CN111740005A - High-temperature polarization method for piezoelectric film - Google Patents

High-temperature polarization method for piezoelectric film Download PDF

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CN111740005A
CN111740005A CN202010553392.XA CN202010553392A CN111740005A CN 111740005 A CN111740005 A CN 111740005A CN 202010553392 A CN202010553392 A CN 202010553392A CN 111740005 A CN111740005 A CN 111740005A
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change material
piezoelectric
temperature
substrate
phase change
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CN111740005B (en
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黄凯
欧欣
赵晓蒙
李忠旭
陈阳
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Shanghai Xinsi Polymer Semiconductor Co ltd
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
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    • H10N30/00—Piezoelectric or electrostrictive devices
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Abstract

The invention relates to a high-temperature polarization method of a piezoelectric film, which comprises the following steps: preparing a composite structure of the piezoelectric film, the thermotropic phase change material and the support substrate; then, carrying out high-temperature annealing on the composite structure, and applying a polarization electric field on the piezoelectric film by taking the thermotropic phase change material as a bottom electrode; and finally, carrying out surface treatment on the polarized piezoelectric film. According to the invention, by introducing the phase-change material, on one hand, the phase-change material is metallized at the annealing temperature and is used as a bottom electrode to apply polarization voltage, so that the polarization consistency of the piezoelectric film can be improved; on the other hand, the phase-change material is insulated at the working temperature of the device and can be used as a high-resistance isolation layer to improve the radio-frequency performance of the piezoelectric device.

