CN111834229A - Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer - Google Patents

Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer Download PDF

Info

Publication number
CN111834229A
CN111834229A CN202010720093.0A CN202010720093A CN111834229A CN 111834229 A CN111834229 A CN 111834229A CN 202010720093 A CN202010720093 A CN 202010720093A CN 111834229 A CN111834229 A CN 111834229A
Authority
CN
China
Prior art keywords
polishing
grinding
chemical mechanical
abrasive particles
deionized water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202010720093.0A
Other languages
Chinese (zh)
Inventor
张振宇
郜培丽
孟凡宁
刘婷婷
孟祥东
谢文祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dalian University of Technology
Original Assignee
Dalian University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalian University of Technology filed Critical Dalian University of Technology
Priority to CN202010720093.0A priority Critical patent/CN111834229A/en
Publication of CN111834229A publication Critical patent/CN111834229A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A green environment-friendly chemical mechanical polishing method for a cadmium zinc telluride wafer belongs to the technical field of semiconductor ultra-precision machining. Firstly, grinding a tellurium-zinc-cadmium wafer, wherein the grinding liquid is deionized water, then carrying out chemical mechanical polishing, and preparing the polishing liquid by adopting a rod-shaped mesoporous ceramic abrasive, deionized water, an oxidant, a dispersing agent and a pH regulator. The range of the CZT surface roughness detection after the polishing by adopting the method of the invention is 5 multiplied by 5 mu m2The Ra value reaches 0.26-0.34 nm. The invention realizes the ultra-smooth low-damage chemical mechanical polishing of CZT. And the elastic modulus measurement result of the abrasive particles shows that the elastic modulus of the abrasive particles has influence on the polishing result of the cadmium zinc telluride wafer.

