CN112086580A - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

Info

Publication number
CN112086580A
CN112086580A CN202010967785.5A CN202010967785A CN112086580A CN 112086580 A CN112086580 A CN 112086580A CN 202010967785 A CN202010967785 A CN 202010967785A CN 112086580 A CN112086580 A CN 112086580A
Authority
CN
China
Prior art keywords
electrode
display panel
layer
cracks
conductive particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010967785.5A
Other languages
Chinese (zh)
Inventor
杨林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN202010967785.5A priority Critical patent/CN112086580A/en
Publication of CN112086580A publication Critical patent/CN112086580A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The application discloses a display panel and a preparation method thereof, wherein the display panel comprises a first electrode, and the first electrode comprises a graphene layer; the graphene layer comprises cracks which are irregularly arranged and a plurality of conductive particles which are positioned in the cracks, so that the toughness and the conductivity of the first electrode are improved, and the flexible display of the display panel is realized.

Description

Display panel and preparation method thereof
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
The flexible display panel is an important development trend in the display field because of its advantages of being foldable, adjustable display area, etc., but under the condition of large bending angle and bending strength, the electrode is easy to break, which affects the service life of the display panel.
Disclosure of Invention
The embodiment of the application provides a display panel and a preparation method thereof, which can improve the toughness and the conductivity of an electrode.
An embodiment of the present application provides a display panel, including:
a first electrode comprising a graphene layer; the graphene layer comprises cracks which are irregularly arranged and a plurality of conductive particles which are positioned in the cracks.
In some embodiments, the conductive particles comprise metal nanoparticles comprising at least one of gold nanoparticles, silver nanoparticles, platinum nanoparticles.
In some embodiments, the display panel includes a light emitting device including the first electrode; a light-emitting layer on one side of the first electrode; and a cathode located on a side of the light emitting layer away from the first electrode.
In some embodiments, the display panel includes a plurality of transistors, at least one of the transistors including the first electrode.
In some embodiments, the transistor comprises a gate and a source and a drain of a different layer than the gate, one of the gate, the source and the drain comprising the first electrode.
The application also provides a preparation method of the display panel, which comprises the following steps:
step S10: providing a substrate;
step S20: preparing a first electrode on the surface of the substrate;
the first electrode comprises a graphene layer, wherein the graphene layer comprises cracks irregularly arranged and a plurality of conductive particles positioned in the cracks.
In some embodiments, the conductive particles comprise gold nanoparticles, and the step S20 further comprises:
step S21: preparing a graphene film on the surface of the substrate, and performing first drying treatment on the graphene film to prepare and form the graphene layer comprising the cracks;
step S22: and placing the substrate in a chloroauric acid solution for soaking treatment, and then carrying out secondary drying treatment on the substrate to decompose the conductive particles, wherein the conductive particles are positioned in the cracks to prepare and form the first electrode.
In some embodiments, the baking temperature in the first drying treatment is 50-200 ℃, and the baking time is 2-120 minutes; the baking temperature in the second drying treatment is 60-180 ℃, and the baking time is 10-120 minutes; the soaking time of the soaking treatment is 1-60 minutes.
In some embodiments, the chloroauric acid solution includes chloroauric acid and a polar solvent.
In some embodiments, the chloroauric acid solution includes gold chloride at a concentration of 0.1mg/ml to 10 mg/ml.
The display panel comprises a first electrode, wherein the first electrode comprises a graphene layer; the graphene layer comprises cracks which are irregularly arranged and a plurality of conductive particles which are positioned in the cracks, so that the toughness and the conductivity of the first electrode are improved, and the flexible display of the display panel is realized.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1A to fig. 1C are schematic structural diagrams of a display panel according to an embodiment of the present disclosure;
fig. 2A to 2B are flow charts of manufacturing a display panel according to an embodiment of the present disclosure;
