CN111953308A - Magnetic flux driven Josephson parametric amplifier and preparation method thereof - Google Patents
Magnetic flux driven Josephson parametric amplifier and preparation method thereof Download PDFInfo
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- CN111953308A CN111953308A CN202010849447.1A CN202010849447A CN111953308A CN 111953308 A CN111953308 A CN 111953308A CN 202010849447 A CN202010849447 A CN 202010849447A CN 111953308 A CN111953308 A CN 111953308A
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Abstract
The invention provides a magnetic flux driven Josephson parametric amplifier and a preparation method thereof, wherein the preparation method comprises the following steps: forming a Nb/Al-AlOx/Nb laminated structure on the surface of the substrate; etching the Nb/Al-AlOx/Nb laminated structure to form a coplanar waveguide resonant cavity structure, a pumping line structure, a ground line structure, a signal input wiring structure and a pumping input wiring structure, wherein an Nb/Al-AlOx/Nb Josephson junction is formed in the coplanar waveguide resonant cavity structure; forming an insulating layer on the surface of the structure, and etching the insulating layer to form a Josephson junction via hole, a ground via hole, an input signal pin via hole and a pump input pin via hole; and forming a superconducting thin film layer on the surface of the structure, etching the superconducting thin film layer to electrically connect the Josephson junction via hole and the ground via hole, simultaneously forming a ground pin in the ground via hole, forming an input signal pin in the input signal pin via hole, and forming a pumping input pin in the pumping input pin via hole.
Description
Technical Field
The invention belongs to superconducting electronics, and particularly relates to a magnetic flux driven Josephson parametric amplifier and a preparation method thereof.
Background
As a novel calculation tool, the quantum computer applies the superposition state principle of quantum mechanics and the quantum entanglement characteristic, and has strong parallel operation capability. The superconducting qubit is one of the most possible schemes for realizing quantum computers due to its characteristics of low loss, good expandability, compatibility with the traditional micro-nano processing technology, and the like. In a qubit measurement experiment, in order to protect the state of a qubit, the power of a measurement signal is very small, and an additional amplifier is required to amplify an output signal at the output end of a circuit. While commercial HEMTs (high electron mobility transistors) have a noise temperature of about 4K and are difficult to use for single shot (single shot read out) non-destructive readout of qubits.
A Josephson Parametric Amplifier (JPA) converts the energy of a pumping signal into the energy of an amplified signal frequency under the action of a proper pumping frequency based on the nonlinear inductance characteristic of a Josephson junction, thereby realizing the amplification of an input signal. The JPA noise level is close to quantum limit noise and can be used as a first-stage amplifier of a superconducting qubit circuit, so that the signal-to-noise ratio of a readout signal is greatly improved, and single-shot nondestructive readout of the qubit is realized.
In the prior art, a key circuit element Josephson junction of JPA adopts an Al/AlOx/Al three-layer film structure, and the preparation method of the structure comprises the following steps: the double- layer photoresist 102, 103 on the substrate 101 is exposed and developed to form a suspended bridge 104 or an asymmetric undercut (asymmetric undercut) structure (as shown in fig. 1-2), then an Al/AlOx/Al tunnel junction 108 is prepared by electron beam double-angle oblique evaporation and in-situ oxidation processes (as shown in fig. 3-5), and finally the double-layer photoresist is stripped (as shown in fig. 6). The existing preparation method has the following defects: 1) although the process steps of the Al Josephson junction prepared by double-angle evaporation are less, the suspension bridge is fragile, and the surface of the substrate or the surface of the Josephson junction is difficult to clean by plasma etching before the film is evaporated; 2) the double-layer photoresist is used for preparing the Al Josephson junction, redundant patterns (shown by a dotted line frame in figure 6) exist, and the scale of an integrated circuit is not easy to realize; 3) the superconducting transition temperature of the Al thin film is low (about 1K), and the Al thin film can work only at a lower temperature.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a magnetic flux driven josephson parametric amplifier and a method for fabricating the same, which are used to solve the problems of the prior Al/AlOx/Al tunnel junction fabrication process.
