CN112151401A - Grain orientation control method based on semiconductor temperature control - Google Patents
Grain orientation control method based on semiconductor temperature control Download PDFInfo
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- CN112151401A CN112151401A CN202011084546.1A CN202011084546A CN112151401A CN 112151401 A CN112151401 A CN 112151401A CN 202011084546 A CN202011084546 A CN 202011084546A CN 112151401 A CN112151401 A CN 112151401A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/8393—Reshaping
- H01L2224/83935—Reshaping by heating means, e.g. reflowing
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
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Abstract
The invention discloses a grain orientation control method based on semiconductor temperature control, which comprises the following steps of connecting a first welding disc, a soldering tin joint, a part to be welded and a second welding disc through vacuum brazing welding before heating and remelting; loading power is supplied to the first bonding pad, and the soldering tin joint generates joule heat to be melted again after being electrified; loading power is supplied to the first semiconductor refrigeration module and the second semiconductor refrigeration module, so that the first semiconductor refrigeration module is attached to one surface of the first bonding pad for heating, the second semiconductor refrigeration module is attached to one surface of the second bonding pad for refrigeration, and a temperature gradient is formed in the cooling process of the soldering tin joint; according to the solidification device provided by the invention, the power supply is loaded on the first bonding pad and the second bonding pad, so that the current is applied to the soldering tin joint to realize joule heating remelting, the crystal grain orientation of the soldering tin joint is rearranged, and the power fatigue damage resistance of the IGBT high-power component is improved.
Description
Technical Field
The invention relates to the field of metal welding processes, in particular to a grain orientation control method and device based on semiconductor temperature control.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a Bipolar Junction Transistor (BJT) and an Insulated Gate field effect Transistor (MOS), and has the advantages of low driving power and low saturation voltage. The inner part of the chip comprises a plurality of layers of structural materials with different functions, the lower surface of the chip is connected with an insulating ceramic lining plate through a welding layer (primary welding) by adopting a soldering process, and the semiconductor chips are connected in parallel to improve the current carrying capacity; the upper surface of the chip is electrically interconnected by wire bonding (secondary welding). In the actual working process of the IGBT power electronic device, the IGBT power electronic device can not only fail due to factors such as thermal fatigue and shear fatigue, but also the fatigue problem is one of the key factors influencing the reliability of the device. Fatigue failure of an IGBT component can cause failure of a related high-power electronic device, and serious influence can be caused in the field with higher requirement on reliability of a control system. The particle motion direction of the soldering tin joint is scattered and uncontrollable in the welding and packaging process, so that the fatigue resistance reliability of the joint is low, and the service life of the circuit is greatly reduced.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a partitioned current drive remelting and semiconductor temperature control directional solidification device which can rearrange the crystal grain orientation of a soldering tin joint and improve the power fatigue damage resistance of a component.
In order to achieve the purpose of the invention, the partitioned current drive remelting and semiconductor temperature control directional solidification device comprises a first semiconductor refrigeration module, a second semiconductor refrigeration module, a first bonding pad, a second bonding pad and a soldering tin joint; the first semiconductor refrigeration module is in contact with the upper surface of the first bonding pad in an attaching manner, the second semiconductor refrigeration module is in contact with the lower surface of the second bonding pad in an attaching manner, and the first bonding pad and the second bonding pad are arranged oppositely; when the first bonding pad and the second bonding pad are loaded by a power supply, the soldering tin joint is resistive and is melted again after being electrically heated, and the soldering tin is in a flowing state; when a power supply is loaded, the first semiconductor refrigeration module is attached to one surface of the first bonding pad for heating; and when a power supply is loaded, the second semiconductor refrigeration module is attached to one surface of the second bonding pad for refrigeration, and a temperature gradient is formed in the cooling process of the soldering tin joint.
According to the solidification device provided by the invention, the power supply is loaded on the first bonding pad and the second bonding pad, so that the current is applied to the soldering tin joint to realize joule heating remelting, and then the one-dimensional temperature gradient of the soldering tin joint in the solidification process is realized through the first semiconductor refrigeration module and the second semiconductor refrigeration module, so that the crystal grain orientation of the soldering tin joint is rearranged, and the power fatigue damage resistance of the IGBT high-power component is improved.
