CN112216602B - Polishing method for indium antimonide single crystal wafer - Google Patents
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- CN112216602B CN112216602B CN202011141093.1A CN202011141093A CN112216602B CN 112216602 B CN112216602 B CN 112216602B CN 202011141093 A CN202011141093 A CN 202011141093A CN 112216602 B CN112216602 B CN 112216602B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a polishing method for an indium antimonide single crystal wafer. The polishing method comprises two steps: firstly, laser polishing is carried out, and then, chemical mechanical polishing is carried out. Because the two-step polishing method is adopted, the grinding process commonly used after the traditional single crystal wafer is cut and before polishing is omitted, and the polishing efficiency is improved. By utilizing the characteristics of non-contact processing and low-damage processing of laser polishing, the surface of a single wafer before chemical mechanical polishing reaches a micron-level polishing level, and no scratch is left after grinding, so that the chemical mechanical polishing process does not need to reach a high thickness removal amount, the chemical mechanical polishing time is greatly shortened, the minimum time of the laser polishing process can be shortened to 10 minutes, and the overall polishing time can be controlled within 30 minutes by matching with the chemical mechanical polishing. And after the indium antimonide single crystal wafer is polished by chemical mechanical polishing, the global planarization of the surface of the wafer is realized, and the surface roughness Ra is less than 0.3 nm.
Description
Technical Field
The invention relates to a semiconductor material processing technology, in particular to a polishing method for an indium antimonide single crystal wafer.
Background
In III-V group semiconductors, indium antimonide has the narrowest forbidden bandwidth, the highest electron mobility, the smallest electron effective mass and the largest electron magnetic moment, so that the indium antimonide becomes a qualified infrared detection material and has great application potential in the fields of high-speed low-power field effect transistors and ultra-high-speed low-power digital logic circuits.
Before application, the indium antimonide single crystal needs to be cut to be structured into a single crystal wafer, traces left by the single crystal cutting are removed through grinding, and finally the surface is globally flattened through polishing to meet the use requirement. Indium antimonide single crystal belongs to soft and brittle materials, deep scratches are easy to remain on the surface of a wafer in the conventional grinding process, if the indium antimonide single crystal is not removed after a polishing procedure, the service performance of the single crystal wafer is affected, the thickness removal amount in the polishing process is increased to a certain extent, and the processing efficiency is affected. Currently, few researches are made on the polishing method of the indium antimonide single crystal wafer, and the quality of the polished wafer is poor by applying the Chemical Mechanical Polishing (CMP) process commonly used in semiconductor processing. Therefore, the grinding and polishing processes need to be considered in a general way, and a specific polishing method is adopted to obtain the indium antimonide single crystal wafer with low surface roughness and low subsurface damage.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a two-step polishing method for combining laser polishing and chemical mechanical polishing of an indium antimonide single crystal wafer. The polishing efficiency of the indium antimonide single crystal wafer processed by the method is improved, the wafer with small surface damage, no surface unevenness and corrosion pits and low surface roughness is obtained, and the final surface roughness value Ra of the processed wafer is less than 0.3 nm.
The technical scheme adopted by the invention is as follows: a polishing method for an indium antimonide single crystal wafer is characterized by comprising the following two steps: firstly, carrying out laser polishing, and then carrying out chemical mechanical polishing; the method comprises the following specific steps:
firstly, laser polishing: directly carrying out laser polishing on the cut indium antimonide single crystal wafer
(1) And ultrasonically cleaning the cut indium antimonide single crystal wafer by using an optical wax removing agent, dipping acetone by using a cotton swab, wiping off other particle stains on the surface of the wafer, and finishing the single crystal wafer pretreatment process before laser polishing.
(2) Scanning and polishing the indium antimonide single crystal wafer on a workbench by adopting a yellow semiconductor pump pulse solid laser with the wavelength of 570-590 nm, and protecting by adopting nitrogen gas to sublimate a protruding micro-tube wave crest part on the surface of the cut indium antimonide single crystal wafer so as to obtain a micron-sized flat surface; the power of the laser is 100W, the diameter of a light spot is 1mm, the defocusing amount is 12cm, the current intensity is 1A-10A, the frequency is 90MHz-120MHz, and the pulse width is 5fs-10 fs.
(3) Scanning the sample for multiple times by adopting a transversely moving laser beam, wherein the overlapping degree of light spots scanned every two times is 10% -30%, and the scanning speed is 1-12 mm/s; and finishing the laser polishing process after the whole indium antimonide single crystal wafer is scanned.
