CN111739846B - Power module and power device - Google Patents
Power module and power device Download PDFInfo
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- CN111739846B CN111739846B CN202010470288.4A CN202010470288A CN111739846B CN 111739846 B CN111739846 B CN 111739846B CN 202010470288 A CN202010470288 A CN 202010470288A CN 111739846 B CN111739846 B CN 111739846B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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Abstract
The invention discloses a power module, which comprises at least two module substrates, a plurality of power chips, a plurality of module connecting sheets and a packaging layer, wherein the module connecting sheets are arranged on the module substrates; a mounting gap is formed between any two adjacent module substrates; any one of the plurality of power chips is arranged in the mounting gap; any one of the plurality of power chips is provided with at least two electrodes; at least one electrode on any one of the power chips is electrically connected with the module substrate based on the corresponding module connecting sheet; the packaging layer is used for packaging the at least two module substrates, the plurality of power chips and the module connecting sheet, and connecting pins corresponding to the at least two module substrates and the plurality of power chips are arranged on the surface of the packaging layer. The power module provides a novel multi-layer board module packaging structure, and is low in manufacturing cost and high in processing yield. In addition, the invention also provides a power device.
Description
Technical Field
The invention relates to the field of electronic devices, in particular to a power module and a power device.
Background
Fig. 1 is a schematic structural diagram of a power device in the prior art. The power device is a semiconductor device with voltage and current processing capacity, and a plurality of power chips are arranged inside the power device. Along with the requirements of miniaturization and integration of the power device, a device structure of a double-layer metal plate is generally adopted, the power chip is arranged between the two metal plates, the external electrical connection function of the power chip is realized by utilizing the two metal plates, and meanwhile, the double-layer metal plate is utilized to dissipate heat of the power chip.
Specifically, the power chip mainly comprises a diode and a switching tube, and the switching tube is provided with three electrodes. When the power device adopts a routing-free sintering structure, the electrodes on the upper surface and the lower surface of the power chip are all subjected to die bonding in a full sintering mode. For the switching tube, due to the fact that the distance between the grid electrode and the source electrode is small, the amount of silver paste on the grid electrode and the source electrode is difficult to control, the sintering process is difficult, the phenomenon of grid source electrode short circuit is prone to occurring, and the product yield is low.
Disclosure of Invention
In order to solve the problem of the conventional power device, the invention provides a power module and a power device.
Correspondingly, the invention provides a power module which comprises at least two module substrates, a plurality of power chips, a plurality of module connecting sheets and a packaging layer;
the at least two module substrates are arranged in a stacked mode, and a mounting gap is formed between any two adjacent module substrates; any one of the plurality of power chips is arranged in the mounting gap; any one of the plurality of power chips has at least two electrodes;
two ends of any module connecting sheet in the plurality of module connecting sheets in a first fixing direction are respectively a first module connecting end and a second module connecting end, and the middle part of the module connecting sheet in the first fixing direction protrudes relative to the first module connecting end and the second module connecting end to form a module elastic contact;
at least one electrode on any one of the plurality of power chips is electrically connected with the module substrate based on the corresponding module connecting sheet;
the packaging layer is used for packaging the at least two module substrates, the plurality of power chips and the module connecting sheet, and connecting pins corresponding to the at least two module substrates and the plurality of power chips are arranged on the surface of the packaging layer.
In an optional implementation manner, the first module connecting end and the second module connecting end of at least one of the plurality of module connecting pieces are bonded to the corresponding electrodes, and the module elastic contact is in contact with the corresponding module substrate to form an electrical connection.
In an optional implementation manner, the first module connecting end and the second module connecting end of at least one of the plurality of module connecting pieces are bonded and arranged on the corresponding module substrate, and the module elastic contact is in contact with the corresponding electrode to form an electrical connection.
In an optional embodiment, at least a part of the plurality of power chips are diodes;
the electrodes of the diode comprise an anode and a cathode, and the anode and the cathode are respectively arranged on two opposite surfaces of the diode;
and the anode and/or the cathode of the diode are electrically connected with the corresponding module substrate based on the module connecting sheet.