Furthermore, the first semiconductor refrigeration module comprises a first semiconductor refrigeration sub-module A and a first semiconductor refrigeration sub-module B, and both the first semiconductor refrigeration sub-module A and the first semiconductor refrigeration sub-module B comprise first semiconductor refrigeration pieces.
Further, the first semiconductor refrigeration sub-module a and the first semiconductor refrigeration sub-module B further include a first cooling cavity, and the first semiconductor refrigeration sheet and the first cooling cavity are stacked; the first semiconductor refrigeration piece and the first cooling cavity are electrically isolated by a first cover plate and are subjected to heat transfer.
Furthermore, first cooling chamber includes snakelike flow tube and is used for sealing the seal groove of snakelike flow tube, cooling water entry and cooling water export have been seted up respectively to the both ends of snakelike flow tube.
Furthermore, the contact surface of the first cooling cavity and the first cover plate is coated with heat-conducting silicone grease, so that the heat conductivity is improved.
Further, the first semiconductor refrigeration sub-module a and the first semiconductor refrigeration sub-module B are independently loaded with power, and the power can be loaded only on the first semiconductor refrigeration sub-module a, only on the first semiconductor refrigeration sub-module B, or simultaneously loaded on the first semiconductor refrigeration sub-module a and the first semiconductor refrigeration sub-module B.
Further, the second semiconductor refrigeration module comprises a second semiconductor refrigeration sub-module a and a second semiconductor refrigeration sub-module B, and both the second semiconductor refrigeration sub-module a and the second semiconductor refrigeration sub-module B comprise second semiconductor refrigeration pieces.
Further, the second semiconductor refrigeration sub-module a and the second semiconductor refrigeration sub-module B further include a second cooling cavity, and the second semiconductor refrigeration pieces and the second cooling cavity are stacked; the second semiconductor refrigerating sheet and the second cooling cavity are electrically isolated by a second cover plate and perform heat transfer.
Furthermore, the second cooling chamber includes snakelike flow tube and is used for sealing the seal groove of snakelike flow tube, cooling water entry and cooling water export have been seted up respectively to the both ends of snakelike flow tube.
Furthermore, the contact surface of the second cooling cavity and the second cover plate is coated with heat-conducting silicone grease.
Further, the second semiconductor refrigeration sub-module a and the second semiconductor refrigeration sub-module B are independently loaded with power supplies, and the power supplies can be loaded only on the second semiconductor refrigeration sub-module a, only on the second semiconductor refrigeration sub-module B, or simultaneously loaded on the second semiconductor refrigeration sub-module a and the second semiconductor refrigeration sub-module B.
Further, the apparatus provided by the present invention further includes a power supply system, and power output by the power supply system is loaded on the first pad and the second pad on one hand, and is loaded on the first semiconductor cooling module and the second semiconductor cooling module on the other hand.
Further, the power supply system includes:
the upper computer is used for man-machine interaction;
the single chip microcomputer is in communication connection with the upper computer, outputs a control signal according to a received control instruction sent by the upper computer, and uploads received data to the upper computer;
a heating remelting power supply, wherein the positive electrode and the negative electrode are respectively and electrically connected with the first bonding pad and the second bonding pad;
the relay is connected between the signal output end of the single chip microcomputer and the heating remelting power supply in series, and is conducted when the single chip microcomputer outputs a control signal, so that the control signal output by the single chip microcomputer is loaded on the heating remelting power supply, and the heating remelting power supply output power supply is loaded on the first bonding pad and the second bonding pad;
and the digital-to-analog converter is connected with the signal output end of the singlechip and is used for converting the digital signal output by the singlechip into an analog signal and respectively loading the analog signal on the first semiconductor refrigeration module and the second semiconductor refrigeration module.