Second, chemical mechanical polishing
(1) And sticking the indium antimonide single crystal chip on a ceramic carrying disc by adopting paraffin and compacting by using a tablet press.
(2) After the indium antimonide single crystal chip and the ceramic disc are integrally bonded firmly, scraping off a small part of paraffin wax overflowing from the edge of the indium antimonide single crystal chip by using a blade, and cleaning up the residual paraffin wax on the surface of the indium antimonide single crystal chip by using alcohol.
(3) Then, carrying out chemical mechanical polishing on the indium antimonide single crystal wafer, wherein the polishing solution is a solution prepared by mixing aluminum sol or silica sol and ammonia water or sodium hypochlorite according to a certain volume ratio; the flow rate of the polishing solution is 15-20ml/min, and the polishing time is 10-20 min.
(4) And after the chemical mechanical polishing is finished, taking down the ceramic carrying disc, and carrying out subsequent cleaning process after the ceramic carrying disc is quickly washed by deionized water.
The polishing solution selected in the mechanical polishing process of the invention is as follows: adding 5 to 8 parts of deionized water into 1 part of aluminum sol or silica sol, adding 0.1 to 0.5 part of ammonia water or sodium hypochlorite, and uniformly mixing.
The laser polishing technology applied by the invention utilizes the photothermal coupling effect of laser radiation and the surface of the material, mainly removes the material in the forms of evaporation, melting and the like, and removes the material along with micro crushing and a photochemical mechanism, and obtains a polished surface with low surface roughness and subsurface damage in a non-contact processing mode. The chemical mechanical polishing technology is to react a solution containing an oxidizing agent with a sample to soften the surface of the sample, and then remove the material by the mechanical action of abrasive particles in a polishing solution and the surface of the sample, so as to obtain a polished surface with low surface roughness and subsurface damage.
The beneficial effects produced by the invention are as follows: because the two-step polishing method consisting of laser polishing and chemical mechanical polishing is adopted, the grinding process commonly used after the single crystal wafer is cut and before the single crystal wafer is polished in the traditional semiconductor processing field is saved, and the polishing efficiency is improved. By utilizing the characteristics of non-contact processing and low-damage processing of laser polishing, the surface of a single wafer before chemical mechanical polishing reaches a micron-level polishing level, and no scratch is left after grinding, so that the chemical mechanical polishing process does not need to reach a high thickness removal amount, the chemical mechanical polishing time is greatly shortened, the minimum time of the laser polishing process can be shortened to 10 minutes, and the overall polishing time can be controlled within 30 minutes by matching with the chemical mechanical polishing. And after the indium antimonide single crystal wafer is polished by chemical mechanical polishing, the global planarization of the surface of the wafer is realized, and the surface roughness Ra is less than 0.3 nm.
Detailed Description
The present invention will be further described with reference to the following examples.
The first embodiment is as follows:
1. laser polishing
Placing the indium antimonide cutting blade on a workbench of a semiconductor pump solid laser with the wavelength of 589nm, adjusting the defocusing amount to be 12mm for polishing, and specifically setting the following parameters:
the power of the laser is 100W, the diameter of a light spot is 1mm, the current intensity is 2A, the frequency is 90MHz, the pulse width is 6.2fs, the overlapping degree of the light spot is 15 percent, and the scanning speed is 2 mm/s. And finishing the laser polishing process after the whole wafer is scanned, and entering the chemical mechanical polishing.
2. Chemical mechanical polishing
Cleaning a wafer obtained by laser polishing, and pasting the wafer on a ceramic disc for chemical mechanical polishing, wherein the polishing solution and related parameters are as follows:
polishing solution: preparing according to the volume ratio, wherein the weight ratio of silica sol: deionized water: ammonia = 1: 5: 0.25.
polishing parameters: the polishing adopts a synthetic leather polishing pad, and the polishing pressure is 100g/cm2The rotating speed is 110 revolutions per minute, the flow rate of the polishing solution is 15mL/min, and the polishing time is 10 min.
After polishing, the wafer surface is flat and has no scratches, an atomic force microscope is adopted to monitor a 10 mu m multiplied by 10 mu m area of the wafer surface, and the surface roughness Ra is 0.174 nm.
Example two:
1. laser polishing
Placing the indium antimonide cutting blade on a workbench of a semiconductor pump solid laser with the wavelength of 589nm, adjusting the defocusing amount to be 12mm for polishing, and specifically setting the following parameters:
the power of the laser is 100W, the diameter of a light spot is 1mm, the current intensity is 5A, the frequency is 120MHz, the pulse width is 8.9fs, the overlapping degree of the light spot is 30 percent, and the scanning speed is 5 mm/s. And finishing the laser polishing process after the whole wafer is scanned, and entering the chemical mechanical polishing.
