CN111656540B - Semiconductor device with a semiconductor device having a plurality of semiconductor chips - Google Patents
Semiconductor device with a semiconductor device having a plurality of semiconductor chips Download PDFInfo
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- CN111656540B CN111656540B CN201880087698.1A CN201880087698A CN111656540B CN 111656540 B CN111656540 B CN 111656540B CN 201880087698 A CN201880087698 A CN 201880087698A CN 111656540 B CN111656540 B CN 111656540B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 49
- 239000011347 resin Substances 0.000 claims abstract description 49
- 230000002093 peripheral effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
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- 239000000853 adhesive Substances 0.000 description 5
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Bipolar Transistors (AREA)
- Noodles (AREA)
Abstract
The semiconductor device includes a light receiving element having a hole formed in a predetermined region, a light emitting element provided in the hole of the light receiving element, and a first resin covering a peripheral portion of the light receiving element, wherein a surface of the light receiving element and a surface of the light emitting element are substantially on the same plane.
Description
Technical Field
The present invention relates to a semiconductor device.
Background
Conventionally, a light emitting and receiving element used in an optical encoder or the like has been configured such that a light emitting element is mounted on a chip provided with the light emitting and receiving element. The light-receiving element reflects light from the light-emitting element on a measurement object disposed outside the light-receiving unit, and receives the reflected light in the light-receiving element to transmit a signal. This structure is a structure in which light emitting elements are stacked on light receiving elements, and thus the thickness of the light receiving elements becomes thicker. In an optical coupler having a reflective surface inside a light receiving/emitting element, a structure is known in which a light emitting element housing hole is provided in a substantially central portion of the light receiving element, and a light emitting element is disposed in the light emitting element housing hole. In this structure, a reflective layer is provided on the peripheral side surface of the light-emitting element accommodation hole, and light from the light-emitting element is reflected by the reflective layer. According to this configuration, since the light emitting element is disposed in the light emitting element accommodating hole provided in the light receiving element, the thickness of the light receiving element can be reduced (for example, refer to patent document 1).
Prior art literature
Patent literature
Patent document 1: japanese Kokai Sho 58-148954 publication
Disclosure of Invention
Problems to be solved by the invention
In the light receiving/emitting unit described in patent document 1, since the light of the light emitting element is reflected by the emission layer provided on the peripheral side surface of the light emitting element accommodating hole, it is necessary to make the thickness of the light receiving element thicker than that of the light emitting element, in other words, to dispose the light emitting surface of the light emitting element at a position higher than the light receiving surface of the light receiving element, thereby improving the reflectance. That is, the positions of the light receiving surface of the light receiving element and the light emitting surface of the light emitting element in the height direction are different. Therefore, there is a problem that a distance from the light receiving surface of the light receiving element to the object to be measured is different from a distance from the light emitting surface of the light emitting element to the object to be measured, and high detection sensitivity cannot be obtained.
Means for solving the problems
According to a first aspect, a semiconductor device includes a light-receiving element having a hole formed in a predetermined region, a light-emitting element provided in the hole of the light-receiving element, and a first resin covering a peripheral portion of the light-receiving element, wherein a surface of the light-receiving element and a surface of the light-emitting element are substantially flush with each other.
According to a second aspect, the semiconductor device of the first aspect further includes a substrate holding the light emitting element, a lead terminal formed separately from the substrate, and a first wire connecting the lead terminal and the light receiving element, wherein the first resin preferably seals a peripheral portion of the substrate, a portion of the lead terminal, and the first wire.
According to a third aspect, in the semiconductor device according to the second aspect, the substrate preferably includes a light-emitting element housing portion in which the light-emitting element is provided, and the light-emitting element housing portion is disposed in the hole of the light-receiving element.
According to a fourth aspect, in the semiconductor device according to the third aspect, the light receiving element includes a first light receiving portion and a second light receiving portion, and a connection portion that connects the first light receiving portion and the second light receiving portion and is thinner than the first light receiving portion and the second light receiving portion, and the hole of the light receiving element is preferably formed in the connection portion.
According to a fifth aspect, in the semiconductor device according to the fourth aspect, the substrate preferably has a recess for accommodating the connection portion of the light receiving element, and the recess for accommodating the light receiving element is filled with a second resin.
