CN111762755A - Preparation method of narrow-bandgap semiconductor/superconductor heterojunction nanowire - Google Patents

Preparation method of narrow-bandgap semiconductor/superconductor heterojunction nanowire Download PDF

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CN111762755A
CN111762755A CN202010672178.6A CN202010672178A CN111762755A CN 111762755 A CN111762755 A CN 111762755A CN 202010672178 A CN202010672178 A CN 202010672178A CN 111762755 A CN111762755 A CN 111762755A
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superconductor
narrow
nanowire
bandgap semiconductor
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潘东
刘磊
赵建华
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Institute of Semiconductors of CAS
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Abstract

A preparation method of a narrow-bandgap semiconductor/superconductor heterojunction nanowire comprises the following steps: the method comprises the steps of placing a substrate (10) in preparation equipment, growing a semiconductor nanowire (11) on the surface of the substrate, taking the semiconductor nanowire (11) as an inner core, growing a narrow-bandgap semiconductor nanowire shell layer (12) on the side wall of the semiconductor nanowire (11) in an in-situ epitaxial mode, and growing a superconductor layer (13) on the surface of the narrow-bandgap semiconductor nanowire shell layer (12) in an in-situ epitaxial mode. The narrow-bandgap semiconductor/superconductor heterojunction nanowire prepared by the method has high crystal quality, and the heterojunction interface can reach atomic level flatness.

Description

Preparation method of narrow-bandgap semiconductor/superconductor heterojunction nanowire
Technical Field
The disclosure relates to the technical field of semiconductor material preparation, in particular to a preparation method of a narrow bandgap semiconductor/superconductor heterojunction nanowire.
Background
Fault tolerant topological quantum computing based on Majorana fermi is a method proposed and approved in recent years to solve the problem of quantum computer error correction. Detecting and finding the Majorana fermi is the key to its use for fault tolerant topological quantum computation. In 2012, the group of professors Kouwenhoven [ Science 336(2012)1003] of the dalf university in the netherlands and the group of professors xu hong university in sweden [ Nano Letters 12(2012)6414] in sweden, etc., experimentally demonstrated the presence of Majorana zero energy state in the topological superconducting nanowires, and the electrical conductance of the Majorana zero energy state has quantized characteristics, respectively. However, in these experiments, the superconducting metal on the semiconductor nanowire is prepared by a conventional non-epitaxial deposition method, and the semiconductor nanowire/superconducting heterojunction nanowire obtained in this way has a soft super-conduction energy gap formed in the nanowire by the neighbor effect, wherein a topologically mediocre low energy state, namely an andenlev bound state, exists in the soft super-conduction energy gap, and the energy of the soft super-conduction energy gap is smaller than that of the superconducting energy gap induced by the neighbor effect. The Andeft bound state can show experimental signals similar to the zero energy state of Majorana in the measurement of differential conductance and Josephson effect, and further, the Andeft bound state can cause the decoherence of quantum information carried by the zero energy state of the Majorana, which is extremely unfavorable for the processing of topological quantum information. Recent theoretical studies have shown that the appearance of the above-mentioned soft superconducting energy gap results from interfacial disorder between the semiconductor nanowire and the superconductor.
At present, the preparation of high-quality semiconductor/superconductor heterojunction nanowires which can realize quasi-one-dimensional ballistic transport and have interfaces reaching the atomic level is a main method for eliminating soft super-conduction energy gaps. For example: in 2015, a Marcus professor team of the university of Copenhagen, Denmark [ Nature Materials 14 (2015)400] directly epitaxially grows a high-quality InAs nanowire on an InAs substrate by using an MBE technology, and epitaxially grows a superconducting metal Al in situ to obtain a high-quality InAs/Al heterojunction nanowire and realize a hard superconducting energy gap. However, the method of directly epitaxially growing nanowires on a substrate is limited by lattice mismatch, and semiconductor materials with large lattice mismatch, especially InSb, are difficult to be used for preparing high-quality nanowires. In order to solve the difficulty, in 2018, a Kouwenhoven professor team of Kouwenhoven of Delv's science and technology [ Nature 556(2018)74] utilizes the MOCVD technology to grow high-quality InSb nanowires on the axis of InP nanowires, and transfers the InSb nanowires to an MBE system to epitaxially grow superconducting metal Al, so that InSb/Al heterojunction nanowires are obtained, a hard superconducting energy gap is realized, a quantized conductance platform is particularly observed, and a solid foundation is laid for topological quantum calculation based on a narrow-bandgap semiconductor/superconductor nanowire system. Because MOCVD technology can not extend superconducting metal Al, a sample must be transferred in the preparation process, and the surface of the nanowire is extremely easy to damage in the transfer process, so that an atomically flat semiconductor/superconductor heterogeneous interface is difficult to obtain. Therefore, exploring new ways to prepare high-quality narrow-bandgap semiconductor/superconductor heterogeneous nanowires for studying Majorana bound state remains one of the important issues that needs to be solved currently.