2. Chemical mechanical polishing
Cleaning a wafer obtained by laser polishing, and adhering the wafer on a ceramic disc for chemical mechanical polishing, wherein the polishing solution and related parameters are as follows:
polishing solution: preparing according to the volume ratio, wherein the weight ratio of the aluminum sol: deionized water: sodium hypochlorite = 1: 7: 0.4.
polishing parameters: the polishing adopts a synthetic leather polishing pad, and the polishing pressure is 150g/cm2The rotating speed is 120 revolutions per minute, the flow rate of the polishing solution is 18mL/min, and the polishing time is 12 min.
After polishing, the surface of the wafer is flat and has no scratch, and an atomic force microscope is adopted to monitor a 10 mu m multiplied by 10 mu m area of the surface of the wafer, wherein the surface roughness Ra is 0.212 nm.
Claims (1)
1. A polishing method for an indium antimonide single crystal wafer is characterized by comprising the following two steps: firstly, carrying out laser polishing, and then carrying out chemical mechanical polishing; the method comprises the following specific steps:
firstly, laser polishing: directly carrying out laser polishing on the cut indium antimonide single crystal wafer
(1) Ultrasonically cleaning the cut indium antimonide single crystal wafer by using an optical wax removing agent, dipping acetone by using a cotton swab, wiping off other particle stains on the surface of the wafer, and finishing the pretreatment process of the single crystal wafer before laser polishing;
(2) scanning and polishing the indium antimonide single crystal wafer on a workbench by adopting a yellow semiconductor pump pulse solid laser with the wavelength of 570-590 nm, and protecting by adopting nitrogen gas to sublimate a protruding micro-tube wave crest part on the surface of the cut indium antimonide single crystal wafer so as to obtain a micron-sized flat surface; the power of the laser is 100W, the diameter of a light spot is 1mm, the defocusing amount is 12cm, the current intensity is 1A-10A, the frequency is 90MHz-120MHz, and the pulse width is 5fs-10 fs;
(3) scanning the sample for multiple times by adopting a transversely moving laser beam, wherein the overlapping degree of light spots scanned every two times is 10-30%, and the scanning speed is 1-12 mm/s; after the whole indium antimonide single crystal wafer is scanned, the laser polishing process is finished;
second, chemical mechanical polishing
(1) Sticking the indium antimonide single crystal wafer on a ceramic carrying disc by adopting paraffin and compacting by using a tablet press;
(2) after the indium antimonide single crystal chip and the ceramic disc are integrally bonded firmly, scraping off a small part of paraffin wax overflowing from the edge of the indium antimonide single crystal chip by using a blade, and cleaning up the residual paraffin wax on the surface of the indium antimonide single crystal chip by using alcohol;
(3) then, carrying out chemical mechanical polishing on the indium antimonide single crystal wafer, wherein the polishing solution is a solution prepared by mixing aluminum sol or silica sol and ammonia water or sodium hypochlorite according to a certain volume ratio; the flow rate of the polishing solution is 15-20ml/min, and the polishing time is 10-20 min;
(4) after the chemical mechanical polishing is finished, taking down the ceramic carrying disc, quickly washing with deionized water, and then carrying out a subsequent cleaning process;
the polishing solution selected in the mechanical polishing process is as follows: adding 5 to 8 parts of deionized water into 1 part of aluminum sol or silica sol, adding 0.1 to 0.5 part of ammonia water or sodium hypochlorite, and uniformly mixing.
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| CN113967872A (en) * | 2021-09-16 | 2022-01-25 | 北京航空航天大学 | Laser-assisted polishing method for monocrystalline silicon wafer |
| CN115070619B (en) * | 2022-08-18 | 2023-08-22 | 苏州燎塬半导体有限公司 | Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method |
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| CN106601607B (en) * | 2016-12-16 | 2019-08-13 | 镓特半导体科技（上海）有限公司 | Laser assisted gallium nitride cmp method |
| US11685015B2 (en) * | 2019-01-28 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for performing chemical mechanical polishing |
| CN110314896A (en) * | 2019-03-21 | 2019-10-11 | 清华大学 | A kind of semiconductor substrate materials polishing method |
| CN110788739A (en) * | 2019-10-31 | 2020-02-14 | 云南北方昆物光电科技发展有限公司 | Polishing method of indium antimonide single crystal wafer |
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