CN108259014A - A kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication module - Google Patents

A kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication module Download PDF

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Publication number
CN108259014A
CN108259014A CN201810020974.4A CN201810020974A CN108259014A CN 108259014 A CN108259014 A CN 108259014A CN 201810020974 A CN201810020974 A CN 201810020974A CN 108259014 A CN108259014 A CN 108259014A
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China
Prior art keywords
josephson
impedance
aluminium film
impedance matching
planar waveguide
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CN201810020974.4A
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Chinese (zh)
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杨夏
朱美珍
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Hefei Native Quantum Computing Technology Co Ltd
Origin Quantum Computing Technology Co Ltd
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Hefei Native Quantum Computing Technology Co Ltd
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Priority to CN201810020974.4A priority Critical patent/CN108259014A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F7/00—Parametric amplifiers
    • H03F7/04—Parametric amplifiers using variable-capacitance element; using variable-permittivity element

Abstract

The invention discloses a kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication modules, belong to Josephson's parameter amplifier field.The present invention solves the problems, such as that the signal attenuation of impedance matching Josephson parameter amplifier in the prior art is larger, device volume is big.Impedance transformer, anharmonic resonance chamber and the pumped microwave circuit of impedance matching Josephson's parameter amplifier of the present invention all integrate on a silicon substrate, the second end of the impedance transformer is connected in series with the anharmonic resonance chamber using superconductor, the component of the present invention is in addition to capacitive insulating layer simultaneously, all material is all superconductor, so that the reflection and loss of the signal microwave of amplifier prepared by the present invention substantially reduce, attenuation constant is almost 0.The bandwidth of the amplifier of the present invention can reach more than 1GHz, can be operated in 5GHz 8GHz frequency ranges, while this invention simplifies preparation processes, improve the repeatability and yield rate of device preparation.

Description

A kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication module
Technical field
The present invention relates to Josephson's parameter amplifier field, specifically, being related to a kind of impedance matching Josephson parameter Amplifier and preparation method thereof, communication module.
Background technology
Josephson's parameter amplifier of present mainstream mainly has travelling-wave amplifier, the amplification of traditional narrow Josephson parameter Device and impedance matching Josephson's parameter amplifier etc..Wherein travelling-wave amplifier has many advantages, such as that with roomy, saturation power is high, but It is the complicated of it, preparation process needs extraordinary micro-nano technology technology and low-loss and insulating material, and common laboratory is very Hardly possible processing (A near-quantum-limited Josephson traveling-wave parametric amplifier, C.Macklin et.al.,Science 350 6258(2015)；Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching,T.C.White et.al.,Appl.Phys.Lett.106,242601(2015)).Traditional narrow Josephson's parameter amplifier is simple in structure, increases Benefit and noise, which disclosure satisfy that, measures needs, but its bandwidth is merely able to reach tens MHz levels, it is impossible to while measure multiple frequencies Rate microwave (Single-shot readout of a superconducting flux qubit with a flux-driven Josephson parametric amplifier,Z.R.Lin,et.al.Appl.Phys.Lett.103,132602 (2013)).Impedance matching Josephson parametric amplifier bandwidth can reach hundreds of MHz, can measure multiple microwave letters simultaneously Number, while preparation method is simple with respect to travelling-wave amplifier.
In the prior art, for the preparation of impedance matching Josephson's parameter amplifier, generally using impedance transformer and Prepared by the mode of anharmonic resonance chamber separation, wherein impedance transformer is prepared using printed wiring board, and anharmonic resonance chamber is in silicon chip Then upper preparation connects two parts using lead instrument, the defects of having：(1) impedance transformer is non-superconducting material, and signal is decayed It is larger；(2) integrated level is low, and device volume is big.
Invention content
1st, it to solve the problems, such as
It big is asked for the larger, device volume of signal attenuation of impedance matching Josephson parameter amplifier in the prior art Topic, the present invention provide a kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication module.The impedance of the present invention Impedance transformer, anharmonic resonance chamber and the pumped microwave circuit for matching Josephson's parameter amplifier all integrate on a silicon substrate, The second end of impedance transformer is connected in series with the anharmonic resonance chamber, is connected in series with using superconduction aluminium film, while the present invention For component in addition to capacitive insulating layer, all material is all superconductor, so that the signal of amplifier prepared by the present invention is micro- The reflection and loss of wave substantially reduce, and attenuation constant is almost 0.
2nd, technical solution
To solve the above problems, the present invention adopts the following technical scheme that.
The word that the present invention uses is defined as follows：
PMMA：English full name polymethyl methacrylate are most common positivity light in electron beam exposure technique Photoresist is reacted by monomers methyl methacrylate is aggregated；
MMA：English full name methyl methacrylate, methyl methacrylate；
Double-deck MMA/PMMA electron beam resists：Bottom is MMA photoresists, and upper strata is PMMA photoresists.Its underlayer thickness Can be 400nm-800nm, upper thickness can be 300nm-500nm；
Pumped microwave：Pumped microwave is the energy source of amplifier, and the energy of pumped microwave is turned using anharmonic resonance chamber The energy of signal microwave is turned to, realizes the amplification of signal microwave.
A kind of impedance matching Josephson parameter amplifier, including impedance transformer, anharmonic resonance chamber and pumped microwave electricity Road；
The first end of the impedance transformer is connect with the first signal input port, and the second of the impedance transformer End is connected in series with the anharmonic resonance chamber, and first signal input port is signal microwave input port to be amplified；
The anharmonic resonance chamber is that mutual inductance is connect with the pumped microwave circuit.
Method that impedance matching Josephson's parameter amplifier uses is prepared in the prior art as impedance transformer and anharmonic Prepared by the mode of resonant cavity separation, wherein impedance transformer is prepared using printed wiring board, and anharmonic resonance chamber is made on a silicon substrate It is standby, then connect two parts using lead instrument, the tangent loss angle of general printed wire plate material is δ=0.002, by α= It is 0.0013 that ktan δ, which obtain attenuation constant, and k is microwave propagation vector here, can cause the reflection and loss of signal microwave, limit Make gain and the bandwidth of amplifier, and impedance transformer, the anharmonic of impedance matching Josephson's parameter amplifier of the present invention Resonant cavity and pumped microwave circuit all integrate on a silicon substrate, the second end of the impedance transformer and the anharmonic resonance chamber string Connection connection, is connected in series with using superconductor, so that the reflection and loss of the signal microwave of amplifier prepared by the present invention It substantially reduces, attenuation constant is almost 0.
Preferably, the impedance transformer is gone here and there successively by the first co-planar waveguide, the second co-planar waveguide and third co-planar waveguide Connection is formed by connecting；
The anharmonic resonance chamber is composed in parallel by capacitance and superconducting quantum interference device；
The pumped microwave circuit is connected in series by magnetic flux offset line and second signal input port, the second signal The input port that input port is pumped microwave signal and magnetic flux offset signal shares；
The first end of first co-planar waveguide is connect with first signal input port, the first signal input Port is signal microwave input port to be amplified, and the second end of the third co-planar waveguide is connected company with the anharmonic resonance chamber It connects；
The superconducting quantum interference device is connect with the magnetic flux offset line mutual inductance.
Pumped microwave and signal microwave to be amplified are input in same port in device in the prior art, letter to be amplified Number microwave and pumped microwave can interfere with each other.It is micro- using the input pumping of second signal input port in technical scheme of the present invention Wave inputs signal microwave to be amplified using the first signal input port, and pumped microwave and signal microwave to be amplified make respectively It is inputted with obstructed port, avoids the interference to microwave signal to be amplified.