Disclosure of Invention
The invention provides a preparation method of a narrow-bandgap semiconductor/superconductor heterojunction nanowire, which is used for obtaining the narrow-bandgap semiconductor/superconductor heterojunction nanowire with high crystal quality and smooth heterojunction interface at atomic level.
The disclosure provides a method for preparing a narrow bandgap semiconductor/superconductor heterojunction nanowire, which comprises the following steps: placing a substrate in a preparation device; growing a semiconductor nanowire on the surface of the substrate; taking the semiconductor nanowire as an inner core, and epitaxially growing a narrow-bandgap semiconductor nanowire shell layer on the side wall of the semiconductor nanowire in situ; and epitaxially growing a superconductor layer on the surface of the narrow bandgap semiconductor nanowire shell layer in situ.
Optionally, the semiconductor nanowires are grown perpendicular to the substrate surface.
Optionally, the narrow bandgap semiconductor nanowire shell layer and the superconductor layer are both prepared in a high vacuum environment.
Optionally, the in-situ epitaxial growth of the narrow-bandgap semiconductor nanowire shell layer on the sidewall of the semiconductor nanowire, and the method of in-situ epitaxial growth of the superconductor layer on the surface of the narrow-bandgap semiconductor nanowire shell layer include molecular beam epitaxy and chemical beam epitaxy.
Optionally, the material for preparing the semiconductor nanowire comprises one of compound semiconductors InAs, GaAs, InP, GaP and GaSb, and the material for preparing the narrow-GaP semiconductor shell layer comprises compound semiconductors InAs, InSb and InAs1-xSbx(0 < x < 1), the material for preparing the superconductor includes elemental superconductor, alloy superconductor and compound superconductorOne of them.
Another aspect of the present disclosure provides a narrow bandgap semiconductor/superconductor heterojunction nanowire, comprising: a semiconductor nanowire grown as a core on a substrate; the narrow bandgap semiconductor nanowire shell layer grows on the side wall of the semiconductor nanowire; and the superconductor layer is grown on the narrow-bandgap semiconductor nanowire shell layer.
Optionally, the narrow-bandgap semiconductor nanowire shell layer and the superconductor layer form a narrow-bandgap semiconductor/superconductor heterojunction, and an interface of the narrow-bandgap semiconductor/superconductor heterojunction is atomically flat.
Optionally, the semiconductor nanowires are perpendicular to the substrate surface.
Optionally, the diameter and length of the semiconductor nanowire are in the nanometer scale, and the thicknesses of the narrow bandgap semiconductor nanowire shell layer and the superconductor layer are in the nanometer scale.
Optionally, the material of the semiconductor nanowire comprises one of compound semiconductors InAs, GaAs, InP, GaP and GaSb, and the material of the narrow GaP semiconductor shell layer comprises compound semiconductors InAs, InSb and InAs1-xSbx(0 < x < 1), the material of the superconductor includes one of an element superconductor, an alloy superconductor and a compound superconductor.
According to the preparation method of the narrow-bandgap semiconductor/superconductor heterojunction nanowire, the semiconductor nanowire is grown on the surface of the substrate, the growth direction and the size of the nanowire are good in controllability, and subsequent device processing is easy to achieve; the semiconductor nanowire is taken as an inner core, and a narrow-bandgap semiconductor nanowire shell layer is epitaxially grown in situ along the radial direction of the semiconductor nanowire, so that stress caused by lattice mismatch between the substrate and the narrow-bandgap semiconductor nanowire shell layer can be released, and the narrow-bandgap semiconductor is ensured to have high crystal quality; the narrow-bandgap semiconductor shell layer and the superconductor are obtained by in-situ epitaxy, so that the narrow-bandgap semiconductor/superconductor heterojunction also has high crystal quality, and the interface of the narrow-bandgap semiconductor/superconductor heterojunction is atomically flat. In addition, the heterojunction nanowire grows perpendicular to the substrate and has controllable density, so that the mass production of the vertical semiconductor/superconductor heterojunction nanowire is easy to realize, and the material and device processing cost can be greatly saved.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a growth schematic diagram of a semiconductor nanowire provided according to an embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
Fig. 1 schematically illustrates a growth schematic diagram of a narrow bandgap semiconductor/superconductor heterojunction nanowire provided according to an embodiment of the present disclosure, and a method for preparing the narrow bandgap semiconductor/superconductor heterojunction nanowire provided in the present disclosure in conjunction with fig. 1 will be described below.
