CN111863599A - Si substrate-based N-polar face Al-rich component nitride material growth method - Google Patents
Si substrate-based N-polar face Al-rich component nitride material growth method Download PDFInfo
- Publication number
- CN111863599A CN111863599A CN202010763410.7A CN202010763410A CN111863599A CN 111863599 A CN111863599 A CN 111863599A CN 202010763410 A CN202010763410 A CN 202010763410A CN 111863599 A CN111863599 A CN 111863599A
- Authority
- CN
- China
- Prior art keywords
- film
- substrate
- rich
- component
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 239000000463 material Substances 0.000 title claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 66
- 239000010409 thin film Substances 0.000 claims description 19
- 230000006911 nucleation Effects 0.000 claims description 10
- 238000010899 nucleation Methods 0.000 claims description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a growth method of an N-polar face Al-rich component nitride material based on a Si substrate, which specifically comprises the following steps: s1: providing Si on the surface of Si substrate3N4Film of the Si3N4The crystal orientation of the film is in the (001) direction; s2: in the presence of Si3N4An AlN nucleating layer and an AlN buffer layer are deposited and grown on the surface of the film in sequence; s3: epitaxially growing a GaN film on the AlN buffer layer; s4: epitaxially growing a nitride film rich in Al component on the surface of the GaN film; in the technical scheme, the nitride material rich in the Al component can be well prepared by adopting the growth method, and the growth method is simple in process, strong in operability and beneficial to promoting the application of the nitride-based ultraviolet LED.
Description
Technical Field
The invention relates to a material growth method, in particular to a growth method of an N-polar face Al-rich component nitride material based on a Si substrate.
Background
In recent years, with the progress of research on high Ga-component group iii nitrides and the increasing maturity of growth techniques, the center of research has gradually shifted to high Al-component group iii nitrides having wider band gaps. The material has a band gap as wide as 6.2 eV at normal temperature, can cover a deep ultraviolet wavelength range as short as 210nm, and has the unique advantages of high temperature resistance, radiation resistance, easy wavelength regulation and control and the like, thereby being an ideal material for preparing an ultraviolet light-emitting device. However, at present, no better process method for preparing the nitride material rich in the Al component exists, and the preparation of the high-efficiency ultraviolet light-emitting device is limited to a certain extent.
Therefore, the prior art still needs to be improved and developed.
Disclosure of Invention
The invention aims to provide a growth method of an N-polar face Al-rich component nitride material based on a Si substrate, which aims to overcome the defects in the prior art.
The technical scheme of the invention is as follows: a growth method of an N-polar face Al-rich component nitride material based on a Si substrate specifically comprises the following steps:
s1: providing Si on the surface of Si substrate3N4Film of the Si3N4The crystal orientation of the film is in the (001) direction;
s2: in the presence of Si3N4An AlN nucleating layer and an AlN buffer layer are deposited and grown on the surface of the film in sequence;
s3: epitaxially growing a GaN film on the AlN buffer layer;
s4: and epitaxially growing a nitride film rich in Al component on the surface of the GaN film.
The growing method of the N polar face Al-rich component nitride material based on the Si substrate is characterized in that the Si substrate is prepared by adopting a silicon-based silicon nitride growing method3N4The thickness of the film is between 1nm and 200 nm; wherein, said Si3N4The film is a continuous two-dimensional thin film over the surface of the Si substrate, or the Si3N4The film is a discontinuous two-dimensional thin film arranged in a regular shape, or the Si3N4The film being a continuous three-dimensional structured thin film, or said Si3N4The membrane is a thin film of a discontinuous three-dimensional structure.
The growing method of the N polar face Al-rich component nitride material based on the Si substrate is characterized in that the Si substrate is prepared by adopting a silicon-based silicon nitride growing method3N4The growth method of the film comprises the following steps: carrying out chemical reaction on nitrogen atoms in nitrogen or cracked ammonia and Si atoms on the surface of the Si substrate to form Si3N4A film; said Si3N4The film growth equipment includes MBE, MOCVD, HVPE or CVD.
