CN112157327A - Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current - Google Patents
Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current Download PDFInfo
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- CN112157327A CN112157327A CN202011067392.5A CN202011067392A CN112157327A CN 112157327 A CN112157327 A CN 112157327A CN 202011067392 A CN202011067392 A CN 202011067392A CN 112157327 A CN112157327 A CN 112157327A
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- copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention relates to a method for rapidly preparing high-temperature-resistant packaging Cu by adopting a current-assisted welding mode3Sn/copper foam composite joints. The method is characterized in that: the composite soldering lug is prepared from the foam copper and the pure tin, and a high-temperature-resistant and reliable composite joint is quickly generated by using a current-assisted welding method to realize permanent connection. In the invention, the joule heat generated by the current promotes the growth rate of the compound, shortens the welding time and improves the production efficiency. The rapidly generated composite welding joint not only has better electrical conductivity and thermal conductivity, but also has mechanical property and fatigue resistanceThe high-temperature-resistant packaging material is good in performance, can meet the high-temperature-resistant requirement of third-generation semiconductor packaging, and can be widely applied to actual production.
Description
Technical Field
The invention relates to semiconductor device packaging interconnection, in particular to a method for rapidly preparing high-temperature-resistant packaging Cu by adopting a current-assisted welding mode3Sn/copper foam composite joints.
Background
At present, with the continuous development of power electronic technology, the third generation semiconductor is widely applied. The third generation semiconductor is not only widely applied to automobiles, military, electric locomotives and the like, but also applied under extreme conditions of aerospace, petroleum exploration, nuclear energy development and the like. In practical application, the working temperature condition of the sensor is harsh and is often-100-600 ℃. Therefore, the sensor operates in such a wide temperature range, and not only strict requirements are placed on third-generation semiconductor materials such as SiC, but also higher requirements are placed on high-temperature-resistant packaging. These requirements refer to the problem of heat migration after heating of the interfacial reaction solder material, thermal matching between the substrate and the interconnect material and between the chip and the substrate. Therefore, exploring solder materials that can be used in third generation semiconductor power device packages is critical to the reliability of the device connections. Currently, there are three main methods for researching connection between the chip and the substrate of the third-generation semiconductor device: high temperature brazing, nano sintering and transient liquid phase bonding to form a full compound (TLP) respectively. The working temperature of the brazing filler metal popular in the market is about 300 ℃, the brazing filler metal working at 500 ℃ or higher temperature is very little, and the representative Au-based brazing filler metal has higher strength, better corrosion resistance and excellent heat conduction and electric conductivity. However, the Au-based solder has high hardness, poor processability and high price, and is not suitable for large-scale popularization and application. Although the nano sintering technology meets the packaging requirements of the third-generation semiconductor devices to a certain extent, the agglomeration phenomenon of nano particles, a large number of cavities in a sintering structure and the electromigration problem are problems which are urgently needed to be solved by adopting the method. The principle of transient liquid phase bonding to form a total compound (TLP) is that a low-melting-point metal is melted to form a liquid phase which reacts with a high-melting-point metal to form a high-melting-point bonding layer, so that metallurgical bonding is realized, and low-temperature bonding and high-temperature service of a power device are realized, so that the TLP is an ideal method for three-generation semiconductor packaging.
The current TLP technology for the third generation semiconductor packaging is mainly based on the study of Cu — Sn all-compound junctions. The Cu-Sn compound at room temperature has Cu6Sn5And Cu3And Sn. Cu3The resistivity, the thermal conductivity and the Young's modulus of Sn are all superior to those of Cu6Sn5. But Cu3Sn has the problems of large brittleness and poor electrical and thermal conductivity, and forms full Cu3The long residence time required for Sn joints at high temperatures limits their use in third generation semiconductor package interconnects. Thus, Cu3The Sn/foam copper composite joint is more suitable for connecting a third-generation semiconductor device chip and a substrate, and the brazing joint has a great application prospect in high-temperature packaging of a power device.
