CN112152084A - Lattice-matched silicon-based GaInNP vertical cavity surface emitting laser - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a lattice-matched silicon-based GaInNP vertical cavity surface emitting laser, which relates to the technical field of semiconductor lasers and comprises a Si substrate, wherein the Si substrate is an n-type Si single wafer, an n-type GaNP buffer layer, an n-type DBR structure layer, a GaNP/GaInNP/GaNP multi-quantum well active region and a p-type DBR structure layer are sequentially arranged on the upper surface of the Si substrate from top to bottom according to a layered superposition structure, a lower electrode is prepared on the lower surface of the Si substrate, and an upper electrode is prepared on the upper surface of the p-type DBR structure layer. The vertical cavity surface emitting laser with the lasing wavelength of 730-950 nm can be prepared based on the crystalline silicon substrate, the development of silicon photonic integration technology can be promoted, and the application of the vertical cavity surface emitting laser is accelerated.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a lattice-matched silicon-based GaInNP vertical cavity surface emitting laser.
Background
In recent years, the semiconductor laser industry has been greatly developed, and semiconductor Vertical Cavity Surface Emitting Lasers (VCSELs) have attracted much attention as development driving in the fields of communication, 3D sensing, AR/VR, and the like. The VCSEL with the lasing wavelength of 808nm can be applied to the fields of laser welding, cutting, medical treatment, military and the like, the VCSEL with the lasing wavelength of 850nm can be widely applied to high-speed optical fiber communication and short-distance data communication, the VCSEL with the lasing wavelength of 940nm can be applied to 3D sensing, the functions of face recognition and the like are achieved, the VCSEL is applied to the field of mobile phones at present, and the market prospect is very good.
However, most of the VCSEL materials are made of GaAs substrates, and the technology for bonding the VCSEL materials to a crystalline silicon integrated circuit is complex in the application process. If a VCSEL material based on a crystalline silicon substrate can be developed, the development of a silicon photon technology can be greatly promoted, so that the semiconductor laser technology can be rapidly applied to a crystalline silicon integrated circuit. The key technology of the semiconductor laser in the material preparation process is to improve the crystal quality of the material, and the important premise for improving the crystal quality is to keep the lattice matching of the material and the substrate. The lattice constants of the semiconductor compounds GaP, AlP and Si are very close, and researchers have found that after about 2% of N atoms are doped into GaP and AlP materials to form the materials gapp and AlNP, the lattice constants are perfectly matched to the crystalline silicon substrate (w. Shan, w. Walukiewicz, k.m. Yu, et al, Applied Physics Letters 76 (22), 3251-materials 3253 (2000)). Meanwhile, researches show that if In atoms are doped into a GaInNP alloy to form a GaInNP quaternary alloy material, the material band gap can be continuously adjusted between 1.3-1.7 eV (the achievable range of the lasing wavelength is 730-950 nm) by changing the N component, and meanwhile, the material band gap can also keep lattice matching with a Si material (S, Almosni, C, Robert, T, Nguyen Thanh, et al, Journal of Applied Physics 113 (12), 123509 (2013)), and the material is very suitable for being combined with a crystalline silicon material to prepare a semiconductor laser.
Disclosure of Invention
The invention aims to provide a lattice-matched silicon-based GaInNP vertical cavity surface emitting laser to solve the technical problem.
In order to solve the technical problems, the invention adopts the following technical scheme: a lattice-matched silicon-based GaInNP vertical cavity surface emitting laser comprises a Si substrate and is characterized in that: the Si substrate is an n-type Si single wafer, an n-type GaNP buffer layer, an n-type DBR structure layer, a GaNP/GaInNP/GaNP multi-quantum well active region and a p-type DBR structure layer are sequentially arranged on the upper surface of the Si substrate from top to bottom according to a layered superposition structure, a lower electrode is arranged on the lower surface of the Si substrate, and an upper electrode is arranged on the upper surface of the p-type DBR structure layer.
