CN111952322B - Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof - Google Patents
Flexible semiconductor film with periodically adjustable buckling structure and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
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- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 16
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229920005839 ecoflex® Polymers 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- -1 polydimethylsiloxane Polymers 0.000 claims description 2
- 238000011160 research Methods 0.000 abstract description 5
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- 239000010408 film Substances 0.000 description 56
- 239000010409 thin film Substances 0.000 description 13
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a semiconductor film with a flexible buckling structure and an adjustable period and a preparation method thereof, belonging to the technical field of nano film preparation. According to the invention, the periodic array arrangement hole microstructure is constructed on the semiconductor film, so that the period of the buckling structure of the semiconductor film is controlled on the premise of not changing the pre-stretching amount and the film property, the method is suitable for strain engineering research under various environments and conditions, and the resources are saved; and the flexible substrate is matched for use, so that the whole film has certain stretch resistance; in addition, the preparation process of the adjustable strain film is simple and easy to implement, and the regulation and control method is simple and easy to operate.
Description
Technical Field
The invention belongs to the technical field of nano-film preparation, and particularly relates to a semiconductor film with a flexible buckling structure and an adjustable period and a preparation method thereof.
Background
In the last 60s, scientists have developed the concept of flexible and extensible electronic devices, and in the past decades, flexible electronic devices, especially organic flexible electronic devices, such as flexible OLEDs, flexible organic solar cells, etc., have been rapidly developed along with technological advances and material science developments. In the field of mechanics, there has been early research on the theory of flexible structures, and among these theories, the buckling (buckling) model is considered as an effective way to achieve flexibility and extensibility of devices. As early as 2004, two-dimensional chevron buckling patterns were discovered and theoretically analyzed by Chen et al, which demonstrated that the generation of such buckling patterns was determined by the lowest energy state of the system. In 2005, Huang et al demonstrated by mechanistic theory: based on a one-dimensional buckling model theory, the relation between the buckling wavelength and amplitude of the rigid film and the thickness and modulus of the substrate film; and secondly, calculating the two-dimensional buckling shape of the film and the elastic field of the three-dimensional matrix through a two-dimensional finite thickness substrate model. Based on the two theoretical articles, the following research has been conducted to develop more flexible and ductile conventional semiconductor materials or devices. Professor j.a. rogers et al, UIUC published a study on Science to etch silicon into nano-stripes in 2006, and after buckling of silicon was achieved, the wavelength and amplitude of the buckling wave were measured by characterization methods and compared with previous pure theoretical model predictions to derive agreement between experiments and theory. The period of the corrugations of the buckling structure is a fixed value under the condition that the material property of the base film and the pretension amount of the base are determined.
The strained semiconductor film technology is widely applied to the integrated circuit process at the present stage, because the local stress in the semiconductor film improves the mobility of a current carrier, the period of regulating and controlling the semiconductor film with a buckling structure can bring about the change of the local stress in the film, and the electrical property of the semiconductor film is improved; and in the aspect of photoelectric sensor, the size of photocurrent can be regulated and controlled by regulating and controlling the area of the unit film area contacting with light at intervals by regulating and controlling the period of the buckling structure. Therefore, if the method for systematically regulating and controlling the periodic variation of the buckling structure of the semiconductor thin film can be realized under the condition of not changing the material properties and the stretching amount, the method is of great significance. At present, researches on the regulation and control of the period of a semiconductor buckling structure are few, and a patent of 'a flexible gradient strain film and a preparation method and application thereof' with publication number of CN110620140A obtains the gradient strain film by designing the geometric outline shape of the film, so that the period of the gradient strain film presents gradient change, but the scheme is difficult to accurately regulate and control the period as required; huang Yin et al increase the tensile strength by etching a trench in a PDMS substrate and transferring a silicon film, but do not relate to the control of the period of the flexure structure.
