CN112053942A - Method for growing GaN film on graphene - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 230000033116 oxidation-reduction process Effects 0.000 claims 1
- 230000006911 nucleation Effects 0.000 abstract description 10
- 238000010899 nucleation Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007781 pre-processing Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 10
- 238000001237 Raman spectrum Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
A method for growing a GaN film on graphene belongs to the technical field of semiconductors. Firstly, growing a graphene layer on a substrate layer, and then preprocessing the surface of the grown graphene layer by using plasma; sequentially epitaxially growing an AlN buffer layer and a GaN layer on the graphene layer by adopting an MOCVD method, wherein the growth sources are trimethyl aluminum, trimethyl gallium and high-purity ammonia gas, the growth temperature is 700-1300 ℃, and the growth pressure is 50-400 mbar; thereby growing a GaN film on the graphene. The AlN buffer layer is prepared by a two-step temperature growth method, namely, a low-temperature AlN layer is epitaxially grown on the graphene layer at a low temperature (700-900 ℃), and then the high-temperature AlN layer is continuously epitaxially grown at a high temperature (1000-1300 ℃). The method not only can obtain the high-density AlN nucleation islands on the graphene, but also can promote the transverse combination of the high-density AlN nucleation islands, thereby providing enough nucleation sites for the subsequent growth of the GaN and realizing the epitaxial growth of the GaN film.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a method for growing a GaN film on graphene.
Background
The third generation semiconductor material represented by GaN has important application value in the fields of illumination, display, energy communication, national defense, military industry and the like, and is classified as a strategic advanced electronic material by China. At present, a single crystal GaN self-supporting substrate is expensive, epitaxial growth of a GaN-based device structure is mainly based on a heterogeneous substrate, and lattice mismatch and thermal mismatch inevitably exist between an epitaxial GaN material and the substrate in heterogeneous epitaxy, so that a large number of point defects, line defects and residual stress exist in the GaN material and a device thereof, and the improvement of the performance of the GaN-based device is seriously hindered.
Van der waals epitaxy of GaN material on two-dimensional materials provides a new approach to solve the above problems. Sp is formed between C atoms in the graphene two-dimensional material2Hybrid sigma covalent bonds, three covalent bonds per carbon atom, no dangling bonds at the surface, and bonding together between layers by weak van der waals forces. The GaN epitaxial on the graphene can not form strong covalent bonds at the interface, so that the crystal lattice of the nitride material at the interface can not generate large strain as that of the traditional heteroepitaxy, and the stress of the GaN film can be greatly reduced. Meanwhile, due to weak acting force between the graphene and the epitaxial layer, the epitaxial thin film layer can be easily peeled from the substrate sheet and transferred to other flexible substrate materials, and a new functional device is realized. However, graphene has a lack of dangling bonds on the surface, has low surface energy, is not easy to nucleate GaN, and is difficult to obtain a continuous GaN film. Therefore, the problem that the GaN film is difficult to form on the graphene is solved, and the method has important significance for preparing high-crystal-quality GaN materials and high-performance GaN-based optoelectronic devices on the graphene.
Disclosure of Invention
The invention aims to solve the problem that GaN film forming on graphene is difficult. From the perspective of improving the nucleation density of the graphene surface, the epitaxial growth of the GaN film on the graphene is carried out by adopting a low-temperature and high-temperature two-step AlN buffer layer growth process. The method can obtain the high-density AlN nucleation islands on the graphene, and can promote the transverse combination of the high-density AlN nucleation islands, so that sufficient nucleation sites can be provided for the subsequent growth of the GaN, and the epitaxial growth of the GaN film is realized.
The invention is realized by the following technical scheme:
the invention provides a method for growing a GaN film on graphene (see figures 1 and 2 and description of figures), which is characterized in that: growing a graphene layer 2 on a substrate layer 1, and then preprocessing the surface of the grown graphene layer 2 by using plasma; then sequentially epitaxially growing an AlN buffer layer 3 (with the thickness of 20-400 nm) and a GaN layer 4 (with the thickness of 1-3 microns) on the graphene layer 2 by adopting an MOCVD method, wherein the growth sources are trimethyl aluminum, trimethyl gallium and high-purity ammonia gas, the growth temperature is 700-1300 ℃, and the growth pressure is 50-400 mbar; thereby growing a GaN film on the graphene.
Furthermore, the working gas of the plasma is nitrogen, oxygen or ammonia, the processing power is 10-200W, and the processing time is 1-150 s.
Furthermore, the AlN buffer layer 3 is prepared by a two-step temperature growth method, namely, a low-temperature AlN layer with the thickness of 10-100 nm is epitaxially grown on the graphene layer 2 at a low temperature (700-900 ℃), and then a high-temperature AlN layer with the thickness of 10-300 nm is continuously epitaxially grown at a raised temperature (1000-1300 ℃).
Further, the substrate layer 1 is a sapphire, SiC, Si, GaN, AlN or diamond substrate.
