CN111627936B - 一种阵列基板及其制备方法和远程触控液晶显示装置 - Google Patents
一种阵列基板及其制备方法和远程触控液晶显示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 78
- 239000010409 thin film Substances 0.000 claims description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 229910007541 Zn O Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种阵列基板及制备方法,阵列基板包括基底和设置在基底上的第一数据线、第二数据线、第一扫描线和第二扫描线,每两条第一数据线和每两条第一扫描线交叉限定形成多个阵列排布的子像素。本发明提供一种远程触控液晶显示装置,包括上述阵列基板。本发明提供的阵列基板及其制备方法和远程触控液晶显示装置,通过将显示像素区TFT的水平沟道结构设计成垂直沟道,减小了TFT在基板上的占用面积,有助于提高像素单元的开口率,且TFT的垂直沟道结构减小了沟道长度,增加了TFT的导电能力,因此也能降低耗电;又通过将阵列基板显示像素区的TFT与光敏像素区的TFT的制程兼容,可在实现远程感测的同时降低制作成本。
Description
技术领域
本发明涉及显示技术领域,且特别是涉及一种阵列基板及其制备方法和远程触控液晶显示装置。
背景技术
薄膜晶体管在显示领域得到广泛的应用,氧化物薄膜晶体管,低温多晶硅薄膜晶体管等新技术不断更新。近年来,氢化非晶硅薄膜晶体管(a-Si:H TFT)技术被广泛应用于LCD的开关元件。目前,a-Si:H TFT技术简单,适合用于大面积的电子器件,对显示产业的发展有很大的帮助。
此外,a-Si:H TFT的高光敏特性也为光学传感器的应用提供了发展潜力。利用a-Si:H薄膜的电光特性,可以使a-Si:H TFT实现X射线图像传感、指纹和光学触摸显示等多种增值功能。例如拥有这些新的TFT技术的有远程触控功能的超大尺寸交互式屏幕在会议室和会议室应用中受到高度重视,然而a-Si的光感件却需要占据较大的元件面积,这会减小液晶显示器的透光区域即降低开口率。
另一方面随着技术的新一步发展,液晶面板被要求进一步高精细化、提高开口率、降低电耗以及降低制作成本,因此如何既能将光敏薄膜晶体管嵌入触控液晶显示装置内且与触控液晶显示装置的TFT开关制程兼容,又能提高开口率,进一步降低能耗是亟待解决的问题。
发明内容
本发明的目的在于提供一种阵列基板及其制备方法和远程触控液晶显示装置,以解决现有触控液晶装置实现远程触控时光敏薄膜晶体管无法与触控液晶显示装置的制程相兼容,且液晶显示装置开口率低、耗电量高等问题。
本发明解决其技术问题是采用以下的技术方案来实现的。
本发明提供一种阵列基板,所述阵列基板包括基底和设置在所述基底上的第一数据线、第二数据线、第一扫描线和第二扫描线,每两条所述第一数据线和每两条所述第一扫描线交叉限定形成多个阵列排布的子像素;每个子像素包括显示像素区和光敏像素区,所述显示像素区内设有第一薄膜晶体管,所述光敏像素区内设有第二薄膜晶体管,所述第一薄膜晶体管与所述第一数据线、所述第一扫描线电连接,所述第二薄膜晶体管与所述第二数据线、所述第二扫描线电连接;
所述第一薄膜晶体管包括从下到上依次层叠设置的第一源极、第一氧化物半导体层、第一绝缘层、第二氧化物半导体层、第一漏极、第三氧化物半导体层、第二绝缘层和第一栅极;
所述第二薄膜晶体管包括从下到上依次层叠设置的第二栅极、所述第一绝缘层、沟道层、第二源/漏层和所述第二绝缘层;
第一薄膜晶体管和第二薄膜晶体管在所述基底上同步形成。
进一步地,所述第三氧化物半导体层包括第一连接部、第二连接部、第三连接部;所述第一连接部与所述第一漏极层叠设置,所述第二连接部依次与所述第二氧化物半导体层的一端、所述第一氧化物半导体层的一端以及所述第一源极的一端电性连接,所述第三连接部与所述基底层叠设置。
进一步地,所述阵列基板还包括像素电极和公共电极;所述像素电极与所述第一漏极电性连接,所述公共电极与所述像素电极相互绝缘。