Preferably, the superconducting quantum interference device is nonlinear inductance.
Preferably, the capacitance is made of one insulating layer of folder among two superconducting flats, and the insulating layer is aluminium film surface Natural oxidizing layer.
The present invention uses insulating layer of the autoxidation aluminium as capacitance, it is not necessary to do insulating layer growth, simplify preparation process. The aluminium oxide of evaporation is used in the prior art as insulating layer, it is bad for the covering uniformity of lower metal, and autoxidation The natural oxidizing layer that aluminium is formed forms uniform oxide layer on film, the directional problems for the aluminum oxide film not evaporated, energy Enough comprehensive covering metal film surfaces, ensure that the reliability of device.The prior art uses the aluminium oxide of evaporation as insulating layer, It increases a photoetching and coating process, device preparation technology is more complicated.
Preferably, the impedance of first co-planar waveguide is 50 Ω；
The impedance of second co-planar waveguide is 40 Ω, and the length of second co-planar waveguide is 0.25L；
The impedance of the third co-planar waveguide is 58 Ω, and the length of the third co-planar waveguide is 0.5L；
Wherein, L is the signal microwave wavelength to be amplified；The frequency f of the impedance transformer can be determined by Lim, fim=v/L, v is spread speed of the signal microwave to be amplified in co-planar waveguide here,ε is base The dielectric constant of piece, clFor the light velocity in vacuum；
The frequency f of the anharmonic resonance chamber0Calculation formula：
Josephson's inductance LJFor：
LJ=Φ0/2πIc
Wherein, the IcFor the critical current of the superconducting quantum interference device, the Φ0It is for magnetic flux quanta, then described non- The frequency f of humorous resonant cavity0For：
C is the capacitance of the capacitance；
By changing the electric current on the magnetic flux offset line, the critical current of the superconducting quantum interference device can be adjusted Ic, and then adjust the frequency f of the anharmonic resonance chamber0, work as f0=fimWhen, the impedance matching Josephson parameter amplifier work Make in optimum state, i.e., the gain of described impedance matching Josephson parameter amplifier and bandwidth reach its maximum value, then institute The frequency range for stating the work of impedance matching Josephson's parameter amplifier is f0-(fBW/ 2) to f0+(fBW/ 2), wherein fBWFor institute The bandwidth of impedance matching Josephson's parameter amplifier is stated, the bandwidth of the impedance matching Josephson parameter amplifier refers to institute The gain for stating impedance matching Josephson's parameter amplifier drops to microwave signal to be amplified corresponding during the half of maximum gain Frequency；
Gain G is defined as G=log10(Pout/Pin), P herein, refer to the microwave input power signal to be amplified, PoutRefer to With the amplified output power of microwave signal to be amplified.
Existing amplifier operation is in 5GHz-6GHz ranges, maximum gain 20dB, maximum bandwidth 600MHz, this hair Bright amplifier is a kind of low-noise amplifier being operated under extremely low temperature, and the working frequency of the amplifier is in 5GHz-8GHz waves Section, highest-gain can reach more than 20dB, and bandwidth can reach more than 1GHz, and bandwidth of the invention is band of the prior art Nearly twice of wide 600MHz.Amplifier using the present invention, the number of signals that we can be measured that are existing amplifiers Nearly 2 times.
A kind of preparation method of impedance matching Josephson parameter amplifier, step are：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 30nm-100nm is plated on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 0.1nm/s-2nm/s；
B. the figure needed, impedance transformer, the first signal input port, magnetic flux biasing are prepared using ultraviolet photolithographic method Line, second signal input port, the bottom crown of capacitance and ground level are defined in this photoetching；
C. aluminium film is etched using wet etching method；
(2) second of plated film, photoetching
A. the top crown figure of the capacitance is prepared using electron beam lithography；
B. it is 10 in air pressure-3Pa-10-6The oxygen of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Change layer；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr- 500Torr, aluminium film aoxidize 5h-10h in purity oxygen and obtain pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of Pa, device is transmitted in evaporation cavity, in evaporation cavity Middle evaporation 50nm-100nm, aluminium film plated film rate are 0.1nm/s-2nm/s；
E. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl；
(3) third time plated film, photoetching
A. third time photoetching, superconducting quantum interference device, superconducting quantum interference device and ground level are prepared using electron beam lithography Connecting component, the connecting component of superconducting quantum interference device and capacitance, the connecting component of capacitance and impedance transformer is in this photoetching Defined in；
B. argon ion etching method removal aluminium film surface oxide layer, etch period 1min-5min, the voltage used and Electric current is respectively 100V-400V and 5mA-40mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 20nm-50nm, the use of angle of inclination is 20 ° -40 °；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.02Torr- are passed through in cavity 0.1Torr, oxidization time 10min-30min；
E. device sends back evaporation cavity, evaporates aluminium film 50nm-120nm, and angle of inclination is -20 ° -40 °；
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
Preferably, the wet etching method used in the step c of the step (1) is using aluminium film corrosive liquid, corrosion speed Rate is 0.8nm/s, and photoresist is cleaned using two pyrrolidones of monomethyl after etching.
Preferably, in a steps of the step (2), the glue of the electron beam lithography is bilayer MMA/PMMA electron beams Photoresist.
Preferably, in the b step of the step (2), etch period 1min-5min, the voltage and current difference used For 100V-400V and 5mA-40mA.
In the preparation method of the present invention, impedance transformer is prepared using micro-processing methods such as plated film, photoetching so that processing essence Higher is spent, device parameters is prepared and is more nearly design value, the prior art uses lead instrument connection impedance transformer and anharmonic resonance Chamber can cause the reflection and loss of signal microwave, limit gain and the bandwidth of amplifier, impedance transformer of the invention and non- The connection of humorous resonant cavity uses superconduction aluminium film, avoids this problem.Present impedance matching Josephson's amplifier bandwidth is 600MHz, the present invention in bandwidth can reach more than 1GHz so that measure quantum bit quantity can double left and right.
In the preparation method of the present invention, using autoxidation aluminium as capacitive insulating layer, it is not necessary to do insulating layer growth, simplify Preparation process uses the aluminium oxide of evaporation as insulating layer in the prior art, for the covering uniformity of lower metal bad, Natural oxidizing layer forms uniform oxide layer on film, without the directional problems of thin evaporated film, can cover metal foil comprehensively Film surface ensure that the reliability of device.It is not in short-circuit conditions to prepare in capacitive process, it is ensured that prepare device can Repeatability and high finished product rate.The prior art uses the aluminium oxide of evaporation to increase a photoetching and coating process as insulating layer, Device preparation technology is more complicated.In the prior art using electron beam lithography, film uses electron beam evaporation deposition, capacitive insulation Layer using evaporation aluminum oxide film, the present invention in capacitance use aluminium film surface natural oxidizing layer, reduce coating times, letter Preparation process is changed.
A kind of communication module, impedance matching Josephson's parameter amplifier, for being amplified to signal；And end Mouthful, for exporting the signal amplified by the impedance matching Josephson parameter amplifier.
