CN112054086A - Method for preparing silicon-based photoelectric detector with transverse junction - Google Patents
Method for preparing silicon-based photoelectric detector with transverse junction Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 48
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 37
- 239000002210 silicon-based material Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000013519 translation Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910018503 SF6 Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 238000005224 laser annealing Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 5
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910007271 Si2O3 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000003915 air pollution Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000007847 structural defect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000007781 pre-processing Methods 0.000 claims 1
- 238000004549 pulsed laser deposition Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000002441 reversible effect Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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Abstract
The invention relates to a method for preparing a transverse junction silicon-based photoelectric detector, which forms a transverse pn junction or a heterojunction through the current carrier conduction type or concentration difference between a black silicon surface prepared by pulse laser and an unprocessed silicon region, and can form the black silicon photoelectric detector with the transverse junction through the subsequent processes of annealing, passivation, photoetching, electrode preparation and the like. The transverse junction silicon-based photoelectric detector can efficiently absorb photons to generate electron-hole pairs under reverse bias voltage, and the electron-hole pairs are transversely moved under the action of an external electric field to finally form transverse photocurrent, so that optical signal detection is realized. Compared with the traditional longitudinal structure detector, the transverse junction silicon-based photoelectric detector prepared by the invention effectively inhibits dark current and improves the detection rate of the device, simplifies the preparation process of the device and is more beneficial to the preparation and integration of the device.
Description
Technical Field
The invention relates to the field of silicon-based photoelectric devices, in particular to a method for preparing a photoelectric detector, which is a transverse junction silicon-based photoelectric detector with lower dark current.
Background
In recent decades, with the rapid development of semiconductor processes, semiconductor devices with various functions have been improving people's lives and have great potential for the next generation of industrial revolution (such as artificial intelligence, interconnection of everything, unmanned driving, etc.). As the most common and important semiconductor material, silicon materials have the advantages of abundant content, low price, high purity, few defects, and the like. So far, silicon has developed great potential in the field of microelectronics, and the limit of moore's law is continuously broken through, which advances the innovation and development of semiconductor technology. However, in the field of optoelectronics, the absorption rate of silicon, especially in the infrared band, is suppressed due to the limitation of the energy band width of 1.12eV and the high reflectivity of the surface of single crystal silicon, which greatly limits the development of silicon photonics.
Doping of different elements is an important method for improving photoelectric characteristics of semiconductor materials, and is a common modification means in the fields of photoelectric detectors, solar cells and the like. However, due to the limitation of solid solubility, the traditional thermal diffusion process is difficult to realize the supersaturated doping of doping elements, and with the development of semiconductor processes, the ion implantation and the supersaturation doping of ultrafast pulse laser can realize the supersaturated doping exceeding the solid solubility. Particularly, after ultrafast pulse laser modification, a micro-cone structure and a supersaturated doping layer can be formed on the surface of crystalline silicon at the same time, so that the characteristic of wide-spectrum high response of the photoelectric detector can be realized, however, a great amount of impurities and lattice defects are inevitably introduced in the modification process, adverse effects are caused on the dark current and the signal-to-noise ratio of the device, the performance of the semiconductor device is greatly reduced, and the application range of the device is limited.
Disclosure of Invention
In order to solve the above problems, the present inventors have made long-term experiments and studies to provide a method for fabricating a lateral junction silicon-based photodetector. On one hand, the defects of high dark current and low signal-to-noise ratio of the traditional silicon-based photoelectric detector are improved, and on the other hand, the defect that the silicon-based material after supersaturation doping is difficult to be compatible with the existing CMOS is overcome.
According to the technical scheme of the invention, the preparation method of the transverse junction silicon-based photoelectric detector comprises the following steps:
step 1: selecting a semiconductor monocrystalline silicon wafer, and carrying out pretreatment including but not limited to slicing, RCA cleaning and pre-coating a film containing a doping element on the silicon surface;
step 2: selecting the treated monocrystalline silicon material, irradiating a specific region on the surface of the monocrystalline silicon material in a specific atmosphere by using ultrafast pulse laser, and preparing a supersaturated doping layer to obtain a black silicon surface;
and step 3: annealing the prepared black silicon material, activating impurity atoms in the supersaturated doped black silicon layer, repairing crystal lattices, and removing structural defects;
and 4, step 4: plating a passivation layer on the black silicon and the area of the silicon surface which does not need electrode contact so as to protect the surface of the detector and isolate air pollution and oxidation;
and 5: respectively plating contact electrodes on the silicon area and the black silicon area; thus, the preparation of the transverse junction silicon-based photoelectric detector is completed;
the dark current of the transverse silicon-junction photoelectric detector under the bias voltage of-5V can be reduced to 783nA, which is far smaller than that of a conventional black silicon photoelectric detector with a vertical structure; meanwhile, the response band of the device is 500nm-1400nm, the peak responsivity under-5V bias is 3.23A/W, and the peak wavelength is near 1080 nm. Wherein the specific meanings of the mathematical symbols are as follows: nm: nano, V: volt, A/W: ampere/watt, nA: nano amperes.
