CN111883473B - Electrostatic chuck and wafer processing apparatus - Google Patents

Electrostatic chuck and wafer processing apparatus Download PDF

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Publication number
CN111883473B
CN111883473B CN202010630896.7A CN202010630896A CN111883473B CN 111883473 B CN111883473 B CN 111883473B CN 202010630896 A CN202010630896 A CN 202010630896A CN 111883473 B CN111883473 B CN 111883473B
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China
Prior art keywords
heater
electrostatic chuck
main surface
viewed
hole
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Active
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CN202010630896.7A
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Chinese (zh)
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CN111883473A (en
Inventor
穴田和辉
吉井雄一
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Toto Ltd
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Toto Ltd
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Priority claimed from JP2015238822A external-priority patent/JP5987966B2/en
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to CN202010630896.7A priority Critical patent/CN111883473B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/28—Chucks characterised by features relating primarily to remote control of the gripping means using electric or magnetic means in the chuck
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides an electrostatic chuck, comprising: a ceramic dielectric substrate which is a polycrystalline ceramic sintered body and has a 2 nd main surface on which a 1 st main surface of a treatment object is placed and which is opposite to the 1 st main surface; an electrode layer provided on the ceramic dielectric substrate; a base plate provided on the 2 nd main surface side and supporting the ceramic dielectric substrate; and a heater provided between the electrode layer and the base plate, wherein the base plate has: the through hole penetrates through the base plate; and a communication path for passing a medium for adjusting the temperature of the object to be processed, wherein at least a part of the heater is located on the through hole side when viewed from the 1 st part of the communication path closest to the through hole when viewed in a direction perpendicular to the 1 st main surface.

Description

Electrostatic chuck and wafer processing apparatus
The present application is a divisional application of the application patent application with the national application number of "2015166345. X", which has the application date of 2015, 12, 10, and the name of "electrostatic chuck and wafer processing apparatus".
Technical Field
Aspects of the present invention generally relate to an electrostatic chuck and a wafer processing apparatus.
Background
In a plasma processing chamber for performing etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, ashing, and the like, an electrostatic chuck is used as a method for adsorbing and holding a processing object such as a semiconductor wafer or a glass substrate.
The electrostatic chuck is manufactured by sandwiching an electrode between ceramic substrates such as alumina and firing the sandwiched electrodes. The electrostatic chuck applies electrostatic attraction power to the built-in electrode to attract a substrate such as a silicon wafer by electrostatic force.
In recent years, in etching apparatuses using plasma, there is a tendency for plasma to have a higher output. With the increase in the output of plasma, the heat supplied to the wafer increases. When the heat supplied to the wafer is relatively low, the temperature change of the electrostatic chuck is relatively small, and a relatively small chiller can cope with the temperature change. When the amount of heat supplied to the wafer is relatively low, the use of a cooling metal plate that does not require a coolant or the change of the chiller temperature can be adequately handled in order to achieve a desired temperature of the wafer during the process.
However, when the temperature of the ceramic base material increases due to relatively high heat supplied to the wafer, the wafer temperature increases. In this way, there is a problem that materials usable for wafer processing are limited to materials with high heat resistance.
On the other hand, there is an electrostatic chuck having a heater built therein in order to make the temperature distribution in the wafer surface uniform.
It is desirable to improve uniformity of temperature distribution within the wafer plane.
Patent document 1: japanese patent application laid-open No. 2008-300491
Patent document 2: japanese patent application laid-open No. 2004-312026
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide an electrostatic chuck and a wafer processing apparatus capable of improving uniformity of temperature distribution in an object to be processed.
According to one aspect of the present invention, there is provided an electrostatic chuck comprising: a ceramic dielectric substrate which is a polycrystalline ceramic sintered body and has a2 nd main surface on which a1 st main surface of a treatment object is placed and which is opposite to the 1 st main surface; an electrode layer provided on the ceramic dielectric substrate; a base plate provided on the 2 nd main surface side and supporting the ceramic dielectric substrate; and a heater provided between the electrode layer and the base plate, wherein the base plate has: a through hole penetrating through the base plate; and a communication path through which a medium for adjusting the temperature of the processing object passes, wherein at least a part of the heater is present on the through hole side when viewed from the 1 st part of the communication path closest to the through hole when viewed in a direction perpendicular to the 1 st main surface.
Drawings
Fig. 1 is a schematic cross-sectional view illustrating an electrostatic chuck structure according to the present embodiment.
Fig. 2 is a schematic plan view showing the vicinity of the through hole in the present embodiment.
Fig. 3 is a schematic plan view showing the vicinity of the through hole in the present embodiment.
Fig. 4 is a schematic plan view showing a folded portion of the heater according to the present embodiment.
Fig. 5 is a schematic plan view showing the vicinity of another through hole according to the present embodiment.
Fig. 6 (a) and 6 (b) are schematic plan views showing the vicinity of other through holes according to the present embodiment.
Fig. 7 (a) and 7 (b) are schematic plan views showing the vicinity of other through holes according to the present embodiment.
Fig. 8 is a graph illustrating an example of the relationship between the circumferential length ratio and the temperature decrease rate.
Fig. 9 is a graph illustrating an example of the relationship between the temperature deviation and the heater area ratio.
Fig. 10 is a graph illustrating an example of the relationship between the temperature deviation and the communication road area ratio.
Fig. 11 is a graph illustrating an example of a relationship between temperature deviation and heater area ratio with respect to communication passage area.
Fig. 12 (a) and 12 (b) are schematic plan views showing the heater turn-back portion.
Fig. 13 (a) and 13 (b) are schematic enlarged views of enlarged heater turn-back portions.
Fig. 14 is a graph illustrating an example of a relationship between a closest distance ratio to a distance between circular end portions and a temperature difference in an object plane of a treatment object.
Fig. 15 is a table illustrating an example of a relationship between a closest distance ratio to a distance between circular end portions and a temperature difference in an object plane of a processing object.
Fig. 16 (a) to 16 (e) are schematic diagrams illustrating an example of the temperature distribution in the object plane of the process.
Fig. 17 (a) and 17 (b) are schematic views illustrating another electrostatic chuck according to the present embodiment.
Fig. 18 is a graph illustrating an example of the relationship between the temperature deviation and the gap width of the bypass electrode.
Fig. 19 is a graph illustrating an example of a relationship between temperature deviation and gap depth of the bypass electrode.
Fig. 20 is a schematic cross-sectional view illustrating a wafer processing apparatus according to another embodiment of the present invention.
Symbol description
11-A ceramic dielectric substrate; 11 a-1 st main face; 11 b-main 2; 12-an electrode layer; 13-a protrusion; 14-groove; 20-connecting part; 50-base plate; 50 a-upper part; 50 b-lower part; 51-input path; 52-an output path; 53-an introduction path; 55-communication paths; 55a, 55b, 55 c-portion; 55 d-center; 57-through holes; 57 a-central axis; 57 b-straight line; 61-contact electrodes; 80-a voltage for adsorption holding; 100. 101-an electrostatic chuck; 110-a substrate for an electrostatic chuck; 111-1 st dielectric layer; 112-2 nd dielectric layer; 131-a heater; 131a, 131b, 131 c-portions; 131 d-center; 131 e-a turn-back part; 131 f-rounded ends; 132-heater electrode current lead-in portion; 133-current for heater; 134-a heater; 134 e-a return portion; 134 f-rounded ends; 135-1 st heater; 136-2 nd heater; 137-1 st heater; 138-heater 2; 139-bypass electrode; 139 a-1 st bypass electrode; 139 b-the 2 nd bypass electrode; 141-space part; 500-wafer handling device; 501-a processing vessel; 502-a process gas introduction port; 503-exhaust port; 504-a high frequency power supply; 510-upper electrode; 551-primary flow path; 552-secondary flow path.