Disclosure of Invention
In view of the problems in the background art, the present invention is directed to a flexible semiconductor thin film with a periodically adjustable buckling structure and a method for manufacturing the same. According to the strain film, the hole microstructures which are arranged in a periodic array mode are constructed on the semiconductor film, so that the period of the constructed buckling structure is adjustable under the condition that the material property and the stretching amount are not changed, and the preparation method is simple and easy to realize.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the flexible semiconductor film with the periodically adjustable buckling structure comprises a flexible substrate and the semiconductor film with the buckling structure, wherein the semiconductor film is located on the surface of the flexible substrate, m × n holes are arranged in a periodic array, the ratio of the hole distance to the diameter of the holes is smaller than 3, a target period is set according to the actual period requirement, the distance between two adjacent holes perpendicular to the pre-stretching direction is called the hole distance, and the distance between two adjacent holes parallel to the pre-stretching direction is called the target period.
Further, the hole period provided on the semiconductor film may be a fixed period or a variable period.
Further, the semiconductor thin film material is silicon, gallium arsenide, germanium, or the like; the flexible substrate material is Polydimethylsiloxane (PDMS), Ecoflex and the like.
Further, the thickness of the semiconductor thin film is 40-500nm, and the thickness of the flexible substrate is 1-10 mm.
Furthermore, the diameter of the holes of the hole array in the step 1 is 4-42 μm, and the distance between two adjacent holes in the vertical pre-stretching direction and the parallel pre-stretching direction is 7.5-150 μm.
A preparation method of a flexible semiconductor film with a periodically adjustable buckling structure comprises the following steps:
and 3, transferring the semiconductor film with the hole array microstructure prepared in the step 1 to the flexible substrate stretched in the step 2, and releasing pre-stretching to obtain the required flexible semiconductor film with the periodically adjustable buckling structure.
Further, the pre-stretching treatment method in the step 2 is a thermal expansion method.
Further, the thermal expansion method is to heat the film to 110-180 ℃, wherein the pre-stretching of 1.88% can be obtained by heating to 120 ℃.
A periodic regulation and control method of a flexible semiconductor film with a periodically adjustable buckling structure comprises the following specific steps: the hole diameter and the hole distance in the hole array are changed, the period of the buckling structure is regulated, the smaller the ratio of the hole distance perpendicular to the pre-stretching direction to the hole diameter is, the better the regulation effect is, and when the ratio is larger than 3, the regulation effect is lost.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: according to the invention, the periodic array arrangement hole microstructure is constructed on the semiconductor film, so that the period of the semiconductor film buckling structure is controlled on the premise of not changing the prestretching amount and the film property, the semiconductor film buckling structure can be suitable for strain engineering research under various environments and conditions, and resources are saved; and the flexible substrate is matched for use, so that the whole film has certain stretch resistance; in addition, the preparation process of the adjustable strain film is simple and easy to implement, and the regulation and control method is simple and easy to operate.
Drawings
FIG. 1 is a schematic diagram of a hole array on a semiconductor film according to the present invention;
wherein, (a) is the structural diagram of the fixed period hole array, and (b) is the structural diagram of the variable period hole array.
FIG. 2 is a schematic view of a process for preparing a periodically tunable strained thin film according to the present invention.
FIG. 3 is an optical microscope image of a buckling structure of the ductile Si thin film according to the present invention;
wherein (a) is an optical micrograph of example 1; (b) is an optical micrograph of example 2; (c) is an optical micrograph of example 3.
FIG. 4 is a three-dimensional surface profile of a buckling structure of the ductile Si thin film according to the present invention;
wherein, (a) is the three-dimensional surface profile of example 1; (b) is a three-dimensional surface profile map of example 2; (c) is a three-dimensional surface profile of example 3.