Preferably, all material layer lattice constants of the n-type GaNP buffer layer, the n-type DBR structure layer, the GaNP/GaInNP/GaNP multi-quantum well active region and the p-type DBR structure layer are kept the same as the Si substrate.
Preferably, the n-type DBR structure layer is composed of multiple layers of n-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 20-30.
Preferably, the optical band gap of the GaInNP material in the GaNP/GaInNP/GaNP multi-quantum well active region is 1.3-1.7 eV, and the number of the quantum wells is 1-5.
Preferably, the p-type DBR structure layer is composed of p-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 15-25.
The invention has the beneficial effects that:
according to the invention, firstly, a monocrystalline Si substrate is utilized, the characteristics of compound materials such as GaNP, AlNP and GaInNP are combined, secondly, an n-type GaNP buffer layer, an n-type DBR structure layer, a GaNP/GaInNP/GaNP multi-quantum well active region and a p-type DBR structure layer are arranged on the upper surface of the Si substrate, finally, a vertical cavity surface emitting laser with the lasing wavelength of 730-950 nm can be obtained, and finally, the lattice-matched silicon-based GaInNP vertical cavity surface emitting laser can be rapidly integrated with a silicon-based microelectronic device, the development of a silicon photon integration technology is promoted, and the popularization and application of the vertical cavity surface emitting laser are accelerated.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Reference numerals: 1. an upper electrode; 2. a p-type DBR structure layer; 3. a GaNP/GaInNP/GaNP multi-quantum well active region; 4. an n-type DBR structure layer; 5. an n-type GaNP buffer layer; 6. a Si substrate; 7. and a lower electrode.
Detailed Description
In order to make the technical means, the original characteristics, the achieved purposes and the effects of the invention easily understood, the invention is further described below with reference to the specific embodiments and the attached drawings, but the following embodiments are only the preferred embodiments of the invention, and not all embodiments. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative efforts belong to the protection scope of the present invention.
Specific embodiments of the present invention are described below with reference to the accompanying drawings.
Example 1
As shown in fig. 1, a lattice-matched silicon-based gainp vertical cavity surface emitting laser includes a Si substrate 6, the Si substrate 6 is an n-type Si single crystal wafer, an n-type GaNP buffer layer 5, an n-type DBR structure layer 4, a GaNP/gainp/GaNP multiple quantum well active region 3, and a p-type DBR structure layer 2 are sequentially disposed on an upper surface of the Si substrate 6 from top to bottom according to a layered stack structure, a lower electrode 7 is disposed on a lower surface of the Si substrate 6, an upper electrode 1 is disposed on an upper surface of the p-type DBR structure layer 2, the n-type GaNP buffer layer 5, the n-type DBR structure layer 4, the GaNP/gainp multiple quantum well active region 3, and the p-type DBR structure layer 2 all have the same material layer lattice constant as the Si substrate 6, the n-type DBR structure layer 4 is composed of multiple layers of n-type doped GaNP/AlNP, the GaNP/alinp/gainp are 20-30 pairs, and the GaNP/gainp/innp/multi quantum well active region 3 has a bandgap 1 eV 1 The number of the quantum wells is 1-5, the p-type DBR structure layer 2 is composed of p-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 15-25.
A preparation method of a lattice-matched silicon-based GaInNP vertical cavity surface emitting laser comprises the following steps:
s1, selecting a 4-inch n-type single crystal Si sheet as a substrate, and growing an n-type GaNP buffer layer 5 on the upper surface of a Si substrate 6 by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, wherein the thickness of the n-type GaNP buffer layer is 500 nm;
s2, growing an n-type DBR structure layer 4 on the n-type GaNP buffer layer 5 by adopting an MOCVD technology, wherein the DBR material combination is n-type doped GaNP/AlNP, and the logarithm is 30 pairs;
s3, growing a GaNP/GaInNP/GaNP multi-quantum well active region 3 on the n-type DBR structural layer 4 by adopting an MOCVD technology, wherein the number of quantum wells is 3;
s4, growing a p-type DBR structure layer 2 on the active region by adopting an MOCVD technology, wherein the DBR material combination is p-type doped GaNP/AlNP, and the logarithm is 25 pairs;
and S5, preparing electrodes on the upper surface and the lower surface of the epitaxial material sheet by adopting a metal evaporation and photoetching method, and forming ohmic contact by adopting an annealing method.