To achieve the above and other related objects, the present invention provides a method for manufacturing a magnetic flux driven josephson parametric amplifier, the method comprising:
1) providing a substrate;
2) forming a Nb/Al-AlOx/Nb laminated structure on the upper surface of the substrate;
3) sequentially etching an upper Nb layer, an Al-AlOx layer and a lower Nb layer in the Nb/Al-AlOx/Nb laminated structure to form a coplanar waveguide resonant cavity structure and a pumping line structure, simultaneously forming a ground wire structure between the coplanar waveguide resonant cavity structure and the pumping line structure, forming a signal input wiring structure on the other side of the coplanar waveguide resonant cavity structure, and forming a pumping input wiring structure on the other side of the pumping line structure; wherein, a Nb/Al-AlOx/Nb Josephson junction is formed in the coplanar waveguide resonant cavity structure;
4) forming an insulating layer on the upper surface of the structure in the step 3), and etching the insulating layer to form a josephson junction via hole on the surface of the Nb/Al-AlOx/Nb josephson junction, a ground via hole on the surface of the ground line structure, an input signal pin via hole on the surface of the signal input wiring structure, and a pumping input pin via hole on the surface of the pumping input wiring structure;
5) forming a superconducting thin film layer on the upper surface of the structure in the step 4), etching the superconducting thin film layer to electrically connect the Josephson junction via hole and the ground via hole, and simultaneously forming a ground pin in the ground via hole, an input signal pin in the input signal pin via hole, and a pumping input pin in the pumping input pin via hole.
Optionally, the preparation method further comprises: and cleaning the substrate in the step 1).
Optionally, the method for forming the Nb/Al-AlOx/Nb laminate structure in step 2) includes: sequentially forming a lower Nb layer and an Al layer on the upper surface of the substrate by adopting a direct current magnetron sputtering in-situ growth method, forming an AlOx layer on the surface of the Al layer by adopting a static oxidation method to obtain an Al-AlOx layer, and finally forming an upper Nb layer on the upper surface of the Al-AlOx layer by adopting the direct current magnetron sputtering in-situ growth method.
Optionally, the lower Nb layer has a thickness greater than its magnetic field penetration depth, the Al layer has a thickness less than the coherence length of the lower Nb layer, the AlOx layer has a thickness inversely proportional to the critical current density of the josephson junction, and the upper Nb layer has a thickness greater than its magnetic field penetration depth.
Optionally, the method for forming the coplanar waveguide resonant cavity structure, the pump line structure, the ground line structure, the signal input wiring structure, and the pump input wiring structure in step 3) includes:
3-1) etching the upper Nb layer until the Al-AlOx layer is exposed to define a Josephson junction region based on the upper Nb layer remaining after etching;
3-2) etching the Al-AlOx layer until the underlying Nb layer is exposed, wherein the Al-AlOx layer remaining after etching is located at the Josephson junction region;
3-3) etching the lower Nb layer until the substrate is exposed to form the coplanar waveguide resonant cavity structure, the pumping line structure, the ground line structure, the signal input wiring structure and the pumping input wiring structure; wherein the Josephson junction region is formed at an end of the coplanar waveguide resonant cavity structure and wherein the Nb/Al-AlOx/Nb Josephson junction is formed.
Optionally, the area of the Al-AlOx layer remaining after etching is larger than the area of the upper Nb layer remaining after etching.
Optionally, the material of the insulating layer includes SiO2And the material of the superconducting thin film layer comprises Nb.
