CN112018058B - 一种电力逆变器模块及其制造方法 - Google Patents
一种电力逆变器模块及其制造方法 Download PDFInfo
- Publication number
- CN112018058B CN112018058B CN202010934872.0A CN202010934872A CN112018058B CN 112018058 B CN112018058 B CN 112018058B CN 202010934872 A CN202010934872 A CN 202010934872A CN 112018058 B CN112018058 B CN 112018058B
- Authority
- CN
- China
- Prior art keywords
- copper foil
- insulating substrate
- chamfer
- edge
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000011889 copper foil Substances 0.000 claims abstract description 48
- 230000017525 heat dissipation Effects 0.000 claims abstract description 29
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000007747 plating Methods 0.000 claims description 47
- 238000003466 welding Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010934872.0A CN112018058B (zh) | 2020-09-08 | 2020-09-08 | 一种电力逆变器模块及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010934872.0A CN112018058B (zh) | 2020-09-08 | 2020-09-08 | 一种电力逆变器模块及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112018058A CN112018058A (zh) | 2020-12-01 |
CN112018058B true CN112018058B (zh) | 2021-09-24 |
Family
ID=73517060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010934872.0A Active CN112018058B (zh) | 2020-09-08 | 2020-09-08 | 一种电力逆变器模块及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112018058B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112910285B (zh) * | 2021-01-05 | 2022-06-14 | 深圳市富鑫产业科技有限公司 | 一种逆变器电力***及其制造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01216563A (ja) * | 1988-02-25 | 1989-08-30 | Mitsui High Tec Inc | リードフレームの製造方法 |
JP2001071269A (ja) * | 1999-09-01 | 2001-03-21 | Mitsubishi Materials Corp | 電着砥石 |
CN1714177A (zh) * | 2002-10-22 | 2005-12-28 | 应用材料有限公司 | 由接触环造型控制的电镀均匀性 |
CN103160792A (zh) * | 2011-12-12 | 2013-06-19 | 鸿富锦精密工业(深圳)有限公司 | 镀膜装置 |
CN203846121U (zh) * | 2014-05-06 | 2014-09-24 | 上海通用汽车有限公司 | 一种塑料电镀产品 |
CN105551971A (zh) * | 2015-12-08 | 2016-05-04 | 广东气派科技有限公司 | 基于Flip-chip连接的集成电路封装结构及封装工艺 |
CN108231604A (zh) * | 2018-01-24 | 2018-06-29 | 韩德军 | 一种电力用半导体装置的制造方法 |
CN110459525A (zh) * | 2019-08-20 | 2019-11-15 | 济南南知信息科技有限公司 | 一种具有逆变器的电力***及其制造方法 |
CN111647866A (zh) * | 2020-07-17 | 2020-09-11 | 通威太阳能(合肥)有限公司 | 一种边缘电场改善结构、载板单体及载板 |
-
2020
- 2020-09-08 CN CN202010934872.0A patent/CN112018058B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01216563A (ja) * | 1988-02-25 | 1989-08-30 | Mitsui High Tec Inc | リードフレームの製造方法 |
JP2001071269A (ja) * | 1999-09-01 | 2001-03-21 | Mitsubishi Materials Corp | 電着砥石 |
CN1714177A (zh) * | 2002-10-22 | 2005-12-28 | 应用材料有限公司 | 由接触环造型控制的电镀均匀性 |
CN103160792A (zh) * | 2011-12-12 | 2013-06-19 | 鸿富锦精密工业(深圳)有限公司 | 镀膜装置 |
CN203846121U (zh) * | 2014-05-06 | 2014-09-24 | 上海通用汽车有限公司 | 一种塑料电镀产品 |
CN105551971A (zh) * | 2015-12-08 | 2016-05-04 | 广东气派科技有限公司 | 基于Flip-chip连接的集成电路封装结构及封装工艺 |
CN108231604A (zh) * | 2018-01-24 | 2018-06-29 | 韩德军 | 一种电力用半导体装置的制造方法 |
CN110459525A (zh) * | 2019-08-20 | 2019-11-15 | 济南南知信息科技有限公司 | 一种具有逆变器的电力***及其制造方法 |
CN111647866A (zh) * | 2020-07-17 | 2020-09-11 | 通威太阳能(合肥)有限公司 | 一种边缘电场改善结构、载板单体及载板 |
Also Published As
Publication number | Publication date |
---|---|
CN112018058A (zh) | 2020-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5596231A (en) | High power dissipation plastic encapsulated package for integrated circuit die | |
US8890310B2 (en) | Power module package having excellent heat sink emission capability and method for manufacturing the same | |
US8884426B2 (en) | Semiconductor device including cooler | |
US9035453B2 (en) | Semiconductor device | |
JP4254527B2 (ja) | 半導体装置 | |
US10727151B2 (en) | Semiconductor chip package having a cooling surface and method of manufacturing a semiconductor package | |
JP3390661B2 (ja) | パワーモジュール | |
US20080029875A1 (en) | Hermetically sealed semiconductor device module | |
US10068819B2 (en) | Semiconductor device | |
US9466542B2 (en) | Semiconductor device | |
WO2021248954A1 (zh) | 一种功率半导体模块 | |
US20240203841A1 (en) | Novel packaging structure of power semiconductor module | |
KR102228945B1 (ko) | 반도체 패키지 및 이의 제조방법 | |
JP4967701B2 (ja) | 電力半導体装置 | |
WO2018018847A1 (zh) | 一种智能功率模块及其制造方法 | |
CN112018058B (zh) | 一种电力逆变器模块及其制造方法 | |
CN113658928A (zh) | 一种立式功率端子双面散热功率模块 | |
CN113113401A (zh) | 半导体电路和半导体电路的制造方法 | |
JP2017050441A (ja) | 半導体装置 | |
JP7117960B2 (ja) | パワーモジュール用基板およびパワーモジュール | |
JP2006190728A (ja) | 電力用半導体装置 | |
JP2013008748A (ja) | 半導体装置 | |
JP2019106422A (ja) | パワーモジュール用基板およびパワーモジュール | |
JP6769556B2 (ja) | 半導体装置及び半導体モジュール | |
CN221057406U (zh) | 一种具有银浆烧结层的功率模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210907 Address after: 211100 No. 18 Zhilan Road, Science Park, Jiangning District, Nanjing City, Jiangsu Province Applicant after: NANJING HONGJING SMART GRID TECHNOLOGY Co.,Ltd. Address before: Room 707, block a, Rongsheng Times International Plaza, 9 Beiyuan street, Licheng District, Jinan City, Shandong Province Applicant before: Ji Nannan knows Information technology Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211126 Address after: 226500 No.8 Xinyuan North Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province Patentee after: Nantong Zhongru Electric Technology Co.,Ltd. Address before: 211100 No. 18 Zhilan Road, Science Park, Jiangning District, Nanjing City, Jiangsu Province Patentee before: NANJING HONGJING SMART GRID TECHNOLOGY CO.,LTD. |