CN112271138A - Preparation equipment for long-distance wide-width flexible glue-free base material for COF substrate - Google Patents
Preparation equipment for long-distance wide-width flexible glue-free base material for COF substrate Download PDFInfo
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- CN112271138A CN112271138A CN202011281351.6A CN202011281351A CN112271138A CN 112271138 A CN112271138 A CN 112271138A CN 202011281351 A CN202011281351 A CN 202011281351A CN 112271138 A CN112271138 A CN 112271138A
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- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 title abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000012458 free base Substances 0.000 title description 4
- 238000004804 winding Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 57
- 230000008021 deposition Effects 0.000 claims description 56
- 238000001914 filtration Methods 0.000 claims description 44
- 238000005468 ion implantation Methods 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- 238000002385 metal-ion deposition Methods 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 7
- 239000003292 glue Substances 0.000 abstract description 7
- 230000005672 electromagnetic field Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 239000002585 base Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000002114 nanocomposite Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009459 flexible packaging Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation device of a long-distance wide flexible non-glue base material for a COF (chip on film) substrate, which comprises a vacuum chamber wrapped by a vacuum chamber wall plane, wherein an unwinding shaft and a winding shaft are arranged inside the vacuum chamber; the long-time large-area stable extraction of the plasma is achieved through the design of the vacuum chamber and the adjustment of the electromagnetic field, and the service performance is excellent.
Description
Technical Field
The invention relates to the technical field of chip on films, in particular to a preparation device of a long-distance wide-width flexible non-adhesive base material for a COF substrate.
Background
COF is commonly called chip on film, which is a flexible packaging technology for mounting Integrated Circuits (IC) on flexible circuit boards, and uses a flexible additional circuit board as a carrier for packaging chips to combine chips with flexible substrate circuits, or refers to a flexible additional circuit board without packaged chips. Electronic products, especially portable products, are increasingly designed to be light, thin, small and compact. Therefore, new materials and assembly techniques are continuously being developed, and COF is one example. It is very suitable for the application of small-sized panels such as liquid crystal module products of mobile phones or PDAs. COF, i.e. chip on film, which utilizes the characteristics of COG technology process to make the flexible film have the capability of bearing IC and passive components, and in the aspect of flexible folding, the COF is not only helpful to promote the product functionalization, high packaging density, light weight, short and small, but also can improve the added value of the product. Although COF is an emerging IC packaging technology, its process is compatible with conventional FPC and IC mounting technologies, and COF products can be produced using existing equipment. As the pitch of chip mounting decreases and the number of I/os increases, the demand for fine line patterns increases, requiring fine patterns with line widths and pitches less than 50 μm. The trend of various electronic products toward smaller, thinner and lighter products has led to the development of packaging technology toward small volume, high density, free mounting, and COF packaging technology has become the main way of packaging IC.
At present, one of the main problems in the FCCL manufacturing process is that the adhesion between a PI film and a copper foil is poor, and compared with a three-layer flexible copper-clad plate technology, the PI film and the copper foil are easy to crack and delaminate due to the difference of thermal expansion coefficients and the residual stress effect of three materials; meanwhile, due to the poor thermal stability and toughness of the adhesive, the product cannot meet the requirements of heat resistance and flexing resistance provided by many downstream electronic products.
Disclosure of Invention
Technical problem to be solved
In view of the defects of the prior art, the invention provides a preparation device for a long-distance wide-width flexible non-adhesive base material of a COF substrate, which solves the problems mentioned in the background technology.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides a preparation equipment that is used for flexible no glue substrate of long distance broad width of COF base plate, includes the vacuum chamber of being wrapped up by vacuum chamber wall plane, the internally mounted of vacuum chamber has rotatable unreel axle and rolling axle, the vacuum chamber still is provided with the rotatable cooling shaft of a plurality of between unreeling axle and rolling axle, the planar outside of vacuum chamber wall is equipped with molecular pump flange interface, the planar outside of vacuum chamber wall still is equipped with ion implantation flange interface and magnetic filtration deposition flange interface, ion implantation flange interface connection has ion implantation device, and magnetic filtration deposition flange interface connection has magnetic filtration plasma deposition device, molecular pump flange interface connection molecular pump.