The present invention also provides a magnetic flux-driven josephson parametric amplifier prepared by the preparation method as described above, the josephson parametric amplifier comprising:
a substrate;
a coplanar waveguide resonant cavity structure formed on the upper surface of the substrate, wherein Nb/Al-AlOx/Nb Josephson junctions are formed;
the pumping line structure is formed on the upper surface of the substrate and is positioned on one side of the coplanar waveguide resonant cavity structure;
the ground wire structure is formed on the upper surface of the substrate and is positioned between the coplanar waveguide resonant cavity structure and the pumping wire structure;
the signal input wiring structure is formed on the upper surface of the substrate and is positioned on the other side of the coplanar waveguide resonant cavity structure;
the pumping input wiring structure is formed on the upper surface of the substrate and is positioned on the other side of the pumping line structure;
an insulating layer formed on the coplanar waveguide resonant cavity structure, the pump line structure, the ground line structure, the signal input wiring structure, the pump input wiring structure and a portion of the upper surface of the substrate, and formed with a josephson junction via on the Nb/Al-AlOx/Nb josephson junction surface, a ground via on the ground line structure surface, an input signal pin via on the signal input wiring structure surface, and a pump input pin via on the pump input wiring structure surface;
a superconducting thin film layer formed on the Josephson junction via, the ground via, the input signal pin via, the pumping input pin via, and a portion of the upper surface of the insulating layer to electrically connect the Josephson junction via and the ground via, while forming a ground pin in the ground via, an input signal pin in the input signal pin via, and a pumping input pin in the pumping input pin via.
As described above, according to the magnetic flux driven Josephson parametric amplifier and the preparation method thereof, the existing micro-nano processing technology is utilized to etch the Nb/Al-AlOx/Nb laminated structure, so that the structure of the coplanar waveguide resonant cavity series superconducting quantum interference instrument with the Nb/Al-AlOx/Nb Josephson junction is formed, and meanwhile, a pumping line structure is also formed, so that the problems that the substrate is difficult to clean, redundant patterns exist and the superconducting transition temperature is low in the prior art are solved, and the performance of the Josephson parametric amplifier is greatly improved; the preparation method is compatible with the traditional semiconductor process, the prepared Josephson parametric amplifier can reach the gain of 20dB and the noise temperature below 400mK, and has the characteristics of good cold and hot circulation, high working temperature (capable of working in a liquid helium temperature zone (4.2K)), good junction uniformity and easy large-scale expansion of an integrated circuit.
Drawings
Fig. 1 is a schematic diagram illustrating a structure of forming a bilayer photoresist on a substrate according to the prior art.
FIG. 2 is a schematic structural diagram illustrating a conventional method for forming a suspension bridge by exposing and developing a bilayer photoresist.
FIG. 3 is a schematic structural diagram of an Al layer prepared by an angled evaporation process in the prior art.
Fig. 4 is a schematic structural diagram illustrating an AlOx layer prepared by an in-situ oxidation process in the prior art.
Fig. 5 is a schematic structural diagram illustrating an Al layer prepared by an angled oblique evaporation process in the prior art, wherein the oblique angles of the angled oblique evaporation processes in fig. 5 and 3 are different.
FIG. 6 is a schematic diagram of a prior art bilayer resist stripping structure.
FIG. 7 is a flow chart showing the preparation method of the present invention.
FIG. 8 shows a schematic structure of a Nb/Al-AlOx/Nb laminate structure formed on a substrate.
Fig. 9 is a schematic diagram showing the structure after etching the upper Nb layer.
FIG. 10 is a schematic diagram showing the structure of the Al-AlOx layer after etching.
Fig. 11 is a schematic diagram showing the structure after etching the underlying Nb layer.
FIG. 12 is a schematic diagram of a structure for forming an insulating layer.
Fig. 13 is a schematic diagram showing the structure after etching the insulating layer.
Fig. 14 is a schematic view showing a structure of forming a superconducting thin film layer.
Fig. 15 is a schematic view showing a structure after etching of the superconducting thin film layer.
