CN111710640A - Huge transfer method for micro LED chips - Google Patents
Huge transfer method for micro LED chips Download PDFInfo
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- CN111710640A CN111710640A CN202010387522.7A CN202010387522A CN111710640A CN 111710640 A CN111710640 A CN 111710640A CN 202010387522 A CN202010387522 A CN 202010387522A CN 111710640 A CN111710640 A CN 111710640A
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000009471 action Effects 0.000 claims abstract description 9
- 239000002390 adhesive tape Substances 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VQAPWLAUGBBGJI-UHFFFAOYSA-N [B].[Fe].[Rb] Chemical compound [B].[Fe].[Rb] VQAPWLAUGBBGJI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 150000002576 ketones Chemical class 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 150000002910 rare earth metals Chemical class 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004720 dielectrophoresis Methods 0.000 claims description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 2
- 239000012530 fluid Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- 230000005484 gravity Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003116 impacting effect Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001962 electrophoresis Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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Abstract
The invention discloses a huge transfer method of micro LED chips, which comprises the steps of manufacturing a plurality of micro LED chips, wherein each micro LED chip is provided with a first electrode and a second electrode, a layer of magnetic substance is coated on the first electrode, a magnet is arranged at a first mounting position on a substrate, one end of the magnet, which is far away from the substrate, and the outward end of the magnet, which is far away from the substrate, of the first electrode are of different magnetic poles, an electric field is applied to the solution, the plurality of micro LED chips are impacted and uniformly stirred by fluid in the solution, and then the huge transfer is rapidly completed at low cost while the first electrode and the second electrode are accurately distinguished under the action of magnetic force and the electric field force.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mass transfer method for a micro LED chip.
Background
The micro light emitting diode is a display technology which carries out miniaturization and matrixing on a traditional light emitting diode structure and adopts a CMOS integrated circuit process to manufacture a driving circuit so as to realize addressing control and independent driving of each pixel point. After the Mini/Micro LED chips are manufactured, a huge amount of Mini/Micro LED chips are usually transferred, specifically, a large amount (usually several tens to millions of) Mini/Micro LED chips are transferred to a driving circuit board to form an LED array. In the current bulk transfer method, after a plurality of chips are formed on a substrate, all the chips are adhered to the same blue film, and the substrate is removed; then, diffusing the blue film to increase the distance between adjacent chips on the blue film; and finally, fixing all the chips on the blue film on the driving circuit board respectively, and removing the blue film. The huge transfer technology requires very high efficiency, yield and transfer precision, so that the method is a core technical problem in the current micro LED industrialization process, and has the technical problems of not high transfer speed, not high precision, high cost and the like.
Disclosure of Invention
The invention mainly aims to provide a mass transfer method of a micro LED chip, which can effectively solve the problems in the background technology.
In order to achieve the purpose, the invention adopts the technical scheme that:
a mass transfer method of micro LED chips comprises the following steps:
manufacturing a plurality of micro LED chips, wherein each micro LED chip is provided with a first electrode and a second electrode, and a magnetic substance is added into the first electrode when the electrodes are grown;
manufacturing a substrate or an adhesive tape, wherein the substrate or the adhesive tape is provided with a plurality of first mounting positions corresponding to the first electrodes and a plurality of second mounting positions corresponding to the second electrodes;
applying an electric field or ultrasonic waves to the solution;
the micro LED chip and the substrate or the adhesive tape are arranged in the solution, the first mounting position is provided with a magnetic field, the first electrode is mounted at the first mounting position under the action of magnetic force, and the second electrode is mounted at the second mounting position under the action of electric field or ultrasonic vibration.
Optionally, a magnet is disposed at the first mounting position, an outward end of the magnet and an outward end of the first electrode are unlike magnetic poles, and the magnetic field is generated by the magnet.
Optionally, a magnet is disposed below the substrate or the adhesive tape and at a position of the first mounting position, which is located on the same vertical line, the upward end of the magnet and the outward end of the first electrode are unlike magnetic poles, and the magnetic field is generated by the magnet.
Optionally, the electric field is generated by a lower electrode plate located below the substrate or the adhesive tape and an upper electrode plate located above the substrate or the adhesive tape, the magnet is located on the lower electrode plate, and the magnet is located right below the first mounting position.