In an optional embodiment, at least some of the power chips are switching tubes;
the electrode of the switching tube comprises a grid electrode, a source electrode and a drain electrode, wherein the grid electrode and the source electrode are arranged on one surface of the switching tube, and the drain electrode is arranged on the other opposite surface of the switching tube.
In an alternative embodiment, a part of the surface of any one of the at least two module substrates is exposed to the surface of the package layer to form the connection pins, or is led out to the surface of the package layer based on a module substrate extension structure to form the connection pins.
In an optional implementation manner, when the power chips include diodes, the anodes and the cathodes of the diodes are respectively electrically connected to the corresponding module substrates;
when the power chips comprise switch tubes, drain electrodes and source electrodes of the switch tubes are respectively electrically connected with the corresponding module substrates, and grid electrodes of the switch tubes are exposed out of the surface of the packaging layer to form the connecting pins or are led out of the surface of the packaging layer based on a grid electrode extending structure to form the connecting pins.
Correspondingly, the invention also provides a power device, which comprises a device top plate, a device bottom plate and a plurality of power modules;
the device top plate and the device bottom plate are arranged oppositely, a top plate connecting layer is arranged on one side, facing the device bottom plate, of the device top plate, and a bottom plate connecting layer is arranged on one side, facing the device top plate, of the device bottom plate;
the top plate connecting layer is divided into a plurality of top plate connecting areas, and the bottom plate connecting layer is divided into a plurality of bottom plate connecting areas;
any connecting pin on the power module is electrically connected with the corresponding top plate connecting area or the corresponding bottom plate connecting area.
In an optional embodiment, the device further comprises a plurality of device connecting sheets;
the two ends of the device connecting sheet in the second fixing direction are respectively a first device connecting end and a second device connecting end, and the middle part of the device connecting sheet in the second fixing direction protrudes relative to the first device connecting end and the second device connecting end to form a device elastic contact;
at least part of the connecting pins on the power module are electrically connected with the corresponding top plate connecting area or the corresponding bottom plate connecting area based on the corresponding device connecting sheet.
In an optional embodiment, the first device connection end and the second device connection end of at least one of the plurality of device connection pads are disposed on the corresponding connection pins, and the device elastic contact is in contact with the corresponding top board connection area or the corresponding bottom board connection area to form an electrical connection.
In an alternative embodiment, the first device connection end and the second device connection end of at least one of the plurality of device connection pads are disposed on the top board connection area or the bottom board connection area and the device elastic contact is in contact with the corresponding connection pin.
In an optional embodiment, the power device further includes a plurality of device connection regions, and the plurality of top plate connection regions and the plurality of bottom plate connection regions are respectively led out from a direction toward the outside of the power device based on corresponding device connection regions of the plurality of device connection regions.
In conclusion, the invention provides a power module and a power device, the power module provides a novel multi-layer board module packaging structure, the manufacturing cost is low, the processing yield is high, and the use is convenient; the power device can adopt different numbers of power modules according to requirements, and the power device is simple in assembly process and convenient to actually process and use.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a power device in the prior art;
fig. 2 is a schematic structural diagram of a power device according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a diode according to a first embodiment of the invention;
FIG. 4 is a schematic diagram of a switch tube structure according to a first embodiment of the present invention;
FIG. 5 is a cross-sectional view of a module connecting piece according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first embodiment of a module connecting piece according to a first embodiment of the invention.
Fig. 7 is a schematic diagram of a partially enlarged structure of a power device according to a second embodiment of the present invention;
fig. 8 is a schematic circuit diagram of a half-bridge inverter type power conversion circuit in the prior art;
fig. 9 is a schematic circuit diagram of a full-bridge inverter power conversion circuit in the prior art;
fig. 10 is a schematic view of a connection structure of a power device according to a second embodiment of the present invention;
fig. 11 is a schematic three-dimensional structure diagram of a power device according to a third embodiment of the present invention;
fig. 12 is a schematic diagram of a device backplane structure of a power device according to a third embodiment of the present invention;
fig. 13 is a schematic diagram of a top plate structure of a power device according to a third embodiment of the present invention;
fig. 14 is a schematic three-dimensional structure diagram of a power device according to a fourth embodiment of the present invention;
fig. 15 is a schematic diagram of a top plate structure of a power device according to a fourth embodiment of the present invention;
fig. 16 is a schematic diagram of a device backplane structure of a power device according to a fourth embodiment of the present invention;
fig. 17 is a partially enlarged schematic view of a power device structure according to a fifth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
fig. 2 is a schematic structural diagram of a power device according to an embodiment of the present invention, and it should be noted that, for clarity, hatching lines are not shown in fig. 2 of the accompanying drawings. The embodiment of the invention provides a power module, which comprises at least two module substrates (a first module substrate 101, a second module substrate 102 and a third module substrate 103), a plurality of power chips (a first power chip 201, a second power chip 202, a third power chip 203 and a fourth power chip 204), module connecting sheets (a first module connecting sheet 401, a second module connecting sheet 402 and the module connecting sheets which are not marked) and a packaging layer 300.