Detailed Description
The 1 st invention is an electrostatic chuck, comprising: a ceramic dielectric substrate which is a polycrystalline ceramic sintered body and has a2 nd main surface on which a1 st main surface of a treatment object is placed and which is opposite to the 1 st main surface; an electrode layer provided on the ceramic dielectric substrate; a base plate provided on the 2 nd main surface side and supporting the ceramic dielectric substrate; and a heater provided between the electrode layer and the base plate, wherein the base plate has: a through hole penetrating through the base plate; and a communication path through which a medium for adjusting the temperature of the processing object passes, wherein at least a part of the heater is present on the through hole side when viewed from the 1 st part of the communication path closest to the through hole when viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes. Further, even in the vicinity of the through hole, the cooling spot region which is most difficult to heat is made substantially the same as the hot spot region which is most difficult to cool, so that the balance between heating and cooling can be easily maintained, and the uniformity of the temperature distribution in the object plane to be processed can be improved.
In the invention 2, in the invention 1, the distance between the 1 st portion and the center axis of the through hole is larger than the distance between the 2 nd portion of the heater closest to the through hole and the center axis of the through hole, as viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes.
In the invention 3, the distance between the center of a1 st virtual circle passing through any 2 parts of the 1 st part and the through hole side in the communication path and the center of a 2 nd virtual circle passing through any 2 parts of the 2 nd part and the through hole side in the heater is 0.2 mm or less when viewed in the direction perpendicular to the 1 st main surface in the invention 2.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes.
In the invention 4, the center of a1 st virtual circle passing through any 2 parts on the through hole side of the 1 st part and the communication path overlaps with the center of a 2 nd virtual circle passing through any 2 parts on the through hole side of the 2 nd part and the heater, as viewed in the direction perpendicular to the 1 st main surface, in the invention 2.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes.
The 5 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st aspect of the present invention, wherein a width of the communication path in the 1 st portion is wider than a width of the heater in the 2 nd portion when viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes.
In the invention 6, in the invention 3 or 4, the length of the portion where the 2 nd virtual circle intersects the heater is 50% or more and 80% or less with respect to the circumferential length of the 2 nd virtual circle when viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the area that is most difficult to heat is made substantially the same as the area that is most difficult to cool, so that the range of uncontrolled temperature adjustment in the object plane of the processing object can be limited. This can improve uniformity of temperature distribution in the object plane of the processing object in other regions than the through holes.
The 7 th aspect of the present invention is the electrostatic chuck according to any one of 1 st to 6 th aspects of the present invention, wherein the heater comprises: a1 st heater having a1 st turn-back portion bent from a1 st direction toward a 2 nd direction different from the 1 st direction; and a 2 nd heater provided close to the 1 st heater and having a 2 nd folded portion curved from a 3 rd direction toward a4 rd direction different from the 3 rd direction, wherein a closest distance between the 1 st folded portion and the 2 nd folded portion is 50% or more and less than 100% with respect to a distance between a circular end of the 1 st folded portion and a circular end of the 2 nd folded portion.
According to this electrostatic chuck, since the approaching distance between the plurality of heaters is defined in order to define the density of the space portion at the portion where the folded portions of the plurality of heaters approach, the temperature controllability of the object to be processed can be improved, and the uniformity of the temperature distribution in the object to be processed can be improved.
The 8 th invention is the electrostatic chuck according to any one of the 1 st to 7 th inventions, wherein the area ratio of the heater is 20% to 80% with respect to the area of the ceramic dielectric substrate when viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the heater is arranged at an appropriate density, so that the uniformity of the temperature distribution in the object plane of the process can be improved.
The 9 th invention is the electrostatic chuck according to any one of the 1 st to 8 th inventions, wherein the area ratio of the communication path is 20% to 80% with respect to the area of the ceramic dielectric substrate when viewed in a direction perpendicular to the 1 st main surface.
According to the electrostatic chuck, the communication paths are arranged at an appropriate density, so that the uniformity of the temperature distribution in the object plane to be processed can be improved.
The 10 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st to 9 th aspects of the present invention, wherein an area ratio of the heater with respect to an area of the communication path is 60% or more and 180% or less when viewed in a direction perpendicular to the 1 st main surface.
According to this electrostatic chuck, the communication path and the heater are arranged at appropriate densities, so that the uniformity of the temperature distribution in the object plane of the processing object can be improved.
The 11 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st aspect of the present invention to the 1 st aspect of the present invention, further comprising a plurality of bypass electrodes provided between the electrode layer and the base plate and electrically connected to the heater, wherein a distance between adjacent bypass electrodes among the plurality of bypass electrodes is 0.05 mm or more and 10mm or less.
According to the electrostatic chuck, the bypass electrode is provided, so that the degree of freedom in arrangement of the heater can be improved. Further, by defining the gap width between the bypass electrodes, heat transfer unevenness due to the bypass electrode gap is suppressed. This can improve the uniformity of the temperature distribution in the object plane.
The 12 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st aspect of the present invention to the 1 st aspect of the present invention, further comprising a plurality of bypass electrodes provided between the electrode layer and the base plate and electrically connected to the heater, wherein a length of a region between adjacent bypass electrodes among the plurality of bypass electrodes in a direction perpendicular to the 1 st main surface is 0.01 mm or more and 1 mm or less.
According to the electrostatic chuck, the bypass electrode is provided, so that the degree of freedom in arrangement of the heater can be improved. Further, by defining the gap depth between the bypass electrodes, heat transfer unevenness due to the bypass electrode gap is suppressed. This can improve the uniformity of the temperature distribution in the object plane.
The 13 th invention is a wafer processing apparatus comprising the electrostatic chuck according to any one of the 1 st invention to the 12 th invention.
According to this wafer processing apparatus, the uniformity of the temperature distribution in the object plane of the processing object can be improved.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.
Fig. 1 is a schematic cross-sectional view illustrating an electrostatic chuck structure according to the present embodiment.
As shown in fig. 1, an electrostatic chuck 100 according to the present embodiment includes: a ceramic dielectric substrate 11, an electrode layer 12, a heater 131, and a base plate 50. The ceramic dielectric substrate 11 is mounted on the base plate 50.
The ceramic dielectric substrate 11 is a flat plate-like base material composed of, for example, a polycrystalline ceramic sintered body, and includes: a1 st main surface 11a of a processing object W such as a semiconductor wafer is placed; and a2 nd main surface 11b on the opposite side of the 1 st main surface 11 a.
Examples of the crystalline material included in the ceramic dielectric substrate 11 include Al 2O3、Y2O3 and YAG. By using such a material, the infrared ray transmittance, the dielectric strength, and the plasma resistance of the ceramic dielectric substrate 11 can be improved.
The electrode layer 12 is provided between the 1 st main surface 11a and the 2 nd main surface 11 b. That is, the electrode layer 12 is formed to be inserted into the ceramic dielectric substrate 11. The electrode layer 12 is integrally sintered to the ceramic dielectric substrate 11. The electrostatic chuck substrate 110 is a plate-like structure including a ceramic dielectric substrate 11 and an electrode layer 12 provided on the ceramic dielectric substrate 11.
The electrode layer 12 is not limited to being provided between the 1 st main surface 11a and the 2 nd main surface 11b, and may be provided on the 2 nd main surface 11b. Therefore, the electrode layer 12 is not limited to be integrally sintered to the ceramic dielectric substrate 11.
By applying the attraction holding voltage 80 to the electrode layer 12 of the electrostatic chuck 100, electric charges are generated on the 1 st main surface 11a side of the electrode layer 12, and the object W to be processed is attracted and held by electrostatic force. By flowing the heater current 133 through the heater electrode current introduction portion 132, heat can be generated and the temperature of the processing object W can be increased.
