CN111739675A - Thick film resistor paste - Google Patents
Thick film resistor paste Download PDFInfo
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- CN111739675A CN111739675A CN202010571482.1A CN202010571482A CN111739675A CN 111739675 A CN111739675 A CN 111739675A CN 202010571482 A CN202010571482 A CN 202010571482A CN 111739675 A CN111739675 A CN 111739675A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
Abstract
The invention discloses thick film resistor paste, which comprises at least two of Ag powder, Pt powder and Ag-Pt alloy powder; the Pt powder or the Ag-Pt alloy powder is at least one of honeycomb spherical, flocculent, spherical and sphere-like; in the Pt powder or Ag-Pt alloy powder, the length ratio of the long axis to the short axis of at least 90 wt% of the Pt powder or Ag-Pt alloy powder is as follows: long axis: the minor axis is 1 to 3. The conductive phase component in the thick film resistor paste adopts Pt to replace Pd, and after Pt powder replaces Pd powder, the TCR of the square resistor with the resistance below 100 omega/□ is reduced, so that the purposes of reducing cost and improving TCR performance can be achieved, and after Pt replaces Pd powder, the short-time overload performance of the thick film resistor is ensured to be kept unchanged or better.
Description
Technical Field
The invention relates to a conductive paste, in particular to a thick film resistor paste.
Background
The thick film chip resistor is widely used for thick film resistor electronic parts, thick film hybrid circuits, etc., and the chip thick film resistor is mainly obtained by printing a composition on a conductor pattern or an electrode formed on the surface of an insulating substrate and then firing the printed matter at a temperature of 850 ℃. + -. 20 ℃.
Thick film resistor pastes are prepared by dispersing a conductive component and an inorganic binder in an organic medium (vehicle). And depositing the thick film resistor paste on the insulating substrate by a screen printing method. The electrical properties of thick film resistors are determined primarily by the nature of the inorganic binder and conductive components in the deposited layers. The inorganic binder is mainly composed of glass, and has the main functions of binding conductive components together to form a conductive path, maintaining the integrity of the thick film resistor and playing an important role in bonding with a substrate. The organic medium is a dispersion medium and mainly influences the application characteristics, especially the rheological characteristics, of the slurry.
The traditional thick film resistor adopts the conductive phase of Ag, Pd and RuO in a low-resistance segment (for example, 10 omega/□, 1 omega/□, 0.1 omega/□ resistance segment or a lower resistance segment of 0.01 omega/□) with the square resistance of less than 100 omega/□2The problem is to improve the Temperature Coefficient of Resistance (TCR) performance, and the Pd content of the noble metal needs to be increased, which greatly increases the cost.
Most of the inorganic binders adopted by the traditional low-resistance section formula are lead silicate glass containing lead, and the conductive components are Ag, Pd and RuO2The resistance and TCR are controlled by the common Ag and Pd, the higher the Pd content is, the lower TCR can be obtained, but the resistance is difficult to reduce; due to the increasing demand for low resistance thick film resistors in recent years, low cost high performance resistor pastes are required.
The existing low-resistance thick-film resistor reduces TCR by increasing the content of noble metal Pd powder, the resistance value is increased generally by increasing the content of Ag, but the TCR is increased, so the content of Pd powder is increased, and the like, the required resistance value and TCR performance are achieved.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide thick film resistor paste with lower resistance and more excellent TCR performance.
In order to achieve the purpose, the invention adopts the technical scheme that: a thick film resistor paste comprising at least two of Ag powder, Pt powder and Ag-Pt alloy powder; the Pt powder or the Ag-Pt alloy powder is at least one of honeycomb spherical, flocculent, spherical and sphere-like; in the Pt powder or Ag-Pt alloy powder, the length ratio of the long axis to the short axis of at least 90 wt% of the Pt powder or Ag-Pt alloy powder is as follows: long axis: the minor axis is 1 to 3.