fig. 2C to 2E are schematic views illustrating a process of manufacturing a display panel by using the manufacturing method shown in fig. 2A to 2B.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Specifically, please refer to fig. 1A to fig. 1C, which are schematic structural diagrams of a display panel according to an embodiment of the present application; an embodiment of the present application provides a display panel, including:
a first electrode 101, the first electrode 101 comprising a graphene layer 1011; the graphene layer 1011 comprises cracks 101a which are irregularly arranged and a plurality of conductive particles 1012 located in the cracks 101a, so that the toughness and the conductivity of the first electrode 101 are improved, the risk that the first electrode 101 breaks under the condition that the bending angle and the bending strength of the display panel are large is reduced, and the display panel is facilitated to realize flexible display.
Further, the conductive particles 1012 are uniformly distributed in the crack 101a, and the conductive particles 1012 include metal nanoparticles including at least one of gold nanoparticles, silver nanoparticles, platinum nanoparticles, copper nanoparticles, and the like.
The generation of the crack 101a is influenced by factors such as process parameters, solution performance, internal stress, external stress, environment (high temperature, humidity and the like) and the like; specifically, taking a spin coating process as an example in the display panel manufacturing process, the faster the rotation rate is, the thinner the thickness of the obtained graphene layer 1011 is, the more easily the crack 101a is generated; or the greater the viscosity of the solution for preparing the graphene layer 1011, the thicker the thickness of the prepared graphene layer 1011, and the more likely the crack 101a is generated. In addition, under the combined action of multiple factors, part of the cracks 101a in the graphene layer 1011 may further expand, and part of the cracks 101a extend to the bottom of the graphene layer 1011, so that at least two different depths of the cracks 101a are included in the graphene layer 1011. However, since the graphene layer 1011 has good toughness, a large amount of plastic deformation energy is consumed for the generation and propagation of the crack 101 a. Therefore, the probability of the crack 101a expanding to the adjacent film layer in the display panel is reduced, which is beneficial to prolonging the service life of the display panel.
Due to the difference that each region on the graphene layer 1011 is influenced by factors such as process parameters, solution performance, internal stress, external stress and environment (high temperature, humidity, etc.), the shape and the extension direction of each crack 101a in the graphene layer 1011 can be different, so that at least two cracks 101a with different shapes are included in the graphene layer 1011; further, at least two kinds of the slits 101a extending in different directions are included in the graphene layer 1011. Still further, at least one of the slots 101a includes two shapes; that is, at least one of the fractures 101a includes a plurality of straight lines and curved lines; wherein, the extending directions of the straight lines can be different, and the curvature radiuses of the curves can be different; the plurality of straight lines may be connected in series or with a plurality of curved lines to form the slit 101 a.
In practical applications, the number of the cracks 101a in the graphene layer 1011 can be optimized by adjusting process parameters, the film thickness of the graphene layer 1011, and the like. Further, the thickness of the graphene layer 1011 is greater than or equal to 100nm and less than or equal to 500 nm; further, the thickness of the graphene layer 1011 is greater than or equal to 100nm and less than or equal to 300 nm.
The more the cracks 101a are included in the graphene layer 1011, the larger the resistivity of the first electrode 101 is, the larger the influence on the conductivity of the first electrode 1011 is, and the conductive particles 1012 are filled in the cracks 101a, so that the influence of the cracks 101a on the conductivity of the first electrode 1011 can be effectively improved, and the conductivity of the first electrode 1011 is improved.
With continued reference to fig. 1A to 1C, the display panel includes a light emitting device 102, and the light emitting device 102 includes the first electrode 101; a light-emitting layer 1021 on the first electrode 101 side; and a cathode 1022 located on a side of the light emitting layer 1021 away from the first electrode 101, so that the first electrode 101 forms an anode 1023 of the light emitting device 102, and the graphene layer 1011 is used to replace an indium tin oxide layer so that the light emitting device 102 has certain toughness, which is convenient for the display panel to realize flexible display.
Further, the cathode 1022 may also include the first electrode 101, so that the display panel can conveniently realize transparent display by using the good light transmittance of the graphene layer 1011 in the first electrode 101.