Further, the method for growing the graphene layer may be a redox method, a CVD method, or a thermal decomposition SiC method, and the number of graphene layers is 1 or more and 6 or less.
The invention has the advantages that: according to the method, the epitaxial growth of the GaN film on the graphene is carried out by adopting a low-temperature and high-temperature two-step AlN buffer layer growth process, the method not only can obtain high-density AlN nucleation islands on the graphene, but also can promote the transverse combination of the high-density AlN nucleation islands, so that sufficient nucleation sites can be provided for the subsequent growth of the GaN, and the epitaxial growth of the GaN film is realized. Therefore, the epitaxial growth of the GaN film with low stress and high crystal quality can be realized on the graphene, and the development of the GaN material on the graphene and the photoelectric device thereof is promoted.
Drawings
FIG. 1: the invention discloses a schematic diagram of an epitaxial structure for growing a GaN film on graphene;
FIG. 2: the invention relates to a process flow chart for growing a GaN film on graphene;
FIG. 3: room temperature raman spectra of graphene before/after plasma treatment in example 1;
FIG. 4: room temperature raman spectrum of GaN thin film grown on graphene in example 1;
FIG. 5: an (a) XRD (002) plane rocking curve pattern and (b) XRD (102) plane rocking curve pattern of the GaN thin film grown on graphene in example 1;
FIG. 6: surface SEM image of GaN thin film grown on graphene in example 1.
The labels in the figure are: 1 is a substrate layer, 2 is a graphene layer, 3 is an AlN buffer layer, and 4 is a GaN layer.
Detailed Description
Example 1:
1. 3 graphene layers 2 are grown on the SiC substrate 1 by a thermal decomposition SiC method. The SiC substrate 1 was annealed at 900 ℃ for 1 hour under an argon atmosphere at an annealing pressure of 400 mbar. Then, heating is continued to 1600 ℃ in an argon atmosphere at 800mbar for 3 hours, and the growth of 3 graphene layers 2 on the surface of the SiC substrate 1 is realized. And then, treating the surface of the graphene layer by adopting a plasma surface pretreatment technology, wherein the working gas for plasma treatment is nitrogen, the temperature is room temperature, the power is 50W, and the treatment time is 30 s. Then, an MOCVD method is adopted to sequentially prepare an AlN buffer layer 3 (with the thickness of 200nm, wherein a low-temperature AlN layer with the thickness of 40nm is firstly extended, and then a high-temperature AlN layer with the thickness of 160nm is increased in temperature and is remained) and a GaN layer 4 (with the thickness of 2 μm) on the graphene layer 2 prepared on the SiC substrate 1. The initial low-temperature growth temperature and the subsequent high-temperature growth temperature of the AlN buffer layer 3 are 780 ℃ and 1100 ℃, and the growth pressure is 100 mbar; the growth source is trimethyl aluminum and high-purity ammonia gas; the growth temperature of the GaN layer 4 is 1050 ℃, the growth pressure is 200mbar, and the growth source is trimethyl gallium and high-purity ammonia gas. The specific growth parameters of each layer of the epitaxial film are shown in Table 1.
2. Fig. 3 is a comparison graph of room temperature raman spectra of the untreated graphene and the nitrogen plasma treated graphene according to the present invention, where the D peak intensity in the raman spectrum of the nitrogen plasma treated graphene is significantly increased compared to the untreated graphene, which indicates that the nitrogen plasma treatment introduces defects on the surface of the graphene layer 2.
3. Fig. 4 shows a raman spectrum of the GaN layer 4 on the graphene layer 2 prepared in example 1. E of the GaN layer 4 can be seen2(high) a phonon frequency of 567.9cm-1. For unstressed GaN films, E2(high) the phonon frequency is 568.0cm-1When the film is subjected to in-plane tensile/compressive stress, E is caused2(high) the phonon frequency is red-shifted [ i.e. E ]2(high) phonon frequency below 568.0cm-1]Bluing (i.e. E)2(high) phonon frequency greater than 568.0cm-1]. The in-plane stress σ of the GaN layer 4 can be calculated by the formula σ ═ Δ ω/κ, where Δ ω is E of the GaN layer 42(high) phonon frequency and E of unstressed GaN film2(high) difference in phonon frequency, κ is the raman strain factor (calculated as-3.4 cm @)-1·GPa-1) The in-plane stress value of the GaN layer 4 is calculated to be about +0.03GPa (the symbol + indicates that the in-plane stress is applied); while tensile stress in GaN thin films (with a thickness of about 2 μm) prepared on SiC substrates is generally reported to be about 0.7GPa, the use of the graphene layer 2 as a substrate in the present invention can reduce the tensile stress of GaN thin films by an order of magnitude.
