CN112216602B - 一种用于锑化铟单晶片的抛光方法 - Google Patents
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Abstract
本发明公开了一种用于锑化铟单晶片的抛光方法。该抛光方法分成两步:先经过激光抛光,然后再进行化学机械抛光。由于采用两步抛光方法,省去了传统单晶片切割后、抛光前常用的研磨过程,提高了抛光效率。利用激光抛光所具有的非接触加工,低损伤加工的特性,使化学机械抛光前的单晶片表面已达到微米级抛光水准,且不存在研磨后残留的划痕,从而使之后化学机械抛光过程不需要达到很高的厚度去除量,大幅度缩短了化学机械抛光时间,激光抛光过程时间最低可缩短至10分钟,配合化学机械抛光,整体抛光时间可控制在30分钟以内。且通过化学机械抛光对锑化铟单晶片进行抛光后,晶片表面实现了全局平坦化,表面粗糙度Ra小于0.3nm。
Description
技术领域
本发明涉及半导体材料加工技术,尤其是涉及一种用于锑化铟单晶片的抛光方法。
背景技术
在Ⅲ-Ⅴ族半导体中,锑化铟具有最窄的禁带宽度,最高的电子迁移率,最小的电子有效质量和最大的电子磁矩,使其成为合格的红外探测材料,并在高速低功率场效应晶体管和超高速低功耗数字逻辑电路领域极具应用潜力。
锑化铟单晶在应用前需要经过切割将单晶规整为单晶片,再经过研磨去除单晶切割留下的痕迹,最后通过抛光使表面达到全局平坦化,达到使用要求。锑化铟单晶属于软脆材料,传统观的研磨过程易在晶片表面残留较深划痕,若未在抛光工序后除去,则会影响单晶片的使用性能,这在一定程度加大了抛光过程的厚度去除量,影响了加工效率。目前对锑化铟单晶片的抛光方法研究不多,应用半导体加工中常用的化学机械抛光(CMP)工艺,抛光后晶片质量不佳。因此需要对研磨、抛光过程进行通盘考虑,采用特定的抛光方法,以获得低表面粗糙度、低亚表面损伤的锑化铟单晶片。
发明内容
鉴于上述现有技术存在的问题,本发明提出了一种用于锑化铟单晶片的激光抛光及化学机械抛光相结合的两步抛光方法。应用该方法加工后锑化铟单晶片抛光效率得到提升,获得了表面损伤小、无表面凹凸不平情况及腐蚀坑,表面粗糙度低的晶片,加工后晶片的最终表面粗糙度值Ra小于0.3 nm。
本发明采取的技术方案是:一种用于锑化铟单晶片的抛光方法,其特征在于,所述抛光方法分成两步:先经过激光抛光,然后再进行化学机械抛光;具体步骤如下:
一、激光抛光:对切割后的锑化铟单晶片直接进行激光抛光
(1)、采用光学除蜡剂对切割后的锑化铟单晶片进行超声清洗,并用棉签蘸取丙酮,擦去晶片表面的其它颗粒沾污,完成激光抛光前的单晶片预处理过程。
(2)、采用波长为570nm-590nm的黄光半导体泵浦脉冲固体激光器对置于工作台上的锑化铟单晶片进行扫描抛光,并采用氮气进行保护,使切割后锑化铟单晶片表面突起的微管波峰部分升华,从而获得微米级平坦的表面;激光器的功率为100W,光斑直径为1mm,离焦量为12cm,电流强度为1A-10A,频率为90MHz-120MHz,脉宽为5fs-10fs。
(3)、采用横向移动激光束对样品进行多次扫描,每两次扫描的光斑重叠度为10%-30%,扫描速度为1mm/s-12mm/s;在整个锑化铟单晶片经过扫描后,结束激光抛光过程。
二、化学机械抛光
(1)、采用石蜡将锑化铟单晶片粘贴在陶瓷载盘上并用压片机压实。
(2)、待锑化铟单晶片与陶瓷盘整体粘结稳固后,用刀片刮去锑化铟单晶片边缘溢出的少部分石蜡,并用酒精将锑化铟单晶片表面残余的石蜡清理干净。
(3)、随后对锑化铟单晶片进行化学机械抛光,抛光液选用铝溶胶或硅溶胶与氨水或次氯酸钠按一定体积比例混合后的溶液;抛光液流量为15-20ml/min,抛光时间为10-20min。
(4)、化学机械抛光结束后将陶瓷载盘取下,迅速用去离子水冲洗后,进行后续的清洗过程。
本发明在所述的机械抛光过程中选择的抛光液为:1份铝溶胶或硅溶胶中加入5份至8份去离子水,再加入0.1份至0.5份氨水或次氯酸钠,混合均匀。
本发明应用的激光抛光技术是利用激光辐射与材料表面的光热耦作用,以蒸发、融化等形式为主去除材料,并伴有微小破碎和光化学机制去除材料,以非接触加工的方式获得低表面粗糙度和亚表面损伤的抛光表面。而化学机械抛光技术,是通过含有氧化剂的溶液与样品发生反应,将其表面软化,再通过抛光液中磨粒与样品表面的机械作用对材料进行去除,从而获得低表面粗糙度和亚表面损伤的抛光表面。