Furthermore, the materials of the conductive particles in any two of the first electrodes 101 may be the same or different; specifically, when the anode 1023 and the cathode 1022 of the light emitting device 102 each include the first electrode 101, the conductive particles 1012 included in the anode 1023 may be different from the conductive particles 1012 included in the cathode 1022 in material, so that the anode 1023 and the cathode 1022 of the light emitting device 102 have different work functions, ensuring the light emitting efficiency of the light emitting device 102.
The light emitting device 102 includes one of an organic light emitting diode, a sub-millimeter light emitting diode, and a micro light emitting diode.
Further, the display panel comprises a plurality of transistors 103, and at least one of the transistors 1031 comprises the first electrode 101.
Specifically, the transistor 1031 includes a gate 1031a, and a source 1031b and a drain 1031c that are different from the gate 1031a, and one of the gate 1031a, the source 1031b, and the drain 1031c includes the first electrode 101, so as to improve the electrical performance of the transistor 1031.
Further, at least one of the transistors 1032 of the plurality of transistors 103 further includes a sensing layer 1032e, and the sensing layer 1032e includes a photosensitive layer, a thermosensitive layer, and the like, so that the display panel can sense light, temperature, and the like, as shown in fig. 1B. The active layer, the gate electrode, the source electrode and the drain electrode of the transistors 103 may be made of different materials, that is, the active layer 1031d, the gate electrode 1031a, the source electrode 1031b and the drain electrode 1031c of the transistor 1031 may be made of different materials than the active layer 1032d, the gate electrode 1032a, the source electrode 1032b and the drain electrode 1032c of the transistor 1032. Further, the transistors 1031 and 1032 include at least one of an oxide transistor and a silicon transistor.
In addition, since the first electrode 101 includes the graphene layer 1011, the display panel can sense light, temperature, quality, and the like by using the good light transmittance, electrical conductivity, thermal conductivity, and the like of the graphene layer 1011. Further, the conductive particles 1012 located in the cracks may further include materials such as aluminum oxide, titanium oxide, silicon oxide, zinc oxide, lead sulfide, cadmium sulfide, and the like, so that the first electrode 101 may be matched with different materials to achieve different sensing functions.
Specifically, referring to fig. 1C, for example, to implement the optical sensing, the display panel includes the transistor 1031, the transistor 1031 includes an active layer 1031d, a gate 1031a, a source 1031b, and a drain 1031C, the first electrode 101 is located on one side of the first insulating layer 105 away from the gate 1031a and is electrically connected to the source 1031b and the drain 1031C, a schottky barrier is formed by the electrically connected portions of the source 1031b and the drain 1031C and the first electrode 101, in a space electric field of schottky, excess electrons and holes excited by an optical signal are separated by a built-in electric field to form an optical current signal, and the optical current signal is derived through the source 1031b and the drain 1031C, so that the display panel implements the optical sensing.
With continued reference to fig. 1A to fig. 1C, the display panel further includes a substrate 104 and an encapsulation layer 106. The light emitting device 102 is located on one side of the substrate 104, the transistor 103 is located between the light emitting device 102 and the substrate 104, and the encapsulation layer 106 is located on one side of the light emitting device 102 far away from the substrate 104, so as to prevent the light emitting device 102 from being corroded by water and oxygen.
Further, the display panel may further include a color film layer and other parts not shown, where the color film layer includes a plurality of color film units, and the color film units are disposed in alignment with the light emitting devices 102 to improve the contrast of the display panel.
With reference to fig. 1A to fig. 1C, the display panel further includes a second insulating layer 107 and a pixel defining layer 108, the pixel defining layer 108 includes a plurality of pixel defining areas, and the light emitting layer 1021 of the light emitting device 102 is located in the pixel defining areas.
Please refer to fig. 2A-2B, which are flow charts of manufacturing a display panel according to an embodiment of the present disclosure; fig. 2C to 2E are schematic views illustrating a process of manufacturing a display panel by using the manufacturing method shown in fig. 2A to 2B; the application also provides a preparation method of the display panel, which comprises the following steps:
