CN112098708A - Line voltage information detection circuit and detection method for secondary side PD controller - Google Patents
Line voltage information detection circuit and detection method for secondary side PD controller Download PDFInfo
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Abstract
The invention discloses a line voltage information detection circuit and a line voltage information detection method for a secondary side PD controller, which belong to the technical field of voltage detection.A high-speed (HS) comparison circuit is respectively connected to a VD platform voltage and a VBUS voltage through a proportional circuit, and a high-side bias voltage is used as input to judge the working state of a primary side line voltage and the primary side switching frequency; the LS comparison circuit is respectively connected with the VD platform voltage and the VBUS voltage through the proportional circuit, and generates a VDS starting signal by taking the low-side bias voltage as input; the VD circuit is connected to the voltage of the VD platform through the proportional circuit and judges by the VDS starting signal to obtain VD sampling voltage, the VD sampling voltage is compared with the VD initial voltage, the VD highest voltage of the current period is calculated through the VD highest voltage to obtain high-side bias voltage, and therefore the purpose of detecting the primary line voltage effective value and the AC/DC controller switching frequency is achieved.
Description
Technical Field
The invention belongs to the technical field of voltage detection, and particularly relates to a line voltage information detection circuit and a line voltage information detection method for a secondary side PD controller.
Background
A secondary side PD controller, the system diagram of which is shown in fig. 1 in an application, is typically used to control a power transistor connected to a secondary winding of a power supply system to control an output voltage across the secondary winding.
During normal operation, the waveform of VDS at the SR (secondary) side varies according to the effective value of the line voltage VIN and the load, as shown in fig. 2, where VIN is the effective value of the primary output ac power voltage, and NPS is the primary-secondary turn ratio of the transformer.
As can be seen from the above, since the VDS waveform varies with the VIN effective value and the switching frequency, and there is a resonance-like sinusoidal waveform that interferes with correctly sampling the line voltage information, in order to detect the primary side controller switching frequency and the line voltage effective value from the SR (secondary) side VDS waveform, it is necessary to take an appropriate comparison threshold to compare with the waveform, and at the same time, it is necessary to correctly sample the platform voltage (VBUS + VIN/NPS) of the VDS waveform.
Disclosure of Invention
In view of the above, the present invention provides a line voltage information detection circuit and a detection method for a secondary side PD controller to achieve the purpose of detecting the effective value of the primary line voltage and the switching frequency of the AC/DC controller.
The technical scheme adopted by the invention is as follows: a line voltage information sensing circuit for a secondary side PD controller, the sensing circuit comprising:
the high-voltage comparison circuit is connected to the VD platform voltage and the VBUS voltage through the proportional circuit respectively, and judges the working state of the primary line voltage and the primary switching frequency by taking the high-side bias voltage as input;
the LS comparison circuit is respectively connected with the VD platform voltage and the VBUS voltage through the proportional circuit and generates a VDS starting signal by taking the low-side bias voltage as input;
and the VD circuit is connected to the voltage of the VD platform through a proportional circuit and judges and obtains VD sampling voltage through a VDS starting signal, and the VD sampling voltage is compared with the VD initial voltage so as to obtain the highest VD voltage of the current period and calculate the high-side bias voltage through the highest VD voltage.
Further, the VD platform voltage is respectively connected with the HS comparison circuit, the LS comparison circuit and the VD circuit through a 50:1 proportion circuit.
Further, the VBUS voltage is connected with a 10:1 resistor network, and the LS comparison circuit are respectively connected with the 10:1 resistor network through a 5:1 proportional circuit.
Further, the HS compare circuit comprises:
the positive end of the HS comparator is connected to the 50:1 proportional circuit, and the output end of the HS comparator generates the working state of the primary line voltage and the primary switching frequency;
an ADDER1 ADDER, the output of the ADDER1 ADDER connected to the negative terminal of the HS comparator, and the input of the ADDER1 ADDER connected to the high side bias voltage and 5:1 ratio circuit, respectively.
