CN112048707A - 一种薄膜图形化夹具工装及其应用方法 - Google Patents

一种薄膜图形化夹具工装及其应用方法 Download PDF

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CN112048707A
CN112048707A CN202010322657.5A CN202010322657A CN112048707A CN 112048707 A CN112048707 A CN 112048707A CN 202010322657 A CN202010322657 A CN 202010322657A CN 112048707 A CN112048707 A CN 112048707A
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张树伟
刘福民
张乐民
杨静
刘宇
梁德春
崔尉
吴浩越
马骁
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Beijing Aerospace Control Instrument Institute
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Abstract

一种薄膜图形化夹具工装及其应用方法，属于微电子机械加工技术领域。本发明方法包括如下步骤：制备硅基掩模；调整掩模翘曲使掩模调整为凹形；在掩模边缘制备固定切边；将掩模和基底对准，并在固定切边处将掩模和基底固定；将掩模和基底用薄膜图形化夹具工装固定，进行薄膜的沉积。通过该工装和技术方法，可不通过光刻工艺薄膜沉积的过程中即可实现薄膜图形化，同时避免了薄膜沉积过程中向图形外扩散、均匀性差等问题。

Description

一种薄膜图形化夹具工装及其应用方法
技术领域
本发明涉及一种薄膜图形化夹具工装及其应用方法，属于微电子机械加工技术领域。
背景技术
在MEMS微制造技术领域，需要具有一定图案的金属或其他薄膜结构。形成这种结构的方法主要有两种，第一种是首先进行薄膜沉积，然后进行光刻成形和薄膜刻蚀等。该方法优点是精度高，可满足小尺寸图案的使用要求，缺点是步骤多，成本高，刻蚀时需找到合适的刻蚀剂。另一种是，首先制备出具有目标图形的掩模，然后在薄膜沉积的过程实现薄膜的图形化。该方法适用于图形尺寸较大，对精度要求较低的图形化工艺，同时该方法操作简单，节约成本。
掩模的材质主要包括金属、有机和半导体三种。金属掩模加工误差大，图形化精度低，有机掩模存在受热变形等问题，而半导体掩模以硅基掩模最为普遍，硅基掩模加工精度高，稳定性好，可满足大部分掩模的需求。但掩模法进行薄膜图形化普遍存在沉积过程薄膜扩散、薄膜均匀性差等问题，限制了掩模的使用范围。
发明内容
本发明解决的技术问题是：克服现有技术的不足，提供了一种薄膜图形化夹具工装及其应用方法，通过该工装和技术方法，可不通过光刻工艺薄膜沉积的过程中即可实现薄膜图形化，同时避免了薄膜沉积过程中向图形外扩散、均匀性差等问题。
本发明的技术解决方案是：一种薄膜图形化夹具工装，包括底座、凹形槽、螺纹孔和短压力片和长压力片；
所述底座和凹形槽一体连接；
所述凹形槽图形和待沉积薄膜基底形状相同；