进一步地,所述第一氧化物半导体层、所述第二氧化物半导体层及所述第三氧化物半导体层为In-Ga-Zn-O类半导体;所述沟道层为非晶硅类半导体。
本发明还提供一种制备阵列基板的方法,包括步骤:在所述基底的所述显示像素区形成第一薄膜晶体管,在所述基底的所述光敏像素区形成第二薄膜晶体管,所述第一薄膜晶体管和所述第二薄膜晶体管同步形成;
在所述第一薄膜晶体管上形成相互绝缘的像素电极和公共电极,所述像素电极与所述第一薄膜晶体管电性连接。
进一步地,同步形成第一薄膜晶体管和第二薄膜晶体管的步骤包括:在形成有所述基底的所述显示像素区和所述光敏像素区分别形成第一源极跟第二栅极,以及在所述第一源极上形成所述第一氧化物半导体层。
进一步地,在形成有所述第一氧化物半导体层的所述第一源极上方以及所述第二栅极上方形成所述第一绝缘层;在形成有所述第一绝缘层的所述第一氧化物半导体层上形成所述第二氧化物半导体层,且在形成有所述第一绝缘层的所述第二栅极上形成沟道层。
进一步地,在所述第一绝缘层上形成所述第二氧化物半导体层和所述沟道层后的步骤包括:在所述第二氧化物半导体层和所述沟道层上形成源漏金属层,对所述源漏金属层进行蚀刻,蚀刻后在所述显示像素区的所述第二氧化物半导体层上方形成所述第一漏极,在所述光敏像素区的所述沟道层上方形成所述第二源/漏层。
进一步地,对所述源漏金属层进行蚀刻形成所述第一漏极和所述第二源/漏层后的步骤包括:在所述第一漏极上形成第三氧化物半导体层;在形成有所述第三氧化物半导体层的所述第一漏极上以及所述第二源/漏层上同步形成第二绝缘层;在形成有所述第二绝缘层的所述第三氧化物半导体层上方形成第一栅极。
本发明还提供一种远程触控液晶显示装置,包括如上所述的阵列基板。
本发明提供的阵列基板及其制备方法,通过将显示像素区的TFT(ThinFilmTransistor)的水平沟道结构设计成垂直沟道,减小了TFT在基板上的占用面积,有助于提高像素单元的开口率,且TFT的垂直沟道结构减小了沟道长度,增加了TFT的导电能力,因此也能降低耗电。又通过将阵列基板显示像素区的薄膜晶体管与光敏像素区的薄膜晶体管的制程兼容,可在实现远程感测的同时降低制作成本。
附图说明
图1为本发明实施例中远程触控液晶显示装置的剖面示意图。
图2为本发明实施例中彩色滤光基板的平面结构示意图。
图3为本发明实施例中阵列基板的平面结构示意图。
图4a至图4n为本发明实施例中阵列基板的制备工艺流程图。
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术方式及功效,以下结合附图及实施例,对本发明的具体实施方式、结构、特征及其功效,详细说明如后。
图1为本发明实施例中远程触控液晶显示装置的剖面示意图,图2为本发明实施例中彩色滤光基板的平面结构示意图,图3为本发明实施例中阵列基板的平面结构示意图。请参考图1至图3,本发明的实施例提供一种远程触控液晶显示装置,该远程触控液晶显示装置包括阵列基板100,阵列基板100包括阵列排布的多个子像素SP(sub-pixel)、第一数据线41、第二数据线42、第一扫描线51和第二扫描线52、基底110。
本实施例中,子像素SP例如为红色R、绿色G或蓝色B子像素,多个相邻的子像素SP构成一个显示像素(pixel)。例如,一个显示像素可包括红色R、绿色G和蓝色B三个子像素SP。
每个子像素SP包括显示像素区SP1、光敏像素区SP2,显示像素区SP1内设有电连接的像素电极31和第一薄膜晶体管10以及与像素电极31绝缘的公共电极32;光敏像素区SP2内设有第二薄膜晶体管20。
第一薄膜晶体管10即显示像素区SP1的TFT包括从下到上依次层叠设置的:第一源极12、第一氧化物半导体层141、第一绝缘层101、第二氧化物半导体层142、第一漏极13、第三氧化物半导体层143、第二绝缘层103、第一栅极11。其中第三氧化物半导体层143包括第一连接部143a、第二连接部143b以及第三连接部143c;第一连接部143a与第一漏极13层叠设置,第二连接部143b依次与第二氧化物半导体层142的一端、第一氧化物半导体层141的一端以及第一源极12的一端电性连接,第三连接部143c与基底110层叠设置。本实施例中,第一氧化物半导体层141、第二氧化物半导体层142、第三氧化物半导体层143的材料为非晶铟镓锌氧化物(indium gallium zinc oxide,IGZO),采用非晶氧化物IGZO作为半导体层的材料,可以有效降低采用传统氧化硅带来的晶体管漏电流过热问题。
