CN111819655A - Source matcher - Google Patents
Source matcher Download PDFInfo
- Publication number
- CN111819655A CN111819655A CN201980007014.7A CN201980007014A CN111819655A CN 111819655 A CN111819655 A CN 111819655A CN 201980007014 A CN201980007014 A CN 201980007014A CN 111819655 A CN111819655 A CN 111819655A
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- Prior art keywords
- unit
- distributor
- distributors
- matching unit
- power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Abstract
The source matcher of the present invention can include: an RF oscillating unit for applying power for plasma generation to a plurality of coils installed in a chamber; an RF matching unit for matching a load impedance (load impedance) to a characteristic impedance (characteristic impedance) of at least one of the chamber, the RF oscillating unit, and the coil; a distributor unit for distributing the output power of the RF matching unit to each coil; and an adjusting unit for adjusting the matching efficiency of the RF matching unit or the distributor unit.
Description
Technical Field
The present invention relates to a source matcher for impedance matching of a plasma chamber.
Background
The etching process for a substrate (wafer or glass) is a process of selectively removing the uppermost layer of the substrate through the pinholes of a Photoresist (PR) layer, and can be divided into wet etching (wet etch) using an etchant and dry etching (dry etch) using a gas according to the etching method.
When plasma is used as an etching means in the dry etching method, first, gas is injected into a chamber in which a substrate is accommodated, then the injected gas is excited to a high energy level by applying high-energy high-frequency to the chamber to form a plasma state, and then etching is performed by making the excited ionized particles incident on the surface of the substrate.
In order to enable normal generation of plasma in the chamber and precise control of the density and the like of the plasma formed in the chamber, it is necessary to match the impedance between the source terminal and the load terminal.
Disclosure of Invention
Technical subject
The invention aims to provide a source matching box with improved impedance matching efficiency among a chamber, an RF (radio frequency) oscillating part and a coil.
Means for solving the problems
The source matching device to which the present invention is applied can include: an RF oscillating unit for applying power for plasma generation to a plurality of coils installed in a chamber; an RF (radio frequency) matching unit for matching a load impedance (load impedance) to a characteristic impedance (characteristic impedance) of at least one of the chamber, the RF oscillating unit, and the coil; a distributor unit for distributing the output power of the RF matching unit to each coil; and an adjusting unit for adjusting the matching efficiency of the RF matching unit or the distributor unit.
Effects of the invention
The source matching unit to which the present invention is applied can improve impedance matching efficiency before the chamber, the RF oscillator, and the coil by the adjusting unit for adjusting matching efficiency of the RF matching unit or the distributor unit.
Drawings
Fig. 1 is a schematic diagram illustrating a plasma apparatus equipped with a source matching box to which the present invention is applied.
Fig. 2 is a circuit diagram illustrating an RF matching unit to which the present invention is applied.
Fig. 3 is a circuit diagram illustrating a distributor section to which the present invention is applied.
Detailed Description
Fig. 1 is a schematic diagram illustrating a plasma apparatus equipped with a source matching box to which the present invention is applied.
The plasma apparatus in fig. 1 is capable of processing (vapor deposition, etching, and cleaning) a processing object 10 such as a substrate or a wafer by using plasma.
The source matching unit may include an RF oscillating unit 110, an RF matching unit 130, a distributor unit 150, and an adjusting unit 170.
The RF oscillator 110 can apply power for plasma generation to the plurality of coils 50 installed in the chamber 30.
The chamber 30 can accommodate therein the object 10 to be processed (vapor deposition, etching, and cleaning) by plasma. As an example, Inductively Coupled Plasma (ICP) can be formed inside the chamber 30 by loading the coil 50 with power for Plasma generation.
A receiving space for receiving the processing object 10 is provided in the chamber 30, and the corresponding receiving space can be sealed with respect to the outside when performing the plasma process.
A reaction gas suitable for activating a plasma such as argon (Ar) or the like can be supplied to the inside of the chamber 30 through the gas passage or the gas plate.
A vacuum state can be formed inside the chamber 30 by means of a PUMP (PUMP) connected to the receiving space of the chamber 30.
The upper part of the chamber 30 can be covered and sealed by a cover 31, and an O-ring can be inserted between the cover 31 and the chamber 30. The cover 31 preferably comprises a quartz glass plate, and the cover 31 can be located between the antenna unit and the receiving space of the chamber 30.
As an embodiment not shown, the coil 30 may be disposed in the internal space of the chamber 30.
