CN112030110A - 一种基材可分离的真空镀膜设备 - Google Patents

一种基材可分离的真空镀膜设备 Download PDF

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CN112030110A
CN112030110A CN202010848499.7A CN202010848499A CN112030110A CN 112030110 A CN112030110 A CN 112030110A CN 202010848499 A CN202010848499 A CN 202010848499A CN 112030110 A CN112030110 A CN 112030110A
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substrate
bearing disc
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叶飞
刘晓萌
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Wuxi Aierhua Photoelectric Technology Co ltd
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Abstract

本发明提供一种基材可分离的真空镀膜设备，其可以获得更均匀的镀膜效果，确保镀膜面积内工艺性一致。其包括：放置待镀膜基片的基片承载盘，设置在所述基片承载盘下方的加热器，设置于所述基片承载盘上方的电磁场发生装置和工艺气体发生装置，所述基片承载盘与所述电磁场发生装置、所述工艺气体发生装置之间的区域为镀膜工艺区，其特征在于，其还包括托盘外框、升降结构，所述基片承载盘设置于所述托盘外框上端面，所述托盘外框中心部位设置中空的托举口，所述加热器面积小于所述托举口面积；所述升降结构驱动所述加热器，经所述托举口托举放置于所述基片承载盘之上的所述待镀膜基片至所述镀膜工艺区的电磁场稳定区域。