3rd, advantageous effect
Compared with the prior art, beneficial effects of the present invention are：
(1) in the prior art, the method that impedance matching Josephson parameter amplifier uses is impedance transformer and anharmonic Prepared by the mode of resonant cavity separation, wherein impedance transformer is prepared using printed wiring board, and anharmonic resonance chamber is made on a silicon substrate It is standby, then connect two parts using lead instrument, the tangent loss angle of general printed wire plate material is δ=0.002, by α= It is 0.0013 that ktan δ, which obtain attenuation constant, and k is microwave propagation vector here, this can cause the reflection and loss of signal microwave, limit Make gain and the bandwidth of amplifier, and impedance transformer, the anharmonic of impedance matching Josephson's parameter amplifier of the present invention Resonant cavity and pumped microwave circuit all integrate on a silicon substrate, the second end of the impedance transformer and the anharmonic resonance chamber string Connection connection, is connected in series with using superconductor, so that the reflection and loss of the signal microwave of amplifier prepared by the present invention It substantially reduces, attenuation constant is almost 0；
(2) in the prior art, pumped microwave and signal microwave to be amplified are input in same port in device, to be amplified Signal microwave and pumped microwave can interfere with each other.In technical scheme of the present invention, second signal input port front pump is used Pu microwave inputs signal microwave to be amplified, pumped microwave and signal microwave point to be amplified using the first signal input port Port that Shi Yong be not obstructed inputs, and avoids the interference to microwave signal to be amplified；
(3) present invention uses insulating layer of the autoxidation aluminium as capacitance, it is not necessary to do insulating layer growth, simplify preparation work Skill.The aluminium oxide of evaporation is used in the prior art as insulating layer, it is bad for the covering uniformity of lower metal, and nature oxygen Change the natural oxidizing layer that aluminium is formed and uniform oxide layer is formed on film, the directional problems for the aluminum oxide film not evaporated, Can covering metal film surface comprehensively, ensure that the reliability of device.It is not in short circuit that the present invention, which is prepared in capacitive process, Situation, it is ensured that prepare the repeatability and high finished product rate of device.The prior art uses the aluminium oxide of evaporation as insulating layer, A photoetching and coating process are increased, device preparation technology is more complicated, and in the prior art using electron beam lithography, film makes Deposited by electron beam evaporation plated film, capacitive insulating layer using evaporation aluminum oxide film, in the present invention capacitance using aluminium film surface from Right oxide layer, reduces coating times, simplifies preparation process；
(4) existing amplifier operation is in 5GHz-6GHz ranges, maximum gain 20dB, maximum bandwidth 600MHz, sheet The amplifier of invention is a kind of low-noise amplifier being operated under extremely low temperature, and the working frequency of the amplifier is in 5GHz-8GHz Wave band, highest-gain can reach more than 20dB, and bandwidth can reach more than 1GHz, and bandwidth of the invention is of the prior art Nearly twice of bandwidth 600MHz.Amplifier using the present invention, the number of signals that we can be measured that are existing amplifiers Nearly 2 times；
(5) in preparation method of the invention, impedance transformer is prepared using micro-processing methods such as plated film, photoetching so that add Work precision higher prepares device parameters and is more nearly design value, and the prior art uses lead instrument connection impedance transformer and anharmonic Resonant cavity can cause the reflection and loss of signal microwave, limit gain and the bandwidth of amplifier, impedance transformer of the invention Connection with anharmonic resonance chamber avoids this problem using superconduction aluminium film.Present impedance matching Josephson's amplifier band Width is 600MHz, and the bandwidth in the present invention can reach more than 1GHz so that a left side can be doubled by measuring quantum bit quantity It is right；
Description of the drawings
The device that Fig. 1 is the present invention designs circuit diagram；
Fig. 2 is device global design figure；
Fig. 3 is superconducting quantum interference device and capacitor design figure；
Fig. 4 is device electron microscope；
When Fig. 5 is L=9.07mm, amplifier is in the amplification performance figure of best operating point；
When Fig. 6 is L=8.55mm, amplifier is in the amplification performance figure of best operating point；
When Fig. 7 is L=9.36mm, amplifier is in the amplification performance figure of best operating point.
In figure：1st, impedance transformer, the 11, first co-planar waveguide, the 12, second co-planar waveguide, 13, third co-planar waveguide, 14, First signal input port, 2, anharmonic resonance chamber, 21, superconducting quantum interference device, 22, capacitance, 23, superconducting quantum interference device and ground Flat connecting section part, 24, superconducting quantum interference device and capacitance connection component, 25, capacitance and impedance transformer connecting component, 3, pump Pu microwave circuit, 31, magnetic flux offset line, 32, second signal input port.
Specific embodiment
The present invention will be described in detail below in conjunction with the accompanying drawings.
Embodiment 1
As shown in Figure 1, Figure 2, Figure 3 shows, a kind of impedance matching Josephson parameter amplifier, it includes impedance transformer 1, non- Humorous resonant cavity 2 and pumped microwave circuit 3, the first end of the impedance transformer 1 is connect with the first signal input port 14, described The second end of impedance transformer 1 is connected in series with the anharmonic resonance chamber 2, and first signal input port 14 is to be amplified Signal microwave input port, the anharmonic resonance chamber 2 are that mutual inductance is connect with the pumped microwave circuit 3.
A kind of impedance matching Josephson parameter amplifier, it is micro- that it includes impedance transformer 1, anharmonic resonance chamber 2 and pumping Wave circuit 3, impedance transformer 1, anharmonic resonance chamber 2 and the pumped microwave circuit 3 of the amplifier all integrate on a silicon substrate, impedance Converter 1 and anharmonic resonance chamber 2 are connected in series with using superconduction aluminium film, and signal microwave to be amplified is from the first of impedance transformer 1 Signal input port 14 inputs, into anharmonic resonance chamber 2, the size of the bias current by adjusting pumped microwave circuit 3, so as to The critical current size of anharmonic resonance chamber 2 is adjusted, and then adjusts the frequency of anharmonic resonance chamber 2, and then amplifier operation is needing In the frequency of amplification.
Method that impedance matching Josephson's parameter amplifier uses is prepared in the prior art as impedance transformer and anharmonic Prepared by the mode of resonant cavity separation, wherein impedance transformer is prepared using printed wiring board, and anharmonic resonance chamber is made on a silicon substrate It is standby, then connect two parts using lead instrument, the tangent loss angle of general printed wire plate material is δ=0.002, by α= It is 0.0013 that ktan δ, which obtain attenuation constant, and k is microwave propagation vector here, can cause the reflection and loss of signal microwave, limit Make gain and the bandwidth of amplifier, and impedance transformer 1, the anharmonic of impedance matching Josephson's parameter amplifier of the present invention Resonant cavity 2 and pumped microwave circuit 3 all integrate on a silicon substrate, and impedance transformer 1, the first signal input port 14, anharmonic are common It shakes chamber 2 and pumped microwave circuit 3 is prepared using superconductor, second end and the anharmonic of the impedance transformer 1 are total to The chamber 2 that shakes is connected in series with, and is connected in series with using superconduction aluminium film, so that the reflection of the signal microwave of amplifier prepared by the present invention It is substantially reduced with loss, attenuation constant is almost 0.
As the optimal technical scheme of the present embodiment, with reference to shown in Fig. 1, Fig. 2, Fig. 3, the impedance transformer 1 is by first Co-planar waveguide 11, the second co-planar waveguide 12 and third co-planar waveguide 13 are connected together in series；The anharmonic resonance chamber 2 by Capacitance 22 and superconducting quantum interference device 21 compose in parallel；The pumped microwave circuit 3 is by magnetic flux offset line 31 and second signal Input port 32 is connected in series, and the second signal input port 32 shares defeated for pumped microwave signal and magnetic flux offset signal Inbound port；The first end of first co-planar waveguide 11 is connect with first signal input port 14, first signal Input port 14 is signal microwave input port to be amplified, the second end of the third co-planar waveguide 13 and the anharmonic resonance Chamber 2 is connected in series with；The superconducting quantum interference device 21 is connect with 31 mutual inductance of magnetic flux offset line.