Specifically, the at least two module substrates are stacked, and in the embodiment of the present invention, the first module substrate 101, the second module substrate 102, and the third module substrate 103 are sequentially stacked.
And a mounting gap is formed between any two module substrates of the at least two module substrates, and the mounting gap is used for mounting the power chip.
Specifically, any one of the plurality of power chips has at least two electrodes; common types of power chips are diodes or switching tubes.
Fig. 3 is a schematic diagram of a diode structure according to an embodiment of the invention. Specifically, the anode and the cathode of the diode are respectively arranged on two opposite surfaces of the diode.
Fig. 4 is a schematic diagram of a switch tube structure according to an embodiment of the invention. Specifically, the gate and the source of the switching tube are disposed on one surface of the switching tube, and the drain of the switching tube is disposed on the other opposite surface of the switching tube.
Specifically, any one of the plurality of power chips is disposed in a mounting gap between two adjacent module substrates of the at least two layers of module substrates, and at least one electrode on any one of the plurality of power chips is electrically connected to the module substrates based on the module connecting sheet.
Fig. 5 is a schematic cross-sectional view of a module connecting piece according to an embodiment of the invention. Specifically, the two ends of the module connecting piece in the first fixing direction (the direction of the view angle of the figure in the embodiment of the present invention is the first fixing direction) are respectively a first module connecting end 411 and a second module connecting end 412, and the middle of the module connecting piece in the first fixing direction protrudes relative to the first module connecting end 411 and the second module connecting end 412 to form a module elastic contact 413.
Specifically, when the module connecting piece is applied to the power module according to the embodiment of the present invention, there are two embodiments.
Specifically, the first module connecting terminal 411 and the second module connecting terminal 412 are bonded to the corresponding electrodes, and the module elastic contact 413 contacts with the corresponding module substrate to form an electrical connection (e.g., the second module connecting pad 402); alternatively, the first module connecting terminal 411 and the second module connecting terminal 412 are bonded to the corresponding module substrate, and the module elastic contact 413 contacts with the corresponding electrode to form an electrical connection (e.g., the first module connecting pad 401).
Specifically, the encapsulation layer 300 encapsulates the at least two module substrates, the plurality of power chips, and the module connecting sheet, and connection pins corresponding to the at least two module substrates and the plurality of power chips are disposed on the surface of the encapsulation layer.
Through the embodiment, the electrical connection relationship between the pins of the power chip and the module substrate can be realized based on a physical mechanism (module connecting sheet) with reliable connection, and compared with the traditional electrical connection mode of silver paste sintering, the electrical connection mode (module connecting sheet) provided by the embodiment of the invention has lower operation difficulty, and is particularly applied to a power module with a multi-layer plate structure.
Furthermore, in the power module of the embodiment of the invention, in the actual processing, the electrical connection between the electrodes of the power chips and the module substrates can be realized based on the module connecting sheets, and by the setting mode, in the processing, the relative positions of a plurality of module substrates are fixed firstly, then the module power chips are respectively placed in the corresponding positions (or the module substrates are arranged layer by layer and the corresponding power chips are arranged on the substrates layer by layer), and finally the required power module can be obtained by packaging with the packaging material, so that the processing is more convenient; meanwhile, the elastic contact 413 has certain deformation capacity, so that the connection between the electrode of the power chip and the module substrate has certain relative acting force, and the connection between the electrode of the power chip and the module substrate is more reliable; finally, all the structures are packaged into a module form based on packaging materials, and corresponding connecting pins are led out from the surface of the module, so that the whole body formed by the power chip and the module substrate can exist in the form of a power module, and the power module is convenient to use.