The TCR of the low-resistance section in conventional formulations, in particular resistors with a sheet resistance of less than 100 Ω/□, is mainly related to the content of the noble metal Pd. Because Pd has the defects, Pt is adopted to replace Pd, and because Pt and Pd are in the same main group in the periodic table of elements, the physical and chemical properties of the Pt and Pd are extremely similar to each other in terms of purity, rarity and durability, the Pt and Pd can be replaced with each other, and pure Pt has good high-temperature oxidation resistance and chemical stability. At normal temperature, Pt can exist stably in thick film resistor slurry, and can form Ag-Pt binary alloy with Ag in the slurry after being sintered at 850 ℃, and finally, the Ag-Pt binary alloy exists in a crystal phase of the Ag-Pt binary alloy in the thick film resistor. In addition, the biggest difference between Pt and Pd powder is that Pd is oxidized and decomposed at the temperature of between 300 and 400 ℃ in an oxidation and decomposition process at the temperature of between 850 ℃ and room temperature, PdO is formed by oxidation and decomposition at the temperature of about 800 ℃, but the complete decomposition temperature of PdO is higher than 850 ℃, and after sintering at the temperature of 850 ℃, part of PdO which is not decomposed can remain, and the existence of PdO has great influence on the resistance value and TCR, and the more the content of PdO which is not decomposed is, the resistance value is increased, the relative reduction of the Pd content is realized, and the TCR value is increased; the Pt powder does not have the process of oxidative decomposition, and can directly form Ag-Pt binary alloy with Ag when being sintered to a certain temperature, so that thick film resistor paste with lower resistance and excellent TCR performance can be obtained.
Therefore, the inventor finds that the TCR of the resistor with the square resistance smaller than 100 omega/□ is reduced after the Pt powder is used for replacing the Pd powder, which indicates that the TCR performance can be improved by adopting the Pt powder, thereby achieving the purposes of reducing the cost and improving the TCR performance; after the Pt powder or the Ag-Pt alloy powder with a specific shape is adopted, the temperature sensitivity (TCR is influenced by sintering temperature) and the TCR size effect (TCR is influenced by size) of the TCR are improved. And after the Pt is used for replacing the Pd powder, the short-time overload performance of the thick film resistor is kept unchanged or better.
The morphology of the Pt powder or the Ag-Pt alloy powder has great influence on the electrical property of the thick film resistor, and the honeycomb spherical, flocculent, spherical and sphere-like Pt powder or the Ag-Pt alloy powder can be uniformly mixed with other components in an organic carrier to show better rheological property. Meanwhile, the Pt powder with the morphology can be in good contact with a glass phase and Ag particles, and is beneficial to forming Ag-Pt alloy in a sintering process, and the glass has a good wetting process relative to the glass; similarly, the Ag-Pt alloy powder with the morphology has better contact with the glass phase, so that the glass has better wetting process relative to the glass. If the flaky powder is adopted, the Pt powder/Ag-Pt alloy powder is not easy to disperse in other components, so that the dispersion is not uniform, the phenomenon of screen blocking occurs in the screen printing process, and after sintering, the defects of cracks, holes and the like can be generated on the surface of the thick film resistor due to thermal stress.
When the length ratio a/b of the long axis (a) to the short axis (b) of the Pt powder or Ag-Pt powder is more than 3, the morphology of the powder is close to the acicular morphology, the morphology is not easy to disperse in the production process, and the phenomenon of uneven dispersion is easy to generate in an organic carrier with other conductive phases and glass phases, so that the electrical property and other properties of the thick film resistor are influenced; the a/b is 1-3, and the Pt powder or Ag-Pt powder can be uniformly mixed with other components in an organic carrier, so that the thick film resistor has better rheological property and excellent performance.
Preferably, in the Pt powder and the Ag-Pt alloy powder, the crystallite diameter of the (111) crystal face of Pt measured by an X-ray diffraction method is 7-50 nm.
Preferably, the Pt powder has a particle size of 10nm to 1 μm and a specific surface area of 0.3m2/g～25m2(ii)/g; the grain diameter of the Ag-Pt alloy powder is 200 nm-1 mu m, and the specific surface area of the Ag-Pt alloy powder is 0.3m2/g～15m2(ii) in terms of/g. The crystallite diameter is too high, the larger the grain size is, the smaller the specific surface area is, the smaller the volume ratio of the added Pt powder or Ag-Pt alloy powder with the same mass is, and the volume ratio of the conductive phase directly influences the electrical property of the thick film resistor; similarly, the crystallite diameter is too low, the grain diameter is smaller, the specific surface area is larger, agglomeration is easy to generate in the process production, the glass phase can not wet the powder inside the agglomeration in the sintering process, so that cracks or holes are generated on the surface of the thick film resistor under the action of thermal stress in the sintering process, and the defects directly influence the electricity of the thick film resistorPerformance; therefore, when the crystallite diameter of the (111) crystal face of Pt is 7-50 nm, the thick film resistor with excellent performance and no defects such as cracks or holes on the surface can be obtained.