所述长压力片为中空结构，一端设有螺纹孔，且与底座固定连接，另一端伸入凹形槽形成的空腔中；
所述短压力片个数为4，均布在底座上，每个短压力片的一端设有螺纹孔，且与底座固定连接，另一端伸入凹形槽形成的空腔中。
基于所述的薄膜图形化夹具工装的应用方法，包括如下步骤：
制备硅基掩模；
调整掩模翘曲使掩模调整为凹形；
在掩模边缘制备固定切边；
将掩模和基底对准，并在固定切边处将掩模和基底固定；
将掩模和基底用薄膜图形化夹具工装固定，进行薄膜的沉积。
进一步地，硅基掩模的制备包括如下步骤：
准备晶向为<100>的单晶硅片；
在所述的单晶硅片单面进行抗蚀层的制备；
在所述抗蚀层表面进行涂胶、光刻、显影和刻蚀，在抗蚀层表面形成由底部向上呈阶梯状增大的抗蚀层大开口部和抗蚀层小开口部；
通过KOH溶液对单晶硅片和抗蚀层进行刻蚀，形成贯穿单晶硅片的从底部向上呈阶梯状增大的掩模大开口部和掩模小开口部，完成硅基掩模的制备；所述掩模小开口部的掩模小开口部底部与待沉积薄膜的图形相对应。
进一步地，所述进行抗蚀层的制备的方法为：用PECVD或LPCVD制备二氧化硅薄膜氮化硅薄膜。
进一步地，所述调整掩模翘曲使掩模调整为凹形的方法为：在掩模大开口部一侧表面沉积具有拉应力的大开口部薄膜或在掩模小开口部底部一侧的表面沉积具有压应力的小开口部薄膜。
进一步地，所述在掩模边缘制备固定切边的方法为：通过划片机在掩模的上、下、左和右处距离边缘1～2mm的位置进行切割，形成固定切边。
进一步地，所述将掩模和基底对准的方法为：根据贯穿硅基掩模的十字形对准标记和基底图形的差异进行对准。
进一步地，所述将掩模和基底固定的方法为：用高温胶带在固定切边处将掩模和基底固定。
进一步地，所述将掩模和基底用薄膜图形化夹具工装固定的方法为：通过螺钉拧紧使所述短压力片给掩模四周边缘施加压力，长压力片给掩模中心施加压力。
本发明与现有技术相比的优点在于：
(1)本发明制备出了适用于多种薄膜的图形化夹具工装，具有操作简单、成本低和适用性广等优点。
(2)本发明制备出了和夹具工装配合使用的硅基掩模，通过阶梯状增发的开口部，增加了沉积到基底薄膜的厚度，具有加工精度高、易于对准和成本低等优点。
(3)本发明通过对掩模翘曲调节、固定切边和固定工装设计使掩模和基底紧密贴合，避免了薄膜吸气剂沉积过程中向掩模限制图形外的扩散，增加产品合格率和薄膜的均匀性。
附图说明
图1是本发明实施例提供的薄膜图形化夹具工装的制备及应用方法的流程图；
图2是本发明实施例提供的薄膜图形化夹具工装的示意图；
图3(a)～(d)是本发明实施例提供的硅基掩模的制备工序图；
图4(a)和(b)是本发明实施例提供的掩模翘曲调节效果示意图；
图5是本发明实施例提供的硅基掩模固定切边制备的结构示意图。
图6(a)和(b)是本发明实施例提供的固定切边处固定后的示意图。
具体实施方式
下面结合说明书附图和具体实施方式对本发明进行进一步解释和说明。
一种薄膜图形化夹具工装，包括底座1、凹形槽2、螺纹孔3和短压力片4和长压力片5；
所述底座1和凹形槽2一体连接；
所述凹形槽2图形和待沉积薄膜基底形状相同；
所述长压力片5为中空结构，一端设有螺纹孔3，且与底座1固定连接，另一端伸入凹形槽2形成的空腔中；
所述短压力片4个数为4，均布在底座1上，每个短压力片4的一端设有螺纹孔3，且与底座1固定连接，另一端伸入凹形槽2形成的空腔中。
