a filtering device is arranged in the second gas passage, and the second gas passage is provided with a reaction gas inlet; at least part of the filter means is located in front of the reactant gas inlet in the direction of flow of the off-gas in the second gas passageway.
In this way, the exhaust gas outlet of the first gas passage is connected to the exhaust gas inlet of the second gas passage, and the reaction gas inlet is close to the exhaust gas outlet of the first gas passage.
As an implementation, the filtering device comprises at least two filtering nets arranged side by side along the direction of the exhaust gas flow in the second gas passage.
As an implementation, the filter screen includes a conical filter screen, and a conical tip of the conical filter screen faces a direction of the exhaust gas flow in the second gas passage.
As an implementation manner, the filter screen further comprises a plane filter screen, and the plane filter screen is at least arranged between the adjacent conical filter screens.
As an implementation, the planar filter screen is at least arranged at the bottom of the conical filter screen.
As an implementation manner, the planar filter screen is arranged at the tip of the conical filter screen, which is close to the tail gas inlet of the second gas passage and is located at the head.
As an implementation manner, the exhaust gas purifier further comprises a filter screen mounting rack, and the filter screens are sequentially fixed on the filter screen mounting rack along the flowing direction of the exhaust gas in the second gas passage.
As an implementation manner, each filter screen comprises a sheet-shaped main body, filter holes are distributed on the sheet-shaped main body, and the pore diameter of each filter hole is the same or different.
In an embodiment, the heating device is arranged on the inner side and/or the outer side of the first gas channel.
In a second aspect, the present invention provides a film deposition system, which comprises a film deposition reaction chamber, an air pump and the above-mentioned tail gas treatment device, wherein the air inlet of the first gas passage is communicated with the tail gas outlet of the film deposition reaction chamber, the air pump is communicated with the air outlet of the second gas passage, and the reaction gas inlet is connected to a reaction gas supply device; alternatively, the first and second electrodes may be,
and a tail gas inlet of the second gas passage is communicated with a tail gas outlet of the film deposition reaction cavity, the air pump is communicated with a tail gas outlet of the first gas passage, and the reaction gas inlet is connected with a reaction gas supply device.
The above-mentioned scheme that this application provided, at the during operation, can directly decompose after heating through heating device in first gas passage in the material that meets heat decomposable in the tail gas, meet the material that reaction gas can generate the particulate matter in the tail gas, react with reaction gas in the second gas passage and generate the particulate matter, the particulate matter can be intercepted by filter equipment, tail gas reentrant aspiration pump after handling through first gas passage and second gas passage, can avoid tail gas not thoroughly decompose before the aspiration pump and lead to decomposing in the aspiration pump to generate a large amount of particulate matters or lead to the dead problem emergence of aspiration pump card in the aspiration pump is taken out to a large amount of particulate matters that generate before the aspiration pump.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an exhaust gas treatment device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an exhaust gas treatment device according to another embodiment of the present invention;
fig. 3 is a front view of a filtering apparatus according to an embodiment of the present invention;
FIG. 4 is a top view of FIG. 3;
FIG. 5 is a right side view of FIG. 3;
FIG. 6 is an enlarged view of portion A of FIG. 4;
FIG. 7 is an enlarged view of the portion B of FIG. 4;
fig. 8 is a schematic structural diagram of a film deposition system according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a film deposition system according to another embodiment of the present invention.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As shown in fig. 1, the embodiment of the present invention provides an exhaust gas treatment device 1, including:
a first gas passage 6 and a second gas passage 7 connected to each other; the shape and size of the first gas passage 6 and the second gas passage 7 may be determined according to actual needs, and may be, for example, a pipe structure, a cavity structure, or the like, which is not limited herein.
The first gas passage 6 is provided with a heating device 5; the heating device 5 may directly or indirectly heat the medium flowing in the first gas passage 6 through the first gas passage 6, and in this example, the medium flowing in the first gas passage 6 may be an off-gas generated in the film deposition process. Such as but not limited to off-gas generated after film deposition by ALD processes, including TMA and the like. When the heating device 5 directly heats the medium flowing in the first gas passage 6, the heating device 5 is disposed in the first gas passage 6; when the heating device 5 indirectly heats the medium flowing in the first gas passage 6, the heating device 5 is arranged outside the first gas passage 6, the heating device 5 heats the first gas passage 6, and the first gas passage 6 radiates heat to the medium flowing in the first gas passage 6 to indirectly heat the medium. The problem of heating is determined by the composition of the exhaust gas, for example, the heating temperature in the first gas passage 6 may be above 300 ℃ to decompose at least part of the species in the exhaust gas.