Preferably, the thick film resistor paste comprises 30-80 wt% of solid phase component and 20-70 wt% of organic component; the solid phase component comprises 10-70 wt% of Ag, 0.1-60 wt% of Pt and RuO (RuO) calculated by 100 wt% of the solid phase component20-50 wt%, 5-60 wt% of glass component and 0-5 wt% of inorganic filler.
Preferably, the solid phase component comprises 30-70 wt% of Ag, 5-60 wt% of Pt and RuO based on 100 wt% of the solid phase component20-20 wt%, 5-35 wt% of glass component and 0-5 wt% of inorganic filler. The solid phase component is particularly suitable for preparing thick film resistor paste with 0.1 omega/□ resistor segment (in the application, the 0.1 omega/□ resistor segment actually represents the resistor segment in the range of 0.08-0.8 omega/□).
Preferably, the solid phase component comprises 20-60 wt% of Ag, 5-50 wt% of Pt and RuO based on 100 wt% of the solid phase component20-20 wt%, 10-40 wt% of glass component and 0-5 wt% of inorganic filler. The solid phase component is particularly suitable for preparing thick film resistor paste with 1 omega/□ resistor segment (in the application, 1 omega/□ resistor segment actually represents resistor segment in the range of 0.8-10 omega/□).
Preferably, the solid phase component comprises 10-40 wt% of Ag, 0.1-20 wt% of Pt and RuO based on 100 wt% of the solid phase component220-50 wt%, 20-60 wt% of glass component and 0-5 wt% of inorganic filler. The solid phase component is particularly suitable for preparing thick film resistor paste with 10 omega/□ resistor segment (in the application, 10 omega/□ resistor segment actually represents resistor segment in the range of 10-30 omega/□).
In the resistor with the square resistance of less than 100 omega/□, if the content of Pt in the resistor paste is more than the specified upper limit, firstly, the relative content of Ag powder with low resistivity is reduced, the square resistance hardly meets the preset requirement, secondly, the relative content of the glass phase is reduced, the glass phase is too little to wet more conductive phases, cracks or holes appear on the surface of the thick film resistor, and the electrical property of the thick film resistor is further deteriorated; when the content of Pt is less than the specified lower limit, the TCR performance, STOL performance and other electrical properties are difficult to meet the requirements, so that a proper addition range is required to meet the requirements of all the properties.
Preferably, the glass component is at least one of glass composition 1, glass composition 2, glass composition 3, and glass composition 4;
the glass composition 1 comprises the following components in percentage by weight: 10-50% of PbO and SiO235～55％、CaO 5～30％、Al2O31～20％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、CaO、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 1 is at least 95%;
the glass composition 2 comprises the following components in percentage by weight: SiO 2240～75％、BaO 0～15％、SrO 0～20％、Na2O 0～10％、K2O 0～10％、Al2O31～15％、B2O31-25% and ZnO 0-10%, the SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 2 is at least 95%;
the glass composition 3 comprises the following components in percentage by weight: 50-88% of PbO and SiO210～30％、Al2O31～10％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 3 is at least 95%;
the glass composition 4 comprises the following components in percentage by weight: 60-88% of PbO and SiO210～35％、Al2O31～10％、B2O31-10% and 0-20% of transition metal oxide, wherein the transition metal oxide comprises CuO and MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of;
the inorganic fillerThe material is Nb2O5、MnO2、CuO、TiO2And Ta2O5At least one of (1).
Preferably, the organic component comprises an organic carrier and an organic solvent, wherein the organic carrier is at least one of ethyl cellulose, methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin; the organic solvent is at least one of terpineol, butyl carbitol acetate, diethylene glycol dibutyl ether and alcohol ester.
The invention also aims to provide a resistor prepared from the thick-film resistor paste.