The growing method of the N polar face Al-rich component nitride material based on the Si substrate is characterized in that the Si substrate is prepared by adopting a silicon-based silicon nitride growing method3N4The film growth method is to use Si3N4Sputtering the target material on the surface of the Si substrate; wherein the surface crystal orientation of the Si substrate is the (111) direction.
The growing method of the N polar face Al-rich component nitride material based on the Si substrate is characterized in that the AlN nucleating layer is positioned on the Si substrate3N4A membrane surface; the thickness of the AlN nucleating layer is between 3nm and 300 nm; the surface crystal orientation of the AlN nucleation layer is (000-1).
The growth method of the N polar face Al-rich nitride material based on the Si substrate is characterized in that the growth equipment of the AlN nucleating layer comprises MCVD, MBE, HVPE or CVD.
The growth method of the N-polar face Al-rich component nitride material based on the Si substrate comprises sputtering or sol-gel synthesis.
The growth method of the N polar face Al-rich nitride material based on the Si substrate comprises the following steps that the Al-rich nitride film comprises InGaN and Al components, wherein the mass percentage of the Al components in the whole Al-rich nitride film is more than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm.
The growing method of the N polar face Al-rich nitride material based on the Si substrate is characterized in that the Al-rich nitride film comprises AlGaN, and the crystal orientation of the Al-rich nitride film is (000-1).
The growth method of the N polar face Al-rich nitride material based on the Si substrate is characterized in that the Al-rich nitride film comprises InAlGaN and Al components, wherein the mass percentage of the Al components in the whole Al-rich nitride film is more than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm; the crystal orientation of the Al-rich nitride thin film is (000-1).
The invention has the beneficial effects that: the growth method of the N-polar face Al-rich component nitride material based on the Si substrate can be used for well preparing the Al-rich component nitride material, is simple in process and strong in operability, and is beneficial to promoting the application of the nitride-based ultraviolet LED.
Drawings
Fig. 1 is a flow chart of the steps of the growth method of the N-polar face Al-rich component nitride material based on a Si substrate in the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 1, a method for growing an N-polar face Al-rich component nitride material based on a Si substrate specifically includes the following steps:
s1: providing Si on the surface of Si substrate3N4(silicon nitride) film of Si3N4The crystal orientation of the film is in the (001) direction;
s2: in the presence of Si3N4An AlN (aluminum nitride) nucleating layer and an AlN buffer layer (an aluminum nitride buffer layer) are deposited and grown on the surface of the film in sequence;
s3: epitaxially growing a GaN (gallium nitride) film on the AlN buffer layer;
s4: and epitaxially growing a nitride film rich in Al component on the surface of the GaN film.
In the technical scheme, the nitride material rich in the Al component can be well prepared by adopting the growth method, and the growth method is simple in process, strong in operability and beneficial to promoting the application of the nitride-based ultraviolet LED.
In certain embodiments, the Si substrate selects a (111) crystal plane as its growth surface, and the Si substrate has a thickness between 100 and 2000 microns.
In certain embodiments, the Si is3N4The thickness of the film is between 1nm and 200 nm; wherein, said Si3N4The film is a continuous two-dimensional thin film over the surface of the Si substrate, or the Si3N4The film is a discontinuous two-dimensional thin film arranged in a regular shape, or the Si3N4The film being a continuous three-dimensional structured thin film, or said Si3N4The membrane is a thin film of a discontinuous three-dimensional structure.
In certain embodiments, the Si is3N4The film is a polycrystalline or amorphous material.
In certain embodiments, the Si is3N4The growth method of the film comprises the following steps: by using N2The nitrogen atoms in (nitrogen gas) or cracked ammonia gas and the Si atoms on the surface of the Si substrate are subjected to chemical reactionShould form Si3N4A film; said Si3N4The film growth apparatus includes MBE (molecular beam Epitaxy apparatus), MOCVD (metal organic chemical Vapor deposition apparatus), HVPE (Hydride Vapor Phase Epitaxy apparatus), or CVD (chemical Vapor deposition apparatus).