Signal microwave to be amplified sequentially enters the first co-planar waveguide 11, the second coplanar wave from the first signal input port 14 12 and third co-planar waveguide 13 are led, enter back into the anharmonic resonance chamber 2 composed in parallel by capacitance 22 and superconducting quantum interference device 21.Pump Pu microwave signal and magnetic flux offset signal are inputted from second signal input port 32.The magnetic flux offset line 31 is for inclined Superconducting quantum interference device 21 is put, adjusts the equivalent inductance of superconducting quantum interference device 21, being operated in anharmonic resonance chamber 2 needs to amplify Microwave frequency, while for in superconducting quantum interference device 21 plus pumped microwave, pumped microwave to be to anharmonic resonance chamber 2 plus pumping Microwave provides energy source.It is to be amplified added by amplification anharmonic resonance chamber 2 when pumped microwave power is more than -40dBm Signal microwave.
Pumped microwave is inputted using second signal input port 32, is inputted using the first signal input port 14 to be amplified Signal microwave, pumped microwave and signal microwave to be amplified are inputted respectively using different ports, are avoided to signal to be amplified The interference of microwave.Pumped microwave and signal microwave to be amplified are input in same port in device in the prior art, to be amplified Signal microwave and pumped microwave can interfere with each other.
As the optimal technical scheme of the present embodiment, with reference to shown in Fig. 1, Fig. 2, Fig. 3, the capacitance 22 is put down by two superconductions One insulating layer of folder is formed among plate, and the insulating layer is the natural oxidizing layer of aluminium film surface.Using autoxidation aluminium as capacitance 22 insulating layer, it is not necessary to do insulating layer growth, simplify preparation process.The aluminium oxide of evaporation is used in the prior art as insulation Layer, natural oxidizing layer bad for the covering uniformity of lower metal, and being formed in this preferred embodiment using autoxidation aluminium Uniform oxide layer is formed on film, the directional problems for the aluminum oxide film not evaporated being capable of comprehensive covering metal film Surface ensure that the reliability of device.The prior art uses the aluminium oxide of evaporation to increase a photoetching and plating as insulating layer Membrane process, device preparation technology are more complicated.
As the optimal technical scheme of the present embodiment, with reference to shown in Fig. 1, Fig. 2, Fig. 3, the resistance of first co-planar waveguide 11 Resist for 50 Ω；The impedance of second co-planar waveguide 12 is 40 Ω, and the length of second co-planar waveguide 12 is 0.25L；It is described The impedance of third co-planar waveguide 13 is 58 Ω, and the length of the third co-planar waveguide 13 is 0.5L.
Different impedances is realized by changing co-planar waveguide center line width, center line and Horizon interplanar distance.Wherein, L is the signal microwave wavelength to be amplified；The frequency f of the impedance transformer 1 can be determined by Lim, fim=v/L, here v It is spread speed of the signal microwave to be amplified in co-planar waveguide,ε is the dielectric constant of substrate, clFor the light velocity in vacuum；
Superconducting quantum interference device 21 is formed by adding in two Josephson junctions in a superconducting loop, is evaporated using double angles Method prepares Josephson junction.The anharmonic resonance chamber is made of superconducting quantum interference device 21 and capacitance 22, and Superconducting Quantum is done The effect for relating to device is a nonlinear inductance, referred to as Josephson's inductance, Josephson's inductance LJFor：
LJ=Φ0/2πIc
Wherein, the IcFor the critical current of the superconducting quantum interference device 21, the Φ0It is for magnetic flux quanta, then described The frequency f of anharmonic resonance chamber 20For：
C is the capacitance of the capacitance 22；
By changing the electric current on the magnetic flux offset line 31, the critical electricity of the superconducting quantum interference device 21 can be adjusted Flow Ic, and then adjust the frequency f of the anharmonic resonance chamber 20, work as f0=fimWhen, the impedance matching Josephson parameter amplifier Optimum state is operated in, i.e., the gain of described impedance matching Josephson parameter amplifier and bandwidth reach its maximum value, then The frequency range of the work of the impedance matching Josephson parameter amplifier is f0-(fBW/ 2) to f0+(fBW/ 2), wherein fBWFor The bandwidth of the impedance matching Josephson parameter amplifier, the bandwidth of the impedance matching Josephson parameter amplifier refer to The gain of the impedance matching Josephson parameter amplifier drops to corresponding signal to be amplified micro- during the half of maximum gain Wave frequency rate；
Gain G is defined as G=log10(Pout/Pin), P herein, refer to the microwave input power signal to be amplified, PoutRefer to With the amplified output power of microwave signal to be amplified.
Pass through above-mentioned formula, it is known that, by changing impedance transformer length, capacitance size and superconducting quantum interference device Critical current can then control the working frequency of amplifier.The length L of signal microwave wavelength to be amplified is controlled in 7.2mm- 12mm ranges, Capacity control are controlled in 2fF-6fF, superconducting quantum interference device critical current in 2 μ A-5 μ A, the then work of amplifier Frequency range can reach 5GHz-8GHz, and then its highest-gain can reach more than 20dB, bandwidth can reach 1GHz with On.
Only the wavelength L of signal microwave to be amplified, the capacitance of capacitance 22, superconducting quantum interference device 21 are faced herein The impedance of boundary's electric current, the first co-planar waveguide 11, the impedance of the second co-planar waveguide 12, the length of the second co-planar waveguide 12, third are common Surface wave leads the relevant parameters such as 13 impedance, the length of third co-planar waveguide 13 and is illustrated, as needed can also be to correlation Parameter is converted, to obtain the amplifier of suitable working frequency, gain, bandwidth.
Existing amplifier operation is in 5GHz-6GHz ranges, maximum gain 20dB, maximum bandwidth 600MHz, as The optimal technical scheme of the present embodiment, the amplifier are a kind of low-noise amplifiers being operated under extremely low temperature, the work of amplifier Working frequency is in 5GHz-8GHz wave bands, and highest-gain can reach more than 20dB, and bandwidth can reach more than 1GHz, of the invention Bandwidth is nearly twice of bandwidth 600MHz of the prior art.Amplifier using the present invention, the letter that we can be measured that Number amount is nearly 2 times of existing amplifier.
A kind of communication module, by the obtained impedance matching Josephson parameter amplifier of the present invention and PORT COM group Into the impedance matching Josephson parameter amplifier is used to be amplified signal；The PORT COM, for exporting by institute The signal of impedance matching Josephson parameter amplifier amplification stated.
Embodiment 2
Impedance matching Josephson's parameter amplifier preparation method is as follows：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 30nm is plated first on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 0.1nm/s；
B. the figure needed, impedance transformer 1, the first signal input port 14, magnetic flux are prepared using ultraviolet photolithographic method Offset line 31, second signal input port 32, the bottom crown of capacitance 22, ground level are defined in this photoetching, when letter to be amplified The length L=9.07mm of number microwave wavelength, the impedance for defining the first co-planar waveguide 11 are 50 Ω, the impedance of the second co-planar waveguide 12 For 40 Ω, the length of the second co-planar waveguide 12 is 0.25L, and the impedance of third co-planar waveguide 13 is 58 Ω, third co-planar waveguide 13 Length for 0.5L, as previously mentioned, then the frequency of impedance transformer is 6.5GHz；
C. aluminium film is etched using wet etching method, using the A type aluminium film corrosive liquids of Transene companies, corrosion rate is about For 0.8nm/s, photoresist is cleaned using two pyrrolidones of monomethyl after etching.