In order to facilitate external use of the power chip, the chip electrode and the module substrate in the power module need to be led out to the surface of the power module (the surface of the package layer) for external electrical connection.
The module connecting piece has a first module connecting end 411 and a second module connecting end 412 at two ends in a first fixing direction (the direction of the view angle of the figure in the embodiment of the present invention is the first fixing direction), and the middle of the module connecting piece in the first fixing direction protrudes relative to the first module connecting end and the second module connecting end to form a module elastic contact 413.
Fig. 6 is a schematic diagram of a first embodiment of a module connecting piece according to an embodiment of the invention. In one embodiment, the module connecting pads are first disposed at corresponding positions of the first module connecting terminal 411 and the second module connecting terminal 412, and then the module elastic contacts 413 are connected with the corresponding positions by contact. In a specific implementation, the first module connecting end 411 and the second module connecting end 412 may be disposed by using an ultrasonic welding process, and specifically, in order to adapt to the ultrasonic welding process, the first implementation structure of the module connecting sheet shown in fig. 6 is referred to, and in a specific implementation, the first module connecting end 411 and the second module connecting end 412 may be adaptively thickened; optionally, the thickness of the first module connecting end 411 or the second module connecting end 412 is generally not more than two thirds of the height of the module elastic contact 413, so as to ensure the quality of ultrasonic welding, and optionally, the height of the module elastic contact 413 is not more than 3 mm; optionally, the thickness of the first module connecting end 411 or the second module connecting end 412 is not more than one millimeter as far as possible so as to ensure the convenience of processing, optionally, the middle part of the first module connecting end and the middle part of the second module connecting end of the module connecting piece are protruded to form an arc-shaped protruding structure, optionally, the included angle between the arc-shaped structure and the horizontal direction is not more than 30 degrees so as to ensure the convenience of processing.
Besides the ultrasonic welding process, in specific implementation, the first module connecting end 411 or the second module connecting end 412 can be fixedly arranged in a nano-silver sintering mode; the nano silver sintering process can be completed in a relatively low-temperature environment, and the self structure of the module substrate or the power chip can be guaranteed not to be damaged. In a specific implementation, the thickness of the nano silver layer does not exceed the height of the module elastic contact 413, so as to avoid that the module elastic contact 413 does not deform in the contact process, and thus, sufficient deformation pressure cannot be provided, and the power chip is not fixed and fails.
In specific implementation, the size of the module connecting piece 8 needs to be designed adaptively according to the arrangement position. Because the power chip generates a large amount of heat during use, in the embodiment of the invention, the heat of the power chip needs to be conducted to the module substrate, and the heat dissipation function of the module substrate can be utilized to carry out rapid heat dissipation. Therefore, it is preferable that the first and second module connection terminals be disposed on the module substrate, and the metal contacts be in contact with the electrodes of the corresponding power chips, and then rapidly conduct heat to the module substrate using the first and second module connection terminals.
In the embodiment of the present invention, referring to the schematic diagram shown in fig. 2, for a module substrate, a part of the surface of any one of the at least two module substrates is exposed to the surface of the encapsulation layer to form the connection pins, such as the first module substrate 101 and the third module substrate 103. Based on the orientation shown in fig. 2, the bottom surface of the first module substrate 101 and the top surface of the third module substrate 103 are respectively exposed out of the encapsulation layer 300, and can be directly electrically connected to the outside during specific use; further, the first module substrate 101 is electrically connected to an electrode of the third power chip 203 (diode), and the first module substrate 101 is electrically connected to a drain of the fourth power chip 204 (switch tube), similarly, the source of the first power chip 201 and an electrode of the second power chip 202 are electrically connected to the third module substrate 103, respectively, and the first module substrate 101 and the third module substrate 103 actually have a function of leading out electrodes of the power chips.