In certain embodiments, the Si is3N4The film growth method is to use Si3N4Sputtering the target material on the surface of the Si substrate; wherein the surface crystal orientation of the Si substrate is the (111) direction.
In certain embodiments, Si may be present, depending on production requirements3N4The surface of the film may or may not be provided with a dielectric mask.
In certain embodiments, the AlN nucleation layer is located at the Si3N4A membrane surface; the thickness of the AlN nucleating layer is between 3nm and 300 nm; the surface crystal orientation of the AlN nucleation layer is (000-1).
In certain embodiments, the AlN nucleation layer may form a continuous closed film or may form an open film, as desired for production.
In certain embodiments, the apparatus for growing the AlN nucleation layer includes: MCVD (Modified chemical vapor Deposition), MBE, HVPE or CVD.
In certain embodiments, the methods of growing the AlN nucleation layer include sputtering or sol-gel synthesis.
In certain embodiments, the Al-rich nitride film comprises InGaN (indium gallium nitride) and an Al component, wherein the mass percentage of the Al component to the mass of the entire Al-rich nitride film is greater than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm.
In certain embodiments, the Al-rich nitride film includes AlGaN (aluminum gallium nitride), and the Al-rich nitride film has a crystal orientation of (000-1).
In some specific embodiments, the Al-rich nitride film includes InAlGaN (indium aluminum gallium nitride) and an Al component, wherein the mass percentage of the Al component to the mass of the entire Al-rich nitride film is greater than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm; the crystal orientation of the Al-rich nitride thin film is (000-1).
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A growth method of an N-polar face Al-rich component nitride material based on a Si substrate is characterized by specifically comprising the following steps of:
s1: providing Si on the surface of Si substrate3N4Film of the Si3N4The crystal orientation of the film is in the (001) direction;
s2: in the presence of Si3N4An AlN nucleating layer and an AlN buffer layer are deposited and grown on the surface of the film in sequence;
s3: epitaxially growing a GaN film on the AlN buffer layer;
s4: and epitaxially growing a nitride film rich in Al component on the surface of the GaN film.
2. According to claimThe method for growing an N-polar-plane Al-rich component nitride material based on a Si substrate according to claim 1, wherein the Si substrate is Si3N4The thickness of the film is between 1nm and 200 nm; wherein, said Si3N4The film is a continuous two-dimensional thin film over the surface of the Si substrate, or the Si3N4The film is a discontinuous two-dimensional thin film arranged in a regular shape, or the Si3N4The film being a continuous three-dimensional structured thin film, or said Si3N4The membrane is a thin film of a discontinuous three-dimensional structure.
3. The Si substrate-based N-polar plane Al-rich component nitride material growth method according to claim 1, wherein the Si is Si3N4The growth method of the film comprises the following steps: carrying out chemical reaction on nitrogen atoms in nitrogen or cracked ammonia and Si atoms on the surface of the Si substrate to form Si3N4A film; said Si3N4The film growth equipment includes MBE, MOCVD, HVPE or CVD.
4. The Si substrate-based N-polar plane Al-rich component nitride material growth method according to claim 1, wherein the Si is Si3N4The film growth method is to use Si3N4Sputtering the target material on the surface of the Si substrate; wherein the surface crystal orientation of the Si substrate is the (111) direction.
5. The Si substrate-based N-polar plane Al-rich component nitride material growth method of claim 1, wherein the AlN nucleation layer is located at the Si substrate3N4A membrane surface; the thickness of the AlN nucleating layer is between 3nm and 300 nm; the surface crystal orientation of the AlN nucleation layer is (000-1).
6. The Si substrate-based N-polar plane Al-rich component nitride material growth method of claim 1, wherein the growth apparatus of the AlN nucleation layer comprises MCVD, MBE, HVPE, or CVD.
7. The Si substrate-based N-polar plane Al-rich component nitride material growth method of claim 1, wherein the growth method of the AlN nucleation layer comprises sputtering or sol-gel synthesis.
8. The Si substrate-based N-polar plane Al-rich component nitride material growth method of claim 1, wherein the Al-rich component nitride thin film comprises InGaN and an Al component, wherein a mass percentage of the Al component to a mass of the entire Al-rich component nitride thin film is more than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm.