Description

一种基材可分离的真空镀膜设备
技术领域
本发明涉及真空镀膜技术领域，具体为一种基材可分离的真空镀膜设备。
背景技术
真空气相沉积技术是指，在初始真空态前提下，对真空态的工艺腔室内通入工艺气体，然后对工艺气体以及镀膜衬底施加反应条件，例如温度、电场、辐射、激光等，让工艺气体与沉底发生理化反应，最终在沉底上成膜。真空气相沉积技术在工业生产与科学研究中有广范的应用，尤其在半导体、显示器、光伏、LED照明、环保、高端建材、航空航天、数字通讯、光学产业等等众多产业中发挥着重要，甚至是核心的作用。
然而，目前的真空气相沉积技术中，放置待镀膜基片的基片承载盘经过通过导轨、滚轮或者其它传输装置进入镀膜工艺腔体，然后在工艺腔体中的镀膜区中，在电磁场、加热器的共同作用下，经工艺气体镀膜；然而现有技术中，在进行大面积镀膜时，普遍存在镀膜均匀性差，镀膜面积内工艺一致性低等问题。
发明内容
为了解决现有的真空镀膜技术中存在镀膜均匀性差，镀膜面积内工艺一致性低的问题，本发明提供一种基材可分离的真空镀膜设备，其可以获得更均匀的镀膜效果，确保镀膜面积内工艺性一致。
本发明的技术方案是这样的：一种基材可分离的真空镀膜设备，其包括：放置待镀膜基片的基片承载盘，设置在所述基片承载盘下方的加热器，设置于所述基片承载盘上方的电磁场发生装置和工艺气体发生装置，所述基片承载盘与所述电磁场发生装置、所述工艺气体发生装置之间的区域为镀膜工艺区，其特征在于，其还包括托盘外框、升降结构，所述基片承载盘设置于所述托盘外框上端面，所述托盘外框中心部位设置中空的托举口，所述加热器面积小于所述托举口面积；所述升降结构驱动所述加热器，经所述托举口托举放置于所述基片承载盘之上的所述待镀膜基片至所述镀膜工艺区的电磁场稳定区域。
其进一步特征在于：
所述升降结构包括：丝杆、驱动连接所述丝杆的伺服机构、移动平台，所述移动平台上设置梯形螺帽，所述梯形螺帽与所述丝杆螺纹连接；所述移动平台通过移动支柱连接设置于所述加热器底部的加热器支撑块；
所述电磁场发生装置包括：自上而下依次设置的多层电极板、电极基座，所述多层电极板、所述电极基座通过电极固定组件固定连接；
所述工艺气体发生装置包括：设置于所述电极基座下方的中间布气板、多路布气板，所述多层电极板、所述电极基座、所述中间布气板、所述多路布气板，通过所述电极固定组件固定连接；工艺气体导入口开设在所述多层电极板上，经所述中间布气板、所述多路布气板将工艺气体导入到所述镀膜工艺区。
本发明提供的一种基材可分离的真空镀膜设备，通过设置可分离的托盘外框、基片承载盘，以及升降结构，通过升降结构将托盘外框抬起，使是基片承载盘、和放置其上的待镀膜基片与下方的承载结构、传输装置分离；升降结构将放置于基片承载盘上的待镀膜基片远离下方的导轨、滚轮等金属机械支撑部件，避免了金属机械支撑部件对工艺电磁场的影响造成磁场不稳定，进而提高了镀膜工艺的一致性，确保可以获得更均匀的镀膜效果；同时，本发明技术方案中，升降结构将加热器同时托举离开下方的金属机械结构，避免了下方的金属结构造成工艺热场中的冷端，避免工艺热场不均匀问题发生，进而提高了镀膜工艺的一致性，确保可以获得更均匀的镀膜效果；通过升降结构，使待镀膜基片与电极板的距离可调，即，可以根据待镀膜基片的尺寸、材质等特性，调整待镀膜基片在镀膜工艺区中的位置，可调的镀膜工艺区高度为整体镀膜工艺***增加了一个工艺参数，增加了工艺的可控性，确保本发明技术方可以灵活的适用于各种镀膜工艺需求中。
附图说明
图1为本发明的基材可分离加热承载***的主视的剖视结构示意图；
图2为基片承载盘、加热器与承载部件分离后的***的剖视结构示意图；
图3为基片承载盘和托盘外框的结构示意图；
图4为图1中A处放大后结构示意图。
具体实施方式
本发明一种基材可分离的真空镀膜设备，放置待镀膜基片的基片承载盘1，设置在基片承载盘1下方的加热器4，设置于基片承载盘1上方的电磁场发生装置8和工艺气体发生装置9，基片承载盘1与电磁场发生装置8、工艺气体发生装置9之间的区域为镀膜工艺区7，其还包括托盘外框2、升降结构6；如图1所示，基片承载盘1设置于托盘外框2上端面，托盘外框2中心部位设置中空的托举口3，加热器4面积小于托举口3面积；升降结构6驱动加热器4，经托举口3托举放置于基片承载盘1之上的待镀膜基片至镀膜工艺区7的电磁场稳定区域。
升降结构6包括丝杆6-6、驱动连接丝杆6-6的伺服机构6-7、移动平台6-4，伺服机构6-7、丝杆6-6固定于伺服固定板6-9上端面；移动平台6-4上设置梯形螺帽6-2，梯形螺帽6-2与丝杆6-6螺纹连接；移动平台6-4通过移动支柱6-1连接设置于加热器4底部的加热器支撑块5；移动支柱6-1套接在可伸缩的波纹管6-3内部，波纹管6-3安装于移动支柱固定板6-5上端面。
如图4所示，电磁场发生装置8包括：自上而下依次设置的多层电极板8-1、电极基座8-3，多层电极板8-1、电极基座8-3通过铝陶瓷质地的电极板固定件8-4固定连接；工艺气体发生装置9包括：设置于电极基座8-3下方的中间布气板9-2、多路布气板9-3，多层电极板8-1、电极基座8-3、中间布气板9-2、多路布气板9-3，通过电极固定组件8-2固定连接；工艺气体导入口9-1开设在多层电极板8-1上，工艺气体导入口9-1与中间布气板9-2、多路布气板9-3的气道连通，从工艺气体导入口9-1进入的工艺气体，经中间布气板9-2、多路布气板9-3导入到镀膜工艺区7。设置在一起的电磁场发生装置8、工艺气体发生装置9使工艺电磁场、气体发生区域重叠在，构成镀膜工艺区7，当加热器4被托举起，进入镀膜工艺区7内预定位置后，可以获得电磁场、热场、工艺气体分布都均匀的镀膜工艺区，确保待镀膜基片镀膜工序发生在各种条件都处于最均匀的区域。
如图1，当基片承载盘1、加热器4与下方承载部件处于未分离状态时，四个移动支柱6-1、四个六角柱6-8对加热器4、基片承载盘1起支撑作用。当基片承载盘经过通过导轨、滚轮或者其它传输装置进入镀膜工艺腔体中，位于电磁场发生装置8、工艺气体发生装置9下方位置后，传输装置停止运动，伺服机构6-7启动；丝杆6-6旋转，梯形螺帽6-2带动移动平台6-4沿着丝杆6-6向上运动；同时，与移动平台6-4固定连接的移动支柱6-1从波纹管6-3内部抽出，带动固定在移动支柱6-1顶端的加热器支撑块5、加热器4向上运动，加热器4自托举口3穿出，自中心部位顶起基片承载盘1，使基片承载盘1与托盘外框2分离，向上运动进入镀膜工艺区7；当基片承载盘1到达预定高度时，伺服机构6-7停止运动，此时，基片承载盘1、和放置其上的待镀膜基片到达镀膜工艺区7中预定的电磁场稳定区域；
如图2所示，基片承载盘1、加热器4与下方承载结构分离，基片承载盘1、和放置其上的待镀膜基片到达镀膜工艺区7中预定的位置后，使镀膜工序发生在更稳定的电磁场中，获得更均匀的镀膜效果；待镀膜基片与多路布气板9-3的布气口更近，在此区域工艺气体分布更均匀，进一步的确保了镀膜效果更加均匀。
而与下方托盘外框2等支撑结构分类的加热器5只需要给基片承载盘1、待镀膜基片进行加热，加热速度更快，效率更高；同时，待镀膜基片处于独立的热场中，避免了下方的金属结构造成工艺热场中的冷端，进而避免工艺热场不均匀导致镀膜效果不一致的问题发生，提高了镀膜工艺的一致性，确保可以获得更均匀的镀膜效果。
使用本发明的技术方案后，不但可以确保镀膜工艺的一致性，可以获得更均匀的镀膜效果，切本发明技术方案结构简单，极具可实施性。

