CN112376035A - Reaction device suitable for preparing high-In-component InGaN material - Google Patents

Reaction device suitable for preparing high-In-component InGaN material Download PDF

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Publication number
CN112376035A
CN112376035A CN202011200900.2A CN202011200900A CN112376035A CN 112376035 A CN112376035 A CN 112376035A CN 202011200900 A CN202011200900 A CN 202011200900A CN 112376035 A CN112376035 A CN 112376035A
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cavity
reaction
reaction cavity
heating device
heating
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Inventor
全知觉
诸荣烽
曹�盛
吴先民
何丽华
汤绘华
佟金山
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Nanchang Guiji Semiconductor Technology Co ltd
Nanchang University
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Nanchang Guiji Semiconductor Technology Co ltd
Nanchang University
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Priority to CN202011200900.2A priority Critical patent/CN112376035A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Abstract

The invention discloses a reaction device suitable for preparing high In component InGaN material, which comprises a reaction cavity, a sample stage device, a beam source furnace, a gas ionizer, a vacuum system and a heating device, wherein: the heating device comprises a substrate heating device and a cavity heating device. According to the reaction device provided by the invention, the substrate heating device and the reflecting cup with the cooling pipeline are arranged on the heater support plate, so that the heating light beam and the radiation heat are focused on the surface of the substrate, the heating power utilization rate is improved, the direct irradiation of the heating light source on various components in the cavity is isolated, and the risk of damage of the components due to overhigh temperature is reduced. The reaction device provided by the invention also has the advantages of low energy consumption, high yield, excellent material quality and the like.

Description

Reaction device suitable for preparing high-In-component InGaN material
Technical Field
The invention relates to the technical field of semiconductor film epitaxial growth, In particular to a reaction device suitable for preparing an InGaN material with a high In component.
Background
Nitride materials are widely used in the fields of light emitting diodes, electronic devices, solar cells, and the like because of their excellent properties.
When the currently common organic metal chemical vapor deposition method is used for preparing an InGaN material with a high In component, In desorption is easily caused by an excessively high growth temperature, and incorporation of In is not facilitated; the relatively low growth temperature is not favorable for NH3Cannot provide a sufficient N source, and thus it is difficult to prepare an InGaN material having an In composition higher than 30%. In addition, the higher vacuum environment which cannot be achieved by the MOCVD equipment used when the material is prepared by the metal organic chemical vapor deposition method is easy to introduce C, H, O and other impurities, and the growth quality of the material is influenced. The plasma assisted molecular beam epitaxy (RF-MBE) growth technology generates nitrogen plasma through a radio frequency power supply, can provide sufficient N source, and can realize the growth of high In component InGaN material under the low temperature condition. However, in the currently used RF-MBE growth apparatus, since the sample stage can only self-rotate together with the heater, the number of substrates to be held is seriously affected, which is disadvantageous for mass production. Atomic layer deposition is a method that can plate a substance on the surface of a substrate layer by layer in the form of a monoatomic film, and can grow a nitride material with excellent film quality at a lower temperature, but the defects are obvious, such as extremely slow deposition rate, and mass production cannot be realized. Other common material preparation devices comprise magnetron sputtering, hydride vapor phase epitaxy, evaporation tables and the like, which are difficult to realizeThe complex InGaN/GaN quantum well structure can not reach the requirement.
Disclosure of Invention
The invention aims to provide a reaction device suitable for preparing a high-In-component InGaN material, which can provide high vacuum and low-temperature atmosphere and solve the problems of low yield, difficult growth of the high-In-component InGaN material and the like In the prior art.
