CN112072249A - Broadband slow wave substrate integrated waveguide with high slow wave coefficient - Google Patents
Broadband slow wave substrate integrated waveguide with high slow wave coefficient Download PDFInfo
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- CN112072249A CN112072249A CN202010700373.5A CN202010700373A CN112072249A CN 112072249 A CN112072249 A CN 112072249A CN 202010700373 A CN202010700373 A CN 202010700373A CN 112072249 A CN112072249 A CN 112072249A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
Abstract
The invention belongs to the technical field of substrate integrated waveguide transmission lines, and discloses a broadband slow wave substrate integrated waveguide with a high slow wave coefficient, which comprises a first dielectric substrate, a second dielectric substrate, a slow wave structure, a metalized through hole side wall, a coplanar waveguide-slow wave substrate integrated waveguide transition and a coplanar waveguide transmission line; the upper surface of the first dielectric substrate and the lower surface of the second dielectric substrate are metal layers; the slow wave structure consists of an inductive metalized through hole penetrating through the first dielectric substrate and a short circuit metal patch loaded on the upper surface of the first dielectric substrate; the side wall of the metallized through hole penetrates through the first dielectric substrate and the second dielectric substrate. The invention improves the equivalent magnetic conductivity and the equivalent dielectric constant of the slow wave substrate integrated waveguide at the same time, so that the change of wave impedance is small, the impedance matching of the substrate integrated waveguide is hardly influenced, and the working bandwidth can be widened; meanwhile, the slow wave coefficient of the slow wave substrate integrated waveguide can be further increased, and miniaturization and integration are further realized.
Description
Technical Field
The invention belongs to the technical field of substrate integrated waveguide transmission lines, and particularly relates to a broadband slow-wave substrate integrated waveguide with a high slow-wave coefficient.
Background
At present, a Substrate Integrated Waveguide (SIW) has the advantages of low loss of a metal Waveguide and high integration of a microstrip line, two rows of metalized through holes are loaded on a dielectric Substrate to simulate a narrow wall of the metal Waveguide, metal floors are printed on the upper surface and the lower surface of a medium to simulate a wide wall of the metal Waveguide, and electromagnetic waves are limited in an area surrounded by the floors and the through holes, which is formally proposed by kukou in 2001 for the first time. However, SIW is still large in size with the potential for further miniaturization. Common substrate integrated waveguide miniaturization technologies include folded substrate integrated waveguide, substrate integrated ridge waveguide, half-mode substrate integrated waveguide, etc., however, the above miniaturization technologies can only reduce the lateral dimension of the substrate integrated waveguide, and cannot shorten the longitudinal dimension. One way to reduce both the lateral and longitudinal dimensions is to introduce slow wave structures into the substrate integrated waveguide. The slow wave structure can introduce extra distributed capacitance and inductance on a transmission line, increase the equivalent dielectric constant and magnetic conductivity of the transmission line, reduce the waveguide wavelength on the transmission line, reduce the phase velocity of electromagnetic waves on the transmission line, and reduce the physical sizes of an antenna and a device under the condition that the electrical length is not changed.
In 2014, Alejandro Niembro-Mart i n et al first proposed a Slow-Wave substrate integrated waveguide (Slow-Wave SIW, SW-SIW), through loading the metallized blind hole in the substrate integrated waveguide, make the electric field in the substrate integrated waveguide concentrate between metal blind hole and upper floor, improved the distribution parallel capacitance and the equivalent dielectric constant of substrate integrated waveguide, reduced cutoff frequency, shortened the waveguide wavelength, under the equal circumstances of electric length, shortened the horizontal and longitudinal dimension of substrate integrated waveguide. Then, various slow wave substrate integrated waveguides were designed, such as slow wave substrate integrated waveguides based on meander line, lumped inductance and complementary split ring resonator loading.