Further, the monocrystalline silicon substrate in the step 1 can be either n-type or p-type, the thickness is 5 μm-500 μm (micrometer), and the crystal orientation, the resistivity and the size of the semiconductor wafer are not limited; the surface flatness of the monocrystalline silicon substrate is less than or equal to 10 μm, i.e. the difference between the highest point and the lowest point of the material surface.
Further, the pretreatment in step 1 may be selected from, but not limited to, the following procedures: (a) cutting a monocrystalline silicon wafer into small blocks with a certain size; (b) cleaning the monocrystalline silicon by an RCA cleaning method; (c) and depositing a layer of film with a certain thickness and containing doping substances on the silicon surface by a coating process or a film growth process.
Further, the specific steps of preparing the supersaturated doped black silicon layer by the ultrafast pulse laser irradiation in the step 2 are as follows:
(1) and fixing the cleaned monocrystalline silicon on a three-dimensional translation table in a vacuum chamber, and driving the translation table to make the sample perform two-dimensional motion on a plane vertical to the incident laser. Selecting a proper moving range and moving speed through parameter setting of the three-dimensional translation stage, and matching with a shutter switch to realize preparation of different patterns and structures;
(2) vacuum pumping is carried out, and the vacuum degree is 100-10-5Pa, then filling certain gas with the pressure less than 1 standard atmosphere, such as sulfur hexafluoride, nitrogen and the like, or pumping to a vacuum state;
(3) controlling the movement of the sample stage: the supersaturation doping and modification area and scanning speed of the ultrafast pulse laser are controlled by controlling the moving speed and the moving range, namely, the ultrafast pulse laser does two-dimensional motion on a plane vertical to the incident laser direction; the polarization direction and the power of the laser irradiated on the surface of the monocrystalline silicon are adjusted through a Glan-Taylor prism and a half-wave plate, so that the laser flux irradiated on the surface of the monocrystalline silicon is 0.01kJ/m2-100kJ/m2The number of received pulses per unit area is 1-5000, and the pulse width of the ultrafast pulse laser is 5fs-100ns, so as to control the surface modification strength and the doping concentration; can not only process large-area supersaturated doping layer by line scanning, but also set different scanning patterns and paths and make the supersaturated doping layer by matching with a shutter switchPreparing a micro-area supersaturated doping layer and supersaturated doping layers with different patterns;
(4) after scanning is finished, pumping out gas in the vacuum cavity, filling nitrogen to a standard atmospheric pressure, opening a vacuum cavity cover, taking out a sample silicon wafer, and detecting that a processed area (namely a black silicon layer) is black or dark gray; the surface of the monocrystalline silicon material processed by the steps forms a quasi-periodically arranged micro-nano structure, and a large amount of impurity elements are doped.
Preferably, the annealing method in step 3 can select, but is not limited to: one of the methods of rapid thermal annealing, tube furnace annealing, ultrafast pulse laser annealing, femtosecond laser annealing and the like.
Further, the preparation method of the passivation layer in the step 4 comprises a resistance thermal evaporation method, a magnetron sputtering method, an electron beam evaporation method, a pulse laser deposition method, a chemical vapor deposition method, a heteroepitaxial growth method and the like; the passivating material being Al2O3、SiNx、Si2O3a-Si: H. one or a combination of passivating materials such as phosphorosilicate glass and polyimide. The preparation method can be to prepare the passivation layer after photoetching patterns, and also can prepare the passivation layer after a metal mask.
Further, the preparation method of the contact electrode of the black silicon and silicon area in the step 5 is a resistance thermal evaporation method, a magnetron sputtering method, an electron beam evaporation method or a pulse laser deposition method; the electrode material is one or the combination of aluminum, gold, silver, chromium, nickel, titanium or platinum; the electrode shape can be prepared as a rectangle, a ring, a circle, an ellipse, or other irregular patterns.