A chuck unit 90 for supporting the processing object 10 can be provided in the housing space of the chamber 30.
The chuck unit 90 is provided inside the chamber 30 and can support the processing object 10 accommodated in the chamber 30. In order to perform plasma processing on the processing object supported by the chuck unit 90, the chuck unit 90 is preferably attached to face the coil 50. As an example, when the coil 50 is provided at an upper portion of the chamber 30, the chuck unit 90 can be provided at a lower portion of the chamber 30. In order to form a plasma environment in the receiving space of the chamber 30 together with the coil 50, the chuck unit 90 can include an electrostatic chuck (electrostatic chuck).
When the coil 50 receives the electric power for plasma generation applied from the RF oscillating unit 110, an electromagnetic field can be applied to the chamber 30. The electromagnetic field loaded by the coil 50 can excite a plasma inside the chamber 30. The coil 50 can be fixed or movable relative to the chamber 30.
A plurality of coils 50 may be provided to adjust the density and the like of plasma present in each region of the housing space in the chamber 30 on a plane. The coils 50 can be arranged at different positions.
The RF matcher 130 may match load impedance (load impedance) to characteristic impedance (characteristic impedance) of at least one of the chamber 30, the RF oscillating portion 110, and the coil 50.
As an example, the RF matcher part 130 can match load impedance (load impedance) to characteristic impedance (characteristic impedance) of the common cable 109 connected to the RF oscillating part 110.
The chuck unit 90 can be connected with a bias oscillator for loading an RF bias power and a bias matcher for matching a load impedance to a characteristic impedance of a cable connected with the bias oscillator. In the present description, the case where the RF matching unit 130 is connected to the coil 50 will be mainly described, but a bias matching unit may be included.
The plasma apparatus to which the present invention is applied can supply power to the chuck unit 90 in a state where the processing object 10 is set to the chuck unit 90. When the electric power is supplied, the processing object 10 can be fixed to the chuck unit 90 by means of an electrostatic force.
After the processing object 10 is fixed to the chuck unit 90, the source gas is injected into the chamber 30 through the gas injection part at the upper part of the chamber 30, and at this time, the bias power is applied to the chuck unit 90 and the source power is applied to the coil 50. When the etching process is performed, plasma having a strong oxidizing ability can be formed inside the chamber 30 by applying plasma generation power corresponding to bias power and source power. At this time, positive ions in the plasma are incident on the surface of the object 10 and collide with each other, thereby etching the object 10.
The RF matching unit 130 is for matching to a specific impedance preset in the RF oscillation unit 110, and may include an inductor L and a variable capacitor C.
When the plasma generation electric power is input from the RF oscillator unit 110 to the RF matching unit 130, the relative phase difference detected at the current detection terminal and the voltage detection terminal of the VI (voltage impedance) sensor is converted into a voltage difference, and is transmitted to the adjustment unit 170.
The adjusting part 170 can match the impedance value of the variable capacitor of the RF matcher part 130 to, for example, 50 Ω by driving the driving motor 730 according to the transmitted voltage value, and thereby ensure that various process processes can be properly performed using plasma in the chamber 30.
The adjustment amount and initial setting value (pre-setting) of the variable capacitor in the RF matching unit 130, a signal generated by oscillation in the RF oscillation unit, and the like can be monitored externally by being transmitted to a computer generally called a process module controller (process module controller).
There is a possibility that the VI sensor 710 may not react due to a dead zone (dead zone) caused by internal factors such as residual deviation (offset) generated between each element and each loop constituting the RF matching unit 130, noise (noise) caused by harmonics (harmonics) generated in a high frequency signal, and a minute impedance change generated in a process of etching a substrate by plasma.
The blind spot phenomenon of the VI sensor 710 may cause the RF matching unit 130 not to oscillate and generate the shock driving signal, and thus the variable capacitor may not be adjusted to a specific impedance, which may cause the entire system to become unstable.
In order to reduce residual variation, noise, and fine impedance variation caused by the blind spot phenomenon of the VI sensor, the distributor unit 150 and the adjusting unit 170 may be additionally used in the source matching unit to which the present invention is applied, in addition to the RF matching unit 130.
The distributor unit 150 can distribute the output power of the RF matching unit 130 to the respective coils 50. In this case, the distributor unit 150 may be provided with a variable capacitor capable of adjusting impedance. The divider part 150 equipped with a variable capacitor can also participate in impedance matching, similar to the RF matcher part 130.