Description

Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer
Technical Field
The invention belongs to the technical field of ultra-precision processing of semiconductors, and relates to a green environment-friendly chemical mechanical polishing method for a cadmium zinc telluride wafer.
Background
Cadmium zinc telluride with the chemical formula Cd1-xZnxTe (CZT for short) is a II-VI family ternary compound semiconductor formed by solid solution of cadmium telluride and zinc telluride, has a plurality of excellent physicochemical properties such as large atomic number, strong photoelectric effect, high energy sensitivity and resolution of detected rays, large forbidden bandwidth, high resistivity, low leakage current under high voltage, good thermal stability and the like, is the most ideal semiconductor material for manufacturing room-temperature X-ray and gamma-ray detectors at present, and has wide application in the high-energy physical fields such as aviation, aerospace, weaponry, nuclear science and technology, astronomical observation, medical diagnosis, safety detection and the like. In addition, the lattice constant of CZT can be modulated by changing the additive component (x) of Zn, so as to realize complete matching with mercury cadmium telluride (HgCdTe) material of any component on the lattice, and thus CZT is also widely applied to substrate materials for epitaxial growth of infrared detector material HgCdTe.
However, the Mohs hardness and fracture toughness of CZT were 1.21GPa respectively8And 0.158MPa.m0.5The material is a typical hard-to-machine soft and brittle material, damages such as hard abrasive particle embedding, deep scratch, large pits and the like are easy to generate by adopting a traditional machining means, the surface roughness value (Ra) is difficult to reach below 0.5nm, and ultra-precise surface machining cannot be realized. The commonly used chemical etching method usually adopts chemical reagents such as bromide, strong acid, strong base, strong oxide and the like which are dangerous and harmful to operators and the operating environment, and does not conform to the development concept of modern green and environment-friendly processing. Moreover, the prior chemical mechanical polishing processing of CZT generally adopts the traditional spherical solid ceramic abrasive particles, such as silicon oxide, cerium oxide, aluminum oxide and the like, and the abrasive particles are caused by the small elastic modulus of the solid ceramic abrasive particles and the small actual contact area of the spherical abrasive particlesUnder the extrusion of a polishing surface and a polishing pad, the elastic deformation is small, the stress area is small, so that the polished surface generates deep scratches and large pits, the surface roughness hardly reaches sub-nanometer level, the sensitivity and the resolution of a detector to high-energy rays can be directly influenced, the high-energy rays can be repeatedly etched on an HgCdTe material which grows by taking the HgCdTe material as a substrate, and the detection performance of the HgCdTe to infrared rays is further reduced. Therefore, it is important to realize green and environment-friendly chemical mechanical polishing of CZT by using novel ceramic abrasive particles. By adopting the novel rod-like mesoporous ceramic abrasive particles and the green and environment-friendly chemical reagent to carry out chemical mechanical polishing on the CZT, the environment can be protected, the harm to the body of an operator can be avoided, the surface defects and the damage can be reduced, and the ultra-smooth surface with the surface roughness value of 0.26-0.34nm can be obtained. And the abrasive particles are compressed in a contact mode through an AFM atomic force microscope, and the measured elastic modulus distribution of the abrasive particles with different length-diameter ratios shows that the mechanical property of the abrasive particles can influence the polishing effect of the CZT wafer.
Disclosure of Invention
The invention provides a green and environment-friendly chemical mechanical polishing method for CZT wafers, which adopts rod-shaped mesoporous ceramic abrasive particles, deionized water, an oxidant, a dispersing agent and a pH regulator to prepare a polishing solution to realize ultra-smooth ultra-low damage chemical mechanical polishing of the CZT wafers.
The technical scheme of the invention is as follows:
a green environment-friendly chemical mechanical polishing method of a cadmium zinc telluride wafer comprises the following specific steps:
step one, uniformly bonding and fixing Cadmium Zinc Telluride (CZT) wafers (namely CZT wafers) on an aluminum alloy carrying disc at intervals, adhering and fixing silicon carbide abrasive paper with abrasive particle sizes of #1000 to #5000 on a cast iron grinding disc, and grinding, wherein grinding liquid is deionized water; during grinding, the grinding pressure is 25-35kPa, the rotating speeds of the grinding disc and the carrying disc are both 45-55rpm, the grinding liquid is deionized water, the flow rate of the deionized water is 5-15mL/min, and the grinding time is 45-75 s; after grinding, washing with deionized water and cleaning ethanol for 15-20min respectively, and drying with compressed air;
step two, carrying out chemical mechanical polishing on the tellurium-zinc-cadmium wafer, wherein the polishing solution is prepared from a rod-shaped mesoporous ceramic abrasive, deionized water, an oxidant, a dispersing agent and a pH regulator; the polishing pad is a porous chloroprene rubber polishing pad, the polishing pressure is 15-25kPa, the rotating speeds of the polishing disk and the carrying disk are both 45-55rpm, the flow rate of the polishing solution is 0.15-0.3mL/min, and the polishing time is 15-25 min;
the rod-shaped mesoporous ceramic abrasive particles are one or a mixture of more than two of silicon oxide, alpha-aluminum oxide, cerium oxide and magnesium oxide, the length-diameter ratio of the abrasive particles is 1-3, the diameter is 260-400nm, the length is 370-930nm, and the weight percentage is 3-8%; the oxidant is one or a mixture of more than two of hydrogen peroxide, potassium iodate and potassium ferrate, and the weight percentage is 0.1 to 0.25 percent; the dispersant is one or more than two of polyethylene glycol, polyvinylpyrrolidone and sodium citrate, and the weight percentage is 0.2-0.6%; the pH regulator is one or more of citric acid, malic acid, lactic acid, acetic acid, and tannic acid, and is used for regulating pH to 3-5.