step S10: providing a substrate 200;
step S20: preparing a first electrode 201 on the surface of the substrate 200;
the first electrode 201 comprises a graphene layer 2011, the graphene layer 2011 comprises cracks 201a in irregular arrangement and a plurality of conductive particles 2012 positioned in the cracks 201a, so that the first electrode 101 is prepared, and the preparation method has the advantages of simple process and strong operability.
Further, the conductive particles 2012 include gold nanoparticles, and the step S20 further includes:
step S21: preparing a graphene film on the surface of the substrate 200, and performing a first drying process on the graphene film to prepare and form the graphene layer 2011 including the cracks 201a, as shown in fig. 2C;
step S22: after the substrate 200 is placed in a chloroauric acid solution for soaking treatment, the substrate 200 is dried for the second time, so that the conductive particles 2012 are decomposed, and the conductive particles 2012 are located in the crack 201a to prepare and form the first electrode 201, as shown in fig. 2D.
The graphene film can be prepared by adopting the processes of evaporation, coating or ink-jet printing technology and the like; the baking temperature in the first drying treatment is 50-200 ℃, and the baking time is 2-120 minutes; the baking temperature in the second drying treatment is 60-180 ℃, and the baking time is 10-120 minutes; the soaking time of the soaking treatment is 1-60 minutes.
Further, the soaking time of the soaking treatment is 1 minute, 5 minutes, 11 minutes, 20 minutes, 22 minutes, 30 minutes, 40 minutes, 52 minutes, 57 minutes, 59 minutes or 60 minutes; the baking temperature in the first drying treatment is 50 ℃, 53 ℃, 60 ℃, 76 ℃, 80 ℃, 95 ℃, 100 ℃, 137 ℃, 151 ℃, 180 ℃, 194 ℃ or 200 ℃, and the baking temperature in the second drying treatment is 60 ℃, 63 ℃, 72 ℃, 83 ℃, 100 ℃, 117 ℃, 139 ℃, 162 ℃ or 180 ℃. Furthermore, the soaking time of the soaking treatment is 30 minutes, the baking temperature of the second drying treatment is 100 ℃, and the baking time of the second drying treatment is 40 minutes. After the second drying treatment is finished, the substrate 200 may be further cooled by using an air flow, and the residual conductive particles 2012 on the surface of the first electrode 201 are removed; further, the cooling process of the substrate 200 may be performed using a gas such as nitrogen, argon, or the like at a flow rate of 5m/s to 25 m/s.
The chloroauric acid solution comprises chloroauric acid and a polar solvent. Further, the polar solvent includes an isopropyl alcohol solution. The chloroauric acid solution comprises gold chloride, and the concentration of the gold chloride is 0.1 mg/ml-10 mg/ml.
By mixing chloroauric acid (HAuCI)4·H2O) directly dissolving in an isopropanol solution to form said chloroauric acid solution, immersing said substrate 200 in said chloroauric acid solution into said crevices 201a of said graphene layer 2011 after said immersion treatment, and then performing said second drying treatment on said substrate 200, said substrate immersed into said crevices 201aChloroauric acid (HAuCI)4) Decomposition occurs; i.e. by HAuCI4→AuCI3+ HCI to 2AuCI3→2AuCI+CI2(ii) a Thus obtaining 2AuCI → 2Au + CI2(ii) a The decomposed gold (Au) nanoparticles are sufficiently filled in the crack 201a to increase the conductivity of the first electrode 201.
The substrate 200 includes a rigid substrate and a flexible substrate, and further, the substrate 200 is made of a material including glass, polyimide, and the like.
Further, before step S20, the preparation method further includes the steps of:
s11: preparing a buffer layer (not shown in the figure) on the surface of the substrate 200;
s12: a driving array layer 202 is prepared on the surface of the buffer layer.
The buffer layer may be prepared by chemical vapor deposition, physical vapor deposition, and the like, and the driving array layer 202 includes a plurality of transistors and control traces. The transistor includes at least one of an oxide transistor and a silicon transistor.
The buffer layer includes inorganic material such as silicon oxide, the driving array layer 202 includes metal material such as molybdenum and titanium and inorganic material such as silicon oxide, and the substrate 200, the buffer layer and the driving array layer 202 have a withstand temperature of 400 ℃ or higher, so that the substrate 200, the buffer layer and the driving array layer 202 are not affected during the baking process.
Further, after the step S20, the preparation method further includes the steps of:
s30: preparing a functional layer 203 on the surface of the first electrode 201;
s40: an encapsulation layer 204 is prepared on the surface of the functional layer 203, as shown in fig. 2E.