The preparation method of the narrow bandgap semiconductor/superconductor heterojunction nanowire provided by the disclosure comprises the steps of S1-S4.
S1, the substrate 10 is placed in the preparation apparatus.
The material of the substrate 10 may include, but is not limited to, semiconductors (e.g., Si, GaAs, etc.), metals (e.g., Mo, etc.), oxides (e.g., Al), etc., according to the practical requirements2O3Etc.).
In the embodiment of the disclosure, each structural component of the narrow bandgap semiconductor/superconductor heterojunction nanowire is prepared by epitaxial growth, and the preparation method is molecular beam epitaxy and chemical beam epitaxy. The molecular beam epitaxy and the chemical beam epitaxy have extremely high vacuum growth environment, and are necessary methods for preparing high-quality narrow-bandgap semiconductor/superconductor heterojunction nanowires.
S2, growing the semiconductor nanowire 11 on the surface of the substrate 10.
The semiconductor nanowire 11 is grown perpendicular to the surface of the substrate 10.
As shown in fig. 1, the semiconductor nanowire 11 is perpendicular to the surface of the substrate 10, and the semiconductor nanowire 11 is used as a growth carrier of the narrow bandgap semiconductor shell, determines the extending direction of the narrow bandgap semiconductor/superconductor heterojunction nanowire, and is a precondition and a basis for preparing a high-quality narrow bandgap semiconductor shell. The semiconductor nanowires 11 are perpendicular to the surface of the substrate 10, so that when high-density semiconductor nanowires 11 or narrow-bandgap semiconductor/superconductor heterojunction nanowires are grown on the same substrate 10, the directions of the semiconductor nanowires 11 or narrow-bandgap semiconductor/superconductor heterojunction nanowires are consistent, and the semiconductor nanowires 11 or narrow-bandgap semiconductor/superconductor heterojunction nanowires do not intersect or fuse with each other in the growth process, and are independent and do not affect each other.
Alternatively, the material for fabricating the semiconductor nanowire 11 may include a compound semiconductor, for example, one of InAs, GaAs, InP, GaP, InSb, or GaSb, but is not limited thereto.
The semiconductor nanowire 11 is grown to have a diameter and length of the order of nanometers. Specifically, the diameter of the semiconductor nanowire 11 may be several nanometers to several hundred nanometers, and the length may be on the order of nanometers to micrometers or more.
Alternatively, the manner of growing the semiconductor nanowire 11 on the surface of the substrate 10 is not limited to the epitaxial growth, and other similar means may be used.
And S3, taking the semiconductor nanowire 11 as an inner core, and epitaxially growing a narrow-bandgap semiconductor nanowire shell layer 12 on the side wall of the semiconductor nanowire 11 in situ.
Referring to fig. 1, a narrow band gap semiconductor nanowire shell layer 12 grows on a sidewall of a semiconductor nanowire 11 along a radial direction of the semiconductor nanowire 11 in an in-situ epitaxial growth manner, and the semiconductor nanowire 11 is wrapped by the narrow band gap semiconductor nanowire shell layer 12 as an inner core. The narrow-bandgap semiconductor nanowire shell layer 12 is in-situ epitaxial on the semiconductor nanowire 11, so that stress caused by lattice mismatch between the semiconductor nanowire 11 and the narrow-bandgap semiconductor nanowire shell layer 12 can be released, and the narrow-bandgap semiconductor is ensured to have high crystal quality. The high-quality narrow-bandgap semiconductor nanowire shell layer 12 is the key to obtain the high-quality narrow-bandgap semiconductor/superconductor heterojunction nanowire with the heterojunction interface reaching the atomic level flatness.