Claims (4)

1.一种基材可分离的真空镀膜设备，其包括：放置待镀膜基片的基片承载盘，设置在所述基片承载盘下方的加热器，设置于所述基片承载盘上方的电磁场发生装置和工艺气体发生装置，所述基片承载盘与所述电磁场发生装置、所述工艺气体发生装置之间的区域为镀膜工艺区，其特征在于，其还包括托盘外框、升降结构，所述基片承载盘设置于所述托盘外框上端面，所述托盘外框中心部位设置中空的托举口，所述加热器面积小于所述托举口面积；所述升降结构驱动所述加热器，经所述托举口托举放置于所述基片承载盘之上的所述待镀膜基片至所述镀膜工艺区的电磁场稳定区域。
2.根据权利要求1所述一种基材可分离的真空镀膜设备，其特征在于：所述升降结构包括：丝杆、驱动连接所述丝杆的伺服机构、移动平台，所述移动平台上设置梯形螺帽，所述梯形螺帽与所述丝杆螺纹连接；所述移动平台通过移动支柱连接设置于所述加热器底部的加热器支撑块。
3.根据权利要求1所述一种基材可分离的真空镀膜设备，其特征在于：所述电磁场发生装置包括：自上而下依次设置的多层电极板、电极基座，所述多层电极板、所述电极基座通过电极固定组件固定连接。
4.根据权利要求1所述一种基材可分离的真空镀膜设备，其特征在于：所述工艺气体发生装置包括：设置于所述电极基座下方的中间布气板、多路布气板，所述多层电极板、所述电极基座、所述中间布气板、所述多路布气板，通过所述电极固定组件固定连接；工艺气体导入口开设在所述多层电极板上，经所述中间布气板、所述多路布气板将工艺气体导入到所述镀膜工艺区。
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