4. Fig. 5 shows rocking curves of (002) plane and (102) plane of X-ray diffraction (XRD) of GaN layer 4 on graphene layer 2 prepared in example 1, and the full widths at half maximum of the rocking curves of (002) plane and (102) plane were obtained as 232arcsec and 290arcsec, respectively. The half-widths of the rocking curves of the (002) plane and the (102) plane of a GaN thin film on a commonly reported foreign substrate such as a Si substrate are about 270arcsec and 520arcsec respectively; the full widths at half maximum of the rocking curves of the (002) plane and the (102) plane of the GaN film on the sapphire substrate are respectively about 201arcsec and 275arcsec, which shows that the crystal quality of the GaN film grown on the graphene is equivalent to that of the GaN film directly grown on other common foreign substrates.
5. Fig. 6 shows Scanning Electron Microscope (SEM) images of the GaN layer 4 on the graphene layer 2 prepared in example 1, which shows that a smooth continuous GaN film can be obtained on graphene using a low-temperature, high-temperature two-step AlN buffer layer growth process.
Table 1: growth parameters of each layer of epitaxial structure for growing GaN film on graphene
Table 1 notes: TMGa represents trimethyl gallium; TMAl represents trimethylaluminum; NH (NH)3Representing high purity ammonia gas.
Claims (5)
1. A method for growing a GaN film on graphene is characterized by comprising the following steps: firstly, growing a graphene layer (2) on a substrate layer (1), and then pretreating the surface of the grown graphene layer (2) by using plasma; sequentially epitaxially growing an AlN buffer layer (3) and a GaN layer (4) on the graphene layer (2) by adopting an MOCVD method, wherein the growth sources are trimethyl aluminum, trimethyl gallium and high-purity ammonia gas, the growth temperature is 700-1300 ℃, and the growth pressure is 50-400 mbar; thereby growing a GaN film on the graphene; the AlN buffer layer (3) is prepared by a two-step temperature growth method, namely, a low-temperature AlN layer is epitaxially grown on the graphene layer (2) at the low temperature of 700-900 ℃, and then the temperature is raised to 1000-1300 ℃ to continue the epitaxial growth of the high-temperature AlN layer; the low-temperature AlN layer and the high-temperature AlN layer together constitute an AlN buffer layer (3).
2. The method of claim 1, wherein the step of growing the GaN thin film on the graphene comprises: the working gas of the plasma is nitrogen, oxygen or ammonia, the processing power is 10-200W, and the processing time is 1-150 s.
3. The method of claim 1, wherein the step of growing the GaN thin film on the graphene comprises: the substrate layer (1) is a sapphire, SiC, Si, GaN, AlN or diamond substrate.
4. The method of claim 1, wherein the step of growing the GaN thin film on the graphene comprises: the method for growing the graphene layer (2) is an oxidation-reduction method, a CVD method or a thermal decomposition SiC method, and the number of layers of the graphene layer (2) is not less than 1 and not more than 6.
5. The method of claim 1, wherein the step of growing the GaN thin film on the graphene comprises:
the AlN buffer layer (3) is 20-400 nm thick, and the GaN layer (4) is 1-3 mu m thick; low temperature
The AlN layer has a thickness of 10 to 100nm, and the high-temperature AlN layer has a thickness of 10 to 300 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113394306A (en) * | 2021-05-18 | 2021-09-14 | 浙江大学 | Reusable ZnO single crystal substrate based on graphene and method for preparing ZnO film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120295418A1 (en) * | 2011-05-20 | 2012-11-22 | Yuriy Melnik | Methods for improved growth of group iii nitride buffer layers |
| CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
| CN108428618A (en) * | 2018-03-16 | 2018-08-21 | 西安电子科技大学 | Growing method of gallium nitride based on graphene insert layer structure |
| CN108878266A (en) * | 2018-07-03 | 2018-11-23 | 北京大学 | A method of growing mono-crystal gallium nitride film on polycrystalline or amorphous substrate |
| US20190108999A1 (en) * | 2016-03-08 | 2019-04-11 | Xidian University | Method for growing gallium nitride based on graphene and magnetron sputtered aluminium nitride |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120295418A1 (en) * | 2011-05-20 | 2012-11-22 | Yuriy Melnik | Methods for improved growth of group iii nitride buffer layers |
| CN103548117A (en) * | 2011-05-20 | 2014-01-29 | 应用材料公司 | Methods for improved growth of group iii nitride buffer layers |
| CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
| US20190108999A1 (en) * | 2016-03-08 | 2019-04-11 | Xidian University | Method for growing gallium nitride based on graphene and magnetron sputtered aluminium nitride |
| CN108428618A (en) * | 2018-03-16 | 2018-08-21 | 西安电子科技大学 | Growing method of gallium nitride based on graphene insert layer structure |
| CN108878266A (en) * | 2018-07-03 | 2018-11-23 | 北京大学 | A method of growing mono-crystal gallium nitride film on polycrystalline or amorphous substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394306A (en) * | 2021-05-18 | 2021-09-14 | 浙江大学 | Reusable ZnO single crystal substrate based on graphene and method for preparing ZnO film |
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