The purpose of the invention is realized as follows:
a reaction device suitable for preparing high In component InGaN material is characterized In that: including reaction cavity, gas ionization ware, restraint source stove, sample platform device, vacuum system and heating device, wherein:
the top in the reaction cavity is provided with a sample table device, the sample table device comprises a sample table rotating device and a slide glass frame, the slide glass frame is used for accommodating substrates, and the sample table rotating device drives the slide glass frame to rotate and revolve;
a heating device is arranged in the reaction cavity and comprises a substrate heating device for heating the substrate and a cavity heating device for baking the cavity; the substrate heating devices are light-gathering radiation heating devices and comprise heating light sources, reflecting cups and heater support plates, the bottom ends of the heater support plates are fixed on the reaction cavity bottom plate in the reaction cavity, the bottom ends of the reflecting cups are fixed on the heater support plates and are in a vertical state, and the reflecting cups and the heater support plates jointly enclose a semi-closed space which is opened upwards and only the top end of each semi-closed space can be used for light to exit; the heating light source is arranged in a semi-closed space enclosed by the reflecting cup and the heater support plate; the reflecting cup is of a double-layer structure, a hollow interlayer is arranged between the inner surface and the outer surface of the reflecting cup, the cooling pipeline is introduced into the reflecting cup from the heater support plate and wound in the interlayer between the inner surface and the outer surface of the reflecting cup, the temperatures of the reflecting cup and the heater support plate are controlled by introducing different cooling media into the cooling pipeline, and the components on the peripheral side are prevented from being heated by the reflecting cup and the heater support plate; the temperature of the heater support plate and the temperature of the reflecting cup can be controlled between 0 and 100 ℃ by controlling the cooling medium and the flow velocity in the cooling pipeline; a cavity heating device is arranged above the middle of the reaction cavity bottom plate and is positioned among the gas ionizer, the beam source furnace and the substrate heating device, and the cavity heating device heats the whole reaction cavity by adopting a thermal radiation method;
the vacuum system for vacuumizing the reaction cavity comprises three groups of pumps, namely a mechanical pump, a molecular pump and a cryogenic pump, wherein: the molecular pump is arranged outside the reaction cavity, the input end of the molecular pump is arranged on the left side wall of the middle part of the reaction cavity so as to be communicated with the reaction cavity, the mechanical pump is used as a backing pump of the molecular pump, and the input end of the mechanical pump is connected with the output end of the molecular pump; the cryopump is arranged outside the reaction cavity body, and the input end of the cryopump is arranged at the top outside the reaction cavity body and communicated with the reaction cavity body; the vacuum system is matched with the cavity baking function of the cavity heating device, so that high background vacuum can be realized;
the plurality of beam source furnaces and the plurality of gas ionizers are vertically arranged on the bottom plate of the reaction cavity, and the gas ionizers, the beam source furnaces and the substrate heating device are all positioned under the arc line formed by the rotation of the slide rack.
The number that the slide holder can hold the substrate is 1~7, and the number of slide holder is 1~9, and the position of placing of slide holder all is located the circular arc line of a concentric circle, and also revolves along this circular arc line during the rotation.
The number of the gas ionizers is 1-4, and the gas ionizers are used for providing anions required by growth.
The number of the beam source furnaces is 1-6, and the beam source furnaces are used for providing various cations required by growth.
The number of the substrate heating devices is 3-12, the substrate heating devices are uniformly arranged on a reaction cavity bottom plate, and the left side and the right side of each substrate heating device are respectively provided with a gas ionizer or a beam source furnace.
The inner surface of the reflecting cup is parabolic.
The heating light source is positioned at the parabolic focus of the inner surface of the reflecting cup, and the reflecting cup can focus the heating light beam and the radiant heat generated by the heating light source to the substrate, so that the integral heating of the reaction cavity is avoided.
The heating light source is an infrared quartz radiation lamp or a halogen lamp.
The vacuum system can vacuumize the background to 1 × 10 by matching with the baking effect of the reaction cavity of the cavity heating device-6Pa or less.
According to the method, a high-purity metal simple substance is used as a metal source, metal cations are obtained In an evaporation mode provided by a beam source furnace, ammonia gas or nitrogen gas is ionized by a high-frequency induction mode provided by a gas ionizer to obtain nitrogen ions, and finally growth of the InGaN material is carried out under low pressure and at the substrate temperature of lower than 300 ℃, so that the InGaN material with the In component of higher than 30% can be prepared.
The device for preparing the high-In-content InGaN material has lower working temperature, the energy consumption In the working process is far lower than that of the traditional MOCVD device, and the light beam and the radiant heat generated by the heating light source are focused to the slide glass frame by arranging the reflecting cup with the cooling pipeline, so that the utilization rate of the heating power of the heating light source is further improved; meanwhile, the reflecting cup provided with the cooling pipeline can serve as a cold screen and isolate direct irradiation of the heating light source to various components in the reaction cavity, so that the risk of damage to the components due to overhigh temperature is reduced. In addition, the invention can simultaneously maintain the temperature of the substrates on the plurality of slide racks and realize the rotation of the slide racks, and can effectively improve the productivity on the premise of ensuring the growth of materials.