Description

High-temperature polarization method for piezoelectric film
Technical Field
The invention belongs to the field of electronic components, and particularly relates to a high-temperature polarization method for a piezoelectric film.
Background
With the development of 5G technology, the market of radio frequency front end modules of mobile communication terminals has rapidly increased. Acoustic wave filters based on surface acoustic wave and bulk acoustic wave technologies have become the fastest growing electronic components in radio frequency front end modules. However, with the release of new frequency bands and the application of Carrier Aggregation (CA) and Multiple Input Multiple Output (MIMO) technologies, the market places more demands on the size, power consumption, power, operating frequency, bandwidth, stability, and the like of the acoustic wave filter. Therefore, on the basis of the traditional acoustic wave filter based on the piezoelectric single crystal substrate, researchers adopt a heterogeneous composite substrate to improve the performance of the device and develop a novel working mode. However, at present, heterogeneous composite substrates for high-performance surface acoustic wave filters are prepared by ion beam stripping technology, and the prepared thin films have a large number of implantation defects, so that the piezoelectric thin films are multi-domain. In order to recover the defects, high-temperature annealing is generally adopted for defect recovery, however, the coercive electric field of the piezoelectric material is reduced along with the increase of the temperature, and multiple piezoelectric domains are easily generated due to the existence of a disturbing electric field in the annealing process. In addition, the traditional polarization method is easy to introduce the problems of air breakdown or uneven polarization of electrode contact points and the like.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a piezoelectric film high-temperature polarization method, which is characterized in that a phase-change material is introduced, on one hand, the phase-change material is metalized at an annealing temperature and is used as a bottom electrode to apply polarization voltage, so that the polarization consistency of the piezoelectric film can be improved; on the other hand, the phase-change material is insulated at the working temperature of the device and can be used as a high-resistance isolation layer to improve the radio-frequency performance of the piezoelectric device.
The invention provides a high-temperature polarization method of a piezoelectric film, which comprises the following steps:
preparing a composite structure of the piezoelectric film, the thermotropic phase change material and the supporting substrate by using an ion implantation and heterogeneous bonding process; then, carrying out high-temperature annealing on the composite structure, and applying a polarization electric field on the piezoelectric film by taking the thermotropic phase change material as a bottom electrode; and finally, carrying out surface treatment on the polarized piezoelectric film.
The piezoelectric film is a lithium niobate or lithium tantalate film.
The metal/insulation transition temperature of the thermotropic phase change material is more than 70 ℃; the polarization temperature is between the metal/insulation transition temperature and 0.8 Tc; the resistivity of the insulating phase is more than 1000 omega cm. The required transition temperature (Tc is the Curie temperature of the piezoelectric film) is more than 70 ℃, and the phase-change material can be ensured to keep an insulating phase, namely a high-resistance state at the normal working temperature of the device. The phase transition temperature of part of the material is lower than 70 ℃, and the phase transition temperature can be regulated and controlled by adopting ion doping, strain doping, hole regulation and the like.
The support substrate is made of silicon, sapphire and SiO2One or more of a/Si composite substrate, SiC, GaN and AlN.
The ion implantation and heterogeneous bonding process comprises the steps of firstly growing a thermotropic phase change material (such as magnetron sputtering, PLD, ALD and the like) on the surface of a piezoelectric substrate, then implanting ions into the piezoelectric substrate, finally bonding a support substrate and the piezoelectric substrate, or firstly implanting ions into the piezoelectric substrate, then growing the thermotropic phase change material on the surface of the piezoelectric substrate, and finally bonding the support substrate and the piezoelectric substrate.
A stop layer is grown in advance before the thermotropic phase change material is grown on the surface of the piezoelectric substrate. The cut-off layer is SiO2Although the phase change material is not in contact with the piezoelectric substrate at this time, polarization may be performed by an electric field.
The high-temperature annealing temperature is 0.3-1.2 Tc.
The intensity of the polarized electric field is larger than the coercive electric field of the thermotropic phase change material, and the polarization time is larger than 1 s.
For a radio frequency filter, metal structures such as interdigital electrodes, bus lines and contact electrode plates are formed on the upper surface of the piezoelectric film. If the material under the piezoelectric film layer is a low-resistance material, the low-resistance material can play a role of an electrode, and the low-resistance material, the metal structure on the surface of the piezoelectric film and the piezoelectric film form a capacitor structure to influence the performance of the radio frequency filter.
The phase-change material can be used as a high-resistance isolation layer to improve the radio-frequency performance of the piezoelectric device.
Figure 2 shows the effect of high and low resistivity on the resonant performance of the device, comparing two materials with resistivity of 1e5ohm cm and 0.05ohm cm respectively. The resonance frequency points of the high-resistance substrate and the low-resistance substrate are close to each other and are positioned at about fr 2010 MHz. However, the anti-resonance point of the low-resistance substrate is located at fa of 2198MHz, and the anti-resonance point of the high-resistance substrate is located at fa of 2284 MHz. According to a calculation formula
Figure BDA0002543311470000021
Calculating the electromechanical coupling coefficient of resonance performance, kt of high-resistance substrate235.6%, kt of low-resistance substrate224.7%. The electromechanical coupling coefficient directly influences the relative bandwidth of the resonator, and the read bandwidth of the high-resistance substrate is superior to that of the low-resistance substrate.
Advantageous effects
According to the invention, by introducing the phase-change material, on one hand, the phase-change material is metallized at the annealing temperature and is used as a bottom electrode to apply polarization voltage, so that the polarization consistency of the piezoelectric film can be improved; on the other hand, the phase-change material is insulated at the working temperature of the device and can be used as a high-resistance isolation layer to improve the radio-frequency performance of the piezoelectric device.
Drawings
FIG. 1 is a schematic diagram of the introduction of phase change materials in accordance with the present invention.
Fig. 2 is a graph showing the effect of high and low resistance materials on the resonant performance of the device.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Example 1
(1) Firstly, a thermotropic phase change material such as VO is grown on the surface of a supporting substrate2Or TiO2(growth method such as magnetron sputtering, PLD, ALD, etc.), then implanting ions such as H ions into the piezoelectric substrate, and bringing the support substrate into contact with pressureBonding the electric thin film and annealing and stripping the piezoelectric material to obtain a composite structure of the piezoelectric thin film, the thermotropic phase change material and the silicon substrate; wherein [3D Local structural of the Metal-Insulator transformation in VO2Thin Film by Defect-InducedLattice Engineering]It is stated that VO increases with temperature2The sheet resistance is reduced from 10^5 to 10^1 by changing from the insulating state to the metal state;
(2) and (3) carrying out high-temperature annealing on the composite structure, wherein the high-temperature annealing temperature is 1.1Tc, so that the bonding strength between the piezoelectric film and the support substrate is enhanced on one hand, and the residual defects of ion implantation can be recovered on the other hand. Theoretically, the higher the temperature, the stronger the bond strength and the better the residual defect recovery. When the temperature exceeds the Curie temperature of the piezoelectric material, the piezoelectric material is changed from ferroelectric to paraelectric, and the piezoelectric performance is lost; with the increase of the temperature, the coercive electric field of the piezoelectric material is reduced, and the polarization of the piezoelectric material is easily influenced by an external electric field;
(3) the thermotropic phase change material is used as a bottom electrode, a polarization electric field is applied to the piezoelectric film, so that the piezoelectric film is polarized, the polarization temperature at the moment is higher than the MIT (Metal-Insulator transition) temperature of the thermotropic phase change material, and the piezoelectric material used as the bottom electrode has small resistivity and high efficiency;
(4) and finally, carrying out surface treatment on the polarized piezoelectric film to remove surface metal.
Example 2
(1) Firstly growing SiO of cut-off layer on the surface of lithium niobate piezoelectric film in advance2Then, thermally induced phase change material is grown again (growth method such as magnetron sputtering, PLD, ALD and the like), ions are implanted into the piezoelectric substrate, the piezoelectric substrate and the supporting substrate are bonded and annealed and peeled off to obtain a piezoelectric film and SiO2The thermotropic phase change material and the silicon substrate are in a composite structure;
(2) carrying out high-temperature annealing on the composite structure, wherein the high-temperature annealing temperature is 0.5 Tc;
(3) the thermotropic phase change material is used as a bottom electrode, and a polarization electric field is applied to the piezoelectric film, so that the piezoelectric film is polarized; since the polarization is the coercive field, at the bottomSiO is inserted between the electrode phase-change material and the piezoelectric film2After the layer, exert the electric field between bottom electrode and surface electrode and still can play the polarization, efficiency can reduce, but can do benefit to the performance promotion of device normal work.
(4) And finally, carrying out surface treatment on the polarized piezoelectric film to remove surface metal.
Example 3
In this embodiment, a silicon substrate is doped to change silicon into a thermotropic phase change material.
Growing SiO on the surface of a silicon substrate by thermal oxidation or film deposition (CVD or magnetron sputtering)2And implanting Te ions into the silicon substrate to convert the silicon layer containing Te component into phase change material. The piezoelectric film is then transferred to silicon/Te-containing silicon/SiO by ion beam lift-off2The material is formed on a support substrate. Annealing, polarization, and surface treatment were performed according to example 1.
Example 4
This example is for LiNbO3Doping is performed to convert the LN underlayer portion to a phase change material.
(1) Preparation of LN/SiO according to the Normal procedure of ion Beam stripping2The structure of the silicon-aluminum alloy/Si,
(2) implanting an element such as (CoFeB) into the LN thin film to form a CoFeB-containing LN layer located on the LN/SiO thin film2Composition of 1/4, CoFeB, in the upper part of the interface, with a thickness not exceeding the LN thickness<50 percent. Form LN/(CoFeB) LN/SiO2a/Si structure in which the (CoFeB) LN layer is a phase change material.
(3) Annealing, polarization, and surface treatment were performed according to example 1.