And step three, after the chemical mechanical polishing, washing the polished.
After polishing, the surface roughness value of the cadmium zinc telluride sample wafer is characterized by an AFM atomic force microscope, and the measuring range is 5 multiplied by 5 mu m2Surface roughness RaReaching 0.26-0.34 nm.
The invention has the beneficial effects that:
1. the formula of the polishing solution provided by the invention adopts green and environment-friendly chemical reagents, so that the polishing solution has no pollution to the environment and no harm to the health of operators, and is compounded with a green manufacturing concept;
2. the polishing method provided by the invention can enable the surface precision of the soft and brittle difficult-to-process material tellurium-zinc-cadmium to reach 0.26nm, realizes ultra-precise and ultra-low damage surface processing, and has very important significance for the application of the tellurium-zinc-cadmium in the fields of aviation, aerospace, military industry, national defense, high-energy physics and the like;
3. the invention explains the influence of the mechanical property of the abrasive particles on the precision of a polished surface and discloses a mechanism that the smaller the elastic modulus of the abrasive particles is, the more easily the abrasive particles are elastically deformed in the chemical mechanical polishing process, and the surface damage is reduced.
Drawings
FIG. 1 is SEM, TEM and HRSEM images of rod-like mesoporous abrasive particles with aspect ratio of 1.
FIG. 2 is the AFM scan of the CZT wafer surface after chemical mechanical polishing in comparative example 1, analyzed by Gwyddion software to determine the surface roughness RaThe value was 0.259 nm.
FIG. 3 is SEM, TEM and HRSEM images of rod-shaped mesoporous abrasive particles with aspect ratio of 2.
FIG. 4 is a graph of the AFM scan of the CZT wafer surface after chemical mechanical polishing of comparative example 2, analyzed by Gwyddion software to determine the surface roughness RaThe value was 0.339 nm.
FIG. 5 is SEM, TEM and HRSEM images of rod-shaped mesoporous abrasive particles with aspect ratio of 3.
FIG. 6 is a graph of the AFM scan of the CZT wafer surface after chemical mechanical polishing of comparative example 3, analyzed by Gwyddion software to determine the surface roughness RaThe value was 0.333 nm.
FIG. 7 shows the results of the elastic modulus of rod-shaped mesoporous abrasive particles with different aspect ratios measured by AFM.
FIG. 8 is a graph of the results of testing the surface roughness, R, of CZT wafers after chemical mechanical polishing in comparative example 4aThe value was 0.300 nm.
FIG. 9 shows the results of testing the surface roughness, R, of CZT wafer after chemical mechanical polishing in comparative example 5aThe value was 0.264 nm.
Detailed Description
The following further describes a specific embodiment of the present invention with reference to the drawings and technical solutions.
The CZT wafer of the workpiece sample is widely applied to the high-energy physical fields of aviation, aerospace, weaponry, nuclear science and technology, astronomical observation, medical diagnosis, safety detection and the like, is often used as a core key component of a room-temperature X-ray and gamma-ray detector and a substrate material for the HgCdTe epitaxial growth of an infrared detector core material, and the ultra-precision processing of the surface of the CZT wafer is of great importance to the performance of the CZT wafer, so that the CZT wafer is selected as an ultra-precision polishing material. The processed sample is Cd0.96Zn0.04Te wafer, CZT wafer thickness is 1.2-1.3mm, and CZT wafer is cut into about 1 × 1cm by diamond wire cutting machine2The sample wafer of (1). And uniformly bonding and fixing 3 cut sample wafers on the same circumference of an aluminum alloy carrying disc at intervals of paraffin, wherein the diameter of the carrying disc is 140mm, the thickness of the carrying disc is 15mm, and carrying out a chemical mechanical polishing test on the CZT wafer on an ultra-precise grinding and polishing integrated machine.
Examples
The CZT sample wafer is first ground. CZT wafer with thickness of 1.2-1.5mm is cut into about 1 × 1cm2Taking 3 cut CZT sample wafers, uniformly bonding and fixing the CZT sample wafers on the same circumference of the aluminum alloy carrying disc at intervals. And (3) adhering and fixing the consolidated silicon carbide sand paper with the abrasive grain size of #4000 on a cast iron grinding disc. During grinding, the grinding pressure is 30kPa, the rotating speeds of the grinding disc and the carrying disc are both 50rpm, the grinding liquid is deionized water, the flow rate of the deionized water is 10mL/min, and the grinding time is 60 s. And after grinding the CZT sample wafer, washing the CZT sample wafer with deionized water and cleaning ethanol for 18min respectively, and drying the CZT sample wafer with compressed air. The grinding stage uses the fixed abrasive for grinding, compared with the free abrasive, the surface oxide layer and the damaged layer caused by ingot cutting can be quickly and efficiently realized, the surface planarization is realized, and unnecessary surface defects caused by the embedding of the free abrasive can be avoided. The silicon carbide abrasive paper is low in price, convenient to use and high in silicon carbide hardness, and can achieve the purposes of quickly removing surface materials, saving time and ensuring efficiency. The grinding pressure is 30kPa, and the rotating speeds of the grinding disc and the object carrying disc are both 50rpm, so that the surface damage layer can be quickly and uniformly removed. The grinding pressure is too high, so that the fixed abrasive is embedded too deeply, the scratch is obvious and the fixed abrasive is not easy to remove; too low a pressure can reduce the material removal rate and affect polishing efficiency. The rotating speed of the grinding disc and the object carrying disc is too high, so that scratches are more easily generated on the surfaces, and the polishing time and cost are increased; too low a rotational speed increases the time of the grinding process and reduces the processing efficiency. Deionized water is selected as grinding fluid, centrifugal force enables the deionized water to be thrown out, residual waste particles generated by grinding can be removed, and the effect of cooling a grinding surface can be achieved.