Description of the element reference numerals
101 substrate
102 first layer of photoresist
103 second layer of photoresist
104 flying bridge
105. 107 Al layer
106 AlOx layer
108 Al/AlOx/Al tunnel junction
201 substrate
202 Nb/Al-AlOx/Nb laminated structure
2021 lower Nb layer
2022 Al-AlOx layer
2023 upper Nb layer
203 coplanar waveguide resonant cavity structure
204 pump line structure
205 ground wire structure
206 signal input wiring structure
207 pump input wiring structure
208 Nb/Al-AlOx/Nb Josephson junction
209 insulating layer
210 Josephson junction vias
211 ground via
212 input signal pin via
213 Pump input Pin Via
214 superconducting thin film layer
215 ground pin
216 input signal pin
217 Pump input Pin
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 7 to 15. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 7, the present embodiment provides a method for manufacturing a magnetic flux-driven josephson parametric amplifier, the method comprising:
1) providing a substrate 201;
2) forming an Nb/Al-AlOx/Nb laminated structure 202 on the upper surface of the substrate 201;
3) sequentially etching an upper Nb layer 2023, an Al-AlOx layer 2022 and a lower Nb layer 2021 in the Nb/Al-AlOx/Nb laminated structure 202 to form a coplanar waveguide resonant cavity structure 203 and a pump line structure 204, simultaneously forming a ground line structure 205 between the coplanar waveguide resonant cavity structure 203 and the pump line structure 204, forming a signal input wiring structure 206 on the other side of the coplanar waveguide resonant cavity structure 203, and forming a pump input wiring structure 207 on the other side of the pump line structure 204; wherein an Nb/Al-AlOx/Nb Josephson junction 208 is formed in the coplanar waveguide resonant cavity structure 203;
4) forming an insulating layer 209 on the upper surface of the structure in step 3), and etching the insulating layer 209 to form a josephson junction via 210 on the surface of the Nb/Al-AlOx/Nb josephson junction 208, a ground via 211 on the surface of the ground line structure 205, an input signal pin via 212 on the surface of the signal input wiring structure 206, and a pumping input pin via 213 on the surface of the pumping input wiring structure 207;
5) forming a superconducting thin film layer 214 on the upper surface of the structure in the step 4), and etching the superconducting thin film layer 214 to electrically connect the josephson junction via hole 210 and the ground via hole 211, and simultaneously forming a ground pin 215 in the ground via hole 211, an input signal pin 216 in the input signal pin via hole 212, and a pump input pin 217 in the pump input pin via hole 213.
Referring to fig. 8 to 15, a method for manufacturing the magnetic flux driven josephson parametric amplifier according to the present embodiment will be described in detail with reference to fig. 7.
In step 1), as shown in fig. 8, a substrate 201 is provided; wherein the substrate 201 comprises a silicon wafer or sapphire; of course, other substrate materials from which the flux driven josephson parametric amplifier can be made are equally suitable for this example.
As an example, the preparation method further comprises: and cleaning the substrate 201 to remove impurities on the surface of the substrate and improve the subsequent film growth quality, so that the quality factor of the device is improved, and the quality of the Josephson junction is improved.
Specifically, a Buffered Hydrofluoric acid (BHF) solution may be used to clean the surface of the substrate 201; of course, other suitable solutions may be used to clean the surface of the substrate 201, such as piranha solution (a mixture of concentrated sulfuric acid and hydrogen peroxide) and the like.
In step 2), as shown in fig. 8, an Nb/Al-AlOx/Nb laminate structure 202 is formed on the upper surface of the substrate 201.
By way of example, a method of forming the Nb/Al-AlOx/Nb laminate structure 202 includes: firstly, a lower Nb layer 2021 and an Al layer (not shown in the figure) are sequentially formed on the upper surface of the substrate 201 by using a dc magnetron sputtering in-situ growth method, then an AlOx layer (not shown in the figure) is formed on the surface of the Al layer by using a static oxidation method to obtain an Al-AlOx layer 2022, and finally an upper Nb layer 2023 is formed on the upper surface of the Al-AlOx layer 2022 by using a dc magnetron sputtering in-situ growth method.
Specifically, the thickness of the lower Nb layer 2021 is greater than its magnetic field penetration depth, and the thickness of the upper Nb layer 2023 is greater than its magnetic field penetration depth; it should be noted that the magnetic field penetration depth is mainly determined by the material itself, so that the corresponding magnetic field penetration depth can be determined when the material is selected. Optionally, the thickness of the lower Nb layer 2021 is equal to the thickness of the upper Nb layer 2023, such as 150 nm.