Claims (10)

1. A piezoelectric thin film high temperature polarization method comprises:
preparing a composite structure of the piezoelectric film, the thermotropic phase change material and the supporting substrate by using an ion implantation and heterogeneous bonding process; then, carrying out high-temperature annealing on the composite structure, taking the thermotropic phase change material as a bottom electrode, and applying a polarization electric field on the piezoelectric film; and finally, carrying out surface treatment on the polarized piezoelectric film.
2. The method of claim 1, wherein: the piezoelectric film is a lithium niobate or lithium tantalate film.
3. The method of claim 1, wherein: the metal/insulation transition temperature of the thermotropic phase change material is more than 70 ℃; the polarization temperature is between the metal/insulation transition temperature and 0.8 Tc; the resistivity of the insulating phase is more than 1000 omega cm.
4. The method of claim 1, wherein: the support substrate is made of silicon, sapphire and SiO2One or more of a/Si composite substrate, SiC, GaN and AlN.
5. The method of claim 1, wherein: the ion implantation and heterogeneous bonding process comprises the steps of firstly growing a thermotropic phase change material on the surface of a piezoelectric substrate, then implanting ions into the piezoelectric substrate, finally bonding a support substrate and the piezoelectric substrate, or firstly implanting ions into the piezoelectric substrate, then growing the thermotropic phase change material on the surface of the piezoelectric substrate, and finally bonding the support substrate and the piezoelectric substrate.
6. The method of claim 5, wherein: a stop layer is grown in advance before the thermotropic phase change material is grown on the surface of the piezoelectric substrate.
7. The method of claim 6, wherein: the cut-off layer is SiO2。
8. The method of claim 1, wherein: the high-temperature annealing temperature is 0.3-1.2 Tc.
9. The method of claim 1, wherein: the surface treatment is to remove surface metal.
10. The method of claim 1, wherein: the intensity of the polarized electric field is larger than the coercive electric field of the thermotropic phase change material, and the polarization time is larger than 1 s.
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CN113314346A (en) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 Variable capacitance capacitor
CN114277443A (en) * 2021-12-28 2022-04-05 中国科学院苏州纳米技术与纳米仿生研究所 Nitride single crystal film, and preparation method and application thereof

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CN113314346A (en) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 Variable capacitance capacitor
CN114277443A (en) * 2021-12-28 2022-04-05 中国科学院苏州纳米技术与纳米仿生研究所 Nitride single crystal film, and preparation method and application thereof

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