Alternatively, any one of the at least two module substrates is led out to the surface of the package layer based on a module substrate extension structure to form the connection pins, such as the second module substrate 102. Based on the direction shown in fig. 2, the module substrate extension structure 110 corresponding to the second module substrate 102 is an oval labeled area, and in the embodiment of the invention, the second module substrate 102 is bent in advance for the structure of the power module, so that it is just exposed on the surface of the encapsulation layer 300 to form the connection pins. In a specific implementation, the additionally disposed connecting member may also be used as the module substrate extension structure 110 to lead the module substrate out to the surface of the encapsulation layer 300 to form a connection pin. In essence, an electrode of the second power chip 202 (diode), an electrode of the third power chip 203 (diode), a drain of the first power chip 201 (switch tube), and a source of the fourth power chip 204 (switch tube) are electrically connected to the second module substrate 102, and the second module substrate 102 has a function of leading out the power chip electrodes.
Specifically, the above description has been made on the manner of forming the connection pins on the module substrate, and in the specific implementation, it is necessary to describe the manner of forming the connection pins on the power chip.
Specifically, when the power chips include diodes, the anodes and the cathodes of the diodes are electrically connected to the corresponding module substrates respectively; when the power chips comprise the switch tubes, the drain electrodes and the source electrodes of the switch tubes are respectively electrically connected with the corresponding module substrates.
As can be seen from the above description, the module substrate is responsible for electrically connecting the anode and the cathode of the diode and the source and the drain of the switching tube and leading the electrically connected source and the drain to the surface of the package layer to form corresponding connection pins, and additionally, an additional structural design needs to be performed for the gate of the switching tube to form corresponding connection pins.
Specifically, when the power chips include a switch tube, the gate of the switch tube is exposed out of the surface of the package layer to form the connection pin or is led out to the surface of the package layer based on a gate extension structure to form the connection pin. Specifically, in the structure diagram shown in fig. 2 of the drawings, the gate of the first power chip 201 and the gate of the fourth power chip 204 are respectively led out to the surface of the package layer 300 based on the first gate connecting member 105 and the second gate connecting member 104, and form corresponding connecting pins; for different switch tube structures, optionally, the gate of the switch tube may be directly exposed on the surface of the encapsulation layer 300 to form a connection pin in implementation.
It should be noted that, referring to fig. 8, a schematic circuit structure of a half-bridge inverter type power conversion circuit in the prior art is shown, and a circuit structure (excluding a capacitor device) shown by a dashed square in the diagram is the circuit schematic of the power module, and the circuit structure of the power module according to the embodiment of the present invention can be understood with reference to fig. 7; in specific implementation, structures of the power modules are different correspondingly according to different implementation modes, and the main inventive content of the embodiment of the present invention is related to a basic structure of the power module and a corresponding connection structure between the power chip and the module substrate.
Example two:
fig. 7 is a schematic diagram of a partially enlarged structure of a power device according to an embodiment of the present invention. The embodiment of the invention provides a power device, which comprises a device top plate 6, a device bottom plate 7 and the power module in the first embodiment. Note that, in fig. 7, hatching is shown only on the structures of the top plate connection region 603 and the bottom plate connection region 703 in order to clearly illustrate the structure of the power device.
Basically, the device top plate 6 and the device bottom plate 7 are arranged opposite to each other, a top plate connection layer 601 is arranged on one side of the device top plate 6 facing the device bottom plate 7, and a bottom plate connection layer 701 is arranged on one side of the device bottom plate 7 facing the device top plate 6.
Specifically, in the embodiment of the present invention, the device top plate 6 has a three-layer structure, the device top plate 6 includes a top plate connection layer 601, a top plate support layer 600, and a top plate heat dissipation layer 602, which are sequentially disposed, and the top plate heat dissipation layer 602 is mainly used for assisting heat dissipation of the top plate connection layer 601 and the top plate support layer 600; the device bottom plate 7 includes a bottom plate connection layer 701, a bottom plate support layer 700, and a bottom plate heat dissipation layer 702, which are sequentially disposed, and the bottom plate heat dissipation layer 702 is mainly used for heat dissipation of the auxiliary bottom plate connection layer 701 and the bottom plate support layer 700.
Specifically, the top plate connection layer 601 is divided into a plurality of top plate connection areas 603, and the bottom plate connection layer 701 is divided into a plurality of bottom plate connection areas 703. Specifically, the top plate connection areas 603 and the bottom plate connection areas 703 correspond to the connection pins on the power module, respectively.