(2) second of plated film, photoetching
A. 22 top crown figure of capacitance is prepared using electron beam lithography, the electron beam resist used is bilayer MMA/PMMA Photoresist, 20 μm of 22 area of capacitance, 10 μ m；
B. it is 10 in air pressure-3Pa-10-6The oxygen of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Change layer, ion source is the KDC75 models of Kaufman＆Robinson companies.Etch period is 1 minute, the voltage and current used Respectively 100V and 5mA, this condition can etch away a part of aluminium film, to ensure that oxide layer is cleaned up completely；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr, Aluminium film aoxidizes 5h in purity oxygen, obtains pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of the vacuum of Pa, device is transmitted in evaporation cavity, is being evaporated 50nm is evaporated in cavity, aluminium film plated film rate is 0.1nm/s；
E. extra aluminium film and photoresist are removed using two pyrrolidones of monomethyl.
The capacitance of preparation is about 3.1pF.
(3) third time plated film, photoetching
A. third time photoetching, the following figure of photoetching are prepared using electron beam lithography：Superconducting quantum interference device 21, Superconducting Quantum The connecting component 23 of interferometer 21 and ground level, the connecting component 24 of superconducting quantum interference device 21 and capacitance 22, capacitance 22 and resistance The connecting component 25 of resistance parallel operation 1；
B. the oxide layer of argon ion etching method removal aluminium film surface, etch period 1min, the voltage and current used Respectively 100V and 5mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 20nm, the use of angle of inclination is 20 °；
D. device is transmitted in oxidation chamber, is passed through purity oxygen in cavity, pellumina surface, air pressure 0.02Torr, Oxidization time is 10min；
E. device sends back evaporation cavity, evaporates aluminium film 50nm, and angle of inclination is -20 °, and plated film rate is 0.1nm/s.
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
The superconducting quantum interference device critical current of preparation is about 3 μ A, and can calculate anharmonic thus according to above-mentioned formula is total to Shake chamber highest frequency be 8.63GHz.
The performance test results of impedance matching Josephson's parameter amplifier that the present embodiment obtains are：As shown in figure 4, (a), it is the scanning electron microscopic picture in embodiment device in (b), wherein (a) is the scanned picture of impedance transformer 1, (b) is electricity Hold 22 and 21 picture of superconducting quantum interference device, illustration is the amplification picture of superconducting quantum interference device 22 in (b).Fig. 5 is amplifier In the amplification performance of best operating point, bandwidth can reach 1.1GHz, maximum gain 21dB, and the centre frequency of work is 6.5GHz meets with impedance transformer frequency.
In the technical solution of the present embodiment, whole elements of amplifier all integrate on a silicon substrate, and device volume is small, and institute There is element all to be prepared by superconductor, the loss of device can be substantially reduced；And the prior art makes resistance using printed wiring board Resistance parallel operation, the tangent loss angle of general printed wire plate material is δ=0.002, and obtaining attenuation constant by α=ktan δ is 0.0013, k is microwave propagation vector here, and the impedance transformer that the superconductor on substrate is used to prepare, attenuation constant are several It is 0, the loss of signal microwave to be amplified in impedance transformer substantially reduces；
In the technical solution of the present embodiment, impedance transformer is prepared using micro-processing methods such as plated film, photoetching so that processing Precision higher prepares device parameters and is more nearly design value, and the prior art connects impedance transformer using lead instrument and anharmonic is total to Shake chamber, can cause the reflection and loss of signal microwave, limits gain and the bandwidth of amplifier, impedance transformer of the invention and The connection of anharmonic resonance chamber uses superconduction aluminium film, avoids this problem.Present impedance matching Josephson's amplifier bandwidth It is 600MHz, the bandwidth in the present invention can reach more than 1GHz so that left and right can be doubled by measuring quantum bit quantity.
In the technical solution of the present embodiment, using autoxidation aluminium as capacitive insulating layer, it is not necessary to do insulating layer growth, letter Changed preparation process, used the aluminium oxide of evaporation in the prior art as insulating layer, for lower metal covering uniformity not Good, in the technical solution of the present embodiment, natural oxidizing layer forms uniform oxide layer on film, without the directionality of thin evaporated film Problem, can covering metal film surface comprehensively, ensure that the reliability of device.It is not in short-circuit feelings to prepare in capacitive process Condition, it is ensured that prepare the repeatability and high finished product rate of device.The prior art uses the aluminium oxide of evaporation to increase as insulating layer Add a photoetching and coating process, device preparation technology more complicated.In the prior art using electron beam lithography, film uses Electron beam evaporation deposition, capacitive insulating layer using evaporation aluminum oxide film, the present invention in capacitance use aluminium film surface nature Oxide layer reduces coating times, simplifies preparation process.
Embodiment 3
Impedance matching Josephson's parameter amplifier preparation method is as follows：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 60nm is plated first on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 1nm/s；
B. the figure needed, impedance transformer 1, the first signal input port 14, magnetic flux are prepared using ultraviolet photolithographic method Offset line 31, second signal input port 32, the bottom crown of capacitance 22, ground level are defined in this photoetching, when letter to be amplified The length L=8.55mm of number microwave wavelength, the impedance for defining the first co-planar waveguide 11 are 50 Ω, the impedance of the second co-planar waveguide 12 For 40 Ω, the length of the second co-planar waveguide 12 is 0.25L, and the impedance of third co-planar waveguide 13 is 58 Ω, third co-planar waveguide 13 Length for 0.5L, as previously mentioned, then the frequency of impedance transformer is 6.9GHz；
C. aluminium film is etched using wet etching method, using the A type aluminium film corrosive liquids of Transene companies, corrosion rate is about For 0.8nm/s, photoresist is cleaned using two pyrrolidones of monomethyl after etching.
(2) second of plated film, photoetching
A. 22 top crown figure of capacitance is prepared using electron beam lithography, the electron beam resist used is bilayer MMA/PMMA Photoresist, 20 μm of 22 area of capacitance, 10 μ m；
B. it is 10 in air pressure-3Pa-10-6The oxygen of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Change layer, ion source is the KDC75 models of Kaufman＆Robinson companies.Etch period is 3 minutes, the voltage and current used Respectively 200V and 22mA, this condition can etch away a part of aluminium film, to ensure that oxide layer is cleaned up completely；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr, Aluminium film aoxidizes 7.5h in purity oxygen, obtains pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of the vacuum of Pa, device is transmitted in evaporation cavity, is being evaporated 75nm is evaporated in cavity, aluminium film plated film rate is 1nm/s；
E. extra aluminium film and photoresist are removed using two pyrrolidones of monomethyl.
The capacitance of preparation is about 2.48pF.
(3) third time plated film, photoetching
A. third time photoetching, the following figure of photoetching are prepared using electron beam lithography：Superconducting quantum interference device 21, Superconducting Quantum The connecting component 23 of interferometer 21 and ground level, the connecting component 24 of superconducting quantum interference device 21 and capacitance 22, capacitance 22 and resistance The connecting component 25 of resistance parallel operation 1；
B. argon ion etching method removal aluminium film surface oxide layer, etch period 1min-5min, the voltage used and Electric current is respectively 200V and 23mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 35nm, the use of angle of inclination is 30 °；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.06Torr, oxygen are passed through in cavity The change time is 20min；
E. device sends back evaporation cavity, evaporates aluminium film 85nm, and angle of inclination is -30 °, and plated film rate is 1nm/s.