The ceramic dielectric substrate 11 has: a 1 st dielectric layer 111 between the electrode layer 12 and the 1 st main surface 11 a; and a 2 nd dielectric layer 112 between the electrode layer 12 and the 2 nd main surface 11 b. The heater 131 is built in the 2 nd dielectric layer 112, for example. However, the installation method of the heater 131 is not limited to the built-in type, and a recess may be formed in the 1 st dielectric layer 111 or the 2 nd dielectric layer 112 to bond the heater metal, or a dielectric having a built-in heater may be bonded or laminated to the 2 nd dielectric layer 112. The shape of the heater electrode current introduction portion 132 is not particularly limited to metal embedding, bonding, and the like.
In the electrostatic chuck 100 shown in fig. 1, the heater 131 is disposed closer to the electrode layer 12 side than the 2 nd main surface 11 b. However, the heater 131 may be provided at the same position as the 2 nd main surface 11b or may be provided on the opposite side of the electrode layer 12 when viewed from the 2 nd main surface 11 b.
When the heater 131 is provided closer to the electrode layer 12 than the 2 nd main surface 11b, for example, the electrode and the heater may be printed on a printed circuit board (GREEN SHEET), and the stacked printed circuit board may be incorporated in a sintered body.
When the heater 131 is provided at the same position as the 2 nd main surface 11b, it may be formed on the 2 nd main surface 11b by a suitable method such as screen printing, or may be formed by a method such as solvolysis, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition).
In the embodiment, the position, structure, and the like of the heater 131 are not particularly limited as long as the heater 131 can be used for controlling the in-plane temperature distribution of the processing object W. For example, the heater 131 may be provided inside the ceramic dielectric substrate 11, or may be provided as a member different from the ceramic dielectric substrate 11. The heater 131 may be sandwiched between the base plate 50 and the ceramic dielectric substrate 11. The heater 131 may also be a conductor, insulator plate, or heater plate containing thermoelectric elements. The heater 131 may be incorporated in the ceramic, or the coating process may be performed on the 2 nd main surface 11b side of the ceramic dielectric substrate 11. The method of manufacturing the heater 131 is not particularly limited.
In the description of the present embodiment, the direction connecting the 1 st main surface 11a and the 2 nd main surface 11b is referred to as the Z direction, 1 direction orthogonal to the Z direction is referred to as the X direction, and the direction orthogonal to the Z direction and the X direction is referred to as the Y direction.
The electrode layer 12 is provided along the 1 st main surface 11a and the 2 nd main surface 11 b. The electrode layer 12 is an adsorption electrode for adsorbing and holding the object W to be processed. The electrode layer 12 may be either monopolar or bipolar. In addition, the electrode layer 12 may be of a three-pole type or of another multi-pole type. The number of electrode layers 12 and the configuration of the electrode layers 12 are appropriately selected. The electrode layer 12 shown in fig. 1 is bipolar, and the 2-pole electrode layer 12 is provided on the same surface.
The infrared spectral transmittance of at least the 1 st dielectric layer 111 in the ceramic dielectric substrate 11 is preferably 20% or more. In the present embodiment, the infrared spectral transmittance is a value when converted into a thickness of 1 mm.
Since the infrared spectral transmittance of at least the 1 st dielectric layer 111 in the ceramic dielectric substrate 11 is 20% or more, the infrared rays emitted from the heater 131 in a state where the object W to be processed is placed on the 1 st main surface 11a can efficiently pass through the ceramic dielectric substrate 11. Thus, heat is less likely to accumulate on the object W, and the temperature controllability of the object W is improved.
For example, when the electrostatic chuck 100 is used in a combustion chamber for performing plasma processing, the temperature of the object W tends to increase with an increase in plasma energy. In the electrostatic chuck 100 of the present embodiment, heat transferred to the processing object W by the plasma energy is efficiently transferred to the ceramic dielectric substrate 11. The heat transferred to the ceramic dielectric substrate 11 by the heater 131 is efficiently transferred to the object W to be processed. Thus, heat transfer is efficiently performed, and the object to be processed W can be easily maintained at a desired temperature.
In the electrostatic chuck 100 according to the present embodiment, the 1 st dielectric layer 111 is preferably used, and the 2 nd dielectric layer 112 also has an infrared spectral transmittance of 20% or more. Since the 1 st dielectric layer 111 and the 2 nd dielectric layer 112 have an infrared spectral transmittance of 20% or more, the infrared rays emitted from the heater 131 pass through the ceramic dielectric substrate 11 more efficiently, and the temperature controllability of the object W to be processed can be improved.
As described above, the ceramic dielectric substrate 11 is mounted on the base plate 50. When the ceramic dielectric substrate 11 is mounted on the base plate 50, a heat resistant resin such as silica gel, indium bonding, brazing, or the like is used. The bonding material may be appropriately selected from the viewpoints of use temperature band, cost, and the like, but a material that is easily transparent to infrared rays is more preferable.
The base plate 50 is divided into an upper portion 50a and a lower portion 50b made of aluminum, for example. Brazing, electron beam welding, diffusion bonding, or the like may be employed in the connection of the upper portion 50a and the lower portion 50b. However, the method of manufacturing the base plate 50 is not limited to the above.
A communication passage 55 is provided at a boundary portion between the upper portion 50a and the lower portion 50 b. That is, the communication path 55 is provided inside the base plate 50. One end of the communication path 55 is connected to the input path 51. The other end of the communication path 55 is connected to the output path 52.
The base plate 50 plays a role of adjusting the temperature of the ceramic dielectric substrate 11. For example, when cooling the ceramic dielectric substrate 11, the cooling medium flows into the communication path 55 through the input path 51, the cooling medium is passed through the communication path 55, and the cooling medium flows out of the communication path 55 through the output path 52. Thereby, the ceramic dielectric substrate 11 mounted thereon can be cooled by absorbing heat of the base plate 50 by the cooling medium.
On the other hand, when the ceramic dielectric substrate 11 is heated, a heating medium may be introduced into the communication path 55. Alternatively, the heater 131 may be incorporated in the base plate 50. In this way, when the temperature of the ceramic dielectric substrate 11 is adjusted by the base plate 50, the temperature of the object W to be processed sucked and held by the electrostatic chuck 100 can be easily adjusted.
In the cross section of fig. 1, the lateral dimension Dh (corresponding to a width D3 described later) of the communication path 55 is smaller than the longitudinal dimension Dv (length in the Z direction) of the communication path 55. This can improve the controllability of the flow range of the medium with the adjustment temperature, and can also improve the ratio of the area where the communication passage 55 is provided when viewed in the direction perpendicular to the 1 st main surface 11 a. For example, the in-plane uniformity of the temperature of the object W can be improved while suppressing the pressure loss of the temperature-adjusting medium.
Further, the protruding portion 13 is provided on the 1 st main surface 11a side of the ceramic dielectric substrate 11 as needed. Grooves 14 are provided between the mutually adjacent projections 13. The grooves 14 are in communication with each other. A space is formed between the back surface of the object W to be processed mounted on the electrostatic chuck 100 and the groove 14.
The groove 14 is connected to an introduction path 53 penetrating the base plate 50 and the ceramic dielectric substrate 11. When a heat transfer gas such as helium (He) is introduced from the introduction path 53 in a state where the object W is adsorbed and held, the heat transfer gas flows in a space provided between the object W and the tank 14, and the object W can be directly heated or cooled by the heat transfer gas.
The base plate 50 is provided with a through hole 57 such as a lift pin hole or a sensor hole. A lift pin hole (a through hole 57 on the right side of the introduction path 53 in fig. 1) penetrates the base plate 50 and the ceramic dielectric substrate 11. A pin (not shown) for removing the processing object W placed on the 1 st main surface 11a from the electrostatic chuck 100 is inserted into the lift pin hole. A sensor hole (a through hole 57 on the left side of the introduction path 53 in fig. 1) penetrates the base plate 50. A sensor (not shown) for detecting the temperature of the ceramic dielectric substrate 11 is provided in the sensor hole. That is, the through holes 57 may pass through the base plate 50 and the ceramic dielectric substrate 11, and may pass through the base plate 50 without passing through the ceramic dielectric substrate 11. The through hole 57 is not limited to a lift pin hole, a sensor hole, or the like.