本发明所产生的有益效果是:由于采用由激光抛光和化学机械抛光组成的两步抛光方法,省去了传统半导体加工领域中在单晶片切割后、抛光前常用的研磨过程,提高了抛光效率。利用激光抛光所具有的非接触加工,低损伤加工的特性,使化学机械抛光前的单晶片表面已达到微米级抛光水准,且不存在研磨后残留的划痕,从而使之后化学机械抛光过程不需要达到很高的厚度去除量,大幅度缩短了化学机械抛光时间,激光抛光过程时间最低可缩短至10分钟,配合化学机械抛光,整体抛光时间可控制在30分钟以内。且通过化学机械抛光对锑化铟单晶片进行抛光后,晶片表面实现了全局平坦化,表面粗糙度Ra小于0.3nm。
具体实施方式
以下结合实施例对本分明作进一步说明。
实施例一:
1.激光抛光
将锑化铟切割片置于波长为589nm的半导体泵浦固体激光器的工作台上,调节离焦量为12mm进行抛光,具体参数如下:
激光器的功率为100W,光斑直径为1mm,电流强度2A,频率90MHz,脉宽6.2fs,光斑重叠度为15%,扫描速度为2mm/s。完成整个晶片扫描后,结束激光抛光过程,进入到化学机械抛光。
2.化学机械抛光
将激光抛光所得晶片清洗干净,粘贴在陶瓷盘上进行化学机械抛光,抛光液及相关参数如下:
抛光液:按体积比进行配制,其中硅溶胶:去离子水:氨水=1:5:0.25。
抛光参数:抛光采用合成革抛光垫,抛光压力为100g/cm2,转速为110 转/分钟,抛光液流量为15mL/min,抛光时间为10min。
抛光后,晶片表面平整无划痕,采用原子力显微镜对晶片表面10µm×10µm区域进行监测,表面粗糙度Ra为0.174nm。
实施例二:
1.激光抛光
将锑化铟切割片置于波长为589nm的半导体泵浦固体激光器的工作台上,调节离焦量为12mm进行抛光,具体参数如下:
激光器的功率为100W,光斑直径为1mm,电流强度5A,频率120MHz,脉宽8.9fs,光斑重叠度为30%,扫描速度为5mm/s。完成整个晶片扫描后,结束激光抛光过程,进入到化学机械抛光。
2.化学机械抛光
将激光抛光所得晶片清洗干净,粘贴在陶瓷盘上进行化学机械抛光,抛光液及相关参数如下:
抛光液:按体积比进行配制,其中铝溶胶:去离子水:次氯酸钠=1:7:0.4。
抛光参数:抛光采用合成革抛光垫,抛光压力为150g/cm2,转速为120转/分钟,抛光液流量为18mL/min,抛光时间为12min。
抛光后,晶片表面平整无划痕,采用原子力显微镜对晶片表面10µm×10µm区域进行监测,表面粗糙度Ra为0.212nm。
Claims (1)
1.一种用于锑化铟单晶片的抛光方法,其特征在于,所述抛光方法分成两步:先经过激光抛光,然后再进行化学机械抛光;具体步骤如下:
一、激光抛光:对切割后的锑化铟单晶片直接进行激光抛光
(1)、采用光学除蜡剂对切割后的锑化铟单晶片进行超声清洗,并用棉签蘸取丙酮,擦去晶片表面的其它颗粒沾污,完成激光抛光前的单晶片预处理过程;
(2)、采用波长为570nm-590nm的黄光半导体泵浦脉冲固体激光器对置于工作台上的锑化铟单晶片进行扫描抛光,并采用氮气进行保护,使切割后锑化铟单晶片表面突起的微管波峰部分升华,从而获得微米级平坦的表面;激光器的功率为100W,光斑直径为1mm,离焦量为12cm,电流强度为1A-10A,频率为90MHz-120MHz,脉宽为5fs-10fs;
(3)、采用横向移动激光束对样品进行多次扫描,每两次扫描的光斑重叠度为10%-30%,扫描速度为1mm/s-12mm/s;在整个锑化铟单晶片经过扫描后,结束激光抛光过程;
二、化学机械抛光
(1)、采用石蜡将锑化铟单晶片粘贴在陶瓷载盘上并用压片机压实;
(2)、待锑化铟单晶片与陶瓷盘整体粘结稳固后,用刀片刮去锑化铟单晶片边缘溢出的少部分石蜡,并用酒精将锑化铟单晶片表面残余的石蜡清理干净;
(3)、随后对锑化铟单晶片进行化学机械抛光,抛光液选用铝溶胶或硅溶胶与氨水或次氯酸钠按一定体积比例混合后的溶液;抛光液流量为15-20ml/min,抛光时间为10-20min;
(4)、化学机械抛光结束后将陶瓷载盘取下,迅速用去离子水冲洗后,进行后续的清洗过程;
在所述的机械抛光过程中选择的抛光液为:1份铝溶胶或硅溶胶中加入5份至8份去离子水,再加入0.1份至0.5份氨水或次氯酸钠,混合均匀。
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