下面将参照附图更详细地描述本公开的示例性实施例。虽然附图中显示了本公开的示例性实施例，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。
图1是本发明实施例提供的薄膜图形化夹具工装的制备及应用方法的流程图。如图1所示，该薄膜图形化夹具工装的制备及应用方法包括以下步骤：
1)制备薄膜图形化夹具工装
2)制备硅基掩模；
3)调整掩模翘曲，使掩模调整为凹形；
4)在掩模边缘制备固定切边；
5)掩模和基底对准，在固定切边处将掩模和基底固定；
6)将掩模和基底用夹具工装固定，进行薄膜的沉积。
下面以通过磁控溅射在MEMS陀螺仪圆片级真空封装衬底片上制备薄膜吸气剂为例，该薄膜图形化夹具工装的制备及应用方法包括以下步骤：
1)如图2所示，固定工装包含底座、凹形槽、螺纹孔和带相同尺寸螺纹孔4根短压力片和1根长压力片等结构，其中底座和凹形槽一体连接。工装材质可以为不锈钢等，凹形槽的深度为5mm，形状为四寸硅片对应尺寸，螺纹孔直径为2mm。
2)制备硅基掩模。如图3(a)-(d)所示，掩模制备包括以下步骤：①准备晶向为<100>的四寸单晶硅片；②在硅片表面进行抗蚀层的制备，抗蚀层可以是氧化硅、氮化硅等；③在抗蚀层表面进行涂胶、光刻、显影、刻蚀，形成贯穿抗蚀层的由底部阶梯状增大的大开口部和小开口部；④通过33％浓度的KOH溶液对硅进行刻蚀，硅刻蚀的同时抗蚀层也会被刻蚀，形成贯穿单晶硅片的由底部阶梯状增大的大开口部和小开口部。以氧化硅为例，33％浓度的KOH溶液对硅和氧化硅的选择比大致为1:100，因此根据硅片厚度确定氧化硅抗蚀层的厚度，即可实现氧化硅层图形向硅片的转移。
3)调整掩模翘曲，使掩模调整为凹形。如图4所示，凹形掩模通过在掩模大开口部一侧表面沉积具有拉应力的薄膜或在小开口部底部一侧的表面沉积具有压应力的薄膜来完成。
4)在掩模边缘制备固定切边。如图5所示，通过划片机等在掩模上、下、左、右处距离边缘1～2mm的位置进行切割制得，使掩模相比于基底具有部分缺失。
5)通过观察贯穿掩模的十字形对准标记和基底图形的差异将掩模和基底进行对准，对准后用高温胶带在固定切边处将掩模和基底相互固定，如图6所示，通过固定切边的固定，使掩模和基底贴合更紧密，减少薄膜制备过程中向小开口底部限制图形外扩散，增加基底上沉积薄膜的均匀性。。
6)将掩模和基底在固定工装上固定。将掩模和基底放于凹形槽内，4根短压力片前端放置于掩模四周边缘，长压力片前端放于掩模中心。通过螺钉把压力片固定于工装上，并通过压力片给掩模施加压力。
7)将工装置于磁控溅射托盘上，进行薄膜吸气剂的溅射。
本实施例通过薄膜图形化夹具工装和阶梯状增大开口部的掩模实现了圆片级封装中薄膜吸气剂的制备，解决了湿法腐蚀图形化易造成薄膜吸气剂毒化以及部分薄膜吸气剂不易图形化的问题，同时增加了吸气剂的沉积厚度，降低了成本。通过掩模翘曲调节和固定切边的制备，使掩模和基底紧密贴合，避免了吸气剂制备过程中的扩散，增加了吸气剂均匀性和产品合格率。同时该方法适用性广，可广泛用于各种薄膜吸气剂的制备工艺中。
以上所述的实施例只是本发明较优选的具体实施方式，本领域的技术人员在本发明技术方案范围内进行的通常变化和替换都应包含在本发明的保护范围内。
本发明说明书中未作详细描述的内容属本领域技术人员的公知技术。