The CZT wafer is then subjected to chemical mechanical polishing. The MD-chem porous chloroprene rubber polishing pad is adopted, the pores can effectively store polishing solution, the chemical corrosion and abrasive particle mechanical grinding effects of the polishing solution are enhanced, the polishing efficiency is improved, the hardness of the chloroprene rubber is low, and the polishing surface shape precision can be increased. The chemical mechanical polishing proportion and various polishing parameters are determined by comparing tests and taking the surface precision and the material removal rate as indexes.
The rod-shaped mesoporous ceramic abrasive particles are silicon dioxide, the length-diameter ratio of the abrasive particles is 1-3, the diameter is 260-400nm, the length is 370-930nm, and the weight percentage is 3-8%. Silicon oxide, aluminum oxide, cerium oxide and magnesium oxide are ubiquitous in the nature, and one of the silicon oxide, the aluminum oxide, the cerium oxide and the magnesium oxide is selected as polishing abrasive particles, so that the polishing abrasive particles are economical, cheap and environment-friendly. The length-diameter ratio or the particle size of the abrasive particles is too large, so that the abrasive particles are too long and are easy to break or embed into the surface in the polishing process, and surface defects such as scratches, pits and the like are generated; the particle size of the abrasive particles is too small, so that the cutting performance of the abrasive particles is reduced, the polishing rate is further influenced, the abrasive particle residues are easily caused to be difficult to remove, and the subsequent precision detection is influenced. The weight percentage of the grinding material is 3-8%, when the grinding material is too high, the grinding material is wasted, the cost is increased, and when the grinding material is too high, the mechanical grinding effect is increased, and the defects of scratches, pitting corrosion and the like are increased; too low reduces the processing efficiency and fails to balance the chemical corrosion effect, resulting in ineffective removal of the surface oxide layer and the corrosion pits.
The oxidant is hydrogen peroxide, and the weight percentage is 0.1-0.25%. In the chemical mechanical polishing process, the oxidizing agent can oxidize and corrode the surface of the CZT wafer, and the mechanical removal of the surface material by abrasive particles is accelerated. The hydrogen peroxide can effectively corrode the surface of the CZT wafer, and the hydrogen peroxide is a green environment-friendly oxidant, is environment-friendly and is harmless to operators. The weight percentage is 0.1-0.25%, the chemical corrosion action of the oxidant can be increased when the content of the oxidant is too high, the rate of mechanically removing the corrosion layer can not meet the rate of generating the corrosion layer, the surface corrosion effect of the CZT wafer is obvious, and the corrosion pit is obvious; if the content of the oxidizing agent is too low, the mechanical action is stronger than the chemical action, and defects such as scratches and pits are significant, thereby deteriorating the surface quality and lowering the precision.
The dispersant is polyethylene glycol with the weight percentage of 0.2-0.6%. In the polishing solution, the dispersing agent mainly plays a role in dispersing abrasive particles and preventing the abrasive particles from agglomerating. The abrasive particle dispersibility affects the mechanical removal effect of the abrasive particles and the polishing precision of the surface. Polyethylene glycol, polyvinylpyrrolidone and sodium citrate are all green environment-friendly dispersing agents, and abrasive particles can be stably dispersed in the polishing solution. Tests determine that 0.2-0.6 wt% is the optimum range, and polishing precision is affected by too high and too low.
The pH regulator is tannic acid, and has a pH of 3-5. The pH regulator plays a role in stabilizing a polishing solution system and acid etching in the chemical mechanical polishing process, can provide a stable acid environment for the polishing process, and effectively enhances the removal rate of the oxide on the surface of the CZT wafer. Experiments have shown that adjusting the pH to the optimum range of 3-5, with increased or decreased acidity, results in increased corrosion defects on the polished surface.
The polishing pressure was 20kPa, and the rotation speed of the polishing disk and the carrier disk were 50 rpm. The probability of abrasive particles being stressed and embedded can be increased due to overlarge polishing pressure, the grinding effect of the abrasive particles can be increased due to the overlarge rotating speed of the polishing disk and the object carrying disk, so that surface defects such as scratches and pits are generated, and the surface precision is reduced; too low a pressure or too low a rotation speed will reduce the mechanical removal of the abrasive particles, and the oxide layer produced by chemical corrosion cannot be removed immediately, resulting in excessive corrosion and also reducing the surface accuracy.
The flow rate of the polishing liquid was 0.2mL/min, and the polishing time was 20 min. The flow velocity of the polishing solution is too high, so that the accumulation of the polishing solution on the polishing pad is increased, the chemical corrosion effect of the polishing solution is obviously enhanced, corrosion pits on the surface of a wafer are increased, the precision is reduced, the polishing solution is wasted, and the cost is increased; the velocity of flow is too slow, then can not play the effect of chemical corrosion, and the mechanical grinding effect of grit can be replaced to the frictional wear of polishing pad, increases wafer surface defect, and the flow is too low moreover and can't make remaining foreign particle in time discharge, finally leads to wafer surface roughness to increase, and polishing precision descends. The polishing time is too long, so that the effect of obviously improving the precision is not achieved, and the polishing solution is wasted; if the polishing time is too short, the surface damage caused by grinding cannot be removed, and the damage remains, thereby lowering the polishing precision.
After the chemical mechanical polishing, the wafer is washed with deionized water and cleaning ethanol for 18min and dried with compressed air. Deionized water and ethanol are environment-friendly, the cleaning effect is good, residual polishing solution and impurity particles after polishing can be effectively removed by washing in a large amount, and subsequent precision detection and application are facilitated.