The connection portion 20 is provided on the 2 nd main surface 11b of the ceramic dielectric substrate 11 and the 2 nd dielectric layer 112. A contact electrode 61 is provided on an upper portion 50a of the base plate 50 corresponding to the position of the connection portion 20. Thus, when the electrostatic chuck 100 is mounted to the upper portion 50a of the base plate 50, the contact electrode 61 contacts the connection portion 20. Thereby, the contact electrode 61 and the electrode layer 12 are electrically connected via the connection portion 20.
The contact electrode 61 is, for example, a movable probe. Thereby, the contact electrode 61 can be surely brought into contact with the connection portion 20. In addition, damage to the connection portion 20 caused by contact of the contact electrode 61 with the connection portion 20 can be minimized. The contact electrode 61 is not limited to the above, and may be configured to contact the connection portion 20 alone or may be connected to the connection portion 20 by fitting or screwing.
Fig. 2 is a schematic plan view showing the vicinity of the through hole in the present embodiment.
Fig. 2 is a schematic plan view of the electrostatic chuck 100 when viewed in the direction of arrow a shown in fig. 1. In other words, fig. 2 is a schematic plan view of the electrostatic chuck 100 when viewed in a direction perpendicular to the 1 st main surface 11 a. In the schematic plan view shown in fig. 2, the heater 131 and the communication path 55 are shown by solid lines for convenience of explanation, not by broken lines.
As shown in fig. 2, at least a part of the heater 131 exists on the through hole 57 side when viewed from a portion (1 st portion) 55a of the communication path 55 closest to the through hole 57 when viewed in a direction perpendicular to the 1 st main surface 11 a. The "portion closest to the through hole 57" refers to, for example, a portion closest to the central axis 57a of the through hole 57 when viewed in a direction perpendicular to the 1 st main surface 11 a. In the communication path 55 shown in fig. 2, a portion closest to the through hole 57 is a portion 55a.
The distance D1 between the center axis 57a of the through hole 57 and the portion 55a of the communication path 55 closest to the through hole 57 is larger than the distance D2 between the center axis 57a of the through hole 57 and the portion (portion 2) 131a of the heater 131 closest to the through hole 57, as viewed in the direction perpendicular to the 1 st main surface 11 a.
The width D3 of the communication path 55 at the portion 55a of the communication path 55 closest to the through hole 57 is larger than the width D4 of the heater 131 at the portion 131a of the heater 131 closest to the through hole 57, as viewed in the direction perpendicular to the 1 st main surface 11 a. The width D3 is, for example, about 5 millimeters (mm) or more and 10mm or less. The width D4 is, for example, about 0.5mm or more and 3mm or less.
The diameter D7 (see fig. 3) of the through hole 57 is, for example, 0.05mm or more and 10mm or less when viewed in a direction perpendicular to the 1 st main surface 11 a.
When viewed in a direction perpendicular to the 1 st main surface 11a, a portion of the portion 131a including the heater 131 and a portion of the portion 55a including the communication path 55 preferably each have a shape surrounding the through hole 57. The shape surrounding the through hole 57 is a shape protruding outward when viewed from the through hole 57, and is preferably a substantially circular arc shape centered on the through hole 57.
As shown in fig. 2, a circle having a diameter similar to the diameter of the inner side (the through hole 57 side) of the heater 131 is defined as a2 nd virtual circle C2 when viewed in a direction perpendicular to the 1 st main surface 11 a. Or as shown in fig. 2, circles passing through any 2 parts (parts 131b and 131C in fig. 2) of the part 131a of the heater 131 closest to the through hole 57 and the through hole 57 side (inner side) of the heater 131 as viewed in the direction perpendicular to the 1 st main surface 11a are taken as 2 nd virtual circles C2. At this time, the length of the portion (the circular arc CA1 and the circular arc CA2 in fig. 2) where the 2 nd virtual circle C2 intersects the heater 131 is 50% to 80% with respect to the circumferential length of the 2 nd virtual circle C2.
The position of the communication path 55 and the position of the heater 131 are measured by, for example, X-ray CT (ComputedTomography). The position of the heater 131 can be measured by using an ultrasonic flaw detector, for example. By performing a failure inspection such as a cross-sectional view by using a microscope such as a scanning electron microscope (Scanning Electron Microscopy: SEM), the position of the communication path 55 and the position of the heater 131 can be observed.
According to the present embodiment, the area where the temperature adjustment cannot be controlled in the object surface can be limited by making the most difficult-to-heat area and the most difficult-to-cool area substantially the same. In the present embodiment, the portions most difficult to heat and the portions most difficult to cool are the portions near the through holes 57. This can improve uniformity of the temperature distribution in the object plane of the processing object in the other region than the through hole 57. Further, even in the vicinity of the through hole 57, the cooling spot region which is most difficult to heat is made substantially the same as the hot spot region which is most difficult to cool, so that the balance between heating and cooling can be easily maintained, and the uniformity of the temperature distribution in the object plane to be processed can be improved.
Fig. 3 is a schematic plan view showing the vicinity of the through hole in the present embodiment.
Fig. 4 is a schematic plan view showing a folded portion of the heater according to the present embodiment.
Fig. 3 is a schematic plan view of the electrostatic chuck 100 when viewed from the direction of arrow a shown in fig. 1. In other words, fig. 3 is a schematic plan view of the electrostatic chuck 100 when viewed in a direction perpendicular to the 1 st main surface 11 a. In the schematic plan view shown in fig. 3, the heater 131 and the communication path 55 are shown by solid lines for convenience of explanation, not by broken lines.
As shown in fig. 3, a circle having a radius similar to the inside (the through hole 57 side) of the communication path 55 is defined as a1 st virtual circle C1 when viewed in a direction perpendicular to the 1 st main surface 11 a. Alternatively, as shown in fig. 2, when viewed in a direction perpendicular to the 1 st main surface 11a, a circle passing through any 2 parts (parts 55b and 55C in fig. 3) on the side (inner side) of the through hole 57 in the part 55a of the communication path 55 closest to the through hole 57 and the through hole 57 is defined as a1 st virtual circle C1. At this time, a distance D5 between the center 55D of the 1 st virtual circle C1 and the center 131D of the 2 nd virtual circle C2 is within 0.2 mm. At this time, as shown in fig. 4, the dimension D6 of the portion (circular portion) outside (outer periphery) of the folded portion 131e of the heater 131 is, for example, about 0.6mm or more and 1mm or less (R0.6 or more and R1 or less).
More preferably, the distance between the center 55d of the 1 st virtual circle C1 and the center 131d of the 2 nd virtual circle C2 is 0mm. That is, it is more preferable that the center 55d of the 1 st virtual circle C1 overlaps the center 131d of the 2 nd virtual circle C2.
Fig. 5 is a schematic plan view showing the vicinity of another through hole according to the present embodiment.
Fig. 5 is a schematic plan view of the electrostatic chuck 100 as seen from the direction of arrow a shown in fig. 1, similarly to fig. 2 and 3.
The arrangement image of the heater 131 in the vicinity of the through hole 57 shown in fig. 5 is different from the arrangement image of the heater 131 in the vicinity of the through hole 57 shown in fig. 2 and 3. The upper heater 131 is connected near the through hole 57 shown in fig. 2 and 3. On the other hand, in the vicinity of the through hole 57 shown in fig. 5, the upper heater 131 is not continuous. Even in the case of any one of the examples shown in fig. 2,3, and 5, the arrangement image (patterm) of the heater 131 is left-right symmetric with respect to an arbitrary straight line 57b passing through the center axis 57a of the through hole 57 when viewed in the direction perpendicular to the 1 st main surface 11 a. When the through hole 57 is a lift pin hole, the arrangement image of the heater 131 is often laterally symmetrical with respect to an arbitrary straight line 57b passing through the center axis 57a of the through hole 57.