Optionally, the applying an electric field to the solution includes:
the electric field is an alternating electric field and the second electrode is mounted at the second mounting location by dielectrophoresis (di-electrophoresis).
Optionally, the method includes:
the electric field is a stable electric field, and the second electrode is mounted at the second mounting position through electrophoresis.
Optionally:
and transmitting ultrasonic waves to the substrate or the adhesive tape to enable the LED chip to vibrate.
Optionally, the method further includes:
and after the micro LED chips and the substrate or the adhesive tape are put into the same solution, introducing gas or liquid into the solution for impact, so that the micro LED chips are stirred in the solution.
Optionally, adding a magnetic substance to the first electrode during the growing of the electrode, including:
coating the first electrode with the magnetic substance at a thickness of 0.1 to 10 micrometers;
optionally, the magnetic substance at least includes one of a permanent magnetic alloy, a rubidium-iron-boron permanent magnetic material, a permanent magnetic ferrite, a rare earth permanent magnetic material, and a composite permanent magnetic material.
Optionally, the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
Compared with the prior art, the invention has the following beneficial effects: the invention has reasonable design, a layer of magnetic substance is coated on the first electrode of the micro LED chip, the magnet is arranged at the first mounting position, one end of the magnet far away from the substrate and the outward end of the first electrode are different magnetic poles, an electric field is applied to the solution, the micro LED chips are impacted and uniformly stirred by fluid in the solution, the mixed bin is realized on the premise of avoiding collision damage of the chips, then the large amount of transfer is quickly and cheaply completed while the first electrode and the second electrode are accurately distinguished under the action of magnetic force and electric field force, and the required chip spacing can be easily obtained during the transfer by only setting the good spacing when the substrate is manufactured.
Drawings
Fig. 1 is a flowchart of a method for transferring a mass of micro LED chips according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a mass transfer method for micro LED chips according to an embodiment of the present invention.
Fig. 3 is another schematic structural diagram of a mass transfer method for micro LED chips according to an embodiment of the present invention.
Fig. 4 is a top view of a substrate for a mass transfer method of micro LED chips according to an embodiment of the invention.
Fig. 5 is a schematic diagram illustrating an effect of a mass transfer method for a micro LED chip when using an ultrasonic wave according to an embodiment of the present invention.
Fig. 6 is another schematic structural diagram of a mass transfer method for micro LED chips according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of a bin mixing method for transferring a mass of micro LED chips according to an embodiment of the present invention.
In the figure: 1. an LED chip; 2. a substrate; 4. a container; 5. an adhesive tape; 6. a liquid level; 11. a first electrode; 12. a second electrode; 21. a first mounting location; 22. a second mounting location; 31. an upper electrode plate; 32. and a lower electrode plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Exemplary embodiments according to the present application will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art, in the drawings, it is possible to enlarge the thicknesses of layers and regions for clarity, and the same devices are denoted by the same reference numerals, and thus the description thereof will be omitted.
According to an embodiment of the present invention, there is provided a mass transfer method for micro LED chips 1, as shown in fig. 1 to 3:
example 1
Step 110: manufacturing a plurality of micro LED chips 1, referring to FIG. 2, wherein the micro LED chips 1 are provided with a first electrode 11 and a second electrode 12, the first electrode 11 and the second electrode 12 are P-type electrodes or N-type electrodes, a magnetic substance is added into the first electrode 11 during electrode growth, the magnetic substance is used for distinguishing the N-type electrode from the P-type electrode, and the corresponding electrodes are installed at corresponding positions through magnetic force and gravity;
specifically, the magnetic substance is made to coat the first electrode 11 with a thickness of 0.1 to 10 micrometers;
optionally, the magnetic substance includes at least one of a permanent magnet alloy, a rubidium-iron-boron permanent magnet material, a permanent magnetic ferrite, a rare earth permanent magnet material, and a composite permanent magnet material.