Alternatively, materials for fabricating the narrow bandgap semiconductor shell layer 12 may include, but are not limited to, compound semiconductors such as InAs, InSb, and InAs1-xSbx(x is more than 0 and less than 1), and the like.
And S4, epitaxially growing a superconductor layer 13 on the surface of the narrow-bandgap semiconductor nanowire shell layer 12 in situ.
Referring to fig. 1, the superconductor layer 13 is epitaxially grown in situ on the surface of the narrow bandgap semiconductor nanowire shell 12, thereby forming a narrow bandgap semiconductor/superconductor heterojunction nanowire composed of three layers, i.e., a semiconductor nanowire 11, the narrow bandgap semiconductor nanowire shell 12, and the superconductor layer 13. The superconductor is in-situ epitaxial on the narrow-bandgap semiconductor nanowire shell layer 12, so that stress caused by lattice mismatch between materials of the narrow-bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13 can be effectively released, and a high-quality semiconductor/superconductor heterojunction is guaranteed to be obtained.
Alternatively, the material for preparing the superconductor layer 13 may include one of an elemental superconductor, an alloy superconductor, and a compound superconductor, but is not limited thereto,
in the embodiment of the present disclosure, the material for preparing the semiconductor nanowire 11 includes one of compound semiconductors InAs, GaAs, InP, GaP, and GaSb, and the material for preparing the narrow bandgap semiconductor shell layer 12 includes compound semiconductors InAs, InSb, and InAs1-xSbxAnd (x is more than 0 and less than 1), the material for preparing the superconductor 13 comprises one of an element superconductor, an alloy superconductor and a compound superconductor, and the high-quality material meeting the requirement of the detection of the Majorana bound state can be prepared by matching the three materials and combining the growth mode of the core shell.
It should be noted that the narrow bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13 are grown in a high vacuum environment, which can prevent the semiconductor nanowire 11, the narrow bandgap semiconductor nanowire shell layer 12, and the superconductor layer 13 from being oxidized and contaminated during the growth process, resulting in the unevenness of the growth surface and the heterojunction interface.
The method for in-situ epitaxial growth of the narrow-bandgap semiconductor nanowire shell layer 12 on the sidewall of the semiconductor nanowire 11 and the method for in-situ epitaxial growth of the superconductor layer 13 on the surface of the narrow-bandgap semiconductor nanowire shell layer 12 include molecular beam epitaxy and chemical beam epitaxy. In the process of growing the narrow bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13, the narrow bandgap semiconductor nanowire shell layer 12 is in-situ epitaxial on the side wall of the semiconductor nanowire 11; the superconductor layer 13 is in-situ epitaxial on the side wall of the narrow-bandgap semiconductor nanowire shell layer 12. The in-situ epitaxy is that a sample is not moved out of a high-vacuum growth chamber in the whole growth process, so that the surface of the semiconductor nanowire 11 and the surface of the narrow-bandgap semiconductor nanowire shell layer 12 can be prevented from being oxidized and contaminated due to air contact, the high-quality narrow-bandgap semiconductor nanowire shell layer 12 and the high-quality superconductor layer 13 are ensured to be obtained, and the interface of the narrow-bandgap semiconductor nanowire shell layer 12 and the superconductor 13 is ensured to be flat at an atomic level.
The growth thickness of the narrow-gap semiconductor nanowire shell layer 12 and the superconductor layer 13 is in a nanometer level. In practical applications, the thicknesses of the narrow-bandgap semiconductor nanowire shell 12 and the superconductor layer 13 can be controlled to be between several nanometers and several hundred nanometers, and are not limited to the order of micrometers or more.
Example one
The following takes GaAs/InSb/Al heterojunction nanowire as an example to specifically explain a method for preparing a narrow bandgap semiconductor/superconductor heterojunction nanowire provided by the present disclosure.
In this embodiment, the substrate 10 is made of GaAs, the semiconductor nanowire 11 is made of the same material as the substrate 10, the narrow bandgap semiconductor nanowire shell layer 12 is made of InSb, the superconductor layer 13 is made of Al, and the GaAs/InSb/a1 heterojunction nanowire is prepared by a molecular beam epitaxy method.
First, the GaAs substrate 10 is set in a molecular beam epitaxy apparatus.