Specifically, the thickness of the Al layer is less than the coherence length of the underlying Nb layer 2021, e.g., 10 nm; it should be noted that the coherence length here is also determined by the material itself, so that the corresponding coherence length can be determined when the material is selected.
Specifically, the thickness of the AlOx layer is inversely proportional to the critical current density of the josephson junction, and the thickness of the AlOx layer can be determined according to the actually required critical current density of the josephson junction in specific applications.
In step 3), as shown in fig. 9-11, sequentially etching the upper Nb layer 2023, the Al-AlOx layer 2022, and the lower Nb layer 2021 in the Nb/Al-AlOx/Nb laminated structure 202 to form a coplanar waveguide resonant cavity structure 203 and a pump line structure 204, and simultaneously forming a ground line structure 205 between the coplanar waveguide resonant cavity structure 203 and the pump line structure 204, a signal input wiring structure 206 on the other side of the coplanar waveguide resonant cavity structure 203, and a pump input wiring structure 207 on the other side of the pump line structure 204; wherein an Nb/Al-AlOx/Nb Josephson junction 208 is formed in the coplanar waveguide resonant cavity structure 203.
As an example, the method of forming the coplanar waveguide resonant cavity structure 203, the pump line structure 204, the ground line structure 205, the signal input wiring structure 206, and the pump input wiring structure 207 includes:
3-1) etching the upper Nb layer 2023 until the Al-AlOx layer 2022 is exposed to define a josephson junction region based on the upper Nb layer 2023 remaining after etching (i.e., to define a region where the upper Nb layer 2023 remaining after etching is located as the josephson junction region), as shown in fig. 9;
3-2) etching the Al-AlOx layer 2022 until the underlying Nb layer 2021 is exposed, wherein the Al-AlOx layer 2022 remaining after etching is located at the josephson junction region, as shown in fig. 10;
3-3) etching the lower Nb layer 2021 until the substrate 201 is exposed, so as to form the coplanar waveguide resonant cavity structure 203, the pump line structure 204, the ground line structure 205, the signal input wiring structure 206, and the pump input wiring structure 207; wherein the Josephson junction region is formed at an end of the coplanar waveguide resonant cavity structure 203 and wherein the Nb/Al-AlOx/Nb Josephson junction 208 is formed, as shown in FIG. 11.
Specifically, the area of the Al-AlOx layer 2022 remaining after etching is larger than the area of the upper Nb layer 2023 remaining after etching, so as to prevent the upper Nb layer 2023 and the lower Nb layer 2021 from being short-circuited due to contact.
In step 4), as shown in fig. 12 to 13, an insulating layer 209 is formed on the upper surface of the structure in step 3), and the insulating layer 209 is etched to form a josephson junction via 210 on the surface of the Nb/Al-AlOx/Nb josephson junction 208, a ground via 211 on the surface of the ground line structure 205, an input signal pin via 212 on the surface of the signal input wiring structure 206, and a pump input pin via 213 on the surface of the pump input wiring structure 107.
As an example, the material of the insulating layer 209 includes SiO2Of course, other suitable insulating materials are equally suitable for this example.
In step 5), as shown in fig. 14 to 15, a superconducting thin film layer 214 is formed on the upper surface of the structure in step 4), and the superconducting thin film layer 214 is etched to electrically connect the josephson junction via 210 and the ground via 211, and simultaneously, a ground pin 215 is formed in the ground via 211, an input signal pin 216 is formed in the input signal pin via 212, and a pump input pin 217 is formed in the pump input pin via 213.
As an example, the material of the superconducting thin film layer 214 includes Nb; this example improves device performance by selecting the same Nb as the superconducting material in the Nb/Al-AlOx/Nb laminate structure 202 as the pin material.