Step 120: manufacturing a substrate 2, wherein a plurality of first mounting positions 21 corresponding to the first electrodes 11 are arranged on the substrate 2, magnets are arranged on the first mounting positions 21, one ends, far away from the substrate 2, of the magnets and the outward ends of the first electrodes 11 are of unlike magnetic poles, a plurality of first mounting positions 22 corresponding to the second electrodes 12 are further arranged on the substrate 2, and the first mounting positions 21 and the first mounting positions 22 are used for correspondingly adsorbing the electrodes of the micro LED chips 1 according to requirements;
step 130: the same solution is put into the micro LED chip 1 and the substrate 2, the micro LED chip 1 sinks under the action of gravity, the first electrode 11 is adsorbed at the first installation position 21 under the action of magnetic force, referring to fig. 3, the upper electrode plate 31 is arranged above the substrate 2 and is positioned below the solution liquid level 6, the lower electrode plate 32 is arranged below the substrate 2 to generate an alternating electric field, the second electrode 12 shakes due to continuous change of the electric field, and the effect that the second electrode 12 corresponds to the second installation position 22 in an aligned manner is achieved, referring to fig. 4, under the condition that the first electrode 11 is positioned at the first installation position 21, the second electrode 12 can displace due to continuous vibration and then enters the first installation position 22.
Referring to fig. 7, the method further includes introducing gas or liquid into the solution after the plurality of micro LED chips 1 and the substrate 2 are placed in the same solution, wherein the gas or liquid is used for impacting the solution, so that the plurality of micro LED chips 1 are uniformly stirred in the solution to mix bin, and the micro LED chips 1 can avoid chip collision damage in the liquid.
Alternatively, the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
Example 2
Step 130: manufacturing a plurality of micro LED chips 1, referring to FIG. 2, wherein the micro LED chips 1 are provided with a first electrode 11 and a second electrode 12, the first electrode 11 and the second electrode 12 are P-type electrodes or N-type electrodes, a magnetic substance is added into the first electrode 11 during electrode growth, the magnetic substance is used for distinguishing the N-type electrode from the P-type electrode, and the corresponding electrodes are installed at corresponding positions through magnetic force and gravity;
specifically, the magnetic substance is made to coat the first electrode 11 with a thickness of 0.1 to 10 micrometers;
optionally, the magnetic substance includes at least one of a permanent magnet alloy, a rubidium-iron-boron permanent magnet material, a permanent magnetic ferrite, a rare earth permanent magnet material, and a composite permanent magnet material.
Step 120: manufacturing a substrate 2, wherein a plurality of first mounting positions 21 corresponding to the first electrodes 11 are arranged on the substrate 2, magnets are arranged on the first mounting positions 21, one ends, far away from the substrate 2, of the magnets and the outward ends of the first electrodes 11 are of unlike magnetic poles, a plurality of first mounting positions 22 corresponding to the second electrodes 12 are further arranged on the substrate 2, and the first mounting positions 21 and the first mounting positions 22 are used for correspondingly adsorbing the electrodes of the micro LED chips 1 according to requirements;
step 130: referring to fig. 3, an upper electrode plate 31 is disposed above the substrate 2, the upper electrode plate 31 is located below the solution liquid level 6, a lower electrode plate 32 is disposed below the substrate 2 to generate a constant electric field, the micro LED chip 1 and the substrate 2 are placed in the same solution, the micro LED chip 1 is lowered to the substrate 2 by gravity and electric field force, the first electrode 11 is attracted to the first mounting position 21 by magnetic force, referring to fig. 6, ultrasonic waves are emitted to the solution to make the second electrode 12 continuously vibrate, and an effect that the second electrode 12 is aligned and corresponding to the second mounting position 22 is achieved, referring to fig. 4, in a case that the first electrode 11 is already mounted to the first mounting position 21, the second electrode 12 is displaced due to continuous vibration, and thus enters the first mounting position 22.
Referring to fig. 7, the method further includes introducing gas or liquid into the solution after the plurality of micro LED chips 1 and the substrate 2 are placed in the same solution, wherein the gas or liquid is used for impacting the solution, so that the plurality of micro LED chips 1 are uniformly stirred in the solution to mix bin, and the micro LED chips 1 can avoid chip collision damage in the liquid.
Alternatively, the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
Example 3
Step 110: manufacturing a plurality of micro LED chips 1, wherein each micro LED chip 1 is provided with a first electrode 11 and a second electrode 12, the first electrode 11 and the second electrode 12 are P-type electrodes or N-type electrodes, a magnetic substance is added into the first electrode 11 during electrode growth, the magnetic substance is used for distinguishing the N-type electrodes from the P-type electrodes, and the corresponding electrodes are installed at corresponding positions through magnetic force and gravity;
specifically, the magnetic substance is made to coat the first electrode 11 with a thickness of 0.1 to 10 micrometers;
optionally, the magnetic substance includes at least one of a permanent magnet alloy, a rubidium-iron-boron permanent magnet material, a permanent magnetic ferrite, a rare earth permanent magnet material, and a composite permanent magnet material.
