CN111732426A - 一种高密度封装用钙铝硅基陶瓷材料及其制备方法 - Google Patents

一种高密度封装用钙铝硅基陶瓷材料及其制备方法 Download PDF

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CN111732426A
CN111732426A CN202010547961.XA CN202010547961A CN111732426A CN 111732426 A CN111732426 A CN 111732426A CN 202010547961 A CN202010547961 A CN 202010547961A CN 111732426 A CN111732426 A CN 111732426A
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李波
赵翔浔
高陈熊
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University of Electronic Science and Technology of China
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Abstract

本发明属于电子陶瓷材料技术领域，具体提供一种高密度封装用钙铝硅基陶瓷材料及其制备方法，旨在解决在高密度封装下陶瓷基板和PCB发生的热失配问题。本发明中，钙铝硅基陶瓷材料的组分包括：Al2O3：4～15wt％，B2O3：2～10wt％，CaO：20～50wt％，SiO2：40～70wt％，CeO2：1～5wt％。所述钙铝硅基陶瓷材料具有稳定优异的性能，具备低介电常数和低介电损耗，有助于信号的高效传输；高抗弯强度(158～205MPa)和高杨氏模量(69～72GPa)，为芯片提供了足够稳定的支撑保护；高热膨胀系数(10.3～12.4ppm/℃)与PCB达到合适的匹配度，减少材料间的热应力，延长了芯片的寿命；并且，该基板材料制备成本较低，工艺相对简单，性能稳定，完全满足高密度封装的需求。

Description

一种高密度封装用钙铝硅基陶瓷材料及其制备方法
技术领域
本发明属于电子陶瓷材料技术领域，尤其涉及高热膨胀系数陶瓷材料，具体提供一种高密度封装用钙铝硅基陶瓷材料及其制备方法。
背景技术
目前，陶瓷封装材料主要是Al2O3，其优势在于耐湿性好、机械强度高、热导率高，制作和加工技术相对成熟。高密度封装广泛采用陶瓷球栅阵列封装结构(CBGA)，但是陶瓷封装模块通过植球技术安装在PCB上会出现热失配的问题；因此设计出一种高热膨胀系数、高抗弯强度和低介电常数的封装材料，以便适合高密度封装的迫切需要。
近年来，微晶玻璃受到广泛关注和研究，比如，镁铝硅体系以堇青石为主晶相，其热膨胀系数<3ppm/℃和抗弯强度≥130MPa；钙硼硅体系的主晶相为硅灰石，其热膨胀系数5～6ppm/℃和抗弯强度150MPa，代表性产品是美国Ferro公司的A6系列；钙铝硅体系的主晶相为硅灰石或钙长石，例如，在公开号为CN108341662A的专利文献中，提供了一种低介电常数低损耗高频陶瓷基板材料的制备方法，其组分为：Al2O3的含量为95～96％、SiO2的含量为0.6～1.5％、CaO的含量为0.6～1.5％、CoO的含量为0.5～1.5％，该材料的介电常数为6～7、介电损耗≤0.0003；但是该专利文献中并未注明热膨胀系数和抗弯强度，它们是衡量基板材料的热学和力学性能的两个重要指标；另外，该材料熔制温度达到1400～1600℃，制备过程中耗能巨大，生产成本高。
基于此，本发明提供一种高密度封装用钙铝硅基陶瓷材料，具有高的热膨胀系数，优异的力学性能和优良的电学性能，用以满足集成电路中陶瓷球栅阵列二级封装的要求。
发明内容
本发明旨在解决在高密度封装下陶瓷基板和PCB发生的热失配问题，提供一种高密度封装用钙铝硅基陶瓷材料；该材料具有高热膨胀系数、与PCB相匹配，同时具备高抗弯强度，低介电常数和低介电损耗，且性能稳定，足以满足大规模集成电路中高密度封装要求。
为实现上述目的，本发明采用的技术方案为：
一种高密度封装用钙铝硅基陶瓷材料，其特征在于，以质量百分比计，所述陶瓷材料的组分包括：Al2O3：4～15wt％，B2O3：2～10wt％，CaO：20～50wt％，SiO2：40～70wt％，CeO2：1～5wt％。
进一步的，所述高密度封装用钙铝硅基陶瓷材料的主晶相为硅灰石、方石英和石英。
上述高密度封装用钙铝硅基陶瓷材料的制备方法，包括以下步骤：
步骤1：依据配方计算Al2O3、B2O3、CaO、SiO2、CeO2对应原材料的质量，准确称量并混合；
步骤2：将步骤1所得混合料经球磨、烘干、过筛后，得到均匀分散的干燥粉体；
步骤3：将步骤2所得干燥粉体装入坩埚，在电炉中于600～770℃温度下预烧1～3小时；
步骤4：将步骤3所得预烧料再次球磨、烘干、过筛后，得到均匀分散的粉料；
步骤5：将步骤4所得粉料用丙烯酸进行造粒，干压成型得到坯体；
步骤6：将步骤5压制成型所得坯体置于电炉，排胶后于880～980℃下烧结1～3小时，得到高密度封装用钙铝硅基陶瓷材料。
本发明的有益效果在于：
本发明提供一种高密度封装用钙铝硅基陶瓷材料，具有稳定优异的性能，具备低介电常数和低介电损耗，有助于信号的高效传输；掺入适量的稀土氧化物CeO2能有效降低析晶活化能并增加结晶度，从而提高材料的抗弯强度(至158～205MPa)和杨氏模量(至69～72GPa)，为芯片提供了足够稳定的支撑保护；由于方石英相具有高热膨胀系数(～50ppm/℃)，其含量增加可提高热膨胀系数(10.3～12.4ppm/℃)，达到与PCB板的热匹配度，减少材料间的热应力，延长了芯片的寿命。同时，该基板材料制备成本较低，工艺相对简单，性能稳定，完全满足高密度封装的需求。
附图说明
图1为实施例4所制备的高密度封装用钙铝硅基陶瓷材料的XRD图。
图2为实施例4所制备的高密度封装用钙铝硅基陶瓷材料的SEM图。
具体实施方式
以下结合具体实施例对本发明进行进一步的描述。
本发明提供4个实施例；如表1所示为实施例1～4高密度封装用钙铝硅基陶瓷材料各组分实际配比和制备工艺，如表2所示为实施例1～4的各项性能测试结果；
实施例中，高密度封装用钙铝硅基陶瓷材料具体制备过程如下：
步骤1：依据配方计算Al2O3、B2O3、CaO、SiO2、CeO2对应原材料的质量，准确称量并混合；
步骤2：将步骤1所得混合料经球磨、烘干、过筛后，得到均匀分散的干燥粉体；
步骤3：将步骤2所得干燥粉体装入坩埚，在电炉中于600～770℃温度下预烧1～3小时；
步骤4：将步骤3预烧料再次球磨、烘干、过筛后，得到均匀分散的粉料；
步骤5：将步骤4所得粉料用丙烯酸进行造粒，干压成型得到坯体；
步骤6：将步骤5压制成型所得坯体置于电炉，排胶后于880～980℃下烧结1～3小时，得到高密度封装用钙铝硅基陶瓷材料，测试结果如表2所示。
表1
Figure BDA0002541425760000031
表2
Figure BDA0002541425760000032
其中，实施例2制备得高密度封装用钙铝硅基陶瓷材料的XRD如图1所示，SEM图如图2所示；由图1可见，高密度封装用钙铝硅基陶瓷材料中主要包含三种晶相：硅灰石、方石英和石英相，方石英相含量增加提高了材料的热膨胀系数；从图2中看出，许多白色的硅灰石晶粒包含于无定形的玻璃相中，适量CeO2掺入降低了析晶活化能，增加了硅灰石结晶，硅灰石晶粒通过弯曲和钝化材料中的裂纹尖端来提高断裂功，这阻碍了裂纹穿过晶相，提高了材料的抗弯强度。
以上所述，仅为本发明的具体实施方式，本说明书中所公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换；所公开的所有特征、或所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以任何方式组合。