Then, the GaAs semiconductor nanowire 11 is grown without catalysis on the GaAs substrate 10. Wherein the growth temperature of the GaAs semiconductor nanowire 11 is 680-750 ℃, the As/Ga beam current ratio is 5-30, and the GaAs semiconductor nanowire is adjusted by molecular beam epitaxy equipment. When the growth of the GaAs semiconductor nanowire 11 is finished, the diameter of the GaAs semiconductor nanowire 11 is several nanometers to about 100 nanometers.
And secondly, adjusting and maintaining the temperature of the substrate 10 at 400-500 ℃, setting the Sb/In beam ratio to be 10-80, switching the molecular beam epitaxy equipment from a Ga source to an In source, switching an As source to an Sb source, and growing an InSb narrow bandgap semiconductor nanowire shell layer 12 on the surface of the GaAs semiconductor nanowire 11 along the radial direction.
And finally, reducing the temperature of the substrate 10 to 77K-273K, epitaxially growing a superconducting metal Al on the InSb narrow bandgap semiconductor nanowire shell layer 12 to form an Al superconductor layer 13, and obtaining the GaAs/InSb/A1 heterojunction nanowire to finish the preparation.
In the process, the interior of the molecular beam epitaxy equipment cavity is in a high vacuum state, and all the growth processes of the sample are carried out in situ in the high vacuum state.
It can be understood that, according to the selection of the materials for preparing the substrate 10, the semiconductor nanowire 11, the narrow bandgap semiconductor nanowire shell layer 12, and the superconductor layer 13, the growth conditions such as the growth temperature set for preparing each of the above structures should be adjusted accordingly.
The present disclosure also provides a narrow bandgap semiconductor/superconductor heterojunction nanowire, comprising: a semiconductor nanowire 11 grown on the substrate 10; a narrow bandgap semiconductor nanowire shell layer 12, which takes the semiconductor nanowire 11 as an inner core and grows on the side wall of the semiconductor nanowire 11; and the superconductor layer 13 is grown on the narrow-bandgap semiconductor nanowire shell layer 12.
Specifically, referring to fig. 1, a semiconductor nanowire 11 is grown on a substrate 10, a narrow bandgap semiconductor nanowire shell 12 is epitaxially grown on the semiconductor nanowire 11, and a superconductor layer 13 is epitaxially grown on the narrow bandgap semiconductor nanowire shell 12.
In the embodiment of the present disclosure, the material for preparing the semiconductor nanowire 11 includes one of compound semiconductors InAs, GaAs, InP, GaP, and GaSb, and the material for preparing the narrow bandgap semiconductor shell layer 12 includes compound semiconductors InAs, InSb, and InAs1-xSbxAnd (0 < x < 1), the material for preparing the superconductor 13 comprises one of an element superconductor, an alloy superconductor and a compound superconductor, and by adopting the growth mode of the core-shell, the stress caused by lattice mismatch between the semiconductor and the semiconductor (between the semiconductor nanowire 11 and the narrow-bandgap semiconductor nanowire shell 12) and between the semiconductor and the superconductor (between the narrow-bandgap semiconductor nanowire shell 12 and the superconductor layer 13) can be effectively released, and the crystal quality of the narrow-bandgap semiconductor 12 and the superconductor 13 can be effectively improved.
The interface of the narrow-bandgap semiconductor/superconductor heterojunction formed by the narrow-bandgap semiconductor nanowire shell 12 and the superconductor layer 13 is atomically flat. According to the preparation method of the narrow-bandgap semiconductor/superconductor heterojunction nanowire provided by the disclosure, the narrow-bandgap semiconductor/superconductor heterojunction nanowire is prepared under high vacuum in the preparation process, and the narrow-bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13 grow under the high vacuum state, so that the surface of the semiconductor nanowire 11 is prevented from being damaged and destroyed, and the heterojunction interface formed by the narrow-bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13 is ensured to be flat at an atomic level.
The semiconductor nanowires 11 are perpendicular to the surface of the substrate 10, so that when high-density narrow-bandgap semiconductor/superconductor heterojunction nanowires are grown on the same substrate 10, the directions of the nanowires are consistent, and the nanowires do not intersect or fuse with each other in the growth process, and are independent from each other and do not affect each other.
In the disclosed embodiment, the diameter and length of the semiconductor nanowire 11 are on the order of nanometers. The thicknesses of the narrow-bandgap semiconductor nanowire shell layer 12 and the superconductor layer 13 are both in the nanometer range.