Furthermore, the power supply system also comprises a temperature acquisition device in communication connection with the single chip microcomputer, wherein the temperature acquisition device is used for acquiring the temperature between the first bonding pad and the second bonding pad in the remelting process and uploading the temperature to the upper computer through the single chip microcomputer; and inputting a control instruction to the singlechip through the upper computer according to the uploaded temperature data, so that the relay is cut off, and simultaneously, the singlechip outputs a signal which passes through the digital-to-analog converter and then is loaded on the first semiconductor refrigeration module and the second semiconductor refrigeration module, so that the first semiconductor refrigeration module is attached to one surface of the first bonding pad for heating, and the second semiconductor refrigeration module is attached to one surface of the second bonding pad for refrigeration.
Furthermore, the device provided by the invention also comprises a cooling water circulation machine in communication connection with the upper computer, and the flow rate of cooling water of the cooling water circulation machine is controlled by the upper computer.
A second objective of the present invention is to provide a method for controlling grain orientation based on semiconductor temperature control, which comprises the following steps:
step S1: the first welding disc, the soldering tin joint, the part to be welded and the second welding disc are welded and connected through vacuum brazing before heating and remelting;
step S2: loading power is supplied to the first bonding pad, and the soldering tin joint generates joule heat to be melted again after being electrified;
step S3: after a certain time, a power supply is loaded on the first semiconductor refrigeration module and the second semiconductor refrigeration module, so that the first semiconductor refrigeration module is attached to one surface of the first bonding pad for heating, the second semiconductor refrigeration module is attached to one surface of the second bonding pad for refrigeration, and a temperature gradient is formed in the cooling process of the soldering tin joint.
Further, the vacuum brazing comprises the following steps:
step S11: etching the soldering tin material with 10% NaOH solution for 10min, keeping the temperature of the solution at 40-60 ℃, and then etching in nitric acid and hydrofluoric acid solution for 5 min;
step S12: and (4) placing the soldering tin material processed in the step (S11) at a welding point among the first welding plate, the soldering tin joint, the part to be welded and the second welding plate, placing the soldering tin material in a vacuum brazing furnace after assembly, providing a certain external pressure, and starting to heat to the brazing temperature for brazing when the vacuum in the brazing furnace is pumped to be below 6 x 10^ (-3) Pa.
The beneficial effects of the invention include:
1) joule heating remelting is achieved by applying current to the soldering tin joint, one-dimensional temperature gradient of the soldering tin joint in the solidification process is achieved through the first semiconductor refrigeration module and the second semiconductor refrigeration module, the grain orientation of the soldering tin joint is rearranged, and the power fatigue damage resistance of components is improved.
2) The first semiconductor refrigeration module and the second semiconductor refrigeration module are independently controlled, so that the independent controllability of the device is improved.
3) The cooling cavity can be used for radiating the hot end, when the cold end of the semiconductor refrigeration module can not meet the refrigeration requirement, cooling water can be introduced into the cooling cavity of the hot end, and the principle of the semiconductor refrigeration piece is that heat of the cold end is conducted to the hot end after the semiconductor refrigeration piece is electrified, so that the temperature of the cold end is further reduced after the hot end is cooled by the cooling cavity, the temperature gradient can be further enlarged, and the solidification is accelerated;
4) the single chip microcomputer is used as a control module, the temperature field data collected by the temperature collecting device in real time are combined, the first semiconductor refrigeration module and the second semiconductor refrigeration module are controlled to work according to the temperature data, and PID closed-loop control of temperature gradient in the remelting process of the solder joint is achieved.
5) The semiconductor temperature control module used in the invention has small volume, the interval of temperature gradient can be controlled by adjusting the magnitude and direction of current loaded on the first semiconductor refrigeration module and the second semiconductor refrigeration module through the cooperation of the singlechip and the upper computer, and the control precision is high.