According to a sixth aspect, in the semiconductor device according to the fifth aspect, it is preferable that the second resin is further filled in a gap between the substrate and the light receiving element.
According to a seventh aspect, in the semiconductor device according to the first aspect, it is preferable that the semiconductor device includes a lead terminal provided around the light receiving element, a first wire connecting the lead terminal and the light emitting element, a second wire connecting the light emitting element and the light receiving element, and a second resin sealing the light receiving element, the light emitting element, a part of the lead terminal, and the first wire.
According to an eighth aspect, the semiconductor device according to the first aspect further includes a substrate for holding the light-receiving element and the light-emitting element, a lead terminal formed by being separated from the substrate, a first wire for connecting the lead terminal and the light-receiving element, and a second wire for connecting the light-emitting element and the light-receiving element, wherein the first resin preferably seals a part of the lead terminal and the first wire.
According to a ninth aspect, in the semiconductor device according to any one of the first to eighth aspects, a difference in height between a surface of the light receiving element and a surface of the light emitting element is preferably 10 μm or less.
Effects of the invention
According to the present invention, the surface of the light receiving element and the surface of the light emitting element provided in the hole formed in the light receiving element are substantially flush with each other, so that the distance between the object and the light receiving element is flush with the distance between the object and the light emitting element, thereby obtaining high detection sensitivity.
Drawings
Fig. 1 is a diagram schematically showing the shape of a semiconductor device according to a first embodiment of the present invention.
Fig. 2 is a diagram schematically showing the shape of the semiconductor device according to the first embodiment.
Fig. 3 is a diagram schematically showing the shape of the light receiving chip according to the first embodiment.
Fig. 4 is a diagram illustrating a method for manufacturing the semiconductor device according to the first embodiment.
Fig. 5 is a diagram illustrating a method for manufacturing the semiconductor device according to the first embodiment.
Fig. 6 is a diagram schematically showing the shape of a semiconductor device according to a second embodiment of the present invention.
Fig. 7 is a diagram illustrating a method for manufacturing a semiconductor device according to the second embodiment.
Fig. 8 is a diagram illustrating a method for manufacturing the semiconductor device according to the second embodiment.
Fig. 9 is a diagram schematically showing the shape of a semiconductor device according to a third embodiment of the present invention.
Fig. 10 is a diagram illustrating a method for manufacturing a semiconductor device according to the third embodiment.
Fig. 11 is a diagram illustrating a method for manufacturing a semiconductor device according to the third embodiment.
Detailed Description
The mode for carrying out the present invention will be described below with reference to the accompanying drawings.
First embodiment-
Fig. 1 to 3 schematically show an example of an optical coupler 1 as a semiconductor device according to a first embodiment of the present invention. Fig. 1 (a) is a top perspective view, fig. 1 (B) is a top perspective view of the resin removed from fig. 1 (a), fig. 2 (a) is a cross-sectional view of A-A 'and B-B' in fig. 1 (a), fig. 2 (B) is a top plan view, and fig. 2 (c) is a back plan view. However, in FIG. 2 (a), the region of section A' -B is not shown. Fig. 3 is a perspective view of a light receiving chip described later. For convenience of explanation, a coordinate system composed of an X axis, a Y axis, and a Z axis set as shown in the drawing is used.
The optocoupler 1 is exemplified as a semiconductor device, and the following description is made, but the semiconductor device is not limited to the optocoupler 1, and may be a photoelectric sensor, a flag sensor, or the like.
The optical coupler 1 is a planar optical coupler integrally configured with a light emitting chip 30 having a light emitting element and a light receiving chip 20 having a light receiving element. In fig. 1, the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are both the upper surfaces (Z-axis direction+side). The optical coupler 1 of the present embodiment is applied to an optical encoder, and light emitted from a light emitting element is emitted substantially parallel to the vertical direction of a reflecting surface, that is, the Z-axis direction. A measurement object (not shown) is disposed outside the optical coupler 1 in the Z-axis direction, and the optical coupler 1 is configured to receive light reflected from the measurement object by a light receiving element.
The optocoupler 1 includes a substrate 10, a light emitting chip 30, a light receiving chip 20, a lead terminal 101, and a resin 51.