Further, the LS comparison circuit includes:
the positive electrode end of the LS comparator is connected with the 50:1 proportional circuit, and the output end of the LS comparator generates a VDS starting signal;
an ADDER2 ADDER, the output terminal of the ADDER2 ADDER is connected to the negative terminal of the LS comparator, and the input terminals of the ADDER2 ADDER are respectively connected to the low-side bias voltage and 5:1 proportional circuit.
Further, the VD circuit includes:
the input end of the TG1 transmission gate is connected to the 50:1 proportional circuit, and the TG1 transmission gate is opened through the VDS starting signal to obtain VD sampling voltage;
the TG2 transmission gate is connected with the output end of the TG1 transmission gate;
and the positive end of the VD comparator is respectively connected with the output end of the TG2 transmission gate and the VD initial voltage, the negative end of the VD comparator is connected with the 50:1 proportional circuit, and the output end of the VD comparator is connected with the control end of the TG2 transmission gate.
Further, the VDS start signal is delayed by a leading edge blanking circuit and then input to the control terminal of the TG1 transmission gate, so as to ensure that an effective VD voltage value can be sampled.
Furthermore, a buffer is connected between the TG1 transmission gate and the TG2 transmission gate, a capacitor is arranged between the TG2 transmission gate and the buffer, and voltage information of the VD sampled voltage is stored by the capacitor.
The invention also discloses a line voltage information detection method for the secondary side PD controller, which comprises the following steps:
setting a low-side bias voltage, adding the low-side bias voltage and the divided VBUS voltage to obtain a low-side threshold voltage, and comparing the low-side threshold voltage with the divided VD platform voltage to generate a VDS starting signal;
starting to collect VD platform voltage according to the VDS starting signal to obtain VD sampling voltage, and comparing the VD sampling voltage with the set VD initial voltage to obtain the VD highest voltage of the current period;
and calculating a high-side bias voltage according to the VD highest voltage, adding the high-side bias voltage and the divided VBUS voltage to obtain a high-side threshold voltage, and comparing the high-side threshold voltage with the divided VD platform voltage to judge the working state of the primary side line voltage and the primary side switching frequency.
Furthermore, the VDS starting signal starts to acquire the voltage of the VD platform after an interval time delay.
The invention has the beneficial effects that:
1. the line voltage information detection circuit and the line voltage information detection method for the secondary side PD controller are adopted, the low-side threshold is designed to be slightly higher than VBUS voltage, a waveform starting signal is obtained through comparison of the low-side threshold comparator, VD sampling voltage is obtained through a sampling circuit after Blanking Time delay Time, primary side switching frequency and line voltage information are obtained through comparison of the self-adaptive high-side threshold comparator, and therefore the primary side line voltage effective value and the AC/DC controller switching frequency can be accurately detected.
Drawings
FIG. 1 is a secondary side PD controller system block diagram;
FIG. 2 is a schematic diagram of a secondary side VDS waveform;
fig. 3 is an overall circuit diagram of a line voltage information detection circuit for a secondary side PD controller according to the present invention;
fig. 4 is a schematic diagram of the VDS signal comparison sampling principle.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar modules or modules having the same or similar functionality throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. On the contrary, the embodiments of the application include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.
Example 1
As shown in fig. 3 and fig. 4, in this embodiment, a line voltage information detection circuit for a secondary side PD controller is specifically disclosed, and the detection circuit can determine whether a primary side line voltage operates at 110V or 220V and a primary side switching frequency, based on the following principle: the method comprises the steps that a low-side threshold voltage (TH _ LS) is designed to be slightly higher than a VBUS voltage, waveform starting information is obtained through comparison of a low-side threshold comparator, primary side switching frequency and line voltage information are obtained through comparison of a self-adaptive high-side threshold comparator, and a VDS platform voltage (VBUS + VIN/NPS) is sampled through a sampling circuit through delay Time Blanking. Specifically, the detection circuit includes: HS comparator circuit, LS comparator circuit and VD circuit.