The invention can produce the following effects:
1. the growth of the high-In-component InGaN material can be carried out In the atmosphere of low temperature and high vacuum, which is beneficial to avoiding the problem of material growth quality caused by impurity elements such as C, H, O;
2. by arranging the two heating devices, the purposes of saving energy and protecting other components in the reaction cavity can be achieved to a greater extent;
3. compared with RF-MBE, the number of substrates which can be placed at one time is large, and the yield is high;
4. low energy consumption and excellent material quality.
Drawings
FIG. 1 is a schematic view of the present invention;
FIG. 2 is a schematic top view of a reaction chamber floor with a beam source furnace, a gas ionizer, and a substrate heating apparatus;
FIG. 3 is a schematic view of a substrate heating apparatus of the present invention;
wherein: the device comprises a reaction cavity 1, a reaction cavity 11, a reaction cavity bottom plate, a gas ionizer 2, a source furnace 3, a sample stage 4, a sample stage rotating device 41, a slide holder 42, a substrate heating device 5, a heating light source 51, a heater support plate 52, a reflector 53, a cooling pipeline 531, a vacuum system 6, a mechanical pump 61, a molecular pump 62, a cryogenic pump 63 and a cavity heating device 7.
Detailed Description
The technical solution in the embodiment of the present invention is further described below with reference to the drawings in the embodiment of the present invention. In addition, the drawings of the present invention are not to scale, but are to be understood as being simplified and not to scale.
A reaction device suitable for preparing high In component InGaN material comprises a reaction cavity 1, a gas ionizer 2, a beam source furnace 3, a sample stage device 4, a substrate heating device 5, a vacuum system 6 and a cavity heating device 7, wherein:
the sample stage device 4 is arranged at the top in the reaction cavity 1, the sample stage device 4 comprises a sample stage rotating device 41 and a slide glass frame 42, a hollow groove is formed in the slide glass frame 42 and used for containing a substrate, the slide glass frame 42 is fixed on a support at the lower end of the sample stage rotating device 41 through an embedded structure, the upper end of the sample stage rotating device 41 is movably arranged on a circular rotating track through a magnetic coupling rotor, and one end containing the magnetic coupling rotor rotates under the action of a gear and drives the slide glass frame 42 to rotate together;
the substrate heating device 5 and the cavity heating device 7 are heated by using a thermal radiation method, wherein the substrate heating device 5 is a light-gathering type thermal radiation heating device and is used for heating a substrate in a reaction process, the substrate heating device 5 comprises a heating light source 51, a heater support plate 52 and a reflecting cup 53, the bottom end of the heater support plate 52 is fixed on a reaction cavity bottom plate 11 in the reaction cavity 1, the reflecting cup 53 is fixed on the heater support plate 52 and is in a vertical state, and the reflecting cup 53 and the heater support plate 52 jointly enclose a semi-closed space which is provided with an upward opening and only has a top end for light to exit; the heating light source 51 is fixed on the heater support plate 52 and is positioned at the parabolic focus of the inner surface of the reflecting cup 53, the reflecting cup 53 is of a double-layer structure, a cooling pipeline 531 internally provided with a cooling medium is introduced into the reflecting cup 53 from the heater support plate 52 and is wound in the interlayer of the inner surface and the outer surface of the reflecting cup 53, and the temperature of the heater support plate 52 and the temperature of the reflecting cup 53 can be controlled between 0 and 100 ℃ by controlling the cooling medium and the flow speed in the cooling pipeline 531; the light emitted by the substrate heating device 5 can just cover the rotating path of the slide holder 42 on the bracket of the whole sample stage rotating device 41, so that the substrate on the slide holder 42 is always in a heating state in the rotating process, the temperature rise of the whole reaction cavity 1 can be avoided, and the heating power utilization rate of the heating light source 51 is improved to the maximum extent; the cavity heating device 7 is arranged above the middle of a reaction cavity bottom plate 11 in the reaction cavity 1 and is positioned among the gas ionizer 2, the beam source furnace 3 and the substrate heating device 5, the cavity heating device 7 adopts a thermal radiation method to bake and heat the whole reaction cavity 1 before reaction, and the gas adsorbed on the inner wall of the reaction cavity 1 can be more effectively removed by matching with the vacuum system 6, so that the background vacuum of the reaction cavity 1 is improved; the baking temperature of the cavity heating device 7 is lower than 200 ℃, and in the baking process, the components in the reaction cavity 1 are not in the running state, and the other components in the reaction cavity 1 cannot be damaged by baking in the running state.