After chemical mechanical polishing, the CZT wafer surface roughness was scanned by AFM atomic force microscopy in a contact manner and analyzed by Gwyddion software. The scanning range is 5 multiplied by 5 mu m2, the Ra value is 0.26-0.34nm, the sub-nanometer processing precision is achieved, and the ultra-smooth ultra-low damage chemical mechanical polishing of the CZT wafer is realized.
The method combines grinding and chemical mechanical polishing processes, adopts environment-friendly ceramic abrasive particles, an oxidant, a dispersing agent, a pH regulator and deionized water as chemical mechanical polishing solution, and realizes ultra-smooth ultra-low damage chemical mechanical polishing of the CZT wafer. And the elasticity modulus of the abrasive particles is tested by AFM, the change trend of the elasticity modulus of the abrasive particles shown by the test result is consistent with the change trend of the precision of the chemical mechanical polishing surface, the smaller the elasticity modulus of the abrasive particles is, the larger the deformation degree of the abrasive particles generated by extrusion in the polishing process is, the smaller the damage to the polishing surface is, and the higher the polishing precision is, thereby revealing the influence of the elasticity modulus of the abrasive particles on the polishing.
Comparative example 1
The abrasive particles are rod-shaped mesoporous silica with the length-diameter ratio of 1, the average diameter is 389nm, the average length is 416nm, the morphology and the size distribution of the abrasive particles are shown in figure 1, and the abrasive particles are uniform in size and good in morphology.
After polishing by the polishing method provided by the invention, the CZT wafer surface is scanned by an AFM electron microscope, and FIG. 2 shows the 2D and 3D appearances of the CZT wafer surface tested by AFM in the comparative example, and the roughness R is calculatedaThe value was 0.259 nm.
The elastic modulus of the abrasive grains was measured by an AFM probe contact scanning mode, and the measurement results are shown in fig. 7. The rod-like mesoporous silica abrasive particles having an aspect ratio of 1 had a modulus of elasticity of 2.452GPa, and the modulus of elasticity was the smallest among the rod-like abrasive particles having an aspect ratio of 1 to 3. And the abrasive particles are used for carrying out chemical mechanical polishing experiments, so that ultra-precision machining with the highest surface precision is realized.
Comparative example 2
The abrasive particles are rod-shaped mesoporous silica with the length-diameter ratio of 2, the average diameter is 352nm, the average length is 684nm, the morphology and the size distribution are shown in figure 3, and the abrasive particles are uniform in size and good in morphology.
After polishing by the polishing method provided by the invention, the CZT wafer surface is scanned by an AFM electron microscope, and FIG. 4 shows the 2D and 3D appearances of the CZT wafer surface tested by AFM in the comparative example, and the roughness R is calculatedaThe value was 0.339 nm.
The elastic modulus of the abrasive grains was measured by an AFM probe contact scanning mode, and the measurement results are shown in fig. 7. The rod-shaped mesoporous silica abrasive particle with the aspect ratio of 2 has the elastic modulus of 3.686GPa, and the elastic modulus is centered in the rod-shaped abrasive particles with the aspect ratio of 1-3. And the abrasive particles are used for carrying out chemical mechanical polishing experiments, so that ultra-precision machining with surface precision centered is realized.
Comparative example 3
The abrasive particles are rod-shaped mesoporous silica with the length-diameter ratio of 3, the average diameter is 341nm, the average length is 1035nm, the morphology and the size distribution of the abrasive particles are shown in figure 5, and the abrasive particles are uniform in size and good in morphology.
After polishing by the polishing method provided by the invention, the CZT wafer surface is scanned by an AFM electron microscope, and FIG. 6 shows the 2D and 3D appearances of the CZT wafer surface tested by AFM in the comparative example, and the roughness R is calculatedaThe value was 0.333 nm.
The elastic modulus of the abrasive grains was measured by an AFM probe contact scanning mode, and the measurement results are shown in fig. 7. The rod-like mesoporous silica abrasive particles having an aspect ratio of 3 had a modulus of elasticity of 3.884GPa, and the modulus of elasticity was the largest among the rod-like abrasive particles having an aspect ratio of 1 to 3. And the abrasive particles are used for carrying out chemical mechanical polishing experiments, so that ultra-precision machining with lower surface precision is realized.
Comparative example 4
The polishing solution comprises the following components in percentage by weight: the content of rod-shaped mesoporous silica abrasive particles with the length-diameter ratio of 1 is 3 percent, the content of hydrogen peroxide is 0.2 percent, the content of polyethylene glycol is 0.5 percent, and the pH value is adjusted to be 4.
The technological parameters are as follows: the polishing pressure was 20kPa, and the rotation speed of the polishing disk and the carrier disk were 50 rpm.
After polishing, the CZT wafer surface was scanned using an AFM electron microscope, and FIG. 8 shows the 2D and 3D topography of the CZT wafer surface measured by AFM in this comparative example, calculated as roughness RaThe value was 0.300 nm.
Comparative example 5
The polishing solution comprises the following components in percentage by weight: the content of rod-shaped mesoporous silica abrasive particles with the length-diameter ratio of 3 is 6 percent, the content of hydrogen peroxide is 0.1 percent, the content of polyethylene glycol is 0.3 percent, and the pH value is adjusted to be 4.
The technological parameters are as follows: the polishing pressure was 20kPa, and the rotation speed of the polishing disk and the carrier disk were 50 rpm.
After polishing, the CZT wafer surface was scanned using an AFM electron microscope, and FIG. 9 shows the 2D and 3D topography of the CZT wafer surface measured by AFM in this comparative example, calculated as roughness RaThe value was 0.264 nm.