The light receiving chip 20 has a plurality of light receiving elements (photodiodes: PDs) therein, and has a rectangular shape in plan view. The light receiving chip 20 may be a phototransistor in which a PD and a transistor are combined, or a PDIC including a PD and an integrated circuit constituting the PD driving circuit. As shown in fig. 3, a hole 201 is formed in a predetermined area including the center on the upper surface of the light receiving chip 20. A center recess 103 (see fig. 2) of the substrate 10, which will be described later, is accommodated in the hole 201. The light receiving chip 20 includes a hole 201, and a thin connecting portion 202 is formed in a region along the X-axis direction of the drawing (see fig. 3). The light receiving chip 20 includes a first light receiving portion 203 (Y-axis direction +side in the figure) and a second light receiving portion 204 (Y-axis direction-side in the figure) sandwiching the connection portion 202. The upper surface (Z-axis direction + side surface) of the connection portion 202 is recessed from the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204. That is, the upper surface of the connection portion 202 is located at a position lower than the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204 in the Z-axis direction +side.
As shown in fig. 2, the substrate 10 has a central portion 102, which is formed of, for example, a lead frame or the like, and is provided above the connection portion 202 of the light receiving chip 20. A central recess (light emitting element housing portion) 103 is formed in the central portion 102 of the substrate 10 in correspondence with the region where the hole 201 of the light receiving chip 20 is formed. As described above, the central recess 103 is accommodated in the hole 201 of the light receiving chip 20. The lead terminals 101 are arranged along the outer periphery of the first light receiving portion 203 and the second light receiving portion 204 of the light receiving chip 20. As described later, the lead terminal 101 is formed integrally with the substrate 10 as a lead frame, and is formed separately from the substrate 10 by cutting off a lead portion that is a connection portion with the lead frame. The upper surface (Z-axis direction + side surface) of the central portion 102 is substantially flush with the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204. The first light receiving portion 203 and the second light receiving portion 204 of the light receiving chip 20 are connected to the lead terminal 101 through the bonding wire 21. The bottom surface 103a of the recess of the central recess 103 of the substrate 10 is formed to be lower than the upper surface of the central portion 102 (Z-axis direction-side in the figure) so as to form the central recess 103. The light emitting chip 30 is provided on the bottom surface 103a of the central concave portion 103.
The light emitting chip 30 has a light emitting element and is provided on a bottom surface 103a of a central recess 103 formed in the central portion 102 of the substrate 10. The light emitting chip 30 is electrically bonded to the substrate 10 by a conductive adhesive such as silver solder wire or solder. Thereby, one electrode of the light emitting chip 30, such as a cathode electrode, is connected to the substrate 10. The upper surface of the light emitting chip 30, i.e., the light emitting surface, and the upper surface of the light receiving chip 20, i.e., the light receiving surface, are located at substantially the same height, i.e., substantially the same position in the Z-axis direction. Specifically, the difference in height between the light emitting surface of the light emitting chip 30 and the light receiving surface of the light receiving chip 20 is preferably in the range of 30 μm or less, more preferably in the range of 10 μm or less. In the present specification, the difference in position in the Z-axis direction between the upper surface of the light emitting chip 30 and the upper surface of the light receiving chip 20 is in a range in which the range of 30 μm or less is substantially the same. In other words, the central concave portion 103 is formed such that the bottom surface 103a of the central concave portion 103 of the substrate 10 is positioned lower than the upper surface of the central portion 102 by the size of the light emitting chip 30 in the Z-axis direction.
The other electrode of the light emitting chip 30, such as the positive electrode, is connected to the light receiving chip 20 (the first light receiving portion 203 in the example shown in the figure) through a bonding wire 31.
As shown in fig. 2 (a), the central portion 102 of the substrate 10 has a concave portion 102a on the lower surface side, i.e., the Z-axis direction-side. The connection portion 202 of the light receiving chip 20 is accommodated in the recess 102a of the central portion 102 of the substrate 10. The connection portion 202 of the light receiving chip 20 is sealed with the resin 41 in a state of being accommodated in the recess 120a of the central portion 102 of the substrate 10. The peripheral edge portion of the light receiving chip 20, a part of the lead terminal 101 (i.e., a portion from which the back surface (Z-axis side surface) is removed) of the peripheral edge portion of the substrate 10, and the bonding wire 21 are sealed with the resin 51 in the upper portion (Z-axis direction+side) of the optical coupler 1. The resin 41 and the resin 51 are, for example, opaque resins having light shielding properties such as epoxy resins.