Advantageous effects
Compared with the prior art, the invention has the following advantages:
1. the lateral junction silicon-based photoelectric detector prepared by the invention has a more stable lateral pn junction or heterojunction, and compared with a vertical structure silicon-based photoelectric detector, the dark current of the lateral junction silicon-based photoelectric detector is reduced, and the stability of a device is improved.
2. According to the invention, the positive and negative electrodes are plated on the black silicon and silicon material areas on the front surface simultaneously after the ultrafast pulse laser irradiation, compared with the method that the positive and negative electrodes are plated on the front surface and the back surface of the traditional black silicon photoelectric detector or the electrodes are plated after the table surface is etched, the method provided by the invention not only ensures the stability of the device, reduces the leakage noise of the device, but also simplifies the preparation process;
3. under the bias of-5V, the external quantum efficiency of the transverse silicon-bonded photoelectric detector in the wave band range of 640-1170 nm exceeds 100 percent, and the characteristic of wide spectrum and high gain under low bias is realized; in addition, the dark current of the transverse silicon-junction photoelectric detector prepared by the invention under the bias voltage of-5V is 783nA, and the defect that the dark current of the photoelectric detector is difficult to inhibit after the doping and modification of the femtosecond laser supersaturation is overcome.
4. The preparation processes adopted by the invention are CMOS compatible processes, and have the advantage of being compatible with the existing CMOS, CCD and other semiconductor processes.
5. The invention has the advantages of simple structure, simple process, easily obtained raw materials, easy processing and easy storage, etc.
Drawings
FIG. 1 is a schematic flow chart of a preparation method of lateral junction silicon-based photoelectric detection provided by the invention.
Fig. 2 is a cross-sectional structural view of lateral junction silicon-based photodetection provided by the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Additionally, the scope of the present invention should not be limited to the particular structures or components or the particular parameters described below.
The invention utilizes the transverse interface formed between the black silicon and the unprocessed silicon after the ultrafast pulse laser modification, and utilizes the carrier species and the concentration of the transverse interface of the black silicon and the silicon through the processes of subsequent passivation, metal electrode preparation and the likeDifference in degree, forming a lateral pn junction or n+-an i-junction heterostructure, thereby forming a lateral junction silicon-based photodetector. The surface of the black silicon layer is provided with a quasi-periodically arranged micro-cone structure, the surface of the black silicon layer is provided with supersaturated impurity elements, and the impurity elements in the black silicon doping layer are activated through subsequent annealing treatment, so that the light absorption rate of the black silicon doping layer is more than 80% in a wide spectrum range (0.25-2.5 microns), and the absorption rate of the semiconductor silicon material is greatly improved, and the spectrum absorption range of the semiconductor silicon material is expanded. The transverse junction silicon-based photoelectric detector works under reverse bias voltage, absorbs photons to generate photo-generated electron-hole pairs, transversely migrates to the electrodes at two sides under the action of an electric field, and forms transverse photocurrent after being collected by the electrodes, thereby realizing photoresponse and detection.
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following method for manufacturing a lateral junction silicon-based photodetector according to the present invention is further described with reference to the accompanying drawings, and includes the following specific steps:
FIG. 1 is a cross-sectional structural diagram of a lateral junction silicon-based photodetector provided by the invention, wherein 1-1 is a monocrystalline silicon substrate, 1-2 is a black silicon layer supersaturated and doped by femtosecond laser, 1-3 is a surface passivation layer, and 1-4 are contact electrodes of black silicon and silicon respectively.
Fig. 2 is a schematic flow chart of a method for manufacturing a lateral junction silicon-based photodetector provided by the invention.
Referring to fig. 2, a more detailed method for fabricating a lateral junction silicon-based photodetector according to the present invention is illustrated, which comprises the following steps:
step 1: selecting a monocrystalline silicon substrate with a clean and flat surface;
step 2: pretreating the selected monocrystalline silicon wafer, including but not limited to slicing, RCA cleaning and plating a film containing an element to be doped on the silicon surface;
and step 3: placing the processed monocrystalline silicon into a vacuum cavity and fixing the monocrystalline silicon on a sample rack, so that incident laser is vertically irradiated on the surface of a sample;
and 4, step 4: vacuum pumping is carried out to 100-10-5Pa, less than 1 according to the doping element chargeA specific gas at atmospheric pressure or a vacuum;
and 5: the surface micro-nano structure and the supersaturated doping layer are prepared by irradiating a specific area on the surface of the monocrystalline silicon in a specific pressure and atmosphere by pulse laser, a sample is driven by a three-dimensional translation table to perform two-dimensional plane scanning motion, and a large-area black silicon layer can be processed by controlling the scanning speed to perform line-by-line scanning.