HS comparing circuit
The HS comparison circuit includes: HS comparator and addr 1 ADDER. The positive end of the HS comparator is connected to a 50:1 proportional circuit and is connected to the voltage of a VD platform through the 50:1 proportional circuit, 1/50 of the voltage of the VD platform is used as the input voltage of the positive end, the 50:1 proportional circuit is composed of two resistors which are connected in series, one end of the series circuit is connected to the voltage of the VD platform, and the space between the two resistors is connected to the positive end of the HS comparator.
The negative terminal of the HS comparator is connected to the output terminal of the ADDER1 ADDER, and the input terminals of the ADDER1 ADDER are respectively connected to the high-side bias voltage OS _ HS and the 5:1 proportional circuit; the high-side bias voltage OS _ HS is obtained by calculation of the VD highest voltage of the VD circuit, is slightly lower than the VD highest voltage, and can be set to be a coefficient of the VD highest voltage multiplied by 0.75 in practical application; one end of the 5:1 proportional circuit is connected to the 10:1 resistor network, so that the VBUS voltage is sampled by the 10:1 resistor network and then the VBUS voltage of 1/50 obtained by the 5:1 proportional circuit is used as the input of the ADDER1 ADDER.
The method comprises the steps that 1/50 VBUS voltage and high side bias voltage OS _ HS are added to obtain high side threshold voltage (TH _ HS), the high side threshold voltage (TH _ HS) is compared with VD platform voltage to serve as an output signal of an output end of an HS comparator, and the output signal can be processed to judge the working state of generated primary side line voltage and primary side switching frequency, namely judge whether the primary side line voltage works at 110V or 220V and the primary side switching frequency, so that the final function of the detection circuit is achieved.
② LS comparison circuit
The LS comparison circuit includes: LS comparator and addr 2 ADDER. The positive end of the LS comparator is connected to a 50:1 proportional circuit, and is connected to the VD platform voltage through the 50:1 proportional circuit, 1/50 of the VD platform voltage is used as the input voltage of the positive end, the 50:1 proportional circuit is a shared proportional circuit and consists of two resistors which are connected in series, one end of the series circuit is connected to the VD platform voltage, and the space between the two resistors is connected to the positive end of the LS comparator;
the negative end of the LS comparator is connected with the output end of the ADDER2 ADDER, and the input end of the ADDER2 ADDER is respectively connected with the low-side bias voltage OS _ LS and the 5:1 proportional circuit; the low-side bias voltage OS _ LS is set artificially and is slightly higher than the VBUS voltage, in practical application, the low-side bias voltage OS _ LS is slightly higher than the VBUS voltage, and the low-side bias voltage OS _ LS is selected to be in the range of 0.1-0.45V; one end of the 5:1 proportional circuit is connected to the 10:1 resistor network, so that the VBUS voltage is sampled by the 10:1 resistor network and then is obtained by the 5:1 proportional circuit to be 1/50 of the VBUS voltage which is used as the input of the ADDER2 ADDER.
The low-side threshold voltage (TH _ LS) is obtained by adding 1/50 of VBUS voltage and the low-side bias voltage OS _ LS, the low-side threshold voltage (TH _ LS) is compared with VD voltage to obtain a VDS starting signal, and the VDS starting signal is output from the output end of the LS comparator and serves as a starting signal in the VD circuit.
③ VD circuit
The VD circuit comprises: the input end of the TG1 transmission gate is connected with the 50:1 proportional circuit and is connected to the VD platform voltage through the 50:1 proportional circuit, the control end of the TG1 transmission gate is started through the high level fed back by the VDS starting signal, and the VD platform voltage is sampled through the TG1 transmission gate to obtain the VD sampling voltage. In order to ensure that the TG1 transmission gate can acquire the effective value of the VD platform voltage, after the VDS starting signal is output by the output end of the LS comparator, the VDS starting signal needs to be input to the control end of the TG1 transmission gate after being delayed by the leading edge blanking circuit, and at the moment, the TG1 transmission gate can acquire the effective value of the VD platform voltage.