The method of manufacturing the optical coupler 1 described above will be described with reference to fig. 4 and 5. Fig. 4 and 5 are sectional views of A-A ' and B-B ' in fig. 1 (a) in the same manner as in fig. 2 (a), and in this case, the region of the section a ' -B is not shown.
As shown in fig. 4 (a), a plurality of lead terminals 101, a central portion 102, a substrate 10 with a central recess 103, and a light receiving chip 20 are mounted on a thin support base 60 made of metal, a back strap, or the like. The base material forming the substrate 10 is a material having a size such that a plurality of optical couplers 1 can be obtained, and only a region of one optical coupler 1 and its surroundings are shown in the drawing. The light receiving chip 20 is mounted such that the connection portion 202 is disposed in the recess 102a of the central portion 102 of the substrate 10. At this time, the height of the Z-axis direction-side surface of the concave portion 102a of the central portion 102 of the substrate 10 is set in advance so as to form a gap g between the Z-axis direction + side surface of the connecting portion with the light receiving chip 20. The substrate 10 is prepared with a thick plate-shaped base material capable of forming the central concave portion 103, and a part of the base material is removed by etching or the like to form the concave portion 102a and the central concave portion 103. In this state, the central portion 102 of the substrate 10 and the plurality of lead terminals 101 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery of the substrate 10, and the central portion 102 and each of the lead terminals 101 are connected to the lead frame by a lead portion 102b formed on the lead frame.
The light receiving chip 20 and the substrate 10 are sealed with a resin 41. At this time, the connection portion 202 of the light receiving chip 20 partially seals the entire peripheral side surface by the resin filled in the recess 102a provided in the central portion 102 of the substrate 10, including the gap with the central portion 102 of the substrate 10. After the resin 41 is cured, the support matrix 60 is peeled off and removed to obtain an intermediate product 1A (fig. 4 (b)). And, can be removed by dissolving the metal used for the supporting base 60. The intermediate product 1A is inverted in the vertical direction, and the light receiving chip 20 and the lead terminal 101 are bonded and connected by the bonding wire 21 (fig. 4 c). The peripheral portion of the light receiving chip 20, a part of the lead terminal 101 (i.e., a portion from which the back surface (Z-axis side surface) is removed) of the peripheral portion of the substrate 10, and the bonding wire 21 are sealed with the resin 51 (fig. 4 d).
The light emitting chip 30 is connected to the bottom surface 103a of the central recess 103 formed in the central portion 102 of the substrate 10 by die bonding using an adhesive such as silver wire (fig. 5 (a)). The electrode of the light emitting chip 30 and the electrode of the light receiving chip 20 are bonded and connected by bonding wires 31 (fig. 5 b). Then, the center portion 102 of the board 10 and each lead terminal 101 are cut together with the resin 51 at the position indicated by the one-dot chain line in fig. 5 (c) and fragmented. Thus, the optical coupler 1 shown in fig. 1 is obtained.
The first embodiment described above can provide the following operational effects.
(1) The optical coupler 1 includes a light receiving chip 20 having a hole 201 formed in a predetermined region, a light emitting chip 30 provided in a central recess 103 of a lead frame, and a resin 51 covering a peripheral edge portion of the light receiving chip 20, and a surface of the light receiving chip 20 and a surface of the light emitting chip 30 are substantially on the same plane. This makes it possible to make the movement distance of the light emitted from the light emitting chip 30 before being reflected on the object and the movement distance of the light reflected on the object before being incident on the light receiving chip 20 substantially equal. Thus, the detection accuracy is improved, and high sensitivity of the sensor can be realized.
Further, compared with a case where a light emitting chip is mounted on a light receiving chip and connected by a bonding wire, the size in the Z-axis direction can be reduced, and thus the optical coupler 1 can be miniaturized and thinned.
