CN112311250A - 半导体模块构造 - Google Patents
半导体模块构造 Download PDFInfo
- Publication number
- CN112311250A CN112311250A CN202010704285.2A CN202010704285A CN112311250A CN 112311250 A CN112311250 A CN 112311250A CN 202010704285 A CN202010704285 A CN 202010704285A CN 112311250 A CN112311250 A CN 112311250A
- Authority
- CN
- China
- Prior art keywords
- bus bar
- semiconductor element
- semiconductor
- capacitor
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 4
- 229920005989 resin Polymers 0.000 claims abstract description 4
- 239000003507 refrigerant Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 2
- 239000002826 coolant Substances 0.000 abstract description 3
- 238000009499 grossing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
Abstract
提供能够将汇流条有效地冷却并小型化的半导体模块构造。本发明的半导体模块构造的特征在于,具备:半导体元件部;第一汇流条,夹持半导体元件部并且与半导体元件部电连接;及电容器元件,经由第二汇流条而与第一汇流条电连接,在与夹持半导体元件部的位置对应的第一汇流条的表面形成有导电性的冷却翅片,在冷却翅片的内部供给有绝缘性的制冷剂。最好是,半导体元件部具有将半导体元件收容于内部的封装构造,在封装构造内的空间填充有树脂模制件。最好是,第一汇流条由圆环状的构件形成,半导体元件部及电容器元件的组沿着第一汇流条的周向而配置有多个。
Description
技术领域
本发明涉及半导体模块构造。
背景技术
在专利文献1中记载了以下的构造:具备开关元件、电容器、将开关元件与电容器电连接的汇流条及将开关元件和电容器配置于同一平面上并冷却的冷却器,为了冷却汇流条,汇流条经由电绝缘性热传导件而与冷却器接触。
现有技术文献
专利文献
专利文献1:日本特开2017-188998号公报
发明内容
发明所要解决的课题
在专利文献1所记载的构造中,由于为了冷却汇流条而需要使汇流条与电绝缘性热传导件接触,所以汇流条的长度变长,难以谋求构造的小型化。而且,在专利文献1所记载的构造中,由于汇流条经由电绝缘性热传导件而与冷却器接触,所以汇流条的冷却性能有可能不足。结果,可能会导致汇流条发热且连接于汇流条的开关元件、电容器等元件成为高温。
本发明鉴于上述课题而完成,其目的在于,提供能够将汇流条有效地冷却并实现小型化的半导体模块构造。
用于解决课题的手段
本发明的半导体模块构造的特征在于,具备:半导体元件部;第一汇流条,夹持所述半导体元件部并且与该半导体元件部电连接;及电容器元件,经由第二汇流条而与所述第一汇流条电连接,在与夹持所述半导体元件部的位置对应的所述第一汇流条的表面形成有导电性的冷却翅片,在该冷却翅片的内部供给有绝缘性的制冷剂。
最好是,半导体元件部具有将半导体元件收容于内部的封装构造,在封装构造内的空间填充有树脂模制件。
最好是,第一汇流条由圆环状的构件形成,半导体元件部及电容器元件的组沿着第一汇流条的周向而配置有多个。
发明效果
根据本发明的半导体模块构造,由于冷却翅片兼具冷却功能和汇流条的功能,所以能够将汇流条有效地冷却并小型化。
附图说明
图1是示出由作为本发明的一实施方式的半导体模块构造形成的电子电路的结构的图。
图2是示出作为本发明的一实施方式的半导体模块构造的结构的俯视图及剖视图。
具体实施方式
以下,参照附图,对作为本发明的一实施方式的半导体模块构造进行说明。
〔电路结构〕
首先,参照图1,对由作为本发明的一实施方式的半导体模块构造形成的电子电路的结构进行说明。
图1是示出由作为本发明的一实施方式的半导体模块构造形成的电子电路的结构的图。如图1所示,由作为本发明的一实施方式的半导体模块构造形成的电子电路1是通过使多个开关元件进行开关动作而将从蓄电池等电源B输出的直流电力变换为三相(U相、V相、W相)的交流电力并从端子T1、T2输出的电子电路,搭载于车辆。需要说明的是,开关动作意味着成为控制对象的开关元件的接通/断开切换的动作。
在本实施方式中,电子电路1具备开关元件S1a、S1b、开关元件S2a、S2b、开关元件S3a、S3b及电容器元件C1、C2、C3。