Preferably, the number of the molecular pump flange interfaces is eight.
Preferably, the number of the ion implantation flange interfaces is two.
Preferably, the number of the magnetic filter deposition flange interfaces is six.
Preferably, the cooling shaft is arranged opposite to one or two of a molecular pump flange interface, an ion implantation flange interface or a magnetic filtration deposition flange interface.
Preferably, the unwinding shaft and the winding shaft are respectively arranged at two ends in the vacuum chamber.
Preferably, the ion implantation device or the magnetic filtered plasma deposition device can be activated individually or simultaneously.
Preferably, the magnetic filtration plasma deposition devices are respectively two groups, namely a first magnetic filtration plasma deposition device and a second magnetic filtration plasma deposition device.
The use method of the equipment specifically comprises the following steps:
the method comprises the following steps: cleaning and drying a polyimide film roll sample;
step two: opening the vacuum chamber, placing the sample in the first step on a unreeling shaft, drawing one end of the sample to wrap a plurality of cooling shafts respectively, then fixing the sample on a reeling shaft, adjusting the tension, keeping the film smooth, and setting the running speed;
step three: sealing the vacuum chamber 100, vacuumizing, starting an ion implantation device, starting an ion implantation process, and performing metal ion implantation on the surface of the film by using a metal Ti or Ni vapor ion source to form a Ti or Ni implantation layer; wherein the injection voltage of Ti or Ni is 15-45kV, the beam intensity is 1-10mA, and the injection dose of the ion source is 1 x 1015—1×1016/cm2, effective treatment length 510 mm;
step four: the first magnetic filtering plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a Ti or Ni transition layer: wherein the deposition thickness of Ti or Ni is 50nm, and the effective processing length is 510 mm;
step five: the second magnetic filtration plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a metal layer of Cu: wherein the deposition thickness of Cu is about 50nm, and the effective processing length is 510 mm;
step six: the vacuum chamber 100 is opened and the processed sample is removed.
(III) advantageous effects
The invention provides a preparation device of a long-distance wide-width flexible non-glue base material for a COF substrate. Has the following beneficial effects:
1. according to the preparation equipment for the long-distance wide-width flexible non-glue base material of the COF substrate, large particles and neutral atoms generated by an arc source are filtered out through a magnetic filtering technology, a pure plasma beam without large particles is obtained, a high-quality coating can be deposited at a low matrix temperature, and a high-quality nano composite film is prepared by utilizing a magnetic filtering cathode vacuum arc; the method is combined with an ion implantation technology, atoms of a deposited film and atoms of a matrix can be mixed with each other, a mixed layer is formed on an interface, the bonding performance between the film and the matrix is further improved, a wide-width flexible glue-free base material for a COF substrate can be efficiently prepared, the working temperature is low, the method is suitable for various flexible substrates, the whole system works in a high-vacuum environment, the density of the extracted plasma is higher, the compactness of the film layer is good, the long-time large-area stable extraction of the plasma is achieved through the design of a vacuum chamber and the adjustment of an electromagnetic field, and the use performance is excellent.
2. According to the preparation equipment for the long-distance wide-width flexible glue-free base material of the COF substrate, the space layout of a vacuum chamber is changed by combining the advantages of a plasma deposition system, the plasma density is improved, and the problem of wide-width magnetic filtration deposition uniformity is solved to a certain extent; meanwhile, the electromagnetic field distribution of the arc source is improved, the use efficiency and the service life of the arc source are improved, and the problem of long-distance deposition of the non-glue base material is solved; meanwhile, the system is subjected to integrated optimization and operation integration, the system abnormity is automatically monitored, the stability of the system is greatly improved, and ion implantation and magnetic filtration deposition can be independently started; under the condition of ensuring the quality of the film layer, the design size is reduced as much as possible, the space is reduced, and the overall design is further optimized.
Drawings
FIG. 1 is a schematic diagram of the spatial layout structure of the vacuum chamber according to the present invention;
FIG. 2 is a schematic view of a vacuum chamber according to the present invention;
FIG. 3 is a front sectional view of a vacuum chamber of the present invention;
FIG. 4 is a schematic perspective view of the magnetic filtration deposition breadth of the present invention;
FIG. 5 is a schematic view of the deposition width of the magnetic filter of the present invention.