In the conventional technique disclosed in japanese unexamined patent publication No. 58-148954, the angle between the side surface and the bottom surface of the hole formed in the main surface of the transistor is defined to be a predetermined value, and light reflected by the side surface is also received by the light receiving element. However, the light receiving element is formed of silicon, and the light emitting element accommodating hole of the light receiving element is formed by anisotropic etching of silicon. Therefore, since the inclination angle of the peripheral side surface, which becomes the reflecting surface, with respect to the bottom surface is defined as a predetermined angle of 53.7 °, it is difficult to use except for a specific use and has low versatility. In contrast, in the present embodiment, since the light receiving chip 20 is not configured to receive light reflected by the side surface of the structure, the semiconductor device can be used by a specific user, and thus a highly versatile semiconductor device can be provided.
(2) The substrate 10 has a central recess 103 as a light-emitting element housing portion in which the light-emitting chip 30 is provided, and the central recess 103 is disposed in the hole 201 of the light-receiving chip 20. In this way, the light emitting chip 30 can be provided in the central recess 103 of the substrate 10, and therefore heat dissipation can be improved.
(3) The light receiving chip 20 includes a first light receiving portion 203 and a second light receiving portion 204, and a connection portion 202 connecting the first light receiving portion 203 and the second light receiving portion 204 and having a smaller thickness than the first light receiving portion 203 and the second light receiving portion 204, and a hole 201 is provided in the connection portion 202. Thus, in a state in which the surface of the light receiving chip 20 and the surface of the light emitting chip 30 are substantially on the same plane, the light emitting chip 30 can be provided on the substrate 10, and thus, the detection accuracy and the heat dissipation can be improved.
(4) The substrate 10 has a recess 102a for accommodating the connection portion 202 of the light receiving chip 20, and the resin 41 is filled in the recess 102 for accommodating the connection portion 202. The resin 41 also fills the gap g between the substrate 10 and the light receiving chip 20. This can provide a high impact resistance.
Second embodiment-
An optical coupler according to a second embodiment of the present invention will be described. In the following description, the same reference numerals are given to the same constituent elements as those of the first embodiment, and mainly different points will be described. Further, the aspects not described are the same as those of the first embodiment.
Fig. 6 is a diagram illustrating an optical coupler 1 according to a second embodiment of the present invention, where fig. 6 (a) is a cross-sectional view, fig. 6 (b) is a top plan view, and fig. 6 (c) is a back plan view. And, fig. 6 (a) is a C-C' sectional view in fig. 6 (b).
The light receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined region including the center. The light receiving chip 20 is connected to the peripheral edge of the optocoupler 1 via a plurality of lead terminals 101, such as lead frames, and connection lines 21. The light emitting chip 30 is disposed in the hole 201. Thus, the upper surface of the light emitting chip 30, i.e., the light emitting surface, and the upper surface of the light receiving chip 20, i.e., the light receiving surface, are positioned at substantially the same height, i.e., substantially the same position in the Z-axis direction. In the second embodiment as well, the difference in height between the light emitting surface of the light emitting chip 30 and the light receiving surface of the light receiving chip 20 is preferably in the range of 30 μm or less, more preferably in the range of 10 μm or less, as in the first embodiment. In the present embodiment, the height difference between the light emitting surface of the light emitting chip 30 and the light receiving surface of the light receiving chip 20 may be in the range of several μm or less.
The light emitting chip 30 is connected to the light receiving chip 20 through a bonding wire 31, and is connected to the lead terminal 101 through a bonding wire 32. Thus, one electrode, such as a cathode electrode, of the light emitting chip 30 is electrically connected to the lead terminal 101, and the other electrode, such as an anode electrode, is electrically connected to the light receiving chip 20.
In a state where the light emitting chip 30 is provided in the hole 201 of the light receiving chip 20, a part of the lead terminal 101 (i.e., a portion excluding the back surface (Z-axis-side surface)), the light emitting chip 30, and the bonding wire 32 are sealed with the resin 41 at the lower portion (Z-axis-side) of the optical coupler 1. In the upper portion (Z-axis direction + side) of the optical coupler 1, the peripheral edge portion of the light receiving chip 20, the lead terminal 101, and the bonding wire 21 are sealed with a resin 51. The resin 41 and the resin 51 are opaque resins having light shielding properties like epoxy resins.
The method of manufacturing the optical coupler 1 according to the second embodiment will be described with reference to fig. 7 and 8. Fig. 7 and 8 are C-C' sectional views in fig. 6 (b) in the same manner as in fig. 6 (a).