6) The upper computer also controls the cooling water circulation speed of the cooling water circulator, so that the temperature gradient of the device can meet the cooling solidification requirement.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic diagram of an overall structure of a zone-current-driven remelting and semiconductor temperature-controlled directional solidification apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first semiconductor refrigeration sub-module according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a second semiconductor refrigeration sub-module according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a cooling chamber according to an embodiment of the present invention;
in the drawings: 1-a first semiconductor refrigeration module, 11-a first semiconductor refrigeration sub-module A, 12-a first semiconductor refrigeration sub-module B, 111-a first semiconductor refrigeration piece, 112-a first cooling cavity, 113-a first cover plate, 2-a second semiconductor refrigeration module, 21-a second semiconductor refrigeration sub-module A, 22-a second semiconductor refrigeration sub-module B, 211-a second semiconductor refrigeration piece, 212-a second cooling cavity, 213-a second cover plate, 3-a first bonding pad, 4-a second bonding pad, 5-a soldering tin joint, 6-a part to be welded, 7-an upper computer, 8-a single chip microcomputer, 9-a heating remelting power supply, 10-a relay, 13-a temperature acquisition device, 14-a serpentine flow pipe and 15-a sealing groove.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the inventive arrangements can be practiced without one or more of the specific details, or with other methods. In other instances, well-known methods, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the invention.
Referring to fig. 1, the partitioned current-driven remelting and semiconductor temperature-controlled directional solidification device provided by the invention comprises a first semiconductor refrigeration module 1, a second semiconductor refrigeration module 2, a first bonding pad 3, a second bonding pad 4 and a soldering tin joint 5; the first semiconductor refrigeration module 1 is in contact with the upper surface of the first bonding pad 3 in an attaching mode, the second semiconductor refrigeration module 2 is in contact with the lower surface of the second bonding pad 4 in an attaching mode, the first bonding pad 3 and the second bonding pad 4 are oppositely arranged, and the soldering tin joint 5 is located between the first bonding pad 3 and the second bonding pad 4; when the first bonding pad 3 and the second bonding pad 4 are loaded by power, the soldering tin joint 5 is resistive and is melted again after being electrically heated, and the soldering tin is in a flowing state; when a power supply is loaded, the first semiconductor refrigeration module 1 is attached to one surface of the first bonding pad 3 for heating; when a power supply is applied to the second semiconductor refrigeration module 2, the second semiconductor refrigeration module is attached to one surface of the second bonding pad 4 for refrigeration, and a temperature gradient is formed in the cooling process of the solder joint 5.
The working principle of the device is as follows: the mode of joule heating remelting is adopted, so that the soldered joint after soldering is electrified to be remelted and solidified, and the method specifically comprises the following steps: the first bonding pad 3, the soldering tin joint 5, the to-be-welded part 6 and the second bonding pad 4 are connected by vacuum brazing welding before heating remelting; the loading power source is connected to the first bonding pad 3, a loop is formed between the first bonding pad 3 and the second bonding pad 4 through the soldering tin joint 5, the soldering tin joint 5 is resistive, joule heat is generated after the soldering tin joint 5 is electrified to melt the soldering tin joint again, when the soldering tin joint 5 is in a flowing state, power sources loaded on the first bonding pad 3 and the second bonding pad 4 are cut off, power sources are simultaneously loaded to the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2, the first semiconductor refrigeration module 1 is attached to one surface of the first bonding pad 3 to heat, the second semiconductor refrigeration module 2 is attached to one surface of the second bonding pad 4 to refrigerate, a temperature gradient is formed in the cooling process of the soldering tin joint 5, and melted soldering tin is cooled and solidified again.
The first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 herein have the following structures:
the first semiconductor refrigeration module 1 comprises a first semiconductor refrigeration sub-module a11 and a first semiconductor refrigeration sub-module B12, and both the first semiconductor refrigeration sub-module a11 and the first semiconductor refrigeration sub-module B12 comprise a first semiconductor refrigeration chip 111.
Where power is independently applied to first semiconductor refrigeration sub-module A11 and first semiconductor refrigeration sub-module B12, power may be applied to only first semiconductor refrigeration sub-module A11, only first semiconductor refrigeration sub-module B12, or both first semiconductor refrigeration sub-module A11 and first semiconductor refrigeration sub-module B12.
The second semiconductor refrigeration module 2 comprises a second semiconductor refrigeration sub-module A21 and a second semiconductor refrigeration sub-module B22, and the second semiconductor refrigeration sub-module A21 and the second semiconductor refrigeration sub-module B22 both comprise a second semiconductor refrigeration piece 221.