The invention takes the foam copper as the framework and the tin as the filling material to manufacture the composite soldering lug, and provides the efficient preparation of Cu under the current-assisted hot-pressing welding3A new method of Sn/foam copper composite joint. By the action of current-assisted welding, Cu generated in situ is quickly obtained3Sn and the residual foam copper after reaction are compounded to form a micro-welding point, and the compounding of the Sn and the foam copper can overcome the defect of pure Cu3Brittleness of Sn. In addition to this, Cu obtained by means of current-assisted welding3The mechanical strength of the Sn/foam copper composite joint is obviously higher than that of Cu3Mechanical strength of Sn-based solder joint, temperature rise caused by Joule heat accelerates interfacial reaction between liquid Sn/solid Cu, and applied current causes local sharp temperature rise and accelerates Cu3And (4) growing the Sn compound. Stable Cu with high temp. resistance is obtained in very short time and under low pressure3An Sn-based solder joint. The three-dimensional skeleton structure of the copper foam enables the specific surface area of the copper foam to be large, namely, the specific surface area of the copper foam is larger under the copper with unit mass, the reaction contact area can be enlarged, and the reaction distance can be shortened, so that the reaction rate is accelerated, and the copper foam can also play a role in improving the electrical conductivity and the thermal conductivity.
Disclosure of Invention
The invention aims to solve the problem of Cu3Sn has large brittleness and poor electrical conductivity and heat conductivity when being in service in high-temperature environment, and a Cu for high-temperature resistant packaging is quickly prepared by adopting a current-assisted welding mode3The Sn/foam copper composite joint has the advantages of simple current-assisted welding operation, shortened welding time, improved working efficiency, low cost, capability of meeting the actual production and use requirements, and wide application in third-generation semiconductor packaging.
The solution of the problem of the invention is: the composite soldering lug is made of foam copper and pure tin and is welded by current assistanceIn a way that the compound Cu with higher temperature resistance is obtained more quickly3Sn and the residual foam Cu after reaction are compounded to form a micro welding spot, and the obtained joint is Cu3Sn/copper foam composite joints. Compared with the prior art, the composite soldering lug has better electrical conductivity, thermal conductivity, mechanical property, high-temperature creep resistance and electromigration resistance. The three-dimensional skeleton structure of the copper foam enables the specific surface area of the copper foam to be large, namely, the specific surface area of the copper foam is larger under the copper with unit mass, the reaction contact area can be enlarged, and the reaction distance can be shortened, so that the reaction rate is accelerated, and the copper foam can also play a role in improving the electrical conductivity and the thermal conductivity.
The composite joint provided by the invention can be used for realizing reliable connection between an IGBT, an LED, a photovoltaic module and the like and a substrate, and the full IMC welding spot is expected to solve the problems of 3D packaging thermomigration, electromigration reliability and the like and realize the application of electronic products in high temperature and extreme environments.
Drawings
FIG. 1 is a schematic view of a power-on clamp.
Fig. 2 is a schematic view of composite tab welding.
FIG. 3 is an SEM microstructure of a composite weld after welding.
FIG. 4 is an EDX spectrum analysis of a composite weld after welding.
Detailed Description
The present invention will be described in further detail with reference to the following drawings and specific examples, but the present invention is not limited to the examples.
Method for rapidly preparing high-temperature-resistant packaging Cu in current-assisted welding mode3The Sn/foam copper composite joint specifically comprises the following steps.
(1) Preparing a composite soldering lug: removing stains, oil stains and oxides on the surface of the pure tin block and the foam copper (500ppi) by an ultrasonic cleaning method, and airing for later use; putting the pure tin block into a high-temperature-resistant crucible, and completely melting the pure tin block by heating, wherein the heating temperature is slightly higher than the melting point (232 ℃) of tin; the washed copper foam was compressed once from 1mm thickness to 0.13mm using a two-roll cold press; smearing the scaling powder on the foamy copper obtained after the primary compression, and then immersing the foamy copper into the obtained tin melt for 8s to form a composite structure soldering lug; the obtained soldering terminal with tin and foam copper composite structure is secondarily compressed to 100 mu m at 300 ℃, 600Mpa and 20s by a hot press, and is cut into soldering terminals with 2 multiplied by 2 mm.
(2) Design of the electrified clamp: taking two pure aluminum sheets with smooth surfaces and the thickness of 2mm, and cutting the aluminum sheets into shapes similar to those shown in figure 1, wherein the size of the upper half aluminum sheet is 10mm multiplied by 10mm, and the area of the lower half aluminum sheet is 2mm multiplied by 10 mm.