As shown in fig. 7 (a), a plurality of lead terminals 101, a light receiving chip 20, and a light emitting chip 30 are mounted on a support base 60. The base material forming the lead terminal 101 is sized to have a size such that a plurality of optocouplers 1 can be obtained, and only a region and the periphery thereof serving as one optocoupler 1 are shown in the drawing. The light emitting chip 30 is mounted on the support base 60 through the hole 201 formed in the light receiving chip 20. In this state, the plurality of lead terminals 101 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery, and each lead terminal 101 is connected to the lead frame via a lead portion 102b formed on the lead frame.
The light emitting chip 30 and the lead terminal 101 are bonded by the bonding wire 32 (fig. 7 b). The light receiving chip 20, a part of the lead terminal 101 (i.e., a part from which the back surface (Z-axis direction-side surface) is removed), the light emitting chip 30, and the bonding wire 32 are sealed with a resin 41, and after the resin 41 is cured, the support base 60 is peeled off and removed to obtain an intermediate product 1A (fig. 7 c). The intermediate product 1A is inverted in the vertical direction, and the light receiving chip 20 and the lead terminal 101 are bonded by the bonding wire 21 (fig. 8 (a)). The peripheral edge of the light receiving chip 20, the lead terminal 101, and the bonding wire 21 are sealed with a resin 51 (fig. 8 b). The electrode of the light emitting chip 30 and the electrode of the light receiving chip 20 are bonded and connected by a bonding wire 31 (fig. 8 b).
Then, in the position indicated by a one-dot chain line in fig. 8 (c), the lead portion 102b connecting the lead terminals 101 is cut and fragmented together with the resin 51. This can provide the optical coupler 1 shown in fig. 6.
According to the second embodiment described above, in addition to the action effect of (1) obtained by the first embodiment, the following action effect can be obtained.
(1) The light receiving chip 20, the light emitting chip 30, a part of the lead terminal 101, and the bonding wire 32 are sealed from the back surface by the resin 41. Thus, since the resin 41 and 51 covers the light receiving chip 20 and the light emitting chip 30 except the upper surface thereof, high impact resistance can be obtained. Further, since the lead terminal 101 is sealed in an L-shape by the resins 41 and 51, it can be formed into a resin breakage-resistant shape.
(2) As shown in fig. 7 and 8, since the upper surface of the light receiving chip 20 and the upper surface of the light emitting chip 30 are mounted on the supporting base 60 at the time of manufacturing, the upper surface of the light receiving chip 20 and the upper surface of the light emitting chip 30 of the optical coupler 1 can be positioned on the same plane with high accuracy.
Third embodiment-
An optical coupler according to a third embodiment of the present invention will be described. In the following description, the same reference numerals are given to the same constituent elements as those of the first embodiment, and mainly different points will be described. In particular, the aspects not described are the same as those of the first embodiment.
Fig. 9 is a view illustrating an optical coupler 1 according to a third embodiment of the present invention, fig. 9 (a) is a cross-sectional view, fig. 9 (b) is a top plan view, and fig. 9 (c) is a back plan view. Fig. 9 (a) is a sectional view D-D' in fig. 9 (b).
The light receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined region including the center. The light receiving chip 20 and the light emitting chip 30 are mounted on the substrate 10. The light emitting chip 30 is mounted on the substrate 10 through a hole 201 formed in the light receiving chip 20. Thus, the light emitting chip 30 is bonded to the substrate 10 by a conductive adhesive such as silver wire, solder, or the like, and one electrode (e.g., cathode electrode) is electrically connected to the substrate 10. The upper surface of the light emitting chip 30, i.e., the light emitting surface, and the upper surface of the light receiving chip 20, i.e., the light receiving surface, can be positioned at substantially the same height, i.e., substantially the same position in the Z-axis direction. In the third embodiment, as in the first embodiment, the difference in height between the light emitting surface of the light emitting chip 30 and the light receiving surface of the light receiving chip 20 is preferably in the range of 30 μm or less, and more preferably in the range of 10 μm or less.
The other electrode of the light emitting chip 30, such as an anode electrode, is connected to the light receiving chip 20 through a bonding wire 31.