The invention has the beneficial effects that: the invention provides thick-film resistor paste, wherein a conductive phase component in the thick-film resistor paste adopts Pt to replace Pd, and after Pt powder or Ag-Pt alloy powder with a specific shape is adopted, the TCR of a resistor with the sheet resistance of less than 100 omega/□ is reduced, and the temperature sensitivity (TCR is influenced by sintering temperature) and the TCR size effect (influenced by size) of the TCR are improved, which shows that the TCR performance can be improved by adopting the Pt powder with the specific shape, so that the purposes of reducing cost and improving the TCR performance are achieved. And after the Pt is used for replacing the Pd powder, the short-time overload performance of the thick film resistor is kept unchanged or better.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
The types of Pt powders involved in the examples and comparative examples are shown in table 1.
TABLE 1
Note: the particle size of the Pt (111) plane and the ratio of the major axis to the minor axis of the particles in the table are shown in the scanning electron microscope test picture in which 80% or more of the particle size is within the range of the particle size of the Pt (111) plane and the ratio of the major axis to the minor axis of the particles. In general, the primary particle diameter of the platinum powder used in the resistance paste may be substantially equal to the crystallite diameter measured by X-ray diffraction, and the crystallite diameter d (nm) may be calculated according to the Scherrer formula: d (nm) ═ K · γ)/(B · cos θ), where K is the Scherrer constant, taken at 0.89; γ (nm) is the wavelength of the X-ray, B is the half height width of the diffraction peak of the (111) plane, and θ is the diffraction angle. The crystallite diameter of the Pt powder referred to in the examples was calculated from the peak value at which the relative intensity was the highest as measured by X-ray diffraction method.
The glass components referred to in the examples and comparative examples are shown in Table 2: the unit wt%.
TABLE 2
Wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2The CuO, MnO2、Nb2O5、Ta2O5、TiO2And ZrO2The weight ratio of (A) to (B) is as follows: 1:1:1:1:1:1.
In the examples and comparative examples, the organic component comprises the following components in weight percent: ethyl cellulose and terpineol, the weight ratio of ethyl cellulose to terpineol being 1: 4.
The formulation of the thick film resistor paste with a resistance of 0.1 Ω/□ is shown in Table 3.
TABLE 3
The thick film resistor paste formulation with a resistance of 1 Ω/□ is shown in Table 4.
TABLE 4
The formulation of the thick film resistor paste with 10 Ω/□ resistance is shown in Table 5.
TABLE 5
Sintering the thick film resistor paste at 850 ℃ to prepare a sheet resistor, and testing the performance of the sheet resistor:
a. printing 0603 specification, testing the standard deviation of all sheet resistor resistances on the whole plate: SD is less than 4%;
b. the TCR performance of the sheet resistance of 0.8 x 0.8 gauge was tested: generally, the resistance value is R when the temperature is kept at 125 ℃ for 10min by taking 25 ℃ as a reference125Keeping the temperature at-55 ℃ for 10min to test the resistance value to be R-55，
The measured H (C) TCR performance was as follows: 0.1 omega/□ is less than 800 ppm; 1 omega/□ is less than 500 ppm; 10 omega/□ is in the range of +/-100 ppm;
c. short time overload feature (STOL) performance: a thick film resistor of 0.8 x 0.8 size was applied with a rated current (10. omega./□ or less) of 2.5 times or a rated voltage (10. omega./□) of 5s for 30 minutes to confirm the change of the resistance value before and after the application,
(wherein, R0、R1Respectively before and after loading), the absolute value of the change of the delta R is less than 1 percent, namely the product is qualified, otherwise, the product is unqualified. Rated voltage of
Rated current of
(R is the resistance value of the corresponding chip resistor).
The results of the performance test of the thick-film resistor paste with the resistance segment of 0.1 omega/□ are shown in Table 6.
TABLE 6
The results of the performance test of the thick film resistor paste with the resistance segment of 1 omega/□ are shown in Table 7.
TABLE 7
The results of the performance test of the thick film resistor paste with the resistance segment of 10 omega/□ are shown in Table 8.
TABLE 8
Comparative example 5
The present comparative example differs from example 5 only in that the present comparative example replaces the Pt of example 5 with Pd, which has the same morphology and particle size range as the Pt powder of example 5.
Comparative example 6
The present comparative example differs from example 14 only in that the present comparative example replaces the Pt of example 14 with Pd, which has the same morphology and particle size range as the Pt powder of example 14.
Comparative example 7
The present comparative example differs from example 21 only in that the present comparative example replaces the Pt of example 21 with Pd, which has the same morphology and particle size range as the Pt powder of example 21.
The test results of comparative examples 5 to 7 are shown in Table 9.