优选地,本实施例中,第一氧化物半导体层141铟(In)、镓(Ga)和锌(Zn)的比例(组成比)为1:1:1即In:Ga:Zn=1:3:6,第二氧化物半导体层142铟镓锌的组成比为In:Ga:Zn=1:3:6,第三氧化物半导体层143铟镓锌的组成比为In:Ga:Zn=1:1:1。
此外可以看出本实施例中第一薄膜晶体管10中第一氧化物半导体层141、第二氧化物半导体层142和第三氧化物半导体层143形成了一个垂直的沟道结构,沟道长度即为第一源极12到第一漏极13的垂直距离,该垂直距离仅由第一氧化物半导体层141、第一绝缘层101、第二氧化物半导体层142三层膜的厚度组成,因此相比现有技术中的水平沟道结构,大大减小了沟道长度,增加了显示像素区SP1的TFT(第一薄膜晶体管10)的导电能力,减少了液晶显示器的耗电量。
又因第一薄膜晶体管10的垂直沟道设计,第一薄膜晶体管10的第一源极12和第一漏极13不再是类似于现有技术中TFT源极漏极在同一层上的水平设置,而是垂直方向上层叠设置,因此第一薄膜晶体管10的垂直沟道设计,使得TFT整体宽度减小,即减小了TFT元件在像素显示区所占用的面积,提高了像素单元的开口率。
第二薄膜晶体管20包括从下到上依次层叠设置的第二栅极21、第一绝缘层101、沟道层24、第二源/漏层22、第二绝缘层103,其中沟道层24的材料为氢化非晶硅(a-Si:H),具有光敏的特性,光敏沟道层需要露出部分沟道来需要感受光线,因此第二薄膜晶体管20为水平沟道设计。
请结合图1至图3,第一数据线41和第二数据线42相邻且为平行设置,第一扫描线51和第二扫描线52相邻且为平行设置。第一薄膜晶体管10的第一源极12电连接至第一数据线41,第一栅极11连接至第一扫描线51,第一漏极15则与像素电极31电连接。
进一步地,第二薄膜晶体管20的第二栅极21连接至第二扫描线52,沟道层24设置在第二栅极21上方且分别与第二源/漏层22的源极和漏极电性连接。第二源/漏层22的源极和漏极之一连接至第二数据线42,第二源/漏层22的源极和漏极之另一通过接触孔连接至第二扫描线52,例如,第二源/漏层22的源极连接至第二数据线42,第二源/漏层22的漏极通过接触孔连接至第二扫描线52。
由此,第一薄膜晶体管10与第一数据线41、第一扫描线51电连接,第二薄膜晶体管20与第二数据线42、第二扫描线52电连接。本实施例中,第一扫描线51和第二扫描线52可连接至同样的信号端来接收相同的电信号。
请结合图1至图3,液晶触控显示装置还包括与阵列基板100相对设置的彩色滤光基板200,彩色滤光基板200包括第一色阻区201、第二色阻区202和第三色阻区203,例如:第一色阻区201为红色色阻区、第二色阻区为绿色色阻区、第三色阻区203为蓝色色阻区。每个色阻区与阵列基板100上的一子像素SP对应设置。
当LED光或者激光照射在液晶触控显示装置上时,LED光或者激光透过彩色滤光基板200照射到阵列基板100上,阵列基板100的光敏薄膜晶体管20可以将光强转化为电信号,从而可以实现非接触式的远程触控。
图4a至图4n为本发明实施例中阵列基板的制备工艺流程图,请结合图4a至图4n,本发明的实施例提供一种制备阵列基板的方法,包括:
在阵列基板100的基底110上的显示像素区SP1和光敏像素区SP2同步形成第一薄膜晶体管10和第二薄膜晶体管20。
下面对阵列基板100的制作流程进行具体说明。
请结合图4a,提供一基底110,在基底110上同步形成第一源极12和第二栅极21,其中,第一源极12位于显示像素区SP1,第二栅极21位于光敏像素区SP2。
请结合图4b,在第一源极12上方形成第一氧化物半导体层141,该氧化物半导体层为非晶铟镓锌氧化物半导体材料。
请结合图4c,在形成有第一氧化物半导体层141的第一源极12上方以及第二栅极21上方同时形成第一绝缘层101。