(3) Design of the power-on loop: removing stains, oil stains and oxides on the surface of the copper sheet by an ultrasonic cleaning method, shearing the copper sheet into 2 x 2mm, and airing for later use; placing the composite soldering lug obtained in the step (1) on a Cu substrate, and placing a chip on the composite soldering lug obtained in the step (1) to form a sandwich structure; and placing the positive electrode electrifying clamp on the upper layer of the chip, and fixedly contacting the negative electrode electrifying clamp with the lowest Cu substrate. The electrified clamp is connected with a direct current power supply to form a complete series circuit.
(4) Current-assisted hot-pressing: and (3) switching on a direct current power supply, adjusting constant current parameters to ensure that the series circuit obtained in the step (3) works normally, and welding the chip and the Cu substrate by using the prepared composite soldering lug in a current-assisted hot pressure welding mode at 300 ℃, 0.6Mpa and 1A, as shown in figure 2.
(5) And (4) grinding and polishing the sample in the step (4), and observing the welded microstructure by using a microscope, wherein the microstructure is shown in fig. 3 and 4.
The invention is described in detail in the above with reference to the accompanying drawings, but the description should not be construed as limiting the scope of the invention, which is defined by the appended claims, and any modification based on the claims is within the scope of the invention.
Claims (5)
1. Method for rapidly preparing high-temperature-resistant packaging Cu in current-assisted welding mode3The Sn/foam copper composite joint is characterized by mainly comprising the following steps:
preparing a composite soldering lug: removing stains, oil stains and oxides on the surface of the pure tin block and the foam copper (500ppi) by an ultrasonic cleaning method, and airing for later use; putting the pure tin block into a high-temperature-resistant crucible, and completely melting the pure tin block by heating, wherein the heating temperature is slightly higher than the melting point (232 ℃) of tin; the washed copper foam was compressed once from 1mm thickness to 0.13mm using a two-roll cold press; smearing the scaling powder on the foamy copper obtained after the primary compression, and then immersing the foamy copper into the obtained tin melt for 8s to form a composite structure soldering lug; secondarily compressing the obtained soldering lug with the tin and foam copper composite structure to 100 microns at 300 ℃ and 600Mpa by using a hot press, and shearing into soldering lugs with the size of 2 multiplied by 2 mm;
(b) design of the electrified clamp: taking two pure aluminum sheets with smooth surfaces, and cutting the aluminum sheets into the shape shown in figure 1, wherein the size of the upper half aluminum sheet is 10mm multiplied by 10mm, and the area of the lower half aluminum sheet is 8mm multiplied by 10 mm; the thickness of the obtained aluminum sheet is processed into 1mm by turning, so that the uniform thickness is ensured;
(c) design of the power-on loop: removing stains, oil stains and oxides on the surface of the copper sheet by an ultrasonic cleaning method, shearing the copper sheet into 2 x 2mm, and airing for later use; placing the composite soldering lug obtained in the step (a) on a DBC substrate, and placing a chip on the composite soldering lug obtained in the step (a) to form a sandwich structure; placing a positive electrode electrifying clamp on the upper layer of the chip, and fixedly contacting a negative electrode electrifying clamp with Cu of the DBC substrate on the lowest layer;
the electrified clamp is connected with a direct current power supply to form a complete series circuit;
(d) current-assisted hot-pressing: and (3) switching on a direct current power supply, adjusting constant current parameters to ensure that the series circuit obtained in the step (c) works normally, and welding the chip and the DBC substrate by using the prepared composite soldering lug in a current-assisted hot pressure welding mode at 300 ℃, 0.6Mpa and 1A.
2. The method for rapidly preparing the Cu for the high-temperature-resistant packaging in the current-assisted welding manner according to claim 13The Sn/foam copper composite joint is characterized in that: the specific steps of the step (a) are as follows:
(1) tin alloys include, but are not limited to, pure tin, tin alloys with 99.3% tin and 0.7% copper, and one or more of SAC-based solders;
(2) the foam copper material comprises one or more of pure copper, brass and nickel;
(3) the aperture of the copper foam is 5-500 ppi, the thickness is 0.1-40 mm, and the porosity is 50-98%;
(4) cleaning methods include, but are not limited to, ultrasonic cleaning, vibration cleaning, steam cleaning, and the like;
(5) the primary compression thickness of the foam copper is 0.1-1 mm;
(6) the primary compression mode of the copper foam includes but is not limited to a double-roller cold press, a hydraulic press and the like;
(7) the compression mode of the composite structure soldering lug includes, but is not limited to, modes such as a hot press, a vacuum hot pressing furnace and the like;
(8) the compression temperature of the soldering lug with the composite structure is 250-500 ℃;
(9) the compression pressure of the composite structure soldering lug is 50-600 MPa;
(10) the compressed thickness of the composite structure soldering lug is 10-300 mu m.