各开关元件由半导体开关元件构成。作为半导体开关元件,使用IGBT(InsulatedGate Bipolar Transistor:绝缘栅双极型晶体管)。在IGBT的集电极端子与发射极端子之间以与发射极端子连接的一侧为阳极而连接有二极管(整流元件)。在使用IGBT以外的元件作为半导体开关元件的情况下,以使与在开关元件导通时流动的电流反向的电流流动的方式对半导体开关元件并联连接二极管。二极管也可以是伴随于半导体开关元件的寄生二极管。在本说明书中,将半导体开关元件和二极管合起来的结构称作开关元件。
开关元件S1a和开关元件S1b的组在节点N1及节点N12处串联连接于与电源B的正极电连接的正极汇流条(P汇流条)L1和与电源B的负极电连接的负极汇流条(N汇流条)L2之间。另外,电容器元件C1以相对于开关元件S1a和开关元件S1b并联连接的方式在节点N2及节点N11处分别经由电容器汇流条L5a及电容器汇流条L5b而连接于正极汇流条L1及负极汇流条L2。电容器元件C1作为将通过开关元件S1a、S1b的开关动作而输出的U相的交流电力平滑化的平滑电容器发挥功能。
开关元件S2a和开关元件S2b的组在节点N3及节点N10处串联连接于正极汇流条L1与负极汇流条L2之间。另外,电容器元件C2以相对于开关元件S2a和开关元件S2b并联连接的方式在节点N4及节点N9处分别经由电容器汇流条L6a及电容器汇流条L6b而连接于正极汇流条L1及负极汇流条L2。电容器元件C2作为将通过开关元件S2a、S2b的开关动作而输出的V相的交流电力平滑化的平滑电容器发挥功能。
开关元件S3a和开关元件S3b的组在节点N5及节点N8处串联连接于正极汇流条L1与负极汇流条L2之间。另外,电容器元件C3以相对于开关元件S3a和开关元件S3b并联连接的方式在节点N6及节点N7处分别经由电容器汇流条L7a及电容器汇流条L7b而连接于正极汇流条L1及负极汇流条L2。电容器元件C3作为将通过开关元件S3a、S3b的开关动作而输出的W相的交流电力平滑化的平滑电容器发挥功能。
〔构造〕
接着,参照图2(a)、(b),对作为本发明的一实施方式的半导体模块构造进行说明。
图2(a)、(b)分别是示出作为本发明的一实施方式的半导体模块构造的结构的俯视图及图2(a)的A-A线剖视图。如图2(a)、(b)所示,作为本发明的一实施方式的半导体模块构造具备具有导电性的冷却翅片4的圆环状的正极汇流条L1及负极汇流条L2、由正极汇流条L1和负极汇流条L2夹持的多个半导体元件部5及经由电容器汇流条L5a、L5b、L6a、L6b、L7a、L7b而连接于正极汇流条L1及负极汇流条L2的电容器元件C1~C3。需要说明的是,在图2(a)中,省略了电容器汇流条L5b、L6b、L7b的图示。
半导体元件部5具有将由铜制的散热器6夹持的开关元件的组(在本例中是开关元件S1a和开关元件S1b的组)收容于内部的封装构造,沿着正极汇流条L1及负极汇流条L2的周向隔开规定间隔而配置。半导体元件部5内的开关元件的组与正极汇流条L1和负极汇流条L2电连接,形成了图1所示的电子电路1。另外,形成半导体元件部5的封装构造的内部空间S由树脂模制件填充。
在与夹持半导体元件部5的位置对应的正极汇流条L1及负极汇流条L2的表面形成有导电性的冷却翅片4,在冷却翅片4的内部供给有绝缘性的制冷剂。通过在夹持半导体元件部5的位置设置导电性的冷却翅片4,能够冷却正极汇流条L1及负极汇流条L2和半导体元件部5双方。另外,通过将冷却翅片4设为导电性,能够使冷却翅片4具有汇流条的功能。不过,在将冷却翅片4设为了导电性的情况下,优选在正极汇流条L1与负极汇流条L2之间夹设绝缘性的制冷剂,通过绝缘性的制冷剂来确保正极汇流条L1与负极汇流条L2之间的绝缘性。
从以上的说明明显可知,作为本发明的一实施方式的半导体模块构造具备:半导体元件部5;正极汇流条L1及负极汇流条L2,夹持半导体元件部5并且与半导体元件部5电连接;及电容器元件C1~C3,经由电容器汇流条L5a、L5b、L6a、L6b、L7a、L7b而与正极汇流条L1及负极汇流条L2电连接,在与夹持半导体元件部5的位置对应的正极汇流条L1及负极汇流条L2的表面形成有导电性的冷却翅片4,在冷却翅片4的内部供给有绝缘性的制冷剂。并且,根据这样的结构,由于冷却翅片4兼具冷却功能和汇流条的功能,所以能够将汇流条有效地冷却并小型化。
以上,虽然对应用了由本申请的发明人完成的发明的实施方式进行了说明,但本发明不由基于本实施方式的构成本发明的公开的一部分的记述及附图限定。即,基于本实施方式而由本领域技术人员等完成的其他的实施方式、实施例及运用技术等全部包含于本发明的范畴。
标号说明
1 电子电路
4 冷却翅片
5 半导体元件部
6 散热器
B 电源
C1、C2、C3 电容器元件
L1 正极汇流条
L2 负极汇流条
L5a、L5b、L6a、L6b、L7a、L7b 电容器汇流条
S1a、S1b、S2a、S2b、S3a、S3b 开关元件
T1、T2 端子。
Claims (3)
1.一种半导体模块构造,其特征在于,具备:
多个电容器元件;
半导体元件部;
两个汇流条,夹持所述半导体元件部并且与该半导体元件部电连接;及