Even in the case of the arrangement image of the heaters 131 shown in fig. 5, at least a part of the heaters 131 exists on the through-hole 57 side when viewed from the portion 55a of the communication path 55 closest to the through-hole 57 when viewed in the vertical direction perpendicular to the 1 st main surface 11 a. The length of the portion (the arcs CA1, CA2, and CA3 in fig. 5) where the 2 nd virtual circle C2 intersects the heater 131 is 50% to 80% of the circumferential length of the 2 nd virtual circle C2. The distance D1, the distance D2, the width D3, the width D4, the distance D5, and the dimension D6 are as described above with respect to fig. 2 and 3.
Fig. 6 (a) and 6 (b) are schematic plan views showing the vicinity of other through holes according to the present embodiment. Fig. 6 (a) and 6 (b) are schematic plan views of the electrostatic chuck 100 as viewed in the direction of arrow a shown in fig. 1, as in fig. 2 and 3.
The curvature of the planar shape of the upper heater 131 in fig. 6 (a) is larger than that of the upper heater 131 in the vicinity of the through hole 57 shown in fig. 2 and 3. In fig. 6 (a), a part of the upper heater 131 overlaps a part of the communication path 55 in the Z direction in the vicinity of the through hole 57. In fig. 6 (b), the heater 131 is constituted by an image extending in a straight line along the X-Y plane. Even in the examples shown in fig. 6 (a) and 6 (b), the distances D1, D2, D3, D4, and D5 are as described above with respect to fig. 2 and 3. This can improve the uniformity of the temperature distribution in the object plane.
Fig. 7 (a) and 7 (b) are schematic plan views showing the vicinity of other through holes according to the present embodiment. Fig. 7 (a) and 7 (b) are schematic plan views of the electrostatic chuck 100 as viewed in the direction of arrow a shown in fig. 1, as in fig. 2 and 3.
In the example shown in fig. 7 (a) and 7 (b), the arrangement image of the communication path 55 is different from the example shown in fig. 2 and 3. In the example of fig. 7 (a) and 7 (b), the communication path 55 is branched into a main path 551 and a sub-path 552 in the vicinity of the through hole 57. As shown in fig. 7 (a), the width D8a of the sub-channel 552 is narrower than the width D3 of the main channel 551. As shown in fig. 7 (b), the width D8b of the sub-channel 552 is narrower than the width D3 of the main channel 551. The flow path width is a flow path length in a direction substantially perpendicular to the direction in which the cooling medium flows when viewed in a direction perpendicular to the 1 st main surface 11 a.
In the present specification, when the communication passage 55 is branched in this way, "the portion 55a of the communication passage 55 closest to the through hole 57" means "the portion of the main passage 551 closest to the through hole 57". In this case, even in the examples shown in fig. 7 (a) and 7 (b), the distances D1, D2, D3, D4, and D5 are as described above with respect to fig. 2 and 3.
Fig. 8 is a graph illustrating an example of the relationship between the circumferential length ratio and the temperature decrease rate.
The horizontal axis of the graph shown in fig. 8 represents the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 (the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect/the circumferential length (%) of the 2 nd virtual circle C2). The vertical axis of the graph shown in fig. 8 represents the temperature decrease rate (%) with respect to the average temperature.
As shown in fig. 8, when the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 becomes high, the temperature decrease rate with respect to the average temperature becomes low. The temperature decrease rate with respect to the average temperature is preferably 10% or less. When the temperature decrease rate is higher than 10% with respect to the average temperature, it is difficult to appropriately heat the region near the through hole 57.
That is, when the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 is less than about 50%, the heater 131 is insufficient in the vicinity of the through hole 57. Therefore, it is difficult to appropriately heat the region near the through hole 57. In other words, the region near the through hole 57 may become a cold spot.
On the other hand, when the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 is higher than 80%, the heater 131 is excessive in the vicinity of the through hole 57. Therefore, it may be difficult to ensure an insulation distance between the heaters 131.
Accordingly, the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 is preferably 50% to 80%.
Further, the ratio between the length of the portion where the 2 nd virtual circle C2 and the heater 131 intersect and the circumferential length of the 2 nd virtual circle C2 is preferably 70% to 80%. At this time, the insulation distance between the heaters 131 can be ensured, and a large number of heaters 131 can be provided near the through holes 57.
Fig. 9 is a graph illustrating an example of the relationship between the temperature deviation and the heater area ratio.
The horizontal axis of the graph shown in fig. 9 represents the heater area ratio (%). The heater area ratio is an area ratio of the heater 131 with respect to the area of the ceramic dielectric substrate 11 when viewed in a direction perpendicular to the 1 st main surface 11 a.
The left vertical axis of fig. 9 shows a temperature deviation Δt (°c) of the object W (e.g., wafer) to be processed placed on the electrostatic chuck and whose temperature is controlled. The temperature deviation Δt is a temperature difference between the highest temperature portion and the lowest temperature portion in the surface (in the X-Y plane) of the object W to be processed.
The right vertical axis of fig. 9 shows a ratio Rt (%) of the temperature deviation of the object W from the reference. For example, when the temperature of the object W is changed from the temperature T1 to the temperature T2 by the electrostatic chuck, it is expressed as a ratio Rt (%) = (temperature deviation Δt)/(temperature T2-temperature T1) ×100.
In fig. 9, in the electrostatic chuck described with respect to fig. 1, the heater area ratio can be changed by changing the width of the heater 131 or densely disposing the heater 131. As shown in fig. 9, when the heater area ratio is 20% or less, the temperature deviation Δt is 5 ℃ or more, and the ratio Rt is 10% or more. When the heater area ratio further decreases, the temperature deviation Δt and the ratio Rt sharply increase. This is considered to be because, when the heater 131 is disposed loosely, a region distant from the heater 131 is difficult to be heated.
On the other hand, even when the heater area ratio is 80% or more, the temperature deviation Δt is 5 ℃ or more, and the ratio Rt is 10% or more. When the heater area ratio further increases, the temperature deviation Δt and the ratio Rt sharply increase. This is considered to be because, for example, a region where the heater 131 is densely arranged is easily heated, whereas a region where the heater 131 is not arranged is kept in a state where it is difficult to be heated. Thus, the temperature difference becomes remarkable.
The heater area ratio is also limited by factors other than the temperature deviation. For example, in order to secure an insulation distance, the closest distance between the heaters 131 is preferably 0.2mm or more and 5mm or less, and the distance from the heater 131 to the outer periphery of the ceramic dielectric substrate 11 is preferably 0.05mm or more and 7mm or less. Therefore, the heater area ratio is less than 100%. For example, when the heater area ratio is 90% or more, the insulation pressure resistance between the heater-heater becomes insufficient, and when the heater area ratio is 85% or more, the insulation pressure resistance between the heater-outer periphery becomes insufficient.
In the above embodiments, the heater area ratio is preferably 20% or more and 80% or less. This can improve the uniformity of the temperature distribution in the object plane. More preferably, the heater area ratio is 40% or more and 60% or less. Thus, the temperature deviation Δt can be set to 2 ℃ or less, and the ratio Rt can be set to 4% or less.
Fig. 10 is a graph illustrating an example of the relationship between the temperature deviation and the communication road area ratio. The horizontal axis of fig. 10 represents the communication path area ratio (%). The communication channel area ratio is an area ratio of the communication channel 55 with respect to the area of the ceramic dielectric substrate 11 when viewed in a direction perpendicular to the 1 st main surface 11 a.
Like the left vertical axis of fig. 9, the left vertical axis of fig. 10 shows a temperature deviation Δt (°c). Like the right vertical axis of fig. 9, the right vertical axis of fig. 10 shows a ratio Rt (%) of temperature deviation from the reference.