TABLE 9
As can be seen from tables 6-9, in the low-resistance sections of the thick-film resistor, 1 omega/□ and 0.1 omega/□, or lower low-resistance sections such as 0.01 omega/□, the Pd powder is replaced by the Pt powder with the same mass percentage by controlling the morphology, specific surface area and particle size of the Pt powder or Ag-Pt alloy, so that the thick-film resistor has more excellent TCR performance; the Pd powder is replaced by the Pt powder with the same mass percentage of 10 omega/□, and the TCR temperature-sensitive characteristic is more excellent and the TCR size effect is smaller.
Example 25
The only difference from example 7 is that this example replaces the Pt of example 7 with f-type Pt.
Example 26
The only difference from example 15 is that this example replaces the Pt of example 15 with the g-type Pt.
Example 27
The only difference from example 10 is that this example replaces the Pt of example 10 with h-type Pt.
Example 28
The only difference from example 17 is that this example replaces the Pt of example 17 with i-type Pt.
Comparative example 8
The only difference from example 5 is that this comparative example replaces the Pt of example 5 with j-type Pt.
Comparative example 9
The only difference from example 14 is that this comparative example replaces the Pt of example 14 with j-type Pt.
Comparative example 10
The only difference from example 21 is that this comparative example replaces the Pt of example 21 with j-type Pt.
The test results of examples 25 to 28 and comparative examples 8 to 10 are shown in Table 10.
Watch 10
As can be seen from Table 10, when the crystallite diameter of the (111) plane of Pt is not in the range of 7 to 50nm, STOL and resistance concentration are difficult to satisfy, and when the ratio of the lengths of the major axis and the minor axis of the Pt powder or Ag-Pt alloy powder exceeds 3 (comparative example 10), CTCR and SD are difficult to satisfy.
After the thick-film resistor paste is prepared into a chip resistor through different sintering temperatures, the TCR performance of the chip resistor with the specification of 0.8 x 0.8 is tested according to the method, and the test result is shown in tables 11-15.
TABLE 11
TABLE 12
Watch 13
TABLE 14
Watch 15
As can be seen from tables 11-15, the resistor prepared by using the resistance paste of Pt powder has excellent TCR temperature sensitivity compared with the case of using Pd powder; in the resistance paste, the crystallite diameter of the (111) crystal face of Pt is within the range of 7-50 nm, the length ratio of the long axis to the short axis of Pt powder or Ag-Pt alloy powder is within the range of 3, and the resistor prepared by the resistance paste has better TCR temperature sensitivity.
After the thick-film resistor paste is sintered at 850 ℃ to prepare the chip resistors, the TCR performance of the chip resistors with different specifications is tested according to the method, and the test result is shown in tables 16-20.
TABLE 16
TABLE 17
Watch 18
Watch 19
Watch 20
As can be seen from tables 16-20, the resistor prepared by using the resistance paste of Pt powder has an excellent TCR size effect compared with the case of using Pd powder; in the resistance paste, the crystallite diameter of the (111) crystal face of Pt is within the range of 7-50 nm, the length ratio of the long axis to the short axis of Pt powder or Ag-Pt alloy powder is within the range of 3, and the resistor prepared by the resistance paste has a better TCR size effect.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A thick film resistor paste comprising at least two of Ag powder, Pt powder and Ag-Pt alloy powder; the Pt powder or the Ag-Pt alloy powder is at least one of honeycomb spherical, flocculent, spherical and sphere-like; in the Pt powder or Ag-Pt alloy powder, the length ratio of the long axis to the short axis of at least 90 wt% of the Pt powder or Ag-Pt alloy powder is as follows: long axis: the minor axis is 1 to 3.
2. The thick-film resistor paste according to claim 1, wherein the crystallite diameter of the (111) crystal face of Pt measured by an X-ray diffraction method in the Pt powder and the Ag-Pt alloy powder is 7-50 nm.
3. The thick-film resistor paste according to claim 1, wherein the Pt powder has a particle size of 10nm to 1 μm and a specific surface area of 0.3m2/g～25m2(ii)/g; the grain diameter of the Ag-Pt alloy powder is 200 nm-1 mu m, and the specific surface area of the Ag-Pt alloy powder is 0.3m2/g～15m2/g。
4. The thick-film resistor paste according to any one of claims 1 to 3, wherein the thick-film resistor paste comprises 30 to 80 wt% of a solid phase component and 20 to 70 wt% of an organic component; the solid phase component comprises 10-70 wt% of Ag, 0.1-60 wt% of Pt and RuO (RuO) calculated by 100 wt% of the solid phase component20-50 wt%, 5-60 wt% of glass component and 0-5 wt% of inorganic filler.