The working principle is as follows: according to the invention, by utilizing the single crystal Si substrate 6 and combining the self characteristics of compound materials such as GaNP, AlNP and GaInNP, an n-type GaNP buffer layer 5, an n-type DBR structure layer 4, a GaNP/GaInNP/GaNP multi-quantum well active region 3 and a p-type DBR structure layer 2 are arranged on the upper surface of the Si substrate 6, and finally, the vertical cavity surface emitting laser with the lasing wavelength of 730-950 nm can be obtained. The lattice-matched silicon-based GaInNP vertical cavity surface emitting laser can be rapidly integrated with a silicon-based microelectronic device, and the development of a silicon photonic integration technology and the application of the vertical cavity surface emitting laser are promoted. In a word, the semiconductor vertical cavity surface emitting laser can be prepared on the basis of the crystalline silicon substrate widely applied to the integrated circuit, has high application value and is worthy of popularization.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (5)
1. A lattice matched silicon based gainp vertical cavity surface emitting laser comprising a Si substrate (6), characterised in that: the Si substrate (6) is an n-type Si single crystal wafer, an n-type GaNP buffer layer (5), an n-type DBR structure layer (4), a GaNP/GaInNP/GaNP multi-quantum well active region (3) and a p-type DBR structure layer (2) are sequentially arranged on the upper surface of the Si substrate (6) from top to bottom according to a layered superposition structure, a lower electrode (7) is prepared on the lower surface of the Si substrate (6), and an upper electrode (1) is prepared on the upper surface of the p-type DBR structure layer (2).
2. The lattice-matched silicon-based gainp vertical cavity surface emitting laser of claim 1, wherein: the lattice constants of all material layers of the n-type GaNP buffer layer (5), the n-type DBR structure layer (4), the GaNP/GaInNP/GaNP multi-quantum well active region (3) and the p-type DBR structure layer (2) are kept the same as that of the Si substrate (6).
3. The lattice-matched silicon-based gainp vertical cavity surface emitting laser of claim 1, wherein: the n-type DBR structure layer (4) is composed of multiple layers of n-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 20-30.
4. The lattice-matched silicon-based gainp vertical cavity surface emitting laser of claim 1, wherein: the optical band gap of the GaInNP material in the GaNP/GaInNP/GaNP multi-quantum well active region (3) is 1.3-1.7 eV, and the number of quantum wells is 1-5.
5. The lattice-matched silicon-based gainp vertical cavity surface emitting laser of claim 1, wherein: the p-type DBR structure layer (2) is composed of p-type doped GaNP/AlNP, and the number of pairs of GaNP/AlNP is 15-25.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690732A (en) * | 2021-08-26 | 2021-11-23 | 深圳市中科芯辰科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN113725731A (en) * | 2021-09-02 | 2021-11-30 | 深圳市中科芯辰科技有限公司 | Dual-wavelength vertical cavity surface emitting laser and preparation method thereof |
| CN113764969A (en) * | 2021-09-08 | 2021-12-07 | 深圳市中科芯辰科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN114024210A (en) * | 2021-11-05 | 2022-02-08 | 电子科技大学中山学院 | Silicon-based vertical cavity surface emitting laser |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
| JPH08195522A (en) * | 1994-11-16 | 1996-07-30 | Hitachi Ltd | Semiconductor laser |
| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
| US20120033699A1 (en) * | 2010-08-06 | 2012-02-09 | Canon Kabushiki Kaisha | Surface-emitting laser, surface-emitting laser array, display apparatus including the surface-emitting laser array as a light source, printer head, and printer |