Claims (9)

1.一种薄膜图形化夹具工装，其特征在于，包括底座(1)、凹形槽(2)、螺纹孔(3)和短压力片(4)和长压力片(5)；
所述底座(1)和凹形槽(2)一体连接；
所述凹形槽(2)图形和待沉积薄膜基底形状相同；
所述长压力片(5)为中空结构，一端设有螺纹孔(3)，且与底座(1)固定连接，另一端伸入凹形槽(2)形成的空腔中；
所述短压力片(4)个数为4，均布在底座(1)上，每个短压力片(4)的一端设有螺纹孔(3)，且与底座(1)固定连接，另一端伸入凹形槽(2)形成的空腔中。
2.基于权利要求1所述的薄膜图形化夹具工装的应用方法，其特征在于，包括如下步骤：
制备硅基掩模；
调整掩模翘曲使掩模调整为凹形；
在掩模边缘制备固定切边；
将掩模和基底对准，并在固定切边处将掩模和基底固定；
将掩模和基底用薄膜图形化夹具工装固定，进行薄膜的沉积。
3.根据权利要求2所述的应用方法，其特征在于，硅基掩模的制备包括如下步骤：
准备晶向为<100>的单晶硅片(6)；
在所述的单晶硅片(6)单面进行抗蚀层(7)的制备；
在所述抗蚀层(7)表面进行涂胶、光刻、显影和刻蚀，在抗蚀层(7)表面形成由底部向上呈阶梯状增大的抗蚀层大开口部(8)和抗蚀层小开口部(9)；
通过KOH溶液对单晶硅片(6)和抗蚀层(7)进行刻蚀，形成贯穿单晶硅片(6)的从底部向上呈阶梯状增大的掩模大开口部(10)和掩模小开口部(11)，完成硅基掩模的制备；所述掩模小开口部(11)的掩模小开口部底部(12)与待沉积薄膜的图形相对应。
4.根据权利要求3所述的应用方法，其特征在于，所述进行抗蚀层(7)的制备的方法为：用PECVD或LPCVD制备二氧化硅薄膜氮化硅薄膜。
5.根据权利要求2所述的应用方法，其特征在于，所述调整掩模翘曲使掩模调整为凹形的方法为：在掩模大开口部(10)一侧表面沉积具有拉应力的大开口部薄膜(14)或在掩模小开口部底部(12)一侧的表面沉积具有压应力的小开口部薄膜(15)。
6.根据权利要求2所述的应用方法，其特征在于，所述在掩模边缘制备固定切边的方法为：通过划片机在掩模的上、下、左和右处距离边缘1～2mm的位置进行切割，形成固定切边(16)。
7.根据权利要求6所述的应用方法，其特征在于，所述将掩模和基底对准的方法为：根据贯穿硅基掩模的十字形对准标记(17)和基底图形的差异进行对准。
8.根据权利要求6所述的应用方法，其特征在于，所述将掩模和基底固定的方法为：用高温胶带在固定切边(16)处将掩模和基底固定。
9.根据权利要求1所述的应用方法，其特征在于，所述将掩模和基底用薄膜图形化夹具工装固定的方法为：通过螺钉拧紧使所述短压力片(4)给掩模四周边缘施加压力，长压力片(5)给掩模中心施加压力。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114835081A (zh) * 2022-03-18 2022-08-02 上海交通大学 岛形薄膜结构的形成方法和mems器件
CN115747736A (zh) * 2022-10-31 2023-03-07 华东光电集成器件研究所 一种晶圆级深腔沉积薄膜图形化的制备方法及其夹具
TWI796982B (zh) * 2022-03-28 2023-03-21 力哲科技股份有限公司 用於低壓化學氣相沉積的治具
CN117684124A (zh) * 2024-01-17 2024-03-12 北京大学深圳研究生院 薄膜掩膜版夹具和薄膜掩膜版固定在夹具的固定方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US20040214449A1 (en) * 2003-01-20 2004-10-28 Shinichi Yotsuya Precision mask for deposition and a method for manufacturing the same, an electroluminescence display and a method for manufacturing the same, and electronic equipment
US20110207328A1 (en) * 2006-10-20 2011-08-25 Stuart Philip Speakman Methods and apparatus for the manufacture of microstructures
CN103864009A (zh) * 2014-03-11 2014-06-18 中国电子科技集团公司第五十五研究所 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法
CN109461694A (zh) * 2018-12-05 2019-03-12 无锡中微掩模电子有限公司 一种掩模工艺机台新型卡盘
CN209224572U (zh) * 2018-09-26 2019-08-09 中国工程物理研究院激光聚变研究中心 一种混合薄膜机械掩膜装置
CN110172667A (zh) * 2019-06-20 2019-08-27 深圳市华星光电半导体显示技术有限公司 一种应用于溅镀设备中的夹持装置和溅镀设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US20040214449A1 (en) * 2003-01-20 2004-10-28 Shinichi Yotsuya Precision mask for deposition and a method for manufacturing the same, an electroluminescence display and a method for manufacturing the same, and electronic equipment
US20110207328A1 (en) * 2006-10-20 2011-08-25 Stuart Philip Speakman Methods and apparatus for the manufacture of microstructures
CN103864009A (zh) * 2014-03-11 2014-06-18 中国电子科技集团公司第五十五研究所 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法
CN209224572U (zh) * 2018-09-26 2019-08-09 中国工程物理研究院激光聚变研究中心 一种混合薄膜机械掩膜装置
CN109461694A (zh) * 2018-12-05 2019-03-12 无锡中微掩模电子有限公司 一种掩模工艺机台新型卡盘
CN110172667A (zh) * 2019-06-20 2019-08-27 深圳市华星光电半导体显示技术有限公司 一种应用于溅镀设备中的夹持装置和溅镀设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
姚汉民等: "《光学投影曝光微纳加工技术》", 31 December 2006 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114835081A (zh) * 2022-03-18 2022-08-02 上海交通大学 岛形薄膜结构的形成方法和mems器件
TWI796982B (zh) * 2022-03-28 2023-03-21 力哲科技股份有限公司 用於低壓化學氣相沉積的治具
CN115747736A (zh) * 2022-10-31 2023-03-07 华东光电集成器件研究所 一种晶圆级深腔沉积薄膜图形化的制备方法及其夹具
CN117684124A (zh) * 2024-01-17 2024-03-12 北京大学深圳研究生院 薄膜掩膜版夹具和薄膜掩膜版固定在夹具的固定方法

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