In fig. 10, in the electrostatic chuck described with respect to fig. 1, the area ratio of the additional communication path can be changed by changing the width of the communication path 55 or densely disposing the communication path 55. In this example, the cooling medium is passed through the communication passage 55.
As shown in fig. 10, when the communication passage area ratio is 20% or less, the temperature deviation Δt is 5 ℃ or more, and the ratio Rt is 10% or more. When the communication passage area ratio further decreases, the temperature deviation Δt and the ratio Rt sharply increase. This is considered to be because, for example, when the communication path 55 is arranged in a loose manner, a region away from the communication path 55 is likely to become a hot spot.
On the other hand, even when the area ratio of the communication road is 80% or more, the temperature deviation Δt is 5 ℃ or more, and the ratio Rt is 10% or more. When the communication passage area ratio further increases, the temperature deviation Δt and the ratio Rt sharply increase. This is considered to be because, for example, a region in which the communication path 55 is densely arranged is easily cooled, while a region in which the communication path 55 is not arranged is kept in a state in which it is difficult to be cooled.
Thus, the temperature difference becomes remarkable.
The area ratio of the communication path is also limited by factors other than the temperature deviation. For example, in order to secure strength, the closest distance between the communication passages 55 is preferably 0.3mm or more and 15mm or less, and the distance from the communication passage 55 to the outer periphery of the base plate 50 (the outer periphery of the upper portion 50 a) is preferably 0.3mm or more and 10mm or less. Therefore, the area ratio of the communication road is less than 100%.
In the above embodiments, the communication passage area ratio is preferably 20% to 80%. This can improve the uniformity of the temperature distribution in the object plane. More preferably, the communication passage area ratio is 40% or more and 60% or less. Thus, the temperature deviation Δt can be set to 2 ℃ or less, and the ratio Rt can be set to 4% or less.
Fig. 11 is a graph illustrating an example of a relationship between temperature deviation and heater area ratio with respect to communication passage area.
The horizontal axis of fig. 11 shows the ratio of the heater area to the communication passage area. The ratio is calculated by (heater area)/(communication area) (%) and the ratio is calculated by the ratio. The heater area is an area of the heater 131 when viewed in a direction perpendicular to the 1 st main surface 11 a. The communication passage area is an area of the communication passage 55 when viewed in a direction perpendicular to the 1 st main surface 11 a.
Like the left vertical axis of fig. 9, the left vertical axis of fig. 11 shows a temperature deviation Δt (°c). Like the right vertical axis of fig. 9, the right vertical axis of fig. 11 shows a ratio Rt (%) of temperature deviation from the reference.
In fig. 11, in the electrostatic chuck described with reference to fig. 1, the area ratio of the heater 131 to the communication path area can be changed by changing the width of the heater 131 and the width of the communication path 55 or densely arranging the heater 131 and the communication path 55. Here, the minimum value of the width of the heater 131 is 0.5mm, and the minimum value of the width of the communication path 55 is 1mm. In this example, the cooling medium is passed through the communication passage 55. The temperature of the object W is controlled as follows, and the cooling medium is caused to flow through the communication path 55 and heated by the heater 131.
As shown in fig. 11, when the ratio of the heater area to the communication passage area is 60% or less, the temperature deviation Δt is 5 ℃ or more and the ratio Rt is 10% or more. When the ratio of the heater area to the communication passage area is further reduced, the temperature deviation Δt and the ratio Rt are drastically increased. This is considered to be because the density of the communication path 55 with respect to the heater 131 is high, and cold spots are likely to occur.
On the other hand, even when the ratio of the heater area to the communication passage area is 180% or more, the temperature deviation Δt is 5 ℃ or more, and the ratio Rt is 10% or more. When the ratio of the heater area to the communication passage area further increases, the temperature deviation Δt and the ratio Rt sharply increase. This is considered to be because the heater 131 of the communication path 55 has a high density, and hot spots are likely to occur.
As described above, in the embodiment, it is preferable that the heater 131 and the communication path 55 are arranged in a moderately dense manner. The ratio of the heater area to the communication passage area is preferably 60% or more and 180% or less. This can improve the uniformity of the temperature distribution in the object plane. More preferably, the ratio of the heater area to the communication passage area is 100% or more and 140% or less. Thus, the temperature deviation Δt can be set to 2 ℃ or less, and the ratio Rt can be set to 4% or less.
The ratio of the heater area ratio to fig. 9, the communication path area ratio to fig. 10, and the heater area ratio to the communication path area of fig. 11 may be calculated with respect to the entire suction surface of the electrostatic chuck 100, with respect to a range surrounded by the outer periphery of the electrostatic chuck 100, or within a range of about 50mm×50mm in the electrostatic chuck 100. The heater area ratio, the communication passage area ratio, and the ratio of the heater area to the communication passage area may be average values calculated from a plurality of (about 3) 50mm×50mm ranges.
Fig. 12 is a schematic plan view showing a heater turn-back portion.
Fig. 13 is a schematic enlarged view of an enlarged heater turn-back portion.
Fig. 12 (a) is a schematic plan view showing a heater turn-back portion according to the present embodiment. Fig. 12 (b) is a schematic plan view showing a heater turn-back portion of the comparative example. Fig. 13 (a) is a schematic enlarged view of the region AR1 shown in fig. 12 (a). Fig. 13 (b) is a schematic enlarged view of the region AR2 shown in fig. 12 (b).
Fig. 12 (a) shows a state where the folded portions 131e of the plurality of heaters 131 are close to each other. The turn-back portion 131e of the heater 131 is a portion bent from the 1 st direction toward the 2 nd direction different from the 1 st direction. Fig. 12 (b) shows a state in which the folded portions 134e of the plurality of heaters 134 are close to each other. The turn-back portion 134e of the heater 134 is a portion curved from the 3 rd direction toward the 4 th direction different from the 3 rd direction. In the arrangement image of the heater 131 shown in fig. 12 (a), the 1 st heater 135 approaches the 2 nd heater 136. In the configuration image of the heater 134 shown in fig. 12 (b), the 1 st heater 137 approaches the 2 nd heater 138.
When the area of the space 141 between the turning portion 131e (1 st turning portion) of the 1 st heater 135 and the turning portion 131e (2 nd turning portion) of the 2 nd heater 136 is large, the temperature controllability of the processing object W may be lowered, and it may be difficult to improve the uniformity of the temperature distribution in the plane of the processing object W. In contrast, when the area of the space 141 between the folded portion 131e of the 1 st heater 135 and the folded portion 131e of the 2 nd heater 136 is appropriate, the temperature controllability of the processing object W can be improved, and the uniformity of the temperature distribution in the surface of the processing object W can be improved.
Here, as shown in fig. 13 (a), in the present embodiment, the closest distance between the 1 st heater 135 and the 2 nd heater 136 is denoted as "D11". The distance between the circular end 131f of the turn-back portion 131e of the 1 st heater 135 and the circular end 131f of the turn-back portion 131e of the 2 nd heater 136 is denoted as "D12".
In the present specification, the "circular end portion" refers to an intersection point of a circular portion and a straight portion.
As shown in fig. 13 (b), in the comparative example, the closest distance between the 1 st heater 137 and the 2 nd heater 138 is denoted as "D13". The distance between the circular end 134f of the turn-back portion 134e of the 1 st heater 137 and the circular end 134f of the turn-back portion 134e of the 2 nd heater 138 is denoted as "D14".
In this case, in the present embodiment, the ratio (D11/D12) of the closest distance D11 to the distance D12 between the circular end portions 131f is 50% or more and less than 100%. In other words, the closest distance D11 is 50% or more and less than 100% with respect to the distance D12 between the circular end portions 131 f.
In contrast, in the comparative example, the ratio (D13/D14) of the closest distance D13 to the distance D14 between the circular end portions 134f is less than 50%. In other words, the closest distance D13 is less than 50% relative to the distance D14 between the rounded ends 134 f.