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
The superconducting quantum interference device critical current of preparation is about 3.2 μ A, and anharmonic can be calculated thus according to above-mentioned formula The highest frequency of resonant cavity is 9.96GHz.
The performance test results of impedance matching Josephson's parameter amplifier that the present embodiment obtains are：As shown in fig. 6, resistance The anti-gain for matching Josephson's parameter amplifier in best operating point, maximum gain reach 20dB, bandwidth 1GHz, in work Frequency of heart is about 6.9GHz, is met with impedance transformer frequency.
In the technical solution of the present embodiment, whole elements of amplifier all integrate on a silicon substrate, and device volume is small, and institute There is element all to be prepared by superconductor, the loss of device can be substantially reduced；And the prior art makes resistance using printed wiring board Resistance parallel operation, the tangent loss angle of general printed wire plate material is δ=0.002, and obtaining attenuation constant by α=ktan δ is 0.0013, k is microwave propagation vector here, and the impedance transformer that the superconductor on substrate is used to prepare, attenuation constant are several It is 0, the loss of signal microwave to be amplified in impedance transformer substantially reduces；
In the technical solution of the present embodiment, impedance transformer is prepared using micro-processing methods such as plated film, photoetching so that processing Precision higher prepares device parameters and is more nearly design value, and the prior art connects impedance transformer using lead instrument and anharmonic is total to Shake chamber, can cause the reflection and loss of signal microwave, limits gain and the bandwidth of amplifier, impedance transformer of the invention and Anharmonic resonance chamber is connected in series with using superconduction aluminium film, avoids this problem.Present impedance matching Josephson's amplifier band Width is 600MHz, and the bandwidth in the present invention can reach more than 1GHz so that a left side can be doubled by measuring quantum bit quantity It is right.
In the technical solution of the present embodiment, using autoxidation aluminium as capacitive insulating layer, it is not necessary to do insulating layer growth, letter Changed preparation process, used the aluminium oxide of evaporation in the prior art as insulating layer, for lower metal covering uniformity not Good, in the technical solution of the present embodiment, natural oxidizing layer forms uniform oxide layer on film, without the directionality of thin evaporated film Problem, can covering metal film surface comprehensively, ensure that the reliability of device.It is not in short-circuit feelings to prepare in capacitive process Condition, it is ensured that prepare the repeatability and high finished product rate of device.The prior art uses the aluminium oxide of evaporation to increase as insulating layer Add a photoetching and coating process, device preparation technology more complicated.In the prior art using electron beam lithography, film uses Electron beam evaporation deposition, capacitive insulating layer using evaporation aluminum oxide film, the present invention in capacitance use aluminium film surface nature Oxide layer reduces coating times, simplifies preparation process.
Embodiment 4
Impedance matching Josephson's parameter amplifier preparation method is as follows：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 100nm is plated first on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 2nm/s；
B. the figure needed, impedance transformer 1, the first signal input port 14, magnetic flux are prepared using ultraviolet photolithographic method Offset line 31, second signal input port 32, the bottom crown of capacitance 22, ground level are defined in this photoetching, when letter to be amplified The length L=9.36mm of number microwave wavelength, the impedance for defining the first co-planar waveguide 11 are 50 Ω, the impedance of the second co-planar waveguide 12 For 40 Ω, the length of the second co-planar waveguide 12 is 0.25L, and the impedance of third co-planar waveguide 13 is 58 Ω, third co-planar waveguide 13 Length for 0.5L, as previously mentioned, then the frequency of impedance transformer is 6.3GHz；
C. aluminium film is etched using wet etching method, using the A type aluminium film corrosive liquids of Transene companies, corrosion rate is about For 0.8nm/s, photoresist is cleaned using two pyrrolidones of monomethyl after etching.
(2) second of plated film, photoetching
A. 22 top crown figure of capacitance is prepared using electron beam lithography, the electron beam resist used is bilayer MMA/PMMA Photoresist, 28 μm of 22 area of capacitance, 10 μ m；
B. it is 10 in air pressure-3-10-6The oxidation of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Layer, ion source are the KDC75 models of Kaufman＆Robinson companies.Etch period is 5 minutes, the voltage and current used point Not Wei 400V and 40mA, this condition can etch away a part of aluminium film, to ensure that oxide layer is cleaned up completely；
C. it is 10 in air pressure-3-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr, aluminium Film aoxidizes 10h in purity oxygen, obtains pure alumina layer；
D. it is 10 maintaining air pressure-3-10-6Under conditions of the vacuum of Pa, device is transmitted in evaporation cavity, in evaporation cavity 100nm is evaporated in body, aluminium film plated film rate is 2nm/s；
E. using the extra aluminium film of two pyrrolidones pick-up point of monomethyl and photoresist.
The capacitance of preparation is about 4.34pF.
(3) third time plated film, photoetching
A. third time photoetching, the following figure of photoetching are prepared using electron beam lithography：Superconducting quantum interference device 21, superconduction amount The connecting component 23 of sub- interferometer 21 and ground level, the connecting component 24 of superconducting quantum interference device 21 and capacitance 22, capacitance 22 with The connecting component 25 of impedance transformer 1；
B. the oxide layer of argon ion etching method removal aluminium film surface, etch period 5min, the voltage and current used point It Wei not 400V and 40mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 50nm, the use of angle of inclination is 40 °；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.1Torr, oxygen are passed through in cavity The change time is 30min；
E. device sends back evaporation cavity, evaporates aluminium film 120nm, and angle of inclination is -40 °, and plated film rate is 2nm/s.
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
The superconducting quantum interference device critical current of preparation is about 2.7 μ A, and anharmonic can be calculated thus according to above-mentioned formula The highest frequency of resonant cavity is 6.92GHz.
The performance test results of impedance matching Josephson's parameter amplifier that the present embodiment obtains are：As shown in fig. 7, resistance The anti-gain for matching Josephson's parameter amplifier in best operating point, maximum gain reach 21.5dB, bandwidth 1GHz, work Centre frequency is about 6.3GHz, is met with impedance transformer frequency.
In the technical solution of the present embodiment, whole elements of amplifier all integrate on a silicon substrate, and device volume is small, and institute There is element all to be prepared by superconductor, the loss of device can be substantially reduced；And the prior art makes resistance using printed wiring board Resistance parallel operation, the tangent loss angle of general printed wire plate material is δ=0.002, and obtaining attenuation constant by α=ktan δ is 0.0013, k is microwave propagation vector here, and the impedance transformer that the superconductor on substrate is used to prepare, attenuation constant are several It is 0, the loss of signal microwave to be amplified in impedance transformer substantially reduces；
In the technical solution of the present embodiment, impedance transformer is prepared using micro-processing methods such as plated film, photoetching so that processing Precision higher prepares device parameters and is more nearly design value, and the prior art connects impedance transformer using lead instrument and anharmonic is total to Shake chamber, can cause the reflection and loss of signal microwave, limits gain and the bandwidth of amplifier, impedance transformer of the invention and The connection of anharmonic resonance chamber uses superconduction aluminium film, avoids this problem.Present impedance matching Josephson's amplifier bandwidth It is 600MHz, the bandwidth in the present invention can reach more than 1GHz so that left and right can be doubled by measuring quantum bit quantity.