The 6 substrate heating devices 5 are uniformly arranged on the reaction cavity bottom plate 11 and are respectively arranged between the 2 gas ionizers 2 and the 4 beam source furnaces 3.
The gas ionizer 2, the beam source furnace 3, and the substrate heating apparatus 5 are all located right below the circular arc line formed by the rotation of the carrier 42.
The vacuum system 6 for evacuating the reaction chamber 1 comprises three groups of pumps, namely a mechanical pump 61, a molecular pump 62 and a cryogenic pump 63, wherein: the molecular pump 62 is arranged outside the reaction cavity 1, and the input end of the molecular pump 62 is arranged on the left side wall of the middle part of the reaction cavity 1 so as to be communicated with the reaction cavity 1; the mechanical pump 61 is used as a pre-pump of the molecular pump 2, and the input end of the mechanical pump 61 is connected with the output end of the molecular pump 62; the cryopump 63 is disposed outside the reaction chamber 1, and the input end of the cryopump 63 is disposed outside the reaction chamber 1Is communicated with the reaction cavity 1; when the whole vacuum system is working, the background can be vacuumized to 1 x 10-6Pa or less.
The number of the substrate holders 42 capable of holding the substrates is 1-7, the number of the substrate holders 42 is 1-9, the placing positions of the substrate holders 42 are all located on an arc line of a concentric circle, and the substrate holders revolve along the arc line during rotation.
The gas ionizer 2 is used to supply anions required for growth, and the beam source furnace 3 is used to supply various cations required for growth.
The inner surface of the reflector cup 53 is parabolic, and the reflector cup 53 vertically reflects the light emitted through the parabolic focus and finally focuses the light at the substrate with a small divergence angle.
The heating light source 51 is arranged on the heater carrier plate 52 and is positioned at the parabolic focus of the inner surface of the reflecting cup 53, and the reflecting cup 53 can focus the heating light beam and the radiant heat generated by the heating light source 51 to the substrate, so that the whole reaction cavity 1 is prevented from being heated.
The heating light sources of the chamber heating means 5 and the substrate heating means 6 are infrared quartz radiation lamps or halogen lamps. The two groups of heating devices have different purposes so as to achieve the purpose of energy conservation.
The reaction device can realize the growth of the InGaN material at the temperature of the substrate lower than 300 ℃, and can prepare the InGaN material with the In component higher than 30%.
Before preparing the material, firstly opening the cavity heating device 7, removing gas adsorbed on the inner wall of the cavity by matching with the mechanical pump 61 and the molecular pump 62, then closing the cavity heating device 7 and starting the low-temperature pump 63 so as to improve the background vacuum of the reaction cavity 1; in the material growth process, the vacuum system 6 continues to operate, the vacuum degree required by the reaction process is maintained, then the substrate heating device 5 and the sample stage rotating device 41 are opened to heat the substrate on the slide holder 42, after the preset temperature is reached, the gas ionizer 2 and the beam source furnace 3 are started to respectively provide anions and cations required by the material growth, and when the substrate on the slide holder 42 sequentially passes right above the gas ionizer 2 and the beam source furnace 3, the anions and the cations sequentially reach the surface of the substrate to be stacked layer by layer, so that the material growth is realized.
The above description is only for the preferred embodiment of the present invention, but the present invention is not limited to the scope of the present invention as shown in the drawings. All changes, modifications and equivalents that come within the spirit and scope of the invention are desired to be protected by the following claims.