导电性的冷却翅片,形成于夹持所述半导体元件部的位置的所述两个汇流条各自的表面,
在该冷却翅片的内部供给有绝缘性的制冷剂。
2.根据权利要求1所述的半导体模块构造,其特征在于,
所述半导体元件部具有将半导体元件收容于内部的封装构造,在该封装构造内的空间填充有树脂模制件。
3.根据权利要求1或2所述的半导体模块构造,其特征在于,
所述两个汇流条分别由圆环状的构件形成,所述半导体元件部及所述多个电容器元件的组沿着所述两个汇流条的周向而配置有多个。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-135894 | 2019-07-24 | ||
JP2019135894A JP2021019487A (ja) | 2019-07-24 | 2019-07-24 | 半導体モジュール構造 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112311250A true CN112311250A (zh) | 2021-02-02 |
Family
ID=74189187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010704285.2A Pending CN112311250A (zh) | 2019-07-24 | 2020-07-21 | 半导体模块构造 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11222879B2 (zh) |
JP (1) | JP2021019487A (zh) |
CN (1) | CN112311250A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003319665A (ja) * | 2002-04-19 | 2003-11-07 | Toyota Motor Corp | 電力変換装置 |
JP2013211946A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi Automotive Systems Ltd | 電力変換装置 |
US20140098588A1 (en) * | 2011-06-08 | 2014-04-10 | Hitachi Automotive Systems, Ltd. | Power Module and Power Conversion Apparatus Using Same |
WO2015025582A1 (ja) * | 2013-08-23 | 2015-02-26 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP2016135071A (ja) * | 2015-01-22 | 2016-07-25 | 株式会社日本自動車部品総合研究所 | バスバーモジュール、電気回路 |
CN107112294A (zh) * | 2014-11-21 | 2017-08-29 | 株式会社电装 | 半导体装置以及功率模块 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2244289B1 (en) * | 2000-04-19 | 2014-03-26 | Denso Corporation | Coolant cooled type semiconductor device |
US8755185B2 (en) * | 2010-01-08 | 2014-06-17 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
WO2013084589A1 (ja) * | 2011-12-08 | 2013-06-13 | 富士電機株式会社 | 半導体装置および半導体装置製造方法 |
JP6214710B2 (ja) | 2016-04-05 | 2017-10-18 | 三菱電機株式会社 | 電力変換装置 |
JP6552735B2 (ja) * | 2016-06-21 | 2019-07-31 | 三菱電機株式会社 | 電力変換装置 |
-
2019
- 2019-07-24 JP JP2019135894A patent/JP2021019487A/ja active Pending
-
2020
- 2020-07-09 US US16/924,771 patent/US11222879B2/en active Active
- 2020-07-21 CN CN202010704285.2A patent/CN112311250A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003319665A (ja) * | 2002-04-19 | 2003-11-07 | Toyota Motor Corp | 電力変換装置 |