A filtering device 9 is arranged in the second gas passage 7, and the second gas passage 7 is provided with a reaction gas input port 4, through which a required reaction gas, such as but not limited to ozone and the like, can be input into the second gas passage 7 through the reaction gas input port 4, so that the reaction gas reacts with the tail gas flowing in the second gas passage 7, and certain substances in the tail gas are decomposed to generate particles; at least a portion of the filter device 9 is located in front of the reaction gas input port 4 in the direction of the flow of the off-gas in the second gas passage 7 (i.e. at least a portion of the filter device 9 is located on the left side of the reaction gas input port 4 in fig. 1, in this example, the entire filter device 9 is located on the left side of the reaction gas input port 4), so that the reaction gas and the off-gas are reacted and then filtered by the filter device 9. The reaction gas inlet 4 is provided in the second gas passage 7 but not in the first gas passage 6, and prevents the reaction gas from being heated and decomposed by itself after entering the first gas passage 6, and thus cannot be sufficiently brought into contact with the exhaust gas to decompose the exhaust gas.
It should be noted that, in this document, the direction along the exhaust gas flow is the front, and the direction away from the exhaust gas flow is the rear; for example, the right side in fig. 1 is the front, and the left side is the rear.
The material that can be decomposed in the tail gas after being heated through heating device in first gas access 6 can directly decompose, meet the material that reaction gas can generate the particulate matter in the tail gas, react with reaction gas in second gas access 7 and generate the particulate matter, the particulate matter can be intercepted by filter equipment, tail gas reentrant aspiration pump after handling through first gas access 6 and second gas access 7, can avoid tail gas not thoroughly decompose before the aspiration pump and lead to decomposing in the aspiration pump and generate a large amount of particulate matters or lead to the dead problem emergence of aspiration pump card in the aspiration pump is taken out to a large amount of particulate matters that generate before the aspiration pump.
The first gas passage 6 and the second gas passage 7 connected to each other may be, as shown in fig. 1, a tail gas outlet of the first gas passage 6 is connected to a gas inlet of the second gas passage 7, in which case, the tail gas flows through the first gas passage 6 first and then flows through the second gas passage 7; it is of course also possible that the off-gas outlet of the second gas channel 7 is connected to the gas inlet of the first gas channel 6, as shown in fig. 2, in which case the off-gas flows through the second gas channel 7 before the first gas channel 6.
It is generally preferred to adopt the structure shown in fig. 1 in which the off-gas outlet of the first gas passage 6 is connected to the gas inlet of the second gas passage 7, and in this structure, the reactant gas inlet is located close to the off-gas outlet of the first gas passage 6. During operation, the exhaust gas inlet of the first gas passage 6 is communicated with the exhaust gas outlet of the film deposition reaction chamber 12, the exhaust gas flowing through the first gas passage 6 is heated by the heating device 5, so that at least part of substances in the exhaust gas are decomposed to generate particles, in addition, after the undecomposed substances enter the second gas passage 7, the undecomposed substances are further reacted with the reaction gas input by the reaction gas input port 4 to be decomposed again to generate particles, and the generated particles are intercepted by the filtering device 9, so that the gas exhausted from the second gas passage 7 is relatively pure, thereby avoiding the problem that the exhaust gas is not completely decomposed before the air pump 13 to generate a large amount of particles in the air pump 13 or the large amount of particles generated before the air pump 13 is pumped into the air pump 13 to cause the air pump 13 to be stuck.
As a practical matter, the filtering device 9 includes at least two filtering nets arranged side by side along the flowing direction of the exhaust gas in the second gas passage 7, and the filtering rate can be improved by arranging more than two filtering nets, so as to reduce the particulate matters entering the subsequent air suction pump 13 as much as possible.