However, the slow-wave substrate integrated waveguide commonly used in the industry only increases the equivalent dielectric constant or the equivalent magnetic permeability by loading the slow-wave structure. The wave impedance of the substrate integrated waveguide is in negative correlation with the equivalent dielectric constant and in positive correlation with the magnetic permeability, and if the equivalent dielectric constant or the equivalent magnetic permeability is only improved, the wave impedance can be changed to influence the impedance matching of the substrate integrated waveguide. The working bandwidth of the slow wave substrate integrated waveguide in the industry at present is generally less than frequency doubling (under the condition of 40% reduction of the transverse and longitudinal dimensions). Therefore, how to further improve the slow wave coefficient on the premise of keeping a wider operating bandwidth is a difficult point in designing the slow wave substrate integrated waveguide. The technical problem is solved, and the miniaturization and integration of the microwave millimeter wave antenna and the device designed based on the invention are favorably realized on the premise of keeping the original working bandwidth.
On the contrary, if the equivalent magnetic permeability and the equivalent dielectric constant are simultaneously improved, the change of wave impedance is small, the impedance matching of the substrate integrated waveguide is hardly influenced, and the working bandwidth of the substrate integrated waveguide can be widened. Moreover, since the phase velocity is inversely related to the equivalent dielectric constant and the equivalent permeability, the increase of the phase velocity and the equivalent permeability can further increase the slow-wave coefficient of the slow-wave substrate integrated waveguide.
Through the above analysis, the problems and defects of the prior art are as follows: the traditional slow wave substrate integrated waveguide with high slow wave coefficient has poor impedance matching and narrow working bandwidth.
The difficulty in solving the above problems and defects is: the traditional slow-wave substrate integrated waveguide with high slow-wave coefficient can only improve the equivalent dielectric constant or the equivalent magnetic permeability, which can greatly change the wave impedance of the slow-wave substrate integrated waveguide, so that the impedance is mismatched, and the working bandwidth is narrow. If the wave impedance is not changed greatly, the equivalent dielectric constant and the equivalent permeability need to be improved simultaneously, and the implementation mode of the scheme is not reported in the industry and has high technical difficulty.
The significance of solving the problems and the defects is as follows: the invention can effectively reduce the transverse and longitudinal dimensions of the substrate integrated waveguide, has higher slow wave coefficient, and solves the problem of narrow working bandwidth of the high-slow wave coefficient slow wave substrate integrated waveguide.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a slow wave substrate integrated waveguide with a high slow wave coefficient.
The invention is realized by the following steps that a slow wave substrate integrated waveguide with a high slow wave coefficient is provided with: the waveguide transmission line comprises a first dielectric substrate, a second dielectric substrate, a slow wave structure, a metalized through hole side wall, a coplanar waveguide-slow wave substrate integrated waveguide transition and coplanar waveguide transmission lines;
the slow wave structure consists of a first metalized through hole penetrating through the first dielectric substrate and a short circuit metal patch arranged on the upper surface of the first dielectric substrate; the first metallized through holes and the short-circuit metal patches are periodically distributed along the longitudinal direction of the broadband slow-wave substrate integrated waveguide; the first metallization through hole penetrates through the first medium substrate and is connected with the short circuit metal patch.
Further, the first dielectric substrate and the second dielectric substrate are made of Rogers4350B high-frequency plates, the relative dielectric constant is 3.66, and the loss tangent is 0.0037; the thickness of the first dielectric substrate is 0.762mm, and the thickness of the second dielectric substrate is 0.254 mm; the lower surface of the first dielectric substrate and the upper surface of the second dielectric substrate are respectively provided with a first metal layer and a second metal layer.
Furthermore, the first metalized through holes and the short circuit metal patches are periodically distributed along the longitudinal direction of the broadband slow wave substrate integrated waveguide, the number of the first metalized through holes in each periodic unit is 5, and the number of the short circuit metal patches is 1;
the diameter of the first metallized through holes is 0.4mm, the transverse spacing between adjacent metallized through holes is 0.7mm, and the longitudinal spacing is 0.8 mm.
Further, the short circuit metal patch is rectangular, and has a length of 4.6mm and a width of 0.6 mm.
Furthermore, the side walls of the two rows of metallized through holes are longitudinally and symmetrically distributed relative to the broadband slow-wave substrate integrated waveguide, the transverse distance is 5.7mm, the longitudinal distance is 0.8mm, and the diameter of the through hole is 0.4 mm. The longitudinal distance is far smaller than the working wavelength, and the electromagnetic waves are prevented from leaking outwards through the through hole gap.
Furthermore, the coplanar waveguide-slow wave substrate integrated waveguide transition is composed of two first gaps arranged on the upper surface of the second medium substrate, a first central conduction band, a second metalized through hole penetrating through the first medium substrate, metalized through hole side walls penetrating through the first medium substrate and the second medium substrate, and a first metal layer arranged on the lower surface of the first medium substrate.
Further, the width of the first central conduction band is 0.6mm at minimum and 4.5mm at maximum; the width of the first slit is at least 0.1mm and at most 0.2 mm.
Further, the characteristic impedance of the coplanar waveguide transmission line is 50 Ω, and the length is 1.5 mm; the width of the second central conduction band 14 of the coplanar waveguide transmission line is 0.6mm, and the width of the slot is 0.1 mm.
Further, the width of the second central conduction band of the coplanar waveguide transmission line is linearly shortened from 0.6mm to 0.4mm, and the width of the second slot is linearly increased from 0.1mm to 0.2mm, as viewed from the feed port.
It is another object of the present invention to provide a millimeter wave communication system mounted with the slow wave substrate integrated waveguide having a high slow wave coefficient.
By combining all the technical schemes, the invention has the advantages and positive effects that: the first metallized through hole can provide inductive loading for the slow wave substrate integrated waveguide, and can increase equivalent magnetic conductivity; the short circuit metal patch can provide capacitive loading for the slow wave substrate integrated waveguide, and can increase the equivalent dielectric constant; the equivalent magnetic conductivity and the equivalent dielectric constant are increased at the same time, so that the change of wave impedance is small, the impedance matching of the slow wave substrate integrated waveguide is hardly influenced, and a high slow wave coefficient is obtained on the premise of keeping a wide working bandwidth.
The invention improves the equivalent magnetic conductivity and the equivalent dielectric constant of the slow wave substrate integrated waveguide at the same time, so that the change of wave impedance is small, the impedance matching of the substrate integrated waveguide is hardly influenced, and the working bandwidth of the substrate integrated waveguide can be widened. Moreover, since the phase velocity is inversely related to the equivalent dielectric constant and the equivalent permeability, the improvement of the phase velocity and the equivalent permeability can further increase the slow wave coefficient of the slow wave substrate integrated waveguide, thereby further realizing miniaturization and integration.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained from the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a slow-wave substrate integrated waveguide with a high slow-wave coefficient according to an embodiment of the present invention;
in fig. 1: 1. a first dielectric substrate; 2. a second dielectric substrate; 3. a slow wave structure; 4. metallizing a sidewall of the via; 5. transition of coplanar waveguide-slow wave substrate integrated waveguide; 6. a coplanar waveguide transmission line; 7. a first metallized via; 8. short-circuit metal patches; 9. a first metal layer; 10. a second metal layer; 11. a first slit; 12. a first central conduction band; 13. a second metallized via; 14. a second central conduction band; 15. a second slit.
FIG. 2 is a transverse cross-sectional view of a slow wave substrate integrated waveguide with a high slow wave coefficient provided by an embodiment of the present invention.
FIG. 3 is a cross-sectional electric field distribution diagram of a slow-wave substrate integrated waveguide with a high slow-wave coefficient according to an embodiment of the present invention.
FIG. 4 is a cross-sectional magnetic field distribution diagram of a slow wave substrate integrated waveguide with a high slow wave coefficient provided by an embodiment of the present invention.
FIG. 5 is an H-plane electric field distribution diagram of a slow-wave substrate integrated waveguide with a high slow-wave coefficient according to an embodiment of the present invention.
FIG. 6 is an H-plane magnetic field distribution diagram of a slow-wave substrate integrated waveguide with a high slow-wave coefficient according to an embodiment of the present invention.
FIG. 7 is a graph comparing the phase velocity of a slow wave integrated waveguide with a high slow wave coefficient provided by an embodiment of the present invention with that of a conventional integrated waveguide.
FIG. 8 is a graph comparing S-parameters of a slow-wave substrate integrated waveguide with a high slow-wave coefficient provided by an embodiment of the present invention and a conventional substrate integrated waveguide.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In view of the problems of the prior art, the present invention provides a slow-wave substrate integrated waveguide with high slow-wave coefficient, and the present invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, a slow-wave substrate integrated waveguide with a high slow-wave coefficient provided by an embodiment of the present invention includes: the device comprises a first dielectric substrate 1, a second dielectric substrate 2, a slow wave structure 3, a metalized through hole side wall 4, a coplanar waveguide-slow wave substrate integrated waveguide transition 5 and a coplanar waveguide transmission line 6. The first dielectric substrate 1 and the second dielectric substrate 2 both adopt Rogers4350B high-frequency plates, the relative dielectric constant is 3.66, and the loss tangent is 0.0037. The thickness of the first dielectric substrate 1 is 0.762mm, and the thickness of the second dielectric substrate 2 is 0.254 mm.
In a preferred embodiment of the invention, the slow-wave structure 3 is composed of a first metalized via 7 passing through the first dielectric substrate 1 and a short-circuit metal patch 8 disposed on the upper surface of the first dielectric substrate 1. The first metalized through holes 7 and the short-circuit metal patches 8 are periodically distributed along the longitudinal direction of the broadband slow-wave substrate integrated waveguide, the number of the first metalized through holes 7 in each periodic unit is 5, and the number of the short-circuit metal patches 8 is 1. The first metalized through holes 7 penetrate through the first dielectric substrate 1 to be connected with the short circuit metal patches 8, the diameter of each first metalized through hole 7 is 0.4mm, the transverse distance between every two adjacent metalized through holes is 0.7mm, and the longitudinal distance between every two adjacent metalized through holes is 0.8 mm. The short-circuit metal patch 8 is rectangular in shape, 4.6mm in length and 0.6mm in width.
In the preferred embodiment of the invention, the first dielectric substrate 1 and the second dielectric substrate 2 are arranged by two rows of metalized through hole side walls 4 which are symmetrically distributed in the longitudinal direction of the broadband slow wave substrate integrated waveguide, the transverse distance is 5.7mm, the longitudinal distance is 0.8mm, and the diameter of each through hole is 0.4 mm. The longitudinal distance is far smaller than the working wavelength, and the electromagnetic waves are prevented from leaking outwards through the through hole gap.
In the preferred embodiment of the present invention, in order to provide convenience for testing the broadband slow-wave substrate integrated waveguide, the present invention provides a coplanar waveguide-slow-wave substrate integrated waveguide transition 5, which is composed of two first slits 11 disposed on the upper surface of the second dielectric substrate 2, a first central conduction band 12, a second metalized via 13 passing through the first dielectric substrate 1, a metalized via sidewall 4 passing through the first dielectric substrate 1 and the second dielectric substrate 2, and a first metal layer 9 disposed on the lower surface of the first dielectric substrate 1.
In a preferred embodiment of the invention, the width of the first central conduction band 12 is at least 0.6mm and at most 4.5 mm; the width of the first slit 11 is at least 0.1mm and at most 0.2 mm. The characteristic impedance of the coplanar waveguide transmission line 6 is 50 Ω and the length is 1.5 mm. The width of the second central conduction band 14 of the coplanar waveguide transmission line 6 is 0.6mm, and the width of the slot is 0.1 mm. In order to improve impedance matching, the end of the coplanar waveguide transmission line 6 is tapered. The width of the second central conduction band 14 of the coplanar waveguide transmission line 6 is linearly reduced from 0.6mm to 0.4mm, and the width of the second slot 15 is linearly increased from 0.1mm to 0.2mm, as viewed from the feed port.
The technical effects of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 3, the cross-sectional electric field distribution diagram of the slow-wave substrate integrated waveguide with high slow-wave coefficient provided by the embodiment of the invention, the electric field is concentrated between the short-circuit metal patch and the upper metal ground of the broadband slow-wave substrate integrated waveguide, which illustrates that the equivalent dielectric constant is improved by the invention.
As shown in fig. 4, the cross-sectional magnetic field distribution diagram of the slow-wave substrate integrated waveguide with a high slow-wave coefficient provided by the embodiment of the present invention, in which the magnetic field is concentrated around the inductive metal via, illustrates that the equivalent permeability is improved by the present invention.
As shown in FIGS. 5 and 6, the H-plane electric field and magnetic field distribution diagram of the slow-wave substrate integrated waveguide with high slow-wave coefficient provided by the embodiment of the invention illustrates the operation mode TE of the invention10Mode(s).
As shown in fig. 7, a phase velocity comparison graph of the slow-wave substrate integrated waveguide with a high slow-wave coefficient provided by the embodiment of the present invention and the conventional substrate integrated waveguide shows that the cut-off frequency of the present invention is reduced by 53%, the phase velocity is reduced by 73%, and the miniaturization of the transverse dimension of 53% and the miniaturization of the longitudinal dimension of 73% can be realized on the premise of the given cut-off frequency and the operating frequency.
As shown in fig. 8, a comparison graph of S parameters of the slow-wave substrate integrated waveguide with a high slow-wave coefficient provided by the embodiment of the present invention and the conventional substrate integrated waveguide shows that the cut-off frequency of the present invention is reduced by 53%, the operating frequency band is 7.0-18.8GHz, and the relative bandwidth is 91.5%.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The above description is only for the purpose of illustrating the present invention and the appended claims are not to be construed as limiting the scope of the invention, which is intended to cover all modifications, equivalents and improvements that are within the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A broadband slow-wave substrate integrated waveguide with a high slow-wave coefficient is characterized in that the broadband slow-wave substrate integrated waveguide with the high slow-wave coefficient is provided with: the waveguide transmission line comprises a first dielectric substrate, a second dielectric substrate, a slow wave structure, a metalized through hole side wall, a coplanar waveguide-slow wave substrate integrated waveguide transition and coplanar waveguide transmission lines;
the slow wave structure consists of a first metalized through hole penetrating through the first dielectric substrate and a short circuit metal patch arranged on the upper surface of the first dielectric substrate; the first metallized through holes and the short-circuit metal patches are periodically distributed along the longitudinal direction of the broadband slow-wave substrate integrated waveguide; the first metallization through hole penetrates through the first medium substrate and is connected with the short circuit metal patch.
2. The broadband slow-wave substrate integrated waveguide with the high slow-wave coefficient according to claim 1, wherein the first dielectric substrate and the second dielectric substrate are made of Rogers4350B high-frequency plates, the relative dielectric constant is 3.66, and the loss tangent is 0.0037; the thickness of the first dielectric substrate is 0.762mm, and the thickness of the second dielectric substrate is 0.254 mm; the lower surface of the first dielectric substrate and the upper surface of the second dielectric substrate are respectively provided with a first metal layer and a second metal layer.
3. The broadband slow-wave substrate integrated waveguide with high slow-wave coefficient as claimed in claim 1, wherein the first metalized through holes and the short-circuit metal patches are periodically distributed along the longitudinal direction of the broadband slow-wave substrate integrated waveguide, the number of the first metalized through holes in each periodic unit is 5, and the number of the short-circuit metal patches is 1; the diameter of the first metallized through holes is 0.4mm, the transverse spacing between adjacent metallized through holes is 0.7mm, and the longitudinal spacing is 0.8 mm.
4. The integrated waveguide of claim 1, wherein the short-circuit metal patch is rectangular in shape, 4.6mm in length and 0.6mm in width.
5. The broadband slow wave substrate integrated waveguide with a high slow wave coefficient of claim 1, wherein the two rows of metallized through hole sidewalls are symmetrically distributed with respect to the longitudinal direction of the broadband slow wave substrate integrated waveguide, the lateral spacing is 5.7mm, the longitudinal spacing is 0.8mm, and the through hole diameter is 0.4 mm.
6. The wideband slow wave substrate integrated waveguide with high slow wave coefficient of claim 1, wherein the coplanar waveguide-slow wave substrate integrated waveguide transition is composed of two first slits disposed on the upper surface of the second dielectric substrate, a first central conduction band, a second metalized via through the first dielectric substrate, metalized via sidewalls through the first dielectric substrate and the second dielectric substrate, and a first metal layer disposed on the lower surface of the first dielectric substrate.
7. The broadband slow-wave substrate integrated waveguide with high slow-wave coefficient of claim 6, wherein the width of the first central conduction band is at least 0.6mm and at most 4.5 mm; the width of the first slit is at least 0.1mm and at most 0.2 mm.
8. The integrated waveguide with high slow wave coefficient broadband slow wave substrate of claim 1, wherein the coplanar waveguide transmission line has a characteristic impedance of 50 Ω and a length of 1.5 mm; the width of the second central conduction band 14 of the coplanar waveguide transmission line is 0.6mm, and the width of the slot is 0.1 mm.
9. The broadband slow-wave substrate integrated waveguide with high slow-wave coefficient of claim 8, wherein the width of the second central conduction band of the coplanar waveguide transmission line is linearly shortened from 0.6mm to 0.4mm, and the width of the second slot is linearly increased from 0.1mm to 0.2mm, as viewed from the feed port.
10. A millimeter wave communication system, characterized in that the millimeter wave communication system is equipped with the broadband slow-wave substrate integrated waveguide having a high slow-wave coefficient as claimed in any one of claims 1 to 9.
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| CN113036334A (en) * | 2021-03-24 | 2021-06-25 | 南通大学 | Bandwidth-controllable millimeter wave filter based on plasmon |
| CN113285197A (en) * | 2021-05-20 | 2021-08-20 | 西华大学 | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof |
| CN113889737A (en) * | 2021-09-30 | 2022-01-04 | 西华大学 | Substrate integrated waveguide parameter optimization method and structure based on reinforcement learning |
| CN113922075A (en) * | 2021-10-13 | 2022-01-11 | 西华大学 | Slow wave substrate integrated waveguide duplex antenna based on high-order mode |
| CN113964462A (en) * | 2021-10-26 | 2022-01-21 | 重庆邮电大学 | Small broadband phase shifter based on slow-wave half-mode substrate integrated waveguide |
| CN114883766A (en) * | 2022-04-15 | 2022-08-09 | 大连海事大学 | Dual-mode substrate integrated waveguide filter based on slow wave structure |
| US11450937B2 (en) | 2020-12-20 | 2022-09-20 | Vayyar Imaging Ltd. | Printed circuit board including a substrate integrated waveguide having channels formed by vertically overlapping cylindrical cavities |
| CN117497990A (en) * | 2024-01-02 | 2024-02-02 | 上海安其威微电子科技有限公司 | Slow wave delay line and chip |
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| US11450937B2 (en) | 2020-12-20 | 2022-09-20 | Vayyar Imaging Ltd. | Printed circuit board including a substrate integrated waveguide having channels formed by vertically overlapping cylindrical cavities |
| US11909089B2 (en) | 2020-12-20 | 2024-02-20 | Vayyar Imaging Ltd. | Substrate integrated waveguide (SIW) including fences with wall strips and ridge strips, where the ridge strips extend further into the SIW than the wall strips |
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| CN113285197A (en) * | 2021-05-20 | 2021-08-20 | 西华大学 | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof |
| CN113285197B (en) * | 2021-05-20 | 2022-04-15 | 西华大学 | Three-dimensional impedance network double-side loaded slow wave substrate integrated waveguide and design method thereof |
| CN113889737A (en) * | 2021-09-30 | 2022-01-04 | 西华大学 | Substrate integrated waveguide parameter optimization method and structure based on reinforcement learning |
| CN113922075B (en) * | 2021-10-13 | 2023-09-19 | 西华大学 | Slow wave substrate integrated waveguide duplex antenna based on high-order mode |
| CN113922075A (en) * | 2021-10-13 | 2022-01-11 | 西华大学 | Slow wave substrate integrated waveguide duplex antenna based on high-order mode |
| CN113964462B (en) * | 2021-10-26 | 2022-06-10 | 重庆邮电大学 | Small broadband phase shifter based on slow-wave half-mode substrate integrated waveguide |
| CN113964462A (en) * | 2021-10-26 | 2022-01-21 | 重庆邮电大学 | Small broadband phase shifter based on slow-wave half-mode substrate integrated waveguide |
| CN114883766A (en) * | 2022-04-15 | 2022-08-09 | 大连海事大学 | Dual-mode substrate integrated waveguide filter based on slow wave structure |
| CN114883766B (en) * | 2022-04-15 | 2024-02-02 | 大连海事大学 | Dual-mode substrate integrated waveguide filter based on slow wave structure |
| CN117497990A (en) * | 2024-01-02 | 2024-02-02 | 上海安其威微电子科技有限公司 | Slow wave delay line and chip |
| CN117497990B (en) * | 2024-01-02 | 2024-03-08 | 上海安其威微电子科技有限公司 | Slow wave delay line and chip |
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Application publication date: 20201211 |
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