请结合图4d,在形成有第一绝缘层101的第一氧化物半导体层141上方形成第二氧化物半导体层142。
请结合图4e,在形成有第一绝缘层101的第二栅极21上方形成沟道层24。
也可先在形成有第一绝缘层101的第二栅极21上方形成沟道层24,再在形成有第一绝缘层101的第一氧化物半导体层141上方形成第二氧化物半导体层142。即图4d和图4e的两个成膜顺序可以对调。
请结合图4f,在第二氧化物半导体层142和沟道层24上先是形成一源漏金属层(未标示),在形成源漏金属层后对便其进行蚀刻。蚀刻后在显示像素区SP1的第二氧化物半导体层142上方形成第一漏极13,在光敏像素区SP2的沟道层24上方形成第二源/漏层22。
请结合图4g,在第一漏极13上形成第三氧化物半导体层143,在图4g中可以更清楚地看到第三氧化物半导体层143的第一连接部143a与第一漏极13层叠设置,第三氧化物半导体层143的第二连接部143b依次与第二氧化物半导体层142的一端、第一氧化物半导体层141的一端以及第一源极12的一端电性连接,第三氧化物半导体层143的第三连接部143c与基底110层叠设置。
请结合图4h,在形成有第三氧化物半导体层143的第一漏极13上方以及在第二源/漏层22上方同步形成第二绝缘层103,该第二绝缘层103覆盖该显示像素区SP1和光敏像素区SP2。
请结合图4i,在形成有第二绝缘层103的第三氧化物半导体层143上方形成第一栅极11。在形成有第一栅极11的第二绝缘层103上方形成有机平坦层104,有机平坦层104覆盖该显示像素区SP1和光敏像素区SP2。
请结合图4j至图4k,对该有机平坦层104蚀刻后形成第一接触孔106使得第二绝缘层103部分露出,再于第二绝缘层103上方形成公共电极32。该公共电极32仅形成在显示像素区SP1内。
请结合图4l,在形成有公共电极32的基底110上方形成第三绝缘层105,该第三绝缘层105在第一接触孔106处与第二绝缘层103接触。该第三绝缘层105覆盖显示像素区SP1和光敏像素区SP2。
请结合图4m到图4n,对第三绝缘层105进行蚀刻使得第一漏极13露出,再于第三绝缘层105上方形成像素电极31,该像素电极31与该第一漏极13相接触。其中,像素电极31仅形成在显示像素区SP1的上方。
本发明提供的阵列基板及其制备方法,通过将显示像素区SP1的TFT的水平沟道结构设计成垂直沟道,减小了TFT在基板上的占用面积,有助于提高像素单元的开口率,且TFT的垂直沟道结构减小了沟道长度,增加了TFT的导电能力,因此也能降低耗电。又通过将阵列基板显示像素区SP1的薄膜晶体管与光敏像素区SP2的薄膜晶体管的制程兼容,可在实现远程感测的同时降低制作成本。
在本文中,所涉及的前、后、上、下等方位词是以附图中零部件位于图中以及零部件相互之间的位置来定义的,只是为了表达技术方案的清楚及方便。应当理解,所述方位词的使用不应限制本申请请求保护的范围。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种阵列基板(100),其特征在于,所述阵列基板(100)包括基底(110)和设置在所述基底(110)上的第一数据线(41)、第二数据线(42)、第一扫描线(51)和第二扫描线(52),每相邻两条所述第一数据线(41)和每相邻两条所述第一扫描线(51)交叉限定形成多个阵列排布的子像素(SP);
每个子像素(SP)包括显示像素区(SP1)和光敏像素区(SP2),所述显示像素区(SP1)内设有第一薄膜晶体管(10),所述光敏像素区(SP2)内设有第二薄膜晶体管(20),所述第一薄膜晶体管(10)的第一栅极(11)连接至所述第一扫描线(51),所述第一薄膜晶体管(10)的第一源极(12)电连接至所述第一数据线(41),所述第一薄膜晶体管(10)的第一漏极(13)电连接至像素电极(31),所述像素电极(31)仅形成在所述显示像素区(SP1)的上方,所述第二薄膜晶体管(20)的第二栅极(21)连接至第二扫描线(52),所述第二薄膜晶体管(20)的第二源/漏层(22)的源极和漏极之一连接至所述第二数据线(42),所述第二源/漏层(22)的源极和漏极之另一通过接触孔连接至所述第二扫描线(52);