FIG. 5 is a graph showing the comparison result between the target setting period and the actual period of the buckling structure of the extensible film of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
The flexible semiconductor film with the periodically adjustable buckling structure comprises a flexible substrate and the semiconductor film with the buckling structure, wherein the semiconductor film is located on the surface of the flexible substrate, the flexible semiconductor film is characterized in that m × n holes are arranged in a periodic array mode, m and n are positive integers, the structural schematic diagram is shown in figure 1, a and b are the width and the length of the semiconductor film respectively, c is a target period, D is a hole interval, D is a hole radius, and c, D and D are arranged as required, but the ratio of the interval between every two adjacent holes to the diameter of each hole is smaller than 3.
A preparation method of a flexible Si film with a periodically-adjustable buckling structure is shown in a schematic flow chart of FIG. 2, and comprises the following steps:
and 5, attaching the surface of the PDMS substrate irradiated by ultraviolet to the surface of the seal with the silicon film, heating at 120 ℃ for 3min, then removing the seal (the substrate has higher adhesiveness than the seal), cooling to room temperature to release pretension, and thus obtaining the extensible Si film with the adjustable buckling structure.
Example 1
A preparation method of a flexible Si film with a periodically adjustable buckling structure comprises the following steps:
and 5, attaching the surface of the PDMS substrate irradiated by ultraviolet to the surface of the seal with the silicon film, heating at 120 ℃ for 3min, then removing the seal (the substrate has higher adhesiveness than the seal), cooling to room temperature to release pretension, and thus obtaining the extensible Si film with the adjustable buckling structure.
Example 2
The method in example 1 was used to prepare tunable Si strained films, and only the target period lengths c were adjusted to 40 μm, 50 μm, 60 μm and 70 μm with gradual changes, while the other parameters were unchanged to prepare silicon films.
Example 3
The method in example 1 was used to prepare an adjustable Si strained thin film, with only hole diameter D set to 8 μm, hole pitch D set to 16 μm, target period length c set to 32 μm, and other parameters unchanged to prepare a silicon thin film.
FIG. 3 is an optical microscope photograph of a buckling structure of a Si thin film according to various embodiments of the present invention, wherein (a) is an optical microscope photograph of embodiment 1; (b) is an optical micrograph of example 2; (c) is an optical micrograph of example 3. From the microscopic picture, it can be seen visually that the semiconductor film corrugated structure is fixed at the holes of the hole array in the samples with different target periods, and the arrangement of the hole array really induces the formation of the semiconductor film buckling structure. Therefore, the hole array has modulation effect on the buckling structure of the film.
Fig. 4 is a three-dimensional surface profile of a buckling structure of an extensible Si thin film prepared according to various embodiments of the present invention, wherein (a) is the three-dimensional surface profile of example 1; (b) is a three-dimensional surface profile map of example 2; (c) is a three-dimensional surface profile of example 3. The fluctuation change of the sample surface can be known according to the color label in fig. 4, and the deeper the color is, the more downward (in the paper surface) the sample surface is sunken, namely the wave trough of the corrugated structure; the lighter the color, the more the sample surface bulges upwards (out of the paper plane), i.e. the wave crests of the corrugated structure. According to the colors in fig. 4, the holes of the hole arrays in the samples of different target periods are all located at the wave troughs of the buckling structure, so that the hole arrays fix the period of the buckling structure by pinning the adjacent wave troughs of the fixed buckling structure through two adjacent rows of hole arrays (target periods) parallel to the pre-stretching direction, and as the target period of the hole arrays increases, the distance between the wave troughs of the adjacent corrugated structures of the buckling structure increases, and the period of the buckling structure also gradually increases.
FIG. 5 is a graph showing the comparison result between the target setting period and the actual period of the buckling structure of the extensible film of the present invention. It can be seen from the figure that, under the condition that the ratio of the hole pitch to the hole diameter is 2, the actual period of the buckling structure conforms to the set target period, and the hole array microstructure has a good regulation and control effect on the buckling structure.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (9)
1. The flexible semiconductor film with the periodically adjustable buckling structure comprises a flexible substrate and a semiconductor film which is located on the surface of the flexible substrate and has the buckling structure, and is characterized in that m × n holes which are periodically arrayed are arranged on the semiconductor film with the buckling structure, the ratio of the hole distance to the diameter of the holes is smaller than 3, a target period is set according to actual period requirements, wherein the distance between two adjacent holes which are perpendicular to the pre-stretching direction of the flexible substrate is the hole distance, and the distance between two adjacent holes which are parallel to the pre-stretching direction of the flexible substrate is the target period.