In the technical solution of the present embodiment, using autoxidation aluminium as capacitive insulating layer, it is not necessary to do insulating layer growth, letter Changed preparation process, used the aluminium oxide of evaporation in the prior art as insulating layer, for lower metal covering uniformity not Good, natural oxidizing layer forms uniform oxide layer on film, without the directional problems of thin evaporated film, can cover metal comprehensively Film surface ensure that the reliability of device.It is not in short-circuit conditions to prepare in capacitive process, it is ensured for preparing device Repeatability and high finished product rate.The prior art uses the aluminium oxide of evaporation to increase a photoetching and plated film work as insulating layer Skill, device preparation technology are more complicated.In the prior art using electron beam lithography, film uses electron beam evaporation deposition, capacitance For insulating layer using the aluminum oxide film of evaporation, capacitance uses the natural oxidizing layer of aluminium film surface in the present invention, reduces plated film time Number, simplifies preparation process.
Embodiment 5
Impedance matching Josephson's parameter amplifier preparation method is as follows：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 30nm is plated first on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 0.1nm/s；
B. the figure needed, impedance transformer 1, the first signal input port 14, magnetic flux are prepared using ultraviolet photolithographic method Offset line 31, second signal input port 32, the bottom crown of capacitance 22, ground level are defined in this photoetching, when letter to be amplified The length L=7.2mm of number microwave wavelength, the impedance for defining the first co-planar waveguide 11 are 50 Ω, the impedance of the second co-planar waveguide 12 For 40 Ω, the length of the second co-planar waveguide 12 is 0.25L, and the impedance of third co-planar waveguide 13 is 58 Ω, third co-planar waveguide 13 Length for 0.5L, as previously mentioned, then the frequency of impedance transformer is 8GHz；
C. aluminium film is etched using wet etching method, using the A type aluminium film corrosive liquids of Transene companies, corrosion rate is about For 0.8nm/s, photoresist is cleaned using two pyrrolidones of monomethyl after etching.
(2) second of plated film, photoetching
A. 22 top crown figure of capacitance is prepared using electron beam lithography, the electron beam resist used is bilayer MMA/PMMA Photoresist, 15 μm of 22 area of capacitance, 10 μ m；
B. it is 10 in air pressure-3Pa-10-6The oxygen of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Change layer, ion source is the KDC75 models of Kaufman＆Robinson companies.Etch period is 1 minute, the voltage and current used Respectively 100V and 5mA, this condition can etch away a part of aluminium film, to ensure that oxide layer is cleaned up completely；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr, Aluminium film aoxidizes 5h in purity oxygen, obtains pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of the vacuum of Pa, device is transmitted in evaporation cavity, is being evaporated 50nm is evaporated in cavity, aluminium film plated film rate is 0.1nm/s；
E. using the extra aluminium film of two pyrrolidones pick-up point of monomethyl and photoresist.
The capacitance of preparation is about 2.4pF.
(3) third time plated film, photoetching
A. third time photoetching, the following figure of photoetching are prepared using electron beam lithography：Superconducting quantum interference device 21, Superconducting Quantum The connecting component 23 of interferometer 21 and ground level, the connecting component 24 of superconducting quantum interference device 21 and capacitance 22, capacitance 22 and resistance The connecting component 25 of resistance parallel operation 1；
B. the oxide layer of argon ion etching method removal aluminium film surface, 1min during etching, the voltage and current difference used For 100V and 5mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 20nm, the use of angle of inclination is 40 °；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.01Torr, oxygen are passed through in cavity The change time is 20min；
E. device sends back evaporation cavity, evaporates aluminium film 50nm, and angle of inclination is -40 °, and plated film rate is 0.1nm/s.
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
The superconducting quantum interference device critical current of preparation is about 3.2 μ A, and anharmonic can be calculated thus according to above-mentioned formula The highest frequency of resonant cavity is 10.1GHz.
Amplifier is in the amplification performance of best operating point, and bandwidth can reach 1.1GHz, maximum gain 20dB, work Centre frequency is 8GHz, is met with impedance transformer frequency.
Embodiment 6
Impedance matching Josephson's parameter amplifier preparation method is as follows：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 30nm is plated first on cleaned substrate, aluminium film uses high vacuum electron beam evaporation plating Film, plated film rate are 0.1nm/s；
B. the figure needed, impedance transformer 1, the first signal input port 14, magnetic flux are prepared using ultraviolet photolithographic method Offset line 31, second signal input port 32, the bottom crown of capacitance 22, ground level are defined in this photoetching, when letter to be amplified The length L=11.8mm of number microwave wavelength, the impedance for defining the first co-planar waveguide 11 are 50 Ω, the impedance of the second co-planar waveguide 12 For 40 Ω, the length of the second co-planar waveguide 12 is 0.25L, and the impedance of third co-planar waveguide 13 is 58 Ω, third co-planar waveguide 13 Length for 0.5L, as previously mentioned, then the frequency of impedance transformer is 5GHz；
C. aluminium film is etched using wet etching method, using the A type aluminium film corrosive liquids of Transene companies, corrosion rate is about For 0.8nm/s, photoresist is cleaned using two pyrrolidones of monomethyl after etching.
(2) second of plated film, photoetching
A. 22 top crown figure of capacitance is prepared using electron beam lithography, the electron beam resist used is bilayer MMA/PMMA Photoresist, 25 μm of 22 area of capacitance, 10 μ m；
B. it is 10 in air pressure-3Pa-10-6The oxygen of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa Change layer, ion source is the KDC75 models of Kaufman＆Robinson companies.Etch period is 1 minute, the voltage and current used Respectively 100V and 5mA, this condition can etch away a part of aluminium film, to ensure that oxide layer is cleaned up completely；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr, Aluminium film aoxidizes 5h in purity oxygen, obtains pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of the vacuum of Pa, device is transmitted in evaporation cavity, is being evaporated 50nm is evaporated in cavity, aluminium film plated film rate is 0.1nm/s；
E. extra aluminium film and photoresist are removed using two pyrrolidones of monomethyl.
The capacitance of preparation is about 3.9pF.
(3) third time plated film, photoetching
A. third time photoetching, the following figure of photoetching are prepared using electron beam lithography：Superconducting quantum interference device 21, superconduction amount The connecting component 23 of sub- interferometer 21 and ground level, the connecting component 24 of superconducting quantum interference device 21 and capacitance 22, capacitance 22 with The connecting component 25 of impedance transformer 1；
B. the oxide layer of argon ion etching method removal aluminium film surface, etch period 1min, the voltage and current used Respectively 100V and 5mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film are prepared using double angle method of evaporating Thickness is 20nm, the use of angle of inclination is 30 °；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.02Torr, oxygen are passed through in cavity The change time is 30min；
E. device sends back evaporation cavity, evaporates aluminium film 50nm, and angle of inclination is -30 °, and plated film rate is 0.1nm/s.
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
The superconducting quantum interference device critical current of preparation is about 2 μ A, and can calculate anharmonic thus according to above-mentioned formula is total to Shake chamber highest frequency be 6.28GHz.
Amplifier is in the amplification performance of best operating point, and bandwidth can reach 1.0GHz, maximum gain 20dB, work Centre frequency is 5GHz, is met with impedance transformer frequency.
It is maximum by above example 2,3,4 as can be seen that the amplifier maximum gain in the present invention can reach 21dB Bandwidth can reach 1GHz.By changing the critical current of impedance transformer length, capacitance size and superconducting quantum interference device, The working frequency of amplifier can then be controlled.The length L controls of signal microwave wavelength to be amplified are in 7.2mm-12mm ranges, electricity Hold 22 capacitance control in 2fF-6fF, the critical current control of superconducting quantum interference device 21 is in 2 μ A-5 μ A, then amplifier Operating frequency range can reach 5GHz-8GHz.Herein only to the capacitance of the wavelength L of signal microwave to be amplified, capacitance 22 The impedance of value, the critical current of superconducting quantum interference device 21, the first co-planar waveguide 11, the impedance of the second co-planar waveguide 12, second The parameters such as the length of co-planar waveguide 12, the impedance of third co-planar waveguide 13, the length of third co-planar waveguide 13 are illustrated, root According to needing that relevant parameter can also be converted, to prepare the amplifier of suitable working frequency, gain, bandwidth.