The substrate 10 is configured by, for example, a lead frame, and includes the mounting portion 105 for mounting the light receiving chip 20 and the light emitting chip 30, and a plurality of lead terminals 101 provided at the peripheral portion as described above. The lead terminal 101 and the light receiving chip 20 are connected by a bonding wire 21.
The light receiving chip 20, the peripheral edge portion of the substrate 10 (i.e., a portion of the mounting portion 105 and a portion of the lead terminal 101 (i.e., a portion excluding the back surface (Z-axis side surface)), and the bonding wire 21 are sealed with the resin 51 at the upper portion (Z-axis direction+side) of the optical coupler 1. The resin 51 is an opaque resin having light shielding properties, such as an epoxy resin.
The method of manufacturing the optical coupler 1 according to the third embodiment will be described with reference to fig. 10 and 11. Fig. 10 and 11 are D-D' sectional views of fig. 9 (b) in the same manner as fig. 9 (a).
As shown in fig. 10 (a), a substrate 10 having a plurality of lead terminals 101 and mounting portions 105 formed thereon is mounted on a support base 60. The base material forming the substrate 10 is a size such that a plurality of optical couplers 1 can be obtained, and is shown as a region of only one optical coupler 1 and its surroundings in the figure. The light receiving chip 20 is attached to the mounting portion 105 of the substrate 10 by die bonding using an adhesive such as silver wire.
The light receiving chip 20 and the lead terminal 101 are bonded by the bonding wire 21 (fig. 10 b). The light receiving chip 20, the peripheral edge portion of the substrate 10, and the bonding wires 21 are sealed with a resin 51, and after the resin 51 is cured, the supporting base 60 is peeled off and removed (fig. 10 c). The light emitting chip 30 is connected to the mounting portion 105 of the substrate 10 by bonding using an adhesive such as a silver wire or the like through the hole 201 formed on the light receiving chip 20 (fig. 11 (a)). The electrode of the light emitting chip 30 and the electrode of the light receiving chip 20 are bonded and connected by a bonding wire 31 (fig. 11 (a)). Then, at a position indicated by a one-dot chain line in fig. 11 (b), the resin 51 is cut and fragmented. Thus, the optical coupler 1 shown in fig. 9 is obtained.
According to the third embodiment described above, the following operational effects can be obtained in addition to the operational effects (1) obtained in the first embodiment.
The substrate 10 has a mounting portion 105 for holding the light receiving chip 20 and the light emitting chip 30. Accordingly, the light emitting chip 30 can be provided on the substrate 10, and thus heat dissipation can be improved.
The present invention is not limited to the above embodiments as long as the features of the present invention are not impaired, and other embodiments considered within the scope of the technical idea of the present invention are also included in the scope of the present invention.
The disclosures of the following priority base applications are incorporated herein by reference.
Japanese patent application No. 012842 (2018, 1 month and 29 day application)
Symbol description
1-optocoupler, 10-substrate, 20-light receiving chip, 21, 31, 32-bonding wire, 30-light emitting chip, 41, 51-resin, 101-lead terminal, 102-central portion, 103-central recess, 105-mounting portion, 201-hole, 202-recess, 203-first light receiving portion, 204-second light receiving portion.
Claims (9)
1. A semiconductor device, characterized in that,
the device comprises:
a light receiving element having a hole formed in a predetermined region;
a lead frame having a light emitting element housing portion formed with a recess and housing the light emitting element housing portion in the hole of the light receiving element;
a light emitting element provided on an inner surface of a bottom of the light emitting element housing portion of the lead frame;
a lead terminal provided along an outer periphery of the light receiving element and separated from the lead frame; and
a first resin covering the peripheral edge of the light receiving element,
the light emitting element is bonded to the bottom inner surface of the light emitting element housing portion of the lead frame by a conductive bonding material,
the light receiving surface of the light receiving element and the light emitting surface of the light emitting element are substantially on the same plane.
2. The semiconductor device according to claim 1, wherein,
the light receiving element has a first light receiving portion, a second light receiving portion, and a connection portion connecting the first light receiving portion and the second light receiving portion,
the lead frame is provided so that an upper surface, which is a light receiving surface of the first light receiving portion, of the second light receiving portion is exposed and covers an upper surface of the connection portion.
3. The semiconductor device according to claim 2, wherein,
the lead frame has a recess for receiving the connection portion of the light receiving element.