Since the distributor unit 150 is located at the coil end side of the RF matching unit 130, it is possible to quickly and accurately reduce minute impedance changes in the chamber 30, residual variations due to the respective elements of the RF matching unit 130, and noise.
The adjusting unit 170 can adjust the matching efficiency of the RF matching unit 130 or the distributor unit 150.
The adjustment unit 170 can adjust the impedance matching efficiency while matching the impedance between the chamber 30, the RF oscillation unit 110, and the coil 50 by adjusting the variable capacitor of the RF matching unit 130 or the variable capacitor of the divider unit 150.
In the present invention, impedance adjustment can be performed in the distributor part 150 in addition to the RF matcher part 130, and thus impedance matching efficiency can be accurately adjusted.
Fig. 2 is a circuit diagram illustrating the RF matching unit 130 to which the present invention is applied.
The RF oscillating unit 110 may include a high frequency oscillating unit 111 and a low frequency oscillating unit 113 so that plasma for processing the processing object 10 can be normally generated in the chamber 30.
The high-frequency oscillation unit 111 can generate 10 to 17Mhz high-frequency power.
The low-frequency oscillation unit 113 can generate low-frequency power of 200 to 600 KHz. At this time, the low-frequency power can correspond to the plasma generation power that is applied to the coil 50 together with the high-frequency power.
The RF matching unit 130 may include a high frequency matching unit 131 and a low frequency matching unit 133 corresponding to the high frequency oscillation unit 111 and the low frequency oscillation unit 113.
The high frequency matching unit 131 is connected to the output terminal of the high frequency oscillation unit 111, and performs impedance matching on the high frequency power. The high-frequency matching unit 131 can output high-frequency power of 10 to 17 Mhz.
The low frequency matching box 133 is connected to an output terminal of the low frequency oscillation unit 113, thereby performing impedance matching on the low frequency power. The low frequency matching unit 133 can output low frequency power of 200 to 600 KHz.
In order to be able to load the high frequency power and the low frequency power into the coil 50 together, the output terminal of the high frequency matching unit 131 and the output terminal of the low frequency matching unit 133 may be electrically connected.
The output terminal of the high frequency matcher part 131, the output terminal of the low frequency matcher part 133, and the input terminal of the distributor part 150 can be connected to the same common cable.
RF power in which the high-frequency power output from the high-frequency matching unit 131 and the low-frequency power output from the low-frequency matching unit 133 are superimposed can be input to the distributor unit 150 through the common cable 109.
The high-frequency matching unit 131 may include a 1 st high-frequency capacitor C1 connected in series with the high-frequency oscillation unit 111, a high-frequency inductor L1 connected in parallel with the 1 st high-frequency capacitor C1, and a 2 nd high-frequency capacitor C2 connected in series with the high-frequency inductor L1.
The low frequency matching unit 133 may include a 1 st low frequency capacitor C3 connected in series to the low frequency oscillation unit 113, a low frequency inductor L2 connected in parallel to the 1 st low frequency capacitor C1, and a 2 nd low frequency capacitor C4 connected in series to the low frequency inductor L1.
The respective capacitors provided in the RF matcher part 130, such as the 1 st high frequency capacitor C1, the 2 nd high frequency capacitor C2, the 1 st low frequency capacitor C3, and the 2 nd low frequency capacitor C4, may include variable capacitors. The adjustment section 170 can match the impedance by adjusting each variable capacitor.
Fig. 3 is a circuit diagram illustrating a distributor unit 150 to which the present invention is applied.
In order to adjust the matching efficiency, the adjustment unit 170 may be provided with a VI sensor 710.
In the plasma apparatus, m (where m is a natural number of 2 or more) coils 50 can be provided. As an example, in the drawing, m is 6, that is, a total of 6 coils, that is, the 1 st coil 51, the 2 nd coil 52, the 3 rd coil 53, the 4 th coil 54, the 5 th coil 55, the 6 th coil 56, and the like are provided.
Depending on the number of coils 50, the VI sensor 710 can also be equipped with m. As an example, a 1VI sensor 711, a 2VI sensor 712, a 3VI sensor 713, a 4VI sensor 714, a 5VI sensor 715, and a 6VI sensor 716 are provided in the drawing.
The dispenser part 150 can include m dispensers. As an example, a 1 st dispenser 151, a 2 nd dispenser 152, a 3 rd dispenser 153, a 4 th dispenser 154, a 5 th dispenser 155, and a 6 th dispenser are provided in the drawings.
The output end of the nth distributor can be connected with the nth coil (wherein n is more than or equal to 1 and less than or equal to m, and n is a natural number).