Where power is independently applied to second semiconductor refrigeration sub-module a21 and second semiconductor refrigeration sub-module B22, power may be applied to only second semiconductor refrigeration sub-module a21, only second semiconductor refrigeration sub-module B22, or both second semiconductor refrigeration sub-module a21 and second semiconductor refrigeration sub-module B22.
The principle that the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 form the temperature gradient is that a semiconductor refrigeration piece is utilized, the semiconductor refrigeration piece is a cooling device composed of semiconductors, and based on the Peltier effect of semiconductor materials, when an N-type semiconductor and a P-type semiconductor are connected in series to form a circuit and direct current is conducted, heat can be absorbed and released at two ends of a couple respectively, and the purpose of temperature control is achieved. The peltier effect is reversible, and when the direction of current is changed, the heat releasing and absorbing couple is changed, and the absorbed and released heat is proportional to the intensity of current. Compared with other refrigerating and heating devices, the semiconductor refrigerating plate has higher reliability without moving parts. Of course, other cooling and heating devices may be substituted for the semiconductor cooling fins herein, as long as the reflowed solder joints are cooled and solidified.
To enable lower temperatures to be achieved, first semiconductor refrigeration sub-module a11 and first semiconductor refrigeration sub-module B12 herein further include a first cooling cavity 112, and second semiconductor refrigeration sub-module a21 and second semiconductor refrigeration sub-module B22 further include a second cooling cavity 212.
As shown in fig. 2, the first semiconductor cooling plate 111 is stacked with the first cooling chamber 112; the first semiconductor cooling plate 111 and the first cooling chamber 112 are electrically isolated and heat-transferred by the first cover plate 113.
In order to ensure the heat transfer performance, a heat conductive silicone grease is coated on the contact surface of the first cooling chamber 112 and the first cover plate 113.
As shown in fig. 3, the second semiconductor chilling plate 211 is stacked with the second cooling chamber 212; the second semiconductor chilling plate 211 and the second cooling chamber 212 are electrically isolated and heat-transferred by the second cover plate 213.
Also, in order to secure the heat transfer performance, a heat conductive silicone grease is coated on the contact surface of the second cooling chamber 212 and the second cover plate 213.
As shown in fig. 4, the first cooling chamber 112 and the second cooling chamber 212 provided herein include a serpentine flow tube 14, the serpentine flow tube 14 is disposed in the center of the cooling chamber and sealed by a sealing groove 15, and a cooling water inlet and a cooling water outlet are respectively opened at two ends of the serpentine flow tube 14. When the temperature needs to be reduced, cooling water is introduced from the cooling water inlet and flows out from the cooling water outlet to form a cooling circulation.
The first cover plate 113 and the second cover plate 213 are insulating ceramic cover plates.
The first and second pads 3 and 4, and the first and second semiconductor cooling modules 1 and 2 are loaded with power by the following power supply system.
The power supply system includes:
the upper computer 7 is used for man-machine interaction;
the singlechip 8 is in communication connection with the upper computer 7, outputs a control signal according to a received control instruction sent by the upper computer 7, and uploads the received data to the upper computer 7;
a heating remelting power supply 9, wherein the positive electrode and the negative electrode are respectively and electrically connected with the first bonding pad 3 and the second bonding pad 4;
the relay 10 is connected in series between the signal output end of the singlechip 8 and the heating remelting power supply 9, is conducted when the singlechip 8 outputs a control signal, so that the control signal output by the singlechip 8 is loaded on the heating remelting power supply 9, and the output power of the heating remelting power supply 9 is loaded on the first bonding pad 3 and the second bonding pad 4;
and the digital-to-analog converter is connected with the signal output end of the singlechip 8, is used for converting the digital signal output by the singlechip 8 into an analog signal, and is respectively loaded on the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 to be used as a working power supply of the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2, and is correspondingly matched with the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 and used for independently providing a working power supply for the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2.