3. The method for rapidly preparing the Cu for the high-temperature-resistant packaging in the current-assisted welding manner according to claim 13The Sn/foam copper composite joint is characterized in that: the specific steps of the step (b) are as follows:
(1) the material of the electrifying clamp comprises but is not limited to pure metal and alloy with good electrical conductivity and thermal conductivity, such as aluminum, gold, silver, copper and the like;
(2) powered clamp aluminum sheet shapes include, but are not limited to, similar shapes;
(3) the machining mode of the thickness of the ventilation clamp aluminum sheet comprises but is not limited to turning;
(4) the size of the electrified clamp aluminum sheet is within 50mm multiplied by 50mm, and the thickness is between 0.1 mm and 10 mm.
4. The method for rapidly preparing the Cu for the high-temperature-resistant packaging in the current-assisted welding manner according to claim 13Sn/copper foam composite joint, its special featureCharacterized in that: the specific steps of the step (c) are as follows:
(1) the placement of the electrifying clamp on the upper layer of the chip is not limited to the positive clamp and the negative clamp;
(2) the power-on clamp is connected with a power supply, including but not limited to a direct current power supply and an alternating current power supply;
(3) ventilation circuits include, but are not limited to, series, parallel.
5. The method for rapidly preparing the Cu for the high-temperature-resistant packaging in the current-assisted welding manner according to claim 13The Sn/foam copper composite joint is characterized in that: the specific steps of the step (d) are as follows:
(1) the welding mode of the composite soldering lug and the Cu substrate comprises but is not limited to a hot-press welding constant-temperature heating platform, a reflow soldering mode, a wave soldering mode, a constant-temperature heating platform and the like;
(2) the auxiliary current for welding the composite soldering lug and the Cu substrate is between 0.1A and 60A;
(3) the welding temperature of the chip and the DBC substrate is 250-500 ℃;
(4) the welding pressure of the chip and the DBC substrate is 0.5-100 MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011067392.5A CN112157327A (en) | 2020-10-06 | 2020-10-06 | Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011067392.5A CN112157327A (en) | 2020-10-06 | 2020-10-06 | Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002060639A1 (en) * | 2001-02-02 | 2002-08-08 | Corus Aluminium Walzprodukte Gmbh | Brazing product |
| CN102699520A (en) * | 2012-06-21 | 2012-10-03 | 江苏科技大学 | Low-temperature rapid diffusion welding device and method based on pulse current auxiliary heating |
| CN106312218A (en) * | 2016-11-08 | 2017-01-11 | 哈尔滨宇航精创科技有限公司 | Pulse current auxiliary self-resistance heating device and method for partial quick brazing by utilizing same |
| CN107081495A (en) * | 2017-07-03 | 2017-08-22 | 长江师范学院 | A kind of method for welding of metal system |
| CN110315161A (en) * | 2019-07-10 | 2019-10-11 | 哈尔滨理工大学 | A kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint |
-
2020
- 2020-10-06 CN CN202011067392.5A patent/CN112157327A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002060639A1 (en) * | 2001-02-02 | 2002-08-08 | Corus Aluminium Walzprodukte Gmbh | Brazing product |
| CN102699520A (en) * | 2012-06-21 | 2012-10-03 | 江苏科技大学 | Low-temperature rapid diffusion welding device and method based on pulse current auxiliary heating |
| CN106312218A (en) * | 2016-11-08 | 2017-01-11 | 哈尔滨宇航精创科技有限公司 | Pulse current auxiliary self-resistance heating device and method for partial quick brazing by utilizing same |
| CN107081495A (en) * | 2017-07-03 | 2017-08-22 | 长江师范学院 | A kind of method for welding of metal system |
| CN110315161A (en) * | 2019-07-10 | 2019-10-11 | 哈尔滨理工大学 | A kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint |
Non-Patent Citations (2)
| Title |
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| 吴铭方等: "采用辅助脉冲电流液相扩散连接Ti(C,N)-Al_2O_3的接头形成行为及强度", 《焊接学报》 * |
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Application publication date: 20210101 |