Claims (10)

1. a kind of impedance matching Josephson parameter amplifier, which is characterized in that including impedance transformer (1), anharmonic resonance chamber (2) and pumped microwave circuit (3)；
The first end of the impedance transformer (1) is connect with the first signal input port (14), the impedance transformer (1) Second end be connected in series with the anharmonic resonance chamber (2), first signal input port (14) is micro- for signal to be amplified Wave input port；
The anharmonic resonance chamber (2) is that mutual inductance is connect with the pumped microwave circuit (3).
2. impedance matching Josephson parameter amplifier according to claim 1, which is characterized in that
The impedance transformer (1) by the first co-planar waveguide (11), the second co-planar waveguide (12) and third co-planar waveguide (13) according to It is secondary to be connected in series；
The anharmonic resonance chamber (2) is composed in parallel by capacitance (22) and superconducting quantum interference device (21)；
The pumped microwave circuit (3) is connected in series by magnetic flux offset line (31) and second signal input port (32), described The input port that second signal input port (32) is pumped microwave signal and magnetic flux offset signal shares；
The first end of first co-planar waveguide (11) is connect with first signal input port (14), first signal Input port (14) is signal microwave input port to be amplified, the second end of the third co-planar waveguide (13) and the anharmonic Resonant cavity (2) is connected in series with；
The superconducting quantum interference device (21) is connect with described magnetic flux offset line (31) mutual inductance.
3. impedance matching Josephson parameter amplifier according to claim 1, which is characterized in that the Superconducting Quantum Interferometer (21) is nonlinear inductance.
4. impedance matching Josephson parameter amplifier according to claim 2, which is characterized in that the capacitance (22) by One insulating layer of folder is formed among two superconducting flats, and the insulating layer is the natural oxidizing layer of aluminium film surface.
5. according to claim 1-4 any one of them impedance matching Josephson's parameter amplifiers, which is characterized in that
The impedance of first co-planar waveguide (11) is 50 Ω；
The impedance of second co-planar waveguide (12) is 40 Ω, and the length of second co-planar waveguide (12) is 0.25L；
The impedance of the third co-planar waveguide (13) is 58 Ω, and the length of the third co-planar waveguide (13) is 0.5L；
Wherein, L is the signal microwave wavelength to be amplified.
6. a kind of preparation method of impedance matching Josephson parameter amplifier described in claim 1, step are：
(1) first time plated film, photoetching
A. the aluminium film that thickness is 30nm-100nm is plated on cleaned substrate, aluminium film uses high vacuum electron beam evaporation coating, Plated film rate is 0.1nm/s-2nm/s；
B. the figure needed, impedance transformer (1), the first signal input port (14), magnetic flux are prepared using ultraviolet photolithographic method Offset line (31), second signal input port (32), the bottom crown of capacitance (22) and ground level are defined in this photoetching；
C. aluminium film is etched using wet etching method；
(2) second of plated film, photoetching
A. the top crown figure of the capacitance (22) is prepared using electron beam lithography；
B. it is 10 in air pressure-3Pa-10-6The oxide layer of argon ion etching method removal aluminium film surface is used in the vacuum cavity of Pa；
C. it is 10 in air pressure-3Pa-10-6Purity oxygen is passed through in the vacuum cavity of Pa, air pressure in cavity is made to reach 100Torr- 500Torr, aluminium film aoxidize 5h-10h in purity oxygen and obtain pure alumina layer；
D. it is 10 maintaining air pressure-3Pa-10-6Under conditions of Pa, device is transmitted in evaporation cavity, is evaporated in evaporation cavity 50nm-100nm, aluminium film plated film rate are 0.1nm/s-2nm/s；
E. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl；
(3) third time plated film, photoetching
A. third time photoetching, superconducting quantum interference device (21), superconducting quantum interference device (21) and ground level are carried out using electron beam Connecting component (23), the connecting component (24) of superconducting quantum interference device (21) and capacitance (22), capacitance (22) convert with impedance The connecting component (25) of device (1) is defined in this photoetching；
B. the oxide layer of argon ion etching method removal aluminium film surface, etch period 1min-5min, the voltage and current used Respectively 100V-400V and 5mA-40mA；
C. device is transmitted in evaporation cavity, and the first layer of Josephson junction, aluminium film thickness are prepared using double angle method of evaporating The use of angle of inclination it is 20 ° -40 ° for 20nm-50nm；
D. device is transmitted in oxidation chamber, and purity oxygen pellumina surface, air pressure 0.02Torr- are passed through in cavity 0.1Torr, oxidization time 10min-30min；
E. device sends back evaporation cavity, evaporates aluminium film 50nm-120nm, and angle of inclination is -20 ° -40 °；
F. extra aluminium film and photoresist are peeled off using two pyrrolidones of monomethyl.
7. the preparation method of impedance matching Josephson parameter amplifier according to claim 6, it is characterised in that：It is described The wet etching method used in the step c of step (1) is using aluminium film corrosive liquid, and corrosion rate 0.8nm/s is etched Afterwards photoresist is cleaned using two pyrrolidones of monomethyl.
8. the preparation method of impedance matching Josephson parameter amplifier according to claim 7, it is characterised in that：It is described In a steps of step (2), the glue of the electron beam lithography is bilayer MMA/PMMA electron beam resists.
9. the preparation method of impedance matching Josephson parameter amplifier according to claim 7 or 8, it is characterised in that： In the b step of the step (2), etch period 1min-5min, the voltage and current used be respectively 100V-400V and 5mA-40mA。
10. a kind of communication module, which is characterized in that join including claim 1-9 any one of them impedance matchings Josephson Amplifier is measured, for being amplified to signal；And port, for exporting by impedance matching Josephson's parameter amplifier The signal of amplification.
CN201810020974.4A 2018-01-10 2018-01-10 A kind of impedance matching Josephson parameter amplifier and preparation method thereof, communication module Pending CN108259014A (en)

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CN113424441B (en) * 2019-01-24 2023-03-28 芬兰国家技术研究中心股份公司 Josephson traveling wave parametric amplifier
CN113424441A (en) * 2019-01-24 2021-09-21 芬兰国家技术研究中心股份公司 Josephson traveling wave parametric amplifier
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CN111953308A (en) * 2020-08-21 2020-11-17 中国科学院上海微***与信息技术研究所 Magnetic flux driven Josephson parametric amplifier and preparation method thereof
CN111953308B (en) * 2020-08-21 2022-07-12 中国科学院上海微***与信息技术研究所 Magnetic flux driven Josephson parametric amplifier and preparation method thereof
CN112885952B (en) * 2021-02-19 2024-03-08 中国科学院物理研究所 Josephson parametric amplifier and preparation method thereof
CN112885952A (en) * 2021-02-19 2021-06-01 中国科学院物理研究所 Josephson parametric amplifier and preparation method thereof
CN114938207B (en) * 2022-05-06 2023-07-25 河南城建学院 Broadband Josephson parametric amplifier chip combined by multiple sections of impedance converters
WO2024082657A1 (en) * 2022-10-21 2024-04-25 腾讯科技（深圳）有限公司 Chip preparation method and system, and chip

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