In a specific implementation, the connection pin of any power module of the plurality of power modules is electrically connected to the corresponding top board connection region 603 or bottom board connection region 703.
Fig. 8 is a schematic circuit diagram of a half-bridge inverter type power conversion circuit in the prior art; fig. 9 is a schematic circuit diagram of a full-bridge inverter power conversion circuit in the prior art. In the existing power conversion circuits, a half-bridge inverter power conversion circuit and a full-bridge inverter power conversion circuit are commonly used. Specifically, the circuit structure of the power converter circuit designed to the power device is illustrated by a dashed box in fig. 8 and fig. 9 of the drawings. With reference to the accompanying drawings, it is illustrated that a power device structure of a half-bridge inverter power conversion circuit may adopt the power module described in one embodiment to realize a corresponding structure, while a full-bridge inverter power conversion circuit needs the power modules described in two embodiments to realize a corresponding structure, so that, in specific use, on one hand, the power module needs to be integrated into a power device to be conveniently used from the outside; on the other hand, the number of the power modules in the power device needs to be determined according to actual requirements, and the installation structure of the power modules integrated into the power device is as simple as possible and convenient to process as possible, so that the manufacturing of the power device is accelerated, and the manufacturing cost of the power device is reduced.
Fig. 10 is a schematic view of a connection structure of a power device according to an embodiment of the present invention. Optionally, the power device further includes a device connection pad 8; with the direction shown in fig. 9 of the drawings as the second fixing direction, the two ends of the device connecting pad 8 in the second fixing direction are respectively a first device connecting terminal 811 and a second device connecting terminal 812, and the middle of the device connecting pad 8 in the second fixing direction is raised relative to the first device connecting terminal and the second device connecting terminal to form a device elastic contact 813. It should be noted that the device connector pads 8 and the module connector pads are substantially the same structural components and are referred to by different prefix designations in this specification. The structure of the device connection pads can be understood with reference to the description of the module connection pads, and the description of the embodiments of the present invention will not be repeated.
Similarly, at least a portion of the connection pins of any of the plurality of power modules is electrically connected to the corresponding top board connection region 603 or bottom board connection region 703 based on the device connection pad 8.
Specifically, with reference to the structure shown in fig. 7, the first device connecting terminal 811 and the second device connecting terminal 812 of the device connecting pad 8 are disposed on the corresponding connecting pins, and the device elastic contact 813 of the device connecting pad 8 is in contact with the corresponding top board connecting area 603 or bottom board connecting area 703 to form an electrical connection; or the first device connection terminal 811 and the second device connection terminal 812 of the device bond pad 8 are provided on the top plate connection area 603 or the bottom plate connection area 703, the device spring contact 813 of the device bond pad 8 is in contact with the corresponding connection pin.
Specifically, a specific power device configuration will be described below with reference to a power device required for a half-bridge inverter power conversion circuit and a power device required for a full-bridge inverter power conversion circuit.
Example three:
the power device of the half-bridge inverter power conversion circuit:
fig. 11 is a schematic three-dimensional structure diagram of a power device according to an embodiment of the present invention, fig. 12 is a schematic bottom plate structure diagram of the power device according to the embodiment of the present invention, and fig. 13 is a schematic top plate structure diagram of the power device according to the embodiment of the present invention.
In combination with the circuit structure of the half-bridge inverter type power conversion circuit shown in fig. 8, specifically, the number of power modules required by the power device in the half-bridge inverter type power conversion circuit is one (the first power device 901). Specifically, the first power device 901 is disposed between the device top board 6 and the device bottom board 7 according to the second embodiment, and the connection pins of the first power device 901 are electrically connected to the corresponding top board connection area 603 or bottom board connection area 703, respectively.
Specifically, according to the circuit structure, when the power module is used, the basic connection electrode needs to include the dc input positive electrode P1A DC input cathode N and an output electrode O1In addition, in order to control the switching tubes, control electrodes corresponding to the number of the switching tubes are also required to be arranged, the number of the control electrodes of each switching tube is two (the gate G and the source S), in the embodiment of the present invention, the number of the switching tubes is two, and accordingly, the total number of the switching tubes isThe number of control pins is four (G)1、S1、G2、S2) And the control pins are led out through the corresponding device connecting pieces.