Step 120: manufacturing a substrate 2, wherein a plurality of first mounting positions 21 corresponding to the first electrodes 11 are arranged on the substrate 2, magnets are arranged on the first mounting positions 21, one ends, far away from the substrate 2, of the magnets and the outward ends of the first electrodes 11 are of unlike magnetic poles, a plurality of first mounting positions 22 corresponding to the second electrodes 12 are further arranged on the substrate 2, and the first mounting positions 21 and the first mounting positions 22 are used for correspondingly adsorbing the electrodes of the micro LED chips 1 according to requirements;
step 130: the same solution is put into the micro LED chip 1 and the substrate 2, the micro LED chip 1 is dropped to the substrate 2 by gravity, the first electrode 11 is attracted to the first mounting position 21 under the action of magnetic force, referring to fig. 6, ultrasonic waves are emitted to the substrate 2, so that the second electrode 12 is shaken endlessly, and an effect that the second electrode 12 is aligned and corresponds to the second mounting position 22 is achieved, referring to fig. 4, in the case that the first electrode 11 is already mounted to the first mounting position 21, the second electrode 12 is displaced due to the endlessly shaking, and then enters the first mounting position 22.
Referring to fig. 7, the method further includes introducing gas or liquid into the solution after the plurality of micro LED chips 1 and the substrate 2 are placed in the same solution, wherein the gas or liquid is used for impacting the solution, so that the plurality of micro LED chips 1 are uniformly stirred in the solution to mix bin, and the micro LED chips 1 can avoid chip collision damage in the liquid.
Alternatively, the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
Example 4
Step 130: manufacturing a plurality of micro LED chips 1, referring to FIG. 2, wherein the micro LED chips 1 are provided with a first electrode 11 and a second electrode 12, the first electrode 11 and the second electrode 12 are P-type electrodes or N-type electrodes, a magnetic substance is added into the first electrode 11 during electrode growth, the magnetic substance is used for distinguishing the N-type electrode from the P-type electrode, and the corresponding electrodes are installed at corresponding positions through magnetic force and gravity;
specifically, the magnetic substance is made to coat the first electrode 11 with a thickness of 0.1 to 10 micrometers;
optionally, the magnetic substance includes at least one of a permanent magnet alloy, a rubidium-iron-boron permanent magnet material, a permanent magnetic ferrite, a rare earth permanent magnet material, and a composite permanent magnet material.
Step 120: manufacturing an adhesive tape 5, wherein a plurality of first mounting positions 21 corresponding to the first electrodes 11 are arranged on the adhesive tape 5, a plurality of first mounting positions 22 corresponding to the second electrodes 12 are also arranged on the adhesive tape 5, and the first mounting positions 21 and the first mounting positions 22 are used for correspondingly absorbing the electrodes of the micro LED chip 1 according to requirements;
step 130: referring to fig. 6, an upper electrode plate 31 is disposed above the adhesive tape 5, the upper electrode plate 31 is located below the solution liquid level 6, a lower electrode plate 32 is disposed below the adhesive tape 5, the lower electrode plate 32 is located outside the container 4, a magnet is disposed on the lower electrode plate 32, the lower electrode plate 32 is tightly attached to the outer wall of the container 4, the adhesive tape 5 is tightly attached to the inner wall of the container 4, since the adhesive tape 5 is thin, the distance has little influence on the magnetic field, of course, the adhesive tape 5 can be replaced by the substrate 2, the lower electrode plate 32 can generate a constant electric field and a magnetic field, the micro LED chip 1 and the adhesive tape 5 are placed in the same solution, the micro LED chip 1 is lowered to the adhesive tape 5 by gravity and electric field force, the first electrode 11 is attracted to the first mounting position 21 by the magnetic force, referring to fig. 6, ultrasonic waves are emitted to the solution, so that the second electrode 12 is continuously shaken, referring to fig. 4, in the case where the first electrode 11 has been mounted to the first mounting position 21, the second electrode 12 is displaced due to the constant vibration to enter the first mounting position 22.