Further, the display panel includes a light emitting device including the first electrode 201, a light emitting layer, and a cathode on a side of the light emitting layer away from the first electrode 201. The functional layer 203 comprises the light emitting layer or a photon trapping layer in a photovoltaic device. Further, the light emitting device further includes an electron transport layer and a hole transport layer. The functional layer 203 can be prepared by adopting processes such as evaporation, ink-jet printing and the like; the encapsulation layer 204 can be prepared by chemical vapor deposition, atomic layer deposition, pulsed laser deposition, and the like. The encapsulation layer 204 includes an inorganic layer and an organic layer stacked.
In addition, the first electrode 201 may also be located in the driving array layer 202. Specifically, the driving array layer 202 includes a plurality of the transistors, and one of a source, a drain, and a gate of at least one transistor includes the first electrode 201; or the source and the drain of at least one transistor are electrically connected with the first electrode 201, so that the display panel realizes light sensing.
The application also provides a display device comprising the display panel or the display panel prepared by the display panel preparation method.
Further, the display device comprises a rigid display device and a flexible display device; further, the display panel includes a liquid crystal display device and an organic light emitting display device.
The display panel comprises a first electrode, wherein the first electrode comprises a graphene layer; the graphene layer comprises cracks which are irregularly arranged and a plurality of conductive particles which are positioned in the cracks, so that the toughness and the conductivity of the first electrode are improved, and the flexible display of the display panel is realized.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel and the manufacturing method thereof provided by the embodiment of the present application are described in detail above, and the principle and the embodiment of the present application are explained by applying specific examples herein, and the description of the above embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. A display panel, comprising:
a first electrode comprising a graphene layer; the graphene layer comprises cracks which are irregularly arranged and a plurality of conductive particles which are positioned in the cracks.
2. The display panel of claim 1, wherein the conductive particles comprise metal nanoparticles comprising at least one of gold nanoparticles, silver nanoparticles, and platinum nanoparticles.
3. The display panel according to claim 1, wherein the display panel comprises a light-emitting device including the first electrode; a light-emitting layer on one side of the first electrode; and a cathode located on a side of the light emitting layer away from the first electrode.
4. The display panel of claim 1, wherein the display panel comprises a plurality of transistors, at least one of the transistors comprising the first electrode.
5. The display panel according to claim 4, wherein the transistor comprises a gate and a source and a drain of a different layer from the gate, and wherein one of the gate, the source, and the drain comprises the first electrode.
6. A method for manufacturing a display panel, comprising:
step S10: providing a substrate;
step S20: preparing a first electrode on the surface of the substrate;
the first electrode comprises a graphene layer, wherein the graphene layer comprises cracks irregularly arranged and a plurality of conductive particles positioned in the cracks.
7. The method according to claim 6, wherein the conductive particles include gold nanoparticles, and the step S20 further includes:
step S21: preparing a graphene film on the surface of the substrate, and performing first drying treatment on the graphene film to prepare and form the graphene layer comprising the cracks;
step S22: and placing the substrate in a chloroauric acid solution for soaking treatment, and then carrying out secondary drying treatment on the substrate to decompose the conductive particles, wherein the conductive particles are positioned in the cracks to prepare and form the first electrode.
8. The preparation method according to claim 7, wherein the baking temperature in the first baking treatment is 50 ℃ to 200 ℃, and the baking time is 2 minutes to 120 minutes; the baking temperature in the second drying treatment is 60-180 ℃, and the baking time is 10-120 minutes; the soaking time of the soaking treatment is 1-60 minutes.
9. The method of claim 7, wherein the chloroauric acid solution comprises chloroauric acid and a polar solvent.
10. The method according to claim 7, wherein the chloroauric acid solution contains gold chloride, and the concentration of the gold chloride is 0.1mg/ml to 10 mg/ml.
CN202010967785.5A 2020-09-15 2020-09-15 Display panel and preparation method thereof Pending CN112086580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010967785.5A CN112086580A (en) 2020-09-15 2020-09-15 Display panel and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010967785.5A CN112086580A (en) 2020-09-15 2020-09-15 Display panel and preparation method thereof