Example four:
fig. 14 is a schematic three-dimensional structure diagram of a power device according to an embodiment of the present invention, fig. 15 is a schematic bottom plate structure diagram of a power device according to an embodiment of the present invention, and fig. 16 is a schematic top plate structure diagram of a power device according to an embodiment of the present invention.
In connection with the circuit structure of the half-bridge inverter type power conversion circuit shown in fig. 8, specifically, the number of power modules required by the power devices in the full-bridge inverter type power conversion circuit is two (the second power device 902 and the third power device 903). Specifically, the second power device 902 and the third power device 903 are respectively disposed between the top board 6 and the bottom board 7 of the device according to the embodiment described in the second embodiment, and the connection pins of the second power device 902 and the third power device 903 are respectively electrically connected to the corresponding top board connection area 603 or bottom board connection area 703.
Specifically, according to the circuit configuration, when the power module is used, the basic connection electrode needs to include the dc input positive electrode P, the dc input negative electrode N, and the first output electrode O01And a second output electrode O02In addition, in order to control the switching tubes, control electrodes corresponding to the number of the switching tubes are also required to be arranged, the number of the control electrodes of each switching tube is two (a gate G and a source S), in the embodiment of the invention, the number of the switching tubes is four, and correspondingly, the total number of the control pins is eight (G)01、S01、G02、S02、G03、S03、G04、S05) And the control pins are led out through the corresponding device connecting pieces.
Further, according to the circuit structures shown in fig. 8 and 9 of the drawings, the circuit structures are not completely realized in one power module, and therefore, it is necessary to realize corresponding electrical connection relationships on the device top board and the device bottom board.
Specifically, the circuit relationships implemented on the top and bottom device plates include inter-plate connections and cross-plate connections.
The inter-board connection refers to a connection relationship between two connection areas on the same connection layer (top board connection layer or bottom board connection base layer), and in specific implementation, the two connection areas to be connected are directly connected through a circuit.
The cross-board connection means that two connection areas to be connected are respectively located on two connection layers of two device substrates, and in this embodiment, a metal connection block needs to be directly placed in the two connection areas to be connected, so as to realize electrical connection of the two connection areas respectively arranged on the two connection layers of the two substrate. Specifically, the metal connection block may be a device connection member according to an embodiment of the present invention.
Example five:
in specific implementation, all connecting pins of the power module can be respectively electrically connected with corresponding connecting areas based on the device connecting sheets, firstly, corresponding device connecting pieces are connected into the corresponding connecting areas in a bonding mode, then, the relative positions of the device top plate and the device bottom plate are fixed, and then, the required power module is pushed into the corresponding position; or the required power module is firstly placed on the corresponding position of the device bottom plate, then the device bottom plate is pressed on the power device, and then the relative position of the device top plate and the device bottom plate is fixed.
Fig. 17 is a partially enlarged schematic view of a power device structure according to an embodiment of the present invention. Specifically, the relative positions of the device top plate and the device bottom plate can be locked based on a plurality of sets of bolts, and corresponding top blocks are arranged at the arrangement positions of the power modules. When the power module is sent into the gap between the module top plate and the module bottom plate from the preset power module propelling direction, after the power module moves in place, the power module can correspondingly prop against the top block, and the connecting pins of the power module can form electric connection with the corresponding connecting areas based on the device connecting piece.
It should be noted that, since the device connection contacts of the device connector are deformed in actual implementation, the structure of the device connector is shown only by a thick solid line in fig. 17.
In summary, the embodiment of the invention provides a power module and a power device, the power module provides a new multi-layer board module packaging structure, the manufacturing cost is low, the processing yield is high, and the use is convenient; the power device can adopt different numbers of power modules according to requirements, and the power device is simple in assembly process and convenient to actually process and use.