4. A semiconductor device, comprising:
a light receiving element having a hole formed in a predetermined region;
a light emitting element disposed in the hole of the light receiving element; and
a first resin covering the peripheral edge of the light receiving element,
the light receiving surface of the light receiving element and the light emitting surface of the light emitting element are substantially on the same plane,
the semiconductor device is characterized in that,
the light receiving element includes a first light receiving portion, a second light receiving portion, and a connection portion that connects the first light receiving portion and the second light receiving portion and is thinner than the first light receiving portion and the second light receiving portion, and the hole of the light receiving element is formed in the connection portion.
5. The semiconductor device according to claim 4, wherein,
the light receiving element is provided with a substrate having a recess for accommodating the connection portion of the light receiving element, and the recess for accommodating the light receiving element is filled with a second resin.
6. The semiconductor device according to claim 5, wherein,
and filling the second resin into a gap between the substrate and the light receiving element.
7. A semiconductor device is provided with:
a light receiving element having a hole formed substantially in the center;
a light emitting element disposed in the hole of the light receiving element;
a lead terminal disposed on an outer periphery of the light receiving element;
a first wire connecting a first electrode provided on a light emitting surface of the light emitting element and the light receiving element;
a second wire connecting the second electrode of the light emitting element and the lead terminal; and
a resin for exposing the light receiving surface of the light receiving element and the first electrode of the light emitting element and sealing the light emitting element, the light receiving element, the lead terminal, and the second wire,
the light receiving element, the light emitting element, and the lead terminal are held by the resin,
the light receiving surface of the light receiving element and the light emitting surface of the light emitting element are substantially on the same plane.
8. A semiconductor device is provided with:
a light receiving element having a hole formed substantially in the center;
a light emitting element disposed in the hole of the light receiving element;
a lead frame having a flat mounting portion on which the light receiving element and the light emitting element are mounted, respectively, and bonding the light receiving element and the light emitting element to the mounting portion by a conductive bonding material, respectively;
a lead terminal provided along an outer periphery of the light receiving element and separated from the lead frame;
a first wire connecting an electrode provided on a light emitting surface of the light emitting element and a first electrode of the light receiving element;
a second wire connecting the second electrode of the light receiving element and the lead terminal; and
a resin for exposing and sealing the light receiving surface of the light receiving element and the light emitting surface of the light emitting element, and the peripheral edge portion of the light receiving element, the second wire, the lead terminal, and the peripheral edge portion of the lead frame,
the light receiving surface of the light receiving element attached to the flat attachment portion by the conductive bonding material is substantially flush with the light emitting surface of the light emitting element.
9. The semiconductor device according to any one of claims 1 to 8, wherein,
the difference in height between the light receiving surface of the light receiving element and the light emitting surface of the light emitting element is within 10 μm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-012842 | 2018-01-29 | ||
| JP2018012842A JP6620176B2 (en) | 2018-01-29 | 2018-01-29 | Semiconductor device |
| PCT/JP2018/047287 WO2019146339A1 (en) | 2018-01-29 | 2018-12-21 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111656540A CN111656540A (en) | 2020-09-11 |
| CN111656540B true CN111656540B (en) | 2023-06-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880087698.1A Active CN111656540B (en) | 2018-01-29 | 2018-12-21 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6620176B2 (en) |
| KR (1) | KR102459822B1 (en) |
| CN (1) | CN111656540B (en) |
| TW (1) | TWI785195B (en) |
| WO (1) | WO2019146339A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7189994B2 (en) * | 2021-04-16 | 2022-12-14 | アオイ電子株式会社 | Semiconductor device and its manufacturing method |
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- 2018-12-21 KR KR1020207018716A patent/KR102459822B1/en active IP Right Grant
- 2018-12-21 WO PCT/JP2018/047287 patent/WO2019146339A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102459822B1 (en) | 2022-10-26 |
| TW201941447A (en) | 2019-10-16 |
| JP6620176B2 (en) | 2019-12-11 |
| CN111656540A (en) | 2020-09-11 |
| KR20200090239A (en) | 2020-07-28 |
| WO2019146339A1 (en) | 2019-08-01 |
| JP2019133994A (en) | 2019-08-08 |
| TWI785195B (en) | 2022-12-01 |
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