Step 6: after the processing is finished, pumping away the gas in the processing cavity, filling nitrogen to a standard atmospheric pressure, opening a cavity cover, taking out a sample, observing the color of the processed area to be black or dark gray by naked eyes, forming a quasi-periodically arranged micro-nano structure on the surface of the silicon material processed by the steps, and doping a large amount of impurity elements, thereby obtaining a black silicon surface;
and 7: further processing the prepared black silicon material by selecting a proper annealing method, such as rapid thermal annealing, tube furnace annealing, nanosecond laser melting annealing or femtosecond laser annealing and the like, adjusting parameters such as annealing temperature, annealing time and the like to activate doping elements in the black silicon layer, simultaneously removing defects and repairing damaged lattices;
and 8: preparing a passivation layer in the areas except the areas where the black silicon and the silicon are in contact with the electrodes, and reserving the areas needing to be in contact with the electrodes through a photoetching mask process or a physical mask process, wherein the preparation method of the passivation layer can be resistance thermal evaporation, magnetron sputtering, electron beam evaporation, chemical vapor deposition, pulse laser deposition, a heteroepitaxial growth method and the like; the passivation material may be Al2O3、SiNx、Si2O3a-Si: H. one or a combination of phosphosilicate glass, polyimide, and the like.
And step 9: respectively preparing a black silicon contact electrode and a silicon contact electrode in the electrode contact area reserved in the step 8 through a photoetching mask process or a physical mask process, simultaneously preparing the black silicon and silicon metal contact electrodes, and also respectively preparing the black silicon and silicon metal contact electrodes; the electrode material can be one or the combination of aluminum, gold, silver, chromium, nickel, titanium or platinum; the electrode shape may be rectangular, annular, circular, elliptical, or other irregular pattern.
Wherein, the monocrystalline silicon substrate in the step 1 can be either n-type or p-type, the thickness is 100 μm-500 μm (micrometer), and the crystal orientation, resistivity and size of the semiconductor wafer are not limited; the monocrystalline silicon substrate is required to have a flat surface, and the surface flatness, namely the difference between the highest point and the lowest point of the surface of the material, is less than or equal to 10 micrometers.
Further, the gas in the step 4 may be one or a combination of nitrogen, hydrogen, sulfur hexafluoride, oxygen, helium, argon, carbon tetrafluoride, or the like, or may be a vacuum environment, and the pressure may be 10-5Pa to 1 atmosphere.
Furthermore, the laser parameters and irradiation conditions in the step 5 can be selected from various options, such as nanosecond laser, picosecond laser, femtosecond laser and attosecond laser, and the laser parameters used in the case are the femtosecond laser with the central wavelength of 800nm and the pulse width of 120 fs; the polarization direction and power of the laser irradiated on the surface of the single crystal silicon can be continuously adjusted through the combination of a Glan-Taylor prism and a half-wave plate, so that the femtosecond laser flux is 0.8kJ/m2-8kJ/m2The number of pulses received in unit area can be 1-500 by adjusting the stepping motor;
the dark current of the manufactured transverse junction silicon-based photoelectric detector under the bias voltage of-5V can be reduced to 783nA, which is far smaller than that of a traditional black silicon photoelectric detector with a vertical structure; meanwhile, the response band of the device is 500nm-1400nm, the peak responsivity under-5V bias is 3.23A/W, and the peak wavelength is near 1080 nm. Wherein the specific meanings of the mathematical symbols are as follows: nm: nano, V: volt, A/W: ampere/watt, nA: nano amperes.
In summary, the lateral junction silicon-based photodetector fabricated using the above fabrication method comprises-fabricating a supersaturated doped black silicon surface and forming a black silicon-silicon lateral interface; -annealing the prepared black silicon material; -passivation to protect the material surface; -making black silicon and silicon-to-metal contact electrodes. And thus, the preparation of the transverse junction silicon-based photoelectric detection device is completed.
Example 1 was carried out:
the preparation method of the transverse junction silicon-based photoelectric detector comprises the following steps:
step 1: selecting a 2-inch n-type (100) zone-melting monocrystalline silicon wafer, wherein the resistivity of the silicon wafer is 3000-5000 omega-cm, and the thickness of the silicon wafer is 430 +/-10 mu m;
step 2: the method comprises the following steps of pretreating the selected monocrystalline silicon wafer: (a) cleaning the monocrystalline silicon wafer by a standard RCA cleaning method; (b) and cutting the monocrystalline silicon wafer into small units.