In the figure: 100 vacuum chambers, 101 molecular pump flange interface, 102a unreeling shaft, 102b reeling shaft, 103 cooling shaft, 104 ion implantation flange interface, 105 magnetic filtration deposition flange interface, 106 film body, 201 vacuum chamber wall plane.
Detailed Description
The invention is explained in more detail below with reference to the figures and examples.
The embodiment of the invention provides a preparation device of a long-distance wide-width flexible non-glue base material for COF substrates, as shown in figures 1-5, comprising a vacuum chamber 100, a molecular pump flange interface 101 is arranged at the outer side of the vacuum chamber 100, an unreeling shaft 102a and a reeling shaft 102b are arranged at the inner side of the vacuum chamber 100, a film body 106 is wrapped at the outer side of the reeling and unreeling shaft 1, the reeling and unreeling shafts are arranged to facilitate the reeling and unreeling operations of processed and produced products, a high-quality coating can be deposited at a low substrate temperature by pure plasma beams without large particles, a high-quality nano composite film is prepared by using a magnetic filtration cathode vacuum arc, atoms of the deposited film and substrate atoms can be mixed with each other by combining with an ion implantation technology, a mixed layer is formed on an interface, the bonding performance between the film and the substrate is further improved, the reeling and unreeling shafts are connected with a cooling shaft 103 through the, the outer side of the vacuum chamber 100 is provided with a vacuum chamber wall plane 210, one side of the vacuum chamber wall plane 201 is provided with an ion implantation flange interface 104 and a magnetic filtration deposition flange interface 105, one side of the vacuum chamber wall plane 201 is connected with ion implantation and plasma deposition equipment, through the matching of the cooling shaft 103, the ion implantation flange interface 104 and the magnetic filtration deposition flange interface 105, the ion implantation and the magnetic filtration deposition can be independently started through the matching use of the ion implantation and the plasma deposition equipment, under the condition of ensuring the quality of a film layer, the design size is reduced as much as possible, the space is reduced, the overall design is further optimized, the long-time and large-area stable extraction of plasma is achieved through the design of the vacuum chamber 100 and the adjustment of an electromagnetic field, the service performance is excellent, through the adjustment of the magnetic field distribution condition of an arc source part, the stable service time of the arc source can reach about 15-, it is thus ensured that samples of length 1500m can be processed in an effective time at a processing speed of 1.5 m/min.
Specifically, the molecular pump flange interfaces 101 are respectively arranged on the outer shell of the vacuum chamber 100, and the number of the molecular pump flange interfaces 101 is eight, so that the external molecules can be rapidly conveyed into the vacuum chamber 100 through the arrangement of the molecular pump flange interfaces 101, and the external molecules can be processed and used.
Specifically, the number of the ion implantation flange interfaces 104 is two, the number of the magnetic filtration deposition flange interfaces 105 is six, large particles and neutral atoms generated by an arc source are filtered by setting the cooperation of the ion implantation flange interfaces 104 and the magnetic filtration deposition flange interfaces 105 through a magnetic filtration technology, so that a pure plasma beam without large particles is obtained, a high-quality coating can be deposited at a low matrix temperature, and a high-quality nano composite membrane is prepared by utilizing a magnetic filtration cathode vacuum arc; in combination with the ion implantation technique, atoms of the deposited film and atoms of the substrate can be mixed with each other to form a mixed layer on the interface, further improving the adhesion between the film and the substrate.
Specifically, ion implantation and plasma deposition equipment, including 4 and arc sources 12 of ion source, divide into two sets of ion sources and six sets of arc sources, through setting up ion implantation and plasma deposition equipment, with cooling shaft and ion source or arc source export one-to-one, in the preparation process, ion source or arc source all can the exclusive use, and the even deposit of film that every group structure all can guarantee the broad width to be 510mm for the film has even compact characteristics, improves the performance that the substrate combines.