9. The Si substrate-based N-polar plane Al-rich nitride material growth method according to claim 1, wherein the Al-rich nitride thin film comprises AlGaN, and the Al-rich nitride thin film has a crystal orientation of (000 "1).
10. The Si substrate-based N-polar plane Al-rich component nitride material growth method of claim 1, wherein the Al-rich component nitride film comprises InAlGaN and an Al component, wherein a mass percentage of the Al component to a mass of the entire Al-rich component nitride film is greater than 0 and less than 1; the thickness of the nitride film rich in the Al component is between 1nm and 1000 nm; the crystal orientation of the Al-rich nitride thin film is (000-1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010763410.7A CN111863599A (en) | 2020-07-31 | 2020-07-31 | Si substrate-based N-polar face Al-rich component nitride material growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010763410.7A CN111863599A (en) | 2020-07-31 | 2020-07-31 | Si substrate-based N-polar face Al-rich component nitride material growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111863599A true CN111863599A (en) | 2020-10-30 |
Family
ID=72954165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010763410.7A Pending CN111863599A (en) | 2020-07-31 | 2020-07-31 | Si substrate-based N-polar face Al-rich component nitride material growth method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111863599A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023646A (en) * | 2022-01-05 | 2022-02-08 | 季华实验室 | High-resistance GaN-based HEMT device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779466A (en) * | 2012-10-19 | 2014-05-07 | Lg伊诺特有限公司 | Light emitting device |
| CN103797665A (en) * | 2011-08-26 | 2014-05-14 | 住友电气工业株式会社 | Group-III nitride semiconductor laser device |
| CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
-
2020
- 2020-07-31 CN CN202010763410.7A patent/CN111863599A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103797665A (en) * | 2011-08-26 | 2014-05-14 | 住友电气工业株式会社 | Group-III nitride semiconductor laser device |
| CN103779466A (en) * | 2012-10-19 | 2014-05-07 | Lg伊诺特有限公司 | Light emitting device |
| CN109599462A (en) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | The In ingredient enriched nitride material growing method of N polar surface based on Si substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023646A (en) * | 2022-01-05 | 2022-02-08 | 季华实验室 | High-resistance GaN-based HEMT device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9093271B2 (en) | Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method | |
| JP5526129B2 (en) | Method for growing flat semipolar {11-22} plane III-nitride by hydride vapor phase epitaxy (HVPE) | |
| EP2641267B1 (en) | Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein | |
| US6489221B2 (en) | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates | |
| AU2011269874B2 (en) | Substrate with buffer layer for oriented nanowire growth | |
| US8629065B2 (en) | Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) | |
| JP2004524250A (en) | Gallium nitride materials and methods | |
| EP2037013A2 (en) | Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate | |
| CN106960781A (en) | A kind of gallium nitride film and preparation method thereof and graphene film and preparation method thereof | |
| US20130015463A1 (en) | Nitride-based semiconductor device having excellent stability | |
| EP1298709B1 (en) | Method for producing a iii nitride element comprising a iii nitride epitaxial substrate | |
| US20060189019A1 (en) | Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound | |
| CN111863599A (en) | Si substrate-based N-polar face Al-rich component nitride material growth method | |
| CN101901759A (en) | MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate | |
| JP2010062482A (en) | Nitride semiconductor substrate, and method of manufacturing the same | |
| KR101834802B1 (en) | Semiconductor device | |
| JP2007129203A (en) | Manufacturing method of semiconductor device | |
| KR20100104997A (en) | Nitride semiconductor substrate having dislocation blocking layer and manufacturing method thereof | |
| JP2004296701A (en) | Epitaxial substrate, semiconductor device and method for growing crystal for nitride-based semiconductor | |
| KR100839224B1 (en) | Method for manufacturing thick film of gan | |
| CN116607217A (en) | Large-size low-stress nitride epitaxial material and preparation method thereof | |
| JP2009208989A (en) | Compound semiconductor substrate and method for producing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201030 |
|
| RJ01 | Rejection of invention patent application after publication |