As an example, the 1 st divider 151 can have an output connected to the 1 st coil 51.
The output of the 2 nd divider 152 can be connected to the 2 nd coil 52.
The 3 rd distributor 153 has an output terminal connectable to the 3 rd coil 53.
The output of the 4 th divider 154 can be connected to the 4 th coil 54.
The output of the 5 th divider 155 can be connected to the 5 th coil 55.
The output of the 6 th divider 156 can be connected to the 6 th coil 56.
The nVI th sensor can detect power at the output of the nth divider. Alternatively, the nVI th sensor can detect a relative phase difference detected in a current detection terminal and a voltage detection terminal electrically connected to the output terminal of the nth divider.
As an example, the 1 st VI sensor 711 can detect power at the output of the 1 st divider 151 or detect a relative phase difference.
The 2 nd VI sensor 712 can detect the power at the output of the 2 nd divider 152 or detect the relative phase difference.
The 3VI sensor 713 can detect power at the output of the 3 rd divider 153 or detect a relative phase difference.
The 4 th VI sensor 714 can detect power at the output of the 4 th divider 154 or detect relative phase difference.
The 5VI sensor 715 can detect power at the output of the 5 th divider 155 or detect a relative phase difference.
The 6VI sensor 716 can detect the power at the output of the 6 th splitter 156 or detect the relative phase difference.
The inputs of the m distributors can be connected to a common cable, respectively.
Since the divider and the VI sensor are formed in each coil, the adjustment unit 170 can perform impedance matching individually for each coil.
In each distributor, a 1 st branch capacitor C5 and a branch inductor L3 connected in series with the common cable 109, and a 2 nd branch capacitor C6 connected in parallel with the 1 st branch capacitor C5 or the branch inductor L3 can be provided. At this time, the 2 nd branch capacitor C6 may include a variable capacitor adjusted by the adjustment section 170.
The adjusting unit 170 can adjust the impedance of the RF matching unit 130 and the impedance of the distributor unit 150 according to the detection result of the VI sensor. Specifically, the adjustment unit 170 can adjust the variable capacitor provided in the RF matching unit 130 and the variable capacitor provided in the distributor unit 150.
The RF matching unit 130 and the distributor unit 150 may include variable capacitors whose capacitance (capacitance values) can be changed by rotating a knob, for example, a 1 st high-frequency capacitor C1, a 2 nd high-frequency capacitor C2, a 1 st low-frequency capacitor C3, a 2 nd low-frequency capacitor C4, and a 2 nd branch capacitor C6.
The adjusting part 170 may include a driving motor 730 that rotates the knob according to the detection result of the VI sensor. The adjustment unit 170 can change the impedance of the variable capacitor by rotating the knob by the number of rotations calculated based on the detection result of the VI sensor. In this case, the drive motor 730(M) may be provided in each variable capacitor.
The adjustment unit 170 can perform impedance matching on the entire system by adjusting the variable capacitor of the RF matching unit, or can perform impedance matching independently on each coil by adjusting the variable capacitor of the divider unit.
The adjusting part 170 can include a relay 750. In this case, the relay 750 can be mounted on each distributor. Specifically, the relays 750 can be installed at the extreme ends of the respective distributors, respectively.
The relay 750 can switch (on-off) the electrical connection between each dispenser and each coil based on the detection result of the VI sensor. When the relay 750 is in an on state, the electrical connection between each distributor and each coil can be turned on, and when the relay 750 is in an off state, the electrical connection between each distributor and each coil can be turned off.
When the relay 750 is in the off state, the load impedance on the coil side will increase infinitely, and the residual deviation and noise can be removed with the infinitely increased load impedance.
When the relay 750 is in an on state, the relay 750 can be periodically switched by the adjusting part 170 because the residual deviation and the noise are likely to be newly generated as time passes.
In addition, the offset value of the VI sensor can be easily set using the relay 750, and the operation of the coil can be forcibly interrupted in an emergency.
In order to reduce various residual deviations, noise, and the like, RF power can be introduced to the center of the distributor portion 150 equipped with a plurality of distributors through a common cable. In this case, the distributors may be arranged at equal angles with respect to the center of the distributor portion 150.
The distributor portion 150 may be provided with a plate-shaped body for supporting the distributor. As an example, in the case of being provided with 6 dispensers, the respective dispensers can be arranged on the same plane at intervals of 60 degrees, for example, mounted on the body in such a manner as to be arranged on the xy plane.