5. The thick-film resistor paste according to claim 4, wherein the solid phase component comprises Ag 30-70 wt%, Pt 5-60 wt%, RuO 100 wt%20-20 wt%, 5-35 wt% of glass component and 0-5 wt% of inorganic filler.
6. The thick-film resistor paste according to claim 4, wherein the solid phase component comprises 20-60 wt% Ag, 5-50 wt% Pt, and RuO based on 100 wt% of the solid phase component20 to 20 wt% of glass10-40 wt% of glass component and 0-5 wt% of inorganic filler.
7. The thick-film resistor paste according to claim 4, wherein the solid phase component comprises Ag 10-40 wt%, Pt 0.1-20 wt%, RuO 100 wt%220-50 wt%, 20-60 wt% of glass component and 0-5 wt% of inorganic filler.
8. The thick-film resistor paste of any of claims 4-7 wherein the glass component is at least one of glass composition 1, glass composition 2, glass composition 3, and glass composition 4;
the glass composition 1 comprises the following components in percentage by weight: 10-50% of PbO and SiO235～55％、CaO 5～30％、Al2O31～20％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、CaO、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 1 is at least 95%;
the glass composition 2 comprises the following components in percentage by weight: SiO 2240～75％、BaO 0～15％、SrO 0～20％、Na2O 0～10％、K2O 0～10％、Al2O31～15％、B2O31-25% and ZnO 0-10%, the SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 2 is at least 95%;
the glass composition 3 comprises the following components in percentage by weight: 50-88% of PbO and SiO210～30％、Al2O31～10％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition 3 is at least 95%;
the glass composition 4 comprises the following weight percentThe components of the amount: 60-88% of PbO and SiO210～35％、Al2O31～10％、B2O31-10% and 0-20% of transition metal oxide, wherein the transition metal oxide comprises CuO and MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of (1).
9. The thick-film resistor paste of claim 4 wherein the organic component comprises an organic vehicle and an organic solvent, the organic vehicle being at least one of ethyl cellulose, methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin; the organic solvent is at least one of terpineol, butyl carbitol acetate, diethylene glycol dibutyl ether and alcohol ester.
10. A resistor prepared from the thick-film resistor paste defined in any one of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010571482.1A CN111739675B (en) | 2020-06-19 | 2020-06-19 | Thick film resistor paste |
| PCT/CN2021/075363 WO2021244060A1 (en) | 2020-06-01 | 2021-02-05 | Thick film resistance slurry |
| KR1020227025627A KR20220114083A (en) | 2020-06-01 | 2021-02-05 | thick film resistance paste |
| JP2021566312A JP7295973B2 (en) | 2020-06-01 | 2021-02-05 | thick film resistor paste |
| TW110105026A TWI756053B (en) | 2020-06-01 | 2021-02-09 | A thick film resistor paste and resistor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113470864A (en) * | 2021-09-01 | 2021-10-01 | 西安宏星电子浆料科技股份有限公司 | Thick film resistor paste with low size effect |
| CN113539591A (en) * | 2021-09-17 | 2021-10-22 | 西安宏星电子浆料科技股份有限公司 | Chip resistor paste capable of reducing size effect |
| WO2021244060A1 (en) * | 2020-06-01 | 2021-12-09 | 潮州三环（集团）股份有限公司 | Thick film resistance slurry |
| CN114883027A (en) * | 2022-05-05 | 2022-08-09 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
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| WO2021244060A1 (en) * | 2020-06-01 | 2021-12-09 | 潮州三环（集团）股份有限公司 | Thick film resistance slurry |
| CN113470864A (en) * | 2021-09-01 | 2021-10-01 | 西安宏星电子浆料科技股份有限公司 | Thick film resistor paste with low size effect |
| CN113539591A (en) * | 2021-09-17 | 2021-10-22 | 西安宏星电子浆料科技股份有限公司 | Chip resistor paste capable of reducing size effect |
| CN114883027A (en) * | 2022-05-05 | 2022-08-09 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
| CN114883027B (en) * | 2022-05-05 | 2023-09-01 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
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