2. The flexible semiconductor film with the periodically tunable buckling structure as claimed in claim 1, wherein the target period set on the semiconductor film is a fixed period or a variable period, the fixed period is the same as the target period between any two rows, and the variable period is different as the target period when at least two rows of holes exist.
3. The flexible semiconductor film with the periodically tunable buckling structure of claim 1, wherein the semiconductor film material is silicon, gallium arsenide, or germanium; the flexible substrate material is polydimethylsiloxane or Ecoflex.
4. The flexible semiconductor film with the periodically tunable buckling structure as claimed in claim 1, wherein the semiconductor film has a thickness of 40 to 500nm, and the flexible substrate has a thickness of 1 to 10 mm.
5. The flexible semiconductor film with a buckling structure having a periodically tunable function according to claim 1, wherein the holes in step 1 have a diameter of 4 to 42 μm, and the pitch of the holes and the target periodic length are 7.5 to 150 μm.
6. The method for preparing a flexible semiconductor film with a periodically tunable buckling structure as claimed in any one of claims 1 to 5, comprising the steps of:
step 1, preparing a periodically arranged hole array microstructure on a semiconductor film by adopting an etching method;
step 2, preparing a flexible substrate, pre-stretching the flexible substrate, and then keeping the flexible substrate in a stretching state;
and 3, transferring the semiconductor film with the hole array microstructure prepared in the step 1 to the flexible substrate stretched in the step 2, and releasing pre-stretching to obtain the required flexible semiconductor film with the periodic adjustable buckling structure.
7. The method for manufacturing a flexible semiconductor film with a periodically buckling-adjustable structure as claimed in claim 6, wherein the pre-stretching treatment method in step 2 is a thermal expansion method.
8. The method for preparing the flexible semiconductor film with the periodically buckling-adjustable structure as claimed in claim 7, wherein the thermal expansion method is to heat the film to 110-180 ℃, wherein the pre-stretching of the film is 1.88% when the film is heated to 120 ℃.
9. A periodic regulation and control method of a flexible semiconductor film with a periodically adjustable buckling structure is characterized by comprising the following steps: changing the hole diameter and the hole pitch of a hole array on a semiconductor film with a buckling structure on the surface of a flexible substrate to realize the regulation and control of the period of the buckling structure, wherein the smaller the ratio of the hole pitch to the hole diameter perpendicular to the pre-stretching direction of the flexible substrate is, the better the regulation and control effect is; and when the ratio of the hole space perpendicular to the pre-stretching direction of the flexible substrate to the diameter of the hole is more than 3, the regulation and control effect is lost.
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| CN107460542A (en) * | 2017-06-15 | 2017-12-12 | 南京大学 | A kind of preparation method of the stretchable crystalline semiconductor nano wire based on plane nano line Alignment Design and guiding |
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| CN110620140A (en) * | 2019-09-16 | 2019-12-27 | 电子科技大学 | Flexible gradient strain film and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7521292B2 (en) * | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
| EP3123532B1 (en) * | 2014-03-25 | 2018-11-21 | Matrix Industries, Inc. | Thermoelectric devices and systems |
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| CN101887935A (en) * | 2000-08-22 | 2010-11-17 | 哈佛学院董事会 | The elongation semiconductor that mixes, its growth comprises the device and the manufacturing thereof of this based semiconductor |
| JP2007281406A (en) * | 2006-04-07 | 2007-10-25 | Board Of Trustees Of The Univ Of Illinois | Shrinkable single crystal silicon for high performance electronics on rubber substrate |
| TW201717261A (en) * | 2006-04-07 | 2017-05-16 | 美國伊利諾大學理事會 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
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