As an implementation, referring also to fig. 3-5, the screen comprises a conical screen 2, and the conical tip of the conical screen 2 faces the direction of the exhaust gas flow in the second gas passage 7. For example, in fig. 1, the direction of the exhaust gas flowing in the second gas passage 7 is from right to left, and the direction facing the exhaust gas flowing in the second gas passage 7 is from left to right. The cone tip of the conical filter screen 2 faces the flowing direction of the tail gas in the second gas passage 7, so that the flowing gas has certain blowing effect on the particles intercepted by the conical filter screen 2, and the particles can be prevented from being attached to the conical filter screen 2 to cause the blockage of the conical filter screen 2. In addition, adopt toper filter screen 2 can improve filter area on unit length, under certain filtration rate requirement, can reduce the requirement to 7 length of second gas access, and then reduce cost and the demand that the space occupy.
As an implementation manner, in order to further improve the filtering effect, the filter screen further comprises a plane filter screen 3, and the plane filter screen 3 is at least arranged between the adjacent conical filter screens 2.
As an implementation, in particular, the planar screen 3 is arranged at least at the bottom of the conical screen 2.
As a practical matter, the planar screen 3 is disposed at the tip of the conical screen 2 near the tail gas inlet of the second gas passage 7 and at the head. That is, in this example, the gas to be filtered first passes through a flat screen 3 and then through a conical screen 2, in this order until all screens have been passed, in order to achieve the desired filtering effect.
As an implementation manner, in order to facilitate installation and replacement of the filter screens, the exhaust gas purifier further comprises a filter screen mounting rack 8, and each filter screen is sequentially fixed on the filter screen mounting rack 8 along the flowing direction of the exhaust gas in the second gas passage 7. When the installation or replacement is performed, the filter device 9 is inserted into the second gas passage 7 or pulled out from the second gas passage 7 directly through the screen mounting bracket 8.
As an implementation manner, referring to fig. 6 and 7, each filter screen includes a sheet-shaped main body 10, filter holes 11 are arranged on the sheet-shaped main body 10, and the pore diameters of the filter holes 11 are the same or different. The filtering holes 11 filter out particulate matters and moisture in the gas flowing through the second gas passage 7. The filter holes 11 are formed in the sheet-like body 10 by, for example, but not limited to, etching or laser drilling. After the sheet-shaped main body 10 is formed into a hole, it may be directly cut into a desired shape as the flat screen 3, or may be bent into a tapered screen 2 after being cut into a desired shape.
As an implementation, the heating device 5 is arranged on the inner side and/or the outer side of the first gas channel 6. For example, but not limiting of, the heating device 5 may be an electric heating tube, which may be wound on the outer side of the first gas passage 6, may be located on the inner side of the first gas passage 6, or may be provided on both the inner side of the first gas passage 6 and the outer side of the first gas passage 6.
In a second aspect, as shown in fig. 8, the utility model provides a film deposition system, including film deposition reaction chamber 12, aspiration pump 13 and the tail gas processing apparatus 1 of the above-mentioned embodiment, the tail gas import of first gas passage 6 with the tail gas discharge mouth intercommunication of film deposition reaction chamber 12, aspiration pump 13 with the tail gas export intercommunication of second gas passage 7, reaction gas air feeder is connected to reaction gas input port 4.
The film deposition reaction chamber 12 is, for example, but not limited to, an ALD deposition process reaction chamber.
The suction pump 13 is, for example, but not limited to, a vacuum pump.
The above-mentioned scheme that this application provided, at work, the tail gas import of first gas access 6 and the tail gas discharge port intercommunication of membrane deposition reaction chamber 12, heat the tail gas of first gas access 6 of flowing through heating device 5, make at least partial material in the tail gas take place to decompose, in addition, the material that does not take place to decompose enters into second gas access 7 back, further reaction carries out with the reaction gas of reaction gas input port 4 input is in order to decompose and produce the particulate matter, aforesaid produced particulate matter is intercepted by filter equipment 9, make the gas of second gas access 7 exhaust comparatively pure, consequently, avoided the tail gas not thoroughly decompose before aspiration pump 13 and lead to decomposing to produce a large amount of particulate matters in aspiration pump 13 or the large amount of particulate matters that generate before aspiration pump 13 are taken out and lead to the dead problem emergence of aspiration pump 13 card in aspiration pump 13.