The power module and the power device provided by the embodiment of the present invention are described in detail above, and the principle and the embodiment of the present invention are explained in the present document by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (12)
1. A power module is characterized by comprising at least two module substrates, a plurality of power chips, a plurality of module connecting sheets and a packaging layer;
the at least two module substrates are arranged in a stacked mode, and a mounting gap is formed between any two adjacent module substrates; any one of the plurality of power chips is arranged in the mounting gap; any one of the plurality of power chips has at least two electrodes;
two ends of any module connecting sheet in the plurality of module connecting sheets in a first fixing direction are respectively a first module connecting end and a second module connecting end, and the middle part of the module connecting sheet in the first fixing direction protrudes relative to the first module connecting end and the second module connecting end to form a module elastic contact;
at least one electrode on any one of the plurality of power chips is electrically connected with the module substrate based on the corresponding module connecting sheet;
the packaging layer is used for packaging the at least two module substrates, the plurality of power chips and the module connecting sheet, and connecting pins corresponding to the at least two module substrates and the plurality of power chips are arranged on the surface of the packaging layer.
2. The power module of claim 1, wherein the first and second module connection terminals of at least one of the plurality of module connection pads are bonded to the corresponding electrodes and the module spring contacts contact the corresponding module substrate to form the electrical connection.
3. The power module of claim 1, wherein the first and second module connection terminals of at least one of the plurality of module connection pads are bonded to the corresponding module substrate and the module spring contacts are in electrical contact with the corresponding electrodes.
4. The power module of claim 1, wherein at least some of the number of power chips are diodes;
the electrodes of the diode comprise an anode and a cathode, and the anode and the cathode are respectively arranged on two opposite surfaces of the diode;
and the anode and/or the cathode of the diode are electrically connected with the corresponding module substrate based on the module connecting sheet.
5. The power module of claim 1, wherein at least some of the plurality of power chips are switching tubes;
the electrode of the switching tube comprises a grid electrode, a source electrode and a drain electrode, wherein the grid electrode and the source electrode are arranged on one surface of the switching tube, and the drain electrode is arranged on the other opposite surface of the switching tube.
6. The power module according to any one of claims 1 to 5, wherein a portion of the surface of any one of the at least two module substrates is exposed to the surface of the package layer to form the connection pins or is led out to the surface of the package layer based on a module substrate extension structure to form the connection pins.
7. The power module of claim 6, wherein when the plurality of power chips include diodes, the anodes and cathodes of the diodes are electrically connected to the corresponding module substrates, respectively;
when the power chips comprise switch tubes, drain electrodes and source electrodes of the switch tubes are respectively electrically connected with the corresponding module substrates, and grid electrodes of the switch tubes are exposed out of the surface of the packaging layer to form the connecting pins or are led out of the surface of the packaging layer based on a grid electrode extending structure to form the connecting pins.
8. A power device comprising a top device plate, a bottom device plate and a plurality of power modules according to any one of claims 1 to 7;
the device top plate and the device bottom plate are arranged oppositely, a top plate connecting layer is arranged on one side, facing the device bottom plate, of the device top plate, and a bottom plate connecting layer is arranged on one side, facing the device top plate, of the device bottom plate;
the top plate connecting layer is divided into a plurality of top plate connecting areas, and the bottom plate connecting layer is divided into a plurality of bottom plate connecting areas;
any connecting pin on the power module is electrically connected with the corresponding top plate connecting area or the corresponding bottom plate connecting area.
9. The power device of claim 8, further comprising a plurality of device bond pads;
the two ends of the device connecting sheet in the second fixing direction are respectively a first device connecting end and a second device connecting end, and the middle part of the device connecting sheet in the second fixing direction protrudes relative to the first device connecting end and the second device connecting end to form a device elastic contact;
at least part of the connecting pins on the power module are electrically connected with the corresponding top plate connecting area or the corresponding bottom plate connecting area based on the corresponding device connecting sheet.
10. The power device of claim 9, wherein the first device connection end and the second device connection end of at least one of the plurality of device bond pads are disposed on corresponding bond pins and the device spring contact is in electrical contact with a corresponding top plate bond area or bottom plate bond area.
11. The power device of claim 9, wherein the first device connection end and the second device connection end of at least one of the plurality of device bond pads are disposed on the top plate connection area or the bottom plate connection area and the device spring contact is in contact with a corresponding connection pin.
12. The power device of claim 8, further comprising a plurality of device connections, the plurality of top plate connection regions and the plurality of bottom plate connection regions leading out from a direction toward an exterior of the power device based on corresponding ones of the plurality of device connections, respectively.
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