And step 3: putting the cleaned monocrystalline silicon into a vacuum cavity and fixing the monocrystalline silicon on a sample rack, so that incident laser is vertically irradiated on the surface of a sample, wherein the sample rack is connected with a three-dimensional moving platform, and the sample can move two-dimensionally on a plane vertical to the incident laser under the driving of a translation platform;
and 4, step 4: vacuum pumping is carried out to 10-5Pa, recharging 0.67bar of sulfur hexafluoride gas, and finally processing under the atmosphere of 0.67bar of sulfur hexafluoride gas;
and 5: the center wavelength of the incident femtosecond laser is 800nm, the pulse width is 120fs, and the laser flux irradiated to the surface of the silicon wafer is 1.0kJ/m2The sample is driven by a two-dimensional translation table to perform two-dimensional scanning motion, line-by-line scanning is performed, a square area with the area of 1cm multiplied by 1cm is scanned, the scanning line interval is 50 mu m, and the scanning speed is 1 mm/s;
step 6: after the processing is finished, the cavity is vacuumized to 10 DEG-5Pa, filling nitrogen to atmospheric pressure, opening a cavity cover, taking out a sample, and observing the color of the processed area by naked eyes to be black or dark gray, namely a sulfur element supersaturation doped black silicon layer, wherein the thickness of the doped layer is about 100nm, and the unprocessed area still maintains the smooth polishing characteristic of monocrystalline silicon;
and 7: treating a sample irradiated by femtosecond laser by using a rapid thermal annealing method, wherein the temperature is raised to 240 ℃ within 10s and then to 600 ℃ within 5s in the first step; secondly, keeping the temperature constant, wherein the temperature is kept between 600 ℃ and 600 s; thirdly, naturally cooling to below 100 ℃, and taking out a sample;
and 8: using plasma enhancementChemical Vapor Deposition (PECVD) method for preparing SiO on black silicon surface2A passivation layer having a thickness of about 1 μm; then, through an ultraviolet photoetching technology, the surface of the material is protected by photoresist, and only part of black silicon and silicon areas needing electrode contact are exposed; the sample was then rinsed in dilute hydrofluoric acid for 5 seconds to remove the SiO in the areas not covered by the photoresist2A passivation layer; the photoresist was then removed by acetone cleaning.
And step 9: preparing an aluminum metal electrode as a positive contact electrode and a negative contact electrode in the areas of black silicon and silicon surface by adopting a resistance thermal evaporation method, wherein the specific method comprises the following steps: masking the material surface by spin coating photoresist and ultraviolet lithography, making the hollow area not covered by the photoresist after masking correspond to the black silicon and the area on the silicon to be plated with electrode, fixing the sample after mask etching right above the molybdenum boat of an evaporation coating machine, placing a proper amount of aluminum particles in the molybdenum boat, vacuumizing to 3 x 10-3Evaporating and evaporating an aluminum electrode after Pa; and then removing the photoresist by acetone cleaning, thereby completing the manufacture of the device.
The dark current of the transverse junction silicon-based photoelectric detector prepared by the steps under the bias voltage of-5V can be reduced to 783nA, and the transverse heterojunction effectively overcomes the defect that the dark current of the black silicon photoelectric detector is difficult to inhibit; and the characteristics of high gain and wide spectrum are realized under low bias voltage, the response band of the device is 500nm-1400nm, the peak value responsivity under-5V bias voltage is 3.23A/W, and the peak value wavelength is near 1080 nm. Effectively improving the signal-to-noise ratio and the dynamic range of the device.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (7)
1. A method for preparing a lateral junction silicon-based photoelectric detector with low dark current is characterized by comprising the following steps:
step 1: selecting a monocrystalline silicon wafer, and pretreating the selected silicon wafer;
step 2: selecting pretreated monocrystalline silicon, irradiating a specific area on the surface of the monocrystalline silicon in a specific atmosphere or vacuum by pulse laser, and preparing a supersaturated doping layer to obtain a black silicon surface;
and step 3: annealing the prepared black silicon material, activating impurity atoms in the supersaturated doped black silicon layer, repairing crystal lattices, and removing structural defects;
and 4, step 4: plating a passivation layer on the black silicon surface except the electrode contact area to protect the black silicon surface and isolate air pollution and oxidation;
and 5: respectively plating contact electrodes on electrode contact areas of the silicon and the black silicon; thus, the preparation of the transverse junction silicon-based photoelectric detector is completed.