According to the present embodiment, by defining the approaching distance between the plurality of heaters 131 in order to define the density of the space portion 141 at the portion where the folded portions 131e of the plurality of heaters 131 approach, the temperature controllability of the processing object W can be improved, and the uniformity of the temperature distribution in the surface of the processing object W can be improved.
The closest distance ratio with respect to the distance between the circular ends to each other will be further described with reference to the accompanying drawings.
Fig. 14 is a graph illustrating an example of a relationship between a closest distance ratio to a distance between circular end portions and a temperature difference in an object plane of a treatment object.
Fig. 15 is a table illustrating an example of a relationship between a closest distance ratio to a distance between circular end portions and a temperature difference in an object plane of a processing object.
Fig. 16 is a schematic diagram illustrating an example of the temperature distribution in the object plane of the process.
The present inventors studied the relationship between the closest distance ratio (closest distance/distance between circular ends) with respect to the distance between circular ends and the temperature difference in the object plane of the treatment object. As shown in the table of fig. 15, the present inventors studied the temperature difference in the surface of the object W to be processed when the closest distance ratio to the distance between the circular end portions was 22% (case 1), 26% (case 2), 33% (case 3), 50% (case 4), 67% (case 5), and 80% (case 6).
An example of the results of the study is shown in fig. 14 to 16 (e). That is, as shown in fig. 14 and 15, when the closest distance ratio to the distance between the circular end portions becomes high, the temperature difference in the surface of the processing object W decreases. When the temperature difference in the surface of the object to be processed W is 1 ℃ or lower, the closest distance ratio to the distance between the circular end portions needs to be 50% or more and less than 100%. As shown in fig. 16 (c) to 16 (e), when the closest distance ratio of the distances between the circular end portions is 50% or more and less than 100%, the temperature decrease in the space 141 between the folded portion 131e of the 1 st heater 135 and the folded portion 131e of the 2 nd heater 136 is suppressed.
Fig. 17 (a) and 17 (b) are schematic views illustrating another electrostatic chuck according to the present embodiment.
Fig. 17 (a) is a schematic cross-sectional view of an electrostatic chuck 101 according to an embodiment. Fig. 17 (a) is a schematic cross-sectional view of a part of the cross-section shown in fig. 1.
The electrostatic chuck 101 illustrated in fig. 17 (a) has a bypass electrode 139. Otherwise, the same description as for the electrostatic chuck 100 described with reference to fig. 1 can be applied to the electrostatic chuck 101. Although the example shown in fig. 17 (a) is a heater plate structure, the heater and the bypass electrode may be incorporated in the ceramic, and the structure and the manufacturing method are not limited.
The bypass electrode 139 is provided between the base plate 50 and the electrode layer 12 in the Z direction. In this example, the bypass electrode 139 is located between the base plate 50 and the heater 131 in the Z-direction. The position of the bypass electrode 139 is not limited thereto. For example, the bypass electrode 139 may also be located between the electrode layer 12 and the heater 131 in the Z-direction.
Examples of the material of the bypass electrode 139 include metals including at least one of stainless steel, titanium, chromium, nickel, copper, and aluminum. The bypass electrode 139 is electrically connected to the heater 131. In addition, the bypass electrode 139 is electrically connected to the terminal 62. The heater current 133 (see fig. 1) can be caused to flow through the heater 131 via the terminal 62 and the bypass electrode 139. By providing such bypass electrode 139, the degree of freedom in arrangement of the terminal 62 and the heater 131 can be further improved. In addition, since the heater 131 does not directly contact the terminal 62, damage to the heater 131 can be suppressed.
Fig. 17 (b) is a schematic plan view illustrating the bypass electrode of the present embodiment.
As shown in fig. 17 (b), a plurality of bypass electrodes 139 are provided in the electrostatic chuck 101. When viewed in a direction perpendicular to the 1 st main surface 11a, the 1 st main surface 11a is preferably substantially circular, and the plurality of bypass electrodes 139 preferably overlap substantially the entire 1 st main surface 11 a. In this example, 8 bypass electrodes 139 are provided. The respective planar shapes of the bypass electrodes 139 are, for example, substantially sector-shaped. The fan shape is surrounded by an arc along the outer periphery of the 1 st main surface 11a and 2 radii of the arc. However, the bypass electrode may be substantially comb-shaped or substantially circular, and the shape of the bypass electrode is not limited thereto.
In addition, a gap G1 is provided in the electrostatic chuck 101. The gap G1 is a region between 2 bypass electrodes 139 (for example, the 1 st bypass electrode 139a and the 2 nd bypass electrode 139 b) adjacent to each other. By providing the plurality of bypass electrodes 139 like the divided circles in this way, for example, the in-plane uniformity of the current supplied to the heater 131 can be improved.
Fig. 18 is a graph illustrating an example of the relationship between the temperature deviation and the gap width of the bypass electrode.
The horizontal axis of fig. 18 represents the gap width D15 of the bypass electrode 139. The gap width D15 is the width of the gap G1 shown in fig. 17 (b). In other words, the gap width D15 is a distance between 2 bypass electrodes 139 adjacent to each other in the circumferential direction of the electrostatic chuck 101. Like the left vertical axis of fig. 9, the left vertical axis of fig. 18 shows a temperature deviation Δt (°c). Like the right vertical axis of fig. 9, the right vertical axis of fig. 18 shows a ratio Rt (%) of temperature deviation from the reference.
Fig. 18 illustrates characteristics when a plurality of gap widths D15 are changed in the electrostatic chuck 101. As shown in fig. 18, when the gap width D15 is 10mm or less, the temperature deviation Δt is 5 ℃ or less, and the ratio Rt is 10% or less. This is considered because the gap G1 easily functions as a heat insulating layer. In addition, when the gap width D15 is smaller than 0.05mm, the withstand voltage between the bypass electrodes 139 may be lowered. In the embodiment, the gap width D15 is preferably 0.05mm or more and 10mm or less. This can improve the uniformity of the temperature distribution in the object plane. More preferably, the gap width D15 is not less than 0.05mm and not more than 7.5mm, still more preferably not less than 0.05mm and not more than 2.0 mm.
Fig. 19 is a graph illustrating an example of a relationship between temperature deviation and gap depth of the bypass electrode.
The horizontal axis of fig. 19 represents the gap depth D16 of the bypass electrode 139. The gap depth D16 is the depth of the gap G1 shown in fig. 17 (a) (the length of the 1 st main surface 11a in the vertical direction). In other words, the gap depth D16 corresponds to the thickness of the bypass electrode 139. Like the left vertical axis of fig. 9, the left vertical axis of fig. 19 shows a temperature deviation Δt (°c). Like the right vertical axis of fig. 9, the right vertical axis of fig. 19 shows a ratio Rt (%) of temperature deviation from the reference.
Fig. 19 illustrates characteristics when the gap depth D16 is changed in the electrostatic chuck 101. As shown in fig. 19, when the gap depth D16 is 1mm or less, the temperature deviation Δt is 5 ℃ or less, and the ratio Rt is 10% or less. In the embodiment, the gap depth D16 is preferably 0.01mm or more and 1mm or less. This can improve the uniformity of the temperature distribution in the object plane. More preferably, the gap depth D16 is not less than 0.01mm and not more than 0.8mm, still more preferably not less than 0.01mm and not more than 0.4 mm.
Fig. 20 is a schematic cross-sectional view illustrating a wafer processing apparatus according to another embodiment of the present invention.
The wafer processing apparatus 500 according to the present embodiment includes: a processing vessel 501; an upper electrode 510; and the electrostatic chucks (e.g., electrostatic chuck 100) described above with respect to fig. 1-19. A process gas inlet 502 for introducing a process gas into the process container 501 is provided in the top surface thereof. An exhaust port 503 for depressurizing and exhausting the interior is provided in the bottom plate of the processing container 501. The high-frequency power supply 504 is connected to the upper electrode 510 and the electrostatic chuck 100, and the upper electrode 510 and the pair of electrodes of the electrostatic chuck 10 are opposed to each other in parallel with a predetermined interval therebetween.