| CN102611000A (en) * | 2012-03-23 | 2012-07-25 | 中国科学院长春光学精密机械与物理研究所 | High-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
| CN108233176A (en) * | 2018-01-28 | 2018-06-29 | 海南师范大学 | A kind of electrical pumping GaN vertical-cavity surface emitting laser structures and preparation method thereof |
| CN110197993A (en) * | 2019-06-17 | 2019-09-03 | 威科赛乐微电子股份有限公司 | The VCSEL chip and its manufacturing method of high combined efficiency |
| CN110931593A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学中山学院 | Lattice-matched silicon-based arsenic-free compound four-junction solar cell |
| CN210693015U (en) * | 2019-12-02 | 2020-06-05 | 中山德华芯片技术有限公司 | Long wavelength GaInNAs/InGaAs composite quantum dot vertical cavity surface emitting laser |
-
2020
- 2020-09-27 CN CN202011033152.3A patent/CN112152084A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06334168A (en) * | 1993-03-26 | 1994-12-02 | Hitachi Ltd | Semiconductor element |
| JPH08195522A (en) * | 1994-11-16 | 1996-07-30 | Hitachi Ltd | Semiconductor laser |
| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
| US20120033699A1 (en) * | 2010-08-06 | 2012-02-09 | Canon Kabushiki Kaisha | Surface-emitting laser, surface-emitting laser array, display apparatus including the surface-emitting laser array as a light source, printer head, and printer |
| CN102611000A (en) * | 2012-03-23 | 2012-07-25 | 中国科学院长春光学精密机械与物理研究所 | High-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution |
| CN104733545A (en) * | 2015-02-17 | 2015-06-24 | 天津大学 | RTD with emitter region In content gradual change collector region and high-In transition layers |
| CN108233176A (en) * | 2018-01-28 | 2018-06-29 | 海南师范大学 | A kind of electrical pumping GaN vertical-cavity surface emitting laser structures and preparation method thereof |
| CN110197993A (en) * | 2019-06-17 | 2019-09-03 | 威科赛乐微电子股份有限公司 | The VCSEL chip and its manufacturing method of high combined efficiency |
| CN110931593A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学中山学院 | Lattice-matched silicon-based arsenic-free compound four-junction solar cell |
| CN210693015U (en) * | 2019-12-02 | 2020-06-05 | 中山德华芯片技术有限公司 | Long wavelength GaInNAs/InGaAs composite quantum dot vertical cavity surface emitting laser |
Non-Patent Citations (2)
| Title |
|---|
| S. ALMOSNI 等: "Evaluation of InGaPN and GaAsPN materials attice-matched to Si for multi-junction solar cells", 《JOURNAL OF APPLIED PHYSICS》 * |
| S. ALMOSNI 等: "Evaluation of InGaPN and GaAsPN materials attice-matched to Si for multi-junction solar cells", 《JOURNAL OF APPLIED PHYSICS》, vol. 113, no. 12, 4 April 2013 (2013-04-04), pages 123509 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690732A (en) * | 2021-08-26 | 2021-11-23 | 深圳市中科芯辰科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN113690732B (en) * | 2021-08-26 | 2023-08-18 | 深圳市芯火之光科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN113725731A (en) * | 2021-09-02 | 2021-11-30 | 深圳市中科芯辰科技有限公司 | Dual-wavelength vertical cavity surface emitting laser and preparation method thereof |
| CN113725731B (en) * | 2021-09-02 | 2023-10-31 | 深圳市中科光芯半导体科技有限公司 | Dual-wavelength vertical cavity surface emitting laser and preparation method thereof |
| CN113764969A (en) * | 2021-09-08 | 2021-12-07 | 深圳市中科芯辰科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN113764969B (en) * | 2021-09-08 | 2023-10-31 | 深圳市中科光芯半导体科技有限公司 | Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof |
| CN114024210A (en) * | 2021-11-05 | 2022-02-08 | 电子科技大学中山学院 | Silicon-based vertical cavity surface emitting laser |
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