The input end of the TG2 transmission gate is connected with the output end of the TG1 transmission gate, the output end of the TG2 transmission gate is connected with the positive electrode end of the VD comparator, and meanwhile, the opening of the TG2 transmission gate is determined by the VD _ Hold signal output by the VD comparator;
and the positive end of the VD comparator is respectively connected with the output end of the TG2 transmission gate and the VD initial voltage, the negative end of the VD comparator is connected with the 50:1 proportional circuit, the 50:1 proportional circuit is also connected to the VD platform voltage, the output end of the VD comparator is connected to the control end of the TG2 transmission gate, and the VD initial voltage is a manually set voltage value.
A Buffer is connected between the TG1 transmission gate and the TG2 transmission gate, a capacitor C2 is arranged between the TG2 transmission gate and the Buffer, voltage information of VD sampling voltage is stored through the capacitor C2, a capacitor C1 is arranged between the TG1 transmission gate and the Buffer, the other end of the capacitor C1 is grounded, a capacitor C3 is connected to the output end of the TG2 transmission gate, and the other end of the capacitor C3 is grounded.
Triggering a TG1 transmission gate by a VDS opening signal to sample VD platform voltage and obtain VD sampling voltage, comparing the VD sampling voltage with VD initial voltage to obtain the VD highest voltage of the current period and calculating the high-side bias voltage by the VD highest voltage, wherein during specific calculation, for example: the high side bias voltage can be chosen to be VD max x a factor of 0.75.
Example 2
The embodiment also specifically discloses a line voltage information detection method for a secondary side PD controller, which includes:
artificially setting a low-side bias voltage, adding the low-side bias voltage and a VBUS voltage with a proportionality coefficient of 1/50 through an ADDER2 ADDER to obtain a low-side threshold voltage (TH _ LS), comparing the low-side threshold voltage (TH _ LS) with a VD platform voltage with a proportionality coefficient of 1/50 through an LS comparator, and generating a VDS opening Signal ON Signal by the LS comparator if the low-side threshold voltage (TH _ LS) is lower than the VD platform voltage with a proportionality coefficient of 1/50; otherwise, generating no VDS opening Signal ON Signal;
the VDS starting signal is transmitted to a TG1 transmission gate after interval time delay, a TG1 transmission gate is triggered to sample the voltage of a VD platform and obtain effective VD sampling voltage, and the VD sampling voltage is stored in a capacitor C2 through a Buffer;
comparing the VD sampling voltage with an initially set VD initial voltage through a VD comparator, and when the VD sampling voltage is greater than the VD initial voltage, outputting a VD _ Hold signal by an output end of the VD comparator and triggering a TG2 transmission gate to open, and obtaining the VD Highest voltage (VD _ Highest) until the current period; if the VD sampling voltage is less than the VD initial voltage, the output end of the VD comparator cannot output a VD _ Hold signal, the TG2 transmission gate is kept closed, and the VD initial voltage of the current period is taken as the VD highest voltage;
according to the VD maximum voltage, the formula is as follows: the method comprises the steps that the coefficient of VD maximum voltage x 0.75 = high-side bias voltage is calculated to obtain high-side bias voltage, the high-side bias voltage and 1/50 VBUS voltage are added through an ADDER1 ADDER to obtain high-side threshold voltage (TH _ HS), the high-side threshold voltage (TH _ HS) is compared with 1/50 VD platform voltage through an HS comparator, accordingly, the working state and the primary side switching frequency of the primary side line voltage are judged, namely whether the primary side line voltage works at 110V or 220V and the primary side line switching frequency is judged, and a Detector Signal is generated to be output, so that the final function of the detection circuit is achieved.
It should be noted that, in the description of the present application, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Further, in the description of the present application, the meaning of "a plurality" means at least two unless otherwise specified.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (10)
1. A line voltage information detection circuit for a secondary side PD controller, the detection circuit comprising:
the high-voltage comparison circuit is connected to the VD platform voltage and the VBUS voltage through the proportional circuit respectively, and judges the working state of the primary line voltage and the primary switching frequency by taking the high-side bias voltage as input;
the LS comparison circuit is respectively connected with the VD platform voltage and the VBUS voltage through the proportional circuit and generates a VDS starting signal by taking the low-side bias voltage as input;
and the VD circuit is connected to the voltage of the VD platform through a proportional circuit and judges and obtains VD sampling voltage through a VDS starting signal, and the VD sampling voltage is compared with the VD initial voltage so as to obtain the highest VD voltage of the current period and calculate the high-side bias voltage through the highest VD voltage.