Publications (1)

Publication Number Publication Date
CN112086580A true CN112086580A (en) 2020-12-15

Family

ID=73737146

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010967785.5A Pending CN112086580A (en) 2020-09-15 2020-09-15 Display panel and preparation method thereof

Country Status (1)

Country Link
CN (1) CN112086580A (en)

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347143A (en) * 2011-07-11 2012-02-08 中国科学院上海硅酸盐研究所 Graphene composite porous counter electrode, preparation method and application thereof
CN102629579A (en) * 2011-09-29 2012-08-08 京东方科技集团股份有限公司 Flexible TFT array substrate and manufacturing method thereof and display device
CN103028737A (en) * 2012-12-21 2013-04-10 中国科学院半导体研究所 Method for preparing graphene-metal nano particle composite material
CN103215548A (en) * 2013-04-24 2013-07-24 厦门烯成新材料科技有限公司 Preparation method of metal nanoparticles doped graphene
US20140159181A1 (en) * 2012-12-11 2014-06-12 Samsung Electronics Co., Ltd. Graphene-nanoparticle structure and method of manufacturing the same
CN104701546A (en) * 2013-12-06 2015-06-10 北京化工大学 Porous graphene nanosheet, preparation method and application of porous graphene nanosheet as electrode material
CN105789593A (en) * 2016-04-20 2016-07-20 浙江大学 Three-dimensional graphene composite electrode with Ni3S2 nanoparticle-loaded surface, preparation method and application
US20170162291A1 (en) * 2015-12-03 2017-06-08 Aruna Zhamu Highly conducting and oriented graphene film and production process
CN107123817A (en) * 2017-04-11 2017-09-01 浙江工业大学 A kind of three metal alloy support type graphene nano Porous materials and its preparation method and application
CN107946086A (en) * 2017-12-09 2018-04-20 北京化工大学 It is a kind of using graphene as full carbon resistance rod of ultracapacitor flexible self-supporting of binding agent and preparation method thereof
CN108155297A (en) * 2016-12-05 2018-06-12 北京大学 A kind of method that graphene top electrode is prepared using laminating method
CN108467026A (en) * 2018-01-16 2018-08-31 中国科学院上海应用物理研究所 Porous graphene material and its preparation method and application
CN108659622A (en) * 2017-03-28 2018-10-16 京东方科技集团股份有限公司 Electrically conductive ink, display base plate and its manufacturing method and display device
CN109205595A (en) * 2018-09-27 2019-01-15 青岛大学 Highly conductive Flexible graphene pipe and preparation method thereof
CN208622775U (en) * 2018-08-03 2019-03-19 云谷（固安）科技有限公司 Display panel and display device
CN110982325A (en) * 2019-12-31 2020-04-10 上海特栎材料科技有限公司 Antireflection, antistatic and super-hydrophilic coating composition, coating and product
CN110993820A (en) * 2019-12-05 2020-04-10 京东方科技集团股份有限公司 Display panel and manufacturing method thereof, and manufacturing method of electrode
CN111128634A (en) * 2019-12-10 2020-05-08 深圳先进技术研究院 Graphene field emission cathode and preparation method thereof
CN111154461A (en) * 2020-01-06 2020-05-15 宁波石墨烯创新中心有限公司 Oriented assembly graphene, graphene-carbon nanotube composite heat-conducting film and preparation method thereof
CN111593347A (en) * 2020-06-02 2020-08-28 太原理工大学 Flexible composite film material and preparation method thereof