In the wafer processing apparatus 500 according to the present embodiment, when a high-frequency voltage is applied between the upper electrode 510 and the electrostatic chuck 10, a high-frequency discharge is generated, and the process gas introduced into the process container 501 is excited and activated by the plasma, so that the object W to be processed is processed. The object W to be processed may be a semiconductor substrate (wafer). However, the object to be processed W is not limited to a semiconductor substrate (wafer), and may be, for example, a glass substrate used in a liquid crystal display device.
The high frequency power supply 504 is electrically connected to the base plate 50 of the electrostatic chuck 100. As described above, a metal material such as aluminum is used for the base plate 50. That is, the base plate 50 has conductivity. Thereby, a high-frequency voltage is applied between the upper electrode 510 and the base plate 50.
Although an apparatus having such a structure as the wafer processing apparatus 500 is generally referred to as a parallel plate type RIE (Reactive Ion Etching) apparatus, the electrostatic chuck 100 according to the present embodiment is not limited to being applied to the apparatus. For example, the present invention is widely applicable to so-called vacuum processing apparatuses such as ECR (Electron Cyclotron Resonance) etching apparatuses, inductively coupled plasma processing apparatuses, helicon wave plasma processing apparatuses, plasma separation type plasma processing apparatuses, surface wave plasma processing apparatuses, and plasma CVD (Chemical Vapor Deposition) apparatuses. The electrostatic chuck 100 according to the present embodiment can be widely applied to a substrate processing apparatus that performs processing and inspection under atmospheric pressure, such as an exposure apparatus and an inspection apparatus. However, if the electrostatic chuck 100 according to the present embodiment has a high plasma resistance, the electrostatic chuck 100 is preferably applied to a plasma processing apparatus. In the structure of the above-described device, a well-known structure can be applied to a portion other than the electrostatic chuck 100 according to the present embodiment, and therefore, the description thereof will be omitted.
The embodiments of the present invention have been described above. However, the present invention is not limited to the above description. As for the foregoing embodiments, the invention in which appropriate design changes are added by those skilled in the art is also included in the scope of the present invention as long as the features of the present invention are provided. For example, the shape, size, material, arrangement, and the like of the elements included in the electrostatic chuck 100, the electrostatic chuck substrate 110, the base plate 50, and the like, and the arrangement of the heater 131 and the through holes 57, and the like are not limited to those illustrated, and may be changed as appropriate.
The elements of the embodiments described above can be combined within a technically feasible range, and the combination of these inventions is also included in the scope of the present invention as long as the features of the present invention are included.
According to one aspect of the present invention, there is provided an electrostatic chuck and a wafer processing apparatus capable of improving uniformity of temperature distribution in an object plane of a process.

Claims (13)

1. An electrostatic chuck is provided with:
a ceramic dielectric substrate which is a polycrystalline ceramic sintered body and has a2 nd main surface on which a1 st main surface of a treatment object is placed and which is opposite to the 1 st main surface;
An electrode layer provided on the ceramic dielectric substrate;
a base plate provided on the 2 nd main surface side and supporting the ceramic dielectric substrate;
And a heater arranged between the electrode layer and the base plate, characterized in that,
The base plate has: a through hole penetrating through the base plate; and a communication path for passing a medium for adjusting the temperature of the object to be processed,
At least a part of the heater is present on the through hole side when viewed from the 1 st part of the communication path closest to the through hole when viewed in a direction perpendicular to the 1 st main surface,
The portion of the heater and the portion of the communication path including the 1 st portion each have a shape surrounding the through hole when viewed in a direction perpendicular to the 1 st main surface.
2. An electrostatic chuck according to claim 1, wherein the distance between the 1 st portion and the central axis of the through hole is greater than the distance between the 2 nd portion of the heater closest to the through hole and the central axis of the through hole, as viewed in a direction perpendicular to the 1 st main face.
3. The electrostatic chuck according to claim 2, wherein a distance between a center of a 1 st imaginary circle passing through any 2 parts of the 1 st part and the through hole side in the communication path and a center of a2 nd imaginary circle passing through any 2 parts of the 2 nd part and the through hole side in the heater is 0.2 mm or less when viewed in a direction perpendicular to the 1 st main surface.
4. The electrostatic chuck according to claim 2, wherein a center of a 1 st imaginary circle passing through any 2 parts on the through hole side in the 1 st part and the communication path overlaps a center of a2 nd imaginary circle passing through any 2 parts on the through hole side in the 2 nd part and the heater, as viewed in a direction perpendicular to the 1 st main surface.
5. An electrostatic chuck according to claim 2, wherein the width of the communication path in the 1 st section is wider than the width of the heater in the 2 nd section as viewed in a direction perpendicular to the 1 st main face.
6. An electrostatic chuck according to claim 3, wherein a length of a portion where the 2 nd virtual circle intersects the heater is 50% or more and 80% or less with respect to a circumferential length of the 2 nd virtual circle when viewed in a direction perpendicular to the 1 st main surface.
7. The electrostatic chuck according to claim 1, wherein,
The heater has: a1 st heater having a1 st turn-back portion bent from a1 st direction toward a2 nd direction different from the 1 st direction;
And a 2 nd heater provided close to the 1 st heater and having a 2 nd folded portion curved from a3 rd direction toward a 4 rd direction different from the 3 rd direction,
The closest distance between the 1 st turn-back portion and the 2 nd turn-back portion is 50% or more and less than 100% with respect to the distance between the circular end of the 1 st turn-back portion and the circular end of the 2 nd turn-back portion.
8. The electrostatic chuck according to claim 1, wherein an area ratio of the heater with respect to an area of the ceramic dielectric substrate is 20% or more and 80% or less when viewed in a direction perpendicular to the 1 st main surface.
9. The electrostatic chuck according to claim 1, wherein the area ratio of the communication path is 20% or more and 80% or less with respect to the area of the ceramic dielectric substrate when viewed in a direction perpendicular to the 1 st main surface.
10. The electrostatic chuck according to claim 1, wherein an area ratio of the heater with respect to an area of the communication path is 60% or more and 180% or less when viewed in a direction perpendicular to the 1 st main surface.
11. The electrostatic chuck according to claim 1, wherein,
And a plurality of bypass electrodes provided between the electrode layer and the base plate and electrically connected to the heater,
The distance between adjacent bypass electrodes in the plurality of bypass electrodes is 0.05 mm or more and 10 mm or less.
12. The electrostatic chuck according to claim 1, wherein,
And a plurality of bypass electrodes provided between the electrode layer and the base plate and electrically connected to the heater,
The length of the region between the mutually adjacent bypass electrodes in the plurality of bypass electrodes in the direction perpendicular to the 1 st main surface is 0.01 mm or more and 1 mm or less.
13. A wafer processing apparatus comprising the electrostatic chuck according to claim 1.
CN202010630896.7A 2014-12-10 2015-12-10 Electrostatic chuck and wafer processing apparatus Active CN111883473B (en)

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JP2014249729 2014-12-10
JP2015-238822 2015-12-07
JP2015238822A JP5987966B2 (en) 2014-12-10 2015-12-07 Electrostatic chuck and wafer processing equipment
CN201580066345.XA CN107004629B (en) 2014-12-10 2015-12-10 Electrostatic chuck and wafer processing apparatus
PCT/JP2015/084611 WO2016093297A1 (en) 2014-12-10 2015-12-10 Electrostatic chuck and wafer processing device
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JP2006310832A (en) * 2005-03-31 2006-11-09 Ngk Spark Plug Co Ltd Electrostatic chuck

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JP3970714B2 (en) * 2002-08-01 2007-09-05 日本特殊陶業株式会社 Combined heater
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