CN112039478A - 一种可提高fom值的二维兰姆波射频谐振器 - Google Patents
一种可提高fom值的二维兰姆波射频谐振器 Download PDFInfo
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- CN112039478A CN112039478A CN202010867930.2A CN202010867930A CN112039478A CN 112039478 A CN112039478 A CN 112039478A CN 202010867930 A CN202010867930 A CN 202010867930A CN 112039478 A CN112039478 A CN 112039478A
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- electrode
- piezoelectric layer
- radio frequency
- lamb wave
- resonator
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 37
- 238000003491 array Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000000241 respiratory effect Effects 0.000 description 2
- -1 Al and Cu Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN202010867930.2A CN112039478B (zh) | 2020-08-26 | 一种可提高fom值的二维兰姆波射频谐振器 |
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CN202010867930.2A CN112039478B (zh) | 2020-08-26 | 一种可提高fom值的二维兰姆波射频谐振器 |
Publications (2)
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CN112039478A true CN112039478A (zh) | 2020-12-04 |
CN112039478B CN112039478B (zh) | 2024-08-02 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114584102A (zh) * | 2022-03-11 | 2022-06-03 | 武汉敏声新技术有限公司 | 射频谐振器及滤波器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1199249A (zh) * | 1997-05-09 | 1998-11-18 | 株式会社村田制作所 | 厚度延伸振动模式压电谐振器和压电谐振器组件 |
JP2005064689A (ja) * | 2003-08-08 | 2005-03-10 | Murata Mfg Co Ltd | 圧電共振子及び圧電共振部品 |
CN110113026A (zh) * | 2019-05-22 | 2019-08-09 | 武汉大学 | 一种二维兰姆波谐振器 |
CN110868185A (zh) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | 体声波谐振器和半导体器件 |
CN110880922A (zh) * | 2019-11-18 | 2020-03-13 | 武汉大学 | 一种二维超高频谐振器 |
CN110995194A (zh) * | 2019-12-30 | 2020-04-10 | 武汉大学 | 一种二维高性能谐振器 |
CN111490740A (zh) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | 阵列化的分布式兰姆模态射频微机电谐振器 |
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1199249A (zh) * | 1997-05-09 | 1998-11-18 | 株式会社村田制作所 | 厚度延伸振动模式压电谐振器和压电谐振器组件 |
JP2005064689A (ja) * | 2003-08-08 | 2005-03-10 | Murata Mfg Co Ltd | 圧電共振子及び圧電共振部品 |
CN111490740A (zh) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | 阵列化的分布式兰姆模态射频微机电谐振器 |
CN110868185A (zh) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | 体声波谐振器和半导体器件 |
CN110113026A (zh) * | 2019-05-22 | 2019-08-09 | 武汉大学 | 一种二维兰姆波谐振器 |
CN110880922A (zh) * | 2019-11-18 | 2020-03-13 | 武汉大学 | 一种二维超高频谐振器 |
CN110995194A (zh) * | 2019-12-30 | 2020-04-10 | 武汉大学 | 一种二维高性能谐振器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114584102A (zh) * | 2022-03-11 | 2022-06-03 | 武汉敏声新技术有限公司 | 射频谐振器及滤波器 |
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