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347143A (en) * 2011-07-11 2012-02-08 中国科学院上海硅酸盐研究所 Graphene composite porous counter electrode, preparation method and application thereof
CN102629579A (en) * 2011-09-29 2012-08-08 京东方科技集团股份有限公司 Flexible TFT array substrate and manufacturing method thereof and display device
US20140159181A1 (en) * 2012-12-11 2014-06-12 Samsung Electronics Co., Ltd. Graphene-nanoparticle structure and method of manufacturing the same
CN103028737A (en) * 2012-12-21 2013-04-10 中国科学院半导体研究所 Method for preparing graphene-metal nano particle composite material
CN103215548A (en) * 2013-04-24 2013-07-24 厦门烯成新材料科技有限公司 Preparation method of metal nanoparticles doped graphene
CN104701546A (en) * 2013-12-06 2015-06-10 北京化工大学 Porous graphene nanosheet, preparation method and application of porous graphene nanosheet as electrode material
US20170162291A1 (en) * 2015-12-03 2017-06-08 Aruna Zhamu Highly conducting and oriented graphene film and production process
CN105789593A (en) * 2016-04-20 2016-07-20 浙江大学 Three-dimensional graphene composite electrode with Ni3S2 nanoparticle-loaded surface, preparation method and application
CN108155297A (en) * 2016-12-05 2018-06-12 北京大学 A kind of method that graphene top electrode is prepared using laminating method
CN108659622A (en) * 2017-03-28 2018-10-16 京东方科技集团股份有限公司 Electrically conductive ink, display base plate and its manufacturing method and display device
CN107123817A (en) * 2017-04-11 2017-09-01 浙江工业大学 A kind of three metal alloy support type graphene nano Porous materials and its preparation method and application
CN107946086A (en) * 2017-12-09 2018-04-20 北京化工大学 It is a kind of using graphene as full carbon resistance rod of ultracapacitor flexible self-supporting of binding agent and preparation method thereof
CN108467026A (en) * 2018-01-16 2018-08-31 中国科学院上海应用物理研究所 Porous graphene material and its preparation method and application
CN208622775U (en) * 2018-08-03 2019-03-19 云谷（固安）科技有限公司 Display panel and display device
CN109205595A (en) * 2018-09-27 2019-01-15 青岛大学 Highly conductive Flexible graphene pipe and preparation method thereof
CN110993820A (en) * 2019-12-05 2020-04-10 京东方科技集团股份有限公司 Display panel and manufacturing method thereof, and manufacturing method of electrode
CN111128634A (en) * 2019-12-10 2020-05-08 深圳先进技术研究院 Graphene field emission cathode and preparation method thereof
CN110982325A (en) * 2019-12-31 2020-04-10 上海特栎材料科技有限公司 Antireflection, antistatic and super-hydrophilic coating composition, coating and product
CN111154461A (en) * 2020-01-06 2020-05-15 宁波石墨烯创新中心有限公司 Oriented assembly graphene, graphene-carbon nanotube composite heat-conducting film and preparation method thereof
CN111593347A (en) * 2020-06-02 2020-08-28 太原理工大学 Flexible composite film material and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MENGZHUWEI等: "Flexible transparent electrodes for organic light-emitting diodes simply fabricated with AuCl3-modied graphene", 《ORGANIC ELECTROINCS》 *
MENGZHUWEI等: "Flexible transparent electrodes for organic light-emitting diodes simply fabricated with AuCl3-modied graphene", 《ORGANIC ELECTROINCS》, 7 September 2018 (2018-09-07), pages 72 - 75 *

Similar Documents

Publication Publication Date Title
USRE45235E1 (en) Organic light emitting diode display and fabricating method thereof
KR100841170B1 (en) Method of preparing low resistance metal line, patterned metal line structure, and display devices using the same
KR101313124B1 (en) Manufacturing method of thin film transistor, display device using thin film transistor, and electronic device incorporating display device
US20130078436A1 (en) Transparent electrode laminate
WO2019071751A1 (en) Tft substrate, manufacturing method thereof and oled panel manufacturing method
CN101064318A (en) Thin film transistor array panel for display and manufacturing method of the same
JP6593902B2 (en) Flexible substrate peeling method
US10692901B2 (en) Array substrate and manufacturing method thereof
US10147900B2 (en) Method for manufacturing integrated substrate for organic light emitting diode, organic light emitting diode, and method for manufacturing organic light emitting diode
KR20060045745A (en) Method for manufacturing an organic electroluminescent element, system for manufacturing an organic electroluminescent element, and electronic equipment
CN108899346B (en) Display panel and display device
CN112310310A (en) Organic light emitting diode display and method of fabricating the same
US11654657B2 (en) Through glass via fabrication using a protective material
EP3252802B1 (en) Thin film transistor manufacturing method and array substrate manufacturing method
EP3333900A1 (en) Thin film transistor and array substrate, and manufacturing method thereof, and display device
US20140197424A1 (en) Optoelectric device and method for manufacturing the same
CN112259694A (en) Display panel and manufacturing method thereof
JP2013516735A (en) Method for maskless manufacturing of organic light emitting diode device
CN107591416B (en) Array substrate and manufacturing method thereof
CN111463248A (en) Array substrate, manufacturing method thereof and display panel
CN112086580A (en) Display panel and preparation method thereof
US20120299050A1 (en) Electro-optical device, electrode therefore, and method and apparatus of manufacturing an electrode and the electro-optical device provided therewith
JP4506460B2 (en) Method for manufacturing organic electroluminescence device and electronic device
CN112038506B (en) Display substrate manufacturing method, display substrate, display panel and display device
KR20200041411A (en) Echtant and method for manufacturing display device using the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20201215

RJ01 Rejection of invention patent application after publication