When the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 respectively comprise a plurality of semiconductor refrigeration sub-modules, the digital-to-analog converter is correspondingly matched with the semiconductor refrigeration sub-modules and is used for independently providing working power supplies for the semiconductor refrigeration sub-modules; of course, one digital-to-analog converter may also provide working power for a semiconductor refrigeration module including a plurality of semiconductor refrigeration sub-modules, that is, one digital-to-analog converter provides working power for a plurality of semiconductor refrigeration sub-modules, but the plurality of semiconductor refrigeration sub-modules should be included in the first semiconductor refrigeration module 1 or the second semiconductor refrigeration module 2 at the same time.
In order to enable the digital-to-analog converter to output a constant current power supply and ensure the stable work of the semiconductor refrigeration module, the output of the digital-to-analog converter is loaded on the first semiconductor refrigeration module 1 or the second semiconductor refrigeration module 2 after passing through the operational amplifier; the output end of the operational amplifier is also connected with the signal input end of the singlechip, the digital-to-analog converter and the operational amplifier form a negative feedback system, and the singlechip adjusts the output according to the current condition output by the operational amplifier so as to keep the current loaded on the first semiconductor refrigeration module 1 or the second semiconductor refrigeration module 2 constant.
Here, the number of the operational amplifiers and the number of the digital-to-analog converters may be matched or may not be matched.
The power supply system further comprises a temperature acquisition device 13 which is in communication connection with the single chip microcomputer, wherein the temperature acquisition device 11 is positioned on one side of a gap formed by the first bonding pad 3 and the second bonding pad 4 and is not in contact with the first bonding pad 3 and the second bonding pad 4.
The temperature acquisition device is used for acquiring the temperature between the first bonding pad 3 and the second bonding pad 4 in the remelting process and transmitting the temperature to the upper computer 7 through the singlechip 8; a worker inputs a control instruction to the single chip microcomputer 8 through the upper computer 7 according to the uploaded temperature data, the relay 10 is cut off, meanwhile, signals output by the single chip microcomputer 8 are loaded on the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2 after passing through the digital-to-analog converter, the first semiconductor refrigeration module 1 is attached to one surface of the first bonding pad 3 for heating, and the second semiconductor refrigeration module 2 is attached to one surface of the second bonding pad 4 for refrigeration.
The temperature sensor, the single chip microcomputer and the semiconductor refrigeration module jointly form a closed-loop PID control system, when the soldering tin joint is solidified again, a worker inputs data of temperature gradient to the single chip microcomputer through an upper computer, the single chip microcomputer inputs control current to the first semiconductor refrigeration module and the second semiconductor refrigeration module after receiving an instruction, the temperature acquisition device returns temperature field data of the device to the single chip microcomputer, and the single chip microcomputer adjusts and outputs the data to the first semiconductor refrigeration module and the second semiconductor refrigeration module through a PID algorithm so that the temperature gradient between the first semiconductor refrigeration module and the second semiconductor refrigeration module can meet the requirements of users.
The temperature acquisition device is an infrared camera, and other devices capable of acquiring temperature can be adopted.
And the working personnel inputs a control instruction to the singlechip through the upper computer according to the uploaded temperature data to control the current loaded on the first semiconductor refrigeration module 1 and/or the second semiconductor refrigeration module 2, and the control instruction is used for adjusting the temperature gradient between the first semiconductor refrigeration module 1 and the second semiconductor refrigeration module 2.
Human-computer interaction is realized through an upper computer, and a controllable temperature gradient is applied when the soldering tin joint is solidified.
The device provided herein further comprises a cooling water circulator communicatively connected to the upper computer, the cooling water circulator being configured to provide cooling water to the first cooling chamber and the second cooling chamber. The cooling water circulator is an independent cooling water circulator and is directly connected with an upper computer through a USB port, and the flow rate of cooling water of the cooling water circulator is controlled through manual operation of software installed on the upper computer, so that the temperature gradient between the first semiconductor refrigeration module and the second semiconductor refrigeration module meets the requirements of users.