Referring to fig. 7, the method further includes introducing gas or liquid into the solution after the plurality of micro LED chips 1 and the adhesive tape 5 are placed in the same solution, wherein the gas or liquid is used for impacting the solution, so that the plurality of micro LED chips 1 are uniformly stirred in the solution to be mixed in bin, and the micro LED chips 1 can avoid chip collision damage in the liquid.
Alternatively, the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
The invention has been described above with reference to embodiments thereof. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to be within the scope of the invention.
Claims (10)
1. A method for transferring a mass of micro LED chips is characterized by comprising the following steps:
manufacturing a plurality of micro LED chips, wherein each micro LED chip is provided with a first electrode and a second electrode, and a magnetic substance is added into the first electrode when the electrodes are grown;
manufacturing a substrate or an adhesive tape, wherein the substrate or the adhesive tape is provided with a plurality of first mounting positions corresponding to the first electrodes and a plurality of second mounting positions corresponding to the second electrodes;
applying an electric field or ultrasonic waves to the solution;
the micro LED chip and the substrate or the adhesive tape are arranged in the solution, the first mounting position is provided with a magnetic field, the first electrode is mounted at the first mounting position under the action of magnetic force, and the second electrode is mounted at the second mounting position under the action of an electric field or ultrasonic waves.
2. The method of claim 1, wherein the first mounting location is provided with a magnet having an opposite polarity at an outward end thereof from an outward end of the first electrode, the magnetic field being generated by the magnet.
3. The method of claim 1, wherein a magnet is disposed below the substrate or tape at a position perpendicular to the first mounting position, an upward end of the magnet and an outward end of the first electrode are of opposite polarity, and the magnetic field is generated by the magnet.
4. The method of claim 3, wherein the electric field is generated by a lower electrode plate positioned below the substrate or tape and an upper electrode plate positioned above the substrate or tape, the magnet being positioned on the lower electrode plate, the magnet being positioned directly below the first mounting location.
5. The method of any one of claims 1-4, wherein said applying an electric field to the solution comprises:
the electric field is an alternating electric field and the second electrode is positioned to the second mounting location by dielectrophoresis.
6. The method of any one of claims 1-4, wherein said applying an electric field to the solution comprises:
the electric field is a constant electric field, ultrasonic waves are emitted to the solution, the LED chip is made to vibrate, and the second electrode is positioned to the second mounting position.
7. The method according to any one of claims 1-4, further comprising:
and after the micro LED chips and the substrate or the adhesive tape are put into the same solution, introducing gas or liquid into the solution for impact, so that the micro LED chips are stirred in the solution.
8. The method according to any one of claims 1 to 4, wherein the step of growing the electrode while adding the magnetic substance to the first electrode comprises:
coating the first electrode with the magnetic substance at a thickness of 0.1 to 10 micrometers.
9. The method of any one of claims 1-4, wherein the magnetic substance comprises at least one of a permanent magnetic alloy, a rubidium iron boron permanent magnetic material, a permanent magnetic ferrite, a rare earth permanent magnetic material, and a composite permanent magnetic material.
10. The method of any one of claims 1-4, wherein the solution is an alcohol solution or a ketone solution having a density of less than 3.9 grams per cubic centimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010387522.7A CN111710640A (en) | 2020-05-09 | 2020-05-09 | Huge transfer method for micro LED chips |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010387522.7A CN111710640A (en) | 2020-05-09 | 2020-05-09 | Huge transfer method for micro LED chips |
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| CN111710640A true CN111710640A (en) | 2020-09-25 |
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| CN202010387522.7A Pending CN111710640A (en) | 2020-05-09 | 2020-05-09 | Huge transfer method for micro LED chips |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117334797A (en) * | 2023-11-22 | 2024-01-02 | 北京海炬电子科技有限公司 | Flow magnetic self-assembly huge transfer device and transfer method |
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2020
- 2020-05-09 CN CN202010387522.7A patent/CN111710640A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117334797A (en) * | 2023-11-22 | 2024-01-02 | 北京海炬电子科技有限公司 | Flow magnetic self-assembly huge transfer device and transfer method |
| CN117334797B (en) * | 2023-11-22 | 2024-03-01 | 北京海炬电子科技有限公司 | Flow magnetic self-assembly huge transfer device and transfer method |
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