By arranging the plurality of distributors at equal angles with respect to the center of the main body, it is possible to cancel out the effect generated between the distributors facing each other. Further, imbalance of the impedance on the distributor side can be prevented.
The common cable can be branched from the center of the distributor part 150, specifically, the center of the main body and connected to the respective distributors.
Each divider, the variable capacitor C6 provided in each divider, and the peripheral circuit 107 connected to each divider can be arranged axisymmetrically with respect to the common cable, and can be equivalent circuits.
The end of the utility cable can be input to the distributor portion 150 in a state perpendicular to an imaginary plane (xy plane in the drawing) in which a plurality of distributors are arranged. The end of the common cable, which is input in a state perpendicular to the imaginary plane, can be represented by a dot on the plane as shown in fig. 3.
The utility cable can branch off through a branch 108 extending from the center between the individual distributors to the individual distributors. The respective branch lines can be connected directly to the distributor or else to the distributor after passing through the various peripheral circuits.
In this case, when the length of each branch line, the position of each peripheral circuit, and the like are arbitrarily set, the load impedance is not uniform due to the branch lines and the peripheral circuits. In the present embodiment, the branch line, the distributor, the variable capacitor, and the peripheral circuit can be arranged axisymmetrically with respect to the common cable.
In this case, each divider can be an equivalent loop. Each leg can be an equivalent loop. Each variable capacitor can be an equivalent loop. Each peripheral circuit can be an equivalent circuit. In this case, the equivalent circuit means not only the circuit diagram but also all the same symmetry in terms of the length and position of the branch line, the position of the variable capacitor, and other mechanisms. In the present embodiment, it is possible to cancel out the effect induced by the branch line and the peripheral circuit.
Claims (9)
1. A source matcher, comprising:
an RF oscillating unit for applying power for plasma generation to a plurality of coils installed in a chamber;
an RF matching unit for matching a load impedance to a characteristic impedance of at least one of the chamber, the RF oscillating unit, and the coil;
a distributor unit for distributing the output power of the RF matching unit to each coil; and an adjusting unit for adjusting the matching efficiency of the RF matching unit or the distributor unit.
2. The source matcher of claim 1, wherein:
the RF oscillating unit includes a high frequency oscillating unit and a low frequency oscillating unit,
the high-frequency oscillation unit generates 10 to 17Mhz high-frequency power,
the low frequency oscillation part generates 200-600 KHz low frequency power,
the RF matching unit includes a high frequency matching unit and a low frequency matching unit,
the high frequency matching unit is connected to the output end of the high frequency oscillation unit and outputs 10 to 17Mhz of high frequency power,
the low frequency matcher is connected to the output end of the low frequency oscillation part and outputs 200-600 KHz low frequency power.
3. The source matcher of claim 2, wherein:
the output end of the high frequency matching unit is electrically connected with the output end of the low frequency matching unit,
the output terminal of the high frequency matching unit, the output terminal of the low frequency matching unit, and the input terminal of the distributor unit are connected to the same common cable,
RF power in which the high frequency power output from the high frequency matching unit and the low frequency power output from the low frequency matching unit are superimposed is input to the distributor unit through the common cable.
4. The source matcher of claim 3, wherein:
the adjustment part is provided with a VI sensor,
the coil is provided with m coils, wherein m is a natural number more than 2,
the VI sensor described above is equipped with m,
the above-mentioned distributor portion includes m distributors,
the output end of the nth distributor is connected with the nth coil, wherein n is more than or equal to 1 and less than or equal to m, n is a natural number,
the nVI th sensor detects power at the output terminal of the nth divider, or detects a relative phase difference detected in a current detection terminal and a voltage detection terminal electrically connected to the output terminal of the nth divider,
the input ends of the m distributors are connected to the common cable, respectively.
5. The source matcher of claim 4, wherein:
the adjusting part adjusts the impedance of the RF matcher part and the impedance of the distributor part according to the detection result of the VI sensor,
the RF matching unit and the distributor unit are provided with variable capacitors whose capacitance can be changed by rotating knobs,
the adjusting unit includes a driving motor for rotating the knob according to the detection result of the VI sensor, and the driving motor is provided in each variable capacitor.
6. The source matcher of claim 4, wherein:
the above-mentioned adjusting part includes a relay,
the relays are mounted to the respective distributors, and the electrical connections between the respective distributors and the respective coils are switched on and off based on the detection results of the VI sensors.