When remelting and solidifying, the first pad, the solder joint, the part to be welded and the second pad need to be connected by vacuum brazing welding before remelting by heating, and any vacuum brazing welding connection can be adopted, and the following vacuum brazing is adopted here:
step S11: etching the soldering tin material with 10% NaOH solution for 10min, keeping the temperature of the solution at 40-60 ℃, and then etching in nitric acid and hydrofluoric acid solution for 5 min;
step S12: and S11, placing the soldering tin material processed in the step S11 at a welding point between the first pad, the soldering tin joint, the part to be welded and the second pad, placing the soldering tin material in a vacuum brazing furnace after assembly, providing a certain external pressure, starting to heat to the brazing temperature for brazing when the vacuum in the brazing furnace is pumped to be below 6 x 10^ (-3) Pa, and taking out the sample after the brazing is finished and the sample is cooled to the room temperature along with the furnace.
The vacuum brazing method can ensure that oxidation does not occur in the welding process, and other welding methods can be adopted for replacement.
In order to ensure that the to-be-welded part 6 cannot fall off in the remelting and solidification processes, a pressure loading device is adopted to apply pressure to the first bonding pad, the second bonding pad, the soldering tin joint and the two ends of the to-be-welded part in the remelting and solidification processes, so that the end face of the soldering tin joint and the first bonding pad, the to-be-welded part and the second bonding pad are pressed all the time in the heating remelting process. The pressure loading device is not special, and only needs to ensure that the welding part does not fall off in the heating remelting process.
The device for driving remelting and semiconductor temperature control directional solidification by partition current overcomes the problem that the crystal grain orientation is uncontrollable in the traditional metal welding process, and improves the reliability of a welding position; the device provided by the invention is used for manufacturing the IGBT high-power component, and the problems that the grain orientation of a soldering tin joint of the IGBT high-power component is diffused and cannot be controlled in the welding process in the manufacturing process, copper-tin crystals are flattened and grow in a polarization mode under the condition of high current density under thermal fatigue, and the reliability of circuit elements is reduced are solved.
The present disclosure has been described in terms of the above-described embodiments, which are merely exemplary of the implementations of the present disclosure. It must be noted that the disclosed embodiments do not limit the scope of the disclosure. Rather, variations and modifications are possible within the spirit and scope of the disclosure, and these are all within the scope of the disclosure.
Claims (10)
1. A device for remelting by partition current drive and semiconductor temperature control directional solidification is characterized in that: the device comprises a first semiconductor refrigeration module (1), a second semiconductor refrigeration module (2), a first bonding pad (3), a second bonding pad (4) and a soldering tin joint (5); the first semiconductor refrigeration module (1) is in contact with the upper surface of the first bonding pad (3) in an attaching manner, the second semiconductor refrigeration module (2) is in contact with the lower surface of the second bonding pad (4) in an attaching manner, and the first bonding pad (3) and the second bonding pad (4) are arranged oppositely; when the first bonding pad (3) and the second bonding pad (4) are loaded by a power supply, the soldering tin joint (5) is resistive and is melted again after being electrically heated, and the soldering tin is in a flowing state; when a power supply is loaded, the first semiconductor refrigeration module (1) is attached to one surface of the first bonding pad (3) for heating; and when a power supply is loaded, the second semiconductor refrigeration module (2) is attached to one surface of the second bonding pad (4) for refrigeration, and a temperature gradient is formed in the cooling process of the soldering tin joint (5).
2. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 1, wherein: the first semiconductor refrigeration module (1) comprises a first semiconductor refrigeration sub-module A (11) and a first semiconductor refrigeration sub-module B (12), and the first semiconductor refrigeration sub-module A (11) and the first semiconductor refrigeration sub-module B (12) both comprise first semiconductor refrigeration pieces (111).
3. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 2, wherein: the first semiconductor refrigeration sub-module A (11) and the first semiconductor refrigeration sub-module B (12) further comprise a first cooling cavity (112), and the first semiconductor refrigeration piece (111) and the first cooling cavity (112) are arranged in a stacked mode; the first semiconductor refrigeration piece (111) and the first cooling cavity (112) are electrically isolated and heat-transferred by a first cover plate (113).
4. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 1, wherein: the second semiconductor refrigeration module (2) comprises a second semiconductor refrigeration sub-module A (21) and a second semiconductor refrigeration sub-module B (22), and the second semiconductor refrigeration sub-module A (21) and the second semiconductor refrigeration sub-module B (22) both comprise second semiconductor refrigeration pieces (211).
5. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 4, wherein: the second semiconductor refrigeration sub-module A (21) and the second semiconductor refrigeration sub-module B (22) further comprise a second cooling cavity (212), and the second semiconductor refrigeration piece (211) and the second cooling cavity (212) are arranged in a stacked mode; the second semiconductor refrigerating sheet (211) and the second cooling cavity (212) are electrically isolated and heat-transferred by a second cover plate (213).
6. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 4, wherein: the second semiconductor refrigeration sub-module A (21) and the second semiconductor refrigeration sub-module B (22) are independently loaded with power, and the power can be loaded to the second semiconductor refrigeration sub-module A (21) only, the second semiconductor refrigeration sub-module B (22) only, or the second semiconductor refrigeration sub-module A (21) and the second semiconductor refrigeration sub-module B (22) at the same time.
7. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to any one of claims 1-6, wherein: the semiconductor refrigeration device further comprises a power supply system, wherein power output by the power supply system is loaded on the first bonding pad (3) and the second bonding pad (4) on one hand, and is loaded on the first semiconductor refrigeration module (1) and the second semiconductor refrigeration module (2) on the other hand.
8. The apparatus of claim 7, wherein the power supply system comprises:
the upper computer is used for man-machine interaction;
the single chip microcomputer is in communication connection with the upper computer, outputs a control signal according to a received control instruction sent by the upper computer, and uploads received data to the upper computer;
a heating remelting power supply, wherein the positive electrode and the negative electrode are respectively and electrically connected with the first bonding pad (3) and the second bonding pad (4);
the relay is connected between the signal output end of the single chip microcomputer and the heating remelting power supply in series, and is conducted when the single chip microcomputer outputs a control signal, so that the control signal output by the single chip microcomputer is loaded on the heating remelting power supply, and the heating remelting power supply output power supply is loaded on the first bonding pad (3) and the second bonding pad (4);
and the digital-to-analog converter is connected with the signal output end of the singlechip and is used for converting the digital signal output by the singlechip into an analog signal and respectively loading the analog signal on the first semiconductor refrigeration module (1) and the second semiconductor refrigeration module (2).
9. The zone-current driven remelting and semiconductor temperature-controlled directional solidification device according to claim 8, wherein: the power supply system further comprises a temperature acquisition device in communication connection with the single chip microcomputer, and the temperature acquisition device is used for acquiring the temperature between the first bonding pad (3) and the second bonding pad (4) in the remelting process and uploading the temperature to the upper computer through the single chip microcomputer; and inputting a control instruction to the singlechip through the upper computer according to the uploaded temperature data, so that the singlechip outputs signals to be loaded on the first semiconductor refrigeration module (1) and the second semiconductor refrigeration module (2) after passing through the digital-to-analog converter while the relay is switched off, the first semiconductor refrigeration module (1) is attached to one surface of the first bonding pad (3) for heating, and the second semiconductor refrigeration module (2) is attached to one surface of the second bonding pad (4) for refrigerating.
10. A grain orientation control method based on semiconductor temperature control, comprising the zone current drive remelting and semiconductor temperature control directional solidification device based on claims 1-9, characterized in that the method comprises the following steps:
step S1: the first welding disc, the soldering tin joint, the part to be welded and the second welding disc are welded and connected through vacuum brazing before heating and remelting;
step S2: loading power is supplied to the first bonding pad, and the soldering tin joint generates joule heat to be melted again after being electrified;
step S3: after a certain time, a power supply is loaded on the first semiconductor refrigeration module and the second semiconductor refrigeration module, so that the first semiconductor refrigeration module is attached to one surface of the first bonding pad for heating, the second semiconductor refrigeration module is attached to one surface of the second bonding pad for refrigeration, and a temperature gradient is formed in the cooling process of the soldering tin joint.
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| CN112151401B (en) | 2023-08-18 |
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