Claims (10)

1. A reaction device suitable for preparing high In component InGaN material is characterized In that: including reaction cavity, gas ionization ware, restraint source stove, sample platform device, vacuum system and heating device, wherein:
the top in the reaction cavity is provided with a sample table device, the sample table device comprises a sample table rotating device and a slide glass rack, the slide glass rack is used for accommodating substrates, and the sample table rotating device drives the slide glass rack to rotate;
a heating device is arranged in the reaction cavity and comprises a substrate heating device for heating the substrate and a cavity heating device for baking the cavity; the substrate heating devices are light-gathering radiation heating devices and comprise heating light sources, reflecting cups and heater support plates, the bottom ends of the heater support plates are fixed on the reaction cavity bottom plate in the reaction cavity, the reflecting cups are fixed on the heater support plates and are in a vertical state, and the reflecting cups and the heater support plates jointly enclose a semi-closed space which is opened upwards and only the top ends of the reflecting cups can be used for light to exit; the heating light source is arranged in a semi-closed space enclosed by the reflecting cup and the heater support plate; the reflecting cup is of a double-layer structure, a hollow interlayer is arranged between the inner surface and the outer surface of the reflecting cup, the cooling pipeline is introduced into the reflecting cup from the heater support plate and wound in the interlayer between the inner surface and the outer surface of the reflecting cup, the temperatures of the reflecting cup and the heater support plate are controlled by introducing different cooling media into the cooling pipeline, and the components on the peripheral side are prevented from being heated by the reflecting cup and the heater support plate; the temperature of the heater support plate and the temperature of the reflecting cup can be controlled between 0 and 100 ℃ by controlling the cooling medium and the flow velocity in the cooling pipeline; a cavity heating device is arranged above the middle of the reaction cavity bottom plate and is positioned among the gas ionizer, the beam source furnace and the substrate heating device, and the cavity heating device heats the whole reaction cavity by adopting a thermal radiation method;
the vacuum system for vacuumizing the reaction cavity comprises three groups of pumps, namely a mechanical pump, a molecular pump and a cryogenic pump, wherein: the molecular pump is arranged outside the reaction cavity, the input end of the molecular pump is arranged on the left side wall of the middle part of the reaction cavity so as to be communicated with the reaction cavity, the mechanical pump is used as a backing pump of the molecular pump, and the input end of the mechanical pump is connected with the output end of the molecular pump; the cryopump is arranged outside the reaction cavity body, and the input end of the cryopump is arranged at the top outside the reaction cavity body and communicated with the reaction cavity body; the vacuum system is matched with the cavity baking function of the cavity heating device, so that high background vacuum can be realized;
the plurality of beam source furnaces and the plurality of gas ionizers are vertically arranged on the bottom plate of the reaction cavity, and the gas ionizers, the beam source furnaces and the substrate heating device are all positioned under the arc line formed by the rotation of the slide rack.
2. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the number that the slide holder can hold the substrate is 1~7, and the number of slide holder is 1~9, and the position of placing of slide holder all is located the circular arc line of a concentric circle, and also revolves along this circular arc line during the rotation.
3. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the number of the gas ionizers is 1-4, and the gas ionizers are used for providing anions required by growth.
4. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the number of the beam source furnaces is 1-6, and the beam source furnaces are used for providing various cations required by growth.
5. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the number of the substrate heating devices is 3-12, the substrate heating devices are uniformly arranged on a reaction cavity bottom plate, and the left side and the right side of each substrate heating device are respectively provided with a gas ionizer or a beam source furnace.
6. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the inner surface of the reflecting cup is parabolic.
7. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the heating light source is positioned at the parabolic focus of the inner surface of the reflecting cup.
8. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 6, wherein: the heating light source is an infrared quartz radiation lamp or a halogen lamp.
9. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the vacuum system can vacuumize the background to 1 x 10-6Pa or less.
10. The reaction apparatus for preparing high In composition InGaN material as claimed In claim 1, wherein: the growth of the InGaN material can be realized at the substrate temperature of less than 300 ℃, and the InGaN material with the In component of more than 30% is prepared.
CN202011200900.2A 2020-11-02 2020-11-02 Reaction device suitable for preparing high-In-component InGaN material Pending CN112376035A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107675141A (en) * 2017-10-25 2018-02-09 南昌大学 A kind of device for being used to prepare nitride material
CN114855270A (en) * 2022-04-21 2022-08-05 南昌大学 Molecular beam-like epitaxy equipment and film preparation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107675141A (en) * 2017-10-25 2018-02-09 南昌大学 A kind of device for being used to prepare nitride material
CN107675141B (en) * 2017-10-25 2023-08-04 南昌大学 Device for preparing nitride material
CN114855270A (en) * 2022-04-21 2022-08-05 南昌大学 Molecular beam-like epitaxy equipment and film preparation method
CN114855270B (en) * 2022-04-21 2023-07-28 南昌大学 Molecular beam-like epitaxy equipment and film preparation method

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