2. The line voltage information detection circuit for a secondary side PD controller according to claim 1, characterized in that said VD stage voltage is connected to HS comparator circuit, LS comparator circuit and VD circuit respectively through 50:1 ratio circuit.
3. The line voltage information detection circuit for the secondary side PD controller according to claim 2, characterized in that the VBUS voltage is connected with a 10:1 resistor network, and the LS comparison circuit are connected with the 10:1 resistor network through 5:1 proportional circuits, respectively.
4. The line voltage information detection circuit for a secondary side PD controller according to claim 3, wherein said HS comparison circuit comprises:
the positive end of the HS comparator is connected to the 50:1 proportional circuit, and the output end of the HS comparator generates the working state of the primary line voltage and the primary switching frequency;
an ADDER1 ADDER, the output of the ADDER1 ADDER connected to the negative terminal of the HS comparator, and the input of the ADDER1 ADDER connected to the high side bias voltage and 5:1 ratio circuit, respectively.
5. The line voltage information detection circuit for a secondary-side PD controller according to claim 3, characterized in that said LS comparison circuit comprises:
the positive electrode end of the LS comparator is connected with the 50:1 proportional circuit, and the output end of the LS comparator generates a VDS starting signal;
an ADDER2 ADDER, the output terminal of the ADDER2 ADDER is connected to the negative terminal of the LS comparator, and the input terminals of the ADDER2 ADDER are respectively connected to the low-side bias voltage and 5:1 proportional circuit.
6. The line voltage information detection circuit for a secondary side PD controller according to claim 3, wherein said VD circuit comprises:
the input end of the TG1 transmission gate is connected to the 50:1 proportional circuit, and the TG1 transmission gate is opened through the VDS starting signal to obtain VD sampling voltage;
the TG2 transmission gate is connected with the output end of the TG1 transmission gate;
and the positive end of the VD comparator is respectively connected with the output end of the TG2 transmission gate and the VD initial voltage, the negative end of the VD comparator is connected with the 50:1 proportional circuit, and the output end of the VD comparator is connected with the control end of the TG2 transmission gate.
7. The line voltage information detection circuit for the secondary side PD controller as claimed in claim 6, characterized in that the VDS on signal is delayed by a leading edge blanking circuit and then inputted to the control terminal of the TG1 transmission gate.
8. The line voltage information detection circuit for the secondary side PD controller according to claim 6, characterized in that a buffer is connected between the TG1 transfer gate and the TG2 transfer gate, a capacitor is provided between the TG2 transfer gate and the buffer, and the voltage information of the VD sampled voltage is stored by the capacitor.
9. A line voltage information detection method for a secondary side PD controller, characterized by comprising:
setting a low-side bias voltage, adding the low-side bias voltage and the divided VBUS voltage to obtain a low-side threshold voltage, and comparing the low-side threshold voltage with the divided VD platform voltage to generate a VDS starting signal;
starting to collect VD platform voltage according to the VDS starting signal to obtain VD sampling voltage, and comparing the VD sampling voltage with the set VD initial voltage to obtain the VD highest voltage of the current period;
and calculating a high-side bias voltage according to the VD highest voltage, adding the high-side bias voltage and the divided VBUS voltage to obtain a high-side threshold voltage, and comparing the high-side threshold voltage with the divided VD platform voltage to judge the working state of the primary side line voltage and the primary side switching frequency.
10. The method of claim 9, wherein the VDS enable signal is delayed by an interval time before the VD stage voltage is collected.
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| CN117310262A (en) * | 2023-11-28 | 2023-12-29 | 成都市易冲半导体有限公司 | Primary side information detection circuit and detection chip of transformer |
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