US20140098588A1 (en) * | 2011-06-08 | 2014-04-10 | Hitachi Automotive Systems, Ltd. | Power Module and Power Conversion Apparatus Using Same |
JP2013211946A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi Automotive Systems Ltd | 電力変換装置 |
WO2015025582A1 (ja) * | 2013-08-23 | 2015-02-26 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
CN107112294A (zh) * | 2014-11-21 | 2017-08-29 | 株式会社电装 | 半导体装置以及功率模块 |
JP2016135071A (ja) * | 2015-01-22 | 2016-07-25 | 株式会社日本自動車部品総合研究所 | バスバーモジュール、電気回路 |
Also Published As
Publication number | Publication date |
---|---|
US11222879B2 (en) | 2022-01-11 |
JP2021019487A (ja) | 2021-02-15 |
US20210028154A1 (en) | 2021-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20140319673A1 (en) | Semiconductor device | |
WO2015072105A1 (ja) | パワーモジュール | |
US10818573B2 (en) | Power semiconductor module with heat dissipation plate | |
EP3358736B1 (en) | Power conversion device | |
US9196561B2 (en) | Semiconductor device to be attached to heat radiation member | |
US20130242631A1 (en) | Power converter apparatus | |
JP2014171342A (ja) | 配線板およびそれを用いた電力変換装置 | |
US10027094B2 (en) | Power module, power converter and drive arrangement with a power module | |
JP6745991B2 (ja) | 半導体パワーモジュール | |
US20220045626A1 (en) | Power converter | |
CN111095760B (zh) | 电力转换装置 | |
US20170084515A1 (en) | Power-Module Device and Power Conversion Device | |
CN108352382B (zh) | 用于电动机的功率模块 | |
KR20150108747A (ko) | 반도체 장치 및 그 제조 방법 | |
JP6123722B2 (ja) | 半導体装置 | |
CN112311250A (zh) | 半导体模块构造 | |
KR20180088394A (ko) | 전기 모터용 파워 모듈 | |
CN112313869A (zh) | 电力转换装置 | |
CN104335472A (zh) | 半导体装置 | |
CN220234496U (zh) | 一种三电平功率单元结构及变频器或逆变器 | |
US11908773B2 (en) | Element module | |
JP7134305B1 (ja) | 電力変換装置 | |
US20240206103A1 (en) | Power module, particularly for power electronics of a vehicle | |
JP7069885B2 (ja) | 半導体装置 | |
JP2023183298A (ja) | 電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210128 Address after: Aichi Prefecture, Japan Applicant after: DENSO Corp. Address before: TOYOTA City, Aichi Prefecture, Japan Applicant before: Toyota Motor Corp. |
|
TA01 | Transfer of patent application right | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |