CN112063984B - Fluorinated amorphous carbon film and preparation method and application thereof - Google Patents
Fluorinated amorphous carbon film and preparation method and application thereof Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Abstract
The invention discloses a fluorinated amorphous carbon film, a preparation method and application thereof, and belongs to the technical field of film materials. The fluorinated amorphous carbon film is composed of a base layer and a fluorinated amorphous carbon film deposited on the surface thereof. The preparation method comprises the following steps: cleaning the basal layer and drying; polishing the polytetrafluoroethylene target and the graphite target, and cleaning; placing the pretreated basal layer and target material into a coating chamber, vacuumizing the background, and introducing inert gas to perform pre-sputtering; and respectively sputtering by using radio frequency and direct current, and co-sputtering on the surface of the basal layer to obtain the fluorinated amorphous carbon film. The fluorinated amorphous carbon film disclosed by the invention has the advantages of simple preparation method, good practicability, strong repeatability, controllable film component height and the like, and has potential application prospect in the field of high-voltage insulating materials.
Description
Technical Field
The invention relates to the technical field of film materials, in particular to a fluorinated amorphous carbon film, a preparation method and application thereof.
Background
When an initial electron of a certain energy or velocity strikes the surface of a material, it causes electrons to escape from the bombarded surface, a phenomenon known as secondary electron emission. The secondary electron emission is a complex scattering process generated on the shallow surface layer of the material under the induction of initial electrons, and has direct influence on the insulation strength of vacuum high-voltage electrical equipment, and meanwhile, the secondary electron emission also brings a series of problems of micro discharge phenomenon, particle accelerator electron cloud effect, dielectric window breakdown damage, surface layer even deep electrification of a spacecraft and the like of a space high-power microwave device, and the problems cause the equipment performance to be damaged, the service life to be reduced, and even the equipment to be permanently disabled. The multiplication capacity of electrons is usually evaluated by secondary electron emission coefficient, and the secondary electron emission coefficient is closely related to the shallow surface state (microcosmic appearance, chemical components, microstructure and the like) of the material, so how to prepare a film material with highly controllable secondary electron emission characteristics, and effectively reduce the secondary electron emission coefficient of the film material becomes a key for improving the operation stability of vacuum equipment.
Silver, allotin and titanium nitride are commonly used as film materials for inhibiting secondary electron emission at present, but due to surface oxidation, dirt adhesion, adsorption of water molecules, hydroxyl radicals and the like, the mean scattering free path of secondary electrons in the film is prolonged, the escape capacity is enhanced, and the effect of inhibiting secondary electron emission of the metal and semiconductor film is poor. In addition, because theoretical analysis on secondary electron emission process is less, and the preparation process is limited, a film secondary electron emission characteristic regulation method of the system is difficult to establish, and the preparation of the film with low secondary electron emission coefficient still needs to seek a great breakthrough.
Disclosure of Invention
In view of the above, the present invention aims to overcome the defects in the prior art, and to provide a fluorinated amorphous carbon film, and a preparation method and application thereof.
In order to achieve the above purpose, the present invention provides the following technical solutions:
1. the fluorinated amorphous carbon film consists of a basal layer and a fluorinated amorphous carbon film deposited on the surface of the basal layer, wherein the basal layer is a metal sheet, an inorganic film sheet or an organic film sheet.
Preferably, the metal sheet is aluminum, copper or magnesium alloy, the inorganic thin film sheet is monocrystalline silicon sheet or glass slide, and the organic thin film sheet is polytetrafluoroethylene or polyimide.
2. The preparation method of the fluorinated amorphous carbon film comprises the following steps:
1) Pretreatment of a substrate: ultrasonic cleaning and drying are carried out on the basal layer;
2) Target pretreatment: polishing the polytetrafluoroethylene target and the graphite target, and cleaning the polytetrafluoroethylene target and the graphite target by an organic solvent;
3) Pretreatment of a coating chamber: placing the pretreated basal layer and target material into a coating chamber, vacuumizing the background, and introducing inert gas to perform pre-sputtering;
4) Magnetron co-sputtering coating: and simultaneously, co-sputtering on the surface of the basal layer by using radio frequency and direct current sputtering to obtain the fluorinated amorphous carbon film.
Preferably, the preparation method of the fluorinated amorphous carbon film comprises the following steps:
1) Pretreatment of a substrate: sequentially placing the cut basal layer in acetone, absolute ethyl alcohol and pure water for ultrasonic cleaning, and blow-drying in nitrogen flow;
2) Target pretreatment: polishing the polytetrafluoroethylene target and the graphite target by sand paper, and cleaning by absolute ethyl alcohol;
3) Pretreatment of a coating chamber: placing the pretreated substrate layer and target material into a coating chamber, pumping background vacuum into the coating chamber through a mechanical pump and a molecular pump, and introducing argon for pre-sputtering;
4) Magnetron co-sputtering coating: and performing radio frequency sputtering on a polytetrafluoroethylene target, performing direct current sputtering on a graphite target, and performing co-sputtering on the surface of the basal layer to obtain the fluorinated amorphous carbon film.
The ultrasonic cleaning is carried out by sequentially placing the ultrasonic cleaning agent in acetone, absolute ethyl alcohol and pure water so as to remove different impurities on the surface.
Preferably, in the step 1), the base layer is cut to a size of: the ultrasonic cleaning time of acetone, absolute ethyl alcohol and pure water is 20min, the diameter is 6mm, the thickness is 1mm, and the ultrasonic cleaning time is 20min, and the ultrasonic cleaning time is put into a vacuum drying oven for standby after the ultrasonic cleaning time is dried in nitrogen flow.
Preferably, in the step 2), the number of sand paper for polishing the target is 500#, 1000# and 2000#.
Preferably, in the step 3), the background vacuum degree of the coating chamber is 1-5×10 -3 Pa。
More preferably, in the step 3), the background vacuum degree of the coating chamber is 5×10 -3 Pa。
Preferably, in the step 3), the pre-sputtering condition is: keeping the target baffle closed, regulating the flow rate of argon to ensure that the air pressure of the film plating chamber is 0.1-2Pa, the substrate temperature is 20-80 ℃, the target-base distance is 20-300 mm, the direct current power is 10-500W, the radio frequency power is 10-300W, and the time is 5-150 min.
More preferably, in the step 3), the pre-sputtering conditions are: keeping the target baffle closed, regulating the flow rate of argon to ensure that the air pressure of the film plating chamber is 0.5Pa, the substrate temperature is 50 ℃, the target-base distance is 100mm, the direct current power is 50W, the radio frequency power is 100W, and the time is 20min.
Preferably, in the step 4), the argon flow rate is regulated to make the air pressure of the film plating chamber be 0.1-2Pa, then the direct current and radio frequency power sources are turned on to make the graphite target and the polytetrafluoroethylene target glow in sequence, the radio frequency power is regulated to be 10-300W, the direct current power is 10-500W, meanwhile, the baffles of the two targets are turned on, the rotating speed of the basal layer is kept at 30-150 rpm, and the sputtering time is 5-150 min.
More preferably, in the step 4), the argon flow rate is adjusted to make the air pressure of the film plating chamber be 0.25-1.5Pa, then the direct current and radio frequency power sources are turned on to make the graphite target and the polytetrafluoroethylene target start to glow in sequence, the radio frequency power is adjusted to be 100W, the direct current power is 25-125W, meanwhile, the baffles of the two targets are turned on, the rotating speed of the basal layer is kept to be 90rpm, and the sputtering time is 100min.
3. The fluorinated amorphous carbon film is applied to high-voltage insulating materials or space microwave components. Wherein, as high-voltage insulating material, the surface flashover voltage of polymers such as epoxy resin, polytetrafluoroethylene, polyimide and the like and other inorganic materials can be improved; as a space microwave component, the micro-discharge threshold of metals such as aluminum, copper, magnesium alloy and the like can be increased, and the electron cloud effect of equipment such as a particle accelerator, a spacecraft and the like in the running process is weakened.
The invention has the beneficial effects that:
1) According to the preparation method of the fluorinated amorphous carbon film, the direct current and radio frequency co-sputtering process is adopted, and the fluorinated amorphous carbon nano-structure film is deposited on the surface of the substrate layer, so that the secondary electron emission coefficient of the fluorinated amorphous carbon nano-structure film is reduced, and the preparation method has the advantages of simplicity, good practicality, strong repeatability, controllable film component height and the like;
2) The fluorinated amorphous carbon film regulates and controls the microscopic morphology and band gap width of the film through the change of chemical components and microstructures, so that the secondary electron emission coefficient of the film is changed, the scattering intensity during secondary electron emission in the film is affected, the secondary electron emission coefficient of the film is reduced, and the fluorinated amorphous carbon film has potential application prospects in the fields of high-voltage insulating materials or space microwave components.
Drawings
In order to make the objects, technical solutions and advantageous effects of the present invention more clear, the present invention provides the following drawings for description:
FIG. 1 is an atomic force microscope examination of a fluorinated amorphous carbon film prepared in example 1 of the present invention;
FIG. 2 is an atomic force microscope examination of a fluorinated amorphous carbon film having a power ratio of 0.75 in example 2 of the present invention;
FIG. 3 is a graph showing the variation of the microstructure detected by the Raman spectrometer of the fluorinated amorphous carbon film according to the invention with the sputtering power ratio;
FIG. 4 is a graph showing the secondary electron emission coefficient of the fluorinated amorphous carbon film according to the sputtering power ratio;
FIG. 5 is a graph showing the secondary electron emission coefficient of the fluorinated amorphous carbon film according to the present invention according to the sputtering pressure.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to limit the invention, so that those skilled in the art may better understand the invention and practice it.
Example 1
The preparation method of the fluorinated amorphous carbon film of the embodiment comprises the following steps:
1) Pretreatment of a substrate: cutting an aluminum sheet into a round shape with the diameter of 6mm and the thickness of 1mm, sequentially placing the round shape in acetone, absolute ethyl alcohol and pure water for ultrasonic cleaning for 20min, drying in nitrogen flow, and placing the round shape in a vacuum drying oven for standby;
2) Target pretreatment: using polytetrafluoroethylene targets and graphite targets as co-sputtering targets, sequentially polishing the surfaces of the targets by using 500# abrasive paper, 1000# abrasive paper and 2000# abrasive paper, and then cleaning the targets by using absolute ethyl alcohol;
3) Pretreatment of a coating chamber: the pretreated aluminum sheet and target material are put into a coating chamber, and the background vacuum degree of the coating chamber is pumped to 5 multiplied by 10 by a mechanical pump and a molecular pump -3 Pa, keeping the target baffle closed, introducing argon as working gas, starting a power supply, adjusting the flow rate of the argon to enable the air pressure of the film plating chamber to be 0.5Pa, setting the temperature of the substrate to be 50 ℃, setting the target-base distance to be 100mm, setting the direct current power to be 50W and the radio frequency power to be 100W, and performing pre-sputtering for 20min;
4) Magnetron co-sputtering coating: firstly, keeping the target baffle plate closed, regulating the flow rate of argon to enable the air pressure of a coating chamber to be 1.0Pa, then starting a direct current sputtering power supply and a radio frequency sputtering power supply to enable a graphite target and a polytetrafluoroethylene target to be started successively, adjusting the radio frequency power to be 100W, enabling the direct current power to be 25W, simultaneously opening the two target baffle plates and timing, keeping the rotating speed of an aluminum substrate to be 90rpm, and after the co-sputtering time reaches 100min, closing the target baffle plate and the sputtering power supply to obtain the fluorinated amorphous carbon film with the direct current/radio frequency sputtering power ratio of 0.25.
Example 2
In this example, the procedure and conditions were the same as in example 1, except that the DC power in the magnetron co-sputtering coating film in step 4) was replaced with 50W, 75W, 100W or 125W. The fluorinated amorphous carbon films with the direct current/radio frequency sputtering power ratios of 0, 0.5, 0.75, 1 and 1.25 are prepared in sequence.
The fluorinated amorphous carbon film obtained in example 1, i.e., at a dc/rf sputtering power ratio of 0.25, and example 2, at a dc/rf sputtering power ratio of 0.75 was subjected to atomic force microscopy, and the results are shown in fig. 1 and 2.
As can be seen from the comparative analysis of fig. 1 and fig. 2, the film surfaces of the fluorinated amorphous carbon films prepared in example 1 and example 2 all have three-dimensional structures, the magnitude of the power ratio in the magnetron co-sputtering film coating can affect the surface morphology of the fluorinated amorphous carbon film, and the roughness of the film surface tends to increase with the increase of the power ratio. Wherein, when the sputtering power ratio is 0.25 in fig. 1, the root mean square roughness and peak-to-valley value of the prepared fluorinated amorphous carbon film are respectively 0.966nm and 20.6nm, and when the sputtering power ratio is 0.75 in fig. 2, the root mean square roughness and peak-to-valley value of the prepared fluorinated amorphous carbon film are respectively 3.050nm and 31.5nm, thereby proving that the surface roughness of the film can be obviously changed by regulating the power ratio.
The results of raman spectroscopy on the fluorinated amorphous carbon films prepared in examples 1 and 2 under different dc/rf power ratios are shown in fig. 3.
In FIG. 3, raman shift (cm) -1 ) Representing raman shift; the Intensity (a.u.) represents the raman spectral Intensity. As can be seen from the analysis in FIG. 3, the Raman spectrum contains 2 characteristic peaks (namely, D peak and G peak) which mainly reflect sp in the composite film 2 Information on hybridized carbon, where the D peak is at 1400cm -1 Nearby, it comes from the respiratory vibration of the aromatic ring; the G peak is about 1580cm -1 The peak is derived from the stretching vibration of all carbon-carbon bonds in the aromatic ring and paraffin chain. Under the same radio frequency sputtering power, the higher the direct current power is, the higher the D peak intensity of the prepared fluorinated amorphous carbon film is, the more the G peak position moves upwards remarkably, and the larger the relative intensity ratio of the D peak to the G peak is, thereby proving that the fluorinated amorphous carbon prepared by the methodThe film can change graphite phase and sp in the film more effectively 3 The content of hybridized carbon can regulate the microstructure change of film.
The fluorinated amorphous carbon films prepared in example 1 and example 2 were subjected to secondary electron emission coefficient detection analysis under different direct current/radio frequency power ratios. Specifically, a vacuum degree of 5×10 is employed -4 The secondary electron emission coefficient test platform of Pa, the secondary electron emission characteristic test was performed on the fluorinated amorphous carbon thin films prepared in examples 1 and 2 under the conditions of direct current/radio frequency sputtering power ratios of 0, 0.25, 0.5, 0.75, 1 and 1.25, respectively, and the initial electron energy was 0-2000eV, and the results are shown in fig. 4.
In fig. 4, energy represents initial electron Energy, SEY represents secondary electron emission coefficient, and the film obtained at the dc/rf sputtering power ratio of 0 is a fluorocarbon film. As can be seen from the analysis in fig. 4, the ratio of dc/rf sputtering power in the magnetron co-sputtering film affects the secondary electron emission characteristics of the fluorinated amorphous carbon film, and the secondary electron emission coefficient of the film tends to increase and decrease with increasing initial electron energy. The larger the direct current/radio frequency sputtering power ratio is, the smaller the secondary electron emission coefficient of the prepared fluorinated amorphous carbon film is, and the secondary electron emission coefficient of the prepared fluorinated amorphous carbon film is lower than that of the fluorocarbon film. Therefore, the fluorinated amorphous carbon film prepared by the method can inhibit the secondary electron emission process on the surface of the film more effectively.
Example 3
The preparation method of the fluorinated amorphous carbon film of the embodiment comprises the following steps:
1) Pretreatment of a substrate: cutting an aluminum sheet into a round shape with the diameter of 6mm and the thickness of 1mm, sequentially placing the round shape in acetone, absolute ethyl alcohol and pure water for ultrasonic cleaning for 20min, drying in nitrogen flow, and placing the round shape in a vacuum drying oven for standby;
2) Target pretreatment: using polytetrafluoroethylene targets and graphite targets as co-sputtering targets, sequentially polishing the surfaces of the targets by using 500# abrasive paper, 1000# abrasive paper and 2000# abrasive paper, and then cleaning the targets by using absolute ethyl alcohol;
3) Pretreatment of a coating chamber: the pretreated aluminum sheet and target material are put into a coating chamber, and the background vacuum degree of the coating chamber is pumped to 5 multiplied by 10 by a mechanical pump and a molecular pump -3 Pa, keeping the target baffle closed, introducing argon as working gas, starting a power supply, adjusting the flow rate of the argon to enable the air pressure of the film plating chamber to be 0.5Pa, setting the temperature of the substrate to be 50 ℃, setting the target-base distance to be 100mm, setting the direct current power to be 50W and the radio frequency power to be 100W, and performing pre-sputtering for 20min;
4) Magnetron co-sputtering coating: firstly, keeping the target baffle plate closed, regulating the flow rate of argon to enable the air pressure of a film coating chamber to be 0.25Pa, then starting a direct current sputtering power supply and a radio frequency sputtering power supply to enable a polytetrafluoroethylene target and a graphite target to be started successively, adjusting the radio frequency power to be 100W, enabling the direct current power to be 50W, simultaneously opening the two target baffle plates and timing, keeping the rotating speed of an aluminum substrate to be 90rpm, and after the co-sputtering time reaches 100min, closing the target baffle plates and the sputtering power supply to obtain the fluorinated amorphous carbon film with the sputtering air pressure of 0.25 Pa.
Example 4
In this example, the procedure and conditions were the same as in example 3 except that the sputtering gas pressure in the magnetron co-sputtering coating film of step 4) was replaced with 0.5Pa, 0.75Pa, 1.00Pa, 1.25Pa and 1.5 Pa. The fluorinated amorphous carbon films with sputtering air pressure of 0.5Pa, 0.75Pa, 1.00Pa, 1.25Pa and 1.5Pa are sequentially prepared.
Vacuum degree of 5×10 is adopted -4 Secondary electron emission coefficient test platform of Pa secondary electron emission characteristic test was performed on the fluorinated amorphous carbon thin films prepared in examples 3 and 4 under the conditions that the sputtering air pressure in the magnetron co-sputtering coating film was 0.25Pa, 0.5Pa, 0.75Pa, 1.00Pa, 1.25Pa and 1.5Pa, respectively, and the initial electron energy was 0-2000eV, and the results are shown in fig. 5.
In fig. 5, energy represents initial electron Energy, and SEY represents secondary electron emission coefficient. As can be seen from the analysis in fig. 4, the secondary electron emission characteristic of the surface of the fluorinated amorphous carbon film is affected by the sputtering air pressure in the magnetron co-sputtering film, and the secondary electron emission coefficient of the film surface tends to increase and then decrease with the increase of the initial electron energy. The secondary electron emission coefficient of the prepared fluorinated amorphous carbon film is lower than that of the prepared fluorinated amorphous carbon film when the sputtering air pressure is 0.5Pa, which is 0.25Pa, 0.75Pa, 1.00Pa, 1.25Pa and 1.5Pa under the same initial electron energy, so that the fluorinated amorphous carbon film prepared by the method can inhibit the secondary electron emission process of the film surface more effectively.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.
Claims (7)
1. The fluorinated amorphous carbon film is characterized by comprising a substrate layer and a fluorinated amorphous carbon film deposited on the surface of the substrate layer, wherein the substrate layer is a metal sheet, an inorganic nonmetallic film sheet or an organic film sheet;
the preparation method of the fluorinated amorphous carbon film comprises the following steps:
1) Pretreatment of a substrate: ultrasonic cleaning and drying are carried out on the basal layer;
2) Target pretreatment: polishing the polytetrafluoroethylene target and the graphite target, and cleaning the polytetrafluoroethylene target and the graphite target by an organic solvent;
3) Pretreatment of a coating chamber: placing the pretreated basal layer and target material into a coating chamber, vacuumizing the background, and introducing inert gas to perform pre-sputtering;
4) Magnetron co-sputtering coating: simultaneously, co-sputtering on the surface of the basal layer by using radio frequency and direct current sputtering to obtain a fluorinated amorphous carbon film;
wherein in the step 3), the background vacuum degree of the coating chamber is 1-5 multiplied by 10 -3 Pa; the pre-sputtering conditions were: keeping the target baffle closed, regulating the flow rate of argon to ensure that the air pressure of the film plating chamber is 0.1-2Pa, the substrate temperature is 20-80 ℃, the target-base distance is 20-300 mm, the direct current power is 10-500W, the radio frequency power is 10-300W, and the time is 5-150 min;
in the step 4), the air pressure of the film plating chamber is regulated to be 0.25-1.5Pa by regulating the flow rate of argon, then a direct current power supply and a radio frequency power supply are started to enable the graphite target and the polytetrafluoroethylene target to be sequentially started, the radio frequency power is regulated to be 100W, the direct current power is 25-125W, meanwhile, the baffle plates of the two targets are opened, the rotating speed of the basal layer is kept to be 90rpm, the sputtering time is 100min, and the direct current/radio frequency power ratio is 0.25-1.25.
2. The fluorinated amorphous carbon film according to claim 1, wherein the metal sheet is aluminum, copper or magnesium alloy, the inorganic nonmetallic film sheet is a monocrystalline silicon sheet or a glass slide, and the organic film sheet is polytetrafluoroethylene or polyimide.
3. The method for producing a fluorinated amorphous carbon film according to claim 1 or 2, characterized by comprising the steps of:
1) Pretreatment of a substrate: ultrasonic cleaning and drying are carried out on the basal layer;
2) Target pretreatment: polishing the polytetrafluoroethylene target and the graphite target, and cleaning the polytetrafluoroethylene target and the graphite target by an organic solvent;
3) Pretreatment of a coating chamber: placing the pretreated basal layer and target material into a coating chamber, vacuumizing the background, and introducing inert gas to perform pre-sputtering;
4) Magnetron co-sputtering coating: simultaneously, co-sputtering on the surface of the basal layer by using radio frequency and direct current sputtering to obtain a fluorinated amorphous carbon film;
in the step 4), the air pressure of the film plating chamber is regulated to be 0.25-1.5Pa by regulating the flow rate of argon, then a direct current power supply and a radio frequency power supply are started to enable the graphite target and the polytetrafluoroethylene target to be started successively, the radio frequency power is regulated to be 100W, the direct current power is 25-125W, meanwhile, the baffles of the two targets are opened, the rotating speed of the basal layer is kept to be 90rpm, the sputtering time is 100min, and the direct current/radio frequency power ratio is 0.25-1.25.
4. The method for producing a fluorinated amorphous carbon film according to claim 3, comprising the steps of:
1) Pretreatment of a substrate: sequentially placing the cut basal layer in acetone, absolute ethyl alcohol and pure water for ultrasonic cleaning, and blow-drying in nitrogen flow;
2) Target pretreatment: polishing the polytetrafluoroethylene target and the graphite target by sand paper, and cleaning by absolute ethyl alcohol;
3) Pretreatment of a coating chamber: placing the pretreated substrate layer and target material into a coating chamber, pumping background vacuum into the coating chamber through a mechanical pump and a molecular pump, and introducing argon for pre-sputtering;
4) Magnetron co-sputtering coating: and performing radio frequency sputtering on a polytetrafluoroethylene target, performing direct current sputtering on a graphite target, and performing co-sputtering on the surface of the basal layer to obtain the fluorinated amorphous carbon film.
5. The method for preparing a fluorinated amorphous carbon film according to claim 4, wherein in the step 1), the base layer is cut to have a size of: the ultrasonic cleaning time of acetone, absolute ethyl alcohol and pure water is 20min, the diameter is 6mm, the thickness is 1mm, and the ultrasonic cleaning time is 20min, and the ultrasonic cleaning time is put into a vacuum drying oven for standby after the ultrasonic cleaning time is dried in nitrogen flow.
6. The method according to claim 4, wherein in the step 2), the abrasive grains of the polished target material are 500#, 1000# and 2000#.
7. Use of the fluorinated amorphous carbon film according to claim 1 or 2 as a high voltage insulating material or a space microwave component.
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Non-Patent Citations (1)
| Title |
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| Feipeng Wang等.Significantly Reduced Secondary-Electron-Yield of Aluminum Sheet with Fluorocarbon Coating.coatings.2018,第2节. * |
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