所述第一薄膜晶体管(10)包括从下到上依次层叠设置的第一源极(12)、第一氧化物半导体层(141)、第一绝缘层(101)、第二氧化物半导体层(142)、第一漏极(13)、第三氧化物半导体层(143)、第二绝缘层(103)和第一栅极(11);
所述第二薄膜晶体管(20)包括从下到上依次层叠设置的第二栅极(21)、所述第一绝缘层(101)、沟道层(24)、第二源/漏层(22)和所述第二绝缘层(103);
所述第一薄膜晶体管(10)和所述第二薄膜晶体管(20)在所述基底(100)上同步形成。
2.如权利要求1所述的阵列基板(100),其特征在于,所述第三氧化物半导体层(143)包括第一连接部(143a)、第二连接部(143b)、第三连接部(143c);所述第一连接部(143a)与所述第一漏极(13)层叠设置,所述第二连接部(143b)依次与所述第二氧化物半导体层(142)的一端、所述第一氧化物半导体层(141)的一端以及所述第一源极(12)的一端电性连接,所述第三连接部(143c)与所述基底(110)层叠设置。
3.如权利要求1所述的阵列基板(100),其特征在于,所述阵列基板(100)还包括公共电极(32),所述公共电极(32)与所述像素电极(31)相互绝缘。
4.如权利要求1所述的阵列基板(100),其特征在于,所述第一氧化物半导体层(141)、所述第二氧化物半导体层(142)及所述第三氧化物半导体层(143)均为In-Ga-Zn-O类半导体;所述沟道层(24)为非晶硅类半导体。
5.一种阵列基板(100)的制备方法,用于制作如权利要求1-4任一项所述的阵列基板(100),其特征在于,包括步骤:
在基底(110)的显示像素区(SP1)形成第一薄膜晶体管(10),在所述基底(110)的光敏像素区(SP2)形成第二薄膜晶体管(20),所述第一薄膜晶体管(10)和所述第二薄膜晶体管(20)同步形成;
在所述第一薄膜晶体管(10)上形成相互绝缘的像素电极(31)和公共电极(32),所述像素电极(31)与所述第一薄膜晶体管(10)电性连接。
6.如权利要求5所述的阵列基板(100)的制备方法,其特征在于,同步形成所述第一薄膜晶体管(10)和所述第二薄膜晶体管(20)的步骤包括:在形成有所述基底(110)的所述显示像素区(SP1)和所述光敏像素区(SP2)分别形成第一源极(12)跟第二栅极(21)后,再于所述第一源极(12)上形成第一氧化物半导体层(141)。
7.如权利要求6所述的阵列基板(100)的制备方法,其特征在于,再于所述第一源极(12)上形成所述第一氧化物半导体层(141)后的步骤包括:在形成有所述第一氧化物半导体层(141)的所述第一源极(12)上方以及所述第二栅极(21)上方形成第一绝缘层(101);在形成有所述第一绝缘层(101)的所述第一氧化物半导体层(141)上形成第二氧化物半导体层(142),且在形成有所述第一绝缘层(101)的所述第二栅极(21)上形成沟道层(24)。
8.如权利要求7所述的阵列基板(100)的制备方法,其特征在于,在所述第一绝缘层(101)上形成所述第二氧化物半导体层(142)和所述沟道层(24)后的步骤包括:在所述第二氧化物半导体层(142)和所述沟道层(24)上形成源漏金属层,对所述源漏金属层进行蚀刻,蚀刻后在所述显示像素区(SP1)的所述第二氧化物半导体层(142)上方形成第一漏极(13),在所述光敏像素区(SP2)的所述沟道层(24)上方形成第二源/漏层(22)。
9.如权利要求8所述的阵列基板(100)的制备方法,其特征在于,对所述源漏金属层进行蚀刻形成所述第一漏极(13)和所述第二源/漏层(22)后的步骤包括:在所述第一漏极(13)上形成第三氧化物半导体层(143);
在形成有所述第三氧化物半导体层(143)的所述第一漏极(13)上以及所述第二源/漏层(22)上同步形成第二绝缘层(103);在形成有所述第二绝缘层(103)的所述第三氧化物半导体层(143)上方形成第一栅极(11)。
10.一种远程触控液晶显示装置,其特征在于,包括如权利要求1至4
任一项所述的阵列基板(100)。
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