As shown in fig. 15, this example also provides a magnetic flux-driven josephson parametric amplifier prepared based on the above preparation method, the josephson parametric amplifier including:
a substrate 201;
a coplanar waveguide resonant cavity structure 203 formed on the upper surface of the substrate 201, wherein an Nb/Al-AlOx/Nb Josephson junction 208 is formed;
a pump line structure 204 formed on the upper surface of the substrate 201 and located at one side of the coplanar waveguide resonant cavity structure 203;
a ground line structure 205 formed on the upper surface of the substrate 201 and located between the coplanar waveguide resonant cavity structure 203 and the pump line structure 204;
a signal input wiring structure 206 formed on the upper surface of the substrate 201 and located at the other side of the coplanar waveguide resonant cavity structure 203;
a pump input wiring structure 207 formed on the upper surface of the substrate 201 and located on the other side of the pump line structure 204;
an insulating layer 209 formed on the coplanar waveguide resonant cavity structure 203, the pump line structure 204, the ground line structure 205, the signal input wiring structure 206, the pump input wiring structure 207 and a portion of the upper surface of the substrate 201, and formed with a josephson junction via 210 on the surface of the Nb/Al-AlOx/Nb josephson junction 208, a ground via 211 on the surface of the ground line structure 205, an input signal pin via 212 on the surface of the signal input wiring structure 206, and a pump input pin via 213 on the surface of the pump input wiring structure 207;
a superconducting thin film layer 214 formed on the upper surfaces of the josephson junction via 210, the ground via 211, the input signal pin via 212, the pump input pin via 213, and a portion of the insulating layer 209 to electrically connect the josephson junction via 210 and the ground via 211, while forming a ground pin 215 in the ground via 211, an input signal pin 216 in the input signal pin via 212, and a pump input pin 217 in the pump input pin via 213.
In summary, according to the magnetic flux driven josephson parametric amplifier and the preparation method thereof, the existing micro-nano processing technology is utilized to etch the Nb/Al-AlOx/Nb laminated structure, so that the structure of the coplanar waveguide resonant cavity series superconducting quantum interference instrument with the Nb/Al-AlOx/Nb josephson junction is formed, and meanwhile, a pumping line structure is also formed, so that the problems that the substrate is difficult to clean, redundant patterns exist and the superconducting transition temperature is low in the prior art are solved, and the performance of the josephson parametric amplifier is greatly improved; the preparation method is compatible with the traditional semiconductor process, the prepared Josephson parametric amplifier can reach the gain of 20dB and the noise temperature below 400mK, and has the characteristics of good cold and hot circulation, high working temperature (capable of working in a liquid helium temperature zone (4.2K)), good junction uniformity and easy large-scale expansion of an integrated circuit. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A method of making a magnetic flux driven josephson parametric amplifier, the method comprising:
1) providing a substrate;
2) forming a Nb/Al-AlOx/Nb laminated structure on the upper surface of the substrate;
3) sequentially etching an upper Nb layer, an Al-AlOx layer and a lower Nb layer in the Nb/Al-AlOx/Nb laminated structure to form a coplanar waveguide resonant cavity structure and a pumping line structure, simultaneously forming a ground wire structure between the coplanar waveguide resonant cavity structure and the pumping line structure, forming a signal input wiring structure on the other side of the coplanar waveguide resonant cavity structure, and forming a pumping input wiring structure on the other side of the pumping line structure; wherein, a Nb/Al-AlOx/Nb Josephson junction is formed in the coplanar waveguide resonant cavity structure;
4) forming an insulating layer on the upper surface of the structure in the step 3), and etching the insulating layer to form a josephson junction via hole on the surface of the Nb/Al-AlOx/Nb josephson junction, a ground via hole on the surface of the ground line structure, an input signal pin via hole on the surface of the signal input wiring structure, and a pumping input pin via hole on the surface of the pumping input wiring structure;
5) forming a superconducting thin film layer on the upper surface of the structure in the step 4), etching the superconducting thin film layer to electrically connect the Josephson junction via hole and the ground via hole, and simultaneously forming a ground pin in the ground via hole, an input signal pin in the input signal pin via hole, and a pumping input pin in the pumping input pin via hole.
2. The method of making a magnetic flux driven josephson parametric amplifier of claim 1, further comprising: and cleaning the substrate in the step 1).