As shown in fig. 9, another implementation of the present invention provides a film deposition system, which includes a film deposition reaction chamber 12, a suction pump 13 and the exhaust gas treatment device 1 of the above embodiment, the exhaust gas inlet of the second gas passage 7 is communicated with the exhaust gas outlet of the film deposition reaction chamber 12, the suction pump 13 is communicated with the exhaust gas outlet of the first gas passage 6, and the reaction gas inlet 4 is connected to the reaction gas supply device. When the device works, the tail gas inlet of the second gas passage 7 is communicated with the tail gas outlet of the film deposition reaction cavity 12, the tail gas entering the second gas passage 7 reacts with the reaction gas input by the reaction gas input port 4 to decompose and generate particles, and the generated particles are intercepted by the filtering device 9, so that the gas discharged by the second gas passage 7 is relatively pure, and the problem that the tail gas is not completely decomposed before the air pump 13 to decompose and generate a large amount of particles in the air pump 13 or a large amount of particles generated before the air pump 13 are pumped into the air pump 13 to cause the air pump 13 to be blocked is avoided. Further, part of the substances in the gas discharged from the second gas passage 7 can be decomposed by heating in the first gas passage 6.
It will be understood that any reference to the above orientation or positional relationship as indicated by the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc., is intended to be based on the orientation or positional relationship shown in the drawings and is for convenience in describing and simplifying the invention, and does not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be considered as limiting. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the invention herein disclosed is not limited to the particular combination of features described above, but also encompasses other arrangements formed by any combination of features described above or equivalents thereof without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (11)
1. An exhaust gas treatment device, comprising:
a first gas passage and a second gas passage connected to each other;
the first gas passage is provided with a heating device;
a filtering device is arranged in the second gas passage, and the second gas passage is provided with a reaction gas inlet; at least part of the filter means is located in front of the reactant gas inlet in the direction of flow of the off gas in the second gas passage.
2. The exhaust gas treatment device of claim 1, wherein the exhaust gas outlet of the first gas passageway is connected to the exhaust gas inlet of the second gas passageway, and the reactant gas input port is proximate the exhaust gas outlet of the first gas passageway.
3. The exhaust gas treatment device according to claim 1 or 2, wherein the filter device comprises at least two screens arranged side by side in the direction of exhaust gas flow in the second gas passage.
4. The exhaust gas treatment device according to claim 3, wherein the screen comprises a conical screen having a conical tip facing in a direction of flow of the exhaust gas in the second gas passage.
5. The exhaust treatment device of claim 4, wherein the screens further comprise planar screens disposed at least between adjacent ones of the conical screens.
6. The exhaust gas treatment device according to claim 5, wherein the planar screen is disposed at least at a bottom of the conical screen.
7. The exhaust gas treatment device according to claim 5, wherein the planar screen is provided at a tip of the conical screen located at the head, near the exhaust gas inlet of the second gas passage.
8. The exhaust gas treatment device according to claim 3, further comprising a screen mounting bracket to which each of the screens is sequentially fixed in a direction in which the exhaust gas flows in the second gas passage.
9. The exhaust gas treatment device according to claim 3, wherein each filter screen comprises a sheet-shaped main body, filter holes are arranged on the sheet-shaped main body, and the pore diameters of the filter holes are the same or different.
10. The exhaust gas treatment device according to claim 1 or 2, wherein the heating device is arranged on an inner side and/or an outer side of the first gas passage.
11. A film deposition system comprising a film deposition reaction chamber, a suction pump and the tail gas treatment device according to any one of claims 1 to 10, wherein the tail gas inlet of the first gas passage is communicated with the tail gas outlet of the film deposition reaction chamber, the suction pump is communicated with the tail gas outlet of the second gas passage, and the reaction gas inlet is connected with a reaction gas supply device; alternatively, the first and second electrodes may be,
the tail gas inlet of the second gas passage is communicated with the tail gas outlet of the film deposition reaction cavity, the air pump is communicated with the tail gas outlet of the first gas passage, and the reaction gas inlet is connected with a reaction gas supply device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120283365.5U CN214635144U (en) | 2021-02-01 | 2021-02-01 | Tail gas treatment device and film deposition system |
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| CN202120283365.5U CN214635144U (en) | 2021-02-01 | 2021-02-01 | Tail gas treatment device and film deposition system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351119A (en) * | 2021-12-14 | 2022-04-15 | 泰州隆基乐叶光伏科技有限公司 | Exhaust system of deposition reaction chamber and film deposition equipment |
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2021
- 2021-02-01 CN CN202120283365.5U patent/CN214635144U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351119A (en) * | 2021-12-14 | 2022-04-15 | 泰州隆基乐叶光伏科技有限公司 | Exhaust system of deposition reaction chamber and film deposition equipment |
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