Claims (1)

1. A green environment-friendly chemical mechanical polishing method of a cadmium zinc telluride wafer is characterized by comprising the following specific steps:
uniformly bonding and fixing tellurium-zinc-cadmium wafers on an aluminum alloy carrying disc at intervals, and bonding and fixing silicon carbide abrasive paper with abrasive grain sizes of #1000 to #5000 on a cast iron grinding disc for grinding, wherein the grinding liquid is deionized water; during grinding, the grinding pressure is 25-35kPa, the rotating speeds of the grinding disc and the carrying disc are both 45-55rpm, the grinding liquid is deionized water, the flow rate of the deionized water is 5-15mL/min, and the grinding time is 45-75 s; after grinding, washing with deionized water and cleaning ethanol for 15-20min respectively, and drying with compressed air;
step two, carrying out chemical mechanical polishing on the tellurium-zinc-cadmium wafer, wherein the polishing solution is prepared from a rod-shaped mesoporous ceramic abrasive, deionized water, an oxidant, a dispersing agent and a pH regulator; the polishing pad is a porous chloroprene rubber polishing pad, the polishing pressure is 15-25kPa, the rotating speeds of the polishing disk and the carrying disk are both 45-55rpm, the flow rate of the polishing solution is 0.15-0.3mL/min, and the polishing time is 15-25 min;
the rod-shaped mesoporous ceramic abrasive particles are one or a mixture of more than two of silicon oxide, alpha-aluminum oxide, cerium oxide and magnesium oxide, the length-diameter ratio of the abrasive particles is 1-3, the diameter is 260-400nm, the length is 370-930nm, and the weight percentage is 3-8%; the oxidant is one or a mixture of more than two of hydrogen peroxide, potassium iodate and potassium ferrate, and the weight percentage is 0.1 to 0.25 percent; the dispersant is one or more than two of polyethylene glycol, polyvinylpyrrolidone and sodium citrate, and the weight percentage is 0.2-0.6%; the pH regulator is one or more of citric acid, malic acid, lactic acid, acetic acid and tannic acid, and is used for regulating pH to 3-5;
and step three, after the chemical mechanical polishing, rinsing for 15-20min by using deionized water and cleaning ethanol in sequence.
CN202010720093.0A 2020-07-23 2020-07-23 Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer Withdrawn CN111834229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010720093.0A CN111834229A (en) 2020-07-23 2020-07-23 Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010720093.0A CN111834229A (en) 2020-07-23 2020-07-23 Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer

Publications (1)

Publication Number Publication Date
CN111834229A true CN111834229A (en) 2020-10-27

Family

ID=72925260

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010720093.0A Withdrawn CN111834229A (en) 2020-07-23 2020-07-23 Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer

Country Status (1)

Country Link
CN (1) CN111834229A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112458543A (en) * 2020-11-16 2021-03-09 西北工业大学 Surface treatment method of CZT radiation detection thin film material
CN112621557A (en) * 2020-12-17 2021-04-09 江苏集萃精凯高端装备技术有限公司 Polishing method of YAG wafer
CN113524017A (en) * 2021-07-16 2021-10-22 昆明物理研究所 Large-area tellurium-zinc-cadmium (211) B material surface polishing method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037260A (en) * 1998-02-20 2000-03-14 Industrial Technology Research Institute Polishing composition
KR20080097954A (en) * 2007-05-03 2008-11-06 주식회사 엘지화학 Cerium oxide powder for abrasive and cmp slurry comprising the same
CN103203681A (en) * 2013-04-07 2013-07-17 大连理工大学 Environment-friendly II-VI class soft fragile crystal grinding and polishing method
CN105602455A (en) * 2016-03-09 2016-05-25 德米特（苏州）电子环保材料有限公司 Preparation method of aluminum oxide polishing powder
CN106078487A (en) * 2016-06-07 2016-11-09 大连理工常州研究院有限公司 Nickel-base alloy solidified abrasive grinding and cmp method
CN106112791A (en) * 2016-07-01 2016-11-16 大连理工常州研究院有限公司 Titanium alloy grinds and cmp method
RU2627711C1 (en) * 2016-11-02 2017-08-10 Акционерное общество "НПО "Орион" Polishing etchant composition for chemical-mechanical polishing of cadmium-zinc telluride
CN108587567A (en) * 2018-01-10 2018-09-28 镇江爱豪科思电子科技有限公司 A kind of abrasive suitable for the soft crisp wafer grinding polishing of cadmium-zinc-teiluride
CN110299287A (en) * 2019-06-24 2019-10-01 上海大学 The processing of surface polishing method of tellurium zincium vestalium thin-film
CN110510618A (en) * 2019-08-20 2019-11-29 大连理工大学 A kind of preparation method of rodlike mesoporous silicon dioxide nano abrasive grain