Specifically, other relevant features of the narrow bandgap semiconductor/superconductor heterojunction nanowire provided in the embodiments of the present disclosure have been described in the foregoing methods, and are not described herein again.
The narrow-bandgap semiconductor/superconductor heterojunction nanowire provided by the embodiment of the disclosure can break through the limitation of lattice mismatch, the in-situ epitaxial narrow-bandgap semiconductor/superconductor heterojunction interface can reach atomic level flatness, and the narrow-bandgap semiconductor/superconductor heterojunction nanowire also has the advantages of good controllability of direction and size, and the like, is easy for subsequent device processing, can realize mass production, and greatly saves the material and device processing cost.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.

Claims (10)

1. A preparation method of a narrow-bandgap semiconductor/superconductor heterojunction nanowire is characterized by comprising the following steps:
placing a substrate (10) in a preparation apparatus;
growing a semiconductor nanowire (11) on the surface of the substrate (10);
taking the semiconductor nanowire (11) as an inner core, and epitaxially growing a narrow-bandgap semiconductor nanowire shell layer (12) on the side wall of the semiconductor nanowire (11) in situ;
and epitaxially growing a superconductor layer (13) on the surface of the narrow-bandgap semiconductor nanowire shell layer (12) in situ.
2. The method of manufacturing according to claim 1, characterized in that the semiconductor nanowires (11) are grown perpendicular to the substrate (10) surface.
3. The method according to claim 1, wherein the narrow bandgap semiconductor nanowire shell layer (12) and the superconductor layer (13) are grown in a high vacuum environment.
4. The method of manufacturing according to claim 3, wherein the in-situ epitaxial growth of the narrow-bandgap semiconductor nanowire shell layer (12) on the sidewalls of the semiconductor nanowire (11), and wherein the in-situ epitaxial growth of the superconductor layer (13) on the surface of the narrow-bandgap semiconductor nanowire shell layer (12) comprises molecular beam epitaxy and chemical beam epitaxy.
5. The method according to claim 1, wherein the semiconductor nanowire (11) is made of a material comprising one of compound semiconductors InAs, GaAs, InP, GaP, GaSb, and the narrow bandgap semiconductor shell layer (12) is made of a material comprising compound semiconductors InAs, InSb, and InAs1-xSbx(0 < x < 1), and the material for producing the superconductor (13) includes one of an elemental superconductor, an alloy superconductor, and a compound superconductor.
6. A narrow bandgap semiconductor/superconductor heterojunction nanowire, comprising:
a semiconductor nanowire (11) grown on a substrate (10);
a narrow-bandgap semiconductor nanowire shell layer (12) which takes the semiconductor nanowire (11) as an inner core and is epitaxially grown on the side wall of the semiconductor nanowire (11);
and the superconductor layer (13) is epitaxially grown on the narrow-bandgap semiconductor nanowire shell layer (12).
7. The narrow-bandgap semiconductor/superconductor heterojunction nanowire according to claim 6, wherein the narrow-bandgap semiconductor nanowire shell layer (12) and the superconductor layer (13) form a narrow-bandgap semiconductor/superconductor heterojunction, and the interface of the narrow-bandgap semiconductor/superconductor heterojunction is atomically flat.
8. The narrow bandgap semiconductor/superconductor heterojunction nanowire according to claim 6, wherein the semiconductor nanowire (11) is perpendicular to the substrate (10) surface.
9. The narrow-bandgap semiconductor/superconductor heterojunction nanowire according to claim 6, wherein the diameter and length of the semiconductor nanowire (11) are on the order of nanometers, and the thickness of the narrow-bandgap semiconductor nanowire shell layer (12) and the superconductor layer (13) are on the order of nanometers.
10. The narrow bandgap semiconductor/superconductor heterojunction nanowire of claim 6, wherein the material of the semiconductor nanowire (11) comprises one of compound semiconductors InAs, GaAs, InP, GaP, GaSb, and the material of the narrow bandgap semiconductor shell layer (12) comprises compound semiconductors InAs, InSb, and InAs1-xSbx(0 < x < 1), and the material of the superconductor (13) includes one of an element superconductor, an alloy superconductor, and a compound superconductor.
CN202010672178.6A 2020-07-13 2020-07-13 Preparation method of narrow-bandgap semiconductor/superconductor heterojunction nanowire Pending CN111762755A (en)

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