7. The source matcher of claim 4, wherein:
the RF power is introduced into the center of the distributor portion equipped with a plurality of the distributors through the common cable,
each distributor is arranged at an equal angle by taking the center of the distributor part as a reference,
the common cable is branched from the center of the distributor portion and connected to each distributor.
8. The source matcher of claim 7, wherein:
each of the distributors, the variable capacitor provided in each of the distributors, and the peripheral circuits connected to each of the distributors are arranged axisymmetrically with respect to the common cable described above, and are all equivalent circuits.
9. The source matcher of claim 1, wherein:
the above-mentioned distributor portion is equipped with a plurality of distributors,
the adjustment part is provided with a VI sensor,
the VI sensor detects power at the output terminal of each of the distributors, or detects a relative phase difference detected in a current detection terminal and a voltage detection terminal electrically connected to the output terminal of each of the distributors,
the inputs of the distributors are connected to a common cable,
the adjusting part adjusts the impedance of the RF matcher part and the impedance of the distributor part according to the detection result of the VI sensor,
the RF matching unit and the distributor unit are provided with variable capacitors whose capacitance can be changed by rotating knobs,
the adjusting part comprises a driving motor for rotating the knob according to the detection result of the VI sensor,
the above-described drive motor is provided in each variable capacitor,
RF power in which high frequency power and low frequency power are overlapped is introduced to the center of the distributor portion equipped with a plurality of the distributors through the common cable,
each distributor is arranged at an equal angle by taking the center of the distributor part as a reference,
the common cable is branched from the center of the distributor portion and connected to each distributor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0003732 | 2018-01-11 | ||
| KR1020180003732A KR102024185B1 (en) | 2018-01-11 | 2018-01-11 | Source matcher |
| PCT/KR2019/000440 WO2019139395A1 (en) | 2018-01-11 | 2019-01-11 | Source matcher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111819655A true CN111819655A (en) | 2020-10-23 |
| CN111819655B CN111819655B (en) | 2023-07-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201980007014.7A Active CN111819655B (en) | 2018-01-11 | 2019-01-11 | Source matcher |
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| Country | Link |
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| KR (1) | KR102024185B1 (en) |
| CN (1) | CN111819655B (en) |
| WO (1) | WO2019139395A1 (en) |
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| KR102386814B1 (en) * | 2020-06-30 | 2022-04-15 | 인투코어테크놀로지 주식회사 | Plasma generating device and control method thereof |
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| US7879185B2 (en) * | 2003-12-18 | 2011-02-01 | Applied Materials, Inc. | Dual frequency RF match |
| KR100771336B1 (en) | 2005-09-02 | 2007-10-29 | 학교법인 호서학원 | Impedance Matching Apparatus for Using RF Matcher |
| JP4817923B2 (en) * | 2006-03-29 | 2011-11-16 | 三井造船株式会社 | Plasma generating apparatus and plasma generating method |
| KR20140137964A (en) * | 2013-05-24 | 2014-12-03 | 엘아이지에이디피 주식회사 | Inductively coupled plasma processing apparatus and control method thereof |
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2018
- 2018-01-11 KR KR1020180003732A patent/KR102024185B1/en active IP Right Grant
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2019
- 2019-01-11 CN CN201980007014.7A patent/CN111819655B/en active Active
- 2019-01-11 WO PCT/KR2019/000440 patent/WO2019139395A1/en active Application Filing
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| CN1543662A (en) * | 2001-08-16 | 2004-11-03 | 应用材料有限公司 | Adjustable dual frequency voltage dividing plasma reactor |
| TW200850082A (en) * | 2007-03-30 | 2008-12-16 | Mitsui Engineering & Shipbuilding Co Ltd | Plasma generator and film forming apparatus using plasma |
| KR100934402B1 (en) * | 2009-09-07 | 2009-12-31 | 아리온테크 주식회사 | Rf split monitoring system |
| CN102820198A (en) * | 2011-06-10 | 2012-12-12 | 东京毅力科创株式会社 | High frequency power distribution device and substrate processing apparatus using same |
| US20150348854A1 (en) * | 2014-06-03 | 2015-12-03 | Lam Research Corporation | Multi-station plasma reactor with rf balancing |
| CN105321792A (en) * | 2014-06-03 | 2016-02-10 | 朗姆研究公司 | Multi-station plasma reactor with RF balancing |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102024185B1 (en) | 2019-09-23 |
| KR20190085635A (en) | 2019-07-19 |
| CN111819655B (en) | 2023-07-14 |
| WO2019139395A1 (en) | 2019-07-18 |
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