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037260A (en) * 1998-02-20 2000-03-14 Industrial Technology Research Institute Polishing composition
KR20080097954A (en) * 2007-05-03 2008-11-06 주식회사 엘지화학 Cerium oxide powder for abrasive and cmp slurry comprising the same
CN103203681A (en) * 2013-04-07 2013-07-17 大连理工大学 Environment-friendly II-VI class soft fragile crystal grinding and polishing method
CN105602455A (en) * 2016-03-09 2016-05-25 德米特（苏州）电子环保材料有限公司 Preparation method of aluminum oxide polishing powder
CN106078487A (en) * 2016-06-07 2016-11-09 大连理工常州研究院有限公司 Nickel-base alloy solidified abrasive grinding and cmp method
CN106112791A (en) * 2016-07-01 2016-11-16 大连理工常州研究院有限公司 Titanium alloy grinds and cmp method
RU2627711C1 (en) * 2016-11-02 2017-08-10 Акционерное общество "НПО "Орион" Polishing etchant composition for chemical-mechanical polishing of cadmium-zinc telluride
CN108587567A (en) * 2018-01-10 2018-09-28 镇江爱豪科思电子科技有限公司 A kind of abrasive suitable for the soft crisp wafer grinding polishing of cadmium-zinc-teiluride
CN110299287A (en) * 2019-06-24 2019-10-01 上海大学 The processing of surface polishing method of tellurium zincium vestalium thin-film
CN110510618A (en) * 2019-08-20 2019-11-29 大连理工大学 A kind of preparation method of rodlike mesoporous silicon dioxide nano abrasive grain

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112458543A (en) * 2020-11-16 2021-03-09 西北工业大学 Surface treatment method of CZT radiation detection thin film material
CN112458543B (en) * 2020-11-16 2023-05-19 西北工业大学 Surface treatment method of CZT radiation detection film material
CN112621557A (en) * 2020-12-17 2021-04-09 江苏集萃精凯高端装备技术有限公司 Polishing method of YAG wafer
CN113524017A (en) * 2021-07-16 2021-10-22 昆明物理研究所 Large-area tellurium-zinc-cadmium (211) B material surface polishing method
CN113524017B (en) * 2021-07-16 2022-11-29 昆明物理研究所 Large-area tellurium-zinc-cadmium (211) B material surface polishing method

Similar Documents

Publication Publication Date Title
CN111834229A (en) Environment-friendly chemical mechanical polishing method for cadmium zinc telluride wafer
KR101110682B1 (en) Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
EP2365042B1 (en) Polishing composition and polishing method using the same
Huang et al. Effect of OH− on chemical mechanical polishing of β-Ga 2 O 3 (100) substrate using an alkaline slurry
JP3810588B2 (en) Polishing composition
KR100790926B1 (en) Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer
EP1772503A2 (en) Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate
US6406923B1 (en) Process for reclaiming wafer substrates
US20050215181A1 (en) Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
JP2020528392A (en) Indium phosphide wafers with pits on the back side, as well as methods and etching solutions for manufacturing them.
CN114231182A (en) Easy-to-cleave gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof
EP1693887A1 (en) Processing method of silicon wafer
KR20020017910A (en) Method for converting a reclaim wafer into a semiconductor wafer
Zhang et al. Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals
US7479204B2 (en) Method of manufacturing semiconductor substrate and method of evaluating quality of semiconductor substrate
JP5736681B2 (en) Polishing liquid and method for producing glass substrate for magnetic disk
US6238590B1 (en) Tribochemical polishing of ceramics and metals
JPWO2019043890A1 (en) Method for manufacturing semiconductor wafer
WO2023026948A1 (en) SURFACE PROCESSING METHOD FOR GaN SUBSTRATE AND MANUFACTURING METHOD FOR GaN SUBSTRATE
CN106914815A (en) The Ginding process of semi-conductor silicon chip
CN114211389A (en) Indium phosphide wafer and preparation method thereof
JP2000208578A (en) Evaluation method for silicon wafer and silicon wafer
CN117733719B (en) Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method
Reed et al. The effects of abrasion gettering on silicon material with swirl defects
KR102492236B1 (en) Polishing device and method of polishing for wafer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20201027