Claims (3)

1.一种高密度封装用钙铝硅基陶瓷材料，其特征在于，以质量百分比计，所述陶瓷材料的组分包括：Al2O3：4～15wt％，B2O3：2～10wt％，CaO：20～50wt％，SiO2：40～70wt％，Ce O2：1～5wt％。
2.按权利要求1所述高密度封装用钙铝硅基陶瓷材料，其特征在于，所述高密度封装用钙铝硅基陶瓷材料的主晶相为硅灰石、方石英和石英。
3.按权利要求1所述高密度封装用钙铝硅基陶瓷材料的制备方法，包括以下步骤：
步骤1：依据配方计算Al2O3、B2O3、CaO、SiO2、CeO2对应原材料的质量，准确称量并混合；
步骤2：将步骤1所得混合料经球磨、烘干、过筛后，得到均匀分散的干燥粉体；
步骤3：将步骤2所得干燥粉体装入坩埚，在电炉中于600～770℃温度下预烧1～3小时；
步骤4：将步骤3所得预烧料再次球磨、烘干、过筛后，得到均匀分散的粉料；
步骤5：将步骤4所得粉料用丙烯酸进行造粒，干压成型得到坯体；
步骤6：将步骤5压制成型所得坯体置于电炉，排胶后于880～980℃下烧结1～3小时，得到高密度封装用钙铝硅基陶瓷材料。
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Publication number Priority date Publication date Assignee Title
JPH06227858A (ja) * 1993-02-02 1994-08-16 Sumitomo Metal Ind Ltd セラミックス基板
CN1718641A (zh) * 2005-06-21 2006-01-11 沈阳工业大学 一种电泳涂覆用搪瓷粉料及其制备
CN110342915A (zh) * 2019-08-01 2019-10-18 电子科技大学 一种高热膨胀钙硼硅基陶瓷封装材料及其制备方法
CN110357597A (zh) * 2019-08-01 2019-10-22 电子科技大学 一种钙硼硅系高热膨胀陶瓷基板材料及其制备方法
EP3632875A1 (en) * 2013-05-20 2020-04-08 Corning Incorporated Porous ceramic article and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06227858A (ja) * 1993-02-02 1994-08-16 Sumitomo Metal Ind Ltd セラミックス基板
CN1718641A (zh) * 2005-06-21 2006-01-11 沈阳工业大学 一种电泳涂覆用搪瓷粉料及其制备
EP3632875A1 (en) * 2013-05-20 2020-04-08 Corning Incorporated Porous ceramic article and method of manufacturing the same
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