2. The method of claim 1, wherein the single crystal silicon selected in step 1 is either n-type or p-type, and has a thickness of 5 μm-500 μm (micrometers), and the semiconductor wafer has unlimited crystal orientation, resistivity, and size.
3. The method of claim 1, wherein the preprocessing in step 1 includes but is not limited to: (1) cutting a monocrystalline silicon wafer into small blocks with a certain size; (2) cleaning the monocrystalline silicon by an RCA cleaning method; (3) and depositing a layer of film with a certain thickness and containing doping substances on the silicon surface by a coating process or a film growth process.
4. The method for preparing the lateral junction silicon-based photodetector as claimed in claim 1, wherein the step 2 of preparing the supersaturated doped black silicon surface by the pulsed laser irradiation comprises the following specific steps:
(1) fixing the pretreated monocrystalline silicon material on a three-dimensional translation table in a vacuum chamber, driving a sample to make two-dimensional motion on a plane vertical to incident laser under the drive of the translation table, selecting a proper moving range and moving speed through parameter setting of the three-dimensional translation table so as to control the area and scanning speed of a pulse laser supersaturation doping and modification region, and matching with a shutter switch to realize preparation of different patterns and structures;
(2) vacuum pumping is carried out, and the vacuum degree is 100-10-5Pa, then filling specific gas with pressure less than 1 standard atmosphere, such as sulfur hexafluoride, nitrogen and the like, or keeping the state of vacuum;
(3) pulsed laser scanning: controlling the translation stage to make the sample move in two dimensions on a plane perpendicular to the incident laser direction; the pulse width of the incident pulse laser is 5fs-100ns, and the polarization direction and power of the laser irradiated to the surface of the monocrystalline silicon are adjusted by a Glan-Taylor prism and a half-wave plate, so that the laser flux irradiated on the surface of the monocrystalline silicon is 0.01kJ/m2-100kJ/m2The number of received pulses per unit area is 1-5000, so that the surface modification strength and the doping concentration are controlled; the method can not only scan and process large-area supersaturated doping layers line by line, but also set different scanning patterns and paths or prepare a micro-area supersaturated doping layer and supersaturated doping layers with different patterns by matching with a shutter switch;
(4) after scanning is finished, pumping out gas in the vacuum cavity, refilling nitrogen to a standard atmospheric pressure, opening a vacuum cavity cover, taking out a sample silicon wafer, and detecting a processed area, namely a black silicon layer, which is black or dark gray; the silicon material surface processed by the steps forms a quasi-periodically arranged micro-nano structure, and a large amount of impurity elements are doped.
5. The method for manufacturing a lateral junction silicon-based photodetector as claimed in claim 1, wherein the annealing method in step 3 is one or a combination of rapid thermal annealing, tube furnace annealing, ultrafast pulsed laser annealing, femtosecond laser annealing, and the like.
6. According to the rightThe method for preparing the transverse junction silicon-based photoelectric detector according to claim 1, wherein the method for preparing the passivation layer in the step 4 comprises a resistance thermal evaporation method, a magnetron sputtering method, an electron beam evaporation method, a pulse laser deposition method, a chemical vapor deposition method, a heteroepitaxial growth method and the like; the passivating material being Al2O3、SiNx、Si2O3a-Si: H. one or the combination of phosphorosilicate glass, polyimide and the like, and the masking mode can be that a passivation layer is prepared after photoetching patterns are carried out, the passivation layer of the electrode contact area is removed through photoetching after the passivation layer is prepared, or the passivation layer can be prepared after mask plate masking is carried out.
7. The method for preparing a lateral junction silicon-based photodetector as claimed in claim 1, wherein the method for preparing the contact electrode in the electrode contact region of the black silicon and the silicon in step 5 can be a resistance thermal evaporation method, a magnetron sputtering method, an electron beam evaporation method or a pulsed laser deposition method; the electrode material is one or the combination of aluminum, gold, silver, chromium, nickel, titanium or platinum; the shape of the electrode can be prepared into a rectangular shape, a ring shape, a round shape, an oval shape or other irregular figures; the mask mode can be to prepare the metal electrode after photoetching the pattern, can also be through preparing the metal electrode after the physical mask.
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