CN111916539B - Front-mounted integrated unit diode chip - Google Patents
Front-mounted integrated unit diode chip Download PDFInfo
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- CN111916539B CN111916539B CN201910379235.9A CN201910379235A CN111916539B CN 111916539 B CN111916539 B CN 111916539B CN 201910379235 A CN201910379235 A CN 201910379235A CN 111916539 B CN111916539 B CN 111916539B
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- 238000009792 diffusion process Methods 0.000 claims abstract description 29
- 229910002601 GaN Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911252644.9A CN110931610B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
CN201910379235.9A CN111916539B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
PCT/CN2020/089212 WO2020224643A1 (en) | 2019-05-08 | 2020-05-08 | Formal integrated unit diode chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910379235.9A CN111916539B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911252644.9A Division CN110931610B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111916539A CN111916539A (en) | 2020-11-10 |
CN111916539B true CN111916539B (en) | 2022-04-19 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910379235.9A Active CN111916539B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
CN201911252644.9A Active CN110931610B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911252644.9A Active CN110931610B (en) | 2019-05-08 | 2019-05-08 | Front-mounted integrated unit diode chip |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN111916539B (en) |
WO (1) | WO2020224643A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112885936B (en) * | 2020-12-01 | 2022-04-22 | 北京工业大学 | Micro-LED array with transparent electrode structure and preparation method |
Citations (12)
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CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
CN102169941A (en) * | 2010-02-27 | 2011-08-31 | 三星Led株式会社 | Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus |
CN102544294A (en) * | 2012-02-28 | 2012-07-04 | 江苏新广联科技股份有限公司 | LED (Light Emitting Diode) chip capable of improving current transmission |
CN103985796A (en) * | 2013-02-05 | 2014-08-13 | 国际商业机器公司 | Electronic device |
CN204167323U (en) * | 2013-08-16 | 2015-02-18 | 首尔伟傲世有限公司 | Light-emitting diode |
US9324917B2 (en) * | 2012-03-07 | 2016-04-26 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
CN205194731U (en) * | 2015-11-18 | 2016-04-27 | 上海博恩世通光电股份有限公司 | Upside -down mounting LED chip |
CN106206899A (en) * | 2014-10-08 | 2016-12-07 | 美科米尚技术有限公司 | Micro-led, its operational approach and manufacture method |
CN106711301A (en) * | 2015-11-12 | 2017-05-24 | 美科米尚技术有限公司 | Light-emitting diode and manufacture method thereof |
CN107689407A (en) * | 2017-08-21 | 2018-02-13 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
CN107924968A (en) * | 2015-08-18 | 2018-04-17 | Lg 伊诺特有限公司 | The light-emitting element package of light-emitting component including light-emitting component and the light-emitting device including light-emitting element package |
CN108475711A (en) * | 2016-01-13 | 2018-08-31 | 首尔伟傲世有限公司 | Ultraviolet ray emitting element |
Family Cites Families (12)
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JP3772651B2 (en) * | 1996-03-25 | 2006-05-10 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
KR100631898B1 (en) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Gallium nitride based light emitting device having ESD protection capability and method for manufacturing same |
JP5130730B2 (en) * | 2007-02-01 | 2013-01-30 | 日亜化学工業株式会社 | Semiconductor light emitting device |
CN101661988A (en) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | Light emitting diode chip and manufacturing method thereof |
KR101114782B1 (en) * | 2009-12-10 | 2012-02-27 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the same |
CN103413875B (en) * | 2013-09-09 | 2016-05-11 | 聚灿光电科技股份有限公司 | A kind of preparation method of PN step of PN step, LED chip and LED chip of LED chip |
CN103855149A (en) * | 2014-02-20 | 2014-06-11 | 中国科学院半导体研究所 | Inverted high-voltage light-emitting diode and manufacturing method thereof |
CN204516759U (en) * | 2015-01-30 | 2015-07-29 | 大连德豪光电科技有限公司 | Flip LED chips |
CN209729940U (en) * | 2015-05-13 | 2019-12-03 | 首尔伟傲世有限公司 | Light-emitting component |
CN205488192U (en) * | 2016-04-07 | 2016-08-17 | 深圳市天瑞和科技发展有限公司 | Nitride -based flip -chip LED chip |
CN107516701B (en) * | 2017-07-14 | 2019-06-11 | 华灿光电(苏州)有限公司 | A kind of high pressure light-emitting diode chip and preparation method thereof |
CN108305924A (en) * | 2017-12-28 | 2018-07-20 | 映瑞光电科技(上海)有限公司 | A kind of light emitting diode of vertical structure and preparation method thereof |
-
2019
- 2019-05-08 CN CN201910379235.9A patent/CN111916539B/en active Active
- 2019-05-08 CN CN201911252644.9A patent/CN110931610B/en active Active
-
2020
- 2020-05-08 WO PCT/CN2020/089212 patent/WO2020224643A1/en active Application Filing
Patent Citations (13)
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CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
CN102169941A (en) * | 2010-02-27 | 2011-08-31 | 三星Led株式会社 | Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus |
CN102544294A (en) * | 2012-02-28 | 2012-07-04 | 江苏新广联科技股份有限公司 | LED (Light Emitting Diode) chip capable of improving current transmission |
US9324917B2 (en) * | 2012-03-07 | 2016-04-26 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
CN103985796A (en) * | 2013-02-05 | 2014-08-13 | 国际商业机器公司 | Electronic device |
CN204167323U (en) * | 2013-08-16 | 2015-02-18 | 首尔伟傲世有限公司 | Light-emitting diode |
CN106206899A (en) * | 2014-10-08 | 2016-12-07 | 美科米尚技术有限公司 | Micro-led, its operational approach and manufacture method |
CN107924968A (en) * | 2015-08-18 | 2018-04-17 | Lg 伊诺特有限公司 | The light-emitting element package of light-emitting component including light-emitting component and the light-emitting device including light-emitting element package |
CN106711301A (en) * | 2015-11-12 | 2017-05-24 | 美科米尚技术有限公司 | Light-emitting diode and manufacture method thereof |
CN205194731U (en) * | 2015-11-18 | 2016-04-27 | 上海博恩世通光电股份有限公司 | Upside -down mounting LED chip |
CN108475711A (en) * | 2016-01-13 | 2018-08-31 | 首尔伟傲世有限公司 | Ultraviolet ray emitting element |
EP3404726A1 (en) * | 2016-01-13 | 2018-11-21 | Seoul Viosys Co. Ltd. | Ultraviolet light-emitting device |
CN107689407A (en) * | 2017-08-21 | 2018-02-13 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN110931610A (en) | 2020-03-27 |
CN110931610B (en) | 2022-09-20 |
WO2020224643A1 (en) | 2020-11-12 |
CN111916539A (en) | 2020-11-10 |
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Effective date of registration: 20230407 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Southern University of Science and Technology Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230713 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Patentee after: Weilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Southern University of Science and Technology |
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CI03 | Correction of invention patent | ||
CI03 | Correction of invention patent |
Correction item: Patentee|Address Correct: Southern University of Science and Technology|No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province False: Weilang Technology (Shenzhen) Co.,Ltd.|Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Number: 30-01 Volume: 39 |
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Effective date of registration: 20230904 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Southern University of Science and Technology |