Specifically, the use method of the device specifically comprises the following steps:
the method comprises the following steps: cleaning and drying the polyimide film;
step two: placing the sample on a winding shaft, adjusting the tension, keeping the film smooth and setting the running speed;
step three: the ion implantation device is used for implanting metal ions into the surface of the film by using a metal vapor ion source to form an implantation layer; wherein, the injection voltage of Ti or Ni is 15-45kV, the beam intensity is 1-10mA, and the injection device comprises: the injection dosage is 1X 1015-1X 1016/cm2, and the effective treatment length is 510 mm;
step four: the first magnetic filtration plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a transition layer: wherein the deposition thickness of Ti or Ni is about 50nm, and the effective processing length is 510 mm;
step five: the second magnetic filtration plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a metal layer: wherein the deposition thickness of Cu is about 50nm, and the effective processing length is 510 mm;
step six: the processed sample is taken out for standby, and the subsequent operation is required to be carried out as soon as possible.
By adopting the technical scheme: the preparation method is characterized by comprising the steps of arranging a molecular pump flange interface 101, a cooling shaft 103, an ion implantation flange interface 104, a magnetic filtration deposition flange interface 105, a film body 106, a vacuum chamber wall plane 201 and a winding and unwinding shaft 102 in cooperation, adopting a magnetic filtration cathode vacuum arc deposition technology which is an ion beam coating preparation method developed in recent years, filtering out large particles and neutral atoms generated by an arc source through the magnetic filtration technology to obtain a pure plasma beam without large particles, depositing a high-quality coating at a low substrate temperature, and preparing a high-quality nano composite film by utilizing a magnetic filtration cathode vacuum arc; the atoms of the deposited film and the atoms of the matrix can be mixed with each other by combining with the ion implantation technology, a mixed layer is formed on an interface, and the bonding performance between the film and the matrix is further improved; by combining the advantages of the plasma deposition system, the spatial layout of the vacuum chamber 100 is changed, the plasma density is improved, and the problem of wide-width magnetic filtration deposition uniformity is solved to a certain extent; meanwhile, the electromagnetic field distribution of the arc source is improved, the use efficiency and the service life of the arc source are improved, and the problem of long-distance deposition of the non-glue base material is solved; meanwhile, the system is integrated and optimized, the operation is integrated, the system abnormity is automatically monitored, and the stability of the system is greatly improved; the width can reach 510 mm: each outlet is composed of two arc sources or ion sources in the width direction, the positions of the two openings are adjusted, and the filtering is properly added, so that the arc spots are kept uniform in the width direction, and the one-time treatment length can reach 1500 m: by adjusting the magnetic field distribution of the arc source part, the stable use time of the arc source can reach about 15-20 hours, thereby ensuring that a sample with the length of 1500m can be processed in effective time under the condition of the processing speed of 1.5 m/min.
The working principle is as follows: when the device is used, the vacuum chamber 100 is butted with external equipment through a molecular pump flange interface 101, an ion injection flange interface 104 and a magnetic filtration deposition flange interface 105, then cooling shafts 103 correspond to ion sources or arc source outlets one to one, the ion sources or the arc sources can be independently used in the preparation process, each group of structures can ensure that a film with the width of 510mm is uniformly deposited, then a polyimide film is cleaned and dried, a sample is placed on a winding shaft, the tension is adjusted, the flatness of the film is kept, the running speed is set, and an ion injection device is used for injecting metal ions into the surface of the film by using a metal vapor ion source to form an injection layer; wherein, the injection voltage of Ti or Ni is 15-45kV, the beam intensity is 1-10mA, the injection device comprises: the injection dosage is 1X 1015-1X 1016/cm 2; effective treatment length 510mm, first magnetic filter plasma deposition apparatus utilizes the metal arc source to carry out metal ion deposition on the film surface, forms the transition layer: wherein the deposition thickness of Ti or Ni is about 50 nm; effective treatment length 510mm, the second magnetic filter plasma deposition device utilizes the metal arc source to carry out metal ion deposition on the film surface, forms the metal layer: wherein the deposition thickness of Cu is about 50 nm; the effective processing length is 510mm, the processed sample is taken out for standby, and the subsequent steps are required to be carried out as soon as possible, wherein the system automatically judges whether the whole system works normally through feedback signals, if a problem occurs, the position can be recorded, and the system automatically stops.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A production apparatus for a long-distance wide-width flexible non-stick substrate for COF substrates, comprising a vacuum chamber (100) surrounded by a vacuum chamber wall plane (201), characterized in that: the utility model discloses a vacuum chamber, including vacuum chamber (100), vacuum chamber wall plane (201), vacuum chamber (100) internally mounted have rotatable unreel axle (102a) and wind-up axle (102b), vacuum chamber (100) still are provided with a plurality of rotatable cooling shaft (103) between unreeling axle (102a) and wind-up axle (102b), the outside of vacuum chamber wall plane (201) is equipped with molecular pump flange interface (101), the outside of vacuum chamber wall plane (201) still is equipped with ion implantation flange interface (104) and magnetic filtration deposition flange interface (105), ion implantation flange interface (104) are connected with ion implantation device, and magnetic filtration deposition flange interface (105) are connected with magnetic filtration plasma deposition device, and molecular pump flange interface (101) are connected with the molecular pump.
2. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein: the number of the molecular pump flange interfaces (101) is eight.
3. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein: the number of the ion implantation flange interfaces (104) is two.
4. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein: the number of the magnetic filtering deposition flange interfaces (105) is six.
5. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein: the cooling shaft is arranged opposite to one or two of a molecular pump flange interface, an ion implantation flange interface (104) or a magnetic filtration deposition flange interface (105).
6. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein the unwinding shaft (102a) and the winding shaft (102b) are respectively disposed at both ends in the vacuum chamber (100).
7. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 1, wherein the ion implantation device or the magnetic filtration plasma deposition device can be activated individually or simultaneously.
8. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrate according to claim 1, wherein the magnetic filtering plasma deposition devices are respectively two groups, namely a first magnetic filtering plasma deposition device and a second magnetic filtering plasma deposition device.
9. The apparatus for preparing a long-distance wide-width flexible non-adhesive substrate for COF substrates according to claim 8, wherein: the use method of the equipment specifically comprises the following steps:
the method comprises the following steps: cleaning and drying a polyimide film roll sample;
step two: opening the vacuum chamber (100), placing the sample in the first step on an unreeling shaft, drawing one end of the sample to wrap a plurality of cooling shafts respectively and then fixing the sample on a reeling shaft, adjusting the tension, keeping the film smooth and setting the running speed;
step three: closing the vacuum chamber (100), vacuumizing, starting an ion implantation device, starting an ion implantation process, and performing metal ion implantation on the surface of the film by using a metal Ti or Ni vapor ion source to form a Ti or Ni implantation layer; wherein, the injection voltage of Ti or Ni is 15-45kV, the beam intensity is 1-10mA, the injection dose of the ion source is 1 x 1015-1 x 1016/cm2, and the effective processing length is 510 mm;
step four: the first magnetic filtering plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a Ti or Ni transition layer: wherein the deposition thickness of Ti or Ni is 50nm, and the effective processing length is 510 mm;
step five: the second magnetic filtration plasma deposition device utilizes a metal arc source to perform metal ion deposition on the surface of the film to form a metal layer of Cu: wherein the deposition thickness of Cu is about 50nm, and the effective processing length is 510 mm;
step six: the vacuum chamber (100) is opened and the processed sample is taken out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011281351.6A CN112271138A (en) | 2020-11-16 | 2020-11-16 | Preparation equipment for long-distance wide-width flexible glue-free base material for COF substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011281351.6A CN112271138A (en) | 2020-11-16 | 2020-11-16 | Preparation equipment for long-distance wide-width flexible glue-free base material for COF substrate |
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| CN112271138A true CN112271138A (en) | 2021-01-26 |
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| CN202011281351.6A Pending CN112271138A (en) | 2020-11-16 | 2020-11-16 | Preparation equipment for long-distance wide-width flexible glue-free base material for COF substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537749A (en) * | 2022-09-08 | 2022-12-30 | 核工业西南物理研究院 | Ion irradiation device for continuous artificial magnetic flux pinning preparation |
-
2020
- 2020-11-16 CN CN202011281351.6A patent/CN112271138A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537749A (en) * | 2022-09-08 | 2022-12-30 | 核工业西南物理研究院 | Ion irradiation device for continuous artificial magnetic flux pinning preparation |
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