3. The method of fabricating a flux-driven josephson parametric amplifier of claim 1, wherein the method of forming the Nb/Al-AlOx/Nb laminate structure in step 2) comprises: sequentially forming a lower Nb layer and an Al layer on the upper surface of the substrate by adopting a direct current magnetron sputtering in-situ growth method, forming an AlOx layer on the surface of the Al layer by adopting a static oxidation method to obtain an Al-AlOx layer, and finally forming an upper Nb layer on the upper surface of the Al-AlOx layer by adopting the direct current magnetron sputtering in-situ growth method.
4. The method of making a magnetic flux driven josephson parametric amplifier of claim 3, wherein the thickness of the lower Nb layer is greater than its magnetic field penetration depth, the thickness of the Al layer is less than the coherence length of the lower Nb layer, the thickness of the AlOx layer is inversely proportional to the critical current density of the josephson junction, and the thickness of the upper Nb layer is greater than its magnetic field penetration depth.
5. The method of manufacturing a magnetic flux driven josephson parametric amplifier according to claim 1, wherein the method of forming the coplanar waveguide resonant cavity structure, the pump line structure, the ground line structure, the signal input wiring structure, and the pump input wiring structure in step 3) comprises:
3-1) etching the upper Nb layer until the Al-AlOx layer is exposed to define a Josephson junction region based on the upper Nb layer remaining after etching;
3-2) etching the Al-AlOx layer until the underlying Nb layer is exposed, wherein the Al-AlOx layer remaining after etching is located at the Josephson junction region;
3-3) etching the lower Nb layer until the substrate is exposed to form the coplanar waveguide resonant cavity structure, the pumping line structure, the ground line structure, the signal input wiring structure and the pumping input wiring structure; wherein the Josephson junction region is formed at an end of the coplanar waveguide resonant cavity structure and wherein the Nb/Al-AlOx/Nb Josephson junction is formed.
6. The method of making a magnetic flux driven josephson parametric amplifier of claim 5, wherein the area of the Al-AlOx layer remaining after etching is greater than the area of the upper Nb layer remaining after etching.
7. The method of claim 1, wherein the insulating layer comprises SiO2And the material of the superconducting thin film layer comprises Nb.
8. A flux-driven josephson parametric amplifier prepared by the preparation method of any one of claims 1 to 7, comprising:
a substrate;
a coplanar waveguide resonant cavity structure formed on the upper surface of the substrate, wherein Nb/Al-AlOx/Nb Josephson junctions are formed;
the pumping line structure is formed on the upper surface of the substrate and is positioned on one side of the coplanar waveguide resonant cavity structure;
the ground wire structure is formed on the upper surface of the substrate and is positioned between the coplanar waveguide resonant cavity structure and the pumping wire structure;
the signal input wiring structure is formed on the upper surface of the substrate and is positioned on the other side of the coplanar waveguide resonant cavity structure;
the pumping input wiring structure is formed on the upper surface of the substrate and is positioned on the other side of the pumping line structure;
an insulating layer formed on the coplanar waveguide resonant cavity structure, the pump line structure, the ground line structure, the signal input wiring structure, the pump input wiring structure and a portion of the upper surface of the substrate, and formed with a josephson junction via on the Nb/Al-AlOx/Nb josephson junction surface, a ground via on the ground line structure surface, an input signal pin via on the signal input wiring structure surface, and a pump input pin via on the pump input wiring structure surface;
a superconducting thin film layer formed on the Josephson junction via, the ground via, the input signal pin via, the pumping input pin via, and a portion of the upper surface of the insulating layer to electrically connect the Josephson junction via and the ground via, while forming a ground pin in the ground via, an input signal pin in the input signal pin via, and a pumping input pin in the pumping input pin via.
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| CN112885952A (en) * | 2021-02-19 | 2021-06-01 | 中国科学院物理研究所 | Josephson parametric amplifier and preparation method thereof |
| CN112885952B (en) * | 2021-02-19 | 2024-03-08 | 中国科学院物理研究所 | Josephson parametric amplifier and preparation method thereof |
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| CN111953308B (en) | 2022-07-12 |
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